CN103926543A - Magnetic head based on magnetic resistance technology - Google Patents
Magnetic head based on magnetic resistance technology Download PDFInfo
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- CN103926543A CN103926543A CN201410149048.9A CN201410149048A CN103926543A CN 103926543 A CN103926543 A CN 103926543A CN 201410149048 A CN201410149048 A CN 201410149048A CN 103926543 A CN103926543 A CN 103926543A
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Abstract
The invention discloses a magnetic head based on a magnetic resistance technology. The magnetic head comprises at least one or more sensing units and an output pin, wherein the sensing units are the same in magnetic field inducing direction. The sensing units are used for detecting a leakage magnetic field of a magnetic medium; the input end and the output end of the output pin are electrically connected with corresponding ports of the sensor respectively and used for connecting a sensor with a system; sensitive elements of the sensing units are giant magnetic resistance elements or magnetic tunnel junction elements, wherein the giant magnetic resistance elements and the magnetic tunnel junction elements are of a multi-layer film structure with nanoscale thickness, and the each nanoscale multi-layer film structure at least comprises a free layer nanoscale film, a non-magnetic layer nanoscale film and a pinning layer nanoscale film. The sensor has the advantages of being high in sensitivity and precision, small in size, high in signal-to-noise ratio and anti-interference capacity and the like, non-contact measuring is achieved, the magnetic head can be built in a mobile terminal and is suitable for mobile payment, the JitterShift phenomenon is effectively solved, and the magnetic head is suitable for large-scale industrial production.
Description
Technical field
The present invention relates to Magnetic Sensor technical field, particularly a kind of for identifying as the sensor of the medium magnetic such as magnetic card, secret paper, bill and check.
Background technology
In daily life, magnetic medium is widely used in the fields such as magnetic card, secret paper, check.Taking magnetic card as example, its recording medium has following characteristics: (1) magnetic signal is along with the decay of distance is very violent; (2) there are multiple magnetic recording strip, and need information encryption; Meanwhile, owing to such sensor having been proposed to new requirement in the modern life and work, i.e. mobile payment, requires sensor to be built in as in the mobile terminals such as mobile phone.For above feature, need to there is following characteristics for the sensor of identifying medium magnetic medium: the little and antijamming capability of (1) high sensitivity, high precision, high s/n ratio, volume is by force to be applicable to signal measurement and the complicated undesired signal of mobile device of magnetic medium; (2) thus volume want enough little can integrated decoding and encryption chip also can be built in mobile device; (3) power consumption wants enough low to be applicable to the requirement of mobile device; (4) need non-contact detection (being that sensor distance detection faces has certain distance) to be applicable to mobile payment.
Taking POS machine magnetic head as example, the structure of existing magnetic medium recognition category sensor is:
(1) adopting single telefault or multiple telefault array is sensitive element, and sensitivity and precision are very low, do not possess antijamming capability, and power consumption is large, and volume cannot be built in very greatly in mobile device;
(2) while measurement, must closely press close to magnetic card and use, can not noncontact use.
As can be seen from the above, existing sensor cannot meet the modern life and requirements of one's work.
The sensitive element of magnetic sensor has except telefault at present, also has Hall element and anisotropic magnetoresistance element.The sensitivity of Hall element is very low, and volume is large, but is difficult to realize lightening and because poor its measuring accuracy that causes of physical property of itself is also very low.In the application of magnetic card, the stray field of magnetic medium is more intense at dielectric surface, and the saturation field of anisotropic magneto-resistor (being yard) is very low, therefore the stray field of magnetic medium is easy to make anisotropic magnetoresistance element saturated, therefore make it cannot become the sensitive element of media recognition class sensor.
In recent years, with giant magnetoresistance element (Giant Magneto-resistance, and magnetic tunnel junction element (Magnetic Tunnel Junction GMR), MTJ) for the magnetic resistance type sensing element of representative has less volume than existing sensing element, higher precision and sensitivity, better temperature characterisitic and high s/n ratio, due to this technology by pooled applications in technical field of information storage, in the application in other field also in exploring and the small-scale production stage, failing to realize large-scale industrialization produces, simultaneously in reality research and development, due to the lifting of distance between sensor and magnetic medium, there will be Jitter Shift phenomenon, make output signal serious distortion.
