CN103904167A - Method for preparing CdSxSey photoelectric material - Google Patents
Method for preparing CdSxSey photoelectric material Download PDFInfo
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- CN103904167A CN103904167A CN201410163697.4A CN201410163697A CN103904167A CN 103904167 A CN103904167 A CN 103904167A CN 201410163697 A CN201410163697 A CN 201410163697A CN 103904167 A CN103904167 A CN 103904167A
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- cdsxsey
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- 239000000463 material Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 19
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000084 colloidal system Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000005457 ice water Substances 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims abstract description 7
- 239000003822 epoxy resin Substances 0.000 claims abstract description 6
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 11
- 235000009262 Dracaena angustifolia Nutrition 0.000 claims description 7
- 240000007833 Dracaena angustifolia Species 0.000 claims description 7
- 238000013019 agitation Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract 3
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Chemical compound [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 229910003424 Na2SeO3 Inorganic materials 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 abstract 1
- 235000015921 sodium selenite Nutrition 0.000 abstract 1
- 239000011781 sodium selenite Substances 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for preparing a CdSxSey photoelectric material. The method comprises the steps that (1) 0.1079-0.1349 g of KBH4 is added to a 0.04-0.05 mol/L Na2SeO3 solution of 5 mL and a solution A is obtained through stirring the mixture under a water bath at the temperature of 30 DEG C to 40 DEG C; (2) 0.0394-0.0789 g of citric acid is added to a 0.04-0.05 mol/L Cd(NO3)2 solution of 5 mL so that a solution B can be prepared; (3) the solution A and the solution B are mixed, 0.0152-0.0229 g of CH4N2S is added to the mixture of the solution A and the solution B for dissolution so that a solution C can be obtained; (4) the solution C reacts for eight to ten hours in a thermostat at the temperature of 120 DEG C to 160 DEG C and a CdSxSey colloid is obtained, wherein x ranges from 0.43 to 0.48 and y ranges from 0.52 to 0.57; (5) the CdSxSey colloid serves as epoxy resin in an ice-water bath at 0 DEG C, heat treatment is conducted on conductive glass ITO for 20 minutes at the temperature of 90 DEG C, the conductive glass ITO serves as a hot medium, the ITO conductive face is coated with the CdSxSey through a cold-heat alternating coating method, and coating operation lasts for one minute; coating operation is repeated twice to five times. The method is low in cost, short in treatment time and free of pollution, the technology is convenient, and the obtained CdSxSey photoelectric material is good in photoelectric performance.
Description
Technical field
The present invention relates to a kind of CdS
xse
ythe preparation method of photoelectric material.
Background technology
Because charge carrier number in intrinsic semiconductor is few, photoconduction power is very low, if but mix therein micro-impurity, the photoconductivity of the extrinsic semiconductor forming can will strengthen greatly, so doping can change semi-conductive fundamental characteristics completely, can effectively control optical, electrical, the magnetic characteristic of semiconductor nanocrystal, directly cause the realization of the photoelectron devices such as high efficiency light-emitting device, rare magnetic spin electronic device, solar cell, for the extensive use of nanocrystal provides huge space.
CdSe is as II～VI compound semiconductor of direct band gap, have leakage current little, be difficult for deliquescence, good photoconductive property, be a kind of fabulous indoor temperature nucleus radiation detecting material.The people such as T.P.Brody are successfully developed into liquid crystal and the electroluminescent display of CdSe-TFT active matrix addressing, make CdSe aspect thin-film transistor, present wide application prospect.CdSe has cube and two kinds of structures of six sides, because of have with solar spectrum in the suitable bandwidth of visible light wave range (<1.7ev), therefore CdSe is the important source material of making heterojunction solar cell and photoelectrochemical solar cell.But but exist charge carrier number few as intrinsic semiconductor CdSe, the problem that photoconduction power is low, optical, electrical, the magnetic characteristic of mixing a certain amount of impurity and can effectively control CdSe nanocrystal, directly cause CdSe photoconductivity to strengthen.At present CdSe doping type mainly contains solvent-thermal method and prepares that Zn doping CdSe is nanocrystalline is conducive to improve its application aspect opto-electronic device, laser diode and other photochemistry and electrochemistry, electrochemical production Co doping CdSe film is conducive to the raising of photoelectric catalysis degrading performance, and the synthetic lead ion doping CdSe quantum dot of water method has good fluorescent characteristic.The research of CdSe doping vario-property becomes a focus, and that CdSe is entrained in the research of photoelectric conversion aspect of performance is actually rare.S also has a small amount of report at present to the doping of CdSe, as Pan Anlian etc. is combined with each other CdS and CdSe by the synthetic method of high temperature vapour phase, obtains CdS
xse
yternary alloy three-partalloy; Yu Chong etc. are by the wider CdS of chemical vapour deposition technique one-step synthesis nanobelt
xse
y.But these two kinds of method synthesis conditions are harsher, not easy to operate, the CdS simultaneously obtaining
xse
ymixed crystal degree is larger, and it is wayward that S mixes concentration.And hydro thermal method is prepared CdS
xse
yphotoelectric material there is not yet report.This technique simply, does not produce pollution, synthetic CdS
xse
ypresent colloidal and be convenient to prepare photoelectric device.Gained CdS
xse
yopen circuit photovoltage also larger, be a kind of photoelectric material preferably, be expected to as solar photocell material.
