CN103870209B - Working mode switching method, Memory Controller and memorizer memory devices - Google Patents
Working mode switching method, Memory Controller and memorizer memory devices Download PDFInfo
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- CN103870209B CN103870209B CN201210550006.7A CN201210550006A CN103870209B CN 103870209 B CN103870209 B CN 103870209B CN 201210550006 A CN201210550006 A CN 201210550006A CN 103870209 B CN103870209 B CN 103870209B
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Abstract
The present invention provides a kind of Working mode switching method, Memory Controller and memorizer memory devices.This Working mode switching method includes receiving at least one access instruction from host computer system and judging whether access instruction meets pre-defined form.If at least one access instruction meets pre-defined form, the mode of operation of memorizer memory devices is switched to the second pattern from first mode.Aforementioned access instruction includes that the first write instruction and the first write instruction include writing word string, and write word string instruction memorizer memory devices performs the operation of correspondence write word string.Base this, this method by judging that the form of access instruction switches the mode of operation of memorizer memory devices, by simplify mode of operation switching in the way of and reduce mistake switching working mode probability.
Description
Technical field
The invention relates to a kind of Working mode switching method for memorizer memory devices, storage
Device controller and memorizer memory devices.
Background technology
Digital camera, mobile phone and MP3 are the rapidest in growth over the years so that consumer pair
The demand storing media increases the most rapidly.Light portative storage card also becomes these electronic products
One of most-often used storage media.The various function being had relative to this series products, each manufacturer
Also the storage card of its product specification corresponding is released, including compact flash (Compact Flash, CF)
Storage card, safe magnetic disc (Security Disk, SD) storage card, and storage bar (Memory
Stick) storage card of the various types such as storage card.It is said that in general, except using inside storage card
Outside the data that person is stored in, also comprise the specific information being relevant to storage card, be only capable of by special finger
Order also accesses under the special pattern of storage card.
In the mode of access storage card, most-often used is i.e. the Card Reader by having access facility
Machine, makes host computer system can write or obtain the data in storage card.Along with the progress of science and technology, can be right
Answer the all-in-one card reader of different size storage card also in here being born.But commercially available card reader is most
It is only capable of performing simple access action, and host computer system cannot perform special instruction by card reader,
The specific information in storage card the most just cannot be obtained by card reader.Therefore, how to utilize typically
Access instruction switch the mode of operation of storage card to obtain the specific information within storage card, and
And prevent simultaneously storage card because of false judgment switching working mode, become this skilled person institute
The subject under discussion paid close attention to.
Summary of the invention
The present invention proposes a kind of Working mode switching method, Memory Controller and memory storage
Device, it is by judging that the form of access instruction switches the mode of operation of memorizer memory devices,
To simplify in the way of mode of operation switches and to reduce the probability of mistake switching working mode.
One example of the present invention embodiment provides a kind of mode of operation for memorizer memory devices
Changing method.The mode of operation of memorizer memory devices includes first mode and the second pattern.This work
Operation mode changing method includes receiving at least one access instruction from host computer system, and judges access
Whether instruction meets pre-defined form.If at least one access instruction meets pre-defined form
Time, the mode of operation of memorizer memory devices is switched to the second pattern from first mode.Access refers to
Order includes that the first write instruction and the first write instruction include writing word string, write word string instruction storage
Device storage device performs the operation that should write word string.
In one example of the present invention embodiment, memorizer memory devices is storage card, and from main frame
The step receiving access instruction in system includes that receiving access from host computer system by card reader refers to
Order.
In one example of the present invention embodiment, access instruction includes that multiple first reads instruction, and
Judge whether access instruction meets the step of pre-defined form and include: judge that the first reading instruction is
No meet pre-defined reading format；If first reads instruction meets pre-defined reading format
Time, it is judged that whether the write word string indicated by the first write instruction meets multiple pre-defined instruction lattice
One of them of formula；And if the write word string indicated by the first write instruction meets pre-defined
During one of them of instruction format, identify that at least one access instruction meets pre-defined form.
