CN103904146A - Silicon-based thin-film solar cell with metal groove structure on bottom - Google Patents
Silicon-based thin-film solar cell with metal groove structure on bottom Download PDFInfo
- Publication number
- CN103904146A CN103904146A CN201410148419.1A CN201410148419A CN103904146A CN 103904146 A CN103904146 A CN 103904146A CN 201410148419 A CN201410148419 A CN 201410148419A CN 103904146 A CN103904146 A CN 103904146A
- Authority
- CN
- China
- Prior art keywords
- groove
- silicon
- film solar
- metal electrode
- solar cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 72
- 239000002184 metal Substances 0.000 title claims abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 239000010409 thin film Substances 0.000 title abstract 9
- 239000000463 material Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000001228 spectrum Methods 0.000 abstract description 10
- 238000013461 design Methods 0.000 abstract description 6
- 230000031700 light absorption Effects 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 206010003084 Areflexia Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a silicon-based thin-film solar cell with a metal groove structure on the bottom. The silicon-based thin-film solar cell with the metal groove structure on the bottom comprises a metal electrode with a periodical groove, and a silicon-based thin film, wherein the silicon-based thin film is formed on the surface of the metal electrode with the periodical groove, and the metal electrode with the periodical groove is located on the bottom of the silicon-based thin film. According to the silicon-based thin-film solar cell with the metal groove structure on the bottom, through design of the structural parameters of the metal groove, the optical length of light, with a certain wave length, of a sunlight spectrum in the silicon-based thin film can be increased, light absorption is enhanced, and thus the photoelectric conversion efficiency of the solar cell is improved. The silicon-based thin-film solar cell with the metal groove structure on the bottom has the advantages of being compact in structure and high in photoelectric conversion efficiency.
Description
Technical field
The present invention relates to solar cell application technical field, more specifically, the present invention relates to a kind of bottom and have the silicon-based film solar cells of metal groove structure.
Background technology
Along with the fast development of nanometer technology and Nano Scale Electronics Technology, surface plasma excimer (Surface Plasmon polaritons, SPPs) becomes an emerging research direction in recent years.SPPs incides metal and dielectric surface when electromagnetic wave, the surface electromagnetic wave vibration producing at interface place, and its electric field strength, in metal surface maximum, is exponential damping along with the increase of the distance perpendicular to interface.Therefore, SPPs is a kind of surface wave, and its electromagnetic field is constrained near scope metal and dielectric interface.SPPs has enhancing reflected effect, by the structural parameters of design metal sub-wavelength array, can realize to the amplification of characteristic frequency point, to other frequency band filtering.In addition, it can also break through diffraction limit, and electromagnetic wave is constrained within the scope of sub-wavelength dimensions and propagated.Metal material, sub-wavelength structure and metal surface medium all can exert an influence to SPPs, and SPPs also has the characteristic that two-dimensional space (surface) is propagated, and these are all easy to it to manipulate.At present, SPPs effect has been applied in multiple fields such as filtering, waveguide, resonant cavity, laser amplifier, sensing and imaging.
Solar cell is to utilize the photovoltaic effect of semi-conducting material to convert solar energy into the photoelectric device of direct current energy, and it is also referred to as photovoltaic cell conventionally, and solar battery cell is the basis of large area photovoltaic application facility.Estimate according to International Energy Agency, within 2012, world's photovoltaic production has exceeded 40 m. gigawatt (GW)s (GW), expect the year two thousand fifty, make the global emissions of carbon dioxide reduce every year 2.3 hundred million tons (Gt) thereby the energy output of photovoltaic cell will account for 11% of global energy output.At present, be used for generating semi-conducting material mainly contain: monocrystalline silicon, polysilicon, amorphous silicon, cadmium telluride, multi-element compounds, organic semiconductor, TiOx nano crystalline substance, sensitizing dyestuff etc.
