CN103923605A - Manufacturing method for silicon carbide ball - Google Patents

Manufacturing method for silicon carbide ball Download PDF

Info

Publication number
CN103923605A
CN103923605A CN201410097403.2A CN201410097403A CN103923605A CN 103923605 A CN103923605 A CN 103923605A CN 201410097403 A CN201410097403 A CN 201410097403A CN 103923605 A CN103923605 A CN 103923605A
Authority
CN
China
Prior art keywords
silicon carbide
silicon
ball
carbide ball
sand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410097403.2A
Other languages
Chinese (zh)
Other versions
CN103923605B (en
Inventor
李建华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TANGSHAN SHENGNUO NAWEI TECHNOLOGY Co Ltd
Original Assignee
TANGSHAN SHENGNUO NAWEI TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TANGSHAN SHENGNUO NAWEI TECHNOLOGY Co Ltd filed Critical TANGSHAN SHENGNUO NAWEI TECHNOLOGY Co Ltd
Priority to CN201410097403.2A priority Critical patent/CN103923605B/en
Publication of CN103923605A publication Critical patent/CN103923605A/en
Application granted granted Critical
Publication of CN103923605B publication Critical patent/CN103923605B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Crushing And Grinding (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The invention belongs to preparation of grinding materials and specifically relates to a manufacturing method for a silicon carbide ball. The silicon carbide ball is mainly used for no-pollution grinding of ultrafine ultrapure powder for silicon carbide ceramics. The method comprises the following processing steps: material selection; crushing and reshaping; extrusion, grinding and rubbing; screening; magnetic separation; self-grinding; cleaning; drying; etc. The method provided by the invention overcomes the technical problems of high production cost and great pollution to a product in the prior art and has the advantages of small pollution to the prepared silicon carbide ball, low production cost and the like, and each index of the prepared silicon carbide ball is better than that of a conventional silicon carbide grinding ball.

