CN103911656B - Crystal growth device and crystal manufacturing method - Google Patents
Crystal growth device and crystal manufacturing method Download PDFInfo
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- CN103911656B CN103911656B CN201310031697.4A CN201310031697A CN103911656B CN 103911656 B CN103911656 B CN 103911656B CN 201310031697 A CN201310031697 A CN 201310031697A CN 103911656 B CN103911656 B CN 103911656B
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- Prior art keywords
- heat reflection
- crucible cover
- crucible
- angle
- reflection ring
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- 239000013078 crystal Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 235000014347 soups Nutrition 0.000 claims abstract description 19
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 17
- 230000004308 accommodation Effects 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 8
- 230000008646 thermal stress Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000015271 coagulation Effects 0.000 claims description 5
- 238000005345 coagulation Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052571 earthenware Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 10
- 230000001154 acute effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A crystal growth apparatus, comprising: a crucible, a crucible cover, a heat insulation unit and a plurality of heat reflection rings. The crucible cover is arranged on the crucible and jointly surrounds and defines an accommodating space which is communicated with the outside through the opening. The heat insulation unit is arranged on the outer surface of the crucible cover. The heat reflection rings are arranged in the accommodating space and are respectively suspended on the crucible cover, any two adjacent heat reflection rings are arranged at intervals in an equidistance mode, and a first angle is formed between each heat reflection ring and the crucible cover. The heat reflection rings can deform in the heating process of the crystal growth device, so that the first angle is changed to a second angle. Therefore, the temperature gradient distribution on the surface of the molten soup can be adjusted by arranging the plurality of heat reflection rings. In addition, the invention also provides a crystal manufacturing method.
Description
Technical field
The present invention is relevant a kind of Crystal growth device and crystal manufacture method, and can adjust in crucible in particular to one
The Crystal growth device of molten soup surface temperature ladder distribution and crystal manufacture method.
Background technology
In order to manufacture sapphire wafer, typical way is, the Crystal growth device being received in high-purity mangesium oxide aluminum feedstock is added
Heat to or exceed Celsius 2100 degree to melt this raw material, then experience that a succession of program such as drills through, circle grinds, cuts into slices, grinds, hot at
Reason and polishing are to obtain single-crystal wafer.
When manufacturing sapphire single-crystal, control bubble and control dislocation for being very significant considering that in quality.Dislocation can
By utilizing engraving method to be measured after crystal growth.Dislocation is primarily due to thermal stress and produces, and thermal stress is main
It is to occur at crystals when growing brilliant and outside temperature difference.Therefore, dislocation density can be controlled by controlling thermal stress.
For example, in passing experience, owing to Crystal growth device is typically at its side and bottom-heated, therefore cause
Between the top and bottom of crystal, there is thermograde.Thermal stress produced by said temperature gradient ultimately results in dislocation and affects
Crystal quality.
Then, the present invention, for improving disadvantages mentioned above, is that spy concentrates on studies and coordinates the utilization of scientific principle, finally proposes one and set
Count rationally and be effectively improved the present invention of disadvantages mentioned above.
Summary of the invention
For solving above-mentioned technical problem, present invention is primarily targeted at a kind of Crystal growth device of offer and crystal manufacturer
Method, it can effectively adjust the temperature ladder distribution on molten soup surface.
The embodiment of the present invention provides a kind of Crystal growth device, including: a crucible；One crucible cover, it has defined an opening, this earthenware
Crucible lid is installed on this crucible, and this crucible surrounds with this crucible cover and defines an accommodation space, and this accommodation space is through this opening
And outside being communicated in；One insulating unit, it is arranged on the outer surface of this crucible cover；And multiple heat reflection ring, it is arranged at this
Accommodation space is interior and is suspended to this crucible cover respectively, and wantonly two adjacent heat reflection rings are set in distance, and the plurality of heat is anti-
Penetrating and be respectively formed with one first angle between ring and this crucible cover, the plurality of heat reflection ring can be in this Crystal growth device heating process
Middle generation deformation, so that the first angle between each heat reflection ring and this crucible cover can be changed to one second angle.
According to above-mentioned design, farther including multiple shaft-like fixture, the plurality of fixture is installed in this crucible cover,
The plurality of heat reflection ring is positioned the plurality of fixture and is suspended to this crucible cover, and the plurality of heat reflection ring and institute
State and leave clearance between multiple fixture, to allow the angle change between the plurality of heat reflection ring and this crucible cover.
