CN103872185A - Field-effect inter-digitated back contact photovoltaic device and forming method therefor - Google Patents

Field-effect inter-digitated back contact photovoltaic device and forming method therefor Download PDF

Info

Publication number
CN103872185A
CN103872185A CN201310629464.4A CN201310629464A CN103872185A CN 103872185 A CN103872185 A CN 103872185A CN 201310629464 A CN201310629464 A CN 201310629464A CN 103872185 A CN103872185 A CN 103872185A
Authority
CN
China
Prior art keywords
metal contact
dielectric
epitaxial loayer
composition
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310629464.4A
Other languages
Chinese (zh)
Other versions
CN103872185B (en
Inventor
K·E·福格尔
B·赫克玛特绍塔巴里
D·K·萨丹那
G·G·沙希迪
D·沙赫莉亚迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/718,748 external-priority patent/US8642378B1/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN103872185A publication Critical patent/CN103872185A/en
Application granted granted Critical
Publication of CN103872185B publication Critical patent/CN103872185B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03687—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline AIVBIV alloys, e.g. uc-SiGe, uc-SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to afield-effect inter-digitated back contact photovoltaic device and a forming method therefor. The method includes patterning a dielectric layer on a substrate to form a patterned dielectric having local spacings between shapes and remote spacings between groups of shapes, and depositing a doped epitaxial layer over the patterned dielectric such that selective crystalline growth occurs in portions of the epitaxial layer in contact with the substrate and noncrystalline growth occurs in portions of the epitaxial layer in contact with the patterned dielectric. First metal contacts are formed over the local spacings of the patterned dielectric, and second metal contacts are formed over the remote spacings. Exposed portions of the noncrystalline growth are etched using the first and second metal contacts as an etch mask to form alternating interdigitated emitter and back contact stacks.

