CN103924269B - The application of a kind of non-dyestuff system leveling agent - Google Patents
The application of a kind of non-dyestuff system leveling agent Download PDFInfo
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- CN103924269B CN103924269B CN201310731859.5A CN201310731859A CN103924269B CN 103924269 B CN103924269 B CN 103924269B CN 201310731859 A CN201310731859 A CN 201310731859A CN 103924269 B CN103924269 B CN 103924269B
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- leveling agent
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- heteroaralkyl
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- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 46
- 239000000975 dye Substances 0.000 title claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 238000009713 electroplating Methods 0.000 claims abstract description 15
- 125000003710 aryl alkyl group Chemical group 0.000 claims abstract description 8
- 125000004475 heteroaralkyl group Chemical group 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 125000005017 substituted alkenyl group Chemical group 0.000 claims abstract description 4
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- 125000002769 thiazolinyl group Chemical group 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 10
- 239000002253 acid Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000012512 characterization method Methods 0.000 abstract description 2
- 125000000524 functional group Chemical group 0.000 abstract description 2
- 230000010534 mechanism of action Effects 0.000 abstract description 2
- 231100000252 nontoxic Toxicity 0.000 abstract description 2
- 230000003000 nontoxic effect Effects 0.000 abstract description 2
- 239000000654 additive Substances 0.000 description 18
- 230000000996 additive effect Effects 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000005282 brightening Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012452 mother liquor Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 polyoxyethylene Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000370738 Chlorion Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000806 Latten Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
The invention discloses the application of a kind of non-dyestuff system leveling agent, the molecular structural formula of described leveling agent is
wherein negatively charged ion X=Cl
-or Br
-; R
1=O or S or N; R
2, R
3, R
4=H, alkyl, thiazolinyl, aralkyl, heteroaralkyl, substituted alkyl, substituted alkenyl, substituted aralkyl or the one replaced in heteroaralkyl, described leveling agent is applied to sour copper electroplating technology.The present invention, on the basis fully understanding acid copper-plating leveling agent molecular characterization and the mechanism of action, seeks and devises to have specific functional groups, the molecule of traditional leveling agent different from the past on molecular structure and attribute.This kind of leveling agent molecule has good water solubility, colourless nontoxic, harmless, the advantages such as operating restraint is wider.Evade and overcome the defect of conventional dyes system leveling agent, facilitating the development of non-dyestuff system acid process for copper.
Description
Technical field
The present invention relates to the advanced function electronic chemical product field in semiconductor chip process, be specifically related to the application of a kind of non-dyestuff system leveling agent.
Background technology
Along with semiconductor chip process is to the future development of high-density, high function, high integrated and low cost, while reducing, electroplate technology is had higher requirement.Plating that is highlighted, high-flatness needs the additive with specific function and benefit.Therefore the selection of additive and quality evaluation most important for semicon industry.In current acid copper-plating, additive system is mainly divided into organic dye system and non-dyestuff system, and it is main for being still at present in industry member with dyestuff.210,510 series as Atotech (Atotech) that organic dye is representative, without the representational EPI series (producing for the wheel hub of Ford Motor at present) being AM General company and releasing of dyestuff cording.What domestic market application was relatively wide is MN series additive without dye system.
Although organic dye system molecule is with a long history as sour copper leveling agent, there is obvious shortcoming in it: (1) is contaminated equipment easily; (2) plating solution is unstable when high temperature, and component is easily decomposed; (3) coating internal stress difference etc.The non-dyestuff system additive system (the MN series as China's exploitation) commercially applied to some extent at present due to bright range narrow, bright dipping is slow, Surface flat (especially low current density district) is poor, the defects such as covering power is not enough, low grade products can only be used for, the high request of semicon industry for quality of coating and additive molecule cannot be met, even if the EPI series of the U.S. also has no the report for semicon industry.
Summary of the invention
By the Novel leveling agent exploring non-dye class, environmental friendliness and the molecule of stable chemical nature are electroplated as sour copper, the invention provides the non-dyestuff system leveling agent in a kind of sour copper plating, object is the defect evading or overcome conventional dyes system leveling agent, thus promotes the development of non-dyestuff system acid process for copper.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the present invention is achieved through the following technical solutions:
An application for non-dyestuff system leveling agent, the molecular structural formula of described leveling agent is
Wherein, negatively charged ion X=Cl
-or Br
-; R
1=O or S or N; R
2, R
3, R
4=H, alkyl, thiazolinyl, aralkyl, heteroaralkyl, substituted alkyl, substituted alkenyl, substituted aralkyl or the one replaced in heteroaralkyl, described leveling agent is applied to sour copper electroplating technology.
