CN103915528A - Method for synthesizing copper-zinc-tin-sulfur-copper sulfide-copper-tin-sulfur thin film - Google Patents

Method for synthesizing copper-zinc-tin-sulfur-copper sulfide-copper-tin-sulfur thin film Download PDF

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CN103915528A
CN103915528A CN201410124033.7A CN201410124033A CN103915528A CN 103915528 A CN103915528 A CN 103915528A CN 201410124033 A CN201410124033 A CN 201410124033A CN 103915528 A CN103915528 A CN 103915528A
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copper
tin
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CN103915528B (en
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高濂
王静
张鹏
宋雪峰
李泓墨
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Shanghai Jiao Tong University
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    • HELECTRICITY
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    • H10F71/125The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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Abstract

本发明公开了一种铜锌锡硫-硫化铜-铜锡硫薄膜的合成方法,包括以下步骤:(1)配制电解液:将铜盐、锌盐、锡盐、硫代硫酸钠、柠檬酸三钠和酒石酸分别溶解到水中,然后再混合,混合均匀后调节pH值;(2)清洗基片:金属Mo片作为基片,用氢氧化钠溶液擦拭表面,除去表面锈迹,然后在乙醇、去离子水中逐次进行超声清洗,除去表面油渍;(3)电化学沉积:将清洗好的基片放入已经配制好的电解液中,设定沉积电压和时间并开始,沉积结束后将基片取出,用大量的去离子水和乙醇冲洗并吹干;(4)将步骤(3)得到的样品在氮气或者氩气中煅烧1小时,得到铜锌锡硫-硫化铜-铜锡硫薄膜。此方法成本低,过程简单,所制得的样品性能优良。

The invention discloses a synthesis method of copper-zinc-tin-sulfur-copper-sulfide-copper-tin-sulfur film, which comprises the following steps: (1) preparation of electrolyte: copper salt, zinc salt, tin salt, sodium thiosulfate, citric acid Trisodium and tartaric acid were dissolved in water respectively, and then mixed, and the pH value was adjusted after mixing evenly; (2) Cleaning the substrate: the metal Mo sheet was used as the substrate, and the surface was wiped with sodium hydroxide solution to remove surface rust, and then washed in ethanol , Ultrasonic cleaning in deionized water one by one to remove surface oil stains; (3) Electrochemical deposition: put the cleaned substrate into the prepared electrolyte, set the deposition voltage and time and start, after the deposition is completed, the substrate Take out the piece, rinse it with a large amount of deionized water and ethanol, and blow it dry; (4) Calcinate the sample obtained in step (3) in nitrogen or argon for 1 hour to obtain a copper zinc tin sulfur-copper sulfide-copper tin sulfur film . The method is low in cost, simple in process, and the prepared samples have excellent properties.

Description

一种铜锌锡硫-硫化铜-铜锡硫薄膜的合成方法A kind of synthetic method of copper zinc tin sulfur-copper sulfide-copper tin sulfur thin film

技术领域technical field

本发明涉及一种薄膜的合成方法,尤其涉及一种铜锌锡硫-硫化铜-铜锡硫薄膜的合成方法。The invention relates to a method for synthesizing a film, in particular to a method for synthesizing a copper-zinc-tin-sulfur-copper-sulfide-copper-tin-sulfur film.