Summary of the invention
The object of the invention is to provide one to have high sensitivity for the shortcoming of prior art, high precision, small size, high to-noise ratio, the sensor of the identification magnetic medium that antijamming capability is strong.
The present invention for achieving the above object, adopts following technical scheme:
Based on the magnetic head of magneto-resistor technology, it is characterized in that: pin is drawn in it sensing unit and output that comprises that at least one or more magnetic field induction direction is identical;
Described sensing unit is in order to detect the stray field of magnetic medium;
Input end and output terminal that pin is drawn in described output are electrically connected with the corresponding port of described sensor respectively, in order to sensor is connected with system;
The sensitive element of described sensing unit is giant magnetoresistance element or magnetic tunnel junction element, the multi-layer film structure that described giant magnetoresistance element and magnetic tunnel junction element are nanometer grade thickness, described nano-scale multilayer film structure at least comprises free layer, nonmagnetic layer and three layers of nanoscale film of pinning layer.
It is further characterized in that: described sensing unit is single resistance, half-bridge or full bridge structure.
Further: described half-bridge is for recommending half-bridge, with reference to half-bridge or gradient half-bridge, described full-bridge is for recommending full-bridge, with reference to full-bridge or gradient full-bridge.
Each brachium pontis of above-mentioned half-bridge, full-bridge is made up of one or more magnetic-field-sensitive directions identical giant magnetoresistance element or magnetic tunnel junction element.
The giant magnetoresistance element of above-mentioned gradient full-bridge and all brachium pontis of gradient half-bridge structure or the magnetic-field-sensitive direction of magnetic tunnel junction element are identical, and in full-bridge, two of relative position brachium pontis are arranged in the same position in space, and two brachium pontis of adjacent position are arranged in the diverse location in space.
Its further feature is also: described sensor also comprises circuit module, the corresponding port that the input/output terminal of described circuit module draws pin with sensing unit and output is respectively electrically connected, and described circuit module contains signal amplification unit, noise reduction unit and decoding unit.
Foregoing circuit module also comprises electrostatic prevention unit.
Foregoing circuit module can also comprise ciphering unit for encrypting output signal.
Foregoing circuit module is integrated circuit (IC) chip, and its input end and output terminal are electrically connected with the corresponding port of sensing unit by printed-wiring board (PWB).
Its further feature also has: near described giant magnetoresistance element or magnetic tunnel junction element, be provided with soft magnetic bodies.
The above sensor comprises support, and described support is non-permanent magnetic material, in order to support all parts of described sensor.
The sensor comprises shell, and described shell is non-permanent magnetic material, is coated on the outside of described support, is placed in all parts of the described sensor in support in order to protection.
The present invention is a kind of magnetic medium identification sensor that adopts giant magnetoresistance element or magnetic tunnel junction element, this sensor has high sensitivity, high precision, small size, high to-noise ratio, the feature that antijamming capability is strong, has realized non-cpntact measurement and can be built in mobile terminal, be applicable to mobile payment and effectively solved the Jitter Shift phenomenon running in R&D process, being applicable to large-scale industrialization and producing.
Brief description of the drawings
Fig. 1 is the side view of the magnetic head based on magneto-resistor technology.
Fig. 2 is the vertical view that adopts the magnetic head based on magneto-resistor technology of multiple sensing units.
Fig. 3 is the structural representation of giant magnetoresistance element and magnetic tunnel junction element.
Fig. 4 is the curve of output schematic diagram of giant magnetoresistance element or magnetic tunnel junction element.
Fig. 5 is the series connection schematic diagram of multiple magnetic tunnel junction elements.
Fig. 6 is the series connection schematic diagram of multiple giant magnetoresistance elements.
Fig. 7 is the electrical connection schematic diagram of semibridge system sensing unit.
Fig. 8 is the curve of output schematic diagram of semibridge system sensing unit.
