CN103944522B - Power amplifier - Google Patents
Power amplifier Download PDFInfo
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- CN103944522B CN103944522B CN201410188575.0A CN201410188575A CN103944522B CN 103944522 B CN103944522 B CN 103944522B CN 201410188575 A CN201410188575 A CN 201410188575A CN 103944522 B CN103944522 B CN 103944522B
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- transistor
- power amplifier
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- resistance
- resistor
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Abstract
A kind of power amplifier is disclosed, including：First resistor, choke induction and the first transistor being connected in series between power end and ground；The input coupling circuit being connected between the input terminal of power amplifier and the grid of the first transistor；And it is connected to the output coupling circuit between the output terminal of power amplifier and choke induction and the first intermediate node of the first transistor, wherein, the power amplifier further includes the biasing circuit being connected with the grid of the first transistor so that the operating point of the first transistor follows the change of supply voltage.The power amplifier can reduce the resistance to pressure request of the first transistor, and the first transistor is caused to be substantially equal to the half of supply voltage in the DC component of the output signal of the first intermediate node, to ensure the output power of power amplifier, and reliability and the linearity can be improved.
Description
Technical field
The present invention relates to electronic circuit, more particularly to power amplifier.
Background technology
Power amplifier is typically used as audio-frequency amplifier and radio frequency amplifier, for producing power output with driving load.
In radio frequency applications field, power amplifier is necessary module, and signal is amplified before signal is launched, and then can be incited somebody to action
The signal of amplification is coupled to antenna.
Classify by the operating mode of power amplifier, power amplifier can be divided into A classes, B classes, AB classes, C classes, D classes, E classes
Deng.The species of power amplifier is different, and the voltage waveform that it is exported is also different.The amplitude of the output waveform of power amplifier may
Reach 2~4 times of supply voltage, thus it requires the pressure-resistant supply voltage that should also be of power transistor in power amplifier
2-4 times.
For some consumer electronics products, when using battery, supply voltage may change in a wide range.In full electricity
When, supply voltage can reach 7V or higher.However, when battery runs low, supply voltage can drop to a 2V left sides
It is right.In order to adapt to the mains voltage variations of wide scope, it is necessary to pressure-resistant parameter according to maximum mains voltage design power transistor.
However, it is a difficult thing to require working frequency height and high pressure at the same time on common process.Using more advanced technique then
Cost can be increased, and be unfavorable for integrating.
On the other hand, it is usually fixed in use due to load.If mains voltage variations scope is big, can also
So that the load off-target load value of power amplifier.As a result output power may be reduced, and cause the line of power output
Property degree be deteriorated.
Therefore, it is desirable to reduce the resistance to pressure request of the power transistor in power amplifier and improve the linear of power output
Degree.
The content of the invention
It is an object of the invention to provide it is a kind of can be with the power amplifier of expansion of power supply voltage range.
According to the present invention, there is provided a kind of power amplifier, including：The first electricity being connected in series between power end and ground
Resistance, choke induction and the first transistor；The input being connected between the input terminal of power amplifier and the grid of the first transistor
Termination power；And it is connected between the output terminal of power amplifier and choke induction and the first intermediate node of the first transistor
Output coupling circuit, wherein, the power amplifier further includes the biasing circuit being connected with the grid of the first transistor, makes
The operating point for obtaining the first transistor follows the change of supply voltage.
Preferably, in the power amplifier, the biasing circuit includes：It is connected in series between feeder ear and ground
Second resistance and second transistor, the second intermediate node between second resistance and second transistor produce detection voltage；Even
It is connected to the 3rd resistor of the grid of second transistor；It is connected to the 4th resistance of the grid of the first transistor；And operation amplifier
Device, its in-phase end receive detection voltage, its end of oppisite phase receives reference voltage, its output terminal is connected to the second crystalline substance via 3rd resistor
The grid of body pipe, and it is connected to via the 4th resistance the grid of the first transistor.Preferably, in the power amplifier,
The reference voltage is the half of supply voltage.Preferably, in the power amplifier, the first transistor and second transistor
Conduction type it is identical.Preferably, in the power amplifier, the resistance value of first resistor and the breadth length ratio of the first transistor
Product, equal to second resistance resistance value and second transistor breadth length ratio product
Preferably, in the power amplifier, the biasing circuit includes：It is connected in series between feeder ear and ground
Second resistance and second transistor；And it is connected to the 3rd electricity between the grid of the first transistor and the grid of second transistor
Resistance, wherein, the grid of second transistor is additionally coupled to the intermediate node of second resistance and second transistor, and the first transistor
Current mirror is formed with second transistor, current mirror adjusts the operating point of the first transistor so that the voltage drop in first resistor is begun
The half of supply voltage is substantially equal to eventually.Preferably, in the power amplifier, the first transistor and second transistor are led
Electric type is identical.Preferably, in the power amplifier, the resistance value of first resistor and the breadth length ratio of the first transistor multiply
Product, equal to second resistance resistance value and second transistor breadth length ratio product 1/2.