背景技术Background technique

近年来能源和环境问题引起了人们关注,对高效、低成本的太阳能吸收材料的研究也越来越多。铜锌锡硫材料(缩写作CZTS)具有很多优点,比如:光吸收系数超过104cm-1,带隙大约是1.5eV,铜、锌、锡、硫元素在自然界储量丰富,不污染环境。目前它应用于太阳能电池的效率已经达到了12%。对于铜锌锡硫薄膜的制备,通常使用物理方法,包括共蒸发、磁控溅射等等,这些方法成本太高,很不适合较大规模的生产。所以,近几十年来,用化学方法制备铜锌锡硫薄膜变成了重中之重。常用的化学方法有电化学法,连续离子层吸收反应,水热法等等。但是,这些方法制备出的铜锌锡硫薄膜在进一步结晶的时候都要经过硫化(有剧毒)。其中,电化学方法是相对来讲成本最低的。对于铜锌锡硫这种四元硫化物来说,预制金属层再硫化方法被广泛使用。然而,这种方法不但需要硫化,还要进行2~3次电化学沉积。In recent years, energy and environmental issues have attracted people's attention, and research on efficient and low-cost solar absorbing materials has also increased. Copper zinc tin sulfur material (abbreviated as CZTS) has many advantages, such as: the light absorption coefficient exceeds 10 4 cm -1 , the band gap is about 1.5eV, copper, zinc, tin, and sulfur elements are abundant in nature, and do not pollute the environment. It is currently applied to the efficiency of solar cells has reached 12%. For the preparation of copper-zinc-tin-sulfur thin films, physical methods are usually used, including co-evaporation, magnetron sputtering, etc. These methods are too expensive to be suitable for large-scale production. Therefore, in recent decades, the preparation of copper-zinc-tin-sulfur thin films by chemical methods has become a top priority. Commonly used chemical methods include electrochemical method, continuous ion layer absorption reaction, hydrothermal method and so on. However, the copper-zinc-tin-sulfur thin films prepared by these methods must undergo sulfuration (very toxic) during further crystallization. Among them, the electrochemical method is relatively the lowest cost. For quaternary sulfides such as copper, zinc, tin, and sulfur, the resulfurization method of prefabricated metal layers is widely used. However, this method not only requires sulfuration, but also 2 to 3 times of electrochemical deposition.

出于这些考虑,本领域技术人员希望采用成本低、过程简单、安全无毒的合成方法。同时,积极开拓一步电化学法制备多元硫化物的使用领域。For these considerations, those skilled in the art wish to adopt a synthetic method with low cost, simple process, safety and non-toxicity. At the same time, actively develop the application field of one-step electrochemical method to prepare polysulfides.

发明内容Contents of the invention

有鉴于现有技术的上述缺陷,本发明所要解决的技术问题是提供一种一步电化学合成铜锌锡硫-硫化铜-铜锡硫薄膜(Cu2ZnSnS4-CuS-Cu3SnS4)的方法。In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a method for one-step electrochemical synthesis of copper zinc tin sulfur-copper sulfide-copper tin sulfur film (Cu 2 ZnSnS 4 -CuS-Cu 3 SnS 4 ) method.

为实现上述目的,本发明提供了一种铜锌锡硫-硫化铜-铜锡硫薄膜的一步电化学合成方法,合成过程中不使用表面活性剂,合成步骤如下:In order to achieve the above object, the invention provides a one-step electrochemical synthesis method of copper zinc tin sulfur-copper sulfide-copper tin sulfur film, no surfactant is used in the synthesis process, and the synthesis steps are as follows:

(1)配制电解液:将铜盐、锌盐、锡盐、硫代硫酸钠、柠檬酸三钠和酒石酸分别溶解到水中,然后再混合,混合均匀后调节pH值;(1) Preparation of electrolyte: Dissolve copper salt, zinc salt, tin salt, sodium thiosulfate, trisodium citrate and tartaric acid into water respectively, then mix them, adjust the pH value after mixing evenly;

(2)清洗基片:金属Mo片作为基片,用氢氧化钠溶液擦拭表面,除去表面锈迹,然后在乙醇、去离子水中逐次进行超声清洗,除去表面油渍;(2) Clean the substrate: metal Mo sheet is used as the substrate, and the surface is wiped with sodium hydroxide solution to remove surface rust, and then ultrasonically cleaned in ethanol and deionized water one by one to remove surface oil stains;

(3)电化学沉积:将清洗好的基片放入已经配制好的电解液中,设定沉积电压和时间并开始,沉积结束后将基片取出,用大量的去离子水和乙醇冲洗并吹干;(3) Electrochemical deposition: Put the cleaned substrate into the prepared electrolyte, set the deposition voltage and time and start, take out the substrate after deposition, rinse with a large amount of deionized water and ethanol and blow dry;

(4)将步骤(3)得到的样品在氮气或者氩气中煅烧1小时,得到铜锌锡硫-硫化铜-铜锡硫薄膜。(4) Calcining the sample obtained in step (3) in nitrogen or argon for 1 hour to obtain a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

优选地,步骤(1)中,以摩尔计,铜盐:锌盐:锡盐:硫代硫酸钠:柠檬酸三钠:酒石酸=0.5~3:1:0.5~3:1~5:4~10:2~8;其中,当铜盐:锌盐:锡盐:硫代硫酸钠:柠檬酸三钠:酒石酸=2:3:2:3:20:10时,所合成的薄膜性能较好。Preferably, in step (1), in terms of moles, copper salt: zinc salt: tin salt: sodium thiosulfate: trisodium citrate: tartaric acid=0.5~3:1:0.5~3:1~5:4~ 10:2~8; Among them, when copper salt: zinc salt: tin salt: sodium thiosulfate: trisodium citrate: tartaric acid = 2:3:2:3:20:10, the performance of the synthesized film is better .

