CN103973237A - Staging overvoltage protection circuit of power amplifier - Google Patents
Staging overvoltage protection circuit of power amplifier Download PDFInfo
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- CN103973237A CN103973237A CN201410183031.5A CN201410183031A CN103973237A CN 103973237 A CN103973237 A CN 103973237A CN 201410183031 A CN201410183031 A CN 201410183031A CN 103973237 A CN103973237 A CN 103973237A
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Abstract
The invention discloses a staging overvoltage protection circuit of a power amplifier. The protection circuit comprises a power supply module and a staging overvoltage protection module, wherein the power supply module comprises an error amplifier and a first field-effect transistor, the voltage output end of the error amplifier is connected with a grid of the first field-effect transistor, and a drain of the first field-effect transistor and the power end of the error amplifier are both connected with power voltage; the staging overvoltage protection module comprises a detected voltage input end, an internal circuit, a current output end and an overvoltage reference voltage input end, the detected voltage input end is connected with a source of the first field-effect transistor, the detected voltage input end and the overvoltage reference voltage input end are both connected with the internal circuit, and the internal circuit is further connected with the current input end of the error amplifier through the current output end; the source of the first field-effect transistor is further connected with a power voltage input end of a radio frequency power amplifier. The staging overvoltage protection circuit of the power amplifier is small in overvoltage pulse, high in response speed and capable of being widely applied in the technical field of electronic circuits.
Description
Technical field
The present invention relates to electronic circuit technology field, especially a kind of overvoltage crowbar stage by stage of power amplifier.
Background technology
Portable communication device, if mobile phone, personal digital assistant (PDAs), WiFi and other communication device works are in different communication bands and different capacity grade, all be unable to do without a portable power supply.In some cases, the voltage being provided by compact power can surpass the normal working voltage of this equipment and cause equipment cisco unity malfunction.Radio-frequency power amplifier, as the nucleus module of these equipment, is usually operated under large electric current high power mode, easily because overvoltage causes equipment irregular working.
For radio-frequency power amplifier, when power source voltage Vcc o surpasses the normal working voltage of radio-frequency (RF) power amplification, can cause the operating current of radio-frequency power amplifier and the increase of power output, thereby make radio frequency power tube under overvoltage and overheated poor environment, very easily cause the damage of radio frequency power tube.Therefore be necessary to design a overvoltage crowbar for radio-frequency power amplifier: when the power source voltage Vcc o of radio-frequency power amplifier is rated operational voltage, designed overvoltage crowbar does not affect the overall performance of radio-frequency power amplifier; And when the power source voltage Vcc o of radio-frequency power amplifier surpasses rated operational voltage, will trigger overvoltage crowbar work, thereby stablize the power source voltage Vcc o of radio-frequency power amplifier, prevent that radio-frequency power amplifier is because of the overvoltage undesired and damage of working.
The overvoltage crowbar of traditional radio-frequency power amplifier is mainly divided into following three kinds:
The first is overvoltage crowbar as shown in Figure 1; its main feature is that the power source voltage Vcc o of the radio-frequency power amplifier detecting and overvoltage protection reference voltage Vreg are compared; produce control electric current I out and carry out the output voltage V out of departure amplifier EA, thereby realize overvoltage clamping protection.Yet; when power control signal Vramp rising suddenly causes the power source voltage Vcc o of radio-frequency power amplifier to raise suddenly; single overvoltage control loop can not fast detecting and the abnormality of identification overvoltage; cause overvoltage protection to be difficult to realize quick response; cause the power source voltage Vcc o of radio-frequency power amplifier still to have overshoot, may surpass by the specified power relative time (PvT) of standard and measure.
The second is overvoltage crowbar as shown in Figure 2, wherein, Power_control(Tx_en) is a mixed signal, Power_control(Tx_en) connects simulated power control signal and digital enable signal simultaneously.The main feature of this protective circuit is to be converted to a voltage signal Pf after the radio-frequency power amplifier power output detecting is controlled to feedback by power, then signal Pf is connected to comparator negative input end and with the power control signal Power_control(Tx_en that is connected to comparator positive input terminal) compare, then by the output of comparator, control conducting and the shutoff of a Mos field effect transistor M 1, its essence is the operating state of controlling radio-frequency (RF) power transistor by controlling the base bias Bias of radio-frequency power amplifier, so that radio-frequency power amplifier is protected.As Power_control(Tx_en) when enabling high level, the first bipolar transistor T1 and the second bipolar transistor T2 conducting, drag down the grid voltage of a Mos field effect transistor M 1, thereby can control by controlling the base bias Bias of radio-frequency power amplifier the operating state of radio-frequency (RF) power transistor.
The third is overvoltage crowbar as shown in Figure 3, and it comprises voltage detecting circuit, voltage-current converter circuit and biasing circuit.The main feature of this circuit is by voltage detecting circuit, to detect the supply voltage Vbat of radio-frequency power amplifier: when supply voltage Vbat is rated voltage, the output voltage V out of voltage detecting circuit is not enough to open the 5th bipolar transistor T5, in the 5th bipolar transistor T5, do not have electric current to flow through, now whole overvoltage crowbar is not worked, and does not affect the normal work of radio-frequency power amplifier; When supply voltage Vbat surpasses rated voltage, the output voltage V out of voltage detecting circuit makes the 5th bipolar transistor T5 conducting, electric current flow through the 5th bipolar transistor T5 with after the 7th bipolar transistor T7, through the first bipolar transistor T1 mirror image, become required pull-down current again, this pull-down current is received the base stage of the 3rd bipolar transistor T3 in biasing circuit, therefore can come by controlling the electric current of base bias circuit quiescent current and the power output of limitation of radio frequency power amplifier.