Fig. 9 is the electrical connection schematic diagram of full-bridge type sensing unit.
Figure 10 is the curve of output schematic diagram of full-bridge type sensing unit.
Figure 11 is the physical location figure of the magneto-resistor of gradient full-bridge type sensing unit.
Figure 12 is the electrical connection schematic diagram of the sensing part of multiple sensing units.
Figure 13 is near the schematic diagram that soft magnetic bodies is set MTJ (giant magnetoresistance element).
Embodiment
Below in conjunction with drawings and Examples, summary of the invention of the present invention is further described.
Fig. 1 is the side view of the magnetic head based on magneto-resistor technology that provides of the present embodiment, comprises that sensing unit 11, circuit module 12, shell 13, output draws pin 14, support (not shown) and printed-wiring board (PWB) 15.Sensing unit 11 and circuit module 12 are chip type, by printed-wiring board (PWB) 15, the output terminal of it correspondence and input end are electrically connected.Sensing unit 11 is in order to detect the stray field 32 of magnetic medium 21, and its magnetic-field-sensitive direction is 1.The output signal of sensing unit 11 is drawn pin 14 by output after processing by circuit module 12 and is passed to system use.It is a conceptual description in this article that pin 14 is drawn in output, it is the linkage unit of sensor and system, the output port that it is corresponding with sensor and input port electrical connection, the output port that system is drawn pin by output is accepted data, powers to sensor by its input port.The Main Function of shell 13 is for supporting accommodating sensor element in it, little to materials limitations, non-hard magnetic material.The input end of sensing unit 11 and output terminal are electrically connected with the corresponding port on circuit module 12 respectively, the corresponding port that pin 14 is drawn in output is electrically connected with the corresponding port of circuit module 12, makes system draw input end and the output terminal conducting of pin 14 and sensor by output.
Input end in above-mentioned and output terminal are conceptual description, taking sensing unit as example, can know that by elaborating below input end has V
biaswith two ports of GND; For single resistance or half-bridge, output terminal has V
oUTand V
bias(or GND) two ports; There are V+ and two ports of V-for full-bridge.
Described sensor can be single channel, only contain a sensing unit, also can be to contain multiple sensing units (11a, 11b ... multiple sensor 11n), as shown in Figure 2, wherein circuit module, printed-wiring board (PWB) and output draw pin not in the drawings indicate.
Support described in the present embodiment is a kind of special-shaped structural part, the shape and size of support (not shown) are mated with the shape and size of all parts (comprising one or more sensing units 11, circuit module 12, shell 13 and printed-wiring board (PWB) 15) of sensor respectively, and the inside surface close contact of the outward flange of support and shell 13, for fixing sensing unit 11 and circuit module 12.Support is also provided with through hole, and position and size that the position of this through hole and size are drawn pin 14 with output are respectively mated, and making output draw pin 14 can be through the through hole of support.
Because sensing unit 11 can accurately measure the stray field of magnetic medium, its output signal can directly be used, and therefore circuit module 12 is not necessary structure, and signal is just optimized in its effect.If there is no circuit module 12 in sensor construction, the input and output side that pin 14 is drawn in output is directly connected with the corresponding port of sensing unit 11.Conventionally circuit module 12 contains signal amplification unit, noise reduction unit, decoding (being analog to digital conversion) unit and ESD(electrostatic defending) unit (if needs, this unit neither be necessary), if output signal needs to encrypt, circuit module has ciphering unit.After sensing unit is connected with circuit module, connecting system uses.
Above-mentioned sensing unit 11 is set to be arranged at the direction parallel with magnetic medium detection faces with the optimum of circuit module 12, and the magnetic-field-sensitive direction 1 of sensing unit 11 is parallel to chip surface.Conventionally stray field is larger along the component in media plane direction, therefore adopts this disposing way can increase measuring distance, makes sensor in measurement, allow certain shake, can make sensor more lightening simultaneously.