优选地,步骤(1)中的铜盐为硫酸铜、硝酸铜或氯化铜,锌盐为硫酸锌、硝酸锌或氯化锌,锡盐为氯化亚锡或硫酸亚锡。Preferably, the copper salt in step (1) is copper sulfate, copper nitrate or copper chloride, the zinc salt is zinc sulfate, zinc nitrate or zinc chloride, and the tin salt is stannous chloride or stannous sulfate.

优选地,步骤(1)中调节pH值范围为2~7。Preferably, the pH range is adjusted to be 2-7 in step (1).

优选地,基片清洗过程中,用来擦拭基片的氢氧化钠浓度为1~15摩尔/升,超声时间为5~30分钟。基片的清洁程度,对成膜有很大的影响。Preferably, during the substrate cleaning process, the concentration of sodium hydroxide used to wipe the substrate is 1-15 mol/liter, and the ultrasonic time is 5-30 minutes. The cleanliness of the substrate has a great influence on the film formation.

优选地,电化学沉积过程中所用的电压是-0.8V~-1.5V,沉积时间是15~60分钟。沉积的电压和时间会显著影响薄膜的厚度和质量。Preferably, the voltage used in the electrochemical deposition process is -0.8V--1.5V, and the deposition time is 15-60 minutes. The voltage and time of deposition can significantly affect the thickness and quality of the film.

优选地,煅烧温度范围为200~600℃。Preferably, the calcination temperature ranges from 200 to 600°C.

本发明的有益效果是:The beneficial effects of the present invention are:

(1)该制备方法简单易行,成本很低,安全无毒,适合工业化生产;(1) The preparation method is simple and easy, the cost is very low, safe and non-toxic, and suitable for industrial production;

(2)使用该方法所制得的铜锌锡硫-硫化铜-铜锡硫薄膜性能好;(2) The copper-zinc-tin-sulfur-copper-sulfide-copper-tin-sulfur thin film prepared by this method has good performance;

(3)可广泛用于半导体薄膜的生产以及光催化领域。(3) It can be widely used in the production of semiconductor thin films and in the field of photocatalysis.

以下将结合附图对本发明的构思、具体结构及产生的技术效果作进一步说明,以充分地了解本发明的目的、特征和效果。The idea, specific structure and technical effects of the present invention will be further described below in conjunction with the accompanying drawings, so as to fully understand the purpose, features and effects of the present invention.

附图说明Description of drawings

图1是实施例1制得的铜锌锡硫-硫化铜-铜锡硫薄膜的X射线衍射图;Fig. 1 is the X-ray diffraction pattern of the copper zinc tin sulfur-copper sulfide-copper tin sulfur thin film that embodiment 1 makes;

图2是实施例1制得的薄膜的10000倍扫描电子显微镜照片;Fig. 2 is the 10000 times scanning electron micrograph of the thin film that embodiment 1 makes;

图3是实施例1制得的薄膜的50000倍扫描电子显微镜照片;Fig. 3 is the 50000 times scanning electron micrograph of the thin film that embodiment 1 makes;

图4是实施例2制得的薄膜的10000倍扫描电子显微镜照片;Fig. 4 is the 10000 times scanning electron micrograph of the thin film that embodiment 2 makes;

图5是实施例2制得的薄膜的50000倍扫描电子显微镜照片;Fig. 5 is the 50000 times scanning electron micrograph of the thin film that embodiment 2 makes;

图6是实施例1和实施例2制得的薄膜的电流-电压曲线,银/氯化银电极作参比电极,铂片(2x2cm2)作对电极,0.2摩尔/升的硫酸钠做电解液,测试光强为15mW cm-2,扫描速率为0.01V/s。Figure 6 is the current-voltage curves of the films prepared in Example 1 and Example 2. The silver/silver chloride electrode is used as the reference electrode, the platinum sheet (2x2cm 2 ) is used as the counter electrode, and 0.2 mol/liter of sodium sulfate is used as the electrolyte , the test light intensity is 15mW cm -2 , and the scan rate is 0.01V/s.