The mode that the overvoltage crowbar of the second and the third radio-frequency power amplifier has all adopted base bias to control realizes, and the major defect of this mode is that the response speed of circuit is slower.
In sum, also do not have in the industry at present that a kind of to meet overvoltage pulse little and fast response time requirement simultaneously, the overvoltage crowbar of radio-frequency power amplifier.
Summary of the invention
In order to solve the problems of the technologies described above, the object of the invention is: provide a kind of overvoltage pulse little and fast response time requirement of simultaneously meeting, the overvoltage crowbar of radio-frequency power amplifier.
The technical solution adopted for the present invention to solve the technical problems is: a kind of overvoltage crowbar stage by stage of power amplifier, comprise power supply supplying module and overvoltage protective module stage by stage, described power supply supplying module comprises error amplifier and the first field-effect transistor, the voltage output end of described error amplifier is connected with the grid of the first field-effect transistor, and the drain electrode of described the first field-effect transistor is all connected with supply voltage with the power end of error amplifier; Described overvoltage protective module stage by stage comprises detection voltage input end, internal circuit, current output terminal and overvoltage reference voltage input, described detection voltage input end is connected with the source electrode of the first field-effect transistor, described detection voltage input end is all connected with internal circuit with overvoltage reference voltage input, and described internal circuit is also connected with the current input terminal of error amplifier by current output terminal; The source electrode of described the first field-effect transistor is also connected with the supply voltage input of radio-frequency power amplifier.
Further, described power supply supplying module also comprises power control signal input, the first resistance, the first electric capacity, the second resistance, the second electric capacity and the 3rd resistance, described power control signal input is connected by the first resistance and then with the negative input end of error amplifier, the negative input end of described error amplifier is also connected with the earth by the first electric capacity, the positive input terminal of described error amplifier is connected with the earth by the second resistance, at the positive input terminal of described error amplifier and detect and go back parallel join between voltage input end and have the second electric capacity and the 3rd resistance.
Further, described overvoltage protective module is stage by stage overvoltage protective module in three stages.
Further, described internal circuit comprises resistor voltage divider network, RC low pass filter, current source and differential pair, described resistor voltage divider network comprises the 4th resistance, the 5th resistance, the 6th resistance and the 7th resistance, described RC low pass filter comprises the 3rd electric capacity, the 8th resistance, the 4th electric capacity, the 9th resistance, the 5th electric capacity and the tenth resistance, described current source comprises the first tail current source, the second tail current source, the 3rd tail current source and the 4th tail current source, described differential pair comprises the second field-effect transistor, the 3rd field-effect transistor, the 4th field-effect transistor, the 5th field-effect transistor, the 6th field-effect transistor and the 7th field-effect transistor,
Described overvoltage reference voltage input is successively by the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance and the 4th tail current source and then be connected with the earth;
Described the 4th resistance is connected by the 8th resistance and then with the grid of the second field-effect transistor, described the 8th resistance is also connected with the earth by the 3rd electric capacity, and the source electrode of the source electrode of described the second field-effect transistor and the 3rd field-effect transistor is all connected with the earth by the first tail current;
Described the 5th resistance is connected by the 9th resistance and then with the grid of the 4th field-effect transistor, described the 9th resistance is also connected with the earth by the 4th electric capacity, and the source electrode of the source electrode of described the 4th field-effect transistor and the 5th field-effect transistor is all connected with the earth by the second tail current;
Described the 6th resistance is connected by the tenth resistance and then with the grid of the 6th field-effect transistor, described the tenth resistance is also connected with the earth by the 5th electric capacity, and the source electrode of the source electrode of described the 6th field-effect transistor and the 7th field-effect transistor is all connected with the earth by the 3rd tail current;
The drain electrode of the drain electrode of the drain electrode of described the second field-effect transistor, the 4th field-effect transistor and the 6th field-effect transistor is all connected with power supply;
The drain electrode of the drain electrode of the drain electrode of described the 3rd field-effect transistor, the 5th field-effect transistor and the 7th field-effect transistor is all connected with the current input terminal of error amplifier;
The grid of the grid of the grid of described the 3rd field-effect transistor, the 5th field-effect transistor and the 7th field-effect transistor is all connected with the source electrode of the first field-effect transistor.
Further, described overvoltage protective module is stage by stage adjustable overvoltage protective module in three stages.
