CN103887379A - Method for reducing GaN epitaxial defects through wet etching - Google Patents
Method for reducing GaN epitaxial defects through wet etching Download PDFInfo
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- CN103887379A CN103887379A CN201410123683.XA CN201410123683A CN103887379A CN 103887379 A CN103887379 A CN 103887379A CN 201410123683 A CN201410123683 A CN 201410123683A CN 103887379 A CN103887379 A CN 103887379A
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- gallium nitride
- sapphire wafer
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- 230000007547 defect Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000001039 wet etching Methods 0.000 title claims abstract description 22
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 96
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 53
- 239000010980 sapphire Substances 0.000 claims abstract description 53
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002253 acid Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 238000000407 epitaxy Methods 0.000 claims description 18
- 239000012670 alkaline solution Substances 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 15
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 12
- 229910052749 magnesium Inorganic materials 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 12
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 6
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- Led Devices (AREA)
Abstract
The invention provides a method for reducing GaN epitaxial defects through wet etching. The method comprises the following steps that (1) non-doped gallium nitride is grown on a sapphire wafer; (2) the sapphire wafer is placed into an acid solution and then taken out to be cleaned through ionized water and spin-dried; (3) the sapphire wafer cleaned and spin-dried in the step (2) is made to grow again; (4) a GaN base is bonded on a silicon substrate and the sapphire wafer is peeled off by using high-temperature lattice mismatching stress. According to the method for reducing the GaN epitaxial defects through wet etching, the acid solution is used, and screw dislocation and mixed dislocation can be avoided.
Description
Technical field
The present invention relates to LED growth technology field, relate in particular to a kind of method that reduces GaN epitaxy defect with wet etching.
Background technology
GaN is grown on sapphire substrate conventionally, has relatively high defect concentration 1x10
8-9/ cm
2, reason is the larger lattice mismatch between GaN and sapphire.Aspect LED device property, fault in material is an important limiting factor; In the time that emission wavelength extends to ultraviolet or green glow from blue light, this problem becomes more serious.From report technology, the method addressing this problem is epitaxial lateral overgrowth (ELOG, Epitaxial Lateral Over Growth), defect barrier layer (DBL, Defect Blocking La
xand patterned sapphire substrate (PSS, Pattern Sapphire Substrate) er).
ELOG method is used a kind of GaN template of oxide patterns, and this can make defect concentration reduce 1-2 the order of magnitude.But defect reduces the region that only occurs in oxide covering, be conventionally limited in the region of 3-5 μ m, be difficult to extend to continuous bulk region.This has just limited the application of this technology in practical devices.
DBL method is the SiNx growth of inserting the short time during GaN epitaxial growth, and this SiNx is easy to, in defect area growth, play the effect of shielding defect; Follow-up GaN growth defect reduces approximately order of magnitude.But the SiNx forming at fault location has statistical law in essence, so be difficult to control.
PSS method adopts the Sapphire Substrate of 3-D graphic array, such as domed shape.Three-dimensional dome geometric figure plays two effects or object.The first, 3D dome impels GaN cross growth, the ELOG method of mentioning before the cross growth is here similar to, and cause defect to reduce.The second, 3D dome geometric figure can help light to escape widely, thereby increases total optical output power.At present, the method is successfully applied to production, but it has increased a large amount of substrate expenses.
Therefore, how effectively to reduce GaN epitaxy defect on sapphire is the focus that industry is paid close attention to always, thereby improves the luminous efficiency of LED.
My department once applied for that 1 application number was: 201310449306.0 patent, has wherein adopted the method for alkaline solution wet etching to address the above problem.Usually there are three kinds of dislocations in the outer Yanzhong of GaN: edge dislocation, screw dislocation and mixed dislocation.Alkaline solution corrosion can solve edge dislocation and mixed dislocation, but can not alleviate screw dislocation.
Summary of the invention
In order to solve existing technical problem in background technology, the present invention proposes a kind of method that reduces GaN epitaxy defect with wet etching, use acid solution, can solve screw dislocation and mixed dislocation.
Technical solution of the present invention is: a kind of method that reduces GaN epitaxy defect with wet etching, and its special character is: said method comprising the steps of:
1) the non-doped gallium nitride of growing on sapphire wafer;
2) sapphire wafer is put into acid solution, takes out afterwards with ionized water and cleans and dry;
3) by step 2) clean dry after sapphire wafer grow again;
4) GaN base key is combined on silicon substrate, utilizes high temperature lattice mismatch stress to peel off sapphire substrate.
Above-mentioned steps 2) also comprise before the grown sapphire wafer of non-doped gallium nitride of step 1) is put into the alkaline solution of melting, take out afterwards with ionized water and clean and dry.
Above-mentioned steps 2) also comprise step 2 afterwards) clean after sapphire wafer put into the alkaline solution of melting, take out afterwards with ionized water clean dry.