From the operation principle of solar cell, the limit photoelectric conversion efficiency of any backing material is to have considered self intrinsic property (band gap) ideal effect afterwards, for its limit conversion efficiency of convergence, should accomplish following two aspects: be to reduce electricity loss on the one hand, select suitable backing material, adopt high-quality manufacturing technology (as low defect, low photo-generated carrier compound) and meticulous device structure design (be conducive to photo-generated carrier generation, separate and collect); Be the energy fully absorbing in solar spectrum on the other hand, make full use of the energy of each photon, require the loss of battery surface areflexia and adopt desirable sunken light technology to reach maximum light absorption.Although the absorption spectra of GaAs (GaAs) material is mated with solar spectrum (300nm～900nm) most, the limit photoelectric conversion efficiency of the single junction solar cells based on GaAs is the highest, but consider its toxicity and the complexity of process technology, generally the emphasis using the silica-base material such as monocrystalline silicon, amorphous silicon as research.
Cost, material toxicity, conversion efficiency and the application band etc. of solar cell have restricted its large-scale promotion.The silicon-based film solar cells proposing is in recent years the semi-conducting material that only has hundreds of nano thickness, and it can reduce costs, reduce consumption of raw materials, is convenient to large-scale promotion.But from the Intrinsic Gettering characteristic of silicon materials, monocrystalline silicon is at the lower (document 1 of the absorptivity of 600nm～1100nm wave band, Harry A.Atwater and Albert Polman, surface plasma excimer strengthens photovoltaic cell, nature material, 9(205), 2010), its photoelectric conversion efficiency only has an appointment 10%.In recent years, the scientist in New Zealand and Australia proposed effectively to strengthen at battery surface placement metal nanoparticle array the absorption of light.Effectively increase the projectile energy of sunlight, make light at inside battery by multiple reflections, energy fully absorbs, thereby improves the conversion efficiency of solar cell.
Present inventor relies on the industry experience for many years of being engaged in, and metal groove structure is introduced in active research improvement in solar cell.The surface plasma excimer effect of metal and dielectric interface place excitation is combined with the photoelectric effect of solar cell, design a kind of bottom and have the silicon-based film solar cells of metal groove structure.Arrive solar battery structure bottom when sunlight is incident to this structure and penetrates silica-base film, the interface place of the periodicity groove on silica-base film and metal electrode inspires metal surface plasma body excimer (SPPs).SPPs has the characteristic that two-dimensional space (surface) is propagated, and the light that wavelength meets SPPs vector matching condition can form waveguide mode, along silica-base film and metal groove interface direction propagation.By the structural parameters of design metal groove, the light path of the light that can increase specific wavelength in sunlight spectrum in silica-base film, increases light absorption, thereby improves the photoelectric conversion efficiency of solar cell.The designed solar battery structure of the present invention has compact conformation, feature that photoelectric conversion efficiency is high.
Summary of the invention
The present invention be directed in prior art, the lower deficiency of described conventional solar cell photoelectric conversion efficiency, provides a kind of compact conformation, silicon-based film solar cells that photoelectric conversion efficiency is high.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of bottom to there is the silicon-based film solar cells of metal groove structure, it comprises: have periodically metal electrode and the silica-base film of groove, wherein said silica-base film is formed on has the periodically surface of metal electrode of groove, and described in there is the periodically metal electrode of groove and be positioned at silica-base film bottom.
Preferably, the material of described silica-base film is single crystalline Si.
Preferably, described silica-base film thickness is at Nano grade.
Preferably, described silica-base film thickness is 100nm～500nm.
Preferably, described in, having the periodically metal electrode material of groove is Cu, Ag or Au.
The groove cycle preferably, with the metal electrode of periodicity groove is shaped as square lattice.
Preferably, described in, having the periodically groove Cycle Length of the metal electrode of groove is 200nm～400nm.
Preferably, described in, having the periodically groove shapes of the metal electrode of groove is square.
Preferably, described in, having the periodically groove length of side of the metal electrode of groove is 160nm～240nm.
Preferably, described in, having the periodically depth of groove of the metal electrode of groove is 20nm～100nm.
Preferably, described in there is the periodically metal electrode of groove and prepare by Three-dimensional micro-fabrication by femtosecond, the deposition process of described silica-base film is magnetron sputtering deposition mode.