In one example of the present invention embodiment, memorizer memory devices includes that duplicative is non-volatile
Property memory module, and multiple logical address be configured to map type nonvolatile
Multiple physical page of module, wherein judge whether the first reading instruction meets pre-defined reading lattice
The step of formula includes: judges whether the first reading instruction indicates and reads among multiple logical addresses continuously
The first logical address；And if first read instruction instruction read continuously multiple logical addresses it
In the first logical address time, identify first reading instruction meet pre-defined reading format.
In one example of the present invention embodiment, memorizer memory devices includes that duplicative is non-volatile
Property memory module, and multiple logical address be configured to map type nonvolatile
Multiple physical page of module, wherein judge whether the first reading instruction meets pre-defined reading lattice
The step of formula includes: judges whether the first reading instruction indicates and reads multiple according to pre-defined order
At least part of logical address among logical address；And if the first reading instruction instruction is according to pre-
When first definition of order reads at least part of logical address among multiple logical addresses, identify the first reading
Instruction fetch meets pre-defined reading format.
In one example of the present invention embodiment, if Working mode switching method also includes that first writes
Enter the write word string indicated by instruction when not meeting pre-defined instruction format, root in the flrst mode
According to the logical address indicated by the first write instruction, write word string is write to the correspondent entity page.
In one example of the present invention embodiment, Working mode switching method also includes: at the second mould
During formula, from host computer system, receive the second reading instruction；Judge indicated by the second reading instruction
Whether logical address is pre-defined logical address；And if patrolling indicated by the second reading instruction
When collecting address for pre-defined logical address, send at least one system information to host computer system.
In one example of the present invention embodiment, Working mode switching method is additionally included at least one
After individual system information sends host computer system to, by the mode of operation of memorizer memory devices from second
Pattern switches to first mode.
In one example of the present invention embodiment, Working mode switching method includes according to the first write
Write word string indicated by instruction, obtains at least one system information from memorizer memory devices,
And at least one system information is deposited to the buffer storage of memorizer memory devices.
In one example of the present invention embodiment, Working mode switching method also includes: at the second mould
During formula, receive the second write instruction；Whether judge the write word string indicated by the second write instruction
Meet the instruction format for closing the second pattern；And if writing indicated by the second write instruction
Enter word string and meet in pre-defined instruction format when the instruction format closing the second pattern, will deposit
The mode of operation of reservoir storage device switches to first mode from the second pattern.
Another example of the present invention embodiment provides a kind of Memory Controller, in order to control memorizer
Storage device.The mode of operation of memorizer memory devices includes first mode and the second pattern, and deposits
Memory controller includes connecting interface, memory interface and memory management circuitry.Memorizer connects
Mouth is in order to be coupled to reproducible nonvolatile memorizer module, and memory management circuitry is coupled to
Connect interface and memory interface and in order to receive at least one access instruction from host computer system.
Memory management circuitry judges whether access instruction meets pre-defined form.If at least one access
When instruction meets pre-defined form, memory management circuitry is by the Working mould of memorizer memory devices
Formula switches to the second pattern from first mode.Access instruction includes the first write instruction and the first write
Instruction includes writing word string, and memory management circuitry performs this write word corresponding according to write word string
The operation of string.
The another exemplary embodiment of the present invention provides a kind of memorizer memory devices, including adapter,
Reproducible nonvolatile memorizer module, buffer storage and Memory Controller.Memorizer
Controller is coupled to reproducible nonvolatile memorizer module, adapter and buffer storage, and
And in order to receive at least one access instruction from host computer system.Memory Controller judges that access refers to
Whether order meets pre-defined form, if a few access instruction meets pre-defined form,
The mode of operation of memorizer memory devices is switched to the second mould from first mode by Memory Controller
Formula.Access instruction includes that the first write instruction and the first write instruction include writing word string, and storage
Device controller performs the operation of this write word string corresponding according to write word string.
Based on above-mentioned, the Working mode switching method of exemplary embodiment of the present invention, Memory Controller
And memorizer memory devices is by judging whether access instruction meets pre-defined form and determine
Whether switch the mode of operation of memorizer memory devices, to simplify in the way of mode of operation switches and to drop
The probability of low mistake switching working mode.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and
Institute's accompanying drawings is coordinated to be described in detail below.