According to above-mentioned design, farther including multiple keeper, each heat reflection ring is formed with multiple through hole, each through hole
The size being smaller in size than every positioning piece, the plurality of heat reflection ring is solid with the plurality of via the plurality of keeper respectively
The cooperation of locking member and be suspended to this crucible cover.
According to above-mentioned design, each heat reflection ring plate-shaped and have relative one first with one second, long in this
In brilliant device heating process, first of each heat reflection ring is produced different by different thermal stress from second respectively
Thermal expansion, so that the first angle between each heat reflection ring and this crucible cover can be changed to this second angle.
According to above-mentioned design, this first angle is the straight angle, and this second angle is acute angle.
According to above-mentioned design, the plurality of heat reflection ring is by made by iridium, tungsten or molybdenum.
According to above-mentioned design, between the plurality of heat reflection ring and this crucible cover during each this second angle of formation, Mei Yire
The interior of tore of reflection is gradually incremented by towards the direction away from this crucible cover adjacent to this crucible cover without leave.
According to above-mentioned design, this insulating unit has the ring-type heat shield of multilayer, and described multilayer insulation sheet the most sequentially stacks
On the outer surface of this crucible cover, and described multilayer insulation sheet interior without leave adjacent to this crucible cover towards the direction away from this crucible cover
Successively it is incremented by.
The embodiment of the present invention separately provides a kind of crystal manufacture method, and its step includes: provide this length as above brilliant dress
Put；A raw material is contained in this crucible；The plurality of heat reflection ring is suspended to below this crucible cover, and installs on this crucible cover
This insulating unit, is then installed in this crucible cover on this crucible, makes the plurality of heat reflection ring be positioned at this accommodation space；With
And carry out the heating of this Crystal growth device, so that soup is melted in this raw materials melt formation one, in this Crystal growth device heating process, described many
Individual heat reflection ring produces deformation because being heated so that the first angle between each heat reflection ring and this crucible cover gradually change to
This second angle, and then the vertical temperature ladder adjusting this molten soup surface is distributed and level temperature ladder is distributed.
In sum, Crystal growth device that the embodiment of the present invention is provided and crystal manufacture method, it can improve process parameter
Adjustable interval, to control the temperature ladder distribution of molten soup surface, and then reduce and expand the probability that shoulder grows rapidly, reach to reduce the heat of crystal
Stress is concentrated, to promote the effect of crystal quality.
It is further understood that inventive feature and technology contents for enabling, refers to below in connection with the present invention specifically
Bright and accompanying drawing, but these explanations are only for the present invention is described with institute's accompanying drawings, rather than the interest field of the present invention is appointed
What restriction.
Accompanying drawing explanation
Figure 1A is the Crystal growth device of the present invention floor map () when not heating.
Figure 1B is the sectional perspective schematic diagram of Figure 1A.
Fig. 1 C is the Crystal growth device of the present invention floor map (two) when not heating.
Fig. 1 D is the Crystal growth device of the present invention floor map (three) when not heating.
Fig. 2 A is the floor map () after Crystal growth device of the present invention heating.
Fig. 2 B is the floor map (two) after Crystal growth device of the present invention heating.
Fig. 3 is the step schematic diagram of crystal manufacture method of the present invention.
Wherein, description of reference numerals is as follows:
100 Crystal growth device
1 crucible
11 accommodation spaces
2 crucible covers
21 openings
22 through holes
3 insulating units
31 heat shields
4 heat reflection rings
41 first
42 second
43 extensions
44 through holes
5 hanging units
51 fixtures (such as: screw)
52 keepers (such as: nut)
200 melt soup
201 coagulations
Detailed description of the invention
The present invention is a kind of Crystal growth device and crystal manufacture method.First, for the long crystalline substance being used in crystal manufacture method
Device makees a brief description, thereafter, followed by introducing crystal manufacture method.
Referring to shown in Figure 1A and Figure 1B, it is one embodiment of the invention, and the present embodiment provides a kind of Crystal growth device
100, including: crucible 1, crucible cover 2, insulating unit 3, multiple heat reflection ring 4 and a hanging unit 5.Wherein, above-mentioned earthenware
The utensil that crucible 1 is commonly used for industry, therefore do not described in detail at this.
