CN103943629B - Tft阵列基板、显示面板和显示装置 - Google Patents

Tft阵列基板、显示面板和显示装置 Download PDF

Info

Publication number
CN103943629B
CN103943629B CN201310712762.XA CN201310712762A CN103943629B CN 103943629 B CN103943629 B CN 103943629B CN 201310712762 A CN201310712762 A CN 201310712762A CN 103943629 B CN103943629 B CN 103943629B
Authority
CN
China
Prior art keywords
array substrate
tft array
perforate
electrode
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310712762.XA
Other languages
English (en)
Other versions
CN103943629A (zh
Inventor
乐琴
沈柏平
叶岩溪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianma Microelectronics Co Ltd
Xiamen Tianma Microelectronics Co Ltd
Original Assignee
Tianma Microelectronics Co Ltd
Xiamen Tianma Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianma Microelectronics Co Ltd, Xiamen Tianma Microelectronics Co Ltd filed Critical Tianma Microelectronics Co Ltd
Priority to CN201310712762.XA priority Critical patent/CN103943629B/zh
Priority to US14/300,670 priority patent/US9281321B2/en
Priority to DE102014108297.4A priority patent/DE102014108297B4/de
Publication of CN103943629A publication Critical patent/CN103943629A/zh
Application granted granted Critical
Publication of CN103943629B publication Critical patent/CN103943629B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13373—Disclination line; Reverse tilt
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/128—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode field shaping

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种TFT阵列基板，包括第一电极层；以及层叠于所述第一电极层下方的第二电极层；其中，所述第一电极层包括条形第一电极，第二电极层为片状电极，所述条形第一电极包括弯曲部，所述第二电极层包括至少一个开孔，所述开孔位于所述弯曲部的下方。本发明的TFT阵列基板通过在第二电极层上设置开孔，并设置开孔位于第一电极的弯曲部的下方，可以达到以下至少一个效果：减少条形第一电极的弯曲部和第二电极层之间的交叠面积，从而减少条形第一电极的弯曲部与第二电极层交叠处的电场对液晶配向的影响，而达到减少黑色筹线的效果，及提高基板制备的良率，提高了显示品质。

