CN103941501B - Tft array substrate, display panels and liquid crystal display - Google Patents
Tft array substrate, display panels and liquid crystal display Download PDFInfo
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- CN103941501B CN103941501B CN201310716768.4A CN201310716768A CN103941501B CN 103941501 B CN103941501 B CN 103941501B CN 201310716768 A CN201310716768 A CN 201310716768A CN 103941501 B CN103941501 B CN 103941501B
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Abstract
The invention discloses a kind of tft array substrate, display panels and liquid crystal display, described tft array substrate includes: be positioned at multiple pixel electrodes of described pixel region, each pixel electrode is in the strip bent and is intervally installed, and described pixel region is divided into Liang Gechou district by the kink of the plurality of pixel electrode；The first insulating barrier being arranged on the plurality of pixel electrode；It is arranged on the multiple compensating electrodes on described first insulating barrier and between the plurality of pixel electrode, wherein, being provided with a compensating electrode between each two pixel electrode, described compensating electrode is in the strip of bending, and the bending part of the plurality of compensating electrode is in the junction in said two farmland district.The present invention reduces the area in IPS and the double domain structure of FFS mode to wrong region, improves the display performance of double domain structure, improves the light transmittance of liquid crystal display.
Description
Technical field
The present invention relates to technical field of liquid crystal display, be specifically related to array base-plate structure technical field, especially relate to
And one tft array substrate, display panels and liquid crystal display.
Background technology
IPS(In-Plane Switching, in-plane changes) pattern and FFS(Fringe Field
Switching, fringe field switching) liquid crystal display of pattern provides the liquid crystal device structure of a kind of wide viewing angle
Make, pixel electrode and public electrode are arranged on same substrate, by producing transverse electric field power to change liquid
The optical axis of brilliant molecule deflection within being parallel to base plan is to carry out liquid crystal drive.Wherein, IPS and FFS
Single domain (one domain) technology under pattern is because of the advantage such as its visual angle width, colour cast be little, low in energy consumption and by extensively
General use.But, along with user is more and more higher to the requirement of display screen performance, regard present in single domain technology
The defects such as role is inclined, poor contrast are more and more obvious, and the most double farmlands (two domain) technology is arisen at the historic moment.
Each pixel region is divided into Liang Gechou district, the liquid crystal in Liang Gechou district to mutually compensate for so that liquid crystal by double farmlands technology
Show that the device optical property at big visual angle is well improved.The most double farmlands display screen need not have visual angle and mends
The thick polaroid repaid, it is also possible to meet market for the thinnest requirement of liquid crystal display.
Fig. 1 is the structural representation of double farmlands pixel region of existing liquid crystal display.Double farmlands pixel region 10
Pixel electrode 11 be designed to the strip of bending, thus, it is possible to the zones of different in a pixel region
Produce the electric field that direction is different, so that the liquid crystal molecule on different farmlands turns to different sides in pixel region
To, it is thus achieved that bigger visual angle.
Although existing pair of domain structure has improvement result in terms of visual angle, but there is a defect: at picture
The intersection in Liang Gechou district in element region, the position shown in reference 12 as shown in Figure 1, liquid crystal due to
Contrary at vertical direction amount of force equidirectional by the electric field of the formation of Liang Gechou district pixel electrode, liquid
Crystalline substance cannot rotate, and therefore, it is inclined that the liquid crystal on the position shown in reference 12 can not play change line polarisation
Shake the effect in direction, ultimately result under each GTG in addition to zeroth order gray scale, light source all cannot by upper partially
Mating plate, that is, can produce a black line on the position shown in reference 12.Similar, near handing over
Liquid crystal at boundary is close by the active force of the above-mentioned electrode in Liang Gechou district, and liquid crystal also can be affected, and rotates
Difficulty.Above-mentioned phenomenon is referred to as to wrong (disclination) phenomenon.Figure 2 illustrates existing double
Farmland pixel region to wrong phenomenon, as in figure 2 it is shown, the juncture area in Liang Gechou district has the black of certain area
District (to wrong region), the light transmittance of liquid crystal display declines.
Summary of the invention
The technical problem to be solved is to propose a kind of tft array substrate, display panels and liquid
Crystal display, reduces the area to wrong region in IPS or the double domain structure of FFS mode, improves double domain structure
Display performance, improve the light transmittance of liquid crystal display.
In first aspect, embodiments provide a kind of tft array substrate, including:
Substrate；
The multi-strip scanning line being positioned on described substrate and a plurality of data lines, described multi-strip scanning line and described a plurality of
Multiple pixel regions that data wire intersection limits；
Be positioned at multiple pixel electrodes of described pixel region, each pixel electrode in bending strip and that
This is spaced setting, and described pixel region is divided into Liang Gechou district by the kink of the plurality of pixel electrode；
It is positioned at the public electrode on described substrate；Wherein, described public electrode leads to the plurality of pixel electrode
Cross the first insulating barrier to be electrically insulated；
The second insulating barrier being arranged on the plurality of pixel electrode；
It is arranged on the multiple compensating electrodes on described second insulating barrier and between the plurality of pixel electrode,
Wherein, being provided with a compensating electrode between each two pixel electrode, described compensating electrode is in the bar of bending
Shape, the bending part of the plurality of compensating electrode is in the junction in said two farmland district.