Further, described internal circuit comprises RC low pass filter, current source, the resistor voltage divider network that differential pair and belt switch are controlled, described RC low pass filter comprises the 3rd electric capacity, the 8th resistance, the 4th electric capacity, the 9th resistance, the 5th electric capacity and the tenth resistance, described current source comprises the first tail current source, the second tail current source, the 3rd tail current source and the 4th tail current source, described differential pair comprises the second field-effect transistor, the 3rd field-effect transistor, the 4th field-effect transistor, the 5th field-effect transistor, the 6th field-effect transistor and the 7th field-effect transistor,
The resistor voltage divider network that described belt switch is controlled comprises the first digital controlled signal input, the 4th resistance, the 8th field-effect transistor, the second digital controlled signal input, the 5th resistance, the 9th field-effect transistor, the 3rd digital controlled signal input, the 6th resistance, the tenth field-effect transistor, the 4th digital controlled signal input the 7th resistance and the 11 field-effect transistor;
Described overvoltage reference voltage input is successively by the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance and the 4th tail current source and then be connected with the earth;
The source electrode of described the 8th field-effect transistor is connected with overvoltage reference voltage input, and the drain electrode of described the 8th field-effect transistor is connected with the 5th resistance, and the grid of described the 8th field-effect transistor is connected with the first digital controlled signal input;
The source electrode of described the 9th field-effect transistor is connected with the 4th resistance, and the drain electrode of described the 9th field-effect transistor is connected with the 6th resistance, and the grid of described the 9th field-effect transistor is connected with the second digital controlled signal input;
The source electrode of described the tenth field-effect transistor is connected with the 5th resistance, and the drain electrode of described the tenth field-effect transistor is connected with the 7th resistance, and the grid of described the 9th field-effect transistor is connected with the 3rd digital controlled signal input;
The source electrode of described the 11 field-effect transistor is connected with the 6th resistance, and the drain electrode of described the 11 field-effect transistor is connected with the 4th tail current source, and the grid of described the 11 field-effect transistor is connected with the 4th digital controlled signal input;
Described the 4th resistance is connected by the 8th resistance and then with the grid of the second field-effect transistor, described the 8th resistance is also connected with the earth by the 3rd electric capacity, and the source electrode of the source electrode of described the second field-effect transistor and the 3rd field-effect transistor is all connected with the earth by the first tail current;
Described the 5th resistance is connected by the 9th resistance and then with the grid of the 4th field-effect transistor, described the 9th resistance is also connected with the earth by the 4th electric capacity, and the source electrode of the source electrode of described the 4th field-effect transistor and the 5th field-effect transistor is all connected with the earth by the second tail current;
Described the 6th resistance is connected by the tenth resistance and then with the grid of the 6th field-effect transistor, described the tenth resistance is also connected with the earth by the 5th electric capacity, and the source electrode of the source electrode of described the 6th field-effect transistor and the 7th field-effect transistor is all connected with the earth by the 3rd tail current;
The drain electrode of the drain electrode of the drain electrode of described the second field-effect transistor, the 4th field-effect transistor and the 6th field-effect transistor is all connected with power supply;
The drain electrode of the drain electrode of the drain electrode of described the 3rd field-effect transistor, the 5th field-effect transistor and the 7th field-effect transistor is all connected with the current input terminal of error amplifier;
The grid of the grid of the grid of described the 3rd field-effect transistor, the 5th field-effect transistor and the 7th field-effect transistor is all connected with the source electrode of the first field-effect transistor.
The invention has the beneficial effects as follows: comprise power supply supplying module and overvoltage protective module stage by stage, power supply supplying module comprises error amplifier and the first field-effect transistor based on drain voltage control model, at radio-frequency power amplifier during in overvoltage condition, overvoltage protective module can respond and start overvoltage protection fast, thereby effectively reduced overvoltage pulse and shortened overvoltage recovery time, and adopted drain voltage control model, the response speed of circuit is very fast; This circuit is convenient to integratedly, applied widely simultaneously, and flexibility is higher.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described.
Fig. 1 is the circuit theory diagrams of the overvoltage crowbar of existing the first radio-frequency power amplifier;
Fig. 2 is the circuit theory diagrams of the overvoltage crowbar of existing the second radio-frequency power amplifier;
Fig. 3 is the circuit theory diagrams of the overvoltage crowbar of existing the third radio-frequency power amplifier;
Fig. 4 is the structured flowchart of the overvoltage crowbar stage by stage of a kind of power amplifier of the present invention;
Fig. 5 is the circuit structure schematic diagram of power supply module of the present invention;
Fig. 6 is the present invention's circuit theory diagrams of overvoltage protective module internal circuit in three stages;
Fig. 7 is the present invention's circuit theory diagrams of adjustable overvoltage protective module internal circuit in three stages.
Embodiment
With reference to Fig. 4, a kind of overvoltage crowbar stage by stage of power amplifier, comprise power supply supplying module and overvoltage protective module stage by stage, described power supply supplying module comprises error amplifier EA and the first field effect transistor M 1, the voltage output end Vout of described error amplifier EA is connected with the grid of the first field effect transistor M 1, and the power end of the drain electrode of described the first field effect transistor M 1 and error amplifier EA is all connected with supply voltage Vbat; Described overvoltage protective module stage by stage comprises detection voltage input end Vinc, internal circuit, current output terminal Iout and overvoltage reference voltage input Vreg, described detection voltage input end Vinc is connected with the source electrode of the first field effect transistor M 1, described detection voltage input end Vinc is all connected with internal circuit with overvoltage reference voltage input Vreg, and described internal circuit is also connected with the current input terminal of error amplifier EA by current output terminal Iout; The source electrode of described the first field effect transistor M 1 is also connected with the supply voltage input Vcco of radio-frequency power amplifier.