具体实施方式Detailed ways

下面结合具体实施例,进一步阐述本发明。应理解,这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解,在阅读了本发明讲授的内容之后,本领域技术人员可以对本发明作各种改动或修改,这些等价形式同样落于本申请所附权利要求书所限定的范围。Below in conjunction with specific embodiment, further illustrate the present invention. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

实施例1Example 1

室温下分别配制0.02摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.02摩尔/升氯化亚锡、0.02摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用15摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗30分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.05V(相对于银/氯化银)条件下沉积45分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。将其命名为薄膜1。Prepare 0.02 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.02 mol/L stannous chloride, 0.02 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid respectively at room temperature Aqueous solutions, equal volumes of these solutions were uniformly mixed, and the pH was adjusted to 5. Wipe the Mo substrate with 15 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 30 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition for 45 minutes under the condition of constant voltage -1.05V (relative to silver/silver chloride), the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film. Name it Thin Film 1.

实施例2Example 2

室温下分别配制0.02摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用15摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗30分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.05V(相对于银/氯化银)条件下沉积45分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。将其命名为薄膜2。Prepare 0.02 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid respectively at room temperature Aqueous solutions, equal volumes of these solutions were uniformly mixed, and the pH was adjusted to 5. Wipe the Mo substrate with 15 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 30 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition for 45 minutes under the condition of constant voltage -1.05V (relative to silver/silver chloride), the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film. Name it Thin Film 2.

图1为本实施例合成的铜锌锡硫-硫化铜-铜锡硫薄膜的X射线衍射图。从图1中可以看出:该样品中同时存在铜锌锡硫(CZTS)、硫化铜(CuS)、铜锡硫(Cu3SnS4)。图中基片Mo的峰很强,使硫化物的峰显得很弱。Fig. 1 is the X-ray diffraction diagram of the copper zinc tin sulfur-copper sulfide-copper tin sulfur thin film synthesized in this example. It can be seen from Fig. 1 that copper zinc tin sulfur (CZTS), copper sulfide (CuS) and copper tin sulfur (Cu 3 SnS 4 ) are present in the sample at the same time. In the figure, the peak of Mo on the substrate is very strong, making the peak of sulfide appear very weak.

图2、图3、图4、图5为铜锌锡硫-硫化铜-铜锡硫薄膜的扫描电子显微镜(SEM)图片,分别对应10000x(薄膜1)、50000x(薄膜1)、10000x(薄膜2)、50000x(薄膜2)。从图2、图3、图4、图5中可以看出:铜锌锡硫-硫化铜-铜锡硫薄膜是由很小的颗粒团聚而成,其中薄膜1表面的颗粒倾向于聚集成更大的球状,薄膜2表面的颗粒倾向于聚集成短链状。Figure 2, Figure 3, Figure 4, and Figure 5 are the scanning electron microscope (SEM) pictures of copper zinc tin sulfur-copper sulfide-copper tin sulfur thin films, corresponding to 10000x (film 1), 50000x (film 1), 10000x (film 2), 50000x (Film 2). It can be seen from Fig. 2, Fig. 3, Fig. 4, and Fig. 5 that the copper-zinc-tin-sulfur-copper-tin-sulfur film is formed by agglomeration of very small particles, and the particles on the surface of the film 1 tend to aggregate into more Large spherical, particles on the surface of film 2 tend to aggregate into short chains.

图6为薄膜1和薄膜2的电流-电压曲线。银/氯化银电极作参比电极,铂片(2x2cm2)作对电极,0.2摩尔/升的硫酸钠做电解液,测试光强为15mW cm-2,扫描速率为0.01V/s。从图中可以看出,薄膜2的性能要比薄膜1的好,可能是因为这种短链结构增加了薄膜的比表面积。FIG. 6 is the current-voltage curves of film 1 and film 2. The silver/silver chloride electrode is used as the reference electrode, the platinum sheet (2x2cm 2 ) is used as the counter electrode, 0.2 mol/liter sodium sulfate is used as the electrolyte, the test light intensity is 15mW cm -2 , and the scan rate is 0.01V/s. It can be seen from the figure that the performance of film 2 is better than that of film 1, probably because the short chain structure increases the specific surface area of the film.

