CN103951410B - A kind of BiFeO 3the preparation method of film - Google Patents

A kind of BiFeO 3the preparation method of film Download PDF

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CN103951410B
CN103951410B CN201410179693.5A CN201410179693A CN103951410B CN 103951410 B CN103951410 B CN 103951410B CN 201410179693 A CN201410179693 A CN 201410179693A CN 103951410 B CN103951410 B CN 103951410B
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film
solution
bifeo
acetic acid
glacial acetic
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CN103951410A (en
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范素华
张丰庆
王翠娟
郭晓冬
解肖斌
董蓬超
王营营
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Shandong Womens University
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Abstract

The present invention discloses a kind of BiFeO 3the preparation method of film.Raw material is Fe (NO 3) 39H 2o and Bi (NO 3) 35H 2o, mol ratio is 1:1.1, solvent is glacial acetic acid and ethylene glycol, volume ratio is 1:1, sequestrant is methyl ethyl diketone, and the volume ratio of the consumption of methyl ethyl diketone and glacial acetic acid, ethylene glycol is (1 ~ 4): 1:1, and part is thanomin, the consumption of thanomin and the volume ratio of glacial acetic acid are (0.01 ~ 0.04): 1, and the concentration of gained precursor solution is 0.2 ~ 0.4 mol/L; Present invention also offers BiFeO 3the preparation method of film.BiFeO prepared by sol-gel method of the present invention 3film has the following advantages: precursor solution stable performance, and preparation technology is simple, and equipment cost is low, is beneficial to large-scale industrial production, is easy to the bismuth ferrite thin film preparing surperficial even compact, and does not have dephasign to generate in preparation process.