Description

The interdigital back of the body contact of field effect photovoltaic device and forming method thereof
Related application data
The U.S. Patent application that the application and sequence number commonly assigned and common unsettled, that submit on February 23rd, 2011 are 13/032,866 is relevant, and the full text of this U.S. Patent application mode is by reference incorporated in the application.
Technical field
The present invention relates to photovoltaic device, more specifically relate to the interdigital contact structures of raising the efficiency.
Background technology
Both formed emitter (emitter) and also form back surface field (BSF) and increase the short circuit current (J of solar cell for the back side by solar cell sc) (and therefore raising the efficiency), interdigital back of the body contact (IBC) solar battery structure receives publicity.This allows sunlight to enter from front with minimum eclipsing loss.In heterojunction solar battery, emitter lamination (stack) can be by the hydrogenated amorphous Si(a-Si:H of battery front side) form, and emitter in homojunction solar cell is made up of crystal Si.
IBC heterojunction solar battery need to comprise composition (patterned) emitter, and BSF amorphous Si lamination need to suitably be aimed at.This has increased the complexity of manufacturing, and has therefore increased manufacturing cost.In addition, if adopt photoetching to carry out composition to the first lamination, be difficult in the situation that not damaging the first lamination, remove residue, the etching that photoetching causes before the second lamination and/or remove the plasma etching damage to substrate surface in deposition.Therefore, the use of chemical etching can damage the interface between substrate and the second lamination, and therefore damages solar cell properties.In addition, be difficult to carry out the composition to the second lamination in the situation that not damaging the first lamination, this is because conventionally can be with suitable etch-rate etching the first lamination for dry method or the wet etching process of etching the second lamination.
Summary of the invention
A kind of method that forms photovoltaic device comprises: on substrate, dielectric layer is carried out to composition, to be formed on the dielectric that there is local interval (local spacing) between shape and there is the composition at long-range interval (remote spacing) between shape group, and on the dielectric of described composition the epitaxial loayer of dopant deposition, make described epitaxial loayer with in part described substrate contact, there is optionally crystal growth (crystalline growth) and noncrystal (noncrystalline growth) occur in part contact with dielectric described composition described epitaxial loayer to grow.On the dielectric described local interval of described composition, form the first Metal Contact, and form the second Metal Contact on described long-range interval.Use the expose portion of described the first and second Metal Contact as noncrystal growth described in etching mask etching, contact lamination thereby form interdigital emitter alternately with the back of the body.
The another kind of method that forms photovoltaic device comprises: on substrate, dielectric layer is carried out to composition, to be formed on the dielectric that there is local interval between shape and there is the composition at long-range interval between shape group, the epitaxial loayer of dopant deposition on the dielectric of described composition, make described epitaxial loayer with in part described substrate contact, there is optionally crystal growth and in the part contacting with dielectric described composition described epitaxial loayer, noncrystal growth occur; The amorphous layer of dopant deposition on the epitaxial loayer of described doping; On described long-range interval, form the first Metal Contact; And according to the amorphous layer adulterating described in described the first Metal Contact etching; On the dielectric described local interval of described composition, form the second Metal Contact; Use the expose portion of described the first and second Metal Contact as noncrystal growth described in etching mask etching, contact lamination thereby form interdigital emitter alternately with the back of the body.
Photovoltaic device comprises a dielectric for composition, and the dielectric of described composition is formed on substrate and has the long-range interval between local interval and the shape group between shape.The epitaxial loayer of doping is formed on the dielectric of described composition, and the epitaxial loayer of described doping is included in the selectivity crystal growth in epitaxial loayer and the part described substrate contact of described doping and is included in the noncrystal growth in the part that epitaxial loayer and the dielectric described composition of described doping contacts.The first Metal Contact is formed on the dielectric described local interval of described composition, and the second Metal Contact is formed on described long-range interval, contacts lamination thereby form interdigital emitter alternately and carry on the back.
Another kind of photovoltaic device comprises the dielectric of composition, and the dielectric of described composition is formed on substrate and has the long-range interval between local interval and the shape group between shape.The epitaxial loayer of doping is formed on the dielectric of described composition, is included in the selectivity crystal growth in epitaxial loayer and the part described substrate contact of described doping and is included in the noncrystal growth in the part that epitaxial loayer and the dielectric described composition of described doping contacts.The amorphous layer of doping is formed on the epitaxial loayer of described doping.The first Metal Contact is formed on described long-range interval, and the second Metal Contact is formed on the dielectric described local interval of described composition, contacts lamination thereby form interdigital emitter alternately and carry on the back.
By the detailed description to its exemplary embodiment hereinafter, these and other feature and advantage will become apparent, and described detailed description will be read by reference to the accompanying drawings.
Brief description of the drawings
The disclosure gives particulars in to the following description of preferred embodiment with reference to the following drawings, in the accompanying drawings:
Figure 1A is the viewgraph of cross-section according to the principle of the invention with the substrate of positive passivation/ARC layer formation and composition and back side dielectric layer;
