CN103972121B - The disconnected GTG detection method of wafer - Google Patents
The disconnected GTG detection method of wafer Download PDFInfo
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- CN103972121B CN103972121B CN201310037730.4A CN201310037730A CN103972121B CN 103972121 B CN103972121 B CN 103972121B CN 201310037730 A CN201310037730 A CN 201310037730A CN 103972121 B CN103972121 B CN 103972121B
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- wafer
- splitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The GTG detection method the present invention relates to a kind of wafer does not break, after judging that wafer is cleaved, whether wafer disconnects, and it comprises step S1：Obtain wafer image, step S2 before splitting：Examination splitting obtains gray scale variation marginal value, step S3：Automatically produced and opened light source, step S4：Splitting wafer, step S5：Obtain wafer image and step S6 after splitting：Judge whether wafer disconnects, whether the average gray-scale value of its wafer image mainly before judging this wafer splitting and the wafer image after this wafer splitting changes exceedes marginal value, to judge whether this wafer disconnects, accordingly, the present invention has rapid-action characteristic by light, reduces whether this wafer of interpretation disconnects the required time, and its image capture device is less demanding for resolution, thus setup cost is cheap, therefore can meet using upper demand.
Description
Technical field
The present invention relates to the method for splitting wafer, the method whether disconnecting after especially relating to detect wafer splitting.
Background technology
Refer to shown in Fig. 1 and Fig. 2, wafer splitting machine 1 is used for wafer 2 being cleaved crystal grain for a grain, after carrying out
Continuous encapsulation operation, wafer 2, before being cleaved, first can go out precut 3 laterally and longitudinally with cut, then by crystalline substance
After the blue film 4 of circle 2 attaching one is fixed, a wafer splitting machine 1 is sent into by a stationary fixture 5 and carries out splitting operation.
Wafer splitting machine 1 comprises a wafer fixed seat 6, a cantilever lever 7, a chopper 8, an image acquisition element 9, a compacting
Element 10 and a lighting source 11, this wafer fixed seat 6 this stationary fixture 5 sandwiched, and movement and the rotation of in-plane can be made,
This chopper 8 is fixed on this cantilever lever 7 and the top located at this wafer 2, to carry out splitting operation, and is carrying out splitting operation
When, it is to compress this wafer 2 using this press element 10, to avoid wafer 2 warpage, and this lighting source 11 then can integrally connected ground
It is arranged on this press element 10, it is used for producing imaging source（Not shown）Irradiate this wafer 2, to penetrate wafer 2, and this figure
As acquisition elements 9 are then located at the lower section of this wafer 2, for gathering the image of this wafer 2, to learn the position of this wafer 2.
Thus this wafer 2 can pass through displacement and this image acquisition element 9 capture to this wafer 2 of this wafer fixed seat 6
And positioned, and after positioning completes, you can by the quantitative position of the upper and lower displacement of this chopper 8 and this wafer fixed seat 6
Move, splitting is carried out continuously to multiple precut 3, and this image acquisition element 9, then in continuous cleaving process, persistently monitors this pre-
Whether the positioning of tangent line 3 offsets, and compensates positioning with the degree regarding skew, and precut 3 laterally and longitudinally ought all be split it
Complete splitting operation afterwards.
Work as process deviation again, lead to wafer 2 to have not break during phenomenon it is known that needs are reorientated finds not disconnected position in addition
Split manually, it is not only time-consuming and para-position does not easily cause crumbling of wafer 2 on time, causes the decline of yield again.Therefore, make at present
Method is to be whether detection wafer 2 disconnects after splitting, if not disconnecting, deepening cutter spacing, directly splitting again till wafer 2 disconnects.
And whether detection wafer 2 disconnects after splitting it is known that TaiWan, China bulletin I351069 patent, disclose
A kind of optics inspection method of wafer sliver, its method is the wafer image before and after collection splitting, and utilizes computer for analysis wafer
Cutting Road width dimensions difference in image before and after sliver, and then judge whether this wafer impact sliver is correct, namely judge brilliant
Whether circle disconnects really.
However, this traditional methods, the change of width dimensions to be calculated, first have to learn Cutting Road width before and after splitting, but
It is that Cutting Road width variation differs or unchanged, and False Rate is higher because wafer process characteristic is different, and in order to allow image to judge
Width, chopper must maintain bottom to maintain width variation, and speed is slower, therefore known optical inspection, not only misses
Sentence that rate is higher, and speed slow it is impossible to meet using upper demand.
Content of the invention
Therefore, present invention is primarily targeted at providing a kind of wafer disconnected GTG detection method, it passes through optical imagery
The change of average gray-scale value, quickly judges whether wafer disconnects.
Through as known from the above, for reaching above-mentioned purpose, the present invention is a kind of disconnected GTG detection method of wafer, for judging one
After wafer is cleaved, whether this wafer disconnects, and it comprises step S1：Obtain wafer image before splitting；Step S2：Examination splitting takes
Obtain gray scale variation marginal value；Step S3：Automatically produced and opened light source；Step S4：Splitting wafer；Step S5：Acquirement is split
Split rear wafer image and step S6：Judge whether wafer disconnects.