Preferably, described leveling agent is L113, and its molecular structural formula is
The invention has the beneficial effects as follows:
The present invention, on the basis fully understanding acid copper-plating leveling agent molecular characterization and the mechanism of action, seeks and devises to have specific functional groups, the molecule of traditional leveling agent different from the past on molecular structure and attribute.This kind of leveling agent molecule has good water solubility, colourless nontoxic, harmless, the advantages such as operating restraint is wider.Evade and overcome the defect of conventional dyes system leveling agent, facilitating the development of non-dyestuff system acid process for copper.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technique means of the present invention, and can be implemented according to the content of specification sheets, coordinates accompanying drawing to describe in detail below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, and form a application's part, schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is molecular structural formula of the present invention;
Fig. 2 is the molecular structural formula of an embodiment of the present invention L113;
Fig. 3 is the Hull groove test electroplating effect comparison diagram that L113 add-on of the present invention regulates experiment;
Fig. 4 is fixing L113 concentration of the present invention, carries out Hull groove test electroplating effect comparison diagram after adding conventional additive L26;
Fig. 5 a-5e is unchangable traditions additive L26 concentration, carries out the effect contrast figure of Hull groove test plating after adding L113 of the present invention;
Fig. 6 is continuous current electroplating effect comparison diagram.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the present invention in detail.
Shown in Figure 1, a kind of non-dyestuff system leveling agent, be applied to sour copper electroplating technology, its molecular structural formula is
Wherein, negatively charged ion X=Cl
-or Br
-; R
1=O or S or N; R
2, R
3, R
4=H, alkyl, thiazolinyl, aralkyl, heteroaralkyl, substituted alkyl, substituted alkenyl, substituted aralkyl or the one replaced in heteroaralkyl.
Preferably, described leveling agent is L113, its molecular structure be for
The present invention passes through great many of experiments, explore the feasibility as novel sour copper leveling agent of the molecule with above-mentioned feature, have studied its in sour copper plating system with other components (as inhibitor, brightening agent etc.) etc. composite chemical ratios on the impact of quality of coating, and itself and traditional leveling agent are composite in the impact on sour copper electroplating quality.Its specific experiment flow process is as follows:
(1) preparation of electroplating chemical solution system
1, the electroplating chemical solution needed for the plating of sour copper and mother liquor system is prepared
The component of mother liquor comprises the CuSO that concentration is 200g/L
45H
2o, concentration are the H of 100g/L
2sO
4and concentration is the chlorion of 0-120ppm;
By the above-mentioned CuSO of calculated amount
45H
2o deionized water and stirring is fully dissolved, and slowly adds the above-mentioned H of calculated amount
2sO
4and HCl, be diluted to 1L after filtration, get in 250mL to Hull groove for subsequent use;
2, the additive needed for the plating of sour copper is prepared
The component of additive comprises inhibitor polyoxyethylene glycol (PEG), the outstanding glossy dark green B (L26) of conventional dyes type leveling agent and/or non-dyestuff system leveling agent L113 and brightening agent sodium polydithio-dipropyl sulfonate (SPS);
The pressed powder of PEG, L113 and/or L26 and SPS is diluted in 50mL volumetric flask with deionized water dissolving respectively, the aqueous solution of PEG, L113 and/or L26 and SPS of taking calculated amount adds in the Hull groove at mother liquor place successively, and makes full use of more than pneumatic blending 10min;
(2) plating conditions and method (groove test in Hull is electroplated with continuous current)
1, galvanic anode: the plough groove type phosphorus-copper anode carrying out pre-film (Anodefilming) in advance, is placed in both sides before and after negative plate respectively;
2, electroplating cathode: negative electrode sheet brass;
3, negative plate pre-treatment: negative electrode sheet brass washed with de-ionized water, then for plating;
(3) choose the leveling agent that L113 electroplates as sour copper and carry out testing research
1, chlorine ion concentration is on the impact experiment of leveling agent L113 molecule leveling performance
Can see from upper table, when chlorine ion concentration is about 80ppm, Hull slotted vane entirety is comparatively bright, and the flaw such as burr, pin hole is less.At this quasi-molecule as under the condition of leveling agent, adjustable chlorine ion concentration scope is 70-90ppm.In follow-up study, employing chlorine ion concentration is 80ppm.