An opening 21 has been defined at the substantial middle position of described crucible cover 2, and crucible cover 2 is in the position shape on opening 21 side
Become to have multiple through hole 22.Described crucible cover 2 is installed on crucible 1, houses so that crucible 1 defines one with crucible cover 2 encirclement
Space 11, and outside described accommodation space 11 can be communicated in through opening 21.
Described insulating unit 3 has the ring-type heat shield of multilayer 31, and described multilayer insulation sheet 31 the most sequentially stacks and is arranged at
On the outer surface of crucible cover 2, and the internal diameter of described multilayer insulation sheet 31 is all more than the opening 21 of crucible cover 2.Wherein, described many
Layer heat shield 31 is in graphic as a example by the stacking that contacts with each other, but is not excluded for described multilayer insulation sheet 31 and stacks at each interval
Arrange.Furthermore, the interior of described multilayer insulation sheet 31 is successively incremented by towards the direction away from crucible cover 2 adjacent to crucible cover 2, the most without leave
Being to say, the opening 21 of described crucible cover 2 will not be insulated unit 3 and be covered.And the outer rim of described multilayer insulation sheet 31 is substantially
Trim with the outer rim of crucible cover 2.
Thus, the setting by insulating unit 3 of the described Crystal growth device 100, so that the heat energy in crucible 1 is by crucible cover 2
Stop with insulating unit 3 and outside being less susceptible to via diverging in, and then increase heat insulation effect.Furthermore, beyond described crucible cover 2
Thermograde is affected by insulating unit 3 and is presented the trend that is slowly gradually reduced, is beneficial to follow-up relevant seeding step.
Described heat reflection ring 4 is the most plate-shaped and is heat-resisting by iridium, tungsten or molybdenum etc. and has the material institute of certain ductility
Make.Furthermore, for purposes of illustration only, the present embodiment is to be used using the heat reflection ring 4 shown in Figure 1A as following introduction, but in reality
During application, heat reflection ring 4 also can be adjusted to other patterns according to designer's demand.
For example, referring to shown in Fig. 1 C and Fig. 1 D, described heat reflection ring 4 can edge or outer rim be prominent in the inner is formed
One extension 43, to change the thickness of heat reflection ring 4, and then be applicable to follow-up adjustment melt soup surface temperature ladder distribution.Or, institute
State heat reflection ring 4 and also can form the structure (not shown) such as tubulose.
Referring again to Figure 1A and Figure 1B, described heat reflection ring 4 is suspended to crucible cover 2 respectively and is arranged in accommodation space 11,
And wantonly two adjacent heat reflection rings 4 are in being equidistantly spaced setting, reach heat insulation effect with the spacing by described two heat reflection rings 4
Really.Respectively being formed with one first angle between the plurality of heat reflection ring 4 and crucible cover 2, wherein, above-mentioned first angle is in this enforcement
In example as a example by the straight angle (180 degree).
In more detail, in Crystal growth device 100 heating process, the plurality of heat reflection ring 4 can be by the structure of itself
Design produces deformation, so that the first angle (such as Figure 1A) between each heat reflection ring 4 and crucible cover 2 can be changed to one second
Angle (such as Fig. 2 A).Wherein, above-mentioned second angle is preferably acute angle (less than 90 degree).And described second angle except Fig. 2 A institute in
Except in the case of Xian, heat reflection ring 4 also can be designed by different structures and form situation as shown in Figure 2 B, in other words, actual
State can elect according to designer's demand.
Should be noted that, the second angle shown in Fig. 2 A is preferably embodiment, say, that when the plurality of heat is anti-
Penetrate between ring 4 and crucible cover 2 each when forming the second angle, each heat reflection ring 4 interior without leave adjacent to crucible cover 2 towards away from crucible
The direction of lid 2 is gradually incremented by.Thus, the coagulation 201 being condensed in heat reflection ring 4 surface will the landing along heat reflection ring 4 surface
To outside left (that is, as Fig. 3, coagulation 201 is drained to crucible 1 adjacent sidewalls), and then avoid condensing impurity drippage
Problem produces.
And relevant heat reflection ring 4 by which kind of structure design to produce deformation when Crystal growth device 100 heats, following act one
Individual embodiment is described, but is not limited thereto.
Each heat reflection ring 4 has one first relative face 41 and one second face 42, is designed by the thickness of heat reflection ring 4
So that heat energy is after the first face 41 is transferred to the second face 42, the first face 41 produces different thermal expansion effects from the second face 42.
