CN103972031A - Field emission light source - Google Patents
Field emission light source Download PDFInfo
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- CN103972031A CN103972031A CN201310033635.7A CN201310033635A CN103972031A CN 103972031 A CN103972031 A CN 103972031A CN 201310033635 A CN201310033635 A CN 201310033635A CN 103972031 A CN103972031 A CN 103972031A
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- cathode
- light source
- field emission
- anode
- emission light
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Abstract
A field emission light source comprises an anode case, a sealing part and a cathode body. The anode case is provided with a first through hole, and the sealing part is embedded into the first through hole in a matching mode and provided with a second through hole. The cathode body is contained in the cavity of the anode case and comprises a main body portion, a cathode emitter structure and a cathode guide rod. The cathode emitter structure comprises a plurality of supporting portions and electron emission layers, wherein the supporting portions and the electron emission layers are uniformly distributed on the outer wall of the main body portion and the first surfaces of the supporting portions are arc surfaces with the middle portions protruding and are covered with the electron emission layers. The electron emission layers are used for emitting electron beams, and the anode case receives the electron beams and emits light. The second surfaces of the supporting portions are fixedly attached to the main body portion. The cathode guide rod is arranged on the outer wall of the main body portion, extends in the direction far away from the cathode body and is embedded into the second through hole in a matching mode. A closed cavity is formed between the anode case and the cathode body. According to the structure, the light output area of the field emission light source can be increased, the brightness of the field emission light source can be improved, the stability of the field emission light source can be improved, the service life can be prolonged, and the working performance can be optimized.
Description
Technical field
The present invention relates to lighting field, relate in particular to a kind of field emission light source.
Background technology
A kind of green energy conservation lighting source of field emission light source, its principle is to utilize the electron emission layer on cathode to launch electron beam, and under the effect of electric field, the luminescent layer on beam bombardment excitation anode housing and send uniform visible ray.
The cathode of existing field emission light source, the nano thin-film that coating or growth continuous uniform distribute is conventionally as electron emission layer.But the resistance of the electron emission layer existing with full wafer continuous film own, and electron emission layer is larger with the resistance contacting between cathode carrier, in the time that described cathode has electric current, the Joule heat that above-mentioned resistance produces is more, easily burn described cathode, cause the poor stability of field emission light source, life-span short.
In addition, prove after deliberation, in the time that the pantostrat area of electron emission layer reaches certain numerical value, under the factor impacts such as screen effect, electron beam current cannot increase, thereby cause the emitting brightness of described field emission light source lower, affect its quality.
Summary of the invention
Technical problem to be solved by this invention is, a kind of field emission light source is provided, and has increased lighting area and the brightness of described field emission light source, has optimized the service behaviour of described field emission light source, and stability is strong, the life-span is longer.
In order to solve the problems of the technologies described above, the embodiment of the present invention provides a kind of field emission light source, comprise anode casing, seal and cathode, described anode casing is offered the first through hole, described seal adaptation is embedded in described the first through hole, described seal is offered the second through hole, described cathode is contained in described anode casing inner chamber, described cathode comprises main part, cathode emission body structure and cathode collector bar, described cathode emission body structure comprises multiple support portion and electron emission layers that are uniformly distributed on described main part outer wall, described support portion comprises the first surface that is oppositely arranged and second, the first surface of described support portion is the cambered surface of mid portion projection, described electron emission layer is covered on the first surface of described support portion, described electron emission layer is for divergent bundle, described anode casing is used for receiving described electron beam and is luminous, second of described support portion fixedly fits on described main part, described cathode collector bar is located at described main part outer wall, and extend along the direction away from described cathode, and adaptation is embedded in described the second through hole, between described anode casing and described cathode, it is enclosed cavity.
Wherein, the main part of described cathode comprises cathode carrier and cathode layer, and described cathode layer is covered in the outer wall of described cathode carrier outer wall and described cathode collector bar, and second of described support portion fixedly fits on described cathode layer.
Wherein, described cathode carrier figure axisymmetricly, the material of described cathode carrier is insulator, the material of described support portion is electric conductor.
Wherein, described electron emission layer is the nano wire film that grows in the first surface of described support portion.
Wherein, the material of described electron emission layer is carbon nano-tube film, and described cathode carrier is spheroid or symmetrical platy structure, and the material of described cathode carrier is glass or pottery, described support portion is hemisphere or semielliptical shape, and the material of described support portion is stainless steel, copper or aluminium.