Description

A kind of making method of silicon carbide ball
Technical field
The invention belongs to the preparation of abrasive substance, refer to especially a kind of making method of silicon carbide ball, this silicon carbide ball is mainly used in silicon carbide ceramics to carry out pollution-free grinding with ultra-fine ultrapure powder.
Background technology
Along with the range of application of silicon carbide ceramics constantly expands, for the preparation of the demand of high density carbon SiClx ceramic technology powder, also day by day strengthen, especially particularly urgent by the demand of submicron powder to pressureless sintering silicon carbide ceramic.
Obtaining submicron product in current world wide, mostly adopt the mechanical mill mode of the high-energy ball milling that cost is relatively cheap, wherein grinding medium has two kinds: the one, its product is had to the steel ball of very large pollution, the consequence that this mode of production is brought has increased later stage chemical removal of iron operation exactly, and then can produce a series of production and environmental issue, for addressing these problems, can increase every cost.The 2nd, adopt the free of contamination high-purity carborundum grinding medium of silicon carbide, with the silicon carbide ceramics ball that pressureless sintering method is made, silicon carbide powder is carried out to pollution-freeization extra-fine grinding, though this method is simple, pollution-free and exempt from later stage deferrization process, but because the price of silicon carbide ceramics ball is very expensive, because its production cost is high, most of manufacturing enterprises cannot accept.
Summary of the invention
The object of the present invention is to provide a kind of making method of silicon carbide ball of low production cost, make the extra-fine grinding of silicon carbide powder realize pollution-freeization operation.
Overall technology design of the present invention is:
A making method for silicon carbide ball, comprises following processing step:
A, select materials: selecting a kind of mixture of take in quartz sand and refinery coke or quartz sand and anthracite is raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 5-10mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 2-3 time;
C, extruding, stone roller are rubbed: broken orthopedic silicon-carbide particle sand in step B is carried out to mechanical presses by planetary type wheel mill and stone roller is rubbed, make profile for the sand particles of four directions circle or six square circulars, the tap density >2.0g/cm of described sand particles 5-0.5mm 3;
D, screening: to the granule sieving of preparing in step C, remove the sand particles that diameter is less than 0.5mm;
Screening out part can be used as the grinding raw material of used for refractory material carborundum powder or directly uses as the silicon carbide sand of used for refractory material 0.5mm specification.
E, magnetic separation: iron and Magnetic Materials in sand particles prepared by employing magnetic separation removal step D;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 20-25 hour, makes profile and is round potato shape or circular silicon carbide ball;
G, cleaning, oven dry: the silicon carbide ball of preparing in step e is cleaned, dried.
Because power is 20000KW, the above resistance furnace smelting production silicon carbide smelting time is long, temperature is high, not only can make the abundant overflowing of impurity but also can make the combination of carborundum crystals reach high fine and close, thereby can select for making the high purity high dense sand grains of silicon carbide ball, because of fragmentation and the shaping that last one technique of processing of silicon carbide sand is exactly Ba Make trimmer at present, and objectively at Ba Make trimmer, some reaches the broken limit in fragmentation repeatedly, by shaping repeatedly and the sand particles of 5-10mm that finally can not be broken, the quality percentage composition >99% of the silicon carbide of this part particle, single particle density>=3.0g/cm 3,, having reached the basic demand of making silicon carbide ball, the consideration extensive for raw material sources, cost of manufacture is cheap, selects quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide 3, the particle diameter silicon-carbide particle sand that is 5-10mm.
Concrete technical conceive of the present invention also has:
For removing more up hill and dale the impurity of carbonization silicon ball surface, preferably technical scheme is, also comprises a step H in the making method of silicon carbide ball, is the silicon carbide ball after drying in step G is dry-cleaned, and removes the impurity of carbonization silicon ball surface.
For meeting the requirement for broken shaping in step B; further relatively low-density particle is wherein smashed to get rid of; and make the superhard and particle that can not be crashed to pieces reach the object of further shaping by high-speed friction process; preferred technical scheme is; step B high speed bar mark formula trimmer is selected wheel diameter 400mm, rotating speed 2200-2600 rev/min.
For further reaching extruding and grinding the effect of rubbing, by the brute force between silicon-carbide particle sand, mutually rub and make its further rule, preferred embodiment is, 2700 * 450/ millimeters of the mill disc specification ∮ of planetary type wheel mill in described step C, 1600 kilograms of charge amounts, 800 * 300/ millimeters of muller specification ∮, power of motor is 30 kilowatts.
Preferred and comparatively common embodiment is that in described step e, magnetic separator is selected in magnetic separation.
For the iron in silicon-carbide particle sand and Magnetic Materials, effectively remove, preferred embodiment, in described step e, magnetic separation selects magnetic flux to be greater than 18000 Gausses' intensity magnetic separator.
For guaranteeing the technique effect of self-grind, preferred technical scheme is that in described step F, agitator disk rotating speed is 800 revs/min.At the process of lapping of step F, because there being the circulation of water, particle surface impurity enters in water through friction, after coming off, so self-grind process is also particle removal of impurities process, through 20-25 hour self-grind, can become round potato shape or circular silicon carbide ball through range estimation.
For removing further the impurity of carbonization silicon ball surface, preferred embodiment, the cleaning in described step G is by water filling, carbonization silicon ball surface to be carried out, the water that after rinsing, discharge contains impurity.
More preferred embodiment, in described step H, be to adopt the silicon carbide ball blowing clearly after machine is dried to carry out surface dry-cleaning, remove the impurity of carbonization silicon ball surface.
The substantive distinguishing features that the present invention is obtained and significant technical progress are:
