CN103903865A - Dye-sensitized solar cell - Google Patents

Dye-sensitized solar cell Download PDF

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Publication number
CN103903865A
CN103903865A CN201210581749.0A CN201210581749A CN103903865A CN 103903865 A CN103903865 A CN 103903865A CN 201210581749 A CN201210581749 A CN 201210581749A CN 103903865 A CN103903865 A CN 103903865A
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China
Prior art keywords
dssc
optoelectronic pole
electrode
dssc according
solar cell
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Pending
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CN201210581749.0A
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Chinese (zh)
Inventor
李勇明
杨松旺
陈宗琦
沈沪江
刘岩
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Shanghai Institute of Ceramics of CAS
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Shanghai Institute of Ceramics of CAS
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Priority to CN201210581749.0A priority Critical patent/CN103903865A/en
Publication of CN103903865A publication Critical patent/CN103903865A/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Abstract

The invention provides a dye-sensitized solar cell comprising a photoelectrode, a counter electrode which is opposite to the photoelectrode, and an electrolyte layer which is kept between the photoelectrode and the counter electrode. One side, away from the electrolyte layer, of the photoelectrode is provided with an ultraviolet-proof layer. According to the dye-sensitized solar cell provided in the invention, the ultraviolet-proof layer can effectively reduce degradation of the dye-sensitized solar cell due to ultraviolet light in the sunlight, thereby improving the durability of the dye-sensitized solar cell, prolonging the service life of the dye-sensitized solar cell, and helping the industrialization development of the dye-sensitized solar cell.

Description

A kind of DSSC
Technical field
The present invention relates to a kind of solar cell, relate in particular to a kind of DSSC.
Background technology
The instead energy of fossil fuel, has utilized the solar cell of sunlight to receive publicity, and people have carried out various research to it.Solar cell is a kind of photoelectric conversion device that is electric energy by transform light energy, due to using sunlight as the energy, thus minimum on the impact of earth environment, can be popularized widely.
The research and development that converts solar energy in recent years luminous energy is very fast.Apply dye-sensitized solar cell (the Dye-Sensitized Solar Cell being moved by the photoinduction electronics of dye sensitization, DSSC), instead the solar cell of future generation of silicon (Si) class solar cell etc. receives publicity in recent years, and is extensively studied.The advantage of DSSC (DSSC) is very outstanding: 1, make simply, cost is low; 2, the dye sensitizing agent using can be issued in very low light energy saturated, therefore can under various illumination conditions, use; 3, can in very wide temperature range, normally work; 4, transparent product be can make, door and window, roof and vehicle top are applied to.Therefore it becomes rapidly research emphasis and the focus of countries in the world, has obtained abundant achievement, has started the upsurge of various countries' research DSSC solar cell.
DSSC is as third generation solar cell, it is current most potential silicon solar cell cheap alternative, it be prepared into cheap broad-band gap oxide semiconductor there is loose structure, the nano-crystal film of high-specific surface area, on film, adsorb light-sensitive coloring agent, and select suitable redox electrolytes matter, utilize dyestuff to capture sunlight.Its operation principle is: dye molecule transits to excitation state having absorbed after photon, dye molecule in excitation state by electronic injection in semi-conductive conduction band, electrons spread is to conductive substrates, in rear inflow external circuit, dyestuff in oxidation state is by electrolyte reducing/regenerating, the electrolyte of oxidation state is reduced after electrode is accepted to electronics, thereby completes a circulation.
But under long-term illumination, because the ultraviolet in sunlight can cause DSSC deteriorated, thereby electricity conversion is reduced, DSSC durability reduces, the industrialized development of restriction DSSC.
Summary of the invention
Main purpose of the present invention is to overcome above-mentioned deficiency, and a kind of DSSC is provided, and can improve the durability of DSSC.
The invention provides a kind of DSSC, comprise optoelectronic pole, and optoelectronic pole opposed to electrode with remain on optoelectronic pole and to the dielectric substrate between electrode, described optoelectronic pole is provided with ultraviolet resistant layer away from a side of dielectric substrate.