Specifically, when the first face 41 receives heat energy, transferring heat energy can be carried out via the thickness between the first face 41 and the second face 42, make
Heat energy dissipates from the first face 41；And the heat energy received by the second face 42 is to distribute via the air above it；Due to
Simultaneously 41 is different from the heat eliminating medium in the second face 42 so that in Crystal growth device 100 heating process, the of each heat reflection ring 4
Simultaneously 41 produced different thermal expansions by different thermal stress respectively from the second face 42.Degree of thermal expansion such as the second face 42
More than the degree of thermal expansion in the first face 41, the first angle between each heat reflection ring 4 and crucible cover 2 can be made to be changed to second
Angle.
Additionally, heat reflection ring 4 thickness in the present embodiment preferably present from outside to inside incremental, successively decrease or other rule
Then shape design, so that heat reflection ring 4 produces homogeneous deformation when heating.But when reality is applied, it is not excluded that heat reflection ring 4 in
Heating produces the situation of heterogeneous deformation.Furthermore, outside the thickness design of heat extraction tore of reflection 4, it is possible in the table of each heat reflection ring 4
Face (first face 41 or the second face 42) is formed with at least one indentation (not shown).Make in Crystal growth device 100 heating process, each
Heat reflection ring 4 produces stress by its indentation position and concentrates, and makes the first angle energy between each heat reflection ring 4 and crucible cover 2
It is changed to the second angle.
And the mode of crucible cover 2 it is suspended to about above-mentioned heat reflection ring 4, following act one hanging unit 5 is described, but
It is not limited to this.Described hanging unit 5 include multiple shaft-like fixture 51 (such as: screw) and with fixture 51 collocation multiple
Keeper 52 (such as: nut).Furthermore, each heat reflection ring 4 is formed with multiple through hole 44, and being smaller in size than of each through hole 44 is each
The size of keeper 52, and through hole 44 quantity of each heat reflection ring 4 is equal to the quantity of described fixture 51.
Described fixture 51 install (such as: wear) in the through hole 22 of crucible cover 2, and fixture 51 is piercing in crucible cover 2
Position sequentially through the through hole 44 of the plurality of heat reflection ring 4.When fixture 51 passes the through hole 44 of heat reflection ring 4, with
Keeper 52 install (such as: screw lock) in fixture 51, to reach the effect of block heat reflection ring 4, that is, the plurality of heat reflection
Ring 4 will be positioned the plurality of fixture 51 by keeper 52, and then be suspended to crucible cover 2.
Wherein, between each heat reflection ring 4 and each fixture 51, leave clearance, to allow the plurality of heat reflection ring 4
And the angle change between crucible cover 2.In other words, described clearance is provided that heat reflection ring 4 produces space required during deformation, with
Heat reflection ring 4 is avoided to produce interference because of deformation with fixture 51 and cause damage.
Below Crystal growth device 100 has been introduced, following then for how described Crystal growth device 100 being used in crystal system
The method of making is described.Referring to shown in Figure 1A and Fig. 3, the step of crystal manufacture method includes the following:
Implement steady step: provide Crystal growth device as above 100 (at this with the Crystal growth device 100 shown in Figure 1A
As a example by), and in crucible 1, contain a raw material (not shown).Thereafter, the plurality of heat reflection ring 4 is suspended in midair by hanging unit 5
Below crucible cover 2, and on crucible cover 2, install insulating unit 3, then crucible cover 2 is installed on crucible 1, makes the plurality of
Heat reflection ring 4 is positioned at accommodation space 11.Wherein, the material of above-mentioned raw materials can be aluminum oxide, silicon or other materials, at this not
It is any limitation as.
Implement a heating steps: carry out the heating of Crystal growth device 100, so that soup 200 is melted in raw materials melt formation one.And in length
In brilliant device 100 heating process, the plurality of heat reflection ring 4 produces deformation because being heated, so that each heat reflection ring 4 and crucible
The first angle between lid 2 gradually changes to the second angle, and then adjusts vertical temperature ladder distribution and the level temperature on molten soup 200 surface
Ladder distribution.
In more detail, the first angle between each heat reflection ring 4 and crucible cover 2 gradually changes to the second angle
Time, the interior of each heat reflection ring 4 is gradually incremented by towards the direction away from crucible cover 2 adjacent to crucible cover 2 without leave, and molten soup 200 because of
Evaporating and be condensed in the coagulation 201 of each heat reflection ring 4, it is along each heat reflection ring 4 surface landing to the outside of molten soup 200
Position, and then avoid the problem condensing impurity drippage to produce.