Accompanying drawing explanation
Figure 1A is according to the host computer system shown by an exemplary embodiment and memorizer memory devices
Schematic block diagram；
Figure 1B is according to the computer shown by the present invention the first exemplary embodiment, input/output device
Schematic diagram with memorizer memory devices；
Fig. 1 C is to store up with memorizer according to the host computer system shown by another exemplary embodiment of the present invention
The schematic diagram of cryopreservation device；
Fig. 2 Yu Fig. 3 is the schematic diagram according to the management entity block shown by an exemplary embodiment；
Fig. 4 is the schematic block diagram according to the Memory Controller shown by an exemplary embodiment；
Fig. 5 is the schematic diagram according to the Working mode switching method shown by an exemplary embodiment；
Fig. 6 is the flow chart according to the mode switching method shown by exemplary embodiment of the present invention.
Description of reference numerals:
100: memorizer memory devices；
102: adapter；
104: Memory Controller；
106: reproducible nonvolatile memorizer module；
108: buffer storage；
1000: host computer system；
1102: microprocessor；
1104: storage device；
1106: random access memory；
1108: input/output device；
1110: operating system；
1120: mode of operation switching application program；
1140: card reader；
1100: computer；
1202: slide-mouse；
1204: keyboard；
1206: display；
1208: printer；
1212: Portable disk；
1214: storage card；
1310: digital camera；
1312:SD card；
1314:MMC card；
1316: memory stick；
1318:CF card；
1320: embedded storage device；
304 (0)-304 (R): physical blocks；
402: data field；
404: spare area；
406: replace district；
408: hidden area；
LBA (0)-LBA (H): logical address；
202: memory management circuitry；
204: connect interface；
206: memory interface；
208: electric power management circuit；
210: error checking and correcting circuit；
The step of S610-S670: Working mode switching method.
Detailed description of the invention
It is said that in general, memorizer memory devices (also referred to as, memory storage system) includes duplicative
Non-volatile memory module and controller (also referred to as, control circuit).It is commonly stored device storage device
It is to be used together with host computer system, so that host computer system can write data into memorizer memory devices
Or from memorizer memory devices, read data.
Figure 1A is according to the host computer system shown by an exemplary embodiment and memorizer memory devices
Schematic block diagram.
Refer to Figure 1A, host computer system 1000 include microprocessor 1102, storage device 1104,
Random access memory 1106 and input/output device 1108.When host computer system 1000 is started shooting,
Microprocessor 1102 can perform the operating system 1110 being installed in storage device 1104, so that main
Machine system 1000 provides corresponding function according to the operation of user.Such as, real at this example
Shi Zhong, host computer system 1000 is computer system and operating system 1110 is Windows,
And after host computer system 1000 is started shooting, user can be operated by input/output device 1108
Host computer system 1000 is to perform the functions such as archive files editor, video/audio archive editor, audio-visual broadcasting.
Memorizer memory devices 100 is coupled to host computer system 1000, and according to coming from main frame
The instruction of the operating system 1110 of system 1000 performs write and the reading of data.Such as, Figure 1B
It is according to computer, input/output device and the memorizer shown by the present invention the first exemplary embodiment
The schematic diagram of storage device, and memorizer memory devices 100 can be as shown in Figure 1B carry-on
The type nonvolatile storage device of dish 1212, storage card 1214 etc..
Although in this exemplary embodiment, host computer system 1000 is to explain with computer system,
But, in another exemplary embodiment of the present invention, host computer system 1000 can be digital camera, take the photograph
The systems such as shadow machine, communicator, reproducing apparatus for phonotape or video signal player.Such as, in host computer system
During for digital camera (camera) 1310, type nonvolatile storage device is then
Its secure digital used (Secure Digital, SD) blocks 1312, Multi Media Card (Multi
Media Card, MMC) block 1314, memory stick (memory stick) 1316, compact flash
(as shown in Figure 1 C, (Compact Flash, CF) block 1318 or embedded storage devices 1320
Fig. 1 C is to fill with memory storage according to the host computer system shown by another exemplary embodiment of the present invention
The schematic diagram put.).Embedded storage device 1320 includes embedded multi-media card (Embedded
MMC, eMMC).It is noted that embedded multi-media card is to be coupled directly to host computer system
Substrate on.