Figure 1B is the viewgraph of cross-section according to the principle of the invention with the structure of Figure 1A of the epitaxial loayer that is formed on the doping on the dielectric layer of the back side;
Fig. 1 C is the viewgraph of cross-section according to the principle of the invention with the structure of Figure 1B of the Metal Contact on the epitaxial loayer of the doping of being formed on;
Fig. 1 D is the viewgraph of cross-section according to the principle of the invention with the structure of Fig. 1 C of Metal Contact, and described Metal Contact is used as the etching mask of the noncrystal part of the epitaxial loayer that etches away described doping;
Fig. 2 A is the viewgraph of cross-section according to the principle of the invention with the structure of Figure 1B of the amorphous doped layer being formed on epitaxial loayer;
Fig. 2 B is the viewgraph of cross-section according to the principle of the invention with the structure of Fig. 2 A of the first Metal Contact on the long-range interval between the dielectric shape group that is formed on composition;
Fig. 2 C is the viewgraph of cross-section according to the principle of the invention with the structure of Fig. 2 B of the first Metal Contact, the described etching mask that acts on the expose portion of removing the amorphous layer adulterating for the first Metal Contact;
Fig. 2 D is the viewgraph of cross-section according to the principle of the invention with the structure of Fig. 2 C of the second Metal Contact on the epitaxial loayer of the doping of being formed on;
Fig. 2 E is the viewgraph of cross-section according to the principle of the invention with the structure of Fig. 2 D of the first and second Metal Contact, described the first and second Metal Contact etching mask of the noncrystal part that acts on the epitaxial loayer that etches away described doping;
Fig. 3 A is the viewgraph of cross-section according to the principle of the invention with the structure of Fig. 1 D of the transparent conductive material between the Metal Contact of being formed on and the epitaxial loayer of doping;
Fig. 3 B is the viewgraph of cross-section according to the principle of the invention with the structure of Fig. 2 E that is formed on the transparent conductive material between the first Metal Contact and the epitaxial loayer of doping and between the second Metal Contact and the amorphous layer of doping;
Fig. 4 shows three the exemplary shape graphical set that are used to form dielectric layer figure according to illustrative examples; And
Fig. 5 is block diagram/flow diagram, shows the method for the manufacture of photovoltaic device according to exemplary embodiment.
Embodiment
According to the principle of the invention, adopt single pattern step instead of multiple composition and alignment procedures for the interdigital back of the body contact of photovoltaic device.The method providing herein and device can adopt provides the low-temperature epitaxy of high-quality K cryogenic treatment layer.
Should be appreciated that putting up with the given representative configuration with substrate and photovoltaic lamination describes the present invention; But other structure, structure, substrate, material and technology characteristics and step can change within the scope of the invention.
It is also understood that when being called as such as the key element of layer, region or substrate when another key element " on " or " on ", it can be directly in this another key element, or also can have intermediate elements.On the contrary, in the time that a key element is called as " directly existing " another key element " on " or " on ", there is not intermediate elements.It is also understood that it can be connected directly or be coupled to this another key element, or can have intermediate elements in the time that a key element is called as " connection " or " coupling " to another key element.On the contrary, when being called as, a key element " while being directly connected " or " directly coupled " to another key element, there is not intermediate elements.
Can be the design of the integrated generation photovoltaic device of integrated circuit, or the design of photovoltaic device can combine with the parts on printed circuit board (PCB).Circuit/plate can be realized with graphic computer program language, and is stored in computer-readable storage medium (for example, virtual hard in disk, tape, entity hard disk drive or for example memory access network).If designer does not manufacture chip or the mask for the manufacture of chip, designer's available physical device (for example, by the copy (copy) of storage medium of design Storage is provided) transmits the design producing or for example, is sent to this entity in electronics mode (passing through network) directly or indirectly.Stored design is converted to suitable form (for example GDSII), for the manufacture of mask, mask typically comprises multiple copies of the paid close attention to chip design that will form on wafer again.Mask is for defining the region of to be etched or pending wafer (and/or layer) on it.
The method of describing in the application can be used for the integrated circuit (IC) chip of manufacturing photovoltaic device and/or having photovoltaic device.The devices/chips obtaining can be with the form of raw wafers (, as having multiple not single wafers of devices/chips of encapsulation), distributed by manufacturer as naked pipe core or with the form of encapsulation.In a rear situation, devices/chips is arranged on one single chip packaging body (for example plastic carrier, there is the lead-in wire being fixed on mainboard or more senior carrier) in or be for example arranged on, in multi-chip encapsulation body (, there is surperficial interconnection or buried interconnects or there is the ceramic monolith of surface interconnection and buried interconnects).In either case, then by integrated to devices/chips and other chips, discrete circuit element and/or other signal processors, for example, as (a) intermediate products, a part for mainboard or (b) final products.Described final products can be any products that comprises integrated circuit (IC) chip, scope comprises toy, energy harvester, solar device and other application, described other application comprise there is display, computer product or the device of keyboard or other input unit and central processing unit.Photovoltaic device described herein for be used for for electronic installation, family, building, vehicle etc. provide the solar cell of electric power or panel particularly useful.