1, after the simultaneous test that the silicon carbide ball warp of producing by the inventive method is undertaken by applicant, show, as the mill of the high-energy stirring ball mill machine submicron silicon carbide powder of producing that is situated between, not only can exempt the later stage chemical treatment causing due to metallic pollution, and then accomplish pollution-free grinding, and can make the final size of product reach median size 0.35um.Indices is better than commercially available pressureless sintering silicon carbide mill ball.
2, employing the application's the prepared silicon carbide mill ball of method is compared to have with existing commercially available pressureless sintering silicon carbide grinding medium and is had high cost performance, after application, can greatly reduce the grinding cost (the commercially available price of pressureless sintering silicon carbide mill ball is not all ten thousand yuan/ton of 20-40 by granularity, is ten thousand yuan/ton of 2-3 and adopt the application's the prepared silicon carbide mill ball price of method) of submicron silicon carbide powder.
Embodiment
Below in conjunction with embodiment, the present invention is described further; but not as a limitation of the invention; the content that protection scope of the present invention is recorded with claim is as the criterion, and any equivalence techniques means of making according to specification sheets are replaced, and all do not depart from protection scope of the present invention.
Embodiment 1
A, select materials: select that to take the mixture of quartz sand and refinery coke be raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 5-6mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 2 times;
C, extruding, stone roller are rubbed: broken orthopedic silicon-carbide particle sand in step B is carried out to mechanical presses by planetary type wheel mill and stone roller is rubbed, make profile for the sand particles of four directions circle or six square circulars, the tap density >2.0g/cm of described sand particles 5-0.5mm 3;
D, screening: to the granule sieving of preparing in step C, remove the sand particles that diameter is less than 0.5mm;
E, magnetic separation: iron and Magnetic Materials in sand particles prepared by employing magnetic separation removal step D;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 20-25 hour, makes range estimation profile and is round potato shape or circular silicon carbide ball;
G, cleaning, oven dry: the silicon carbide ball of preparing in step e is cleaned, dried.
In the making method of silicon carbide ball, also comprising a step H, is that the silicon carbide ball after drying in step G is dry-cleaned, and removes the impurity of carbonization silicon ball surface.
Step B high speed bar mark formula trimmer is selected impeller diameter 400mm, rotating speed 2200-2600 rev/min.
2700 * 450/ millimeters of the mill disc specification ∮ of planetary type wheel mill in described step C, 1600 kilograms of charge amounts, 800 * 300/ millimeters of muller specification ∮, power of motor is 30 kilowatts.
In step e, magnetic separation selects magnetic flux to be greater than 18000 Gausses' intensity magnetic separator.
In described step F, agitator disk rotating speed is 800 revs/min.At the process of lapping of step F, because there being the circulation of water, particle surface impurity enters in water through friction, after coming off, so self-grind process is also particle removal of impurities process.
Cleaning in described step G is by water filling, carbonization silicon ball surface to be carried out, the water that after rinsing, discharge contains impurity.
In described step H, be to adopt the silicon carbide ball blowing clearly after machine is dried to carry out surface dry-cleaning, remove the impurity of carbonization silicon ball surface.
Embodiment 2
The difference of the present embodiment and embodiment 1 is:
A, select materials: select that to take the mixture of quartz sand and refinery coke be raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 8-10mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 3 times;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 25 hours, makes profile and is round potato shape or circular silicon carbide ball;
All the other contents are with embodiment 1.
Embodiment 3
The difference of the present embodiment and embodiment 1 is:
A, select materials: select that to take the mixture of quartz sand and anthracite be raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 5-6mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 2 times;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 20 hours, makes range estimation profile and is round potato shape or circular silicon carbide ball;
All the other contents are with embodiment 1.
Embodiment 4
The difference of the present embodiment and embodiment 2 is:
A, select materials: select that to take the mixture of quartz sand and anthracite be raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 5mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 3 times;
C, extruding, stone roller are rubbed: broken orthopedic silicon-carbide particle sand in step B is carried out to mechanical presses by planetary type wheel mill and stone roller is rubbed, make profile for the sand particles of four directions circle or six square circulars, the tap density >2.0g/cm of described sand particles 5-0.5mm 3;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 25 hours, makes range estimation profile and is round potato shape or circular silicon carbide ball;
All the other contents are with embodiment 2.
Embodiment 5
The difference of the present embodiment and embodiment 1 is:
A, select materials: select that to take the mixture of quartz sand and refinery coke be raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 6-9mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 3 times;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 22 hours, makes range estimation profile and is round potato shape or circular silicon carbide ball;
All the other contents are with embodiment 1.
Embodiment 6
The difference of the present embodiment and embodiment 1 is:
A, select materials: select that to take the mixture of quartz sand and anthracite be raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 5mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 2 times;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 23 hours, makes range estimation profile and is round potato shape or circular silicon carbide ball;
All the other contents are with embodiment 1.
Applicant adopts the prepared silicon carbide ball of above-described embodiment and existing silicon carbide mill ball used to carry out following simultaneous test, and testing installation adopts the vertical and high-speed that applicant uses to stir mill, and result is as follows:
By above-mentioned simultaneous test, draw to draw a conclusion: under equal conditions, adopt the application's the prepared silicon carbide mill ball of method to be better than existing commercially available prod in the technical indicators such as final size of density, abrasive product, the final size of product can reach 0.357um.