Preferably, in the power amplifier, the input coupling circuit includes capacitance.
Preferably, in the power amplifier, the output coupling circuit includes capacitance and load matched resistance
At least one of.
Preferably, in the power amplifier, the output coupling circuit includes matched filtering circuit.
In the power amplifier of the present invention, due to the effect of above-mentioned biasing circuit, in choke induction and the first transistor
The intermediate node signal that produces amplification DC component it is related to supply voltage, and be substantially equal to the one of supply voltage all the time
Half.The resistance to pressure request of the first transistor reduces.The operating point of the power amplifier can follow the change of supply voltage, so as to
To ensure the output power of power amplifier, and improve reliability and the linearity.
Brief description of the drawings
By the description to the embodiment of the present invention referring to the drawings, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings：
Fig. 1 is the schematic circuit according to the power amplifier of the prior art；
Fig. 2 is the exemplary waveform diagrams according to the power amplifier of the prior art；
Fig. 3 is the schematic block diagram according to the power amplifier of the embodiment of the present invention；
Fig. 4 is the first example according to the power amplifier of the embodiment of the present invention；And
Fig. 5 is the second example according to the power amplifier of the embodiment of the present invention.
Embodiment
Hereinafter reference will be made to the drawings is more fully described various embodiments of the present invention.In various figures, identical element
Represented using same or similar reference numeral.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.
Fig. 1 is the schematic circuit according to the power amplifier of the prior art.The power amplifier includes being connected in series
The first transistor M1 and choke induction L1, the input coupling circuit that is electrically connected with the grid of the first transistor M1 and be connected
Output coupling circuit on the intermediate node of the first transistor M1 and choke induction L1.
Input coupling circuit is for example including between the input terminal for being connected to power amplifier and the grid of the first transistor M1
The first capacitance C1.The grid of the first transistor M1 is also connected with biasing resistor R0.Bias voltage Vb is via biasing resistor R0
It is applied on the grid of the first transistor M1, for setting the operating point of the first transistor M1.Output coupling circuit can include
The second capacitance C2, the matched filtering circuit being connected between the first transistor M1 and the intermediate node and output terminal of choke induction L1
The 101 and load matched resistance RL that is connected between output terminal and ground.First capacitance C1 and the second capacitance C2 play partition
The effect of direct current.
Fig. 2 is the exemplary waveform diagrams according to the power amplifier of the prior art.At work, the input of power amplifier
End receives ac input signal Vin.The signal VA of amplification is produced in the intermediate node of the first transistor M1 and choke induction L1.
In the case of the first transistor M1 is N-type MOSFET, the drain electrode of the intermediate node, that is, the first transistor M1.According to the first transistor
The bias state of M1, the output signal VA of the first transistor M1 include DC component VCCA.Direct current is removed by the second capacitance C2
Component VCCA, produces and the corresponding alternating current output signal VOUT of ac input signal Vin in the output terminal of power amplifier.
At work, when the power amplifier is in static state, Vin is equal to 0.Due to choke induction L1 internal resistance very
Small, signal VA is substantially the direct current signal that amplitude is VCCA, and VCCA is substantially equal to supply voltage VCC.And when Vin is big
When 0, signal VA is the AC signal for including DC component VCCA.According to the difference of bias voltage Vb, at the first transistor M1
In different operating points.The ceiling voltage of the drain electrode of the first transistor M1 can reach 2~4 times of VCC.This requires first crystal
The pressure-resistant of the drain electrode of pipe M1 is 2~4 times of supply voltage..