In second aspect, embodiments provide a kind of tft array substrate, it is characterised in that bag
Include:
Substrate；
The multi-strip scanning line being positioned on described substrate and a plurality of data lines, described multi-strip scanning line and described a plurality of
Multiple pixel regions that data wire intersection limits；
Being positioned at multiple pixel electrodes of described pixel region and multiple public electrode, each pixel electrode is with each
Individual public electrode is in the strip bent and is arranged in same layer, and the alternately arranged setting being spaced,
Described pixel region is divided into two farmlands by the kink of the plurality of pixel electrode and the plurality of public electrode
District；
It is arranged on the first insulating barrier on the plurality of pixel electrode and multiple public electrode；
It is arranged on the multiple benefits on described first insulating barrier and between adjacent pixel electrode and public electrode
Repay electrode, wherein, between pixel electrode and public electrode that each two is adjacent, be provided with a compensating electrode,
Described compensating electrode is in the strip of bending, and the bending part of the plurality of compensating electrode is in said two farmland district
Junction.
In the third aspect, embodiments provide a kind of display panels, the most real including the present invention
Execute the color membrane substrates that is oppositely arranged with described tft array substrate of tft array substrate that example provides and be clipped in
Liquid crystal layer between described tft array substrate and described color membrane substrates.
In fourth aspect, embodiments provide a kind of liquid crystal display, arbitrarily implement including the present invention
The display panels that example provides.
The present invention is by arranging a compensating electrode between each two pixel electrode in the double domain structure of FFS
One is arranged between mode, or adjacent pixel electrode and the public electrode of each two in the double domain structure of IPS
The mode of individual compensating electrode, in the plane of pixel electrode and public electrode place substrate, forms one
The plane electric fields of In-Plane, provides a new transverse electric field power for liquid crystal molecule placed on it, promotes
In wrong region, the liquid crystal near intersection rotates, and reduces the double domain structure Zhong Xiangcuo district of IPS or FFS
The area in territory, improves the display performance of double domain structure, improves light transmittance in liquid crystal display.
Accompanying drawing explanation
The detailed description that non-limiting example is made made with reference to the following drawings by reading, the present invention
Other features, objects and advantages will become more apparent upon:
Fig. 1 is the structural representation of double farmlands pixel region of existing liquid crystal display；
Fig. 2 be existing pair of farmland pixel region to wrong phenomenon；
Fig. 3 is the schematic diagram that double farmlands pixel region carries out region division according to liquid crystal rotation situation；
Fig. 4 is the force analysis schematic diagram of the liquid crystal of the intersection in double pixel region Zhong Lianggechou district, farmland；
Fig. 5 is the force analysis signal of the liquid crystal closing on junction region, Liang Gechou district in the pixel region of double farmlands
Figure；
Fig. 6 is the signal of a kind of based on the double domain structure of FFS the tft array substrate of first embodiment of the invention
Figure；
Fig. 7 A is the structural representation of the pixel region of a kind of tft array substrate of first embodiment of the invention；
Fig. 7 B is the structural representation of the pixel region of a kind of tft array substrate of first embodiment of the invention；
Fig. 8 is the pixel region of first embodiment of the invention schematic cross-section in B-B ' direction along Fig. 7 A；
Fig. 9 A is the pixel of a kind of based on the double domain structure of IPS the tft array substrate of second embodiment of the invention
The structural representation in region；
Fig. 9 B is the pixel of a kind of based on the double domain structure of IPS the tft array substrate of second embodiment of the invention
The structural representation in region；
Figure 10 is the pixel region of second embodiment of the invention schematic cross-section in B-B ' direction along Fig. 9 A；
Figure 11 is the structural representation of the pixel region after improving in emulation experiment one based on the embodiment of the present invention
Figure；
Figure 12 be the embodiment of the present invention emulation experiment one in the liquid crystal display of pixel region structure of prior art
Simulation result figure；
Figure 13 present invention be embodiment emulation experiment one in improve after liquid crystal display imitative of pixel regional structure
True result figure；
Figure 14 be the embodiment of the present invention emulation experiment two in improve after liquid crystal display imitative of pixel regional structure
True result figure；
Figure 15 be the embodiment of the present invention emulation experiment three in improve after liquid crystal display imitative of pixel regional structure
True result figure；
Figure 16 A be the embodiment of the present invention emulation experiment four in a kind of improve after the liquid crystal of pixel regional structure
The simulation result figure shown；
Figure 16 B be the embodiment of the present invention emulation experiment four in a kind of improve after the liquid crystal of pixel regional structure
The simulation result figure shown；
Figure 17 A be the embodiment of the present invention emulation experiment five in a kind of improve after the liquid crystal of pixel regional structure
The simulation result figure shown；
Figure 17 B be the embodiment of the present invention emulation experiment five in a kind of improve after the liquid crystal of pixel regional structure
The simulation result figure shown；
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.It is understood that this
Specific embodiment described by place is used only for explaining the present invention, rather than limitation of the invention.The most also need
Be noted that for the ease of describing, accompanying drawing illustrate only part related to the present invention and not all in
Hold, and the size of structure shown in accompanying drawing and size, not actual or proportional to reality knot
The size of structure.