Beneficial effect of the present invention: when sunlight is incident to the designed bottom of the present invention and has the silicon-based film solar cells of metal groove structure, and penetrating silica-base film arrival solar battery structure bottom, the interface place of the periodicity groove on silica-base film and metal electrode inspires metal surface plasma body (SPPs).SPPs has the characteristic that two-dimensional space (surface) is propagated, and the light that wavelength meets SPPs vector matching condition can form waveguide mode, along silica-base film and metal groove interface direction propagation.By the structural parameters of design metal groove, the light path of the light that can increase specific wavelength in sunlight spectrum in silica-base film, increases light absorption, thereby improves the photoelectric conversion efficiency of solar cell.The designed solar battery structure of the present invention has compact conformation, feature that photoelectric conversion efficiency is high.
Brief description of the drawings
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows according to the preferred embodiment of the invention silicon-based film solar cells that bottom has the metal groove structure stereogram within a square cycle.
Fig. 2 schematically shows according to the preferred embodiment of the invention silicon-based film solar cells that bottom has the metal groove structure cutaway view within a square cycle.
Fig. 3 schematically shows according to the preferred embodiment of the invention bottom and has the equivalent spectrum power diagram of silicon-based film solar cells of metal groove structure and the bottom equivalent spectrum power diagram without the silicon-based film solar cells of metal groove structure.
In figure: 10, groove periodically, 11, silica-base film, 12, there is the periodically metal electrode of groove 10
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Refer to Fig. 1～2, Figure 1 shows that silicon-based film solar cells that a kind of bottom of the present invention has the metal groove structure stereogram within a square cycle.Described a kind of bottom has the silicon-based film solar cells 1 of metal groove structure, comprising: have periodically metal electrode 12 and the silica-base film 11 of groove 10, wherein said silica-base film 11 is formed on has periodically metal electrode 12 surfaces of groove 10.
Fig. 2 is the cutaway view of silicon-based film solar cells within a square cycle that a kind of bottom of the present invention has a metal groove structure.More specifically, in the present invention, there is the periodically metal electrode 12 of groove 10 described in definition and be positioned at silica-base film bottom 11.
Preferably, the material of described silica-base film 11 is single crystalline Si.
Preferably, described silica-base film 11 thickness, at Nano grade, are generally 100nm～500nm, and described metal electrode 12 materials with periodicity groove 10 are Cu, Ag or Au.Preferably, the described periodically groove cycle of the metal electrode 12 of groove 10 that has is shaped as square lattice, and the groove Cycle Length of the described metal electrode 12 with periodicity groove 10 is 200nm～400nm.
Preferably, the groove shapes of the described metal electrode 12 with periodicity groove 10 is square, the groove length of side of the described metal electrode 12 with periodicity groove 10 is 160nm～240nm, and the depth of groove of the described metal electrode 12 with periodicity groove 10 is 20nm～100nm.
Concrete example of the present invention will be described below:
Selecting thickness is that the argent (Ag) of 220nm is as metal electrode material, adopt Three-dimensional micro-fabrication by femtosecond to prepare to there is the square cycle square indentations (the groove length of side is 260nm, and depth of groove is 20nm) of (Cycle Length is 300nm) on metal electrode.Then in this structure, adopt magnetron sputtering deposition mode to deposit the monocrystalline silicon that a layer thickness is 100nm (Si) silica-base film, thereby bottom forming, there is the silicon-based film solar cells of metal groove structure.The equivalent spectrum power that a kind of bottom based on above-mentioned material and structural parameters has the silicon-based film solar cells of metal groove structure is provided by Fig. 3.In Fig. 3, provided bottom without metal groove structure, the equivalent spectrum power of the silicon-based film solar cells of the monocrystalline silicon (Si) that thickness is 100nm simultaneously.Article two, equivalent spectrum power curve has been made normalized with the solar irradiance of AM1.5.Calculate light convergence factor 1.125, absorptivity has improved 12.5%.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as term " first " in specification, " second ", " the 3rd " are only for distinguishing each assembly, element, step of specification etc., instead of for representing logical relation or the ordinal relation etc. between each assembly, element, step.