2, L113 add-on regulates experiment
Hull groove test plating conditions:
(1)2A,5min
(2) Cl
-concentration: 80ppm
(3)T＝24.0℃,BathT＝24.0℃,H(humidity)＝50.0％
Shown in Figure 3
L113 test-results: when keeping other conditions constant, latten(-tin) after suitable adjustment add-on plating improves a lot than the blank copper sheet luminance brightness not adding leveling agent, compared with traditional leveling agent, also have and improve by improving processing condition and optimizing the methods such as molecular structure further the space that it fills and leads up performance.
(4) the binary leveling agent performance study based on L113
Known by above-mentioned experiment, the feasibility using the molecule based on L113 molecular structure as Novel leveling agent.Carry out next step experiment simultaneously, study by L113 and traditional leveling agent molecule L 26 composite time impact on quality of coating.
1, fixed L 113 concentration, adds the outstanding glossy dark green B (L26) of conventional additive
Hull groove test plating conditions:
(1)2A,5min
(2)T＝24.0℃,BathT＝24.0℃,H(humidity)＝50.0％
Shown in Figure 4
2, unchangable traditions additive L26 concentration, adds new additive agent L113
Hull groove test plating conditions:
(1)2A,5min
(2)T＝24.0℃,BathT＝24.0℃,H(humidity)＝50.0％
A. additive: L260.5mL, L1130mL, Cl
-80ppm
Phenomenon: shown in Fig. 5 a, entirety is brightless.
B. additive: L260.5mL, L1130.25mL, Cl
-80ppm
Phenomenon: shown in Fig. 5 b, overall more little than changing with a, low district 1cm slightly brightens.
C. additive: L260.5mL, L1130.5mL, Cl
-80ppm
Phenomenon: shown in Fig. 5 c, entirety starts to brighten, but crystallization is thin not, and brightness is inadequate.
D. additive: L260.5mL, L1131mL, Cl
-80ppm
Phenomenon: shown in Fig. 5 d, luminance factor c brightens, but there is no the best fashion of L26 but the very thin Surface flat of crystallization is fine, low district 2cm is atomized.
E. additive: L260.5mL, L1131.5mL, Cl
-80ppm
Phenomenon: shown in Fig. 5 e, high district 3-4cm crystallization is coarse, and Zhong Di district is smooth, low district adularescent striped.
Conclusion: fixed L 26 is that the amount that 0.5mL increases L113 gradually can find out that although very brightless, crystallization is careful between 10ASD-4ASD when L113 amount is for 1mL.
Reach a conclusion from above experiment, the ratio suitably regulating L26 and L113 to add can obtain different electroplating effects.
(5) continuous current plating
Current density: 5asd
Thickness of coating: 5 μm
Electroplating time: 4.5min
Calculated by Faraday's law, the electroplating efficiency being leveling agent with L113 molecule can reach 99.7%
Shown in Figure 6, from test piece quality of coating, surface-brightening, planarization is better.But viewed from plating result, the brighter brightness of 2ASD and 12ASD does not have 5ASD good, and current density operation scope can within 2ASD to 12ASD.
By to the selected of molecular structure and condition optimizing experiment, we demonstrate the possibility of types of molecules described in the invention as sour copper electroplating technology leveling agent, and to be tested by Hull groove related system and the assessment of plating performance has been carried out in continuous current plating.
Above-described embodiment, just in order to technical conceive of the present invention and feature are described, its objective is and is one of ordinary skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.The change of every equivalence done by the essence of content of the present invention or modification, all should be encompassed in protection scope of the present invention.
Claims (2)
1. an application for non-dyestuff system leveling agent, the molecular structural formula of described leveling agent is
Wherein, negatively charged ion X=Cl
-or Br
-; R
1=O or S or N; R
2, R
3, R
4=H, alkyl, thiazolinyl, aralkyl, heteroaralkyl, substituted alkyl, substituted alkenyl, substituted aralkyl or the one replaced in heteroaralkyl, is characterized in that: described leveling agent is applied to sour copper electroplating technology.