Thereafter, molten soup 200 is carried out seeding step to form crystal (figure slightly), wherein, due to insulating unit 3 and heat reflection
The setting of ring 4, makes Crystal growth device 100 produce with the outside facts not having temperature decrease in the inside of crucible 1, to reach to promote
The effect of crystal quality.And belong to, about concrete seeding step, the technological means that industry is conventional, do not described in detail at this.
More additionally, about the number of plies, the number of plies of heat reflection ring 4 and heat reflection ring 4 and the crucible of above-mentioned heat shield 31
The angle of lid 2, the distribution situation of its molten soup 200 surface temperature ladder of can arranging in pairs or groups and adjusted.
(possible effect of embodiment)
According to embodiments of the present invention, above-mentioned Crystal growth device and crystal manufacture method, it can improve the adjustable of process parameter
Interval, to control the temperature ladder distribution of molten soup surface, and then reduces the probability that expansion shoulder grows rapidly, reaches to reduce the thermal stress collection of crystal
In with promote crystal quality effect.Furthermore, Crystal growth device can accompany acute angle by heat reflection ring and crucible cover especially, and each
The interior of heat reflection ring is gradually incremented by towards the direction away from crucible cover adjacent to crucible cover without leave, to reach to avoid condensation impurity effect long
Brilliant effect.
The foregoing is only embodiments of the invention, it is also not used to limit to the scope of patent protection of the present invention.
Claims (9)
1. a Crystal growth device, it is characterised in that including:
One crucible；
One crucible cover, it has defined an opening, and this crucible cover is installed on this crucible, and this crucible surrounds definition with this crucible cover
Go out an accommodation space, outside this accommodation space is communicated in through this opening；
One insulating unit, it is arranged on the outer surface of this crucible cover；And
Multiple heat reflection rings, it is arranged in this accommodation space and is suspended to respectively this crucible cover, and wantonly two adjacent heat reflections
Ring is set in distance, and is respectively formed with one first angle between the plurality of heat reflection ring and this crucible cover, and the plurality of heat is anti-
Penetrate ring and can produce deformation in this Crystal growth device heating process, so that the first angle between each heat reflection ring and this crucible cover
Can be changed to one second angle, between the plurality of heat reflection ring and this crucible cover during each this second angle of formation, each heat is anti-
Penetrate the interior of ring to be gradually incremented by towards the direction away from this crucible cover adjacent to this crucible cover without leave.
2. Crystal growth device as claimed in claim 1, it is characterised in that farther include multiple shaft-like fixture is described many
Individual fixture is installed in this crucible cover, and the plurality of heat reflection ring is positioned the plurality of fixture and is suspended to this crucible cover,
And leave clearance between the plurality of heat reflection ring and the plurality of fixture, to allow the plurality of heat reflection ring and this earthenware
Angle change between crucible lid.
3. Crystal growth device as claimed in claim 2, it is characterised in that farther include multiple keeper, each heat reflection ring
Being formed with multiple through hole, the size being smaller in size than every positioning piece of each through hole, the plurality of heat reflection ring is respectively via institute
State multiple keeper and be suspended to this crucible cover with the plurality of coordinating of fixture.
4. Crystal growth device as claimed in claim 2, it is characterised in that each heat reflection ring is plate-shaped and has relative 1 the
Simultaneously with one second, in this Crystal growth device heating process, first of each heat reflection ring is subject to not respectively with second
With thermal stress and produce different thermal expansions, so that the first angle between each heat reflection ring and this crucible cover can be changed to
This second angle.
5. Crystal growth device as claimed in claim 2, it is characterised in that this first angle is the straight angle, and this second angle is sharp
Angle.
6. the Crystal growth device as according to any one of claim 1 to 5, it is characterised in that the plurality of heat reflection ring be by iridium,
Made by tungsten or molybdenum.
7. the Crystal growth device as according to any one of claim 1 to 5, it is characterised in that it is ring-type that this insulating unit has multilayer
Heat shield, described multilayer insulation sheet is the most sequentially stacked on the outer surface of this crucible cover, and the internal diameter of described multilayer insulation sheet
Successively it is incremented by towards the direction away from this crucible cover from this crucible cover neighbouring.