It is also understood that material compound is usually described to by the unit with listed, for example GaInP, InGaAs or SiGe.These compounds are included in the element of different proportion in this compound, and for example InGaAs comprises In xga yas 1-x-y, wherein x, y are less than or equal to 1, or SiGe comprises Si xge 1-x, wherein x is less than or equal to 1, etc.In addition, according to the principle of the invention, other element can be contained in this compound, such as for example AlInGaAs, and still works.The compound in this application with other element will be called alloy.
Current embodiment can be a part for photovoltaic device or circuit, and circuit described herein can be the part for the design of integrated circuit (IC) chip, solar cell, light-sensitive device etc.Described photovoltaic device can be length and/or the width extensive device in the magnitude of foot or rice, or can be the small-scale device for calculator, solar powered lamp etc.It is also understood that the present invention can comprise tandem (tandem) (tying) structure more.
" embodiment " to the principle of the invention in specification or " embodiment " with and the quoting of other modification, mean that special characteristic, structure or characteristic of describing relatively with this embodiment etc. are comprised at least one embodiment of the principle of the invention.Therefore, may not all refer to same embodiment running through phrase " in one embodiment " that specification occurs throughout and the appearance of " in an embodiment " and any other modification.
Be to be understood that, hereinafter the use of for example, in "/", "and/or" and " ... at least one " (in the case of " A/B ", " A and/or B " and " at least one in A and B ") any one, is intended to comprise first option (A) that only selection is listed or only selects second option (B) of listing or select this two options (A and B).As another example, in the case of " A, B and/or C " and " at least one in A, B and C ", this phrase is intended to comprise: only select first option (A) of listing or only select second option (B) of listing or only select the 3rd option (C) of listing or first and second option (A and B) only selecting to list or only select listed first and the 3rd option (A and C) or only select listed second and the 3rd option (B and C) or select all three options (A and B and C).For this field and those of ordinary skill in the related art, it is clear easily that, this can expand the project of listing for many.
With reference now to accompanying drawing,, the same or analogous parts of similar in the drawings numeral, first with reference to figure 1A-1D, according to an exemplary embodiment, manufacture method is exemplarily shown interdigital back of the body contact (IBC) 120 that is used to form heterojunction photovoltaic device 100.Disclosed method can provide a kind of interdigital back contact solar cell structure, and this solar battery structure adopts single pattern step instead of two or more pattern step, and has especially eliminated typical alignment procedures in common process.
With reference to Figure 1A, on the front of substrate 102, form optional positive (FSF), passivation and/or antireflecting coating (ARC) layer 104.Substrate 102 preferably includes crystallization (for example, monocrystalline (monocrystalline) or polycrystalline (multicrystalline)) phase, and can comprise Si, Ge, SiGe, SiC, III-V material etc.Passivation/ARC layer 104 can comprise silica, silicon nitride, silicon oxynitride or any other suitable material.At the backside deposition of substrate 102 or the passivation dielectric layer 105 of growing thin, and this passivation dielectric layer 105 is carried out to composition to form the passivation dielectric 106 of composition.Dielectric 106 can include but not limited to silica, silicon nitride, aluminium oxide, hafnium oxide etc.In certain embodiments, dielectric layer 106 can comprise hydride material.In further embodiments, dielectric layer 106 can strengthen by plasma chemical vapour deposition (CVD) (PECVD), by ald (ALD) or grow by other method.
With reference to Figure 1B, in certain embodiments, the body (bulk) that dielectric layer 106 can be included in dielectric layer 106 is located or assemble at 110 places, interface between dielectric layer 106 and substrate 102 positive charge or negative electrical charge.Heavily doped n +or p +si(or SiGe) layer 108 is by epitaxial deposition on the dielectric 106 and substrate 102 on device 100 back sides.In useful especially embodiment, PECVD(or hot-wire chemical gas-phase deposition (HWCVD)) technique is used to selectivity and forms crystal Si(or SiGe on the expose portion top of substrate 102) form noncrystal Si(or SiGe on layer 109 and the surperficial top at dielectric 106) layer 111.
PECVD(or HWCVD) preferably form the low temperature process of epitaxial loayer 108, described epitaxial loayer 108 is grown on the expose portion of substrate 102 through the spatial selectivity in dielectric 106.Epitaxial loayer 122 can be in-situ doped or adulterate by other method.Epitaxial loayer 108 can comprise containing Si layer, containing Ge layer or its combination.Epitaxially grown layer 108 obtains amorphous material 111 on dielectric 106 tops, and (in the opening or space of dielectric 106) obtains crystalline material 109 on the top of substrate surface.
In useful especially embodiment, epitaxial loayer 108 is included in 5-40%(atomic percent) scope in hydrogen content, and can comprise germanium (Ge), carbon (C), fluorine (F), deuterium (D), nitrogen (N) and combination thereof.Noncrystal (non-crystalline) refer to amorphous (amorphous), receive crystalline substance (nanocrystalline) or crystallite (microcrystalline), and crystal refers to monocrystal (singlecrystalline) or polycrystalline.For providing the source of the gas of Si, epitaxial loayer 122 can comprise monosilane (SiH 4), also can use such as disilane (Si 2h 6), dichlorosilane (DCS), tetrafluorosilane (SiF 4) or other gas of its combination.For providing the source of the gas of Ge can comprise germane (GeH containing Ge layer 4).Can use diborane (B 2h 6) or trimethyl borine (TMB) source carry out the doping of original position p-type, and can use hydrogen phosphide (PH 3) source of the gas carries out the doping of original position N-shaped, but also can adopt other dopant source.
In one embodiment, use PEVCD in the monosilane environment of diluted in hydrogen, to carry out the selective epitaxial growth of silicon.At 150 degrees Celsius of lower hydrogen with the gas of monosilane gas than ([H 2]/[SiH 4]) be preferably 0 to approximately 1000.In useful especially embodiment, the epitaxial growth of silicon starts under the gas ratio of about 5-10.By diluted in hydrogen being increased to for example to 5 or larger, improve the quality of epitaxy Si.
