CN103872927A - High-frequency voltage transformation and rectification integrated device - Google Patents
High-frequency voltage transformation and rectification integrated device Download PDFInfo
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- CN103872927A CN103872927A CN201410130382.XA CN201410130382A CN103872927A CN 103872927 A CN103872927 A CN 103872927A CN 201410130382 A CN201410130382 A CN 201410130382A CN 103872927 A CN103872927 A CN 103872927A
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Abstract
The invention discloses a high-frequency voltage transformation and rectification integrated device. According to the device, a rectifier diode is in serial connection with a secondary coil of a high-frequency transformer, the mode that all devices are independent and are connected through copper bars or wires in the prior art is changed, connection without cables or the copper bars of the rectifier diode and the high-frequency transformer is achieved due to ingenious design, and accordingly the high-frequency transformer and the rectifier diode are integrated organically and compactly; a diode is directly connected with an upper shell and a lower shell of a secondary coil assembly and can be cooled through the upper shell and the lower shell, and therefore heat dissipation design of the diode is avoided; meanwhile, by means of the device, four output electrodes at the bottom of the transformer of the original scheme are reduced to two output electrodes, and accordingly the structure of the bottom of the transformer is simplified. Compared with the prior art, the size of the integrated device is greatly reduced.
Description
Technical field
The present invention relates to a kind of voltage transforming rectifier, particularly a kind of high frequency transformation commutation integrated device.
Background technology
The high frequency transformer of high-frequency inversion DC power supply and rectification circuit are one of key factors determining power source performance, traditional high-frequency inversion rectification circuit adopts the separate frame mode of each several part device, IGBT assembly, high frequency transformer, output rectification circuit, drive circuits etc. are separate, between device, connect by wire or copper bar, connection between high-current device, because the specification of wire or copper bar is large, make its complex circuit, loss produces electromagnetic interference to peripheral circuits greatly and easily, reduce and use wire or copper bar, can reduce product cost, enhance product performance.
At present, high-frequency inversion DC power supply medium/high frequency transformer and rectifier diode are relatively independent, and (its circuit diagram and structure chart are as Fig. 1, Fig. 2), conventionally secondary coil profile is square or rectangular structure, 4 electrodes of the secondary output of high frequency transformer are all positioned at transformer bottom, 2 different name termination electrodes of transformer secondary output are connected respectively to high-frequency rectification diode D1, the positive pole of D2, another 2 the different name termination electrodes of transformer secondary output are exported as power cathode after being connected, because output current is large, connect copper bar sectional area large, this type of syndeton has following drawback: 1, transformer bottom leakage field is larger, transformer bottom can produce high-frequency induction heating effect, 2, high-frequency magnetic leakage causes electromagnetic interference near circuit bottom, and power supply stability and reliability reduce, 3, the leakage inductance that transformer leakage field produces causes in the time of the IGBT of transformer front end inverter switching device and produces too high peak voltage, and this peak voltage will constitute a threat to IGBT device, 4, because output electrode connection cross section, transformer bottom is less, output current is larger, and the connection of existing structure employing screw fastening, causes resistance loss large heating in junction serious, and power supply reliability reduces, 5, polycrystalline substance is drawn 4 electrodes, wherein 2 electrode short circuit outputs are exported as power-, another 2 electrodes are connected respectively to rectifier diode and go as positive output, the multi-link complexity of number of electrodes, diode adopts copper bar to be connected with transformer conventionally, causes the shortcomings such as inverter volume is large, assembling is complicated, difficult in maintenance, reliability reduction.
Summary of the invention
Technical problem to be solved by this invention is, a kind of compact conformation is provided, and loss is little, stable electrical properties high frequency transformation commutation integrated device.
To achieve these goals, the technical solution used in the present invention is:
A kind of high frequency transformation commutation integrated device, comprise toroidal core, primary coil, connect stem stem, first level coil block, second subprime coil block, described connection stem stem comprises the semicolumn that two distortions 180 are spent, described two halves cylinder twist, and mutually insulated, described first level coil block comprises upper casing, lower casing and be connected on the diode between lower casing, on described upper casing and lower casing, be provided with output connecting hole, described second subprime coil block comprises upper casing, lower casing and be connected on the diode between lower casing, described diode is anti-phase than the diode of First Line coil assembly, on described upper casing and lower casing, be provided with output connecting hole, described primary coil is wound on toroidal core, described connection stem stem is vertically positioned at toroidal core center, the upper end of described the first semicolumn connects the upper casing of First Line coil assembly, lower end connects the lower casing of the second coil block, the upper end of described the second semicolumn connects the upper casing of the second coil block, lower end connects the lower casing of First Line coil assembly.
As preferred version of the present invention, in described first level coil block and second subprime coil block, upper casing and lower casing are made up of aluminium.
As preferred version of the present invention, in described first level coil block and second subprime coil block, on upper casing and lower casing, be provided with water-cooling channel.