2. the application of non-dyestuff system according to claim 1 leveling agent, it is characterized in that: described leveling agent is L113, its structural formula formula is
。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310731859.5A CN103924269B (en) | 2013-12-26 | 2013-12-26 | The application of a kind of non-dyestuff system leveling agent |
| CN201480000564.3A CN105026385B (en) | 2013-12-26 | 2014-05-05 | A kind of method applied to the leveling agent composition of microelectronics and its for metal electrodeposition |
| PCT/CN2014/076807 WO2015096347A1 (en) | 2013-12-26 | 2014-05-05 | Leveling composition and method for electrodeposition of metals in microelectronics |
| US13/261,924 US9551081B2 (en) | 2013-12-26 | 2014-05-05 | Leveling composition and method for electrodeposition of metals in microelectronics |
| US15/388,927 US9920023B2 (en) | 2013-12-26 | 2016-12-22 | Leveling composition and method for electrodeposition of metals in microelectronics |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310731859.5A CN103924269B (en) | 2013-12-26 | 2013-12-26 | The application of a kind of non-dyestuff system leveling agent |
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| Publication Number | Publication Date |
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| CN103924269A CN103924269A (en) | 2014-07-16 |
| CN103924269B true CN103924269B (en) | 2016-04-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102095497B1 (en) * | 2016-11-23 | 2020-04-01 | 쑤저우 신하오 머티리얼즈 엘엘씨 | Copper crystal grains with high priority orientation and method for manufacturing the same |
| KR102201349B1 (en) * | 2016-11-23 | 2021-01-12 | 쑤저우 신하오 머티리얼즈 엘엘씨 | First, a method for producing an electroplated copper layer having a growth orientation |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9551081B2 (en) | 2013-12-26 | 2017-01-24 | Shinhao Materials LLC | Leveling composition and method for electrodeposition of metals in microelectronics |
| KR101893338B1 (en) | 2014-12-30 | 2018-08-30 | 쑤저우 신하오 머티리얼즈 엘엘씨 | Leveler, leveling composition and method for electrodeposition of metals in microelectronics |
| CN108396344B (en) * | 2018-03-19 | 2021-02-12 | 苏州昕皓新材料科技有限公司 | Electrolytic copper foil with distorted banded disordered winding microstructure and preparation method thereof |
| CN109112580A (en) * | 2018-09-18 | 2019-01-01 | 苏州昕皓新材料科技有限公司 | One kind having anisotropic metal material of thermodynamics and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101634041A (en) * | 2008-07-21 | 2010-01-27 | 中国科学院宁波材料技术与工程研究所 | Method and solution for electrogalvanizing surface of zinc alloy workpiece comprising blind hole |
| CN101935836A (en) * | 2010-08-03 | 2011-01-05 | 山东金宝电子股份有限公司 | Surface treatment process of reddened copper foil for high-grade FR-4 copper-clad plate |
| CN102047438A (en) * | 2008-05-30 | 2011-05-04 | 阿托特希德国有限公司 | Electroplating additive for the deposition of metal, a binary, ternary, quaternary or pentanary alloy of elements of group 11 (IB)-group 13 (IIIA)-group 16 (VIA) |
| CN102418129A (en) * | 2011-11-18 | 2012-04-18 | 山东金宝电子股份有限公司 | Surface treatment process of copper foil for high-Tg halogen-free plate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3670185B2 (en) * | 2000-01-28 | 2005-07-13 | 三井金属鉱業株式会社 | Method for producing surface-treated copper foil for printed wiring board |
-
2013
- 2013-12-26 CN CN201310731859.5A patent/CN103924269B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102047438A (en) * | 2008-05-30 | 2011-05-04 | 阿托特希德国有限公司 | Electroplating additive for the deposition of metal, a binary, ternary, quaternary or pentanary alloy of elements of group 11 (IB)-group 13 (IIIA)-group 16 (VIA) |
| CN101634041A (en) * | 2008-07-21 | 2010-01-27 | 中国科学院宁波材料技术与工程研究所 | Method and solution for electrogalvanizing surface of zinc alloy workpiece comprising blind hole |
| CN101935836A (en) * | 2010-08-03 | 2011-01-05 | 山东金宝电子股份有限公司 | Surface treatment process of reddened copper foil for high-grade FR-4 copper-clad plate |
| CN102418129A (en) * | 2011-11-18 | 2012-04-18 | 山东金宝电子股份有限公司 | Surface treatment process of copper foil for high-Tg halogen-free plate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102095497B1 (en) * | 2016-11-23 | 2020-04-01 | 쑤저우 신하오 머티리얼즈 엘엘씨 | Copper crystal grains with high priority orientation and method for manufacturing the same |
| KR102201349B1 (en) * | 2016-11-23 | 2021-01-12 | 쑤저우 신하오 머티리얼즈 엘엘씨 | First, a method for producing an electroplated copper layer having a growth orientation |
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| CN103924269A (en) | 2014-07-16 |
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