On the basis of the power amplifier of the prior art shown in Fig. 1, it has been suggested that solve the first transistor M1's
A kind of scheme of pressure-resistant problem is one resistance of concatenation between choke induction L1 and power supply.Due to the partial pressure of the series resistor,
The DC component of the output signal VA of one transistor M1 will be less than supply voltage VCC, so as to reduce the resistance to of the first transistor M1
Pressure request.However, the size of DC current of the voltage drop to being flowed through in the first transistor M1 on series resistor is related.Work as power supply
When voltage VCC declines, the DC component of the output signal VA of the first transistor M1 can be significantly lower than VCC/2.As a result, first
Transistor M1 is possible to enter linear zone when static state, so that power amplifier cisco unity malfunction.
Fig. 3 is the schematic block diagram according to the power amplifier of the embodiment of the present invention.With shown in Fig. 1 according to existing skill
The power amplifier of art is similar, and power amplifier of the invention includes choke induction L1 and the first transistor M1 and first crystal
The input coupling circuit and be connected on the intermediate node of the first transistor M1 and choke induction L1 that the grid of pipe M1 is electrically connected
Output coupling circuit.The power amplifier further includes be connected in series as described above between choke induction L1 and power supply
One resistance R1, to reduce the resistance to pressure request of the first transistor M1.
Input coupling circuit is for example including between the input terminal for being connected to power amplifier and the grid of the first transistor M1
The first capacitance C1.Output coupling circuit can include being connected to the intermediate node of the first transistor M1 and choke induction L1 with it is defeated
The second capacitance C2, matched filtering circuit 101 and the load matched resistance being connected between output terminal and ground between outlet
RL.First capacitance C1 and the second capacitance C2 plays the role of separating direct current.
It is with the difference of the power amplifier according to prior art shown in Fig. 1, power amplifier of the invention
Including biasing circuit 102, to substitute biasing resistor R0.Biasing circuit 102 is connected in series in feeder ear and the first transistor M1's
Between grid.At work, biasing circuit 102 detects supply voltage VCC, and produces bias voltage Vb and be applied to first crystal
On the grid of pipe M1, for setting the operating point of the first transistor M1 so that voltage drop on first resistor R1 is all the time substantially etc.
In the half of supply voltage VCC.That is, the DC component of the output signal VA of the first transistor M1 is approximately equal to VCC/2 all the time.
Fig. 4 is the first example according to the power amplifier of the embodiment of the present invention.
As shown in figure 4, the second resistance R2 and second that biasing circuit 102 includes being connected in series between feeder ear and ground is brilliant
Body pipe M2.Detection voltage VA2 is produced in the intermediate node of second resistance R2 and second transistor M2.Detection voltage VA2 is provided
To the in-phase end of operational amplifier U1, and reference voltage VREF=VCC/2 is provided to the end of oppisite phase of operational amplifier U1.Fortune
The output terminal for calculating amplifier U1 is connected to the grid of second transistor M2 via 3rd resistor R3, is connected to via the 4th resistance R4
The grid of the first transistor M1, provides gate bias voltage, to set it to second transistor M2 and the first transistor M1 respectively
Operating point.
The first transistor M1 and second transistor M2 is the transistor of identical conduction type.In an example, first is brilliant
Body pipe M1 and second transistor M2 is N-type MOSFET.Select the resistance value of first resistor R1 and second resistance R2 so that first
The product of the resistance value of resistance R1 and the breadth length ratio of the first transistor M1, resistance value and second transistor equal to second resistance R2
The product of the breadth length ratio of M2.
At work, biasing circuit adjusts the work of the first transistor M1 and second transistor M2 according to supply voltage VCC
Point.The gate source voltage of the first transistor M1 is identical with the gate source voltage of second transistor M2.In the work model of second transistor M2
In enclosing, the feedback control loop provided by operational amplifier U1, can control the quiescent current in second transistor M2, so that accordingly
The quiescent current of ground control the first transistor M1.No matter how supply voltage VCC changes, and operational amplifier U1 is in a feedback manner
Adjust the first transistor M1 and second transistor M2 so that voltage drop on first resistor R1 and second resistance R2 is all the time substantially etc.
In the half of supply voltage VCC.The DC component of the output signal VA of the first transistor M1 is approximately equal to VCC/2 all the time.
Fig. 5 is the second example according to the power amplifier of the embodiment of the present invention.
As shown in figure 5, the second resistance R2 and second that biasing circuit 102 includes being connected in series between feeder ear and ground is brilliant
Body pipe M2.The grid of second transistor M2 is connected to the grid of the first transistor M1, and the second crystal via 3rd resistor R3
The grid of pipe M2 is additionally coupled to the intermediate node of second resistance R2 and second transistor M2.