Wherein, overvoltage protective module is that N(N is more than or equal to 1 integer stage by stage) stage overvoltage protective module.The output voltage V cco of power supply supplying module directly offers radio-frequency power amplifier as the supply voltage of power amplifier; and overvoltage protective module detects the power source voltage Vcc o of radio-frequency power amplifier stage by stage; and compare and produce control electric current I out with overvoltage reference voltage V reg; the output voltage V out of departure amplifier EA, thus realize overvoltage clamping protection.
With reference to Fig. 5, be further used as preferred embodiment, described power supply supplying module also comprises power control signal input Vramp, the first resistance R 1, the first capacitor C 1, the second resistance R 2, the second capacitor C 2 and the 3rd resistance R 3, described power control signal input Vramp is connected by the first resistance R 1 and then with the negative input end of error amplifier EA, the negative input end of described error amplifier EA is also connected with the earth by the first capacitor C 1, the positive input terminal of described error amplifier EA is connected with the earth by the second resistance R 2, at the positive input terminal of described error amplifier EA and detect and go back parallel join between voltage input end Vinc and have the second capacitor C 2 and the 3rd resistance R 3.
Be further used as preferred embodiment, described overvoltage protective module is stage by stage overvoltage protective module in three stages.
With reference to Fig. 6, be further used as preferred embodiment, described internal circuit comprises resistor voltage divider network, RC low pass filter, current source and differential pair, described resistor voltage divider network comprises the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6 and the 7th resistance R 7, described RC low pass filter comprises the 3rd capacitor C 3, the 8th resistance R 8, the 4th capacitor C 4, the 9th resistance R 9, the 5th capacitor C 5 and the tenth resistance R 10, described current source comprises the first tail current source I1, the second tail current source I2, the 3rd tail current source I3 and the 4th tail current source I4, described differential pair comprises the second field effect transistor M 2, the 3rd field effect transistor M 3, the 4th field effect transistor M 4, the 5th field effect transistor M 5, the 6th field effect transistor M 6 and the 7th field effect transistor M 7,
Described overvoltage reference voltage input Vreg successively by the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7 is with the 4th tail current source I4 and then be connected with the earth;
Described the 4th resistance R 4 is connected by the 8th resistance R 8 and then with the grid of the second field effect transistor M 2, described the 8th resistance R 8 is also connected with the earth by the 3rd capacitor C 3, and the source electrode of the source electrode of described the second field effect transistor M 2 and the 3rd field effect transistor M 3 is all connected with the earth by the first tail current I1;
Described the 5th resistance R 5 is connected by the 9th resistance R 9 and then with the grid of the 4th field effect transistor M 4, described the 9th resistance R 9 is also connected with the earth by the 4th capacitor C 4, and the source electrode of the source electrode of described the 4th field effect transistor M 4 and the 5th field effect transistor M 5 is all connected with the earth by the second tail current I2;
Described the 6th resistance R 6 is connected by the tenth resistance R 10 and then with the grid of the 6th field effect transistor M 6, described the tenth resistance R 10 is also connected with the earth by the 5th capacitor C 5, and the source electrode of the source electrode of described the 6th field effect transistor M 6 and the 7th field effect transistor M 7 is all connected with the earth by the 3rd tail current I3;
The drain electrode of the drain electrode of the drain electrode of described the second field effect transistor M 2, the 4th field effect transistor M 4 and the 6th field effect transistor M 6 is all connected with power supply;
The drain electrode of the drain electrode of the drain electrode of described the 3rd field effect transistor M 3, the 5th field effect transistor M 5 and the 7th field effect transistor M 7 is all connected with the current input terminal of error amplifier EA;
The grid of the grid of the grid of described the 3rd field effect transistor M 3, the 5th field effect transistor M 5 and the 7th field effect transistor M 7 is all connected with the source electrode of the first field effect transistor M 1.
Be further used as preferred embodiment, described overvoltage protective module is stage by stage adjustable overvoltage protective module in three stages.