Can use various sources of the gas, for example, silane (SiH 4), dichlorosilane (DCS), SiF 4, SiCl 4deng, carry out grows epitaxial silicon.Use these or other gas by increasing the dilution of hydrogen, improve the quality of epitaxial silicon.For higher diluted in hydrogen, produce more level and smooth interface (interface between epitaxial silicon and crystalline silicon) and observe less stacking fault and other defect.
Radio frequency (RF) or direct current (DC) plasma enhanced chemical vapor deposition (CVD) are preferably carrying out to the depositing temperature scope of approximately 400 degrees Celsius from about room temperature, and are preferably carrying out from the depositing temperature scope of approximately 150 degrees Celsius to approximately 250 degrees Celsius.Plasma power density can be at about 2mW/cm 2to about 2000mW/cm 2scope in.Deposition pressure scope can be that about 10mTorr is to about 5Torr.
Such as hydrogen (H 2), deuterium (D 2), the carrier gas of helium (He) or argon (Ar) can be for any layer in these layers or all layers.Carrier gas can be pre-mixed with source of the gas or be simultaneously mobile with source of the gas in when growth.Air-flow ratio is preferably [H 2]/[SiH 4] >5.For p ++growth (N-shaped substrate) can comprise Ge in layer 108.In this case, air-flow ratio is preferably [H 2]/([SiH 4]+[GeH 4]) >5.Can be lower than approximately 400 degrees Celsius for the growth temperature of epitaxial loayer 108, and more preferably between 150 to 250 degrees Celsius, but also can adopt higher or lower temperature.For making the low-temperature epitaxy growth PECVD that contacts passivation preferably include n ++layer 108 in-situ doped (wherein activate doping scope approximately 10 18to approximately 3 × 10 20cm -3between).Epitaxial loayer 108 can be included in about 2nm to the thickness between 5nm-25nm between about 100nm and preferably.
Crystalline material 109 as the first contact area (for example, emitter or back surface field (BSF) contact), and amorphous material 111 induce the electric charge (being substrate-dielectric interface at interface 110() of opposite types locate or interface 110 near) and be used as the second contact area (BSF or emitter) having with the conduction type of the conductivity type opposite of the first contact area.
With reference to figure 1C, form the Metal Contact or the electrode 112 and 114 that are respectively used to emitter and back of the body Surface Contact.Metal Contact 112,114 can be formed by single depositing operation.For example, can form Metal Contact 112,114 by silk screen printing, ink jet printing, lift-off processing or other former deposition composition (patterned-as-deposited) technique.Metal Contact 112,114 can comprise transparent conductive material or the opaque material (metal) such as Al, Ag, Au etc.Metal Contact is used for meaning metal or any other suitable electric conducting material, and described electric conducting material comprises semiconductive material, conduction organic material, the conductive non-metals (for example, carbon nano-tube) etc. of doping.
With reference to figure 1D, then for example for example, optionally remove by hydrogen plasma or wet chemistry material (HF of dilution or the HCl acid of dilution) the noncrystal Si(or the SiGe that are not sheltered by metal electrode) part 116 of layer.This separates Metal Contact 112 and 109 electricity of the crystal block section below Metal Contact 114 for emitter and BSF region.
For example can pass through original position dry etch technique, for example, use hydrogen plasma or other etching material, optionally remove amorphous layer 111.Under for example 900mTorr and 150 degrees Celsius, carry out hydrogen plasma etching, obtain c-Si(crystalline material 109) with respect to a-Si:H(amorphous material 111) the etching selectivity of approximate 1:3.Should be appreciated that and can use such as for example H 2, HCl, Cl 2, Ar etc. gas etch be grown in the p-nJie Erjiguan non-epitaxial p-n junction diode part (amorphous Si) on insulating material.Dry etching can comprise for example described hydrogen plasma etching; But the dystopy (ex-situ) of amorphous material 111 is removed the wet etching of the wet chemistry that can comprise HF that employing is for example diluted etc.Also can adopt other plasma gas and Wet-etching agent.
With reference to figure 2A, in another embodiment, the structure of describing from Figure 1B starts, on the top of low-temperature epitaxy layer 108 deposition have with the doped layer 122(of the conduction type identical conduction type of low-temperature epitaxy layer 108 for example, a-Si:H).Can use the low temperature deposition process of for example above-mentioned pecvd process or HWCVD technique to form doped layer 122.
With reference to figure 2B, for example, by silk screen printing or other (as-placed) in place depositing operation, form first group of Metal Contact 124.Then adopt Metal Contact 124 optionally to remove the part of doped layer 122 as mask.Metal Contact 124 can comprise transparent conductive material or the opaque material (metal) such as Al, Ag, Au etc.
With reference to figure 2C, carry out selective etch to remove the expose portion of doped layer 122.Described etch process can comprise plasma etching (for example, hydrogen plasma) or dilute acid etching (for example HF or HCl).In another embodiment, can remove or partly remove from dielectric 106 tops the expose portion of the amorphous material 111 of layer 108.Can use Metal Contact 124 as etching mask, during the removal of the expose portion of above-mentioned doped layer 122, remove this other part simultaneously.The result of this part of etching does not illustrate in the drawings.
With reference to figure 2D, then, for example by silk screen printing as above etc., form second group of Metal Contact 126.Metal Contact 126 can comprise transparent conductive material, opaque material (metal) or its combination such as Al, Ag, Au etc.
With reference to figure 2E, the mask of the selective removal of the amorphous material 111 of the doped layer 108 that Metal Contact 126 also can be pushed up the dielectric 106 in region 128 with work.This etching can comprise that for example hydrogen plasma etching as above or wet chemical etch (for example, the hydrofluoric acid of dilution) are so that emitter and the electricity separation of BSF region.
With reference to figure 3A and 3B, in certain embodiments, can use the transparent conductive material 130 and 136 of Metal Contact 132 and 134 depositions and composition such as transparent conductive oxide (TCO). Material 130 and 136 is arranged on amorphous layer 122(Fig. 3 B of Metal Contact 132,134 and doping) or epitaxial loayer 108(Fig. 3 A and Fig. 3 B) between.Electric conducting material 130 can be for improving light from carrying on the back surperficial reflection and/or preventing from contacting 132,134 metal and the amorphous layer 122 of doping or reacting of epitaxial loayer 108 with 136.