In this exemplary embodiment, memorizer memory devices 100 is storage card, and passes through Card Reader
Machine 1140 couples with host computer system 1000 phase, and host computer system 1000 can pass through card reader 1140
Access memorizer memory devices 100.Memorizer memory devices 100 includes adapter 102, storage
Device controller 104, reproducible nonvolatile memorizer module 106 and buffer storage 108.
Adapter 102 is the adapter being compatible to SD standard.However, it is necessary to be appreciated that, this
Invention be not limited to this, adapter 102 can also be compatible MS standard, MMC standard, CF standard,
Universal serial bus (Universal Serial Bus, USB) standard or the adapter of other standards.
Memory Controller 104 is coupled to adapter 102, type nonvolatile mould
Block 106 and buffer storage 108 are many in order to perform with hardware pattern or firmware pattern implementation
Individual logic gate, control instruction or access instruction, and according to the control instruction of host computer system 1000
Or access instruction carries out the write of data, reading in reproducible nonvolatile memorizer module 106
The work such as take and erase.Particularly, Memory Controller 104 is able to carry out implementing according to this example
The Working mode switching method of example is answered to respond the mode of operation switching running on host computer system 1000
The mode of operation switching startup information transmitted by program 1120, i.e. meets pre-defined form
Access instruction, switches the mode of operation of memorizer memory devices 100.To coordinate after a while graphic in detail
The thin Working mode switching method describing memorizer memory devices and its flow process.
Reproducible nonvolatile memorizer module 106 is coupled to Memory Controller 104, and
And in order to store the data that host computer system 1000 is write.In this exemplary embodiment, can make carbon copies
Formula non-volatile memory module 106 is multistage memory cell (Multi Level Cell, MLC) NAND
Type flash memory module.But, the invention is not restricted to this, type nonvolatile
Module 106 may also be single-order memory cell (Single Level Cell, SLC) NAND flash
Device module, Complex Order memory cell (Trinary Level Cell, TLC) NAND flash
Device module, other flash memory module or other there is the memory module of identical characteristics.
Buffer storage 108 is coupled to Memory Controller 140 and is configured to temporarily store and comes from master
The data of machine system 1000 and instruction or come from reproducible nonvolatile memorizer module 106
Data.In this exemplary embodiment, buffer storage 108 may further be used to temporarily store memorizer
The system information of storage device 100, detail will describe in detail in after a while.
Fig. 2 Yu Fig. 3 is the schematic diagram according to the management entity block shown by an exemplary embodiment.
Refer to Fig. 2, reproducible nonvolatile memorizer module 106 includes multiple physical blocks
304(0)-304(R).Each physical blocks 304 (0)-304 (R) is respectively provided with a plurality of physical page,
Wherein belong to the physical page of same physical blocks 304 (0)-304 (R) can be written independently and
Simultaneously erased.Specifically, physical blocks 304 (0)-304 (R) is the least unit erased.
That is, the storage being erased in the lump containing minimal amount of each physical blocks 304 (0)-304 (R)
Born of the same parents.Physical page is the minimum unit of sequencing.That is, physical page is the minimum single of write data
Unit.However, it is necessary to be appreciated that, in another exemplary embodiment of the present invention, write data are
Subsection can also be sector (Sector) or other sizes.It is said that in general, Memory Controller 104
Can be by physical blocks 304 (0)-304 (R) logic of reproducible nonvolatile memorizer module 106
Be grouped into data field 402, spare area 404, replace district 406 and hidden area 408, wherein divided
The physical blocks that group is data field 402 with spare area 404 can be taken turns and alternately be stored host computer system 1000
The data write, replace the physical blocks in district 406 in order to replace in data field and spare area
Bad physical blocks, and hidden area 408 is to store the system that Memory Controller 104 is used
Data.Particularly, host computer system 1000 cannot access hidden area 408.In other words, memorizer storage
The system information of cryopreservation device 100 can also store here, and host computer system 100 is under general scenario
Hidden area 408 cannot be accessed, therefore also cannot obtain the system information of memorizer memory devices 100.
It should be noted that the save location of system information is not limited to that.