Fig. 3 is the structural representation of giant magnetoresistance element and magnetic tunnel junction element.As shown in the figure, magnetic tunnel junction element (giant magnetoresistance element) 41 is made up of nanoscale film free layer 51, nonmagnetic layer 52 and pinning layer 53, and between top electrode layer 56 and bottom electrode layer 55, and above-mentioned multi-layer film structure is positioned in substrate 54.For giant magnetoresistance element, top electrode layer 56 and bottom electrode layer 55 also can be positioned at elements on either side, electrode layer 56 and 55 has not been aforesaid top electrode layer and the bottom electrode layer that is positioned at upper-lower position in this case, but with element with layer conductive layer 55(56).Free layer 51 is made up of magnetic material, can be also the structure (its intermediate interlayer is that nonmagnetic material forms, and is generally Ru, Ta etc.) of ferromagnetic layer-wall-ferromagnetic layer, and its magnetic moment 61 changes with outfield; Nonmagnetic layer 52 is made up of nonmagnetic substance, if giant magnetoresistance element, nonmagnetic layer 52 is metal material, as Cu, Al etc., if magnetic tunnel junction element is nonmetallic materials, as AlOx, MgO etc.; The magnetic moment 63 of pinning layer 53 is constant, normally ferromagnetic layer-inverse ferric magnetosphere composite structure or SAF layer-inverse ferric magnetosphere structure.Top electrode layer 56 and bottom electrode layer 55 are made up of metallic conductor, in practical application, can pass through top electrode layer 56 and bottom electrode layer 55 by multiple element serial or parallel connections, or go here and there and mix and be connected to an equivalent resistance and use, top electrode layer 56 and bottom electrode layer 55 also comprise the cap layer and the Seed Layer that guide lattice growth simultaneously.In the time that free layer magnetic moment 61 is parallel with pinning layer magnetic moment 63, the resistance R minimum of element, is R
l; In the time of free layer magnetic moment 61 and pinning layer magnetic moment 63 antiparallel, the resistance R maximum of element, is R
h, as shown in Figure 4, in figure, black arrow represents the magnetic moment direction of pinning layer to its curve of output, white arrow represents free layer magnetic moment direction.
In actual applications, need the resistance R of element at R
land R
hbetween linear change, can realize in the following manner: for example above or below free layer 51, deposit antiferromagnet, or at component ambient, permanent magnet is set, or at component ambient, electric current line is set, or be long and narrow shape by element design, such as rectangle, ellipse, rhomboid etc., utilize its shape anisotropy can setover free layer magnetic moment to reach linearizing object.Conventionally the thickness of magnetoresistive element is very thin, therefore it can be regarded as two-dimentional device, and the shape of the magnetoresistive element of therefore describing is in this article overlooks the shape that the angle of substrate is seen.
In experimental study, magneto-resistor nano thin-film is prepared into magnetoresistive element by nanometer or micro-processing technology and uses, the physical parameter of each magnetoresistive element is identical in theory, but in fact because the consistance (Uniformity) of magnetoresistive element in preparation process is so problem is difficult to the consistance that reaches high, simultaneously due to the needs in design, in sensor industry, seldom using single magnetoresistive element is sensitive element, but multiple magnetoresistive element series, parallel or string series-parallel connection are coupled together and become an equivalent magneto-resistor.The advantage of doing is like this to arrange flexibly the relevant physical parameter (as resistance) of magneto-resistor, has also reduced the risk of electron tunneling, thereby has improved yields simultaneously, has realized large-scale production.Fig. 5 is a kind of series system, and as shown in the figure, multiple magnetic tunnel junction elements 41 are together in series by top electrode layer 56 and bottom electrode layer 55.Conventionally the series system of giant magnetoresistance element is left and right series connection, and the meaning of electrode layer and bottom electrode layer has not just existed, and as shown in Figure 6, giant magnetoresistance element 41 is together in series by conductive layer 55.