Above-mentioned steps 1) concrete steps be:
1.1) sapphire wafer is put into MOCVD;
1.2) regulate in MOCVD temperature to 500-600 DEG C, pressure 600 torrs, make the GaN 30nm that grows on sapphire wafer;
1.3) temperature in MOCVD is increased to 1000-1100 DEG C, pressure 400 torrs, non-doped gallium nitride 1.2um grows.
The time that above-mentioned sapphire wafer is put into the alkaline solution of melting is 5-15 minute, and the temperature of alkaline solution is 300-400 DEG C, and alkaline solution is KOH or NaOH;
The time that above-mentioned sapphire wafer is put into the KOH solution of melting is 10 minutes, and the temperature of KOH solution is 350 DEG C.
Above-mentioned steps 2) in sapphire wafer time of putting into acid solution be 10-60 minutes, the temperature of acid solution is 100-300 DEG C.
Above-mentioned steps 2) in acid solution be H
3pO
4.
Above-mentioned steps 3) concrete steps are: sapphire wafer are reentered in MOCVD chamber and grown, the non-doped gallium nitride of growing successively, mix silicon gallium nitride, Multiple Quantum Well and mix magnesium gallium nitride; The described non-doped gallium nitride of growing successively, the design parameter of mixing silicon gallium nitride, Multiple Quantum Well and mixing magnesium gallium nitride are: air pressure 400 torrs, 1050 DEG C of temperature, to pass into gas be trimethyl gallium and ammonia, generates the non-doped gallium nitride of 1.5-2.5um; Air pressure 300 torrs, 1050 DEG C of temperature, pass into gas trimethyl gallium, ammonia and N-type doped source silane, generate 2-3um and mix silicon gallium nitride; Air pressure 200 torrs, 950 DEG C of temperature, to pass into gas be trimethyl gallium, ammonia and P type doped source two luxuriant magnesium, generates 0.3um and mix magnesium gallium nitride; The parameter of Multiple Quantum Well: 10 pairs of indium gallium nitrogen (InGaN3nm)/gallium nitride (GaN12nm), the thickness of every pair is 15nm; The growth conditions of indium gallium nitrogen is: air pressure 300 torrs, 760 DEG C of temperature, pass into gas trimethyl indium, triethyl-gallium, ammonia, generate 3nm indium gallium nitrogen; The growth conditions of gallium nitride is: air pressure 300 torrs, 865 DEG C of temperature, pass into gas triethyl-gallium, ammonia, generate 12nm gallium nitride.
Above-mentioned steps 2) in sapphire wafer put into H
3pO
4the time of solution is 15 minutes, H
3pO
4the temperature of solution is 200 DEG C.
The present invention proposes a kind of method that reduces GaN epitaxy defect with wet etching, reduces the method for GaN defect concentration by GaN/ sapphire interface etching---after U-GaN growth finishes, carry out wet etching (phosphoric acid+sulfuric acid solution or KOH wet etching); See through GaN defect and be etched to GaN/ sapphire interface, and along interface etching, and then wafer again enters epitaxial device and re-starts GaN epitaxial growth---U-GaN, thereby fill up U-GaN surface;
The passage being etched, the GaN Hui regrowing is growing GaN on the GaN of Ke Shi Over directly, and Hui does not grow on sapphire.GaN part stress is released like this, and the low defect concentration ， Ci System journey Hui of GaN Hui You More regrowing leaves the Zi of Daoing Jin Ta Knot Agencies at the GaN place of sapphire interface, and this Zi of Daoing Jin Ta Knot Agencies can increase light extraction efficiency.GaN extension advantage with the method growth: 1) defect reduces 1-2 the order of magnitude (from 10
9/ cm
2→ 10
8-10
7/ cm
2); 2) the lattice mismatch stress of GaN and sapphire substrate Zhi Inter greatly reduces; 3) increase extension electricity and cause luminous power (EL-LOP@20mA); 4) utilize the peelable sapphire substrate of flip chip technology, carry out secondary epitaxy growth.
Use acid solution, can solve screw dislocation and mixed dislocation.After corroding in conjunction with alkaline and acid solution, can reduce the dislocation density of three types simultaneously simultaneously, improve the crystal mass of GaN, finally promote the brightness of LED.The present invention simultaneously, compared with using alkaline solution, due to the reduction of material price and serviceability temperature, makes cost obviously reduce, and can produce in batches faster; Secondly experimental implementation can simpler and better control of corrosive effect.