Preferably, described ultraviolet resistant layer is selected from least one in glass, thin polymer film, coating and the surface coating with ultraviolet resistance.
Preferably, the visible light transmissivity of described ultraviolet resistant layer is 80%-100%, and wavelength is that the transmitance of the light below 350nm is 0%.
Preferably, by apart from order from far near of described dielectric substrate, described optoelectronic pole comprises optoelectronic pole transparency carrier and optoelectronic pole film, described electrode is comprised to electrode base board with to electrode film.
Wherein, described ultraviolet resistant layer covers in the side of described optoelectronic pole transparency carrier away from dielectric substrate.
Wherein, described optoelectronic pole side transparency carrier can be transparent inorganic substrate or transparent plastic substrate.
Preferably, described transparent inorganic substrate is quartz, sapphire or glass etc.
Preferably, the composition material of described transparent plastic substrate is selected from least one in polyethylene terephthalate, Polyethylene Naphthalate, Merlon, polypropylene, polyphenylene sulfide, Kynoar, polyimides, polysulfones and polyolefin etc.
Wherein, described optoelectronic pole film is the multichip semiconductor pore membrane that carries sensitizing dyestuff.
Preferably, described in, carrying semi-conducting material in the multichip semiconductor pore membrane of sensitizing dyestuff can be TiO 2, MgO, ZnO, SnO 2, WO 3, Fe 2o 3, In 2o 3, Bi 2o 3, Nb 2o 5, SrTiO 3, BaTiO 3, ZnS, CdS, CdSe, CdTe, PbS, CuInS or InP etc.
Preferably, the sensitizing dyestuff carrying described in being carried on the multichip semiconductor pore membrane of sensitizing dyestuff is ruthenium bipyridyl complexes.
Preferably, the described composition material to electrode film is selected from platinum, gold, carbon or electric conductive polymer.
Preferably, the electrolyte solution in described dielectric substrate is oxidation-reduction pair system, and wherein, oxidation-reduction pair can be I -/ I 3 -, Br -/ Br 2, quinone/quinhydrones, SCN -/ (SCN) 2, Fe 2+/ Fe 3+or Cu +/ Cu 2+deng.
Wherein, to being provided with electrolyte solution hand-hole on electrode side transparency carrier, after electrolyte solution being injected between two electrodes, described electrolyte solution hand-hole is sealed.
DSSC provided by the invention, can effectively reduce deteriorated to DSSC the ultraviolet ray in sunlight by ultraviolet resistant layer, improve DSSC durability, in the useful life that extends DSSC, be beneficial to DSSC industrialized development.
Brief description of the drawings
Fig. 1 is the structural representation of DSSC of the present invention;
Fig. 2 is the chemical structural formula of commercially available standard Z907 dyestuff;
Fig. 3 is the light transmission rate curve of commercially available ultraviolet ray intercepting glass used in embodiment 1;
Fig. 4 is the current density voltage curve figure of embodiment 1 and reference examples;
Fig. 5 is that experimental result is accelerated in the light aging of embodiment 1;
Fig. 6 is the light transmission rate curve of commercially available antiultraviolet thin polymer film used in embodiment 2;
Fig. 7 is the current density voltage curve figure of embodiment 2 and reference examples;
Fig. 8 is that experimental result is accelerated in the light aging of embodiment 2;
Fig. 9 is the light transmission rate curve of commercially available antiultraviolet coating used in embodiment 3;
Figure 10 is the current density voltage curve figure of embodiment 3 and reference examples;
Figure 11 is that experimental result is accelerated in the light aging of embodiment 3;
Figure 12 is the light transmission rate curve of antiultraviolet surface coating used in embodiment 4;
Figure 13 is the current density voltage curve figure of embodiment 4 and reference examples;
Figure 14 is that experimental result is accelerated in the light aging of embodiment 4;
Figure 15 is that experimental result is accelerated in the light aging of reference examples;
Embodiment
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments, to understand better the present invention.