Figure 3 illustrates the signal that according to liquid crystal rotation situation, double farmlands pixel region is carried out region division
Figure.As it is shown on figure 3, according to the rotation situation of liquid crystal, Liang Gechou district can be divided into hand over double farmlands pixel region
At boundary 31, close on the region 32 of Liang Gechou district intersection and normal district 33.Be positioned at the liquid crystal of zones of different because of
Different for stressing conditions, thus rotation situation is different.
Wherein, the stress of the liquid crystal that figure 4 illustrates double pixel region Zhong Lianggechou districts, farmland intersection 31 is divided
Analysis schematic diagram.With reference to Fig. 3 and Fig. 4, the pixel in Liang Gechou district intersection 31, in the pixel region of double farmlands
Electric field Y-direction in Fig. 3 or Fig. 4 that first broken line electrode 41 of electrode and the second broken line electrode 42 are formed
On identical to the active force of liquid crystal 43, but action direction is contrary, therefore in the liquid of Liang Gechou district intersection
Brilliant substantially without rotation.
Accordingly, figure 5 illustrates the force analysis signal of the liquid crystal closing on junction region, Liang Gechou district
Figure.With reference to Fig. 3 and Fig. 5, in the region 32 closing on Liang Gechou district intersection, in the pixel region of double farmlands
The electric field that first broken line electrode 51 of pixel electrode and the second broken line electrode 52 are formed component pair in the Y direction
Although the active force of liquid crystal 53 is incomplete same, but in amount of force closely, liquid crystal is herein
The active force phase that the electric field that one broken line electrode 51 and the second broken line electrode 52 are formed component in the Y direction produces
After offsetting mutually, making a concerted effort of being subject to is the most weak, so being positioned at the liquid crystal rotation closing on junction region, Liang Gechou district
Also difficulty, also there will be black area.
Accordingly, it is positioned at the liquid crystal above the 33 of normal district to exist because of the electric field formed by two broken line electrodes
The active force of the component of Y-direction is mutually far short of what is expected, and the liquid crystal therefore in normal district can be normally carried out rotating.
It can be seen that the liquid crystal in being positioned at the region 32 closing on Liang Gechou district intersection, itself there is rotation and become
Gesture, if the liquid crystal in region 32 applies a transverse electric field power again, is additionally formed the electricity of a Y-direction
Field component, then being positioned at the liquid crystal in region 32 will the most easily rotate, and then can reach to reduce to wrong district
The effect of territory area.
Based on the principle that, The present invention gives following example.
First embodiment
Fig. 6 is the schematic diagram of the tft array substrate based on the double domain structure of FFS of first embodiment of the invention.
As shown in Figure 6, described tft array substrate includes: substrate 61；It is positioned at the multi-strip scanning on described substrate 61
Line 62 and a plurality of data lines 63, described multi-strip scanning line 62 and described a plurality of data lines 63 intersect to form multiple
Pixel region 64.
Wherein, the pixel region of a kind of tft array substrate of first embodiment of the invention is shown in fig. 7
Structural representation.
Show a kind of bar shaped being rule when the pixel electrode in pixel region and compensating electrode in fig. 7
During electrode, the structural representation of the pixel region of tft array substrate.
As shown in Figure 7 A, each pixel region 64 includes the multiple pixels being positioned at described pixel region 64
Electrode 641, each pixel electrode 641 is in the strip bent and is intervally installed, the plurality of pixel electricity
Described pixel region 64 is divided into Liang Gechou district by the kink of pole 641.
In the present embodiment, the kink of described multiple pixel electrodes 641 constitutes the friendship in said two farmland district
Meet place 643.
Described array base palte also includes the public electrode (not shown in Fig. 7 A) being positioned on described substrate；Wherein,
Described public electrode is electrically insulated by the first insulating barrier (not shown in Fig. 7 A) with the plurality of pixel electrode,
Described public electrode can form fringe field (Fringe Field Switching) with described pixel electrode.
It should be noted that described public electrode can be the plane-shape electrode covering pixel region, it is also possible to be and picture
The strip shaped electric poles that element electrode 641 shape is identical, does not limit this；
Described array base palte also includes that the second insulating barrier of being arranged on the plurality of pixel electrode is (in Fig. 7 A not
Illustrate), described second insulating barrier covers the top of the plurality of pixel electrode, and is arranged on described second
Multiple compensating electrodes 642 on insulating barrier and between the plurality of pixel electrode 641, wherein, each two
Being provided with a compensating electrode 642 between pixel electrode 641, compensating electrode 642 is in the strip of bending, described
The bending part of multiple compensating electrodes 642 is in the junction 643 in said two farmland district.
In the present embodiment, by adding one layer in the tft array substrate of the double domain structure of original FFS
New compensating electrode 642, when, after making alive on pixel electrode 641, compensating electrode 642 is due to capacity effect
Certain voltage can be sensed, compensating electrode 642 and then form face internal electric field with pixel electrode 641, it is provided that one
Individual new transverse electric field power, makes the liquid crystal closing in the region 644 of Liang Gechou district intersection 643 be more prone to
Rotate.
Certainly, as long as it will be appreciated by persons skilled in the art that pixel electrode and compensating electrode are in bending
Strip, pixel region 64 can be divided into Liang Gechou district, its shape be not limited to rule strip electricity
Pole, it is also possible to for zigzag strip shaped electric poles, or other are from the electrode macroscopically extended in strip, all may be used
To be interpreted as " strip " electrode of broad sense.