The first transistor M1 and second transistor M2 is the transistor of identical conduction type.In an example, first is brilliant
Body pipe M1 and second transistor M2 is N-type MOSFET.Select the resistance value of first resistor R1 and second resistance R2 so that first
The product of the resistance value of resistance R1 and the breadth length ratio of the first transistor M1, resistance value and second transistor equal to second resistance R2
The 1/2 of the product of the breadth length ratio of M2.
At work, the grid of second transistor M1 is connected to supply voltage VCC via second resistance R2, so as to locate all the time
In saturation state.The gate source voltage of the first transistor M1 is identical with the gate source voltage of second transistor M2, so as to form current mirror.
The ratio between the quiescent current flowed through on the first transistor M1 and second transistor M2 I1/I2, equal to two transistors breadth length ratio it
Than K, i.e. I1/I2=K.Since the source-drain voltage on second transistor M2 is equal to gate source voltage, second resistance R2 both ends
Voltage is approximately supply voltage VCC (wherein, have ignored the grid voltage on second transistor M2).Flowed through on second transistor M2
Quiescent current be approximately I2=VCC/R2.Correspondingly, the quiescent current flowed through on the first transistor M1 is approximately I1=K*I2
=K*VCC/R2.So as to the voltage drop VR1=I1*R1=K*VCC*R1/R2 on first resistor R1.
Due to the product of the resistance value and the breadth length ratio of the first transistor M1 of first resistor R1, equal to the electricity of second resistance R2
Resistance value and the 1/2 of the product of the breadth length ratio of second transistor M2, therefore, the voltage drop VR1=VCC/2 on first resistor R1.Nothing
How to change by supply voltage VCC, power supply mirror adjusts the operating point of the first transistor M2 so that the voltage on first resistor R1
Drop is substantially equal to the half of supply voltage VCC all the time.The DC component of the output signal VA of the first transistor M1 is approximately equal to all the time
VCC/2。
Due to the effect of above-mentioned biasing circuit, in the power amplifier of the present invention, in the first transistor M1 and chokes electricity
The DC component for the output signal VA that the intermediate node for feeling L1 produces the first transistor M1 is related to supply voltage and big all the time
Cause the half equal to supply voltage VCC.When power amplifier works under normal supply voltage, the first transistor M1 is born
Voltage can be reduced to original half.When decreasing below the half of primary power voltage with supply voltage VCC, first is brilliant
The operating point of body pipe M1 still can follow the change of supply voltage VCC, so as to ensure the output power of power amplifier,
And improve reliability and the linearity.
In the above-described embodiment, the conduction type of each transistor is described.However, in the example of replacement, first
It can be opposite conduction type with each in second transistor, correspondingly, need to exchange it in the circuit of Figure 4 and 5
Source electrode and the position of drain electrode.
According to the embodiment of the present invention as described above, these embodiments do not have all details of detailed descriptionthe, not yet
It is only the specific embodiment to limit the invention.Obviously, as described above, can make many modifications and variations.This explanation
Book is chosen and specifically describes these embodiments, is in order to preferably explain the principle of the present invention and practical application, so that affiliated
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The protection model of the present invention
The scope that the claims in the present invention are defined should be subject to by enclosing.
Claims (17)
1. a kind of power amplifier, including：
First resistor, choke induction and the first transistor being sequentially connected in series between power end and ground；
The input coupling circuit being connected between the input terminal of power amplifier and the grid of the first transistor；And
The output coupling being connected between the output terminal of power amplifier and choke induction and the first intermediate node of the first transistor
Close circuit,
Wherein, the power amplifier further includes the biasing circuit being connected between power end and the grid of the first transistor,
The biasing circuit produces bias voltage and is applied on the grid of the first transistor so that the voltage drop of first resistor
The change of supply voltage is followed, so that the operating point of the first transistor follows the change of supply voltage,
Wherein, the biasing circuit includes：
The second resistance and second transistor being connected in series between feeder ear and ground, between second resistance and second transistor
The second intermediate node produce detection voltage；
It is connected to the 3rd resistor of the grid of second transistor；
It is connected to the 4th resistance of the grid of the first transistor；And
Operational amplifier, its in-phase end receive detection voltage, its end of oppisite phase receives reference voltage, its output terminal is via 3rd resistor
The grid of second transistor is connected to, and the grid of the first transistor is connected to via the 4th resistance,
Wherein, operational amplifier adjusts the operating point of the first transistor and second transistor in a feedback manner.