Claims (9)

1. a making method for silicon carbide ball, is characterized in that comprising following processing step:
A, select materials: selecting a kind of mixture of take in quartz sand and refinery coke or quartz sand and anthracite is raw material, with the resistance furnace that power is not less than 20000KW, smelting the silicon carbide produce is raw material, extracts quality percentage composition >99%, the single particle density>=3.0g/cm of silicon carbide from above-mentioned raw materials 3, the particle diameter silicon-carbide particle sand that is 5-10mm;
B, fragmentation, shaping: select high speed Ba Make formula trimmer by the silicon-carbide particle sand repeated stock friction in steps A 2-3 time;
C, extruding, stone roller are rubbed: broken orthopedic silicon-carbide particle sand in step B is carried out to mechanical presses by planetary type wheel mill and stone roller is rubbed, make profile for the sand particles of four directions circle or six square circulars, the tap density >2.0g/cm of described sand particles 5-0.5mm 3;
D, screening: to the granule sieving of preparing in step C, remove the sand particles that diameter is less than 0.5mm;
E, magnetic separation: iron and Magnetic Materials in sand particles prepared by employing magnetic separation removal step D;
F, self-grind: the particulate material after magnetic separation prepared by step e is placed in high energy wet method stirring mill carries out the formula that the do not shred self-grind of 20-25 hour, makes profile and is round potato shape or circular silicon carbide ball;
G, cleaning, oven dry: the silicon carbide ball of preparing in step e is cleaned, dried.
2. the making method of silicon carbide ball according to claim 1, characterized by further comprising a step H, is the silicon carbide ball after drying in step G is dry-cleaned, and removes the impurity of carbonization silicon ball surface.
3. the making method of silicon carbide ball according to claim 1, is characterized in that the impeller diameter 400mm of described step B high speed bar mark formula trimmer, rotating speed 2200-2600 rev/min.
4. the making method of silicon carbide ball according to claim 1, is characterized in that 2700 * 450/ millimeters of the mill disc specification ∮ of planetary type wheel mill in described step C, 1600 kilograms of charge amounts, and 800 * 300/ millimeters of muller specification ∮, power of motor is 30 kilowatts.
5. the making method of silicon carbide ball according to claim 1, is characterized in that in described step e, magnetic separator is selected in magnetic separation.
6. according to the making method of the silicon carbide ball described in any one in claim 1 or 5, it is characterized in that in described step e, magnetic separation selects magnetic flux to be greater than 18000 Gausses' intensity magnetic separator.
7. the making method of silicon carbide ball according to claim 1, is characterized in that in described step F, agitator disk rotating speed is 800 revs/min.
8. the making method of silicon carbide ball according to claim 1, is characterized in that the cleaning in described step G is by water filling, carbonization silicon ball surface to be carried out, the water that after rinsing, discharge contains impurity.
9. the making method of silicon carbide ball according to claim 2, is characterized in that in described step H it being to adopt the silicon carbide ball blowing clearly after machine is dried to carry out surface dry-cleaning, removes the impurity of carbonization silicon ball surface.
CN201410097403.2A 2014-03-14 2014-03-14 A kind of making method of silicon carbide ball Active CN103923605B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410097403.2A CN103923605B (en) 2014-03-14 2014-03-14 A kind of making method of silicon carbide ball