Show in figure 7b and a kind of be zigzag bar when the pixel electrode in pixel region and compensating electrode
During shape electrode, the structural representation of the pixel region of tft array substrate.As shown in Figure 7 B, pixel electrode
741 and compensating electrode 742 be Zigzag electrodes.
Show that the pixel region of first embodiment of the invention cross section in B-B ' direction along Fig. 7 A shows at Fig. 8
It is intended to.
In fig. 8, non-limiting as example, described public electrode may be located at multiple pixel electrode place
Under Ceng, and this public electrode is plane-shape electrode.
As shown in Figure 8, this schematic cross-section includes: glass substrate 81, planar public electrode 82, three
84, two compensating electrodes 86 of pixel electrode, it is deposited between planar public electrode 82 and pixel electrode 84
First insulating barrier 83 and the second insulating barrier 85 being deposited between pixel electrode 84 and compensating electrode 86.
Wherein, pixel electrode 84, public electrode 82 and compensating electrode 86 can be transparency electrode, described
Transparency electrode can pass through indium tin oxide (ITO), indium-zinc oxide (IZO) or the combination of above-mentioned material,
Or other transparent conductive materials manufacture.
In the present embodiment, as shown in Figure 8, the width D 1 of compensating electrode 86 and the width of pixel electrode 84
Between D2, proportionate relationship can arbitrarily be arranged, and not limits this, and alternatively, the width of compensating electrode 86 is
The 60%～100% of described pixel electrode 84 width.
In the present embodiment, as shown in Figure 8, compensating electrode 86 to two adjacent pixel electrodes 84 away from
Can be equal from D3 and D4, it is also possible to unequal, that is, described compensating electrode is to an adjacent pixel
This can not limited by the distance of electrode less than this compensating electrode to the distance of adjacent one other pixel electrode
Fixed.
In the present embodiment, described compensating electrode can also apply certain voltage, is optionally OV voltage,
It can also be provided that floating (Floating), this is not limited.
In one example, also include in described pixel region 64: connect each compensating electrode 642 end
Main electrode (not shown in Fig. 7 A), wherein, described main electrode can be with each compensating electrode 642
In same layer.Described main electrode is by the second insulating barrier 85 in such as Fig. 8 and the first insulating barrier 83
Via (not shown in Fig. 8) be electrical connected with public electrode 82, accordingly, compensating electrode can be applied
0V voltage.
One of the present embodiment preferred embodiment in, the overbending direction of described compensating electrode 642 and institute
The overbending direction stating pixel electrode 641 is identical；The bending angle of described compensating electrode 642 and described pixel electricity
The bending angle of pole 641 is identical.It is true that in order to ensure a preferable compensation effect, as long as described benefit
The shape repaying electrode is consistent with the shape of described electrode, namely when described pixel electrode is the strip of rule
During electrode, the strip of described compensating electrode preferably also rule；When described pixel electrode is zigzag electrode
Time, described compensating electrode is preferably also zigzag electrode, with it is thus possible to obtain a preferable compensation effect.
The present invention is by arranging a compensating electrode between each two pixel electrode in the double domain structure of FFS
Mode, in the plane of pixel electrode and public electrode place substrate, forms a plane electric fields, for being placed in
Liquid crystal molecule thereon provides a new transverse electric field power, promotes the liquid crystal near intersection in wrong region
Rotate, reduce the area to wrong region in the double domain structure of FFS, improve the display of double domain structure
Can, improve light transmittance in liquid crystal display.
Second embodiment
In the present embodiment, tft array substrate is array base palte based on the double domain structure of IPS, wherein, this reality
The array base palte executing example includes:
Substrate；
The multi-strip scanning line being positioned on described substrate and a plurality of data lines, described multi-strip scanning line and described a plurality of
Multiple pixel regions that data wire intersection limits；
Wherein, show in figure 9 a in second embodiment of the invention when the pixel electrode in pixel region and
When compensating electrode is the strip electrode of rule, the knot of the pixel region of array base palte based on the double domain structure of IPS
Structure schematic diagram.
As shown in Figure 9 A, each pixel region includes:
It is positioned at multiple pixel electrodes 91 and multiple public electrode 92 of described pixel region, each pixel electrode
91 and are arranged in same layer in the strip of bending with each public electrode 92, and the alternately row being spaced
Row are arranged, and are used for forming in-plane and change electric field (In-Plane Switching).The plurality of pixel electricity
Described pixel region is divided into Liang Gechou district by the kink of pole 91 and the plurality of public electrode 92；
It is arranged on the first insulating barrier on the plurality of pixel electrode 91 and multiple public electrode 92 (in Fig. 9 A
Not shown)；
It is arranged on described first insulating barrier and between adjacent pixel electrode 91 and public electrode 92
Multiple compensating electrodes 93, wherein, are provided with between pixel electrode 91 and public electrode 92 that each two is adjacent
One compensating electrode 93, described compensating electrode 93 is in the strip of bending, the plurality of compensating electrode 93 curved
Folding part is positioned at the junction in said two farmland district.