Sensing unit can be single resistance, half-bridge or full bridge structure.The brachium pontis of described single resistance, half-bridge or full-bridge is connected and/or is composed in parallel by one or more identical magnetic sensor elements, and we can be equivalent to a magneto-resistor each brachium pontis, and the magnetic-field-sensitive direction of the magnetic sensor elements in each brachium pontis is identical.Aforesaid single electric resistance structure contains a magneto-resistor, and half-bridge structure is composed in series by two identical magneto-resistors of physical property, and full bridge structure is connected and composed by four identical magneto-resistors of physical property, all will pass into steady voltage or electric current when use.Because single electric resistance structure only contains an equivalent magnetic resistance, pass into its output signal after steady current or voltage and be the change in voltage at its two ends, therefore do not repeat them here, below will elaborate half-bridge and full bridge structure.
Fig. 7 is the electrical connection schematic diagram of half-bridge structure.Adopting the magneto-potentiometer of half-bridge structure sensing unit is three port type, and magneto-resistor 71 and 73 is together in series, three port V
bias, GND and V
oUTbe connected with circuit module 12 and draw pin 14 connecting systems, V by output
biasand between GND, pass into steady voltage or electric current.Half-bridge can be with reference to half-bridge or recommend half-bridge.Sensitivity with reference to the brachium pontis (magneto-resistor) 73 of half-bridge is very low, and the change in resistance in measurement range can be similar to thinks zero, and the change in resistance of another brachium pontis (magneto-resistor) 71 causes its both end voltage (port V
oUTwith port V
biasbetween voltage) change, this voltage is output voltage; Recommending half-bridge is the magnetic-field-sensitive opposite direction of two brachium pontis 71,73, is being subject to the next resistance increase of same outer field action, and a resistance reduces, and the variation of external magnetic field causes output voltage (port V
oUTwith port V
biasor voltage between port GND) variation; Gradient half-bridge is applicable to gradient fields, along the direction field intensity difference of gradient fields, causes two magneto-resistor change in resistance differences that sensitive direction is identical, thereby causes the variation of output voltage, and the curve of output schematic diagram that half-bridge structure changes with outfield as shown in Figure 8.
Fig. 9 is the electrical connection schematic diagram of full bridge structure.Magneto-resistor 71 and 72 series connection, 73 and 74 series connection, two resistance of series connection are to parallel connection again, port V
biasand between GND, pass into steady voltage or electric current.Full-bridge can be with reference to full-bridge or recommend full-bridge.The sensitivity of two brachium pontis 71 and 74 that lays respectively at left and right half-bridge with reference to full-bridge is very low, change in resistance in measurement range can be similar to thinks zero, brachium pontis 73 is identical with 74 magnetic-field-sensitive direction, under same outer field action, its change in resistance is identical, thereby produce electric potential difference between output terminal V+ and V-, be output voltage, and then measure magnetic field.The brachium pontis 71 of recommending full-bridge is identical with 74 magnetic-field-sensitive direction, 72 is identical with 73 magnetic-field-sensitive direction, 71 and 72 magnetic-field-sensitive opposite direction, under the effect in same outfield, when 71 and 74 resistances become large, 72 and 73 resistance reduces (or 71 and 74 resistances when reducing 72 and 73 resistances increase), thereby between output terminal V+ and V-, produce electric potential difference, i.e. output voltage, and then measure magnetic field.The curve of output schematic diagram that full bridge structure changes with outfield as shown in figure 10.
Reduce can adopting but be not limited to following mode forming with reference to the brachium pontis of half/full-bridge of magneto-resistor sensitivity: as deposited the soft magnetic material that magnetic permeability is high on magnetoresistive element, permanent magnet or the inverse ferric magnetosphere of deposition of thick etc. that bias-field is large are set.By can once preparing with reference to full-bridge chip on a wafer with upper type.
Often can run in actual applications the situation that disturb in outfield, can have influence on measurement, thereby cause difficulty to production.Because the stray field 32 of magnetic medium 21 is a gradient fields, well select therefore employing antijamming capability is strong and the insensitive gradiometer structure of measuring distance is one.Gradiometer formula structure can be that gradient half-bridge can be also gradient full-bridge.The connected mode of gradient half-bridge can be with reference to figure 7.Along different with 73 change in resistance in two magneto-resistors 71 of different physical locations in gradient fields 32 directions, thereby produce output, its output signal curve can be with reference to figure 8.
