CN103972312A - 高速响应光电探测器 - Google Patents

高速响应光电探测器 Download PDF

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CN103972312A
CN103972312A CN201410220707.3A CN201410220707A CN103972312A CN 103972312 A CN103972312 A CN 103972312A CN 201410220707 A CN201410220707 A CN 201410220707A CN 103972312 A CN103972312 A CN 103972312A
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CN103972312B (zh
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邓光平
刘昌举
李明
祝晓笑
李毅强
任思伟
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CETC 44 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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Abstract

一种高速响应光电探测器，包括多个光电二极管，所述多个光电二极管按一维阵列形式分布，单个光电二极管的轴向与一维阵列的延伸方向垂直，其创新在于：所述光电二极管由P型衬底、N-区和N区组成；所述N-区由在P型衬底内离子注入掺杂形成，所述N区由在N-区内离子注入掺杂形成；所述P型衬底、N-区和N区形成P-i-N结；所述N区的厚度沿光电二极管轴向逐渐变厚且呈阶梯形分布，N区厚度最厚处的表层区域形成收集端；N区范围内的杂质掺杂浓度均一，N区的杂质掺杂浓度高于N-区。本发明的有益技术效果是：可以大幅提高光电探测器的响应速度，保证对高速运动的条形码的清楚识别。

Description

高速响应光电探测器
技术领域
本发明涉及一种条形码扫描器，尤其涉及一种高速响应光电探测器。
背景技术
条形码扫描是一种较为成熟的自动识别技术，它被广泛应用于工业控制、交通、物流和仓储等领域。
条形码扫描器的原理为：先采用发光二极管阵列照射整个条形码，然后通过透镜将条形码符号映射到由光电二极管阵列组成的探测器上，经探测器完成光电转换，生成一组脉冲信号，再由读出电路将探测器阵列中的每一个光电二极管信号进行依次读取，最后利用特定的处理算法辨识出条码信息。
在工业控制领域，大规模的物品加工和定位要求扫描器能够对条形码进行快速读取并将信号反馈到控制系统，这些条形码通过扫描器的速度通常在几十米每秒到一百米每秒之间的范围，如果光电探测器的响应速度较慢，会导致扫描出的条形码发生模糊，得到错误的结果。
发明内容
针对背景技术中的问题，本发明提出了一种高速响应光电探测器，包括多个光电二极管，所述多个光电二极管按一维阵列形式分布，单个光电二极管的轴向与一维阵列的延伸方向垂直，其创新在于：所述光电二极管由P型衬底、N-区和N区组成；所述N-区由在P型衬底内离子注入掺杂形成，所述N区由在N-区内离子注入掺杂形成；所述P型衬底、N-区和N区形成P-i-N结；所述N区的厚度沿光电二极管轴向逐渐变厚且呈阶梯形分布，N区厚度最厚处的表层区域形成收集端；N区范围内的杂质掺杂浓度均一，N区的杂质掺杂浓度高于N-区。
本发明的原理是：基于现有理论可知，电子浓度的不均匀导致电子从高浓度区域向低浓度区域扩散，但是电离的施主杂质却无法移动，于是在施主杂质浓度高的地方电子浓度低于施主杂质浓度，另外施主杂质带正电荷，所以造成高浓度施主杂质区域N区表现为带正电荷。同理，在低浓度施主杂质区域N-区表现为带负电荷。上述空间电荷的分离便形成了内建电场。现有技术中，受限于器件结构，光电二极管中的光生电荷仅能够在外加电场的作用下被扫向电荷收集端，而N区采用本发明的阶梯形结构后，在阶梯形上的单个台阶处，形成的内建电场使电子不仅会向垂直方向漂移，还会向水平方向漂移，其原理如图3所示，其中E1代表垂直方向的内建电场，E2代表水平方向的内建电场。器件工作时，除外加电场作用外，光生电荷中的电子还将受到E1与E2两个方向上的内建电场作用，最终形成外加电场与内建电场共同作用的加速漂移运动，从而使电子能以更快的速度运动至收集端，如果将处理电路的输入端与收集端相连，将大大提高光电探测器的响应速度。
优选地，单个光电二极管的表层处设置有多个用于欧姆接触的N+区，同一光电二极管上的N+区沿着光电二极管的轴向按一维阵列形式分布。同一光电二极管上的多个N+区均通过金属层并联到处理电路的输入端，可以大幅缩短距输入端较远处的电子行程，进一步提高处理电路对电子的收集效率。
优选地，多个光电二极管上的N+区按矩阵形式分布。
前述处理电路的电气结构与现有技术相同，它采用运算放大器、复位开关和积分电容搭建，其结构如图2所示。
当将本发明的高速响应光电探测器应用于条形码扫描器后，扫描曝光时间将从原有的几百微秒降低到几微秒，甚至可降至几百纳秒。扫描曝光时间的大幅缩短可以保证设备对高速运动的条形码进行清楚识别，保证生产过程高效进行。
本发明的有益技术效果是：可以大幅提高光电探测器的响应速度，保证对高速运动的条形码的清楚识别。
附图说明
图1、本发明的光电二极管结构示意图（图中箭头所示方向即为光电二极管的轴向方向）；
图2、本发明的处理电路的电气原理示意图；
图3、本发明所形成的内建电场的原理示意图；
图4、光电二极管阵列俯视图（图中箭头所示方向即为光电二极管的轴向方向）；
图中各个标记所对应的名称分别为：P型衬底1、N-区2、N区3、N+区4、介质层5、输入端6、运算放大器7、复位开关8、积分电容9、处理电路10。
具体实施方式
一种高速响应光电探测器，包括多个光电二极管，所述多个光电二极管按一维阵列形式分布，单个光电二极管的轴向与一维阵列的延伸方向垂直，其创新在于：所述光电二极管由P型衬底1、N-区2和N区3组成；所述N-区2由在P型衬底1内离子注入掺杂形成，所述N区3由在N-区2内离子注入掺杂形成；所述P型衬底1、N-区2和N区3形成P-i-N结；所述N区3的厚度沿光电二极管轴向逐渐变厚且呈阶梯形分布，N区3厚度最厚处的表层区域形成收集端；N区3范围内的杂质掺杂浓度均一，N区3的杂质掺杂浓度高于N-区2。
进一步地，单个光电二极管的表层处设置有多个用于欧姆接触的N+区4，同一光电二极管上的N+区4沿光电二极管轴向按一维阵列形式分布。
进一步地，多个光电二极管上的N+区4按矩阵形式分布。