With reference to Fig. 7, be further used as preferred embodiment, described internal circuit comprises RC low pass filter, current source, the resistor voltage divider network that differential pair and belt switch are controlled, described RC low pass filter comprises the 3rd capacitor C 3, the 8th resistance R 8, the 4th capacitor C 4, the 9th resistance R 9, the 5th capacitor C 5 and the tenth resistance R 10, described current source comprises the first tail current source I1, the second tail current source I2, the 3rd tail current source I3 and the 4th tail current source I4, described differential pair comprises the second field effect transistor M 2, the 3rd field effect transistor M 3, the 4th field effect transistor M 4, the 5th field effect transistor M 5, the 6th field effect transistor M 6 and the 7th field effect transistor M 7,
The resistor voltage divider network that described belt switch is controlled comprises the first digital controlled signal input SW1, the 4th resistance R 4, the 8th field effect transistor M 8, the second digital controlled signal input SW2, the 5th resistance R 5, the 9th field effect transistor M 9, the 3rd digital controlled signal input SW3, the 6th resistance R 6, the tenth field effect transistor M 10, the 4th digital controlled signal input SW4, the 7th resistance R 7 and the 11 field effect transistor M 11;
Described overvoltage reference voltage input Vreg successively by the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7 is with the 4th tail current source I4 and then be connected with the earth;
The source electrode of described the 8th field effect transistor M 8 is connected with overvoltage reference voltage input Vreg, the drain electrode of described the 8th field effect transistor M 8 is connected with the 5th resistance R 5, and the grid of described the 8th field effect transistor M 8 is connected with the first digital controlled signal input SW1;
The source electrode of described the 9th field effect transistor M 9 is connected with the 4th resistance R 4, and the drain electrode of described the 9th field effect transistor M 9 is connected with the 6th resistance R 6, and the grid of described the 9th field effect transistor M 9 is connected with the second digital controlled signal input SW2;
The source electrode of described the tenth field effect transistor M 10 is connected with the 5th resistance M5, and the drain electrode of described the tenth field effect transistor M 10 is connected with the 7th resistance R 7, and the grid of described the 9th field effect transistor M 9 is connected with the 3rd digital controlled signal input SW3;
The source electrode of described the 11 field effect transistor M 11 is connected with the 6th resistance R 6, the drain electrode of described the 11 field effect transistor M 11 is connected with the 4th tail current source I4, and the grid of described the 11 field effect transistor M 11 is connected with the 4th digital controlled signal input SW4;
Described the 4th resistance R 4 is connected by the 8th resistance R 8 and then with the grid of the second field effect transistor M 2, described the 8th resistance R 8 is also connected with the earth by the 3rd capacitor C 3, and the source electrode of the source electrode of described the second field effect transistor M 2 and the 3rd field effect transistor M 3 is all connected with the earth by the first tail current I1;
Described the 5th resistance R 5 is connected by the 9th resistance R 9 and then with the grid of the 4th field effect transistor M 4, described the 9th resistance R 9 is also connected with the earth by the 4th capacitor C 4, and the source electrode of the source electrode of described the 4th field effect transistor M 4 and the 5th field effect transistor M 5 is all connected with the earth by the second tail current I2;
Described the 6th resistance R 6 is connected by the tenth resistance R 10 and then with the grid of the 6th field effect transistor M 6, described the tenth resistance R 10 is also connected with the earth by the 5th capacitor C 5, and the source electrode of the source electrode of described the 6th field effect transistor M 6 and the 7th field effect transistor M 7 is all connected with the earth by the 3rd tail current I3;
The drain electrode of the drain electrode of the drain electrode of described the second field effect transistor M 2, the 4th field effect transistor M 4 and the 6th field effect transistor M 6 is all connected with power supply;
The drain electrode of the drain electrode of the drain electrode of described the 3rd field effect transistor M 3, the 5th field effect transistor M 5 and the 7th field effect transistor M 7 is all connected with the current input terminal of error amplifier EA;
The grid of the grid of the grid of described the 3rd field effect transistor M 3, the 5th field effect transistor M 5 and the 7th field effect transistor M 7 is all connected with the source electrode of the first field effect transistor M 1.
Below in conjunction with specific embodiment, the present invention is described in further detail.
Embodiment mono-
It is example that the present embodiment be take overvoltage crowbar in three stages, and operation principle of the present invention is introduced.
When the N of overvoltage protective module gets 3 stage by stage, the present invention just becomes overvoltage crowbar in three stages, and its operation principle is:
Radio-frequency power amplifier power source voltage Vcc o and overvoltage reference voltage V reg that detection voltage input end is detected compare after series resistance dividing potential drop, three to pass by pressure ratio sampled voltage be respectively Vreg1, Vreg2, Vreg3, wherein Vreg1>Vreg2>Vreg3.
Under normal operating conditions, the power source voltage Vcc o of radio-frequency power amplifier is less than Vreg3 and keeps stable, 7Mos field effect transistor M 7 in differential pair now, 5Mos field effect transistor M 5 and 3Mos field effect transistor M 3 are all away from saturation region, be operated in not on-state, therefore the output current Iout of overvoltage protective module can not affect the normal work of error amplifier EA stage by stage, and power control signal Vramp controls power source voltage Vcc o and the Vcco=k*Vramp+Vo of radio-frequency power amplifier by error amplifier feedback control loop, wherein k is scale factor, Vo is voltage constant.
When the power source voltage Vcc o of radio-frequency power amplifier is during in overvoltage condition, three road differential pairs will according to the overpressure value of Vcco reality respectively with Vreg3, Vreg2, Vreg1 carries out overvoltage comparison, make and Vreg3, Vreg2, the differential pair tube 7Mos field effect transistor M 7 that Vreg1 is relevant, 5Mos field effect transistor M 5, 3Mos field effect transistor M 3 is saturation conduction successively, now output current Iout can be along with 7Mos field effect transistor M 7, 5Mos field effect transistor M 5, the increase of 3Mos field effect transistor M 3 On currents and increasing, and the increase of overvoltage crowbar output current Iout can make the output voltage V out of error amplifier increase (because the size by output current Iout can departure amplifier EA size and response time of output voltage V out) stage by stage, thereby the electric current of the 1Mos field effect transistor M 1 that reduced to flow through, thereby the power source voltage Vcc o of radio-frequency power amplifier is reduced, to realize overvoltage clamping protection.