Be understandable that, although the present invention discloses as above with preferred embodiment, but above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (11)
1. a bottom has the silicon-based film solar cells of metal groove structure, it is characterized in that comprising: there is periodically metal electrode and the silica-base film of groove, wherein said silica-base film is formed on has the periodically surface of metal electrode of groove, and described in there is the periodically metal electrode of groove and be positioned at silica-base film bottom.
2. silicon-based film solar cells according to claim 1, is characterized in that, the material of described silica-base film is single crystalline Si.
3. silicon-based film solar cells according to claim 1 and 2, is characterized in that, described silica-base film thickness is at Nano grade.
4. silicon-based film solar cells according to claim 3, is characterized in that, described silica-base film thickness is 100nm～500nm.
5. silicon-based film solar cells according to claim 1, is characterized in that, described in to have the periodically metal electrode material of groove be Cu, Ag or Au.
6. silicon-based film solar cells according to claim 1 or 5, is characterized in that, described in there is the periodically groove cycle of the metal electrode of groove and be shaped as square lattice.
7. silicon-based film solar cells according to claim 6, is characterized in that, described in to have the periodically groove Cycle Length of the metal electrode of groove be 200nm～400nm.
8. silicon-based film solar cells according to claim 1 or 5, is characterized in that: described in to have the periodically groove shapes of the metal electrode of groove be square.
9. silicon-based film solar cells according to claim 8, is characterized in that, described in to have the periodically groove length of side of the metal electrode of groove be 160nm～240nm.
10. silicon-based film solar cells according to claim 8, is characterized in that, described in to have the periodically depth of groove of the metal electrode of groove be 20nm～100nm.
11. according to the silicon-based film solar cells described in claim 1～10, it is characterized in that, the described metal electrode with periodicity groove is prepared by Three-dimensional micro-fabrication by femtosecond, and the deposition process of described silica-base film is magnetron sputtering deposition mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148419.1A CN103904146A (en) | 2014-04-14 | 2014-04-14 | Silicon-based thin-film solar cell with metal groove structure on bottom |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410148419.1A CN103904146A (en) | 2014-04-14 | 2014-04-14 | Silicon-based thin-film solar cell with metal groove structure on bottom |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103904146A true CN103904146A (en) | 2014-07-02 |
Family
ID=50995385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410148419.1A Pending CN103904146A (en) | 2014-04-14 | 2014-04-14 | Silicon-based thin-film solar cell with metal groove structure on bottom |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103904146A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280734A (en) * | 2015-11-11 | 2016-01-27 | 厦门乾照光电股份有限公司 | Inverted-structure-based solar cell |
| CN105921887A (en) * | 2016-05-25 | 2016-09-07 | 武汉虹拓新技术有限责任公司 | Device and method for manufacturing three-dimensional structure battery based on ultrafast laser |
| CN106098817A (en) * | 2016-06-24 | 2016-11-09 | 中国科学院长春光学精密机械与物理研究所 | Opto-electronic device, semiconductor substrate and preparation method thereof |
| CN108198894A (en) * | 2018-01-05 | 2018-06-22 | 京东方科技集团股份有限公司 | A kind of photodiode and preparation method thereof, X-ray detection substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100259826A1 (en) * | 2009-04-10 | 2010-10-14 | Lightwave Power, Inc. | Planar plasmonic device for light reflection, diffusion and guiding |
| CN102184975A (en) * | 2011-04-11 | 2011-09-14 | 复旦大学 | Thin film solar cell with improved photoelectric conversion efficiency and manufacturing method thereof |
| JP4832727B2 (en) * | 2004-05-31 | 2011-12-07 | 信越半導体株式会社 | Solar cell manufacturing method and solar cell |