As preferred version of the present invention, described first level coil block with second subprime coil block to be connected stem stem center as Rotational Symmetry.
As preferred version of the present invention, in described first level coil block and second subprime coil block, diode is positioned on assembly side.
In sum, owing to having adopted technique scheme, the invention has the beneficial effects as follows:
1, the present invention is series at rectifier diode in high frequency transformer secondary coil, change in the past each device independent, the mode connecting with copper bar or electric wire between device, design has cleverly realized without cable or copper bar rectifier diode and high frequency transformer to be connected, to make high frequency transformer and rectifier diode become an organic close-connected entirety; Its diode is directly connected on the upper lower casing of secondary coil assembly, and diode can be cooling by upper lower casing, has avoided the heat dissipation design of diode; Simultaneously the present invention makes 4 output electrodes in former scheme transformer bottom change into 2 output electrodes, has simplified the structure of transformer bottom, compares with traditional structure, and volume has significantly and reduces;
2, upper and lower surface of the present invention can, separately as output electrode, also can be with respectively two loads simultaneously, and output electrode area is large and easy connection draw copper bar;
3, polycrystalline substance of the present invention is simple, and connects stem stem and housing employing welding procedure, has solved output electrode cross section less, causes the serious problem of the large heating of junction loss, has improved power supply reliability;
4, the present invention, around almost without HF leakage magnetic field, has reduced the electromagnetic interference to peripheral circuits, has improved Electro Magnetic Compatibility;
5, leakage field of the present invention is little, and the peak voltage producing while making the IGBT inverter switching device of transformer front end reduces, and has improved IGBT device reliability of operation;
6, symmetrical structure of the present invention, has ensured that each diode branch has more approaching electric parameter, and the electric current that each diode is shared is comparatively average;
7, the present invention has flat structure, and its flat structure can be saved connection copper bar in the time that many pack modules are in parallel, can be combined into easily more powerful power supply.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of traditional vertoro.
Fig. 2 is the structural representation of traditional vertoro.
Fig. 3 is the circuit theory diagrams of high frequency transformation commutation integrated device of the present invention.
Fig. 4 is the structural representation of high frequency transformation commutation integrated device of the present invention.
Fig. 5 is the structure chart of high frequency transformation commutation integrated device of the present invention.
Fig. 6 is the structure cutaway view of high frequency transformation commutation integrated device of the present invention.
Mark in figure: 1 is toroidal core, 2 is primary coil, 3 for connecting stem stem, 4 is first level coil block, and 5 is second subprime coil block, and 6 is water-cooling channel, 31 is the first semicolumn, and 32 is the second semicolumn, and 41 is upper casing, 42 is lower casing, and 43 is diode, and 44 is output connecting hole, 51 is upper casing, 52 is lower casing, and 53 is diode, and 54 is output connecting hole.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
As shown in Figure 5 and Figure 6, high frequency transformation commutation integrated device of the present invention, comprise toroidal core 1, primary coil 2, connect stem stem 3, first level coil block 4, second subprime coil block 5, described connection stem stem 3 comprises the semicolumn that two distortions 180 are spent, described two halves cylinder twist, and mutually insulated, described first level coil block 4 comprises upper casing 41, lower casing 42 and be connected on the diode 43 between lower casing, on described upper casing 41 and lower casing 42, be provided with output connecting hole 44, described second subprime coil block 5 comprises upper casing 51, lower casing 52 and be connected on the diode 53 between lower casing, described diode 53 is anti-phase than the diode 43 of First Line coil assembly, on described upper casing 51 and lower casing 52, be provided with output connecting hole 54, described primary coil 2 is wound on toroidal core 1, described connection stem stem 3 is vertically positioned at toroidal core 1 center, the upper end of described the first semicolumn 31 connects the upper casing 41 of First Line coil assembly 4, lower end connects the lower casing 52 of the second coil block 5, the upper end of described the second semicolumn 32 connects the upper casing 51 of the second coil block 5, lower end connects the lower casing 42 of First Line coil assembly 4.