Figure 11 is that the physical location of gradient full-bridge is put figure.As shown in the figure, along the direction of gradient magnetic 32, magneto-resistor 71 is identical with 74 position, and magneto-resistor 72 is identical with 73 position, at port V
biasand between GND, input steady voltage.Under the effect that there is no outfield, the resistance of magneto-resistor 71,72,73,74 is identical, and output terminal does not have electric potential difference, no-output.In the time that outfield 32 puts in four magneto-resistors, because this magnetic field is gradient fields, field intensity along gradient fields direction varies in size, along gradient direction position, identical magneto-resistor 71 is identical with 74 resistance change, magneto-resistor 72 is identical with 73 resistance change, magneto-resistor 71 and 72(73 and 74) change in resistance different, between the output terminal V+ of gradient full-bridge and V-, there is output voltage V
oUT, its curve of output can be with reference to Figure 10.
Figure 12 is many group sensing unit (11a, 11b ... electrical connection schematic diagram (output port does not indicate in the drawings) 11n).Multiple gradient full-bridge parallel connection of multiple magneto-resistors composition, unifiedly provides steady voltage or steady current by system, and the output port of each sensing unit is connected with circuit module 12, organizes output signal more and is passed to circuit module 12 and processes the system that is passed to again.In like manner, the electric connection mode of the sensing unit of the electric connection mode of the sensing unit of multiple single electric resistance structures and multiple half-bridge structures multiple full bridge structures to that indicated in the drawings is identical.
The information of magnetic medium normally defines like this: if the magnetic moment direction of two adjacent media particles is identical, the stray field signal of this unit is defined as 0; If the magnetic moment direction difference of two adjacent magnetic medium particles, the stray field signal of this unit is defined as 1.Because the stray field that the stray field of the signal unit that is 0 is 1 than signal is much larger, in output signal curve figure, can be offset, the signal peak spacing of actual measurement is different with media particle spacing, and this phenomenon is referred to as Jitter Shift in sensor industry.In the distance of Jitter Shift phenomenon between sensor and medium is very near, can ignore, if but measuring distance increases, thus Jitter Shift effect can very obviously make output signal serious distortion.Because can meeting, the sensor in the present embodiment is built in this requirement in mobile device, therefore need to there is certain distance from testing medium, for this problem, solution is, near giant magnetoresistance element or magnetic tunnel junction element, soft magnetic bodies is set, as shown in figure 13.Figure 13 is the schematic top plan view of an equivalent magnetic resistance that is provided with soft magnetic bodies 81, as shown in the figure, sensing element 41 couples together by top electrode 56 and bottom electrode 55, soft magnetic bodies 81 is arranged near sensing element 41, it act as poly-magnetic, can be interpreted as qualitatively that the distance that is equivalent to furthered magneto-resistor and medium by the magnet accumulating cap of soft magnetic material is to eliminate Jitter Shift phenomenon.Each sensing element 41 accessory configuration have a pair of soft magnetic bodies 81 in this embodiment, are optimal result, also can be designed to multiple sensing elements 41 and share a pair of strip soft magnetic bodies 81.
Sensing unit is prepared into wafer by vacuum coating and micro-processing (or nanoprocessing) technology, is then cut into the rear use of one single chip piece (Die).
Should be appreciated that the above detailed description of technical scheme of the present invention being carried out by preferred embodiment is illustrative and not restrictive.Those of ordinary skill in the art modifies reading the technical scheme that can record each embodiment on the basis of instructions of the present invention, or part technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (12)
1. the magnetic head based on magneto-resistor technology, is characterized in that: pin is drawn in it sensing unit and output that comprises that at least one or more magnetic field induction direction is identical;
Described sensing unit is in order to detect the stray field of magnetic medium;
Input end and output terminal that pin is drawn in described output are electrically connected with the corresponding port of described sensor respectively, in order to sensor is connected with system;
The sensitive element of described sensing unit is giant magnetoresistance element or magnetic tunnel junction element, the multi-layer film structure that described giant magnetoresistance element and magnetic tunnel junction element are nanometer grade thickness, described nano-scale multilayer film structure at least comprises free layer, nonmagnetic layer and three layers of nanoscale film of pinning layer.