" strip " electrode described in the present embodiment also broadly understood in embodiment one.Accordingly, at figure
9B shows in second embodiment of the invention when the pixel electrode in pixel region and compensating electrode are saw
During the strip shaped electric poles of profile of tooth, the structural representation of the pixel region of array base palte based on the double domain structure of IPS.Tool
Body ground is referred to embodiment one for the understanding of " strip " electrode.
The cross section signal of the B-B ' along Fig. 9 A of the pixel region in Figure 10 shows second embodiment of the invention
Figure.As shown in Figure 10, this schematic cross-section includes: glass substrate 161, pixel electrode 162, public
Electrode 163, compensating electrode 164, it is deposited on pixel electrode 162, public electrode 163 and compensating electrode 164
Between the first insulating barrier 165.
The present invention passes through to set between pixel electrode and the public electrode that each two in the double domain structure of IPS is adjacent
Put the mode of a compensating electrode, in the plane of pixel electrode and public electrode place substrate, additionally by mending
Repay electrode and form a plane electric fields, provide a new transverse electric field power for liquid crystal molecule placed on it,
Promote the liquid crystal of close intersection (32 regions in reference to Fig. 3) in wrong region to rotate, reduce
Area to wrong region in the double domain structure of IPS, improves the display performance of double domain structure, improves liquid crystal
Show light transmittance in device.
On the basis of technique scheme, it is preferred that the overbending direction of described compensating electrode and described pixel
Electrode is identical with the overbending direction of described public electrode；The bending angle of described compensating electrode and described pixel electricity
Pole is identical with the bending angle of described public electrode.It practice, the shape of described compensating electrode preferably with institute
State the shape of pixel electrode unanimously.
On the basis of above-mentioned each technical scheme, also include in described pixel region: connect each described compensation
The main electrode of electrode tip, described main electrode can be by the via of described first insulating barrier and described public affairs
Common electrode is electrical connected.
The benefit so arranged is, after each compensating electrode and public electrode being electrical connected by main electrode,
Can be the voltage of each compensating electrode offer OV.
On the basis of above-mentioned each technical scheme, each described compensating electrode voltage could be arranged to floating.
On the basis of above-mentioned each technical scheme, it is preferred that the width of described compensating electrode is described pixel electricity
The 60%～100% of pole width.
The benefit so arranged is, by limiting the proportionate relationship of compensating electrode and pixel electrode width
Fixed, while ensureing industrial easy production, select optimum proportionate relationship to improve to wrong phenomenon
Improvement degree.
On the basis of above-mentioned each technical scheme, described compensating electrode is to adjacent pixel electrode and public electrode
Distance can be equal, it is also possible to unequal.
Accordingly, the embodiment of the present invention also provides for a kind of display panels, including described in the various embodiments described above
The color membrane substrates that is oppositely arranged with described tft array substrate of tft array substrate and be clipped in described TFT
Liquid crystal layer between array base palte and described color membrane substrates.
The display panels that the present embodiment provides, by the double domain structure of FFS pair of domain structure or IPS
Tft array substrate increases the mode of compensating electrode, it is possible at pixel electrode and public electrode place substrate
In plane, form a plane electric fields, provide a new transverse electric field for liquid crystal molecule placed on it
Power, promotes the liquid crystal of close intersection in wrong region to rotate, and then reduces in display panels
The area to wrong region, improve the display performance of double domain structure, improve light in liquid crystal display and wear
Rate thoroughly.
Accordingly, the embodiment of the present invention additionally provides a kind of liquid crystal display, including various embodiments of the present invention institute
The display panels stated.Can also the most as required, described liquid crystal display includes back light unit,
In order to provide light source to described display floater, or comprise miscellaneous part, numerous to list herein.
In the pixel region structure that first embodiment of the invention and the second embodiment propose, the ginseng that can arrange
Number includes: (FFS ties the distance between the width of compensating electrode, compensating electrode to two adjacent pixel electrodes
Structure), or compensating electrode is to the distance (IPS structure) between adjacent pixel electrode and public electrode and benefit
Repay and on electrode, execute alive situation.For above-mentioned variable element, carry out following emulation experiment:
Wherein, so that the array base palte that the embodiment of the present invention provides is the most practical,
In this emulation experiment, first the pixel region structure of existing pair of domain structure is improved:
Double domain structure based on FFS: before improvement, the width Width1=3.75um of pixel electrode, two adjacent
Interval Slit=3.25um between pixel electrode, after improvement, pixel electrodes width adjustment is
Width1=3um, pixel electrodes interval is adjusted to Slit=4um；
Double domain structure based on IPS: before improvement, the width of electrode (pixel electrode and public electrode)
Width1=3.75um, the interval between two adjacent electrodes (pixel electrode and public electrode)
Slit=3.25um, after improvement, above-mentioned electrode width is adjusted to Width1=3um, and above-mentioned electrode gap adjusts
For Slit=4um；
Above-mentioned improvement is equivalent in the case of pixel region size is constant, adds between two adjacent electrodes
Interval.Depositing first insulator layer on electrode after improvement, is positioned at two adjacent electricity on the first insulating barrier
Interpolar every position on compensating electrode is set.