Brief description of the drawings
Fig. 1 is principle schematic of the present invention;
Fig. 2-Fig. 5 is method schematic diagram of the present invention;
Embodiment
Referring to Fig. 1-Fig. 5, the invention provides a kind of method that reduces GaN epitaxy defect with wet etching, comprise the following steps:
1) the non-doped gallium nitride of growing on sapphire wafer; Concrete steps are:
1.1) sapphire wafer is put into MOCVD;
1.2) regulate in MOCVD temperature to 500-600 DEG C, pressure 600 torrs, make the GaN 30nm that grows on sapphire wafer;
1.3) temperature in MOCVD is increased to 1000-1100 DEG C, pressure 400 torrs, non-doped gallium nitride 1.2um grows.
2) _ and sapphire wafer is put into acid solution, take out afterwards with ionized water and clean and dry; The time that sapphire wafer is put into acid solution is 10-60 minutes, and the temperature of acid solution is 100-300 DEG C.Acid solution is H
3pO
4.Sapphire wafer is put into H
3pO
4the time of solution is 15 minutes, H
3pO
4the temperature of solution is 200 DEG C.
3) by step 2) clean dry after sapphire wafer grow again; Concrete steps are: sapphire wafer is reentered in MOCVD chamber and is grown, the non-doped gallium nitride of growing successively, mix silicon gallium nitride, Multiple Quantum Well and mix magnesium gallium nitride; The described non-doped gallium nitride of growing successively, the design parameter of mixing silicon gallium nitride, Multiple Quantum Well and mixing magnesium gallium nitride are: air pressure 400 torrs, 1050 DEG C of temperature, to pass into gas be trimethyl gallium and ammonia, generates the non-doped gallium nitride of 1.5-2.5um; Air pressure 300 torrs, 1050 DEG C of temperature, pass into gas trimethyl gallium, ammonia and N-type doped source silane, generate 2-3um and mix silicon gallium nitride; Air pressure 200 torrs, 950 DEG C of temperature, to pass into gas be trimethyl gallium, ammonia and P type doped source two luxuriant magnesium, generates 0.3um and mix magnesium gallium nitride; The parameter of Multiple Quantum Well: 10 pairs of indium gallium nitrogen (InGaN3nm)/gallium nitride (GaN12nm), the thickness of every pair is 15nm; The growth conditions of indium gallium nitrogen is: air pressure 300 torrs, 760 DEG C of temperature, pass into gas trimethyl indium, triethyl-gallium, ammonia, generate 3nm indium gallium nitrogen; The growth conditions of gallium nitride is: air pressure 300 torrs, 865 DEG C of temperature, pass into gas triethyl-gallium, ammonia, generate 12nm gallium nitride.
4) GaN base key is combined on silicon substrate, utilizes high temperature lattice mismatch stress to peel off sapphire substrate.
Step 2) also comprise before the grown sapphire wafer of non-doped gallium nitride of step 1) is put into the alkaline solution of melting, take out afterwards with ionized water and clean and dry.This step also can be placed on step 2) carry out afterwards;
The time that sapphire wafer is put into the alkaline solution of melting is 5-15 minute, and the temperature of alkaline solution is 300-400 DEG C, and alkaline solution is KOH or NaOH; Preferably to put into the time of the KOH solution of melting be 10 minutes to sapphire wafer, and the temperature of KOH solution is 350 DEG C.
Claims (10)
1. the method that reduces GaN epitaxy defect with wet etching, is characterized in that: said method comprising the steps of:
1) the non-doped gallium nitride of growing on sapphire wafer;
2) sapphire wafer is put into acid solution, take out afterwards with ionized water and clean and dry;
3) by step 2) clean dry after sapphire wafer grow again;
4) GaN base key is combined on silicon substrate, utilizes high temperature lattice mismatch stress to peel off sapphire substrate.
2. the method that reduces GaN epitaxy defect with wet etching according to claim 1, it is characterized in that: described step 2) also comprise before the grown sapphire wafer of non-doped gallium nitride of step 1) is put into the alkaline solution of melting, take out afterwards with ionized water and clean and dry.
3. the method that reduces GaN epitaxy defect with wet etching according to claim 1, is characterized in that: described step 2) also comprise step 2 afterwards) sapphire wafer after cleaning puts into the alkaline solution of melting, take out afterwards with ionized water and clean and dry.
4. according to the method with wet etching minimizing GaN epitaxy defect described in claim 1 or 2 or 3, it is characterized in that: the concrete steps of described step 1) are:
1.1) sapphire wafer is put into MOCVD;
1.2) regulate in MOCVD temperature to 500-600 DEG C, pressure 600 torrs, make the GaN 30nm that grows on sapphire wafer;
1.3) temperature in MOCVD is increased to 1000-1100 DEG C, pressure 400 torrs, non-doped gallium nitride 1.2um grows.
5. the method that reduces GaN epitaxy defect with wet etching according to claim 4, it is characterized in that: the time that described sapphire wafer is put into the alkaline solution of melting is 5-15 minute, the temperature of alkaline solution is 300-400 DEG C, and alkaline solution is KOH or NaOH.