Description

TFT阵列基板、显示面板和显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT阵列基板、显示面板和显示装置。
背景技术
目前，平板显示器，如液晶显示器(Liquid Crystal Display，LCD)和有机发光显示器(Organic Light Emit Display，OLED)等，由于其具有体积小、重量轻、厚度薄、功耗低、无辐射等特点，在当前的平板显示器市场中占据了主导地位。在成像过程中，平板显示器中每一像素点都由集成在阵列基板中的薄膜晶体管(Thin Film Transistor，TFT)来驱动，再配合外围驱动电路，实现图像显示，TFT是控制发光的开关，是实现液晶显示器LCD和有机发光显示器OLED大尺寸化的关键，直接关系到高性能平板显示器的发展方向。在实际产品中发现，有些液晶显示器在白画面下，出现了黑色筹线这一显示缺陷，而随着对产品和显示效果的要求越来越高，如何快速消除黑色筹线成为了本领域技术人员亟待解决的问题。
发明内容
有鉴于此，本发明提供一种TFT阵列基板、显示面板和显示装置。
一种TFT阵列基板，包括第一电极层；以及层叠于所述第一电极层下方的第二电极层；其中，所述第一电极层包括条形第一电极，第二电极层为片状电极，所述条形第一电极包括弯曲部，所述第二电极层包括至少一个开孔，所述开孔位于所述弯曲部的下方。
相应的，本发明还提供一种显示面板，包括如上所述的TFT阵列基板；彩膜基板，与所述TFT阵列基板相对设置，以及液晶层，位于所述TFT阵列基板和彩膜基板之间。
相应的，本发明还提供一种显示装置，包括如上所述的显示面板。
与现有技术相比，本发明具有如下突出的优点之一：
本发明的TFT阵列基板、显示面板和显示装置，通过在第二电极层上设置开孔，并设置开孔位于第一电极的弯曲部的下方，可以达到以下至少一个效果：减少条形第一电极的弯曲部和第二电极层之间的的交叠面积，从而减少条形第一电极的弯曲部与第二电极层交叠处的电场对液晶配向的影响，而达到减少黑色筹线的效果，及提高基板制备的良率，提高了显示品质。
附图说明
图1是本发明一实施例的TFT阵列基板的一种结构示意图；
图2是本发明一实施例第一电极层的一种俯视图；
图3是本发明一实施例第一电极层的另一种俯视图；
图4是本发明一实施例的TFT阵列基板的另一种结构示意图；
图5是本发明一实施例的TFT阵列基板的条形第一电极与开孔的俯视示意图；
图6是本发明又一实施例的TFT阵列基板的一种结构示意图；
图7是本发明一实施例提供的显示面板的结构示意图；
图8本发明一实施例提供的显示装置的结构示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更为明显易懂，下面将结合附图和实施例对本发明做进一步说明。
需要说明的是：
在以下描述中阐述了具体细节以便于充分理解本发明。但是本发明能够以多种不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广。因此本发明不受下面公开的具体实施方式的限制。
本发明实施例的TFT阵列基板可以由非晶硅工艺、低温多晶硅工艺或氧化物工艺制备，其相关的制程可以采用本领域的习知技术，在此不赘述。
如图1所示，本发明实施例一提供一种TFT阵列基板1，包括第一电极层2；以及层叠于所述第一电极层2下方的第二电极层3，第二电极层3为片状电极，即第二电极层3是整面平铺于TFT阵列基板1，以及绝缘层11，位于第一电极层2和第二电极层3之间；其中，如图2所示，所述第一电极层2包括条形第一电极21，每条条形第一电极21间有刻缝22，所述条形第一电极21包括弯曲部211，所述第二电极层3包括至少一个开孔31，所述开孔31位于所述弯曲部211的下方(例如为正下方)，本发明实施例不对每条条形第一电极的弯曲部211的数量做限制，比如，还可以如图3所示，每条条形第一电极包括3个弯曲部211。
进一步的，如图4所示，所述开孔31贯穿于所述第二电极层3。所述开孔31的数量小于等于所述弯曲部211的数量(需要说明的是，本实施例不对开孔31的数量做限制，图4中的开孔31数量为2个仅为举例而非限定，实际工作中，工作人员可以根据实际需求合理设定)。
如图5所示，所述开孔31沿第一方向Y的最大长度y1小于等于所述弯曲部211沿第一方向Y的最大长度y2。如图2和图5所示，所述开孔31沿第二方向X的最大长度x1小于等于相邻两条所述条形第一电极21的间距pitch。所述开孔31沿第一方向Y的长度顺着弯曲部211的开口朝向方向逐渐减小，如图1和图5所示，第一方向Y、第二方向X和第三方向Z在空间上两两互相垂直。
进一步的，所述第一电极层2为像素电极层，所述第二电极层3为公共电极层(即第二电极层3被施加公共电位)；或者，所述第一电极层2为公共电极层(即第一电极层2被施加公共电位)，所述第二电极层3为像素电极层。
本发明实施例一的TFT阵列基板通过在第二电极层3上设置开孔31，并将开孔31设置于条形第一电极21的弯曲部211的正下方，可以达到以下至少一个效果：减少条形第一电极21的弯曲部211和第二电极层3之间的的交叠面积，从而减少条形第一电极21的弯曲部211与第二电极层3交叠处的电场，进而减少条形第一电极21的弯曲部211与第二电极层3交叠处的电场对液晶配向的影响，而达到减少黑色筹线的效果，及提高基板制备的良率，提高了显示品质。
本发明进一步的提供实施例二，本实施例二与实施例一的TFT阵列基板1具有相同的部分不再重述。如图6所示，本实施例中，开孔31不贯穿所述第二电极层3，开孔31朝向所述第一电极层2。
相应的，如图7所示，本发明实施例还提供一种显示面板4，包括TFT阵列基板1和彩膜基板5，彩膜基板5与TFT阵列基板1相对设置；以及液晶层6，位于所述TFT阵列基板1和彩膜基板5之间。其中，TFT阵列基板1采用上述实施例一、二中所述的TFT阵列基板，通常情况下，所述显示面板可以为液晶显示面板。
相应的，如图8所示，本发明实施例还提供一种显示装置7，包括显示面板4，显示面板4采用如上所示的显示面板。显示装置不限于液晶显示装置，通常情况下，所述显示装置可以为液晶显示装置，但是显示装置还可以为有机发光显示装置等。
现有技术中，当手指或压头在显示面板上划动时，面板上出现划痕(即黑色筹线，disclination)，随着时间的推移划痕逐渐消失，划痕在微观上表现为液晶分子出现紊乱配向，导致亮度与未划过的区域不一致；黑色筹线产生的机理是由于当外力按压显示面板时，由于弯曲部与弯曲部下方的第二电极层形成第二方向电场和第三方向电场(如图1和图5所示，第二方向电场平行于第二方向X；第三方向电场平行于第三方向Z，即第三方向电场垂直于整个显示基板)，而第二方向电场和第三方向电场得同时存在导致条形第一电极的弯曲部下方的液晶出现紊乱配向，从而产生黑色筹线，进而扩散到整个像素区域，当外力消除时，液晶无法恢复到初始排列或者恢复缓慢。
而本发明实施例的显示面板和显示装置，通过在第二电极层上设置开孔，并将开孔设置于条形第一电极的弯曲部的正下方，可以达到以下至少一个效果：减少条形第一电极的弯曲部和第二电极层之间的的交叠面积，从而减少条形第一电极的弯曲部与第二电极层交叠处的电场，进而减少条形第一电极的弯曲部与第二电极层交叠处的电场对液晶配向的影响，而达到减少黑色筹线的效果，及提高基板制备的良率，提高了显示品质。
显然，本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