Description

A kind of BiFeO 3the preparation method of film
Technical field
The present invention relates to a kind of preparation method of ferroelectric function film, be specifically related to a kind of BiFeO 3the preparation method of film, belongs to perovskite structure environmental harmony Ferroelectric thin film technique field.
Background technology
Bismuth ferrite (BiFeO 3, BFO) and belong to the one of multi-iron material, having ferroelectricity and antiferromagnetism, is one of focus of current multi-iron material research.Its ferroelectrie Curie temperature is 830 DEG C, and antiferromagnetic Neel temperature is 370 DEG C, therefore at room temperature has multiferroic, has broad application prospects in fields such as ferroelectric memory, magnetoelectric transducer and spin electric devices.
Sol-gel method belongs to the one that inorganic-liquid is combined to, presoma is made exactly with metal inorganic substance or metal alkoxide, by these raw material Homogeneous phase mixing under liquid phase, and be hydrolyzed, condensation chemical reaction, form stable vitreosol system in the solution, colloidal sol forms the gel of three-dimensional space network structure through ageing, and the product of different shape made by the gel again technical process such as drying and thermal treatment.The method prepares film, and to have stoichiometric ratio easy to control, and thermal treatment temp is low, and cost is low and be easy to the advantages such as big area film forming, is widely used in research in recent years.BiFeO is prepared at sol-gel method 3in the process of film, the quality of precursor solution quality is the deciding factor affecting the final performance of film, if stable precursor solution can not be made, attempt merely to improve film quality from preparation technology aspect and produce little effect, therefore prepared by BiFeO to sol-gel method 3precursor liquid in film carries out improvement and is very important.
Summary of the invention
The present invention is directed to sol-gel method and prepare BiFeO 3problems existing and defect in film, provide a kind of BiFeO 3the preparation method of film, film obtained by this method does not have dephasign, and even structure is fine and close, and the rectangular degree of ferroelectric hysteresis loop is higher, and residual polarization is comparatively large, and ferroelectric properties is more excellent.
A kind of BiFeO of the present invention 3the feature of the preparation method of film is: raw material is Fe (NO 3) 39H 2o and Bi (NO 3) 35H 2o, mol ratio is 1:1.1, solvent is glacial acetic acid and ethylene glycol, volume ratio is 1:1, sequestrant is methyl ethyl diketone, the consumption of methyl ethyl diketone be itself and glacial acetic acid and ethylene glycol volume ratio be (1 ~ 4): 1:1, part is thanomin, the consumption of thanomin is the volume ratio of itself and glacial acetic acid is (0.01 ~ 0.04): 1, and the concentration of gained precursor solution is 0.2mol/L ~ 0.4 mol/L.
As a preferred embodiment of the present invention, the consumption of described methyl ethyl diketone be itself and glacial acetic acid and ethylene glycol volume ratio be 2:1:1, the consumption of described thanomin is the volume ratio of itself and glacial acetic acid is 0.01:1, and the concentration of described precursor solution is 0.3mol/L.
A kind of BiFeO of the present invention 3the preparation method of film, is characterized in that: comprise the following steps:
Step 1: the preparation of precursor solution: with Bismuth trinitrate Bi (NO 3) 35H 2o and iron nitrate Fe (NO 3) 39H 2o is raw material, and with ethylene glycol and glacial acetic acid for solvent, being sequestrant with methyl ethyl diketone, take thanomin as part, according to BiFeO 3stoichiometric ratio accurately takes Fe (NO 3) 39H 2o and Bi (NO 3) 35H 2o powder, wherein Bi (NO 3) 35H 2o need have suitably excessive, be dissolved in the mixed solution of glacial acetic acid and ethylene glycol after both are mixed, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, add appropriate part thanomin again, the pH value of regulator solution is between 1 ~ 2, mixed solution is at room temperature stirred 12 hours, the solution that final formation is certain density, even, transparent, stable, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: the pre-treatment of substrate: by ITO/glass substrate successively with each ultrasonic cleaning of acetone, dehydrated alcohol and deionized water 15 minutes to remove some organic pollutant and particle contamination, after having cleaned, the moisture on substrate is got rid of with sol evenning machine, then the hot plate being placed in 250 DEG C dries 180s, finally put into quick anneal oven pre-treatment 180 seconds under 450 DEG C of conditions, to remove the unrelieved stress existed in substrate material, the substrate handled well is placed in clean culture dish, notes keeping dry and cleaning;
Step 3: the preparation of film: precursor solution step 1 obtained utilizes sol evenning machine spin-coating to the substrate surface of step 2 gained, film terminates the rear hot plate being placed in 250 DEG C is fast dried, time is 60s, film after oven dry is put into quick anneal oven anneal, annealing process is first at 350 DEG C of pre-treatment 180s, 450 DEG C of insulation 60s, then at 550 DEG C of annealing 300s;
Step 4: repeating step 3 until obtain needed for film thickness after, obtained film is moved back 1200s 550 DEG C of ends in quick anneal oven.
In above-mentioned preparation method, for making up the volatilization of Bi under high temperature, Bi (NO 3) 35H 2o calculates by excessive 10mol%.
In above-mentioned preparation method, the even glue speed of sol evenning machine is 3000r/min, and spin coating time is 30s, and the film thickness after each even glue is 80nm.
BiFeO prepared by sol-gel method of the present invention 3film has the following advantages: precursor solution stable performance, and preparation technology is simple, and equipment cost is low, is beneficial to large-scale industrial production, is easy to the bismuth ferrite thin film preparing surperficial even compact, and does not have dephasign to generate in preparation process.
Accompanying drawing explanation
Fig. 1 is the XRD figure of the embodiment of the present invention 1 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity;
Fig. 2 is the XRD figure of the embodiment of the present invention 2 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity;
Fig. 3 is the ferroelectric hysteresis loop schematic diagram of the embodiment of the present invention 2 gained sample, and wherein X-coordinate is strength of electric field, kilovolt/square centimeter, and ordinate zou is polarizability, microcoulomb/square centimeter;
Fig. 4 is the scanning electron microscope image of the embodiment of the present invention 2 gained sample, and magnification is 50000;
Fig. 5 is the XRD figure of the embodiment of the present invention 3 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity;
Fig. 6 is the XRD figure of the embodiment of the present invention 4 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity;
Fig. 7 is the XRD figure of the embodiment of the present invention 5 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity;
Fig. 8 is the XRD figure of the embodiment of the present invention 6 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity;
Fig. 9 is the XRD figure of the embodiment of the present invention 7 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity;