6. the method that reduces GaN epitaxy defect with wet etching according to claim 5, is characterized in that: the time that described sapphire wafer is put into the KOH solution of melting is 10 minutes, and the temperature of KOH solution is 350 DEG C.
7. the method that reduces GaN epitaxy defect with wet etching according to claim 4, is characterized in that: described step 2) in sapphire wafer time of putting into acid solution be 10-60 minutes, the temperature of acid solution is 100-300 DEG C.
8. the method that reduces GaN epitaxy defect with wet etching according to claim 7, is characterized in that: described step 2) in acid solution be H
3pO
4.
9. the method that reduces GaN epitaxy defect with wet etching according to claim 1, it is characterized in that: described step 3) concrete steps are: sapphire wafer is reentered in MOCVD chamber and is grown, the non-doped gallium nitride of growing successively, mix silicon gallium nitride, Multiple Quantum Well and mix magnesium gallium nitride; The described non-doped gallium nitride of growing successively, the design parameter of mixing silicon gallium nitride, Multiple Quantum Well and mixing magnesium gallium nitride are: air pressure 400 torrs, 1050 DEG C of temperature, to pass into gas be trimethyl gallium and ammonia, generates the non-doped gallium nitride of 1.5-2.5um; Air pressure 300 torrs, 1050 DEG C of temperature, pass into gas trimethyl gallium, ammonia and N-type doped source silane, generate 2-3um and mix silicon gallium nitride; Air pressure 200 torrs, 950 DEG C of temperature, to pass into gas be trimethyl gallium, ammonia and P type doped source two luxuriant magnesium, generates 0.3um and mix magnesium gallium nitride; The parameter of Multiple Quantum Well: 10 pairs of indium gallium nitrogen (InGaN3nm)/gallium nitride (GaN12nm), the thickness of every pair is 15nm; The growth conditions of indium gallium nitrogen is: air pressure 300 torrs, 760 DEG C of temperature, pass into gas trimethyl indium, triethyl-gallium, ammonia, generate 3nm indium gallium nitrogen; The growth conditions of gallium nitride is: air pressure 300 torrs, 865 DEG C of temperature, pass into gas triethyl-gallium, ammonia, generate 12nm gallium nitride.
10. the method that reduces GaN epitaxy defect with wet etching according to claim 8, is characterized in that: described step 2) in sapphire wafer put into H
3pO
4the time of solution is 15 minutes, H
3pO
4the temperature of solution is 200 DEG C.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104060323A (en) * | 2014-07-14 | 2014-09-24 | 山东大学 | Method for obtaining self-supported GaN monocrystal by preparing substrate with N-sided conical structure |
| CN104465899A (en) * | 2014-11-28 | 2015-03-25 | 西安神光皓瑞光电科技有限公司 | Preparation method for LED perpendicular structure |
| CN104701427A (en) * | 2015-02-13 | 2015-06-10 | 西安神光皓瑞光电科技有限公司 | Vertical LED chip preparation method |
| CN104851945A (en) * | 2015-04-17 | 2015-08-19 | 西安神光皓瑞光电科技有限公司 | Vertical-structure LED chip manufacturing method |
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222738A (en) * | 2011-06-23 | 2011-10-19 | 西安神光安瑞光电科技有限公司 | Method for manufacturing GaN (gallium nitride) substrate material |
| US20130320404A1 (en) * | 2012-05-31 | 2013-12-05 | Alexander Usenko | Gallium nitride to silicon direct wafer bonding |
-
2014
- 2014-03-28 CN CN201410123683.XA patent/CN103887379B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222738A (en) * | 2011-06-23 | 2011-10-19 | 西安神光安瑞光电科技有限公司 | Method for manufacturing GaN (gallium nitride) substrate material |
| US20130320404A1 (en) * | 2012-05-31 | 2013-12-05 | Alexander Usenko | Gallium nitride to silicon direct wafer bonding |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104060323A (en) * | 2014-07-14 | 2014-09-24 | 山东大学 | Method for obtaining self-supported GaN monocrystal by preparing substrate with N-sided conical structure |
| CN104465899A (en) * | 2014-11-28 | 2015-03-25 | 西安神光皓瑞光电科技有限公司 | Preparation method for LED perpendicular structure |
| CN104701427A (en) * | 2015-02-13 | 2015-06-10 | 西安神光皓瑞光电科技有限公司 | Vertical LED chip preparation method |
| CN104851945A (en) * | 2015-04-17 | 2015-08-19 | 西安神光皓瑞光电科技有限公司 | Vertical-structure LED chip manufacturing method |
| CN104851945B (en) * | 2015-04-17 | 2017-06-09 | 西安神光皓瑞光电科技有限公司 | A kind of light emitting diode (LED) chip with vertical structure preparation method |
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
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