Emulation experiment one
In emulation experiment one, the parameter of pixel region arranges and includes: the width of compensating electrode
Width2=2um, compensating electrode is identical apart from the distance of adjacent two electrodes, namely
Slit1=Slit2=1um.It addition, compensating electrode is set to floating.Figure 11 illustrates above-mentioned improvement
The schematic diagram of rear structure.As shown in figure 11, W1 is the width that width Width1, W2 are compensating electrode of electrode
Degree Width2, compensating electrode is respectively S1 and S2 to the distance of adjacent two electrodes.
The emulation knot of the liquid crystal display of the pixel region structure of prior art in Figure 12 shows emulation experiment one
Fruit figure；Figure 13 illustrates the emulation knot of the liquid crystal display of pixel regional structure after improving in emulation experiment one
Fruit figure.
By simulation result is calculated: the pixel region structure of prior art corresponding to wrong region
Area S=33.4um2, pixel region structure after improving in emulation experiment one corresponding to wrong region area
S=21.0um2.Can significantly observe, of the prior art to wrong black area ratio after improving pixel region structure
It is obviously reduced to wrong region.
Wherein, when showing the different voltage of applying on the pixel electrode in Table 1, the picture of prior art is used
The light penetration of the pixel region structure improved in the light transmittance of element regional structure and use emulation experiment one
The contrast table of rate.
Table 1
As shown in table 1, when the voltage on pixel electrode is more than after 4V, in emulation experiment one light penetration
Rate is greater than the light transmittance of prior art, therefore, by applying suitable voltage on the pixel electrode
Value, uses the pixel region structure in this emulation experiment substantially reducing while wrong peak width,
Strengthen light transmittance.Wherein, when voltage on the pixel electrode is configured to 5V, emulation experiment one obtains
Big light transmittance.
Emulation experiment two
Compensating electrode, on the basis of emulation experiment one, preferably " is set to floating " by this experiment by feature
Being improved as " compensating electrode is set to 0V " further, other conditions are constant.
Namely: the width Width2=2um of compensating electrode, the distance of these two adjacent electrodes of compensating electrode distance
Identical, Slit1=Slit2=1um.
Figure 14 illustrates the simulation result of the liquid crystal display of pixel regional structure after improving in emulation experiment two
Figure.
By simulation result is calculated: in emulation experiment two to wrong region area be 18.1um2,
See by changing the simulation result figure contrast of the liquid crystal display of pixel region structure of dealing with problems arising from an accident with emulation experiment in Figure 13
Go out: compensating electrode is set to 0V and the improvement situation to wrong phenomenon is better than is set to float by compensating electrode
Put.
Wherein, when showing the most differently configured voltage in table 2, use in emulation experiment two
The pixel region structure improved in the light transmittance of the pixel region structure improved and use emulation experiment one
The contrast table of light transmittance.
As shown in table 2, when voltage on the pixel electrode is less than 5V, the LCD penetration of emulation experiment two is little
Light transmittance in emulation experiment one；When voltage on the pixel electrode is more than or equal to 5V, emulation experiment two
Light transmittance be greater than the light transmittance of emulation experiment one.Wherein, voltage on the pixel electrode is joined
When being set to 5V, emulation experiment two obtains the light transmittance of maximum.
Table 2
Emulation experiment three
Emulation experiment three is on the basis of emulation experiment two, preferably by the feature " width of compensating electrode
Width2=2um " it is improved as " the width Width2=3um of compensating electrode ", other conditions are constant, namely:
This compensating electrode is identical apart from the distance of adjacent two electrodes, Slit1=Slit2=0.5um, and compensating electrode sets
It is set to 0V.
Figure 15 illustrates the simulation result of the liquid crystal display of pixel regional structure after improving in emulation experiment three
Figure.
By simulation result is calculated: this emulation experiment to wrong region area be 19.2um2.Logical
After crossing and improving in Figure 14 emulation experiment two, the simulation result figure contrast of the liquid crystal display of pixel regional structure is seen
Go out: during compensating electrode width Width2=2um, the improvement situation to wrong phenomenon is better than compensating electrode width
Width2=3um.Certainly, during compensating electrode width Width2=3um, equally make of the prior art
It is obviously reduced to wrong black area.
Wherein, when showing the most differently configured voltage in table 3, use in emulation experiment three
The pixel region structure improved in the light transmittance of the pixel region structure improved and use emulation experiment two
The contrast table of light transmittance.
As shown in table 3, when voltage on the pixel electrode is less than 5V, the LCD penetration in emulation experiment three
More than or equal to the light transmittance in emulation experiment two；When voltage on the pixel electrode is more than or equal to 5V, imitative
The light transmittance that true experiment is three kinds is less than the light transmittance in emulation experiment two.
Wherein, when voltage on the pixel electrode is configured to 5V, emulation experiment three can obtain the light of maximum
Penetrance.
Table 3
Emulation experiment four
Emulation experiment four is on the basis of emulation experiment two, and preferably by feature, " this compensating electrode is apart from adjacent
The distance of two electrodes is identical " be improved as " this compensating electrode apart from the distance of adjacent left side electrode less than phase
The distance of adjacent the right electrode ", other conditions are constant, namely: the width Width2=2um of compensating electrode,
Compensating electrode is set to 0V.
One of emulation experiment four preferred embodiment in, Slit1=0.5um, Slit2=1.5um；?
Emulation experiment four another preferred embodiment in, Slit1=0um, Slit2=2um.