实施例3Example 3

室温下分别配制0.02摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为7。用15摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗20分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.5V(相对于银/氯化银)条件下沉积15分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid respectively at room temperature These solutions were uniformly mixed in equal volumes, and the pH was adjusted to 7. Wipe the Mo substrate with 15 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 20 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition at a constant voltage of -1.5V (relative to silver/silver chloride) for 15 minutes, the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例4Example 4

室温下分别配制0.02摩尔/升硝酸铜、0.03摩尔/升硝酸锌、0.02摩尔/升硫酸亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用12摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗10分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.05V(相对于银/氯化银)条件下沉积25分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper nitrate, 0.03 mol/L zinc nitrate, 0.02 mol/L stannous sulfate, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid aqueous solution respectively at room temperature , these solutions were uniformly mixed in equal volumes, and the pH was adjusted to 5. Wipe the Mo substrate with 12 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 10 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition at a constant voltage of -1.05V (relative to silver/silver chloride) for 25 minutes, the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例5Example 5

室温下分别配制0.02摩尔/升氯化铜、0.03摩尔/升氯化锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用12摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗20分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.3V(相对于银/氯化银)条件下沉积45分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper chloride, 0.03 mol/L zinc chloride, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L respectively at room temperature liter of tartaric acid aqueous solution, these solutions are uniformly mixed in equal volumes, and the pH is adjusted to 5. Wipe the Mo substrate with 12 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 20 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition for 45 minutes under the condition of a constant voltage of -1.3V (relative to silver/silver chloride), the samples were taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例6Example 6

室温下分别配制0.02摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为2。用15摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗5分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.3V(相对于银/氯化银)条件下沉积35分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid respectively at room temperature Aqueous solutions, equal volumes of these solutions were uniformly mixed, and the pH was adjusted to 2. Wipe the Mo substrate with 15 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 5 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition at a constant voltage of -1.3V (relative to silver/silver chloride) for 35 minutes, the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例7Example 7

室温下分别配制0.02摩尔/升硝酸铜、0.03摩尔/升硝酸锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为6。用8摩尔/升的氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗30分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.5V(相对于银/氯化银)条件下沉积25分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper nitrate, 0.03 mol/L zinc nitrate, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid at room temperature Mix these solutions uniformly in equal volumes and adjust the pH to 6. Wipe the Mo substrate with 8 mol/L NaOH solution and ultrasonically clean it in ethanol and water for 30 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition at a constant voltage of -1.5V (relative to silver/silver chloride) for 25 minutes, the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例7Example 7

室温下分别配制0.02摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用12摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗30分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-0.8V(相对于银/氯化银)条件下沉积60分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid respectively at room temperature Aqueous solutions, equal volumes of these solutions were uniformly mixed, and the pH was adjusted to 5. Wipe the Mo substrate with 12 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 30 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition at a constant voltage of -0.8V (relative to silver/silver chloride) for 60 minutes, the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例8Example 8

室温下分别配制0.02摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用15摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗30分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-0.8V(相对于银/氯化银)条件下沉积35分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L tartaric acid respectively at room temperature Aqueous solutions, equal volumes of these solutions were uniformly mixed, and the pH was adjusted to 5. Wipe the Mo substrate with 15 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 30 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition for 35 minutes under the condition of constant voltage -0.8V (relative to silver/silver chloride), the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例9Example 9

室温下分别配制0.02摩尔/升氯化铜、0.03摩尔/升氯化锌、0.02摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.2摩尔/升柠檬酸三钠以及0.1摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用15摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗20分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.3V(相对于银/氯化银)条件下沉积25分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.02 mol/L copper chloride, 0.03 mol/L zinc chloride, 0.02 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.2 mol/L trisodium citrate and 0.1 mol/L respectively at room temperature liter of tartaric acid aqueous solution, these solutions are uniformly mixed in equal volumes, and the pH is adjusted to 5. Wipe the Mo substrate with 15 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 20 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition at a constant voltage of -1.3V (relative to silver/silver chloride) for 25 minutes, the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例10Example 10