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410097403.2A CN103923605B (en) 2014-03-14 2014-03-14 A kind of making method of silicon carbide ball

Publications (2)

Publication Number Publication Date
CN103923605A true CN103923605A (en) 2014-07-16
CN103923605B CN103923605B (en) 2015-12-02

Family

ID=51142009

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410097403.2A Active CN103923605B (en) 2014-03-14 2014-03-14 A kind of making method of silicon carbide ball

Country Status (1)

Country Link
CN (1) CN103923605B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108163859A (en) * 2018-01-02 2018-06-15 宁夏星辰新材料有限公司 A kind of production technology of silicon carbide sand
CN108554538A (en) * 2018-05-19 2018-09-21 西安博尔新材料有限责任公司 A kind of preparation method of silicon carbide medium ball
CN109678518A (en) * 2018-12-30 2019-04-26 郑州可塑金新材料有限公司 It is used to prepare the high sphericity silicon carbide grinding bead of high intensity of high pure and ultra-fine powder
CN115925425A (en) * 2022-12-02 2023-04-07 江苏高越高新科技有限公司 Silicon carbide ball manufacturing process
CN116443880A (en) * 2023-03-02 2023-07-18 安徽微芯长江半导体材料有限公司 Method for improving bulk density of silicon carbide powder

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810368A (en) * 1985-04-10 1989-03-07 Electro Minerals (Canada) Inc. Automatic method for separating and cleaning silicon carbide furnace materials
CN1344675A (en) * 2001-08-07 2002-04-17 宁夏回族自治区新技术应用研究所 Production process of submicron level silicon carbide
CN101450801A (en) * 2007-11-28 2009-06-10 北京有色金属研究总院 Modified silicon carbide powder and preparation method thereof
CN101804982A (en) * 2010-04-15 2010-08-18 连云港东渡碳化硅有限公司 Purification method of silicon carbide superfine micropowder
CN201746330U (en) * 2010-08-26 2011-02-16 邹甫骏 Environment-friendly dry continuous-production line for preparing silicon-carbide granular material
CN102849737A (en) * 2011-06-28 2013-01-02 比亚迪股份有限公司 Preparation method for silicon carbide micropowder
CN103350020A (en) * 2013-06-29 2013-10-16 新疆新路标光伏材料有限公司 Technique for producing silicon carbide granular sand
CN103553625A (en) * 2013-11-16 2014-02-05 连云港龙塔研磨材料有限公司 Method for preparing silicon carbide micro powder for fine silicon carbide ceramics

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810368A (en) * 1985-04-10 1989-03-07 Electro Minerals (Canada) Inc. Automatic method for separating and cleaning silicon carbide furnace materials
CN1344675A (en) * 2001-08-07 2002-04-17 宁夏回族自治区新技术应用研究所 Production process of submicron level silicon carbide
CN101450801A (en) * 2007-11-28 2009-06-10 北京有色金属研究总院 Modified silicon carbide powder and preparation method thereof
CN101804982A (en) * 2010-04-15 2010-08-18 连云港东渡碳化硅有限公司 Purification method of silicon carbide superfine micropowder
CN201746330U (en) * 2010-08-26 2011-02-16 邹甫骏 Environment-friendly dry continuous-production line for preparing silicon-carbide granular material
CN102849737A (en) * 2011-06-28 2013-01-02 比亚迪股份有限公司 Preparation method for silicon carbide micropowder
CN103350020A (en) * 2013-06-29 2013-10-16 新疆新路标光伏材料有限公司 Technique for producing silicon carbide granular sand
CN103553625A (en) * 2013-11-16 2014-02-05 连云港龙塔研磨材料有限公司 Method for preparing silicon carbide micro powder for fine silicon carbide ceramics