Figure 16 A show based on Slit1=0.5um, Slit2=1.5um in emulation experiment four, after improvement
The simulation result figure of the liquid crystal display of pixel region structure.
Show based on Slit1=0um, Slit2=2um in emulation experiment four in fig. 16b, pixel after improvement
The simulation result figure of the liquid crystal display of regional structure.
By being calculated simulation result: work as Slit1=0.5um, during Slit2=1.5um, emulation is real
Test four to wrong region area be 18.9m2；Work as Slit1=0um, during Slit2=2um, emulation experiment four to
Wrong region area is 20.1m2.By with Figure 14 emulation experiment two in improve after the liquid crystal of pixel regional structure
The simulation result figure contrast shown is found out: the improvement situation to wrong phenomenon is better than by Slit1=Slit2=1um
Slit1=0.5um, Slit2=1.5um or Slit1=0um, Slit2=2um.Certainly, Slit1=0.5um,
When Slit2=1.5um or Slit1=0um, Slit2=2um, equally make of the prior art black to mistake
District is obviously reduced.
Wherein, when showing the most differently configured voltage in table 4, use in emulation experiment four
The pixel region structure improved in the light transmittance of the pixel region structure improved and use emulation experiment two
The contrast table of light transmittance.
As shown in table 4, emulation experiment four is wanted at Slit1=0.5um, light transmittance during Slit2=1.5um
It is better than the light transmittance of Slit1=Slit2=1um in emulation experiment two, in emulation experiment two
The light transmittance of Slit1=Slit2=1um is better than emulation experiment four at Slit1=0um, during Slit2=2um
Light transmittance.Wherein, when voltage on the pixel electrode is configured to 5V, emulation experiment four can obtain
Maximum light transmittance.
Table 4
Emulation experiment five
Emulation experiment five is on the basis of emulation experiment two, and preferably by feature, " this compensating electrode is apart from adjacent
The distance of two electrodes is identical " be improved as " this compensating electrode apart from the distance of adjacent the right electrode less than phase
The distance of adjacent left side electrode ", other conditions are constant, namely: the width Width2=2um of compensating electrode,
Compensating electrode is set to 0V.
One of emulation experiment five preferred embodiment in, Slit1=1.5um, Slit2=0.5um；?
Emulation experiment five another preferred embodiment in, Slit1=2um, Slit2=0um.
Figure 17 A show based on Slit1=1.5um, Slit2=0.5um in emulation experiment five, after improvement
The simulation result figure of the liquid crystal display of pixel region structure.
Figure 17 B show based on Slit1=2um, Slit2=0um in emulation experiment five, pixel after improvement
The simulation result figure of the liquid crystal display of regional structure.
By being calculated simulation result: work as Slit1=1.5um, during Slit2=0.5um, emulation is real
Test five to wrong region area be 18.0m2, work as Slit1=2um, during Slit2=0um, emulation experiment five to
Wrong region area is 18.3m2.By with Figure 14 emulation experiment two in improve after the liquid crystal of pixel regional structure
The simulation result figure contrast shown is found out: Slit1=1.5um, Slit2=0.5um are to the improvement situation to wrong phenomenon
It is better than Slit1=Slit2=1um；Slit1=2um, Slit2=0um are to poor to the improvement situation of wrong phenomenon
In Slit1=Slit2=1um.Certainly, Slit1=1.5um, Slit2=0.5um or Slit1=2um,
During Slit2=0um, equally make of the prior art to be obviously reduced to wrong black area.
Wherein, when showing the most differently configured voltage in table 5, use in emulation experiment five
The pixel region structure improved in the light transmittance of the pixel region structure improved and use emulation experiment two
The contrast table of light transmittance.
Table 5
As shown in table 5, when the voltage on pixel electrode is less than or equal to 5V, the light penetration of emulation experiment five
Rate is better than the light transmittance of emulation experiment two, it addition, the Slit1=1.5um of emulation experiment five,
Slit2=0.5um, is better than the Slit1=2um of emulation experiment five to the improvement situation to wrong phenomenon,
Slit2=0um.Wherein, when voltage on the pixel electrode is configured to 5V, emulation experiment five can obtain
Big light transmittance.
As long as by above-mentioned emulation experiment it can be seen that each two pixel passed through in the double domain structure of FFS is electric
The mode of one compensating electrode is set between pole, or the pixel that each two in the double domain structure of IPS is adjacent
The mode of one compensating electrode is set between electrode and public electrode, no matter compensating electrode width, compensate electricity
Pole is to the distance between two adjacent electrodes or executes on compensating electrode alive situation is how to arrange
, all can reach the area to wrong region in the double domain structure of reduction IPS or FFS, improve double domain structure
Display performance, improve the technique effect of light transmittance in liquid crystal display.