Embodiment bis-
It is example that the present embodiment be take overvoltage protective module in three stages, and the situation that the present invention is applied to radio-frequency power amplifier is introduced.
With overvoltage protective module is corresponding in three stages; radio-frequency power amplifier of the present invention adopts three grades of radio-frequency power amplifiers; the power voltage terminal Vcco of three grades of radio-frequency power amplifiers is connected (being the present invention) with overvoltage protective module in three stages, and the output of three grades of radio-frequency power amplifiers is connected with antenna through matching network.
The present invention is applied to radio-frequency power amplifier two kinds of situations:
The first situation is to adopt the overvoltage protective module in three stages shown in Fig. 6 as actual overvoltage protective module; the circuit forming comprises three grades of radio-frequency power amplifiers, matching network and antennas, overvoltage protective module and power supply supplying module stage by stage; wherein, overvoltage protective module is comprised of 3 differential pairs, reference voltage resistor voltage divider network and current source stage by stage.
The second situation is to adopt the adjustable overvoltage protective module in three stages shown in Fig. 7 as actual overvoltage protective module; the circuit forming comprises three grades of radio-frequency power amplifiers, matching network and antennas, adjustable overvoltage protective module and power supply supplying module in three stages; wherein, overvoltage protective module comprises reference voltage resistor voltage divider network and the current source that 3 differential pairs, belt switch are controlled stage by stage.
The second situation is on the basis of the first situation, has increased ON-OFF control circuit, controls the divider resistance of answering in contrast by Digital Logic control signal (SW1～SW4), thereby realizes the adjustable function of overvoltage clamp function.
Compare with traditional overvoltage crowbar; this stage by stage overvoltage crowbar adopted the control model of radio frequency power tube drain voltage; at radio-frequency power amplifier during in overvoltage condition; overvoltage protective module can respond and start overvoltage protection fast stage by stage; can effectively reduce voltage overshoot, shorten overvoltage recovery time; and can make Vcco in a big way, accurately follow the variation of Vramp; thereby can realize the accurate control of Vramp to the power output of radio-frequency power amplifier; this circuit is convenient to integrated simultaneously; applied widely, flexibility is higher.
More than that better enforcement of the present invention is illustrated, but the invention is not limited to described embodiment, those of ordinary skill in the art also can make all equivalent variations or replacement under the prerequisite without prejudice to spirit of the present invention, and the distortion that these are equal to or replacement are all included in the application's claim limited range.
Claims (6)
1. the overvoltage crowbar stage by stage of a power amplifier, it is characterized in that: comprise power supply supplying module and overvoltage protective module stage by stage, described power supply supplying module comprises error amplifier (EA) and the first field-effect transistor (M1), the voltage output end (Vout) of described error amplifier (EA) is connected with the grid of the first field-effect transistor (M1), and the power end of the drain electrode of described the first field-effect transistor (M1) and error amplifier (EA) is all connected with supply voltage (Vbat); Described overvoltage protective module stage by stage comprises detection voltage input end (Vinc), internal circuit, current output terminal (Iout) and overvoltage reference voltage input (Vreg), described detection voltage input end (Vinc) is connected with the source electrode of the first field-effect transistor (M1), described detection voltage input end (Vinc) is all connected with internal circuit with overvoltage reference voltage input (Vreg), and described internal circuit is also connected with the current input terminal of error amplifier (EA) by current output terminal (Iout); The source electrode of described the first field-effect transistor (M1) is also connected with the supply voltage input (Vcco) of radio-frequency power amplifier.
2. the overvoltage crowbar stage by stage of a kind of power amplifier according to claim 1, it is characterized in that: described power supply supplying module also comprises power control signal input (Vramp), the first resistance (R1), the first electric capacity (C1), the second resistance (R2), the second electric capacity (C2) and the 3rd resistance (R3), described power control signal input (Vramp) passes through the first resistance (R1) and then is connected with the negative input end of error amplifier (EA), the negative input end of described error amplifier (EA) is also connected with the earth by the first electric capacity (C1), the positive input terminal of described error amplifier (EA) is connected with the earth by the second resistance (R2), at the positive input terminal of described error amplifier (EA) and detect and go back parallel join between voltage input end (Vinc) and have the second electric capacity (C2) and the 3rd resistance (R3).
3. the overvoltage crowbar stage by stage of a kind of power amplifier according to claim 2, is characterized in that: described overvoltage protective module is stage by stage overvoltage protective module in three stages.