Summary of the invention
The object of this invention is to provide a kind of with the hydro-thermal legal system CdS that got everything ready
xse
y,the method of photoelectric material, wherein x=0.43～0.48, y=0.52～0.57.
Concrete steps are:
(1) be 0.04 ~ 0.05mol/L Na to 5mL concentration
2seO
3in solution, add 0.1079 ~ 0.1349g KBH
4, 30 ~ 40 ℃ of lower magnetic forces of water-bath stir and within 5 ~ 6 minutes, are mixed with A solution, control Na
2seO
3with KBH
4mol ratio=1:10.
(2) be 0.04 ~ 0.05mol/L Cd (NO to 5mL concentration
3)
2in solution, add 0.0394 ~ 0.0789g citric acid to be mixed with B solution, control Cd (NO
3)
2with citric acid mol ratio=1:1.
(3) under magnetic agitation, A solution mixes completely with B solution, and controlling Se:Cd mol ratio is 1:1, then adds 0.0152 ~ 0.0229g CH
4n
2s dissolves, and obtains C solution.
(4) C solution proceeds in hydrothermal reaction kettle, in 120 ~ 160 ℃ of insulating boxs, reacts 8 ~ 10 hours, and then cool to room temperature, obtains CdS
xse
ycolloid.
(5) by step (4) gained CdS
xse
ycolloid is placed in 0 ℃ of ice-water bath as epoxy resin, and electro-conductive glass ITO heat treatment in 90 ℃ of baking ovens adopts hot and cold alternately semar technique by CdS as hot material in 20 minutes
xse
yspread upon ITO conducting surface, smear 1 minute time.
(6) repeating step (5) 2 ~ 5 times, makes CdS
xse
yphotoelectric material, CdS under simulated solar irradiation
xse
yopen circuit photovoltage reach 0.2229 ~ 0.3678V.
The present invention is compared with other correlation technique, and outstanding feature is that hydro thermal method is prepared CdS
xse
ycolloid, and with hot and cold alternately semar technique by CdS
xse
ybe made into electrode.This preparation technology is easy, pollution-free, the CdS of preparation
xse
ysample has good photoelectric properties.
specific experiment method:
embodiment 1:
(1) be 0.04mol/L Na to 5mL concentration
2seO
3in solution, add 0.1079g KBH
4, 40 ℃ of lower magnetic forces of water-bath stir and within 5 minutes, are mixed with A solution.
(2) be 0.04mol/L Cd (NO to 5mL concentration
3)
2in solution, add 0.0394g citric acid to be mixed with B solution.
(3) under magnetic agitation, A solution and B solution are mixed completely, then add 0.019g CH
4n
2s dissolves, and obtains C solution.
(4) step (3) gained C solution is proceeded in hydrothermal reaction kettle, hydro-thermal reaction 8 hours in 120 ℃ of insulating boxs, then cool to room temperature, obtains CdS
xse
ycolloid.
(5) by step (4) gained CdS
xse
ycolloid is placed in 0 ℃ of ice-water bath and is cooled to epoxy resin, and electro-conductive glass ITO heat treatment in 90 ℃ of baking ovens adopts hot and cold alternately semar technique by CdS as hot material in 20 minutes
xse
yspread upon 1.8cm × 5cm × 0.11cm ITO conducting surface, smear 1 minute time.