Wherein, described anode casing comprises anode carrier, anode layer, fluorescence coating and reflector from outside to inside successively, described anode layer is covered in the inwall of described anode carrier, described fluorescence coating is covered in the inwall of described anode layer, described reflector is covered in described fluorescence coating inwall, the shape of described anode carrier and described cathode matches, and anode layer is using as anode electrode, with the described cathode collector bar external voltage that is connected described in the surface coverage of described the first through hole.
Wherein, the material of described anode carrier is clear glass or pottery.
Wherein, described field emission light source also comprises blast pipe, and described seal is also offered third through-hole, and the first end adaptation of described blast pipe runs through described third through-hole, and extend along the direction near described cathode, the second end of described blast pipe extends along the direction away from described anode casing.
Wherein, described seal is insulating material, and described seal is cylindrical shape.
Wherein, the vacuum degree of described enclosed cavity is 1 × 10
-5pa.
The described field emission light source that the embodiment of the present invention provides, adopt the second face of multiple described support portions to be bonded on described cathode layer, the first surface of described support portion be the cambered surface of mid portion projection and at described support portion first surface continuous distribution nano wire film using the structure as electron emission layer.Thereby electron beam is disperseed, and transmitting at a certain angle, lighting area and the brightness of described field emission light source increased.In addition, this structure also strengthened described field emission light source stability, extended the life-span, optimized service behaviour.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the field emission light source that provides of the embodiment of the present invention;
Fig. 2 is the structural representation of the cathode that provides of another embodiment of the present invention;
Fig. 3 is the section of structure of the cathode emitter that provides of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Below with reference to accompanying drawing, embodiments of the invention are described.Referring to Fig. 1, it is the structural representation of a kind of field emission light source 100 of the present invention.Described field emission light source 100 comprises anode casing 1, seal 2 and cathode 3.
Described cathode 3 comprises main part 31, cathode emission body structure 32 and cathode collector bar 33.
Described main part 31 comprises cathode carrier 311 and cathode layer 312.Described cathode carrier 311 figure axisymmetricly, the material of described cathode carrier 311 is insulator, concrete glass or the pottery of can be.Described cathode layer 312 is covered in described cathode carrier 311 outer walls.In present embodiment, described cathode carrier 311 is the circular spheroid of glass, and on described glass spheres surface, splash-proofing sputtering metal layer is using as described cathode layer 312.In other embodiments, referring to Fig. 2, described cathode carrier 311 can be symmetrical platy structure, platy structure as symmetrical in circular arc or elliposoidal spheroid.
Referring to Fig. 3, described cathode emission structure 32 comprises multiple support portions 321, described support portion 321 comprises the first surface that is oppositely arranged and second, the first surface of described support portion 321 is the cambered surface of mid portion projection, second of described support portion 321 fixedly fits on described cathode layer 312, and described support portion 321 is electric conductor.In present embodiment, second of described support portion 321 through bonding the fitting on described cathode layer 312 of silver slurry.Described support portion 321 is hemisphere or semielliptical shape, and material is stainless steel.And described support portion 321 is multiple, evenly sticks on described cathode layer 312.In other embodiments, described support portion 321 can be and also can adopt other conductive material, material as good in the conductivity such as copper, aluminium.
Described cathode emission body structure 32 also comprises multiple electron emission layers 322 that are uniformly distributed on described main part 31 outer walls, and the surface of described electron emission layer 322 is the cambered surface of mid portion projection.In present embodiment, described electron emission layer 322 is covered on the first surface of described support portion 321, and described electron emission layer 322 is for divergent bundle.Described electron emission layer 322 is the nano wire film that grows in the first surface of described support portion 321.The material of described electron emission layer 322 is carbon nano-tube film.Adopt thermal vapor deposition method carbon nano-tube film on the surface of described support portion 321.In other embodiments, can adopt the method applying or grow to make the surface of described electron emission layer 322 be the cambered surface of mid portion projection.
Refer to Fig. 1, described cathode collector bar 33 is located at described main part 31 outer walls, and extends along the direction away from described cathode 3.The surface of described cathode collector bar 33 also applies described cathode layer 312, for connecting external voltage, thereby drives described field emission light source 100 luminous.