1.一种TFT阵列基板，包括
第一电极层；以及
层叠于所述第一电极层下方的第二电极层；
其中，所述第一电极层包括条形第一电极，第二电极层为片状电极，所述条形第一电极包括弯曲部，所述第二电极层包括至少一个开孔，所述开孔位于所述弯曲部的下方。
2.如权利要求1所述的TFT阵列基板，其特征在于，所述开孔的数量小于等于所述弯曲部的数量。
3.如权利要求1所述的TFT阵列基板，其特征在于，所述开孔贯穿于所述第二电极层。
4.如权利要求1所述的TFT阵列基板，其特征在于，所述开孔不贯穿所述第二电极层。
5.如权利要求4所述的TFT阵列基板，其特征在于，所述开孔朝向所述第一电极层。
6.如权利要求1所述的TFT阵列基板，其特征在于，所述开孔沿第一方向的最大长度小于等于所述弯曲部沿第一方向的最大长度。
7.如权利要求1所述的TFT阵列基板，其特征在于，所述开孔沿第二方向的最大长度小于等于相邻两条所述条形第一电极的间距。
8.如权利要求1所述的TFT阵列基板，其特征在于，所述开孔沿第一方向的长度顺着弯曲部的开口朝向方向逐渐减小。
9.如权利要求1所述的TFT阵列基板，其特征在于，所述第一电极层为像素电极层，所述第二电极层为公共电极层；或者，所述第一电极层为公共电极层，所述第二电极层为像素电极层。
10.一种显示面板，包括：
如权利要求1-9任一项所述的TFT阵列基板；
彩膜基板，与所述TFT阵列基板相对设置；以及
液晶层，位于所述TFT阵列基板和彩膜基板之间。
11.一种显示装置，包括如权利要求10所述的显示面板。
CN201310712762.XA 2013-12-23 2013-12-23 Tft阵列基板、显示面板和显示装置 Active CN103943629B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201310712762.XA CN103943629B (zh) 2013-12-23 2013-12-23 Tft阵列基板、显示面板和显示装置
US14/300,670 US9281321B2 (en) 2013-12-23 2014-06-10 TFT array substrate, display panel and display device
DE102014108297.4A DE102014108297B4 (de) 2013-12-23 2014-06-12 TFT-Arraysubstrat, Anzeigefeld und Anzeigevorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310712762.XA CN103943629B (zh) 2013-12-23 2013-12-23 Tft阵列基板、显示面板和显示装置

Publications (2)

Publication Number Publication Date
CN103943629A CN103943629A (zh) 2014-07-23
CN103943629B true CN103943629B (zh) 2016-09-14

Family

ID=51191222

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310712762.XA Active CN103943629B (zh) 2013-12-23 2013-12-23 Tft阵列基板、显示面板和显示装置

Country Status (3)