| CN102315290A (en) * | 2011-09-23 | 2012-01-11 | 中国科学院光电技术研究所 | Full-spectrum absorption enhanced hydrogenated amorphous silicon hydride thin film solar cell |
| CN103668130A (en) * | 2012-09-25 | 2014-03-26 | 海洋王照明科技股份有限公司 | Preparation method of metal nanostructure |
-
2014
- 2014-04-14 CN CN201410148419.1A patent/CN103904146A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4832727B2 (en) * | 2004-05-31 | 2011-12-07 | 信越半導体株式会社 | Solar cell manufacturing method and solar cell |
| US20100259826A1 (en) * | 2009-04-10 | 2010-10-14 | Lightwave Power, Inc. | Planar plasmonic device for light reflection, diffusion and guiding |
| CN102184975A (en) * | 2011-04-11 | 2011-09-14 | 复旦大学 | Thin film solar cell with improved photoelectric conversion efficiency and manufacturing method thereof |
| CN102315290A (en) * | 2011-09-23 | 2012-01-11 | 中国科学院光电技术研究所 | Full-spectrum absorption enhanced hydrogenated amorphous silicon hydride thin film solar cell |
| CN103668130A (en) * | 2012-09-25 | 2014-03-26 | 海洋王照明科技股份有限公司 | Preparation method of metal nanostructure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280734A (en) * | 2015-11-11 | 2016-01-27 | 厦门乾照光电股份有限公司 | Inverted-structure-based solar cell |
| CN105921887A (en) * | 2016-05-25 | 2016-09-07 | 武汉虹拓新技术有限责任公司 | Device and method for manufacturing three-dimensional structure battery based on ultrafast laser |
| CN106098817A (en) * | 2016-06-24 | 2016-11-09 | 中国科学院长春光学精密机械与物理研究所 | Opto-electronic device, semiconductor substrate and preparation method thereof |
| CN108198894A (en) * | 2018-01-05 | 2018-06-22 | 京东方科技集团股份有限公司 | A kind of photodiode and preparation method thereof, X-ray detection substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Enrichi et al. | Plasmonic enhanced solar cells: Summary of possible strategies and recent results | |
| Hua et al. | Efficient photon management with nanostructures for photovoltaics | |
| Catchpole et al. | Plasmonics and nanophotonics for photovoltaics | |
| Mandal et al. | Progress in plasmonic solar cell efficiency improvement: A status review | |
| Narasimhan et al. | Nanostructures for photon management in solar cells | |
| Yu et al. | Photon management for photovoltaics | |
| Cao et al. | Light propagation in flexible thin-film amorphous silicon solar cells with nanotextured metal back reflectors | |
| Fahim et al. | Enhanced photocurrent in crystalline silicon solar cells by hybrid plasmonic antireflection coatings | |
| CN104733554A (en) | Silicon based thin film solar cell with bottom provided with metal nanoparticle structure | |
| Le et al. | Synergistic plasmonic and photonic crystal light-trapping: Architectures for optical up-conversion in thin-film solar cells | |
| CN103904146A (en) | Silicon-based thin-film solar cell with metal groove structure on bottom | |
| CN102184995B (en) | Long-range plasmon waveguide array synergy unit for solar cell | |
| Eyderman et al. | Light-trapping optimization in wet-etched silicon photonic crystal solar cells | |
| CN102903790A (en) | Multilayer metal nanometer particle structure of semiconductor solar battery surface and preparation method | |
| Yang et al. | Optimal design of ultra‐broadband, omnidirectional, and polarization‐insensitive amorphous silicon solar cells with a core‐shell nanograting structure | |
| Muhammad et al. | Broadband absorption enhancement in modified grating thin-film solar cell | |
| Hussein et al. | Hybrid core semiconductor nanowires for solar cell applications | |
| CN102569444B (en) | Solar cell structure with wide spectrum high absorption and manufacturing method thereof | |
| CN104124286B (en) | A kind of utilization growth noble metals certainly etc. are from primitive nanostructured | |
| CN103915520A (en) | Silicon-based thin film solar cell with surface provided with metal grid structure | |
| El-Bashar et al. | Analysis of highly efficient quad-crescent-shaped Si nanowires solar cell | |
| CN102881728B (en) | Metamaterial structure based thin-film solar cell and preparation method thereof | |
| CN102368506A (en) | n-zinc oxide/p-silica nanowire three-dimensional heterojunction solar energy conversion equipment | |
| CN104064619B (en) | A kind of microcrystal silicon non-crystalline silicon radially binode nanowire solar cells | |
| CN104157714A (en) | Amorphous / microcrystalline silicon laminating solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140702 |