Described anode casing 1 is offered the first through hole (not indicating in figure), with accommodating described seal 2.Described cathode 3 is contained in described anode casing 1 inner chamber, and described anode casing 1 is luminous for receiving described electron beam.Described anode casing 1 comprises anode carrier 11, anode layer 12, fluorescence coating 13 and reflector 14 from outside to inside successively.Described anode layer 12 is covered in the inwall of described anode carrier 11, and described fluorescence coating 13 is covered in the inwall of described anode layer 12, and described reflector 14 is covered in described fluorescence coating 13 inwalls, and described reflector 14 is for increasing the light emission rate of described field emission light source 100.Described anode carrier 11 matches with the shape of described cathode 3, and the material of described anode carrier 11 is clear glass or pottery.Described in the surface coverage of described the first through hole, anode layer 12 is using lead-in wire as anode electrode, with described cathode collector bar 33 external voltage that is connected.In present embodiment, described anode carrier 11 is spherical or elliposoidal glass cell-shell, at described anode carrier 11 inwall sputtered metal films or tin indium oxide as described anode layer 12, then on described anode layer 12, apply fluorescent material using as fluorescence coating 13, finally on described fluorescence coating 13 splash-proofing sputtering metal layer using as reflector 14.In other embodiments, described anode carrier 11 matches with the shape of described cathode 311.In the time that described cathode 3 is circular arc platy structure or elliposoidal spheroid, described anode carrier 11 is circular arc platy structure, elliposoidal spheroid or circular spheroid accordingly.
Described seal 2 adaptations are embedded in described the first through hole, and to seal described anode casing 1, making between described anode casing 1 and described cathode 3 is enclosed cavity, and the vacuum degree of described enclosed cavity is 1 × 10
-5pa, to avoid polluting or poisoning described electron emitter layer 322 and fluorescence coating 13.
Described seal 2 is offered the second through hole (not indicating in figure), described cathode collector bar 33 edges are away from described cathode 3, direction near described anode casing 1 is extended, until adaptation is embedded in described the second through hole, to reach fixing described cathode collector bar 33, isolate described cathode electrode and described anode electrode, seal the object of described enclosed cavity.
In present embodiment, described seal 2 is insulating material, and concrete is pottery, and described seal 2 is cylindrical shape.In other embodiments, described seal 2 can adopt other insulating material, as glass, dry wood or plastics.
Described field emission light source 100 also comprises blast pipe 4, described seal 2 is also offered third through-hole (not indicating in figure), first end 41 adaptations of described blast pipe 4 run through described third through-hole, and extend along the direction near described cathode 3, the second end 42 of described blast pipe 4 extends along the direction away from described anode casing 1, so that described field emission light source 100 is carried out to extraction gas disposal, the vacuum degree that makes described enclosed cavity is 1 × 10
-5pa.
The principle of described field emission light source 100 is, described anode casing 1 applies a positive voltage, and described cathode 3 ground connection, to make described electron emission layer 322 surface distributed compared with highfield.Described electron emission layer 322 is launched electron beam under tunnel effect, and bombards the fluorescence coating 13 on described anode casing 1, excites described fluorescence coating 13 and luminous.
The field emission light source 100 that the embodiment of the present invention provides, adopt the second face of multiple described support portions 321 to be bonded on described cathode layer 312, the first surface of described support portion 321 is the cambered surface of mid portion projection, and at described support portion 321 first surface continuous distribution nano wire films using the structure as electron emission layer 322.Thereby electron beam is disperseed, and transmitting at a certain angle, lighting area and the brightness of described field emission light source 100 increased.In addition, this structure also strengthened described field emission light source 100 stability, extended the life-span, optimized service behaviour.
Above-described execution mode, does not form the restriction to this technical scheme protection range.The amendment done within any spirit at above-mentioned execution mode and principle, be equal to and replace and improvement etc., within all should being included in the protection range of this technical scheme.
Claims (10)
1. a field emission light source, it is characterized in that, comprise anode casing, seal and cathode, described anode casing is offered the first through hole, described seal adaptation is embedded in described the first through hole, described seal is offered the second through hole, described cathode is contained in described anode casing inner chamber, described cathode comprises main part, cathode emission body structure and cathode collector bar, described cathode emission body structure comprises multiple support portion and electron emission layers that are uniformly distributed on described main part outer wall, described support portion comprises the first surface that is oppositely arranged and second, the first surface of described support portion is the cambered surface of mid portion projection, described electron emission layer is covered on the first surface of described support portion, described electron emission layer is for divergent bundle, described anode casing is used for receiving described electron beam and is luminous, second of described support portion fixedly fits on described main part, described cathode collector bar is located at described main part outer wall, and extend along the direction away from described cathode, and adaptation is embedded in described the second through hole, between described anode casing and described cathode, it is enclosed cavity.