DSSC of the present invention comprise optoelectronic pole, and optoelectronic pole opposed to electrode with remain on optoelectronic pole and to the dielectric substrate 5 between electrode, wherein, described optoelectronic pole is provided with ultraviolet resistant layer 6 away from a side of dielectric substrate.
Press apart from dielectric substrate 5 order from far near, optoelectronic pole comprises optoelectronic pole transparency carrier 1 and optoelectronic pole film 2, and electrode is comprised to electrode base board 3 with to electrode film 4.
reference examples
1. the making of dye solution
After commercially available standard Z907 dyestuff (chemical structural formula as shown in Figure 2) is purified, be dissolved in acetonitrile: in the solvent of the tert-butyl alcohol=1:1, be made into the dye solution of 0.4mmol/L.
2. optoelectronic pole is made
The commercially available TiO that is 20nm particle diameter 2slurry is coated on FTO conductive glass surface with method for printing screen, is placed in Muffle furnace at 500 DEG C sintering 2 hours, obtains the TiO of 20 μ m 2film.TiO 2electrode soaks 2 days in dye solution.
3. pair electrode fabrication
Commercially available conducting polymer is coated on titanium on electrode base board with method for printing screen, is placed in Muffle furnace at 300 DEG C sintering 0.5 hour, is cooled to room temperature.
4. battery is made
Engage with PUR optoelectronic pole with to electrode, inject electrolyte, make DSSC.
embodiment 1
1. the making of dye solution
After commercially available standard Z907 dyestuff (chemical structural formula as shown in Figure 2) is purified, be dissolved in acetonitrile: in the solvent of the tert-butyl alcohol=1:1, be made into the dye solution of 0.4mmol/L.
2. optoelectronic pole is made
The commercially available TiO that is 20nm particle diameter 2slurry is coated on FTO conductive glass surface with method for printing screen, is placed in Muffle furnace at 500 DEG C sintering 2 hours, obtains the TiO of 20 μ m 2film.TiO 2electrode soaks 2 days in dye solution.
3. pair electrode fabrication
Commercially available conducting polymer is coated on titanium on electrode base board with method for printing screen, is placed in Muffle furnace at 300 DEG C sintering 0.5 hour, is cooled to room temperature.
4. battery is made
Engage with PUR optoelectronic pole with to electrode, inject electrolyte, in a side at optoelectronic pole away from dielectric substrate, cover the commercially available ultraviolet ray intercepting glass of one deck and make DSSC, wherein, after testing, the visible light transmissivity of this commercially available ultraviolet ray intercepting glass is 90%, and wavelength is that the light penetration of 366 nanometers is 0%, wavelength is that the light penetration of 389 nanometers is 50%, as shown in Figure 3.
Gained DSSC performance is tested, and as shown in Figure 4, there is not significant change in voltage and current to result, illustrates that the initial performance of embodiment 1 gained DSSC is identical with reference examples.
Gained DSSC performance is carried out to light aging and accelerate experiment, the battery efficiency of reference examples has dropped to 0 after 100h, as shown in figure 15, and the starting efficiency of the battery efficiency of the present embodiment is 6.74%, after 100h, be to be 4.29% after 6.19%, 500h, as shown in Figure 5, the durability that the present embodiment gained DSSC is described is higher, longer service life.
embodiment 2
Preparation technology is with embodiment 1, its difference is to cover in the side away from dielectric substrate at optoelectronic pole the commercially available antiultraviolet thin polymer film of one deck, after testing, the visible light transmissivity of this commercially available antiultraviolet thin polymer film is 91%, wavelength is that the light penetration of 372 nanometers is 0%, wavelength is that the light penetration of 391 nanometers is 50%, as shown in Figure 6.
Gained DSSC performance is tested, and as shown in Figure 7, there is not significant change in voltage and current to result, illustrates that the initial performance of embodiment 1 gained DSSC is identical with reference examples.
Gained DSSC performance is carried out to light aging and accelerate experiment, the battery efficiency of reference examples has dropped to 0 after 100h, and the starting efficiency of the battery efficiency of the present embodiment is 6.80%, after 100h, be 6.24%, after 500h, be 4.30%, as shown in Figure 8, illustrate that the durability of the present embodiment gained DSSC is higher, longer service life.
embodiment 3
Preparation technology is with embodiment 1, its difference is to apply in the side away from dielectric substrate at optoelectronic pole the commercially available antiultraviolet coating of one deck, after testing, the visible light transmissivity of this commercially available antiultraviolet coating is 90%, wavelength is that the light penetration of 372 nanometers is 0%, wavelength is that the light penetration of 399 nanometers is 50%, as shown in Figure 9.
Gained DSSC performance is tested, and as shown in figure 10, there is not significant change in voltage and current to result, illustrates that the initial performance of embodiment 1 gained DSSC is identical with reference examples.
Gained DSSC performance is carried out to light aging and accelerate experiment, the battery efficiency of reference examples has dropped to 0 after 100h, and the starting efficiency of the battery efficiency of the present embodiment is 6.72%, after 100h, be 6.20%, after 500h, be 4.31%, as shown in figure 11, illustrate that the durability of the present embodiment gained DSSC is higher, longer service life.
embodiment 4
Preparation technology is with embodiment 1, its difference is to cover in the side away from dielectric substrate at optoelectronic pole one deck antiultraviolet surface coating, after testing, the visible light transmissivity of this surface coating is 90%, wavelength is that the light penetration of 376 nanometers is 0%, wavelength is that the light penetration of 396 nanometers is 50%, as shown in figure 12.
Gained DSSC performance is tested, and as shown in figure 13, there is not significant change in voltage and current to result, illustrates that the initial performance of embodiment 1 gained DSSC is identical with reference examples.
Gained DSSC performance is carried out to light aging and accelerate experiment, the battery efficiency of reference examples has dropped to 0 after 100h, and the starting efficiency of the battery efficiency of the present embodiment is 6.80%, after 100h, be 6.23%, after 500h, be 4.32%, as shown in figure 14, illustrate that the durability of the present embodiment gained DSSC is higher, longer service life.
The initial performance characterization result of the DSSC of table 1 embodiment 1-4 and reference examples
? Short-circuit current density (mA/cm 2) Open circuit voltage (V) Fill factor, curve factor (%) Series resistance (Ω) Conversion efficiency (%)
Embodiment 1 15.36 0.712 61.60 0.11 6.74
Embodiment 2 14. 83 0.710 64.53 0.10 6.80
Embodiment 3 14.66 0.707 64.80 0.10 6.72
Embodiment 4 14.80 0.714 64.32 0.10 6.80
Reference examples 15.36 0.712 60.90 0.11 6.97
Table 1 illustrates that the initial performance of embodiment 1-4 gained DSSC is identical with reference examples.
Above specific embodiments of the invention be have been described in detail, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and alternative also all among category of the present invention.Therefore, equalization conversion and the amendment done without departing from the spirit and scope of the invention, all should contain within the scope of the invention.

Claims (12)

1. a DSSC, is characterized in that, comprise optoelectronic pole, and optoelectronic pole opposed to electrode with remain on optoelectronic pole and to the dielectric substrate between electrode, wherein, described optoelectronic pole is provided with ultraviolet resistant layer away from a side of dielectric substrate.
2. DSSC according to claim 1, is characterized in that, described ultraviolet resistant layer is selected from least one in glass, thin polymer film, coating and the surface coating with ultraviolet resistance.
3. according to DSSC described in claim 1 or 2, it is characterized in that, the visible light transmissivity of described ultraviolet resistant layer is 80%-100%, and wavelength is that the transmitance of the light below 350nm is 0%.
4. DSSC according to claim 1, is characterized in that, by apart from described dielectric substrate order from far near, described optoelectronic pole comprises optoelectronic pole transparency carrier and optoelectronic pole film, described electrode is comprised to electrode base board with to electrode film.
5. DSSC according to claim 4, is characterized in that, described ultraviolet resistant layer covers in the side of described optoelectronic pole transparency carrier away from dielectric substrate.
6. DSSC according to claim 4, is characterized in that, described optoelectronic pole transparency carrier is transparent inorganic substrate or transparent plastic substrate.
7. DSSC according to claim 6, is characterized in that, described transparent inorganic substrate is quartz, sapphire or glass.
8. DSSC according to claim 6, it is characterized in that, the composition material of described transparent plastic substrate is selected from least one in polyethylene terephthalate, Polyethylene Naphthalate, Merlon, polypropylene, polyphenylene sulfide, Kynoar, polyimides, polysulfones and polyolefin.
9. DSSC according to claim 4, is characterized in that, described optoelectronic pole film is the multichip semiconductor pore membrane that carries sensitizing dyestuff.
10. DSSC according to claim 9, is characterized in that, described in to be loaded with semi-conducting material in the multichip semiconductor pore membrane of sensitizing dyestuff be TiO 2, MgO, ZnO, SnO 2, WO 3, Fe 2o 3, In 2o 3, Bi 2o 3, Nb 2o 5, SrTiO 3, BaTiO 3, ZnS, CdS, CdSe, CdTe, PbS, CuInS or InP.
11. DSSC according to claim 9, is characterized in that, described in the dyestuff that is loaded with in the multichip semiconductor pore membrane of sensitizing dyestuff be ruthenium bipyridyl complexes.
12. DSSC according to claim 4, is characterized in that, the described composition material to electrode film is selected from platinum, gold, carbon or electric conductive polymer.
CN201210581749.0A 2012-12-27 2012-12-27 Dye-sensitized solar cell Pending CN103903865A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106892061A (en) * 2017-02-17 2017-06-27 上海源紊新能源科技有限公司 A kind of buoy that can utilize wind energy and solar energy
CN108231246A (en) * 2018-03-01 2018-06-29 合肥微晶材料科技有限公司 A kind of anti-ultraviolet nano silver wire conductive film and its manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11345991A (en) * 1998-06-02 1999-12-14 Ricoh Co Ltd Solar battery
CN1914762A (en) * 2004-01-30 2007-02-14 帝人杜邦薄膜日本有限公司 Laminated film for dye-sensitized solar cell, electrode for dye-sensitized solar cell and process for producing the same
JP2008112704A (en) * 2006-10-31 2008-05-15 Kubota Matsushitadenko Exterior Works Ltd Dye-sensitization solar cell and construction board provided with solar cell
CN101694817A (en) * 2009-09-30 2010-04-14 中国科学院等离子体物理研究所 Method for improving stability of dye-sensitized solar battery
JP2012221778A (en) * 2011-04-11 2012-11-12 Konica Minolta Business Technologies Inc Photoelectric conversion element, method for manufacturing photoelectric conversion element, and solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11345991A (en) * 1998-06-02 1999-12-14 Ricoh Co Ltd Solar battery
CN1914762A (en) * 2004-01-30 2007-02-14 帝人杜邦薄膜日本有限公司 Laminated film for dye-sensitized solar cell, electrode for dye-sensitized solar cell and process for producing the same
JP2008112704A (en) * 2006-10-31 2008-05-15 Kubota Matsushitadenko Exterior Works Ltd Dye-sensitization solar cell and construction board provided with solar cell
CN101694817A (en) * 2009-09-30 2010-04-14 中国科学院等离子体物理研究所 Method for improving stability of dye-sensitized solar battery
JP2012221778A (en) * 2011-04-11 2012-11-12 Konica Minolta Business Technologies Inc Photoelectric conversion element, method for manufacturing photoelectric conversion element, and solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106892061A (en) * 2017-02-17 2017-06-27 上海源紊新能源科技有限公司 A kind of buoy that can utilize wind energy and solar energy
CN108231246A (en) * 2018-03-01 2018-06-29 合肥微晶材料科技有限公司 A kind of anti-ultraviolet nano silver wire conductive film and its manufacturing method

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Application publication date: 20140702