Refer to Fig. 3, in order to make host computer system 1000 can store number in the mode of rotating easily
According to physical blocks access, Memory Controller 104 can configure logical address
LBA (0)-LBA (H) maps the multiple physical page in the physical blocks of data field 402, thus
Host computer system 1000 directly can carry out writing of data according to logical address LBA (0)-LBA (H)
Enter and read.Such as, when memorizer memory devices 100 is formatted, logical address
LBA (0)-LBA (H) can initially map in the physical blocks 340 (0)-340 (D) of data field 402
Multiple physical page.
Fig. 4 is the schematic block diagram according to the Memory Controller shown by an exemplary embodiment.
Refer to Fig. 4, Memory Controller 104 includes memory management circuitry 202, connects
Mouth 204, memory interface 206, electric power management circuit 208 and error checking and correcting circuit 210.
Memory management circuitry 202 is in order to control the overall work of Memory Controller 104.Specifically
For, memory management circuitry 202 has multiple control instruction, and at memorizer memory devices
100 power on (poweron) time, these a little control instructions can be performed to control Memory Controller 104
Overall work.Such as, memory management circuitry 202 can perform depositing as described in Fig. 2 with Fig. 3
Reservoir administrative mechanism.Additionally, in this exemplary embodiment, it is right that memory management circuitry 202 is also used for
Memorizer memory devices 100 performs Working mode switching method.
In this exemplary embodiment, the control instruction of memory management circuitry 202 is with firmware pattern
Carry out implementation.Such as, memory management circuitry 202 has microprocessor unit (not shown) and only reads
Memorizer (not shown), and these a little control instructions are to be programmed so far in the read only memory.When depositing
When reservoir storage device 100 works, these a little control instructions can be performed by microprocessor unit.
In another exemplary embodiment of the present invention, the control instruction of memory management circuitry 202 also may be used
Specific region (the example of reproducible nonvolatile memorizer module 106 it is stored in procedure code pattern
As, memory module is exclusively used in the system area of storage system data) in.Additionally, memorizer pipe
Reason circuit 202 has microprocessor unit (not shown), read only memory (not shown) and deposits at random
Access to memory (not shown).Particularly, this read only memory has driving code section, and when storage
When device controller 104 is enabled, microprocessor unit can first carry out this and drive code section to be stored in
Control instruction in reproducible nonvolatile memorizer module 106 is loaded into memory management circuitry
In the random access memory of 202.Afterwards, microprocessor unit can operate these a little control instructions.
Additionally, in another exemplary embodiment of the present invention, the control of memory management circuitry 202 refers to
Order a hardware pattern can also carry out implementation.Such as, memory management circuitry 202 include microcontroller,
Memory cell management circuit, memorizer write circuit, memory reading circuitry, memorizer are erased circuit
With data processing circuit.Memory cell management circuit, memorizer write circuit, memory reading circuitry,
Erase circuit and data processing circuit of memorizer is coupled to microcontroller.Wherein, memory cell management
Circuit is in order to manage the entity erased cell of reproducible nonvolatile memorizer module 106；Storage
Device write circuit in order to assign write instruction to incite somebody to action to reproducible nonvolatile memorizer module 106
Data write to reproducible nonvolatile memorizer module 106；Memory reading circuitry in order to
Reproducible nonvolatile memorizer module 106 is assigned reading instruction with non-volatile from duplicative
Property memory module 106 in read data；Memorizer erases circuit in order to non-volatile to duplicative
Property memory module 106 assign erase instruction with by data from type nonvolatile mould
Block 106 is erased；And data processing circuit is deposited to duplicative is non-volatile in order to process to be intended to write
The data of memory modules 106 and reading from reproducible nonvolatile memorizer module 106
Data.
Connect interface 204 be coupled to memory management circuitry 202 and card reader 1140 and use
With the instruction and data that receive with identify that host computer system 1000 is transmitted.It is to say, main frame system
The instruction that transmitted of system 1000 and data, via card reader 1140, then by connecting interface 204
It is sent to memory management circuitry 202.In this exemplary embodiment, connect interface 204 for symbol
Close the interface of SD standard.However, it is necessary to be appreciated that and the invention is not restricted to this, connect interface 204
Can also be to meet MS standard, MMC standard, CF standard, USB standard or the interface of other standards.