2. the magnetic head based on magneto-resistor technology according to claim 1, is characterized in that: described sensing unit is single resistance, half-bridge or full bridge structure.
3. the magnetic head based on magneto-resistor technology according to claim 2, is characterized in that: described half-bridge is for recommending half-bridge, with reference to half-bridge or gradient half-bridge, and described full-bridge is for recommending full-bridge, with reference to full-bridge or gradient full-bridge.
4. according to the magnetic head based on magneto-resistor technology described in claim 2 or 3, it is characterized in that: each brachium pontis of described half-bridge, full-bridge is made up of one or more magnetic-field-sensitive directions identical giant magnetoresistance element or magnetic tunnel junction element.
5. the magnetic head based on magneto-resistor technology according to claim 3, it is characterized in that: described gradient full-bridge and the giant magnetoresistance element of all brachium pontis of gradient half-bridge structure or the magnetic-field-sensitive direction of magnetic tunnel junction element are identical, and in full-bridge, two of relative position brachium pontis are arranged in the same position in space, and two brachium pontis of adjacent position are arranged in the diverse location in space.
6. the magnetic head based on magneto-resistor technology according to claim 1, it is characterized in that: described sensor also comprises circuit module, the corresponding port that the input/output terminal of described circuit module draws pin with sensing unit and output is respectively electrically connected, and described circuit module contains signal amplification unit, noise reduction unit and decoding unit.
7. the magnetic head based on magneto-resistor technology according to claim 6, is characterized in that: described circuit module also comprises electrostatic prevention unit.
8. the magnetic head based on magneto-resistor technology according to claim 6, is characterized in that: described circuit module also comprises ciphering unit for encrypting output signal.
9. according to the magnetic head based on magneto-resistor technology described in claim 6,7 or 8, it is characterized in that: described circuit module is integrated circuit (IC) chip, its input end and output terminal are electrically connected with the corresponding port of sensing unit by printed-wiring board (PWB).
10. the magnetic head based on magneto-resistor technology according to claim 1, is characterized in that: near described giant magnetoresistance element or magnetic tunnel junction element, be provided with soft magnetic bodies.
11. according to the magnetic head based on magneto-resistor technology described in claim 1,2,3,5,6,7,8 any one, it is characterized in that: described sensor comprises support, and described support is non-permanent magnetic material, in order to support all parts of described sensor.
12. magnetic heads based on magneto-resistor technology according to claim 11, is characterized in that: described sensor comprises shell, described shell is non-permanent magnetic material, is coated on the outside of described support, are placed in all parts of the described sensor in support in order to protection.
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| CN104808158A (en) * | 2015-05-07 | 2015-07-29 | 李川 | Ferroxcube detector |
| CN104880613A (en) * | 2015-06-01 | 2015-09-02 | 无锡乐尔科技有限公司 | Wearable electromagnetic radiometer |
| CN113124846A (en) * | 2021-05-21 | 2021-07-16 | 北京信息科技大学 | Half-bridge push-pull flow z-axis film gyroscope and processing method thereof |
| CN114236170A (en) * | 2020-09-09 | 2022-03-25 | 江苏多维科技有限公司 | Wheel speed sensor module |
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| CN2788259Y (en) * | 2005-04-15 | 2006-06-14 | 福建省电影机械厂 | Huge magnetic resistance sensor of paper money counter |
| CN102722932A (en) * | 2012-06-19 | 2012-10-10 | 兰州大学 | Magnetic head of currency detector |
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| CN102831708A (en) * | 2012-08-04 | 2012-12-19 | 白建民 | Magnetic reading head for point-of-sale terminal |
| CN103630150A (en) * | 2013-12-02 | 2014-03-12 | 无锡乐尔科技有限公司 | Magnetic potentiometer |
| CN203825177U (en) * | 2014-04-14 | 2014-09-10 | 无锡乐尔科技有限公司 | Magnetic head based on magneto-resistor technology |
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