室温下分别配制0.015摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.015摩尔/升氯化亚锡、0.03摩尔/升硫代硫酸钠、0.12摩尔/升柠檬酸三钠以及0.06摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为5。用15摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗30分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.05V(相对于银/氯化银)条件下沉积45分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.015 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.015 mol/L stannous chloride, 0.03 mol/L sodium thiosulfate, 0.12 mol/L trisodium citrate and 0.06 mol/L tartaric acid respectively at room temperature Aqueous solutions, equal volumes of these solutions were uniformly mixed, and the pH was adjusted to 5. Wipe the Mo substrate with 15 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 30 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition for 45 minutes under the condition of constant voltage -1.05V (relative to silver/silver chloride), the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

实施例11Example 11

室温下分别配制0.09摩尔/升硫酸铜、0.03摩尔/升硫酸锌、0.09摩尔/升氯化亚锡、0.15摩尔/升硫代硫酸钠、0.3摩尔/升柠檬酸三钠以及0.24摩尔/升酒石酸水溶液,将这些溶液等体积均匀混合,调节pH为6。用12摩尔/升的浓氢氧化钠溶液擦拭Mo基片,并在乙醇和水中分别超声清洗30分钟。将基片放进已经搅拌均匀的电解液中。在恒定电压-1.05V(相对于银/氯化银)条件下沉积45分钟后,将样品取出,用大量去离子水冲洗后吹干。所得到的薄膜在氩气或者氮气中350℃煅烧1h,得到的样品即为铜锌锡硫-硫化铜-铜锡硫薄膜。Prepare 0.09 mol/L copper sulfate, 0.03 mol/L zinc sulfate, 0.09 mol/L stannous chloride, 0.15 mol/L sodium thiosulfate, 0.3 mol/L trisodium citrate and 0.24 mol/L tartaric acid at room temperature Mix these solutions uniformly in equal volumes and adjust the pH to 6. Wipe the Mo substrate with 12 mol/L concentrated NaOH solution and ultrasonically clean it in ethanol and water for 30 min, respectively. Put the substrate into the electrolyte that has been stirred evenly. After deposition for 45 minutes under the condition of constant voltage -1.05V (relative to silver/silver chloride), the sample was taken out, rinsed with a large amount of deionized water and dried. The obtained film is calcined at 350° C. for 1 hour in argon or nitrogen, and the obtained sample is a copper zinc tin sulfur-copper sulfide-copper tin sulfur film.

以上详细描述了本发明的较佳具体实施例。应当理解,本领域的普通技术人员无需创造性劳动就可以根据本发明的构思作出诸多修改和变化。因此,凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案,皆应在由权利要求书所确定的保护范围内。The preferred specific embodiments of the present invention have been described in detail above. It should be understood that those skilled in the art can make many modifications and changes according to the concept of the present invention without creative efforts. Therefore, all technical solutions that can be obtained by those skilled in the art based on the concept of the present invention through logical analysis, reasoning or limited experiments on the basis of the prior art shall be within the scope of protection defined by the claims.

Claims (10)