Figure 10 is the XRD figure of the embodiment of the present invention 8 gained sample, and wherein X-coordinate is diffraction angle 2 θ, and ordinate zou is diffracted intensity.
Embodiment
Embodiment 1
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 1:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.01:1, the pH value of regulator solution is 1, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.3 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: ITO/glass substrate is cut into 2cm × 2cm specification, successively with each ultrasonic cleaning of acetone, dehydrated alcohol and deionized water 15 minutes to remove some organic pollutant and particle contamination, after having cleaned, the moisture on substrate is got rid of with sol evenning machine, then the hot plate being placed in 250 DEG C dries 180s, finally put into quick anneal oven at 450 DEG C of pre-treatment 180s, remove the unrelieved stress existed in substrate material, the substrate handled well is placed in clean culture dish, notes keeping dry;
Step 3: precursor solution step 2 obtained utilizes sol evenning machine spin-coating to the substrate surface of step 1 gained, even glue speed is 3000r/min, spin coating time is 30s, film terminates the rear hot plate being placed in 250 DEG C is fast dried, time is 60s, the film after oven dry is put into quick anneal oven and anneals, and annealing process is first at 350 DEG C of pre-treatment 180s, 450 DEG C of insulation 60s, then at 550 DEG C of annealing 300s;
Step 4: repeating step 3 until obtain needed for film thickness after, obtained film is moved back 1200s 550 DEG C of ends in quick anneal oven.
As Fig. 1, through x-ray diffractometer (German Brooker, D8) to the BiFeO obtained under the present embodiment condition 3film carries out structured testing, and the crystalline property prepared by discovery is good, and crystal phase structure is better, does not find dephasign.
Embodiment 2
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 2:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.01:1, the pH value of regulator solution is 1, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.3 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: consistent with the step 2 in embodiment 1.
Step 3: consistent with the step 3 in embodiment 1.
Step 4: consistent with the step 4 in embodiment 1.
As Fig. 2, through x-ray diffractometer (German Brooker, D8) to the BiFeO obtained under the present embodiment condition 3film carries out structured testing, and the crystalline property prepared by discovery is good, and crystal phase structure is good, does not find dephasign.Utilize ferroelectric test macro (Precision Pro. Radiant Technologies) to gained BiFeO 3the ferroelectric hysteresis loop of film characterizes, and as shown in Figure 3, find that the rectangular degree of ferroelectric hysteresis loop is higher, residual polarization (2Pr) can reach 74 μ C/cm 2.Fig. 4 is for utilizing scanning electron microscope to gained BiFeO 3the sign of the film surface appearance that film carries out, the film surface flat smooth as can be seen from the figure prepared, does not observe tiny crack and pore, and the membrane structure even compact of preparation is described, grain size is more even.Above test result shows, prepared BiFeO 3film has excellent crystalline structure and surface topography, and ferroelectric properties is better.
Embodiment 3
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 3:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.01:1, the pH value of regulator solution is 1, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.3 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: consistent with the step 2 in embodiment 1.
Step 3: consistent with the step 3 in embodiment 1.
Step 4: consistent with the step 4 in embodiment 1.
As can be seen from Figure 5, gained BiFeO 3film crystal structure is good, and does not occur dephasign in film.
Embodiment 4
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 4:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.01:1, the pH value of regulator solution is 1, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.3 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: consistent with the step 2 in embodiment 1.
Step 3: consistent with the step 3 in embodiment 1.
Step 4: consistent with the step 4 in embodiment 1.
As can be seen from Figure 6, gained BiFeO 3film crystal structure is good, and does not occur dephasign in film.
Embodiment 5
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 2:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.01:1, the pH value of regulator solution is 1, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.2 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: consistent with the step 2 in embodiment 1.
Step 3: consistent with the step 3 in embodiment 1.
Step 4: consistent with the step 4 in embodiment 1.
As can be seen from Figure 7, gained BiFeO 3film crystal structure is good, and does not occur dephasign in film.
Embodiment 6
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 2:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.01:1, the pH value of regulator solution is 1, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.4 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: consistent with the step 2 in embodiment 1.
Step 3: consistent with the step 3 in embodiment 1.
Step 4: consistent with the step 4 in embodiment 1.
As can be seen from Figure 8, gained BiFeO 3film crystal structure is good, and does not occur dephasign in film.
Embodiment 7
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 2:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.025:1, the pH value of regulator solution is 1.5, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.3 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: consistent with the step 2 in embodiment 1.
Step 3: consistent with the step 3 in embodiment 1.
Step 4: consistent with the step 4 in embodiment 1.
As can be seen from Figure 9, gained BiFeO 3film crystal structure is good, and does not occur dephasign in film.
Embodiment 8
Step 1: according to BiFeO 3stoichiometric ratio accurately takes the Fe (NO that mol ratio is 1:1.1 3) 39H 2o and Bi (NO 3) 35H 2o powder, the glacial acetic acid that volume ratio is 1:1 is dissolved in after both being mixed, in the mixed solution of ethylene glycol, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then sequestrant methyl ethyl diketone is added in the solution, methyl ethyl diketone and glacial acetic acid, the volume ratio of ethylene glycol is 2:1:1, add part thanomin again, the volume ratio of thanomin and glacial acetic acid is 0.04:1, the pH value of regulator solution is 2, mixed solution is at room temperature stirred 12 hours, final formation is even, transparent, stable solution, strength of solution is 0.3 mol/L, by gained solution at 25 DEG C aging 24 hours, obtain required precursor solution.
Step 2: consistent with the step 2 in embodiment 1.
Step 3: consistent with the step 3 in embodiment 1.
Step 4: consistent with the step 4 in embodiment 1.
As can be seen from Figure 10, gained BiFeO 3film crystal structure is good, and does not occur dephasign in film.
The foregoing is only one embodiment of the present invention, it not whole or unique embodiment, the conversion of those of ordinary skill in the art by reading specification sheets of the present invention to any equivalence that technical solution of the present invention is taked, is claim of the present invention and contains.