4. the overvoltage crowbar stage by stage of a kind of power amplifier according to claim 3, is characterized in that:
Described internal circuit comprises resistor voltage divider network, RC low pass filter, current source and differential pair, described resistor voltage divider network comprises the 4th resistance (R4), the 5th resistance (R5), the 6th resistance (R6) and the 7th resistance (R7), described RC low pass filter comprises the 3rd electric capacity (C3), the 8th resistance (R8), the 4th electric capacity (C4), the 9th resistance (R9), the 5th electric capacity (C5) and the tenth resistance (R10), described current source comprises the first tail current source (I1), the second tail current source (I2), the 3rd tail current source (I3) and the 4th tail current source (I4), described differential pair comprises the second field-effect transistor (M2), the 3rd field-effect transistor (M3), the 4th field-effect transistor (M4), the 5th field-effect transistor (M5), the 6th field-effect transistor (M6) and the 7th field-effect transistor (M7),
Described overvoltage reference voltage input (Vreg) successively by the 4th resistance (R4), the 5th resistance (R5), the 6th resistance (R6), the 7th resistance (R7) is with the 4th tail current source (I4) and then be connected with the earth;
Described the 4th resistance (R4) passes through the 8th resistance (R8) and then is connected with the grid of the second field-effect transistor (M2), described the 8th resistance (R8) is also connected with the earth by the 3rd electric capacity (C3), and the source electrode of the source electrode of described the second field-effect transistor (M2) and the 3rd field-effect transistor (M3) is all connected with the earth by the first tail current (I1);
Described the 5th resistance (R5) passes through the 9th resistance (R9) and then is connected with the grid of the 4th field-effect transistor (M4), described the 9th resistance (R9) is also connected with the earth by the 4th electric capacity (C4), and the source electrode of the source electrode of described the 4th field-effect transistor (M4) and the 5th field-effect transistor (M5) is all connected with the earth by the second tail current (I2);
Described the 6th resistance (R6) passes through the tenth resistance (R10) and then is connected with the grid of the 6th field-effect transistor (M6), described the tenth resistance (R10) is also connected with the earth by the 5th electric capacity (C5), and the source electrode of the source electrode of described the 6th field-effect transistor (M6) and the 7th field-effect transistor (M7) is all connected with the earth by the 3rd tail current (I3);
The drain electrode of the drain electrode of described the second field-effect transistor (M2), the 4th field-effect transistor (M4) is all connected with power supply with the drain electrode of the 6th field-effect transistor (M6);
The drain electrode of the drain electrode of the drain electrode of described the 3rd field-effect transistor (M3), the 5th field-effect transistor (M5) and the 7th field-effect transistor (M7) is all connected with the current input terminal of error amplifier (EA);
The grid of the grid of the grid of described the 3rd field-effect transistor (M3), the 5th field-effect transistor (M5) and the 7th field-effect transistor (M7) is all connected with the source electrode of the first field-effect transistor (M1).
5. the overvoltage crowbar stage by stage of a kind of power amplifier according to claim 2, is characterized in that: described overvoltage protective module is stage by stage adjustable overvoltage protective module in three stages.
6. the overvoltage crowbar stage by stage of a kind of power amplifier according to claim 5, it is characterized in that: described internal circuit comprises RC low pass filter, current source, the resistor voltage divider network that differential pair and belt switch are controlled, described RC low pass filter comprises the 3rd electric capacity (C3), the 8th resistance (R8), the 4th electric capacity (C4), the 9th resistance (R9), the 5th electric capacity (C5) and the tenth resistance (R10), described current source comprises the first tail current source (I1), the second tail current source (I2), the 3rd tail current source (I3) and the 4th tail current source (I4), described differential pair comprises the second field-effect transistor (M2), the 3rd field-effect transistor (M3), the 4th field-effect transistor (M4), the 5th field-effect transistor (M5), the 6th field-effect transistor (M6) and the 7th field-effect transistor (M7),
The resistor voltage divider network that described belt switch is controlled comprises the first digital controlled signal input (SW1), the 4th resistance (R4), the 8th field-effect transistor (M8), the second digital controlled signal input (SW2), the 5th resistance (R5), the 9th field-effect transistor (M9), the 3rd digital controlled signal input (SW3), the 6th resistance (R6), the tenth field-effect transistor (M10), the 4th digital controlled signal input (SW4), the 7th resistance (R7) and the 11 field-effect transistor (M11),
Described overvoltage reference voltage input (Vreg) successively by the 4th resistance (R4), the 5th resistance (R5), the 6th resistance (R6), the 7th resistance (R7) is with the 4th tail current source (I4) and then be connected with the earth;
The source electrode of described the 8th field-effect transistor (M8) is connected with overvoltage reference voltage input (Vreg), the drain electrode of described the 8th field-effect transistor (M8) is connected with the 5th resistance (R5), and the grid of described the 8th field-effect transistor (M8) is connected with the first digital controlled signal input (SW1);
The source electrode of described the 9th field-effect transistor (M9) is connected with the 4th resistance (R4), the drain electrode of described the 9th field-effect transistor (M9) is connected with the 6th resistance (R6), and the grid of described the 9th field-effect transistor (M9) is connected with the second digital controlled signal input (SW2);
The source electrode of described the tenth field-effect transistor (M10) is connected with the 5th resistance (M5), the drain electrode of described the tenth field-effect transistor (M10) is connected with the 7th resistance (R7), and the grid of described the 9th field-effect transistor (M9) is connected with the 3rd digital controlled signal input (SW3);
The source electrode of described the 11 field-effect transistor (M11) is connected with the 6th resistance (R6), the drain electrode of described the 11 field-effect transistor (M11) is connected with the 4th tail current source (I4), and the grid of described the 11 field-effect transistor (M11) is connected with the 4th digital controlled signal input (SW4);
Described the 4th resistance (R4) passes through the 8th resistance (R8) and then is connected with the grid of the second field-effect transistor (M2), described the 8th resistance (R8) is also connected with the earth by the 3rd electric capacity (C3), and the source electrode of the source electrode of described the second field-effect transistor (M2) and the 3rd field-effect transistor (M3) is all connected with the earth by the first tail current (I1);
Described the 5th resistance (R5) passes through the 9th resistance (R9) and then is connected with the grid of the 4th field-effect transistor (M4), described the 9th resistance (R9) is also connected with the earth by the 4th electric capacity (C4), and the source electrode of the source electrode of described the 4th field-effect transistor (M4) and the 5th field-effect transistor (M5) is all connected with the earth by the second tail current (I2);
Described the 6th resistance (R6) passes through the tenth resistance (R10) and then is connected with the grid of the 6th field-effect transistor (M6), described the tenth resistance (R10) is also connected with the earth by the 5th electric capacity (C5), and the source electrode of the source electrode of described the 6th field-effect transistor (M6) and the 7th field-effect transistor (M7) is all connected with the earth by the 3rd tail current (I3);
The drain electrode of the drain electrode of described the second field-effect transistor (M2), the 4th field-effect transistor (M4) is all connected with power supply with the drain electrode of the 6th field-effect transistor (M6);
The drain electrode of the drain electrode of the drain electrode of described the 3rd field-effect transistor (M3), the 5th field-effect transistor (M5) and the 7th field-effect transistor (M7) is all connected with the current input terminal of error amplifier (EA);
The grid of the grid of the grid of described the 3rd field-effect transistor (M3), the 5th field-effect transistor (M5) and the 7th field-effect transistor (M7) is all connected with the source electrode of the first field-effect transistor (M1).