For example can deposit 130 and 136 layers of (one or more) electric conducting materials by sputter or CVD.Can use (forming after the formation of described (one or more) conductive material layer 130 and 136) Metal Contact 132,134, as etching mask, electric conducting material 130 and 136 is carried out to composition.The structure of drawing in Fig. 3 A shows the embodiment that is provided with Fig. 1 D of electric conducting material 130 and 136 in interdigital lamination 140.The structure of drawing in Fig. 3 B shows the embodiment that is provided with Fig. 2 E of electric conducting material 130 and 136 in interdigital lamination 142.Note, the embodiment corresponding with Fig. 3 B adopts electric conducting material deposition and etched two steps.In certain embodiments, can be by TCO only for one group of Metal Contact (not shown).
With reference to figure 4, run through in figure, being illustrated as patterned dielectric 106 and representing single photoetching process.The photoetching process adopting can produce with one or more masks different shapes or figure or shape group or graphical set on substrate 102.Can in dielectric 106, form the opening with arbitrary shape, as schematic representation, described shape is for example circle 150, square 152, linear 154 etc.The area fraction of opening can be approximately 0.1 in the about scope between 5%, but also can adopt higher or lower mark.The shape of describing in the drawings can represent this contoured group.The described shape local interval (for example,, between shape 150) that can be spaced apart from each other itself.Can on the surface of device, repeat this contoured group.Interval between these shapes (it can be the shape identical with described shape or be different from described shape) group can be called long-range interval.
With reference to figure 5, show to be used to form according to the principle of the invention and there is interdigital emitter/method of the photovoltaic device of back of the body contact.Flow chart/block diagram example in Fig. 5 has gone out according to the framework of the possible implementation of the method for various embodiments of the invention and device, function and operation.It should be noted that in some alternate embodiment, the function marking in frame may be not according to occurring in sequence shown in figure.For example, in fact two frames that illustrate continuously can be performed substantially simultaneously, or these frames can be performed sometimes in reverse order, and this depends on related function.Shall also be noted that each frame in block diagram and/or flow example, and the combination of block diagram and/or flow example center, can be by carrying out the special hardware based system of specific function or action or being realized by the combination of specialized hardware and computer instruction.
In frame 202, can on the front of substrate, form one or more in passivation layer and antireflecting coating (ARC).In frame 204, on substrate (with passivation/ARC layer on the contrary) dielectric layer is carried out to composition, to be formed on the dielectric that there is local interval between shape and there is the composition at long-range interval between shape group.Described shape and/or shape group can comprise circle, at least one in square, linear etc.The composition of described dielectric layer is comprised to only photoetching treatment that is used to form the interdigital emitter that replaces in accordance with the principles of the present invention and contacts with the back of the body lamination.In frame 205, the interface between dielectric and the substrate of composition or this near interface generation accumulation.
In frame 206, the epitaxial loayer of dopant deposition on the dielectric of described composition, make described epitaxial loayer with in part described substrate contact, there is optionally crystal growth and in the part contacting with dielectric described composition described epitaxial loayer, noncrystal growth occur.The epitaxial loayer of doping can form by using plasma or hot-wire chemical gas-phase deposition technique, for containing Si or containing Ge layer, described plasma or hot-wire chemical gas-phase deposition technique have the temperature lower than 400 degrees Celsius, and the temperature between 150 to 250 degrees Celsius especially, wherein, for silicon growth, gas is than being [H 2]/[SiH 4] >5, or for SiGe growth, gas flow ratio [H 2]/([SiH 4]+[GeH 4]) >5.
In frame 208, in one embodiment, can on the epitaxial loayer of doping, form the amorphous layer of doping.Described amorphous layer can comprise amorphous, crystallite or nano-crystal material.
In frame 210, can below Metal Contact, form transparent conductive material.Can carry out transparent conductive material described in etching according to described Metal Contact.
In frame 212, on the dielectric local interval of the composition in epitaxial loayer or amorphous layer, form Metal Contact.In frame 214, on the long-range interval in epitaxial loayer or amorphous layer, form Metal Contact.In one embodiment, the Metal Contact being formed on epitaxial loayer can preferably all form in same technique.This technique comprises former deposition pattern (as-deposited pattern) deposition, such as typography, stripping technology etc.In another embodiment, in the time that one group of Metal Contact is formed in the amorphous layer of doping, the Metal Contact first forming is used as etching mask on long-range interval according to the amorphous layer of adulterating described in described Metal Contact etching.Then, in the technique of separating, on the dielectric area of composition, form next group Metal Contact.
In frame 216, use the expose portion of described Metal Contact as etching mask etching method for amorphous bulk-growth.This has formed the interdigital emitter replacing and has contacted lamination with the back of the body.In frame 218, can foundation need to continue to process.
The preferred embodiment (these preferred embodiments be intended to example and and unrestricted) of having described the interdigital back of the body contact of field effect photovoltaic device, it should be noted that those skilled in the art can modify and change according to above-mentioned instruction.Therefore, should be appreciated that and can in the scope of the present invention being limited by appended claims, in disclosed specific embodiment, make change.Describe thus the desired aspect of the present invention with details and particularity of Patent Law, set forth in the appended claims the required for protection and desirable aspect of the present invention that is subject to patent certificate protection.