(6) repeating step (5) 5 times, makes CdS
xse
yphotoelectric material, CdS under simulated solar irradiation
xse
yopen circuit photovoltage reach 0.2229V, the CdS of acquisition
xse
yin x=0.43, y=0.57.
embodiment 2:
(1) be 0.05mol/LNa to 5mL concentration
2seO
3in solution, add 0.1349g KBH
4, 30 ℃ of lower magnetic forces of water-bath stir and within 6 minutes, are mixed with A solution.
(2) be 0.05mol/L Cd (NO to 5mL concentration
3)
2in solution, add 0.0525g citric acid to be mixed with B solution.
(3) under magnetic agitation, A solution and B solution are mixed completely, then add 0.0152g CH
4n
2s dissolves, and obtains C solution.
(4) step (3) gained C solution is proceeded in hydrothermal reaction kettle, hydro-thermal reaction 8 hours in 120 ℃ of insulating boxs, then cool to room temperature, obtains CdS
xse
ycolloid.
(5) by step (4) gained CdS
xse
ycolloid is placed in 0 ℃ of ice-water bath and is cooled to epoxy resin, and ITO heat treatment in 90 ℃ of baking ovens adopts hot and cold alternately semar technique by CdS as hot material in 20 minutes
xse
yspread upon 1.8cm × 5cm × 0.11cm ITO conducting surface, smear 1 minute time.
(6) repeating step (5) 3 times, makes CdS
xse
yphotoelectric material, CdS under simulated solar irradiation
xse
yopen circuit photovoltage reach 0.3302V.Obtain CdS
xse
yin x=0.45, y=0.55.
embodiment 3:
(1) Na that is 0.04mol/L to 5mL concentration
2seO
3solution adds 0.1079g KBH
4, 40 ℃ of lower magnetic forces of water-bath stir and within 5 minutes, are mixed with A solution.
(2) Cd (NO that is 0.04mol/L to 5mL concentration
3)
2in solution, add 0.0394g citric acid to be mixed with B solution.
(3) under magnetic agitation, A solution and B solution are mixed completely, then add 0.019g CH
4n
2s dissolves, and obtains C solution.
(4) step (3) gained C solution is proceeded in hydrothermal reaction kettle, hydro-thermal reaction 10 hours in 120 ℃ of insulating boxs, then cool to room temperature, obtains CdS
xse
ycolloid.
(5) by step (4) gained CdS
xse
ycolloid is placed in 0 ℃ of ice-water bath cooling condensation glue, and ITO heat treatment in 90 ℃ of baking ovens adopts hot and cold alternately semar technique by CdS as hot material in 20 minutes
xse
yspread upon 1.8cm × 5cm × 0.11cm ITO conducting surface, smear 1 minute time.
(6) repeating step (5) 5 times, makes CdS
xse
yphotoelectric material, CdS under simulated solar irradiation
xse
yopen circuit photovoltage reach 0.3177V.Obtain CdS
xse
yin x=0.47, y=0.53.
embodiment 4:
(1) be 0.05mol/LNa to 5mL concentration
2seO
3in solution, add 0.1349g KBH
4, 30 ℃ of lower magnetic forces of water-bath stir and within 5 minutes, are mixed with A solution.
(2) be 0.05mol/L Cd (NO to 5mL concentration
3)
2in solution, add 0.0525g citric acid to be mixed with B solution.
(3) under magnetic agitation, A solution and B solution are mixed completely, then add 0.019g CH
4n
2s dissolves, and obtains C solution.
(4) step (3) gained C solution is proceeded in hydrothermal reaction kettle, hydro-thermal 10 hours in 160 ℃ of insulating boxs, then cool to room temperature, obtains CdS
xse
ycolloid.
(5) by step (4) gained CdS
xse
ycolloid is placed in 0 ℃ of ice-water bath and is cooled to epoxy resin, and ITO heat treatment in 90 ℃ of baking ovens adopts hot and cold alternately semar technique by CdS as hot material in 20 minutes
xse
yspread upon 1.8cm × 5cm × 0.11cm ITO conducting surface, smear 1 minute time.
(6) repeating step (5) 2 times, makes CdS
xse
yphotoelectric material, CdS under simulated solar irradiation
xse
yopen circuit photovoltage reach 0.3678V.Obtain CdS
xse
yin x=0.48, y=0.52.