Wherein, OV voltage on compensating electrode, will be applied, the width of compensating electrode is arranged less than pixel electrode
(or public electrode) width and compensating electrode is set to the distance apart from adjacent the right electrode is less than
During the distance of adjacent left side electrode, the more excellent improvement degree to wrong phenomenon and higher light can be obtained
Line penetrance.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for this area skill
For art personnel, the present invention can have various change and change.All institutes within spirit and principles of the present invention
Any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (16)
1. a tft array substrate, including:
Substrate；
The multi-strip scanning line being positioned on described substrate and a plurality of data lines, described multi-strip scanning line and described a plurality of
Multiple pixel regions that data wire intersection limits；
Be positioned at multiple pixel electrodes of described pixel region, each pixel electrode in bending strip and that
This is spaced setting, and described pixel region is divided into Liang Gechou district by the kink of the plurality of pixel electrode；
It is positioned at the public electrode on described substrate；Wherein, described public electrode leads to the plurality of pixel electrode
Cross the first insulating barrier to be electrically insulated；
The second insulating barrier being arranged on the plurality of pixel electrode；
It is characterized in that, also include: be arranged on described second insulating barrier and be positioned at the plurality of pixel electrode
Between multiple compensating electrodes, wherein, between each two pixel electrode, be provided with a compensating electrode, described
Compensating electrode is in the strip of bending, and the bending part of the plurality of compensating electrode is in the handing-over in said two farmland district
Place.
Tft array substrate the most according to claim 1, it is characterised in that described compensating electrode curved
Folding direction is identical with the overbending direction of described pixel electrode；The bending angle of described compensating electrode and described pixel
The bending angle of electrode is identical.
Tft array substrate the most according to claim 1, it is characterised in that in described pixel region also
Including: connecting the main electrode of each described compensating electrode end, described main electrode is by described first exhausted
Via in edge layer and described second insulating barrier is electrical connected with described public electrode.
Tft array substrate the most according to claim 1, it is characterised in that each described compensating electrode
Voltage is set to floating.
Tft array substrate the most according to claim 1, it is characterised in that the width of described compensating electrode
Degree is the 60%～100% of described pixel electrode width.
Tft array substrate the most according to claim 1, it is characterised in that described compensating electrode is to phase
The distance of two adjacent pixel electrodes is equal.
Tft array substrate the most according to claim 1, it is characterised in that described compensating electrode is to phase
The distance of an adjacent pixel electrode is less than the distance of this compensating electrode to adjacent one other pixel electrode.
8. a tft array substrate, including:
Substrate；
The multi-strip scanning line being positioned on described substrate and a plurality of data lines, described multi-strip scanning line and described a plurality of
Multiple pixel regions that data wire intersection limits；
Being positioned at multiple pixel electrodes of described pixel region and multiple public electrode, each pixel electrode is with each
Individual public electrode is in the strip bent and is arranged in same layer, and the alternately arranged setting being spaced,
Described pixel region is divided into two farmlands by the kink of the plurality of pixel electrode and the plurality of public electrode
District；
It is arranged on the first insulating barrier on the plurality of pixel electrode and multiple public electrode；
It is characterized in that, also include: be arranged on described first insulating barrier and be positioned at adjacent pixel electrode and
Multiple compensating electrodes between public electrode, wherein, between pixel electrode and public electrode that each two is adjacent
Being provided with a compensating electrode, described compensating electrode is in the strip of bending, the bending of the plurality of compensating electrode
Portion is positioned at the junction in said two farmland district.
Tft array substrate the most according to claim 8, it is characterised in that described compensating electrode curved
Folding direction is identical with the overbending direction of described pixel electrode and described public electrode；The bending of described compensating electrode
Angle is identical with the bending angle of described pixel electrode and described public electrode.
Tft array substrate the most according to claim 8, it is characterised in that in described pixel region
Also including: connect the main electrode of each described compensating electrode end, described main electrode passes through described first
The via of insulating barrier is electrical connected with described public electrode.
11. tft array substrates according to claim 8, it is characterised in that each described compensation electricity
Pole tension is set to floating.
12. tft array substrates according to claim 8, it is characterised in that described compensating electrode
Width is the 60%～100% of described pixel electrode width.
13. tft array substrates according to claim 8, it is characterised in that described compensating electrode arrives
Adjacent pixel electrode and the distance of public electrode are equal.
14. tft array substrates according to claim 8, it is characterised in that described compensating electrode arrives
Adjacent pixel electrode and the distance of public electrode are unequal.
15. 1 kinds of display panels, including the tft array substrate as described in claim 1-14 is arbitrary,
The color membrane substrates that is oppositely arranged with described tft array substrate and be clipped in described tft array substrate and described coloured silk
Liquid crystal layer between film substrate.
16. 1 kinds of liquid crystal displays, including display panels as claimed in claim 15.
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| CN104503167A (en) * | 2014-12-31 | 2015-04-08 | 深圳市华星光电技术有限公司 | Liquid crystal display |
| CN105676511A (en) * | 2016-04-01 | 2016-06-15 | 京东方科技集团股份有限公司 | Display panel and driving method thereof as well as display device |
| CN106338864B (en) * | 2016-08-25 | 2023-10-03 | 合肥京东方光电科技有限公司 | Array substrate, driving method, liquid crystal display panel and display device |
| CN107219667B (en) * | 2017-06-26 | 2020-08-25 | 上海天马微电子有限公司 | Curved surface display panel and display device |
| CN109239989B (en) * | 2017-07-11 | 2020-08-25 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN107331315B (en) * | 2017-08-24 | 2019-04-26 | 上海天马微电子有限公司 | A kind of curved-surface display device |
| CN109659327B (en) * | 2019-02-27 | 2021-02-05 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
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