Claims (37)

1. a method that forms photovoltaic device, comprising:
On substrate, dielectric layer is carried out to composition, to be formed on the dielectric that there is local interval between shape and there is the composition at long-range interval between shape group;
The epitaxial loayer of dopant deposition on the dielectric of described composition, make described epitaxial loayer with in part described substrate contact, there is optionally crystal growth and in the part contacting with dielectric described composition described epitaxial loayer, noncrystal growth occur;
On the dielectric described local interval of described composition, form the first Metal Contact;
On described long-range interval, form the second Metal Contact; And
Use the expose portion of described the first and second Metal Contact as noncrystal growth described in etching mask etching, contact lamination thereby form interdigital emitter alternately with the back of the body.
The method of claim 1, wherein composition comprise form comprise circle, square and linear at least one shape and shape group.
3. the method for claim 1, wherein described the first Metal Contact and described the second Metal Contact form in same technique.
4. method as claimed in claim 3, wherein, described technique is included in described the first Metal Contact and described the second Metal Contact is provided in former deposition pattern.
5. the method for claim 1, also comprises: the interface between dielectric and the described substrate of described composition or this near interface are assembled electric charge.
6. the method for claim 1, wherein the epitaxial loayer of dopant deposition comprises by adopting chemical vapor deposition method that temperature strengthens lower than the plasma of 400 degrees Celsius or hot-wire chemical gas-phase deposition technique to deposit the epitaxial loayer of described doping.
7. the method for claim 1, wherein the epitaxial loayer of dopant deposition is included in the epitaxial loayer that deposits described doping at the temperature between 150 to 250 degrees Celsius, and wherein for silicon growth, gas is than being [H 2]/[SiH 4] >5, or for SiGe growth, gas flow ratio is [H 2]/([SiH 4]+[GeH 4]) >5.
8. the method for claim 1, also comprises: before forming described the first and second Metal Contact, form transparent conductive material; And according to transparent conductive material described in described the first and second Metal Contact etchings.
9. the method for claim 1, wherein dielectric layer is carried out to composition and comprise that the interdigital emitter replacing described in being used to form contacts an only photolithographic processing steps of lamination with the back of the body.
10. the method for claim 1, also comprises: on the front surface that lamination is contrary, form one or more in passivation layer and antireflecting coating contacting with the back of the body with the described interdigital emitter replacing of described substrate.
11. 1 kinds form the method for photovoltaic device, comprising:
On substrate, dielectric layer is carried out to composition, to be formed on the dielectric that there is local interval between shape and there is the composition at long-range interval between shape group;
The epitaxial loayer of dopant deposition on the dielectric of described composition, make described epitaxial loayer with in part described substrate contact, there is optionally crystal growth and in the part contacting with dielectric described composition described epitaxial loayer, noncrystal growth occur;
The amorphous layer of dopant deposition on the epitaxial loayer of described doping;
On described long-range interval, form the first Metal Contact;
According to the amorphous layer adulterating described in described the first Metal Contact etching;
On the dielectric described local interval of described composition, form the second Metal Contact;
Use the expose portion of described the first and second Metal Contact as noncrystal growth described in etching mask etching, contact lamination thereby form interdigital emitter alternately with the back of the body.
12. methods as claimed in claim 11, wherein, composition comprise form comprise circle, square and linear at least one shape and shape group.
13. methods as claimed in claim 11, wherein, described the first Metal Contact and described the second Metal Contact form in former deposition pattern.
14. methods as claimed in claim 11, also comprise: the interface between dielectric and the described substrate of described composition or this near interface are assembled electric charge.
15. methods as claimed in claim 11, wherein, the epitaxial loayer of dopant deposition comprises by adopting chemical vapor deposition method that temperature strengthens lower than the plasma of 400 degrees Celsius or hot-wire chemical gas-phase deposition technique to deposit the epitaxial loayer of described doping.
16. methods as claimed in claim 11, wherein, the epitaxial loayer of dopant deposition is included in the epitaxial loayer that deposits described doping at the temperature between 150 to 250 degrees Celsius, and wherein for silicon growth, gas is than being [H 2]/[SiH 4] >5, or for SiGe growth, gas flow ratio is [H 2]/([SiH 4]+[GeH 4]) >5.
17. methods as claimed in claim 11, wherein, the amorphous layer of dopant deposition comprises by adopting chemical vapor deposition method that temperature strengthens lower than the plasma of 400 degrees Celsius or hot-wire chemical gas-phase deposition technique to deposit the amorphous layer of described doping.
18. methods as claimed in claim 11, also comprise: before each in described the first and second Metal Contact of formation, form transparent conductive material; And according to transparent conductive material described in each etching in described the first and second Metal Contact, to form and each electrically conducting transparent part contacting in described the first and second Metal Contact.
19. methods as claimed in claim 11, wherein, carry out composition to dielectric layer and comprise that the interdigital emitter replacing described in being used to form contacts an only photolithographic processing steps of lamination with the back of the body.
20. methods as claimed in claim 11, also comprise: on the front surface that lamination is contrary, form one or more in passivation layer and antireflecting coating contacting with the back of the body with the described interdigital emitter replacing of described substrate.
21. 1 kinds of photovoltaic devices, comprising:
The dielectric of composition, it is formed on substrate and has the long-range interval between local interval and the shape group between shape;
The epitaxial loayer of doping, it is formed on the dielectric of described composition, is included in the selectivity crystal growth in epitaxial loayer and the part described substrate contact of described doping and is included in the noncrystal growth in the part that epitaxial loayer and the dielectric described composition of described doping contacts;
The first Metal Contact, it is formed on the dielectric described local interval of described composition; And
The second Metal Contact, it is formed on described long-range interval, contacts lamination thereby form interdigital emitter alternately with the back of the body.
22. devices as claimed in claim 21, wherein, the dielectric of described composition comprises shape and shape group, described shape and shape group comprise circle, square and linear at least one.
23. devices as claimed in claim 21, wherein, described the first Metal Contact and described the second Metal Contact comprise former deposition pattern.
24. devices as claimed in claim 21, also comprise: accumulation district, it is formed on interface or this near interface between dielectric and the described substrate of described composition.
25. devices as claimed in claim 21, wherein, the epitaxial loayer of described doping comprises at least one in Si and Ge.
26. devices as claimed in claim 21, wherein, the epitaxial loayer of described doping is included in the form of growing at the temperature between 150 to 250 degrees Celsius, and wherein for silicon growth, gas is than being [H 2]/[SiH 4] >5, or for SiGe growth, gas flow ratio is [H 2]/([SiH 4]+[GeH 4]) >5.
27. devices as claimed in claim 21, also comprise: transparent conductive material, it is formed between described the first Metal Contact and the epitaxial loayer of described doping and is formed between described the second Metal Contact and the epitaxial loayer of described doping.
28. devices as claimed in claim 21, also comprise: one or more in passivation layer and antireflecting coating, it is formed on contacting on the front surface that lamination is contrary with the back of the body with the described interdigital emitter replacing of described substrate.
29. 1 kinds of photovoltaic devices, comprising:
The dielectric of composition, it is formed on substrate and has the long-range interval between local interval and the shape group between shape;
The epitaxial loayer of doping, it is formed on the dielectric of described composition, is included in the selectivity crystal growth in epitaxial loayer and the part described substrate contact of described doping and is included in the noncrystal growth in the part that epitaxial loayer and the dielectric described composition of described doping contacts;
The amorphous layer of doping, it is formed on the epitaxial loayer of described doping;
The first Metal Contact, it is formed on described long-range interval; And
The second Metal Contact, it is formed on the dielectric described local interval of described composition, contacts lamination thereby form interdigital emitter alternately with the back of the body.
30. devices as claimed in claim 29, wherein, the dielectric of described composition comprises shape and shape group, described shape and shape group comprise circle, square and linear at least one.
31. devices as claimed in claim 29, wherein, described the first Metal Contact and described the second Metal Contact comprise former deposition pattern.
32. devices as claimed in claim 29, also comprise: accumulation district, it is formed on interface or this near interface between dielectric and the described substrate of described composition.
33. devices as claimed in claim 29, wherein, the epitaxial loayer of described doping comprises at least one in Si and Ge.
34. devices as claimed in claim 29, wherein, the epitaxial loayer of described doping is included in the form of growing at the temperature between 150 to 250 degrees Celsius, and wherein for silicon growth, gas is than being [H 2]/[SiH 4] >5, or for SiGe growth, gas flow ratio is [H 2]/([SiH 4]+[GeH 4]) >5.
35. devices as claimed in claim 29, also comprise: transparent conductive material, it is formed between described the first Metal Contact and the amorphous layer of described doping and is formed between described the second Metal Contact and the amorphous layer of described doping.
36. devices as claimed in claim 29, also comprise: one or more in passivation layer and antireflecting coating, it is formed on contacting on the front surface that lamination is contrary with the back of the body with the described interdigital emitter replacing of described substrate.
37. devices as claimed in claim 29, wherein, the amorphous layer of described doping comprises amorphous, crystallite or receives brilliant Si.
CN201310629464.4A 2012-12-18 2013-11-29 Interdigital back contacts photovoltaic device of field effect and forming method thereof Expired - Fee Related CN103872185B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/718,748 US8642378B1 (en) 2012-12-18 2012-12-18 Field-effect inter-digitated back contact photovoltaic device
US13/718,748 2012-12-18
US13/749,222 2013-01-24
US13/749,222 US8829339B2 (en) 2012-12-18 2013-01-24 Field-effect inter-digitated back contact photovoltaic device