2. a kind of field emission light source as claimed in claim 1, it is characterized in that, the main part of described cathode comprises cathode carrier and cathode layer, and described cathode layer is covered in the outer wall of described cathode carrier outer wall and described cathode collector bar, and second of described support portion fixedly fits on described cathode layer.
3. a kind of field emission light source as claimed in claim 2, is characterized in that, described cathode carrier figure axisymmetricly, and the material of described cathode carrier is insulator, the material of described support portion is electric conductor.
4. a kind of field emission light source as claimed in claim 1, is characterized in that, described electron emission layer is the nano wire film that grows in the first surface of described support portion.
5. a kind of field emission light source as claimed in claim 4, it is characterized in that, the material of described electron emission layer is carbon nano-tube film, described cathode carrier is spheroid or symmetrical platy structure, the material of described cathode carrier is glass or pottery, described support portion is hemisphere or semielliptical shape, and the material of described support portion is stainless steel, copper or aluminium.
6. a kind of field emission light source as claimed in claim 1, it is characterized in that, described anode casing comprises anode carrier, anode layer, fluorescence coating and reflector from outside to inside successively, described anode layer is covered in the inwall of described anode carrier, described fluorescence coating is covered in the inwall of described anode layer, described reflector is covered in described fluorescence coating inwall, the shape of described anode carrier and described cathode matches, described in the surface coverage of described the first through hole, anode layer is using as anode electrode, with the described cathode collector bar external voltage that is connected.
7. a kind of field emission light source as claimed in claim 6, is characterized in that, the material of described anode carrier is clear glass or pottery.
8. a kind of field emission light source as claimed in claim 1, it is characterized in that, described field emission light source also comprises blast pipe, described seal is also offered third through-hole, the first end adaptation of described blast pipe runs through described third through-hole, and extend along the direction near described cathode, the second end of described blast pipe extends along the direction away from described anode casing.
9. a kind of field emission light source as claimed in claim 1, is characterized in that, described seal is insulating material, and described seal is cylindrical shape.
10. a kind of field emission light source as claimed in claim 1, is characterized in that, the vacuum degree of described enclosed cavity is 1 × 10
-5pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310033635.7A CN103972031A (en) | 2013-01-29 | 2013-01-29 | Field emission light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310033635.7A CN103972031A (en) | 2013-01-29 | 2013-01-29 | Field emission light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103972031A true CN103972031A (en) | 2014-08-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310033635.7A Pending CN103972031A (en) | 2013-01-29 | 2013-01-29 | Field emission light source |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004095430A (en) * | 2002-09-02 | 2004-03-25 | Matsushita Electric Ind Co Ltd | Field emission element and its manufacturing method |
| US20060151774A1 (en) * | 2005-01-07 | 2006-07-13 | Samsung Electro-Mechanics Co., Ltd. | Field emitter array and method for manufacturing the same |
| KR100777113B1 (en) * | 2006-12-07 | 2007-11-19 | 한국전자통신연구원 | The fine patternable cnt emitter manufacturing method of with high reliability |
| CN101383264A (en) * | 2007-09-07 | 2009-03-11 | 清华大学 | Field emission light source |
-
2013
- 2013-01-29 CN CN201310033635.7A patent/CN103972031A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004095430A (en) * | 2002-09-02 | 2004-03-25 | Matsushita Electric Ind Co Ltd | Field emission element and its manufacturing method |
| US20060151774A1 (en) * | 2005-01-07 | 2006-07-13 | Samsung Electro-Mechanics Co., Ltd. | Field emitter array and method for manufacturing the same |
| KR100777113B1 (en) * | 2006-12-07 | 2007-11-19 | 한국전자통신연구원 | The fine patternable cnt emitter manufacturing method of with high reliability |
| CN101383264A (en) * | 2007-09-07 | 2009-03-11 | 清华大学 | Field emission light source |
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Application publication date: 20140806 |