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108163859A (en) * 2018-01-02 2018-06-15 宁夏星辰新材料有限公司 A kind of production technology of silicon carbide sand
CN108554538A (en) * 2018-05-19 2018-09-21 西安博尔新材料有限责任公司 A kind of preparation method of silicon carbide medium ball
CN108554538B (en) * 2018-05-19 2020-08-28 西安博尔新材料有限责任公司 Preparation method of silicon carbide dielectric sphere
CN109678518A (en) * 2018-12-30 2019-04-26 郑州可塑金新材料有限公司 It is used to prepare the high sphericity silicon carbide grinding bead of high intensity of high pure and ultra-fine powder
CN115925425A (en) * 2022-12-02 2023-04-07 江苏高越高新科技有限公司 Silicon carbide ball manufacturing process
CN116443880A (en) * 2023-03-02 2023-07-18 安徽微芯长江半导体材料有限公司 Method for improving bulk density of silicon carbide powder

Also Published As

Publication number Publication date
CN103923605B (en) 2015-12-02

Similar Documents

Publication Publication Date Title
CN102249236B (en) Production process for silicon carbide micropowder
CN103923605B (en) A kind of making method of silicon carbide ball
CN101705076B (en) Method for producing green silicon carbide FEPA F P
WO2013040849A1 (en) Α-alumina based abrasive grit and preparation method thereof
CN110577225B (en) Preparation method of high-whiteness calcined kaolin with ultrahigh oil absorption
CN107601496B (en) Nuclear graphite based on microcrystalline graphite as raw material and preparation method thereof
CN104387094B (en) Technique recycled by a kind of steel-making refractory materials
CN103613103A (en) Method for preparing filler-level silicon micropowder by using waste quartz crucibles as raw materials
CN105793002A (en) Method for recycling powdery silicon carbide waste products
CN103406196A (en) Multi-stage segmental ore-dressing, purifying, and comprehensive utilization method for low-grade magnesite
CN111285405A (en) Method for separating calcium ferrite and magnesium ferrite from steel slag magnetic separation tailings
CN103896285A (en) Method for preparing high-purity superfine quartz powder through waste quartz crucible
CN111004043A (en) Method for preparing Si-Si3N4-SiC composite material by utilizing polycrystalline silicon waste material
CN105295837A (en) Preparation method of silicon carbide powder for precision grinding
CN110606675B (en) Vanadium-titanium slag superfine powder admixture and preparation method thereof
CN103357480A (en) Silicon carbide cutting blade material and preparation method thereof
CN107285348A (en) A kind of method that water quenching prepares Ultrafine Aluminium Oxide Particle
CN104692427B (en) A kind of Brown Alundum smelting process
CN103979981A (en) A large-size semi-graphite silicon carbide carbon brick and a production process thereof
CN106430982A (en) Recycling method of glass ceramic material
CN106698432A (en) Method for preparing silicon-carbide micro powder
CN110894158A (en) Preparation method of low-iron fused quartz powder for solar polycrystalline silicon ingot casting
CN103373844A (en) Method for comprehensive utilization of resources in exploitation of weathered granite mine
CN101602027A (en) The kaolinic technology of the high mountain range of a kind of usefulness calcination of minerals
CN102390840A (en) Treatment method of dust collection powder produced in roasting process of aluminum hydroxide

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Manufacturing method for silicon carbide ball

Effective date of registration: 20170110

Granted publication date: 20151202

Pledgee: Tangshan financing Company limited by guarantee

Pledgor: TANGSHAN SHENGNUO NAWEI TECHNOLOGY CO., LTD.

Registration number: 2017990000016

PLDC Enforcement, change and cancellation of contracts on pledge of patent right or utility model