Claims (3)

1.一种高速响应光电探测器，包括多个光电二极管，所述多个光电二极管按一维阵列形式分布，单个光电二极管的轴向与一维阵列的延伸方向垂直，其特征在于：所述光电二极管由P型衬底（1）、N-区（2）和N区（3）组成；所述N-区（2）由在P型衬底（1）内离子注入掺杂形成，所述N区（3）由在N-区（2）内离子注入掺杂形成；所述P型衬底（1）、N-区（2）和N区（3）形成P-i-N结；所述N区（3）的厚度沿光电二极管轴向逐渐变厚且呈阶梯形分布，N区（3）厚度最厚处的表层区域形成收集端；N区（3）范围内的杂质掺杂浓度均一，N区（3）的杂质掺杂浓度高于N-区（2）。
2.根据权利要求1所述的高速响应光电探测器，其特征在于：单个光电二极管的表层处设置有多个用于欧姆接触的N+区（4），同一光电二极管上的N+区（4）沿光电二极管轴向按一维阵列形式分布。
3.根据权利要求2所述的高速响应光电探测器，其特征在于：多个光电二极管上的N+区（4）按矩阵形式分布。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105262548A (zh) * 2015-10-20 2016-01-20 中国电子科技集团公司第四十四研究所 光接收电路
CN112433395A (zh) * 2020-12-02 2021-03-02 联合微电子中心有限责任公司 硅光调制器及其制造方法

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CN101090138A (zh) * 2007-07-02 2007-12-19 重庆大学 P+pin硅光电探测器
CN101958362A (zh) * 2009-07-17 2011-01-26 北京邮电大学 纳米波导结构半导体光探测器制备方法
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CN101090138A (zh) * 2007-07-02 2007-12-19 重庆大学 P+pin硅光电探测器
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CN105262548A (zh) * 2015-10-20 2016-01-20 中国电子科技集团公司第四十四研究所 光接收电路
CN105262548B (zh) * 2015-10-20 2017-09-22 中国电子科技集团公司第四十四研究所 光接收电路
CN112433395A (zh) * 2020-12-02 2021-03-02 联合微电子中心有限责任公司 硅光调制器及其制造方法

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