Claims (1)
1. a CdS
xse
ythe preparation method of photoelectric material, wherein x=0.43～0.48, y=0.52～0.57, is characterized in that concrete steps are:
(1) be 0.04 ~ 0.05mol/L Na to 5mL concentration
2seO
3in solution, add 0.1079 ~ 0.1349g KBH
4, 30 ~ 40 ℃ of lower magnetic forces of water-bath stir and within 5 ~ 6 minutes, are mixed with A solution, control Na
2seO
3with KBH
4mol ratio=1:10;
(2) be 0.04 ~ 0.05mol/L Cd (NO to 5mL concentration
3)
2in solution, add 0.0394 ~ 0.0789g citric acid to be mixed with B solution, control Cd (NO
3)
2with citric acid mol ratio=1:1;
(3) under magnetic agitation, A solution mixes completely with B solution, and controlling Se:Cd mol ratio is 1:1, then adds 0.0152 ~ 0.0229g CH
4n
2s dissolves, and obtains C solution;
(4) step (3) gained C solution is proceeded in hydrothermal reaction kettle, in 120 ~ 160 ℃ of insulating boxs, react 8 ~ 10 hours, then cool to room temperature, obtains CdS
xse
ycolloid;
(5) by step (4) gained CdS
xse
ycolloid is placed in 0 ℃ of ice-water bath as epoxy resin, and electro-conductive glass ITO heat treatment in 90 ℃ of baking ovens adopts hot and cold alternately semar technique by CdS as hot material in 20 minutes
xse
yspread upon ITO conducting surface, smear 1 minute time;
(6) repeating step (5) 2 ~ 5 times, makes CdS
xse
yphotoelectric material, wherein x=0.43～0.48, y=0.52～0.57.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410163697.4A CN103904167B (en) | 2014-04-23 | 2014-04-23 | A kind of CdS xse ythe preparation method of photoelectric material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410163697.4A CN103904167B (en) | 2014-04-23 | 2014-04-23 | A kind of CdS xse ythe preparation method of photoelectric material |
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| Publication Number | Publication Date |
|---|---|
| CN103904167A true CN103904167A (en) | 2014-07-02 |
| CN103904167B CN103904167B (en) | 2016-04-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952961A (en) * | 2015-06-18 | 2015-09-30 | 常熟理工学院 | n-CdSxSe1-x film/graphene schottky junction solar cell |
| CN106409961A (en) * | 2016-11-23 | 2017-02-15 | 常熟理工学院 | N-Si/CdSSe laminated solar cell and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102471359A (en) * | 2009-08-04 | 2012-05-23 | 普瑞凯瑟安质提克斯公司 | Polymeric precursors for CIS and CIGS photovoltaics |
| CN102522454A (en) * | 2011-12-15 | 2012-06-27 | 广东工业大学 | Preparation method of CdSe nanocrystal semiconductor film |
| US20130174778A1 (en) * | 2012-01-06 | 2013-07-11 | Iowa State University Research Foundation, Inc. | Controlled Fabrication of Semiconductor-Metal Hybrid Nano-Heterostructures via Site-Selective Metal Photodeposition |
-
2014
- 2014-04-23 CN CN201410163697.4A patent/CN103904167B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102471359A (en) * | 2009-08-04 | 2012-05-23 | 普瑞凯瑟安质提克斯公司 | Polymeric precursors for CIS and CIGS photovoltaics |
| CN102522454A (en) * | 2011-12-15 | 2012-06-27 | 广东工业大学 | Preparation method of CdSe nanocrystal semiconductor film |
| US20130174778A1 (en) * | 2012-01-06 | 2013-07-11 | Iowa State University Research Foundation, Inc. | Controlled Fabrication of Semiconductor-Metal Hybrid Nano-Heterostructures via Site-Selective Metal Photodeposition |
Non-Patent Citations (2)
| Title |
|---|
| DANIEL OGERMANN ET AL: "CdSxSey/TiO2 Solar Cell Prepared with Sintered Mixture Deposition", 《OPEN JOURNAL OF PHYSICAL CHEMISTRY》 * |
| 陆彩飞等: "Cd(SxSe1-x)颜料的水热合成", 《硅酸盐通报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952961A (en) * | 2015-06-18 | 2015-09-30 | 常熟理工学院 | n-CdSxSe1-x film/graphene schottky junction solar cell |
| CN106409961A (en) * | 2016-11-23 | 2017-02-15 | 常熟理工学院 | N-Si/CdSSe laminated solar cell and preparation method thereof |
| CN106409961B (en) * | 2016-11-23 | 2018-06-29 | 常熟理工学院 | n-Si/CdSSe laminated solar cell and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN103904167B (en) | 2016-04-06 |
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