8. a crystal manufacture method, it is characterised in that step includes:
This Crystal growth device as claimed in claim 1 is provided；
A raw material is contained in this crucible；
The plurality of heat reflection ring is suspended to below this crucible cover, and on this crucible cover, installs this insulating unit, then should
Crucible cover is installed on this crucible, makes the plurality of heat reflection ring be positioned at this accommodation space；And
Carry out the heating of this Crystal growth device, so that soup is melted in this raw materials melt formation one, in this Crystal growth device heating process, described
Multiple heat reflection rings produce deformation because being heated, so that the first angle between each heat reflection ring and this crucible cover gradually changes
To this second angle, and the interior of each heat reflection ring is gradually incremented by towards the direction away from this crucible cover adjacent to this crucible cover without leave,
And then the vertical temperature ladder distribution adjusting this molten soup surface is distributed with level temperature ladder.
9. crystal manufacture method as claimed in claim 8, it is characterised in that this molten soup is condensed in each heat reflection because of evaporation
The coagulation of ring, it is along each heat reflection ring surface landing to the outside left of this molten soup.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101151192 | 2012-12-28 | ||
| TW101151192A TWI460319B (en) | 2012-12-28 | 2012-12-28 | Crystal growth device and ingot manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103911656A CN103911656A (en) | 2014-07-09 |
| CN103911656B true CN103911656B (en) | 2016-08-31 |
Family
ID=48893327
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310031697.4A Expired - Fee Related CN103911656B (en) | 2012-12-28 | 2013-01-28 | Crystal growth device and crystal manufacturing method |
| CN 201320046849 Expired - Fee Related CN203112960U (en) | 2012-12-28 | 2013-01-28 | Crystal growth device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320046849 Expired - Fee Related CN203112960U (en) | 2012-12-28 | 2013-01-28 | Crystal growth device |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN103911656B (en) |
| TW (1) | TWI460319B (en) |
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|---|---|---|---|---|
| CN85100534A (en) * | 1985-04-01 | 1986-08-06 | 中国科学院上海光学精密机械研究所 | The device of the terraced method growth of a kind of temperature high temperature crystal |
| WO1999016939A1 (en) * | 1997-09-30 | 1999-04-08 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
| CN201411509Y (en) * | 2009-06-26 | 2010-02-24 | 哈尔滨工大奥瑞德光电技术有限公司 | Single crystal furnace body for growth of big sapphire with size over 300 mm |
| TWI346155B (en) * | 2008-01-03 | 2011-08-01 | ||
| CN202247014U (en) * | 2011-09-28 | 2012-05-30 | 刘小梅 | Circular truncated cone-shaped heat shield for sapphire single crystal furnace |
| CN102534809A (en) * | 2010-12-20 | 2012-07-04 | 江西同人电子材料有限公司 | Crystal growth furnace |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101263082B1 (en) * | 2010-11-15 | 2013-05-09 | 주식회사 엘지실트론 | Sapphire Ingot Grower |
-
2012
- 2012-12-28 TW TW101151192A patent/TWI460319B/en not_active IP Right Cessation
-
2013
- 2013-01-28 CN CN201310031697.4A patent/CN103911656B/en not_active Expired - Fee Related
- 2013-01-28 CN CN 201320046849 patent/CN203112960U/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100534A (en) * | 1985-04-01 | 1986-08-06 | 中国科学院上海光学精密机械研究所 | The device of the terraced method growth of a kind of temperature high temperature crystal |
| WO1999016939A1 (en) * | 1997-09-30 | 1999-04-08 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
| TWI346155B (en) * | 2008-01-03 | 2011-08-01 | ||
| CN201411509Y (en) * | 2009-06-26 | 2010-02-24 | 哈尔滨工大奥瑞德光电技术有限公司 | Single crystal furnace body for growth of big sapphire with size over 300 mm |
| CN102534809A (en) * | 2010-12-20 | 2012-07-04 | 江西同人电子材料有限公司 | Crystal growth furnace |
| CN202247014U (en) * | 2011-09-28 | 2012-05-30 | 刘小梅 | Circular truncated cone-shaped heat shield for sapphire single crystal furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI460319B (en) | 2014-11-11 |
| CN203112960U (en) | 2013-08-07 |
| TW201425660A (en) | 2014-07-01 |
| CN103911656A (en) | 2014-07-09 |
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