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| CN201410183031.5A CN103973237B (en) | 2014-04-30 | 2014-04-30 | Staging overvoltage protection circuit of power amplifier |
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| CN201410183031.5A CN103973237B (en) | 2014-04-30 | 2014-04-30 | Staging overvoltage protection circuit of power amplifier |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105373178A (en) * | 2014-08-15 | 2016-03-02 | 深圳市中兴微电子技术有限公司 | Circuit starting method, control circuit, and voltage reference circuit |
| CN107154785A (en) * | 2017-06-29 | 2017-09-12 | 广州慧智微电子有限公司 | One kind control circuit, power amplification circuit and method |
| CN109600133A (en) * | 2017-09-30 | 2019-04-09 | 瑞昱半导体股份有限公司 | It can be avoided the circuit of the damage of overvoltage |
| CN112086945A (en) * | 2020-08-05 | 2020-12-15 | 广东美的白色家电技术创新中心有限公司 | Overvoltage protection circuit and electronic equipment |
| CN113067555A (en) * | 2021-06-03 | 2021-07-02 | 上海芯龙半导体技术股份有限公司 | Gain compensation circuit of error amplifier and switching power supply |
| WO2023065844A1 (en) * | 2021-10-19 | 2023-04-27 | 深圳飞骧科技股份有限公司 | Boost protection circuit, power amplifier, and related chip |
| CN110149098B (en) * | 2019-04-11 | 2023-10-31 | 广州慧智微电子股份有限公司 | Protective circuit of radio frequency power amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201294489Y (en) * | 2008-12-04 | 2009-08-19 | 深圳创维－Rgb电子有限公司 | Load circuit, power supply circuit and electronic equipment |
| US9559639B2 (en) * | 2009-08-19 | 2017-01-31 | Qualcomm Incorporated | Protection circuit for power amplifier |
| CN201887469U (en) * | 2010-12-31 | 2011-06-29 | 惠州市正源微电子有限公司 | Over-voltage protection circuit for radio frequency power amplifier |
| CN203491667U (en) * | 2013-09-24 | 2014-03-19 | 成都新方洲信息技术有限公司 | Overvoltage protector used for radiofrequency launcher of Internet of Things |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105373178A (en) * | 2014-08-15 | 2016-03-02 | 深圳市中兴微电子技术有限公司 | Circuit starting method, control circuit, and voltage reference circuit |
| CN105373178B (en) * | 2014-08-15 | 2018-02-02 | 深圳市中兴微电子技术有限公司 | Circuit start method, control circuit and voltage reference circuit |
| US10317920B2 (en) | 2014-08-15 | 2019-06-11 | Zte Corporation | Circuit starting method, control circuit and voltage reference |
| CN107154785A (en) * | 2017-06-29 | 2017-09-12 | 广州慧智微电子有限公司 | One kind control circuit, power amplification circuit and method |
| CN109600133A (en) * | 2017-09-30 | 2019-04-09 | 瑞昱半导体股份有限公司 | It can be avoided the circuit of the damage of overvoltage |
| CN110149098B (en) * | 2019-04-11 | 2023-10-31 | 广州慧智微电子股份有限公司 | Protective circuit of radio frequency power amplifier |
| CN112086945A (en) * | 2020-08-05 | 2020-12-15 | 广东美的白色家电技术创新中心有限公司 | Overvoltage protection circuit and electronic equipment |
| CN113067555A (en) * | 2021-06-03 | 2021-07-02 | 上海芯龙半导体技术股份有限公司 | Gain compensation circuit of error amplifier and switching power supply |
| WO2023065844A1 (en) * | 2021-10-19 | 2023-04-27 | 深圳飞骧科技股份有限公司 | Boost protection circuit, power amplifier, and related chip |
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