Memory interface 206 is coupled to memory management circuitry 202 and can make carbon copies in order to access
Formula non-volatile memory module 106.Deposit it is to say, be intended to write to duplicative is non-volatile
The data of memory modules 106 can be converted to via memory interface 206 that duplicative is non-volatile to be deposited
The receptible form of memory modules 106.
Electric power management circuit 208 is coupled to memory management circuitry 202 and in order to control storage
The power supply of device storage device 100.
Error checking and correcting circuit 210 are coupled to memory management circuitry 202 and in order to hold
Row error checking and correction program are to guarantee the correctness of data.Specifically, manage when memorizer
When circuit 202 receives write instruction from host computer system 1000, error checking and correcting circuit
210 can be error checking and the correcting code (Error of the data generation correspondence of this write instruction corresponding
Checking and Correcting Code, ECC Code), and memory management circuitry 202
The data of this write instruction corresponding extremely can be able to be made carbon copies with correcting code write with corresponding error checking
In formula non-volatile memory module 106.Afterwards, when memory management circuitry 202 is from making carbon copies
Can read, when formula non-volatile memory module 106 reads data, the mistake that these data are corresponding simultaneously
Check and correcting code, and error checking can be according to this error checking and correction with correcting circuit 210
The code data to being read perform error checking and correction program.
Specifically, memorizer memory devices 100, in addition to providing storage area, also stores spy
Different information, the such as system information of memorizer memory devices 100.Memorizer memory devices 100
System information is under general work pattern, and host computer system 1000 is typically cannot be carried out access, only
Special pattern (such as, the factory of memorizer memory devices 100 can be started by input special instruction
Quotient module formula (Vendor Mode)) system information of memorizer memory devices 100 is accessed.
Additionally, memorizer memory devices 100 also has the specific function being only capable of triggering in a special mode.
But, card reader 1140 can only identify and perform access instruction, and (such as, write instruction refers to reading
Make), and special instruction cannot be performed.For the foregoing reasons, the exemplary embodiment of the present invention provides
The changing method of a kind of mode of operation, can switch memorizer memory devices 100 by card reader 1140
Mode of operation.
Fig. 5 is the schematic diagram according to the Working mode switching method shown by an exemplary embodiment.
With reference to Fig. 5, when Memory Controller 104 (or memory management circuitry 202) is from host computer system
1000 receive after at least one access instruction, Memory Controller 104 (or memory management circuitry
202) can judge whether received access instruction meets pre-defined form.Refer to if this accesses a bit
Order meets pre-defined form, then Memory Controller 104 (or memory management circuitry 202) meeting
The mode of operation of memorizer memory devices 100 is switched to from first mode (i.e. general work pattern)
Second pattern (i.e. manufacturer's pattern).Particularly, under the second mode, Memory Controller 104 (or
Memory management circuitry 202) can be according to these a little access instructions, instruction memorizer memory devices 100 is held
The operation that row is corresponding.In detail, access instruction includes the first write instruction and the first write instruction
Including write word string, and Memory Controller 104 (or memory management circuitry 202) can be according to writing
Enter word string instruction memorizer memory devices 100 and perform the operation of corresponding write word string.Such as, storage
Device controller 104 (or memory management circuitry 202) can according to come from main frame this access
The write word string indicated by a write instruction in instruction, obtains from memorizer memory devices 100
Take at least one system information, and system information is deposited the buffering to memorizer memory devices 100
In memorizer 108.The most such as, Memory Controller 104 (or memory management circuitry 202) meeting
According to the write word string indicated by a write instruction in these a little access instructions coming from main frame,
And constantly reproducible nonvolatile memorizer module 106 is carried out virtual read-write, to take connection
The bandwidth of interface 204, thus so that memorizer memory devices 100 has enough time to perform background behaviour
Make.Must be noted that and be not necessarily limited to this performed by memorizer memory devices 100.
Identify the purpose of received access instruction according to pre-defined form, be to reduce master
Machine system 1000 is strayed into the probability of the second pattern.Owing to the mode of operation in this exemplary embodiment is cut
Change method, trigger the program of pattern switching merely with general access instruction, so that design is pre-
First definition format improves the difficulty of triggering pattern switching.