As shown in Figure 5 and Figure 6, in high frequency transformation commutation integrated device of the present invention, in first level coil block 4 and second subprime coil block 5, upper casing and lower casing design are made up of aluminium, and it is high that aluminium has coefficient of heat transfer, conducts electricity very well, the advantages such as processability is strong, and cost is low; For strengthening heat radiation, in first level coil block 4 and second subprime coil block 5, on upper casing and lower casing, be respectively designed with 2 water-cooling channels 6, parallel upper casing or the lower casing of penetrating of each water-cooling channel, each water-cooling channel is connected into one by elbow; Consider electric current current-sharing and reduce part kind, it is Rotational Symmetry that first level coil block 4 is designed to be connected stem stem 3 centers with second subprime coil block 5, uses different modes of installing by a kind of secondary coil assembly, forms two kinds of secondary coil assemblies; For reducing design difficulty, the convenient output copper bar that connects, in described first level coil block 4 and second subprime coil block 5, diode design is positioned on assembly side, designs on the left and right side of secondary coil herein.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. a high frequency transformation commutation integrated device, it is characterized in that: comprise toroidal core (1), primary coil (2), connect stem stem (3), first level coil block (4), second subprime coil block (5), described connection stem stem (3) comprises the semicolumn that two distortions 180 are spent, described two halves cylinder twist, and mutually insulated, described first level coil block (4) comprises upper casing (41), lower casing (42) and be connected on the diode (43) between lower casing, on described upper casing (41) and lower casing (42), be provided with output connecting hole (44), described second subprime coil block (5) comprises upper casing (51), lower casing (52) and be connected on the diode (53) between lower casing, described diode (53) is anti-phase than the diode (43) of First Line coil assembly, on described upper casing (51) and lower casing (52), be provided with output connecting hole (54), described primary coil (2) is wound on toroidal core (1), described connection stem stem (3) is vertically positioned at toroidal core (1) center, the upper end of described the first semicolumn (31) connects the upper casing (41) of First Line coil assembly (4), lower end connects the lower casing (52) of the second coil block (5), the upper end of described the second semicolumn (32) connects the upper casing (51) of the second coil block (5), lower end connects the lower casing (42) of First Line coil assembly (4).
2. high frequency transformation commutation integrated device according to claim 1, is characterized in that: in described first level coil block (4) and second subprime coil block (5), upper casing and lower casing are made up of aluminium.
3. high frequency transformation commutation integrated device according to claim 1 and 2, is characterized in that: in described first level coil block (4) and second subprime coil block (5), be provided with water-cooling channel (6) on upper casing and lower casing.
4. high frequency transformation commutation integrated device according to claim 3, is characterized in that: described first level coil block (4) with second subprime coil block (5) to be connected stem stem (3) center as Rotational Symmetry.
5. high frequency transformation commutation integrated device according to claim 4, is characterized in that: in described first level coil block (4) and second subprime coil block (5), diode is positioned on assembly side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410130382.XA CN103872927B (en) | 2014-04-02 | 2014-04-02 | High frequency Transformer Rectifier integrated apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410130382.XA CN103872927B (en) | 2014-04-02 | 2014-04-02 | High frequency Transformer Rectifier integrated apparatus |
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| CN103872927A true CN103872927A (en) | 2014-06-18 |
| CN103872927B CN103872927B (en) | 2016-09-21 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6018904A (en) * | 1983-07-12 | 1985-01-31 | Murata Mfg Co Ltd | Flyback transformer with variable resistor |
| US5023768A (en) * | 1989-11-24 | 1991-06-11 | Varian Associates, Inc. | High voltage high power DC power supply |
| CN2512196Y (en) * | 2001-11-20 | 2002-09-18 | 南京欣德卫科医疗设备技术开发有限公司 | Portable X-ray unit with integrated transformer |
| CN201072698Y (en) * | 2007-01-26 | 2008-06-11 | 刘福全 | Integrated designing medium and high frequency transformer |
| CN201466976U (en) * | 2009-08-20 | 2010-05-12 | 石新春 | Integrated high-frequency rectifier device |
| CN102710147A (en) * | 2012-05-31 | 2012-10-03 | 绍兴市承天电器有限公司 | Water-cooling high-frequency rectification device |
| CN102956350A (en) * | 2012-11-12 | 2013-03-06 | 华南理工大学 | Integrated high-frequency power transformer |
| CN203747674U (en) * | 2014-04-02 | 2014-07-30 | 四川英杰电气股份有限公司 | High frequency transformation rectification and integration apparatus |
-
2014
- 2014-04-02 CN CN201410130382.XA patent/CN103872927B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6018904A (en) * | 1983-07-12 | 1985-01-31 | Murata Mfg Co Ltd | Flyback transformer with variable resistor |
| US5023768A (en) * | 1989-11-24 | 1991-06-11 | Varian Associates, Inc. | High voltage high power DC power supply |
| CN2512196Y (en) * | 2001-11-20 | 2002-09-18 | 南京欣德卫科医疗设备技术开发有限公司 | Portable X-ray unit with integrated transformer |
| CN201072698Y (en) * | 2007-01-26 | 2008-06-11 | 刘福全 | Integrated designing medium and high frequency transformer |
| CN201466976U (en) * | 2009-08-20 | 2010-05-12 | 石新春 | Integrated high-frequency rectifier device |
| CN102710147A (en) * | 2012-05-31 | 2012-10-03 | 绍兴市承天电器有限公司 | Water-cooling high-frequency rectification device |
| CN102956350A (en) * | 2012-11-12 | 2013-03-06 | 华南理工大学 | Integrated high-frequency power transformer |
| CN203747674U (en) * | 2014-04-02 | 2014-07-30 | 四川英杰电气股份有限公司 | High frequency transformation rectification and integration apparatus |
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| CN103872927B (en) | 2016-09-21 |
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