Publications (2)

Publication Number Publication Date
CN103872185A true CN103872185A (en) 2014-06-18
CN103872185B CN103872185B (en) 2016-06-29

Family

ID=50910525

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310629464.4A Expired - Fee Related CN103872185B (en) 2012-12-18 2013-11-29 Interdigital back contacts photovoltaic device of field effect and forming method thereof

Country Status (1)

Country Link
CN (1) CN103872185B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105405921A (en) * 2014-09-04 2016-03-16 Imec非营利协会 Method for fabricating crystalline photovoltaic cells
CN110896119A (en) * 2018-09-13 2020-03-20 Imec 非营利协会 Selective deposition of interdigitated patterns for use in solar cells

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101438420A (en) * 2006-05-04 2009-05-20 太阳能公司 Solar cell having doped semiconductor heterojunction contacts
US20110041908A1 (en) * 2007-12-11 2011-02-24 Institut Für Solarenergieforschung Gmbh Rear-contact solar cell having elongate, inter-digitated emitter and base regions on the rear side and method for producing the same
TW201203594A (en) * 2010-06-14 2012-01-16 Imec Fabrication method for interdigitated back contact photovoltaic cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101438420A (en) * 2006-05-04 2009-05-20 太阳能公司 Solar cell having doped semiconductor heterojunction contacts
US20110041908A1 (en) * 2007-12-11 2011-02-24 Institut Für Solarenergieforschung Gmbh Rear-contact solar cell having elongate, inter-digitated emitter and base regions on the rear side and method for producing the same
TW201203594A (en) * 2010-06-14 2012-01-16 Imec Fabrication method for interdigitated back contact photovoltaic cells

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105405921A (en) * 2014-09-04 2016-03-16 Imec非营利协会 Method for fabricating crystalline photovoltaic cells
CN110896119A (en) * 2018-09-13 2020-03-20 Imec 非营利协会 Selective deposition of interdigitated patterns for use in solar cells
CN110896119B (en) * 2018-09-13 2024-05-03 Imec非营利协会 Selective deposition of interdigitated patterns for use in solar cells

Also Published As

Publication number Publication date
CN103872185B (en) 2016-06-29

Similar Documents

Publication Publication Date Title
US8642378B1 (en) Field-effect inter-digitated back contact photovoltaic device
US10256357B2 (en) Monolithic integration of heterojunction solar cells
JP5383792B2 (en) Solar cell
US10388815B2 (en) Embedded junction in hetero-structured back-surface field for photovoltaic devices
US20140242746A1 (en) Electrode formation for heterojunction solar cells
CN102473789A (en) Silicon wafer based structure for heterostructure solar cells
CN105981180B (en) Photo-electric conversion element and the solar module for possessing the photo-electric conversion element
JP2008263171A (en) Photovoltaic device
CN107799612A (en) Solar battery structure and its manufacture method
CN108028290B (en) Photo-electric conversion element
CN103872185B (en) Interdigital back contacts photovoltaic device of field effect and forming method thereof
US9263616B2 (en) Selective emitter photovoltaic device
CN103681905B (en) Photovoltaic device and forming method thereof
CN103872176B (en) Device and its manufacture method with integrated photovoltaic cells
KR101772432B1 (en) SOLAR CELL USING MULTIBAND Si-Ge THIN FILM SILICON CRYSTAL AND EFFICIENCY IMPROVEMENT METHOD THEREOF
JP2001044468A (en) Thin film semiconductor device and fabrication thereof
JP2001168364A (en) Method of manufacturing amorphous silicon thin film photoelectric transfer device
JP6198813B2 (en) Photoelectric conversion element, photoelectric conversion module, and photovoltaic power generation system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171027

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171027

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160629

Termination date: 20191129

CF01 Termination of patent right due to non-payment of annual fee