Such as, in the present invention one exemplary embodiment, these a little access instructions include that multiple first reads
Instruction.Whether Memory Controller 104 (or memory management circuitry 202) is judging access instruction
When meeting pre-defined form, when can first judge this little first reading instruction, no meeting pre-defines reading
Take form.If these a little first reading instructions meet pre-defined reading format, then Memory Controller
104 (or memory management circuitry 202) can then judge the write word indicated by the first write instruction
Whether string meets one of them of multiple pre-defined instruction format.When Memory Controller 104 (or
Memory management circuitry 202) confirm that the write word string of the first write instruction meets multiple pre-defining
During one of them of instruction format, Memory Controller 104 (or memory management circuitry 202) meeting
Identify that these a little access instructions meet pre-defined form, and by the work of memorizer memory devices 100
Pattern switches to the second pattern from first mode.
Specifically, pre-defined reading format can be there to be multiple different form, and the present invention is the most right
It limits.Such as, memorizer memory devices 100, generally as Fig. 3, is configured with multiple
Logical address LBA (0)-LBA (H) maps to the reality of reproducible nonvolatile memorizer module 106
The body page.If Memory Controller 104 (or memory management circuitry 202) is from host computer system 1000
In continuously receive multiple reading instruction all indicate among to logical address LBA (0)-LBA (H)
When one logical address (such as, the first logical address) is read out, then Memory Controller
104 (or memory management circuitry 202) can identify that these a little first reading instructions meet pre-defined reading
Take form.Such as, when receiving the first reading that the first logical address is read out by 10 instructions
During instruction fetch, memory management circuitry 202 can identify that these a little first reading instructions meet pre-defined
Reading format.
When continuously receive instruction same logical address is read out multiple reading instruction and
Identify that reading instruction meets the judgment rule of pre-defined reading format, only one example.At this
Inventing in the enforcement of another example, Memory Controller 104 (or memory management circuitry 202) also may be used
Multiple instructions received by identifying are that instruction reads logical address according to pre-defined order
During part logical address among LBA (0)-LBA (H), and the reading received by judging thus to identify
Instruction fetch meets pre-defined reading format.Such as, if multiple reading instructs instruction from logical address
When LBA (H) reads according to inverted order continuously to logical address LBA (H-10), then Memory Controller
104 (or memory management circuitry 202) can identify that received reading instruction is to meet to determine in advance
Justice reading format.It should be noted that the setting of pre-defined order is not limited with above-mentioned.
Received by judging when Memory Controller 104 (or memory management circuitry 202) first
After reading instruction meets pre-defined reading format, then can judge the write word of the first write instruction
Whether string meets pre-defined instruction format.Here, pre-defined instruction format is memory storage
The special instruction form that device 100 is used in a second mode.It is to say, memorizer controls
Device 104 (or memory management circuitry 202) is by judging that host computer system 1000 transmitted first writes
Enter instruction, confirm the most intentional work by memorizer memory devices 100 of host computer system 1000
Pattern switches to the second pattern.If memory management circuitry 202 judges the first write instruction indication
When the write word string shown does not meets pre-defined instruction format, then the reading instruction received by representative
May be only by chance to meet pre-defined reading format, rather than host computer system 1000 switching intentionally is deposited
The mode of operation of reservoir storage device 100.Therefore, Memory Controller 104 (or memorizer management
Circuit 202) can in the flrst mode, will write according to the logical address indicated by the first write instruction
In the physical page that word string write is corresponding.Otherwise, if memory management circuitry 202 judges that first writes
Enter the write word string indicated by instruction and meet pre-defined instruction format, then Memory Controller
104 (or memory management circuitry 202) can be by the mode of operation of memorizer memory devices, from the first mould
Formula switches to the second pattern.