Wherein step S1：Obtain wafer image before splitting, be to gather the crystalline substance before this wafer splitting by an image acquisition device
Circular image；Step S2：Examination splitting obtains gray scale variation marginal value, for manually trying the mode split, finds out gray scale variation critical
Value；Step S3：Automatically produced and opened light source, for opening automation mechanized operation, and this wafer is irradiated by a light source；Step
S4：Splitting wafer, is to carry out splitting action to this wafer；Step S5：Obtain wafer image after splitting, be by this image acquisition
Device gathers the wafer image after this wafer splitting；Step S6：Judge whether wafer disconnects, be by a graphics processing unit foundation
Whether the average gray-scale value of the wafer image after the wafer image before this wafer splitting and this wafer splitting changes, and to judge this crystalline substance
Whether circle disconnects.
Accordingly, the present invention has rapid-action characteristic by light, by obtain the wafer image before this wafer splitting with
Whether the average gray-scale value of the wafer image after this wafer splitting, observes whether it changes, and estimate this wafer and disconnect, its reaction
Fast and accurately spend high, the computational burden for image procossing is also little, can rapidly determine result, to meet use
On needs.
Brief description
Fig. 1 is the structure chart of known wafer.
Fig. 2 is the structure chart of known wafer splitting machine.
Fig. 3 is the block diagram of the determination methods of the present invention.
Fig. 4 is the image graph that do not disconnect of wafer of the present invention.
Fig. 5 is the image graph of the wafer disconnection of the present invention.
Fig. 6 is the selection schematic diagram of the comparison area of the present invention.
Specific embodiment
The feature to the present invention for the those of ordinary skill, purpose and effect for making described field have more deep understanding
With approval, now enumerate preferred embodiment and coordinate schema to be described as follows：
Refer to shown in Fig. 3, Fig. 4 and Fig. 5, the present invention is a kind of disconnected GTG detection method of wafer, for judging that one is brilliant
After circle 20 is cleaved, whether this wafer 20 disconnects, and it comprises step S1：Obtain wafer image before splitting；Step S2：Examination splitting
Obtain gray scale variation marginal value；Step S3：Automatically produced and opened light source；Step S4：Splitting wafer；Step S5：Obtain
Wafer image and step S6 after splitting：Judge whether wafer disconnects.
Wherein, step S1：Obtain wafer image before splitting, be to gather the crystalline substance before this wafer splitting by an image acquisition device
Circular image.
Step S2：Examination splitting obtains gray scale variation marginal value, for manually trying the mode split, finds out gray scale variation critical
Value, for general wafer 20, before the switch-off, usual brightness is relatively low for this wafer 20（As Fig. 4）, there is relatively low grey decision-making,
And after working as wafer 20 disconnection, then brightness can increase（As Fig. 5）, there is higher grey decision-making.Therefore the present invention can choose by the gross
Any one of wafer 20, is tried manually to split, and is observed the change of its grey decision-making, for example, if average gray-scale value is by 50
Increase to 150, then can take the critical point whether middle numerical value changes as average gray-scale value, be i.e. critical point is 100.
Step S3：Automatically produced and opened light source, for opening automation mechanized operation, and this wafer is irradiated by a light source
20, main purpose is to increase the brightness of this wafer 20.
Step S4：Splitting wafer, is to carry out splitting action to this wafer 20, it is to be cleaved by the splitting machine commonly used
Wafer 20.
Step S5：Obtain wafer image after splitting, be the wafer after this image acquisition device gathers the splitting of this wafer 20
Image.
Step S6：Judge whether wafer disconnects, be according to the wafer before the splitting of this wafer 20 by a graphics processing unit
Whether the average gray-scale value of the wafer image after the splitting of image and this wafer 20 changes, and to judge whether this wafer 20 disconnects.?
I.e. for other wafers 20, the average gray-scale value that can set the wafer image after the splitting of this wafer 20 is more than 100（Critical
Value）When, it is judged to disconnect, otherwise be then not disconnect.
The present invention, according to the judged result of step S6, can carry out step S7 more again：Deepen cutter spacing, or step S8：Complete
Splitting flow process.Wherein, step S7：Deepen cutter spacing, be when judging that this wafer 20 does not disconnect, the cutter spacing of intensification splitting action is deep
Degree, and return to step S4, it passes through to deepen the cutter spacing depth of splitting action（Increase the depth of splitting）Mode, and make this crystalline substance
Circle 20 disconnects really.And step S8：Complete to cleave flow process, be that then this wafer 20 is moved to down when judging that this wafer 20 disconnects
One cutter position, to carry out the splitting of next knife, to complete to cleave flow process.