2. power amplifier according to claim 1, wherein, the operating point of the first transistor is arranged so that in first
The DC component of the output signal of intermediate node is substantially equal to the half of supply voltage.
3. power amplifier according to claim 1, wherein, the voltage drop in first resistor and second resistance is all the time substantially
Equal to the half of supply voltage.
4. power amplifier according to claim 3, wherein, the reference voltage is the half of supply voltage.
5. power amplifier according to claim 3, wherein, the conduction type phase of the first transistor and second transistor
Together.
6. power amplifier according to claim 3, wherein, the resistance value of first resistor and the breadth length ratio of the first transistor
Product, equal to second resistance resistance value and second transistor breadth length ratio product.
7. power amplifier according to claim 1, wherein, the input coupling circuit includes capacitance.
8. power amplifier according to claim 1, wherein, the output coupling circuit includes capacitance and load
With at least one of resistance.
9. power amplifier according to claim 1, wherein, the output coupling circuit includes matched filtering circuit.
10. a kind of power amplifier, including：
First resistor, choke induction and the first transistor being sequentially connected in series between power end and ground；
The input coupling circuit being connected between the input terminal of power amplifier and the grid of the first transistor；And
The output coupling being connected between the output terminal of power amplifier and choke induction and the first intermediate node of the first transistor
Close circuit,
Wherein, the power amplifier further includes the biasing circuit being connected between power end and the grid of the first transistor,
The biasing circuit produces bias voltage and is applied on the grid of the first transistor so that the voltage drop of first resistor
The change of supply voltage is followed, so that the operating point of the first transistor follows the change of supply voltage,
Wherein, the biasing circuit includes：
The second resistance and second transistor being connected in series between feeder ear and ground；And
The 3rd resistor being connected between the grid of the first transistor and the grid of second transistor,
Wherein, the grid of second transistor is additionally coupled to the intermediate node of second resistance and second transistor, and first crystal
Pipe and second transistor form current mirror,
Current mirror adjusts the operating point of the first transistor.
11. power amplifier according to claim 10, wherein, the operating point of the first transistor is arranged so that first
The DC component of the output signal of intermediate node is substantially equal to the half of supply voltage.
12. power amplifier according to claim 10, wherein, the voltage drop in first resistor is substantially equal to power supply all the time
The half of voltage.
13. power amplifier according to claim 10, wherein, the conduction type phase of the first transistor and second transistor
Together.
14. power amplifier according to claim 10, wherein, the resistance value of first resistor and the width of the first transistor are long
The product of ratio, equal to second resistance resistance value and second transistor breadth length ratio product 1/2.
15. power amplifier according to claim 10, wherein, the input coupling circuit includes capacitance.
16. power amplifier according to claim 10, wherein, the output coupling circuit includes capacitance and load
At least one of build-out resistor.
17. power amplifier according to claim 10, wherein, the output coupling circuit includes matched filtering circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410188575.0A CN103944522B (en) | 2014-05-06 | 2014-05-06 | Power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410188575.0A CN103944522B (en) | 2014-05-06 | 2014-05-06 | Power amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103944522A CN103944522A (en) | 2014-07-23 |
| CN103944522B true CN103944522B (en) | 2018-05-11 |
Family
ID=51192042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410188575.0A Expired - Fee Related CN103944522B (en) | 2014-05-06 | 2014-05-06 | Power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103944522B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017208729A (en) * | 2016-05-19 | 2017-11-24 | 株式会社村田製作所 | Power amplification module |
| CN207283501U (en) * | 2017-10-12 | 2018-04-27 | 宁波德晶元科技有限公司 | A kind of inverse E class power amplification circuits |
| CN113131879B (en) * | 2019-12-31 | 2022-08-16 | 圣邦微电子（北京）股份有限公司 | Amplifier for switching body bias and follower |
| CN113268103A (en) * | 2021-04-27 | 2021-08-17 | 上海萍生微电子科技有限公司 | Current mirror circuit and radio frequency module thereof |
| CN113411054B (en) * | 2021-08-19 | 2021-11-19 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier and output 1dB compression point dynamic adjusting circuit thereof |
-
2014
- 2014-05-06 CN CN201410188575.0A patent/CN103944522B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN103944522A (en) | 2014-07-23 |
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Granted publication date: 20180511 Termination date: 20200506 |