1.一种铜锌锡硫-硫化铜-铜锡硫薄膜的合成方法,其特征在于,合成步骤如下:1. a synthetic method of copper zinc tin sulfur-copper sulfide-copper tin sulfur thin film is characterized in that, synthetic steps are as follows: (1)配制电解液:将铜盐、锌盐、锡盐、硫代硫酸钠、柠檬酸三钠和酒石酸分别溶解到水中,然后再混合,混合均匀后调节pH值;(1) Preparation of electrolyte: Dissolve copper salt, zinc salt, tin salt, sodium thiosulfate, trisodium citrate and tartaric acid into water respectively, then mix them, adjust the pH value after mixing evenly; (2)清洗基片:金属Mo片作为基片,用氢氧化钠溶液擦拭表面,除去表面锈迹,然后在乙醇、去离子水中逐次进行超声清洗,除去表面油渍;(2) Clean the substrate: metal Mo sheet is used as the substrate, and the surface is wiped with sodium hydroxide solution to remove surface rust, and then ultrasonically cleaned in ethanol and deionized water one by one to remove surface oil stains; (3)电化学沉积:将清洗好的基片放入已经配制好的电解液中,设定沉积电压和时间并开始,沉积结束后将基片取出,用大量的去离子水和乙醇冲洗并吹干;(3) Electrochemical deposition: Put the cleaned substrate into the prepared electrolyte, set the deposition voltage and time and start, take out the substrate after deposition, rinse with a large amount of deionized water and ethanol and blow dry; (4)将步骤(3)得到的样品在氮气或者氩气中煅烧1小时,得到铜锌锡硫-硫化铜-铜锡硫薄膜。(4) Calcining the sample obtained in step (3) in nitrogen or argon for 1 hour to obtain a copper zinc tin sulfur-copper sulfide-copper tin sulfur film. 2.如权利要求1所述的合成方法,其特征在于,所述步骤(1)中,以摩尔计,铜盐:锌盐:锡盐:硫代硫酸钠:柠檬酸三钠:酒石酸=0.5~3:1:0.5~3:1~5:4~10:2~8。2. The synthesis method as claimed in claim 1, characterized in that, in the step (1), in terms of moles, copper salt: zinc salt: tin salt: sodium thiosulfate: trisodium citrate: tartaric acid=0.5 ~3:1:0.5~3:1~5:4~10:2~8. 3.如权利要求1所述的合成方法,其特征在于,所述步骤(1)中,以摩尔计,铜盐:锌盐:锡盐:硫代硫酸钠:柠檬酸三钠:酒石酸=2:3:2:3:20:10。3. The synthesis method as claimed in claim 1, characterized in that, in the step (1), in terms of moles, copper salt: zinc salt: tin salt: sodium thiosulfate: trisodium citrate: tartaric acid=2 :3:2:3:20:10. 4.如权利要求1所述的合成方法,其特征在于,所述步骤(1)中铜盐为硫酸铜、硝酸铜或氯化铜。4. The synthesis method according to claim 1, wherein the copper salt in the step (1) is copper sulfate, copper nitrate or copper chloride. 5.如权利要求1所述的合成方法,其特征在于,所述步骤(1)中锌盐为硫酸锌、硝酸锌或氯化锌。5. The synthesis method according to claim 1, characterized in that the zinc salt in the step (1) is zinc sulfate, zinc nitrate or zinc chloride. 6.如权利要求1所述的合成方法,其特征在于,所述步骤(1)中锡盐为氯化亚锡或硫酸亚锡。6. The synthesis method according to claim 1, wherein the tin salt in the step (1) is stannous chloride or stannous sulfate. 7.如权利要求1所述的合成方法,其特征在于,所述步骤(1)中调节pH值范围为2~7。7. The synthesis method according to claim 1, characterized in that, in the step (1), the pH value is adjusted in the range of 2-7. 8.如权利要求1-6任一项所述的合成方法,其特征在于,所述步骤(2)中的氢氧化钠溶液浓度为1~15摩尔/升,超声时间为5~30分钟。8. The synthesis method according to any one of claims 1-6, characterized in that the concentration of the sodium hydroxide solution in the step (2) is 1-15 mol/liter, and the ultrasonic time is 5-30 minutes. 9.如权利要求1-6任一项所述的合成方法,其特征在于,所述步骤(3)中的电化学沉积过程中所用的电压是-0.8V~-1.5V,沉积时间是15~60分钟。9. The synthesis method according to any one of claims 1-6, characterized in that, the voltage used in the electrochemical deposition process in the step (3) is -0.8V~-1.5V, and the deposition time is 15 ~60 minutes. 10.如权利要求1-6任一项所述的合成方法,其特征在于,所述步骤(4)中的煅烧温度范围为200~600℃。10. The synthesis method according to any one of claims 1-6, characterized in that the calcination temperature range in the step (4) is 200-600°C.
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CN104409566A (en) * 2014-11-06 2015-03-11 云南师范大学 Two-electrode electrochemical preparation method of copper zinc tin sulfide thin film material

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B.S.PAWAR ET AL.: "《Effect of complexing agent on the properties of electrochemically deposited Cu2ZnSnS4 (CZTS) thin films》", 《APPLIED SURFACE SCIENCE》 *
S.M.PAWAR ET AL.: "《Fabrication of Cu2ZnSnS4 Thin Film Solar Cell Using Single Step Electrodeposition Method》", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 *
S.M.PAWAR ET AL.: "《Single step electrosynthesis of Cu2ZnSnS4 (CZTS) thin films for solar cell application》", 《ELECTROCHIMICA ACTA》 *

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409566A (en) * 2014-11-06 2015-03-11 云南师范大学 Two-electrode electrochemical preparation method of copper zinc tin sulfide thin film material

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