Referring again to shown in Fig. 6, the present invention can also comprise step S1-1：Set up comparison area, it is to be walked
Before rapid S2, user can be made in the pickup area 30 of this image acquisition device, be directed to the wafer figure before the splitting of this wafer 20
As the wafer image after cleaving with this wafer 20 is it is contemplated that have at significant change, a comparison area 31 selected by circle, and at this image
Whether reason unit changes according to the average gray-scale value of this comparison area 31, to judge whether this wafer 20 disconnects.Thus by being somebody's turn to do
The use of comparison area 31, can increase the wafer image after the wafer image before the splitting of this wafer 20 is cleaved with this wafer 20
Average gray-scale value difference, to accelerate the speed and the degree of accuracy that judge.
As described above, the present invention has rapid-action characteristic by light, by obtaining the wafer figure before this wafer splitting
As with this wafer splitting after wafer image average gray-scale value, observe whether it changes, and estimate this wafer and whether disconnect, its
Reaction is quick and less demanding for image resolution ratio, thus setup cost is cheap, for the computational burden of image procossing
Less, result can rapidly be determined, to meet using upper needs.
Claims (4)
1. the disconnected GTG detection method of a kind of wafer, after judging that a wafer is cleaved, whether described wafer disconnects, and it is special
Levy and be, comprise：
Step S1：Obtain wafer image before splitting, wherein, the wafer figure before described wafer splitting is gathered by an image acquisition device
Picture；
Step S2：Examination splitting, to obtain gray scale variation marginal value, wherein, manually tries the mode split, and finds out described GTG and becomes
Change marginal value；
Step S3：Automatically produced and opened light source, wherein, open automation mechanized operation, and described crystalline substance is irradiated by a light source
Circle；
Step S4：Splitting wafer, wherein, carries out splitting action to described wafer；
Step S5：Obtain splitting after wafer image, wherein, by described image harvester gather described wafer splitting after wafer
Image；
Step S6：Judge whether wafer disconnects, wherein, by a graphics processing unit according to the described crystalline substance before described wafer splitting
Whether the average gray-scale value of the described wafer image after circular image and described wafer splitting changes, and to judge whether described wafer breaks
Open.
2. wafer according to claim 1 does not break GTG detection method it is characterised in that also comprising step S7：Deepen
Cutter spacing, wherein, when judging that described wafer does not disconnect, deepens the cutter spacing depth of splitting action, and returns to described step S4.
3. wafer according to claim 1 does not break GTG detection method it is characterised in that also comprising step S8：Complete
Splitting flow process, wherein, when judging that described wafer disconnects, then described wafer carries out the splitting of next knife, to complete to cleave flow process.
4. wafer according to claim 1 does not break GTG detection method it is characterised in that also comprising step S1-1：Build
Vertical comparison area, wherein, before carrying out described step S2, makes user in the pickup area of described image harvester, circle
Select a comparison area, whether described image processing unit changes according to the average gray-scale value of described comparison area, to judge institute
State whether wafer disconnects.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310037730.4A CN103972121B (en) | 2013-01-30 | 2013-01-30 | The disconnected GTG detection method of wafer |
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| CN201310037730.4A CN103972121B (en) | 2013-01-30 | 2013-01-30 | The disconnected GTG detection method of wafer |
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| CN103972121A CN103972121A (en) | 2014-08-06 |
| CN103972121B true CN103972121B (en) | 2017-03-01 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047576A (en) * | 2015-07-09 | 2015-11-11 | 深圳市华腾半导体设备有限公司 | Chip fracture image detection method |
| CN107546300B (en) * | 2016-06-29 | 2020-10-30 | 晶能光电（江西）有限公司 | Cutting and splitting method of LED chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW351069U (en) * | 1998-02-13 | 1999-01-21 | Racer Sporting Goods Co Ltd | Novel helmet |
| CN1787201A (en) * | 2005-10-24 | 2006-06-14 | 中国电子科技集团公司第四十五研究所 | Apparatus for automatically distinguishing and aligning wafer of wafer cutter and method thereof |
| CN101701801A (en) * | 2009-11-17 | 2010-05-05 | 博磊科技股份有限公司 | Method for inspecting non-workpiece shear mark |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200931552A (en) * | 2008-01-11 | 2009-07-16 | Horng Terng Automation Co Ltd | Optical detection method of cleaving wafer |
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2013
- 2013-01-30 CN CN201310037730.4A patent/CN103972121B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW351069U (en) * | 1998-02-13 | 1999-01-21 | Racer Sporting Goods Co Ltd | Novel helmet |
| CN1787201A (en) * | 2005-10-24 | 2006-06-14 | 中国电子科技集团公司第四十五研究所 | Apparatus for automatically distinguishing and aligning wafer of wafer cutter and method thereof |
| CN101701801A (en) * | 2009-11-17 | 2010-05-05 | 博磊科技股份有限公司 | Method for inspecting non-workpiece shear mark |
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| CN103972121A (en) | 2014-08-06 |
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