Country Link
US (1) US9281321B2 (zh)
CN (1) CN103943629B (zh)
DE (1) DE102014108297B4 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1900781A (zh) * 2005-07-15 2007-01-24 三星电子株式会社 液晶显示器
CN101051134A (zh) * 2006-04-06 2007-10-10 株式会社半导体能源研究所 液晶显示设备、半导体器件和电子设备
CN103309102A (zh) * 2012-03-14 2013-09-18 Nlt科技股份有限公司 横向电场型液晶显示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100354906B1 (ko) * 1999-10-01 2002-09-30 삼성전자 주식회사 광시야각 액정 표시 장치
KR100564218B1 (ko) * 2003-12-11 2006-03-28 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 기판 및 그 제조 방법
KR100595458B1 (ko) * 2004-05-22 2006-07-03 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시소자
JP2007052264A (ja) * 2005-08-18 2007-03-01 Toshiba Matsushita Display Technology Co Ltd 液晶表示パネル
JP5300507B2 (ja) * 2009-01-26 2013-09-25 株式会社ジャパンディスプレイウェスト 液晶表示パネル
CN102243405B (zh) 2010-05-13 2015-09-02 上海天马微电子有限公司 液晶显示面板及其制造方法
US9316859B2 (en) 2011-10-11 2016-04-19 Lg Display Co., Ltd. Liquid crystal display device and method for manufacturing the same
CN102629038B (zh) * 2011-12-15 2014-12-24 京东方科技集团股份有限公司 Tft阵列基板及其制作方法和显示装置
US9360715B2 (en) * 2012-05-10 2016-06-07 Sharp Kabushiki Kaisha Liquid crystal display device
JP2015163908A (ja) * 2012-06-21 2015-09-10 シャープ株式会社 液晶表示装置
US9983441B2 (en) * 2012-10-19 2018-05-29 Merck Patent Gmbh Liquid crystal display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1900781A (zh) * 2005-07-15 2007-01-24 三星电子株式会社 液晶显示器
CN101051134A (zh) * 2006-04-06 2007-10-10 株式会社半导体能源研究所 液晶显示设备、半导体器件和电子设备
CN103309102A (zh) * 2012-03-14 2013-09-18 Nlt科技股份有限公司 横向电场型液晶显示装置

Also Published As

Publication number Publication date
US9281321B2 (en) 2016-03-08
CN103943629A (zh) 2014-07-23
DE102014108297B4 (de) 2021-04-29
DE102014108297A1 (de) 2015-06-25
US20150179667A1 (en) 2015-06-25

Similar Documents

Publication Publication Date Title
CN104517990B (zh) 有机发光二极管显示面板、有机发光二极管显示设备
US20150221712A1 (en) Tiled oled display and manufacturing method thereof
CN104600200B (zh) 一种阵列基板及显示面板
CN103439842B (zh) 像素结构及具有此像素结构的液晶显示面板
US11435636B2 (en) Method of manufacturing liquid crystal display device using first and second photoresists
CN106024839A (zh) 折叠式oled显示器
CN104112758B (zh) 发光二极管显示面板及其制作方法、显示装置
WO2015032144A1 (zh) 液晶显示面板及其驱动方法、显示装置
CN106154639B (zh) 一种液晶显示面板及液晶显示装置
CN105226069A (zh) 一种双面显示面板及双面显示装置
CN103885260A (zh) 显示面板
US20200142536A1 (en) Touch control display panel
CN104020602A (zh) 一种显示器件
WO2016065798A1 (zh) 阵列基板及其制造方法、显示装置
CN105159485A (zh) 触控面板及其制备方法、显示装置
CN102360143A (zh) 液晶显示装置
CN106298809B (zh) 薄膜晶体管阵列基板及其制作方法、液晶显示装置
CN105093606A (zh) 阵列基板、液晶显示面板和液晶显示装置
CN111708237B (zh) 一种阵列基板、显示面板及显示装置
US8466614B2 (en) Front light plate and reflective display apparatus using the same
CN106652815B (zh) 显示面板及显示装置
CN103744224A (zh) 阵列基板及用该阵列基板的液晶显示面板
CN102317995B (zh) 有源矩阵基板和显示装置
CN107632478A (zh) 曲面液晶显示面板
CN103943629B (zh) Tft阵列基板、显示面板和显示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant