CN103887444A - OLED blue-light device capable of enhancing the service life - Google Patents

OLED blue-light device capable of enhancing the service life Download PDF

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CN103887444A
CN103887444A CN201310748007.7A CN201310748007A CN103887444A CN 103887444 A CN103887444 A CN 103887444A CN 201310748007 A CN201310748007 A CN 201310748007A CN 103887444 A CN103887444 A CN 103887444A
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layer
intermediate layer
light device
life
span
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CN103887444B (en
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何麟
邱勇
罗志忠
黄秀颀
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

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Abstract

The invention discloses an OLED blue-light device capable of enhancing the service life. The OLED blue-light device comprises a substrate, a first electrode, a hole injection layer, a hole transmission layer, a light-emitting layer, an electron transmission layer, an electron injection layer and a second electrode. One intermediate layer is also included between the hole injection layer and the hole transmission layer. The material of the intermediate layer and hole mobility of the material of the hole transmission layer are at the same magnitude. Compared with blue-light devices with no arrangement of the intermediate layer, the service life of the device is enhanced for nearly 10 times after the intermediate layer is additionally arranged in the blue-light device, and other performance of the device is not influenced simultaneously.

Description

A kind of OLED blue-light device that improves the life-span
Technical field
The present invention, about a kind of OLED device, refers to a kind of OLED blue-light device that improves the life-span especially.
Background technology
Along with the raising of OLED material synthesis technology, the electron mobility of electronic material has had larger lifting with respect to materials such as nascent Alq, and even the electron mobility of some material has reached the same order of magnitude with the hole mobility of general hole mobile material.But due at present aspect the injection of charge carrier, can think that electronics is from negative electrode to electron transfer layer (ETL, Electron Transport Layer) injection be almost there is no obstacle, and due to ITO(Indium Tin Oxides, tin indium oxide) and hole injection layer (HIL, Hole Injection Layer) energy level differ greatly, there is very large obstacle in the injection in hole, and material of main part used is nearly all inclined to one side electron type at present, therefore charge carrier is nearly all at hole transmission layer (HTL, Hole Transport Layer)/luminescent layer (EML, Emitting Layer) interface gathering, cause complex centre from HTL very close to, and because the excitation state of HTL material is stable not, cause shorten device lifetime.
Meanwhile, due to the raising of electron mobility, OLED device is transformed into the device of inclined to one side electron type, and unnecessary electrons flows to htl layer and arrives anode, forms leakage current.Produce free radical because unnecessary electrons causes HTL, make HTL material breakdown, cause variation device lifetime.
For red-green glow material, can adopt the form of two main bodys, add a kind of main body that passes hole, recombination region is transferred in the middle of EML or the interface of EML/ETL, thus the life-span of improving device.But for blue light material, there is no at present suitable, the stable cavity type blue light main body of energy level, therefore, for blue light, can only be by changing ETL structure, as adopt the ETL material of low mobility, can improve well the life-span of device, but the defect of bringing is the driving voltage that has improved device.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of OLED blue-light device that improves the life-span and reduce device driving voltage.
For achieving the above object, the invention provides a kind of OLED blue-light device that improves the life-span, it includes substrate, the first electrode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the second electrode, between hole injection layer and hole transmission layer, also comprise one deck intermediate layer, the hole mobility of the material in described intermediate layer and the material of hole transmission layer is in same magnitude.
The material in described intermediate layer is homogenous material.
The material doped material that has described hole transmission layer in described intermediate layer.
Between described intermediate layer and described hole injection layer, be also provided with assist holes transport layer.
Described intermediate layer thickness is 1-500, and in described intermediate layer, the doping content of the material in intermediate layer is 1-30%, and the thickness of the described hole transmission layer contacting with described luminescent layer is 20-200.
The highest occupied molecular orbital(HOMO) energy level of the material in described intermediate layer is between 5.3-5.5eV, and lowest unoccupied molecular orbital (LUMO) energy level is between 2.6-3.3eV.
The material in described intermediate layer is green glow, gold-tinted and red emitting material, comprising there being 10-(2-[4-morpholinodithio base)-2,3,6,7-tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H, 11H-(1) chromene, rubrene, 4-(dicyano methylene)-2-uncle-butyl-6-(1,1,7,7-tetramethyl julolidine-9-thiazolinyl)-4H-pyrans, and 4-(dicyano methylene)-2-isopropyl-6-(1,1,7,7-tetramethyl julolidine-9-thiazolinyl)-4H-pyrans.
Described intermediate layer has the one in following general structure:
Figure 2013107480077100002DEST_PATH_IMAGE001
(I)
Figure 392466DEST_PATH_IMAGE002
(II)
(III)
Figure 155148DEST_PATH_IMAGE004
(IV)
Wherein R 1, R 2, R 3, R 4, R 5, R 6for H, C atomicity be 1 ~ 4 alkyl, CH 3o, halogen atom, CF 3, NO 2, CN, (CH 3) 2n, phenyl, p-methylphenyl, o-methyl-phenyl-, p-methoxyphenyl, 4-(N, N '-dimethyl) anilino-, 2-pyridine radicals, 1-naphthyl, 4-quinolyl, p-methoxyphenyl, p-isopropyl phenyl, to tert-butyl-phenyl, xenyl, to the one in Phenoxyphenyl.
Compared to the blue-light device that does not add intermediate layer, after blue-light device of the present invention has added intermediate layer, the life-span upgrading of device nearly 10 times, OLED blue-light device of the present invention is improving in the life-span, can not affect other performances of device, can not improve the driving voltage of device.
Accompanying drawing explanation
Fig. 1 is the first embodiment schematic diagram of the present invention's OLED blue-light device that can improve the life-span;
Fig. 2 is the second embodiment schematic diagram of the present invention's OLED blue-light device that can improve the life-span;
Fig. 3 is the 3rd embodiment schematic diagram of the present invention's OLED blue-light device that can improve the life-span;
Fig. 4 is the life curve figure of first embodiment of the invention;
Fig. 5 is the life curve figure of second embodiment of the invention;
Fig. 6 is the life curve figure of third embodiment of the invention.
Embodiment
For ease of structure of the present invention and the effect that reaches are had to further understanding, the existing preferred embodiment that develops simultaneously is by reference to the accompanying drawings described in detail as follows.
As shown in Figure 1, OLED blue-light device of the present invention includes substrate 100, the first electrode 111, hole injection layer 112, intermediate layer 113, hole transmission layer 114, luminescent layer 115, electron transfer layer 116, electron injecting layer (EIL, Electron Injection Layer) 117 and the second electrode 118 from the bottom to top successively.Wherein substrate 100 can be selected the substrates such as glass, plastics or stainless steel.If substrate is transparency carrier, the first electrode 111 is transparency electrode, and the second electrode 118 is reflecting electrode.If substrate is opaque substrate, the first electrode 111 is reflecting electrode, and the second electrode 118 is transparency electrode.Hole injection layer 112 is for can select N, N '-bis-(1-naphthyl)-N, N '-diphenyl-1, 1 '-biphenyl-4, 4 '-diamine (NPB), 4, 4', 4 " tris (3-methylphenylphenylamino)-triphenylamine (m-MTDATA), Poly (3, 4-ethylenedioxythiophene)/poly (styrenesulfonate) (PEDOT:PSS), the conventional HIL materials such as polyvinyl carbazole (PVK), adopt evaporation, spin coating, the technology such as inkjet printing form film on substrate 100.If HIL is small molecule material, first-selected evaporation, LITI(laser thermal transfer) etc. technique, if HIL selects macromolecular material, can select the mode of inkjet printing or spin coating.After having prepared HIL layer, can adopt evaporation, the modes such as LITI are prepared intermediate layer 113, the material in intermediate layer 113 can be chosen as (5, 6, 11, 12)-Tetraphenylnaphthacene (rubrene), 4-(Dicyanomethylene)-2-tert-butyl-6-(1, 1, 7, 7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB), 4-(dintrile methene)-2-isopropyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTi), 2, 3, 6, 7-Tetrahydro-1, 1, 7, 7,-tetramethyl-1H, 5H, 11H-10-(2-benzothiazolyl) quinolizino-[9, 9a, 1gh] dyestuff grown of some wavelength such as coumarin (C545T).The thickness in this intermediate layer 113 is 10-100, preferably 15-50.After intermediate layer 113 preparations finish, can prepare successively in order other functional layer by the technology such as evaporation or spin coating or LITI, finally complete encapsulation.
Fig. 2 is second embodiment of the present invention, and this OLED blue-light device includes substrate 200, the first electrode 211, hole injection layer 212, intermediate layer 213, hole transmission layer 214, luminescent layer 215, electron transfer layer 216, electron injecting layer 217 and the second electrode 218 from the bottom to top successively.Different from first embodiment, adopt the mode of doping together with hole transport layer material preparation as the material in intermediate layer 213, be finally hole transmission layer 214 with one deck HTL() by separated with luminescent layer 215 this intermediate layer 213.Wherein the doping content of intermediate layer material in HTL is 1-30%, preferably 5-15%.Thickness is 1-500, preferably 10-150, and the thickness of hole transmission layer 214 is 20-200, preferably 70-100.The generation type of remainder layer is similar to Example 1.
Fig. 3 is the 3rd embodiment of the present invention, and this OLED blue-light device includes substrate 200, the first electrode 311, hole injection layer 312, assist holes transmitting layer 3 14, intermediate layer 313, hole transmission layer 314 ', luminescent layer 315, electron transfer layer 316, electron injecting layer 317 and the second electrode 318 from the bottom to top successively.This embodiment is clipped in intermediate layer 313 centre of assist holes transmitting layer 3 14 and hole transmission layer 314 ', and hole transmission layer (HTL) layer is split up into two-layer.The thickness of the hole transmission layer 314 ' wherein contacting with luminescent layer 315 is 20-200, preferably 70-100.The thickness that this intermediate layer is 313 layers is 10-100, preferably 15-50.The technique of remainder layer is similar to embodiment 1.
In the present invention, in htl layer, add one deck to there is the intermediate layer that absorbs electronics and exciton, the exciton that is used for absorbing electronics unnecessary in HTL and produces in HTL, thus make HTL more stable.This intermediate layer can be independent layer of material, can be also that mode and the HTL material adulterating is fused to one deck.And for this intermediate layer material, it should have higher hole mobility, can be with the hole mobility of HTL material in same magnitude, simultaneously, its HOMO(highest occupied molecular orbital(HOMO)) energy level and HTL approach, between 5.3-5.5eV, and LUMO(lowest unoccupied molecular orbital (LUMO)) energy level is between 2.6-3.3eV, to guarantee well transporting holes and absorb electronics of this material.
Typical materials are as rubrene(rubrene), DCJTB(red dye, 4-(dicyano methylene)-2-uncle-butyl-6-(1, 1, 7, 7-tetramethyl julolidine-9-thiazolinyl)-4H-pyrans), DCJTi(ruddiness guest materials, 4-(dicyano methylene)-2-isopropyl-6-(1, 1, 7, 7-tetramethyl julolidine-9-thiazolinyl)-4H-pyrans), C545T(10-(2-[4-morpholinodithio base)-2, 3, 6, 7-tetrahydrochysene-1, 1, 7, 7-tetramethyl-1H, 5H, 11H-(1) chromene) etc. the dyestuff grown of some wavelength, Hexaazatriphenylenehexacabonitrile (HAT-CN), tetrafluorotetracyanoquinodimethane (F4-TCNQ) etc.
This intermediate layer material also comprises the material with following molecular formula general formula:
(I)
(II)
(III)
Figure 4341DEST_PATH_IMAGE004
(IV)
Wherein R1, R2, R3, R4, R5, R6 can be alkyl, the CH that H, C atomicity are 1 ~ 4 3o, halogen atom, CF 3, NO 2, CN, (CH 3) 2n, phenyl, p-methylphenyl, o-methyl-phenyl-, p-methoxyphenyl, 4-(N, N '-dimethyl) anilino-, 2-pyridine radicals, 1-naphthyl, 4-quinolyl, p-methoxyphenyl, p-isopropyl phenyl, to tert-butyl-phenyl, xenyl, to the one in Phenoxyphenyl.
Representative material is as follows:
Figure 319523DEST_PATH_IMAGE008
C1
Figure 56535DEST_PATH_IMAGE009
C2
Figure 642237DEST_PATH_IMAGE010
C3
Figure 134398DEST_PATH_IMAGE011
C4
Figure 2013107480077100002DEST_PATH_IMAGE012
C5
Figure 438340DEST_PATH_IMAGE013
C6
Figure 2013107480077100002DEST_PATH_IMAGE014
C7
Figure 277246DEST_PATH_IMAGE015
C8
Figure 2013107480077100002DEST_PATH_IMAGE016
C9
C10
Figure DEST_PATH_IMAGE018
C11
Figure 380517DEST_PATH_IMAGE019
Figure DEST_PATH_IMAGE020
C12 C13
Figure 738467DEST_PATH_IMAGE021
Figure DEST_PATH_IMAGE022
C14 C15。
As shown in Fig. 4, Fig. 5 and Fig. 6, compared to the blue-light device that does not add intermediate layer, after having added intermediate layer, the life-span upgrading of device nearly 10 times.OLED blue-light device of the present invention, in improving the life-span, can not affect other performances of device, can not improve the driving voltage of device.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.

Claims (8)

1. one kind can be improved the OLED blue-light device in life-span, it includes substrate, the first electrode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the second electrode, it is characterized in that, between hole injection layer and hole transmission layer, also comprise one deck intermediate layer, the hole mobility of the material in described intermediate layer and the material of described hole transmission layer is in same magnitude.
2. the OLED blue-light device that improves the life-span as claimed in claim 1, is characterized in that, the material in described intermediate layer is homogenous material.
3. the OLED blue-light device that improves the life-span as claimed in claim 1, is characterized in that, the material doped material that has described hole transmission layer in described intermediate layer.
4. the OLED blue-light device that improves the life-span as claimed in claim 2, is characterized in that, between described intermediate layer and described hole injection layer, is also provided with assist holes transport layer.
5. the OLED blue-light device that improves the life-span as claimed in claim 3, it is characterized in that, described intermediate layer thickness is 1-500, and in described intermediate layer, the doping content of the material in intermediate layer is 1-30%, and the thickness of the described hole transmission layer contacting with described luminescent layer is 20-200.
6. the OLED blue-light device in the improved life-span as described in claim 2,3 or 4, is characterized in that, the highest occupied molecular orbital(HOMO) energy level of the material in described intermediate layer is between 5.3-5.5eV, and lowest unoccupied molecular orbital (LUMO) energy level is between 2.6-3.3eV.
7. the OLED blue-light device that improves the life-span as claimed in claim 6, it is characterized in that, the material in described intermediate layer is green glow, gold-tinted and red emitting material, comprising there being 10-(2-[4-morpholinodithio base)-2, 3, 6, 7-tetrahydrochysene-1, 1, 7, 7-tetramethyl-1H, 5H, 11H-(1) chromene, rubrene, 4-(dicyano methylene)-2-uncle-butyl-6-(1, 1, 7, 7-tetramethyl julolidine-9-thiazolinyl)-4H-pyrans, and 4-(dicyano methylene)-2-isopropyl-6-(1, 1, 7, 7-tetramethyl julolidine-9-thiazolinyl)-4H-pyrans.
8. the OLED blue-light device that improves the life-span as claimed in claim 6, is characterized in that, the material in described intermediate layer has the one in following general structure:
Figure 936864DEST_PATH_IMAGE001
(I)
Figure 332073DEST_PATH_IMAGE002
(II)
Figure 208763DEST_PATH_IMAGE003
(III)
Figure 827963DEST_PATH_IMAGE004
(IV)
Wherein R 1, R 2, R 3, R 4, R 5, R 6for H, C atomicity be 1 ~ 4 alkyl, CH 3o, halogen atom, CF 3, NO 2, CN, (CH3) 2n, phenyl, p-methylphenyl, o-methyl-phenyl-, p-methoxyphenyl, 4-(N, N '-dimethyl) anilino-, 2-pyridine radicals, 1-naphthyl, 4-quinolyl, p-methoxyphenyl, p-isopropyl phenyl, to tert-butyl-phenyl, xenyl, to the one in Phenoxyphenyl.
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Cited By (4)

* Cited by examiner, † Cited by third party
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CN104569776A (en) * 2014-12-18 2015-04-29 复旦大学 Method for measuring effective migration rate of electrons in OLED device with multiple light emitting layers
CN106574179A (en) * 2014-08-13 2017-04-19 三星Sdi株式会社 Organic photoelectronic device and display device
CN106749200A (en) * 2016-12-14 2017-05-31 中节能万润股份有限公司 Ketone electroluminescent organic material of a kind of chromene 4 and its preparation method and application
US10319931B2 (en) 2016-03-23 2019-06-11 Boe Technology Group Co., Ltd. Light emitting device, method for manufacturing light emitting device, and display device

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CN103165815A (en) * 2011-12-14 2013-06-19 海洋王照明科技股份有限公司 Undoped efficient white organic emitting device and preparation method thereof
CN103426902A (en) * 2012-05-22 2013-12-04 乐金显示有限公司 Organic light emitting device and method of fabricating the same

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KR20090035896A (en) * 2007-10-08 2009-04-13 엘지디스플레이 주식회사 Organic light emitting display
CN102208433A (en) * 2010-03-31 2011-10-05 三星移动显示器株式会社 Organic light-emitting display apparatus
CN103165815A (en) * 2011-12-14 2013-06-19 海洋王照明科技股份有限公司 Undoped efficient white organic emitting device and preparation method thereof
CN103426902A (en) * 2012-05-22 2013-12-04 乐金显示有限公司 Organic light emitting device and method of fabricating the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106574179A (en) * 2014-08-13 2017-04-19 三星Sdi株式会社 Organic photoelectronic device and display device
CN106574179B (en) * 2014-08-13 2019-03-29 三星Sdi株式会社 Organic photoelectric device and display device
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CN104569776A (en) * 2014-12-18 2015-04-29 复旦大学 Method for measuring effective migration rate of electrons in OLED device with multiple light emitting layers
US10319931B2 (en) 2016-03-23 2019-06-11 Boe Technology Group Co., Ltd. Light emitting device, method for manufacturing light emitting device, and display device
CN106749200A (en) * 2016-12-14 2017-05-31 中节能万润股份有限公司 Ketone electroluminescent organic material of a kind of chromene 4 and its preparation method and application

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