Claims (3)

1. a BiFeO 3the preparation method of film, is characterized in that: raw material is Fe (NO 3) 39H 2o and Bi (NO 3) 35H 2o, mol ratio is 1:1.1, solvent is glacial acetic acid and ethylene glycol, volume ratio is 1:1, sequestrant is methyl ethyl diketone, and the volume ratio of the consumption of methyl ethyl diketone and glacial acetic acid, ethylene glycol is (1 ~ 4): 1:1, and part is thanomin, the consumption of thanomin and the volume ratio of glacial acetic acid are (0.01 ~ 0.04): 1, and the concentration of gained precursor solution is 0.2 ~ 0.4 mol/L;
This BiFeO 3the preparation method of film comprises the following steps:
Step 1: the preparation of precursor solution: according to BiFeO 3stoichiometric ratio accurately takes Fe (NO 3) 39H 2o and Bi (NO 3) 35H 2o powder, wherein Bi (NO 3) 35H 2o need have suitably excessive, be dissolved in the mixed solution of glacial acetic acid and ethylene glycol after both are mixed, at room temperature dissolve completely up to powder with magnetic stirrer 8 is little, then add sequestrant methyl ethyl diketone in the solution, then add appropriate part thanomin, the pH value of regulator solution is between 1 ~ 2, mixed solution is at room temperature stirred 12 hours, the certain density solution of final formation, by gained solution at 25 DEG C aging 24 hours, obtains required precursor solution;
Step 2: the pre-treatment of substrate: ITO/glass substrate is used successively each ultrasonic cleaning of acetone, dehydrated alcohol and deionized water 15 minutes, after having cleaned, the moisture on substrate is got rid of with sol evenning machine, then the hot plate being placed in 250 DEG C dries 180s, finally put into quick anneal oven pre-treatment 180 seconds under 450 DEG C of conditions, keep dry and clean;
Step 3: the preparation of film: precursor solution step 1 obtained utilizes sol evenning machine spin-coating to the substrate surface of step 2 gained, film terminates the rear hot plate being placed in 250 DEG C is fast dried, time is 60s, film after oven dry is put into quick anneal oven anneal, annealing process is first at 350 DEG C of pre-treatment 180s, then 450 DEG C of insulation 60s, finally at 550 DEG C of annealing 300s;
Step 4: repeating step 3 until obtain needed for film thickness after, obtained film is moved back 1200s 550 DEG C of ends in quick anneal oven.
2. a kind of BiFeO according to claim 1 3the preparation method of film, is characterized in that: the consumption of described methyl ethyl diketone be itself and glacial acetic acid and ethylene glycol volume ratio be 2:1:1, the consumption of described thanomin is the volume ratio of itself and glacial acetic acid is 0.01:1, and the concentration of described precursor solution is 0.3mol/L.
3. a kind of BiFeO according to claim 1 3the preparation method of film, is characterized in that: in the preparation of film, and the even glue speed of sol evenning machine is 3000r/min, and spin coating time is 30s, and the film thickness after each even glue is 80nm.
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CN104193316B (en) * 2014-08-21 2017-02-15 中国科学院上海硅酸盐研究所 Yttrium iron garnet film and preparation method thereof
CN105399339B (en) * 2015-12-18 2018-12-11 北京汽车股份有限公司 A kind of ferrous acid bismuth-based thin films and preparation method thereof containing doped chemical
RU2616305C1 (en) * 2015-12-30 2017-04-14 федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" Method for bismuth ferrite transparent nanoscale films production
CN106111482B (en) * 2016-08-09 2020-02-14 南京邮电大学 Method for preparing bismuth ferrite film by blade coating
CN106967979B (en) * 2017-04-14 2019-04-09 中国计量大学 A kind of modified BiFeO of phosphoric acid cobalt catalyst3Film photoelectric electrode and preparation method thereof
CN109012685B (en) * 2018-09-20 2020-08-14 山东建筑大学 BiFeO3And Bi2WO6Preparation method of composite film
CN109023313B (en) * 2018-09-20 2020-06-19 山东建筑大学 BiFeO is improved3Annealing method for film magnetoelectric coupling effect

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
俞圣雯等.溶胶-凝胶方法制备铁酸铋薄膜及膜厚的影响.《上海大学学报(自然科学版)》.2008,第14卷(第5期),第509-513页. *
无机盐-螯合-凝胶法制备的铁酸铋薄膜的工艺研究;李佳等;《功能材料》;20081231;第39卷(第5期);第821-823页 *

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Inventor after: Dong Pengchao

Inventor after: Wang Yingying

Inventor before: Fan Suhua

Inventor before: Wang Cuijuan

Inventor before: Zhang Fengqing

Inventor before: Guo Xiaodong

Inventor before: Jie Xiaobin

Inventor before: Dong Pengchao

Inventor before: Wang Yingying

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