Referring again to Fig. 5, under the second mode, Memory Controller 104 (or memorizer management electricity
Road 202) memorizer memory devices 100 can be indicated according to the write word string of aforementioned first write instruction
Perform corresponding operation.After detailed narration such as.In one embodiment of this invention, memorizer control
Device 104 (or memory management circuitry 202) processed can be according to the write word indicated by the first write instruction
String, obtains the system information of memorizer memory devices 100 from memorizer memory devices 100, and
The system information of memorizer memory devices 100 is put the buffer-stored to memorizer memory devices 100
In device 108.Additionally, Memory Controller 104 (or memory management circuitry 202) can be by part
Logical address LBA (0)-LBA (K) be identified as the corresponding system to memorizer memory devices 100 and believe
Breath.In other words, what logical address LBA (the 0)-LBA (K) of part was in the second pattern is fixed in advance
Justice logical address.Host computer system 1000 can be by assigning the pre-defined logical address (example of reading
Such as, LBA (K)) reading instruction, to read memorizer memory devices 100 in a second mode
System information.
Such as, in a second mode, Memory Controller 104 (or memory management circuitry 202)
The second reading instruction can be received from host computer system 1000, and judge indicated by the second reading instruction
Whether logical address is pre-defined logical address.If second reads instruction for pre-defining logically
During location, then Memory Controller 104 (or memory management circuitry 202) can be by corresponding system
Information, is taken out by buffer storage 108 and is sent to host computer system 1000.Otherwise, if second reads
When logical address LBA (K+1)-LBA (H) indicated by instruction fetch is not pre-defined logical address,
Then Memory Controller 104 (or memory management circuitry 202) can be by memorizer memory devices 100
Mode of operation switch back into first mode from the second pattern, and perform the second reading in the first mode
Instruction fetch, to send the data in reproducible nonvolatile memorizer module 106 to main frame system
System 1000.It should be noted that the system information of memorizer memory devices 100 not necessarily to be put
To in the buffer storage 108 of memorizer memory devices 100.Memory Controller 104 (or deposit
Reservoir management circuit 202) can when receive assigned by host computer system 1000 reading instruction time,
Just read memorizer memory devices 100 by Memory Controller 104 (or memory management circuitry 202)
System information.
Additionally, host computer system 1000 can also utilize write instruction, for memorizer memory devices
The system information of 100 is modified, or triggers memory storage further with access instruction
The specific function that device 100 is built-in.In other words, host computer system 1000 assign access instruction,
And Memory Controller 104 (or memory management circuitry 202) can be according to as in aforementioned access instruction
The write word string of the first write instruction, instruction memorizer memory devices 100 performs corresponding write word
The operation of string, and make memorizer memory devices 100 under the second mode, refer to according to different accesses
Form is made to carry out work.
In this exemplary embodiment, when after the access of host computer system 1000 completion system information, deposit
Memory controller 104 (or memory management circuitry 202) can be by the work of memorizer memory devices 100
Operation mode switches back to first mode from the second pattern.
Although in this exemplary embodiment, memory management circuitry 202 can be by system information transmission
To after host computer system 1000, the mode of operation of memorizer memory devices 100 is switched from the second pattern
To first mode.But, the invention is not restricted to this.In another exemplary embodiment, memorizer control
Device 104 (or memory management circuitry 202) processed also can receive and judge during the second pattern
Whether the write word string indicated by two write instructions meets the instruction format closing the second pattern.
If the write word string indicated by the second instruction meets the instruction format of second pattern of closedown, then store
Device controller 104 (or memory management circuitry 202) can be by the work of memorizer memory devices 100
Pattern is switched to first mode by the second pattern.
Fig. 6 is the flow chart according to the mode switching method shown by exemplary embodiment of the present invention.
With reference to Fig. 6, in step S610, receive multiple access instruction from host computer system 1000.
Then, in step S620, it is judged that whether the multiple access instructions received meet pre-defined
Form.If the multiple access instructions received meet pre-defined form, then in step S630,
The mode of operation of memorizer memory devices 100 is switched to the second pattern from first mode.Aforementioned deposit
Instruction fetch includes that the first write instruction and the first write instruction include writing word string, write word string instruction
Memorizer memory devices 100 performs the operation that should write word string.
Such as, in step S630, Memory Controller 104 (or memory management circuitry 202)
Can obtain from memorizer memory devices 100 according to the write word string indicated by the first write instruction
At least one system information, and buffering system information deposited to memorizer memory devices 100 deposits
In reservoir 108.After step S630, memorizer memory devices 100 has been in the second pattern
In.
If the multiple access instructions received do not meet pre-defined form, return step S610 weight
Newly received access instruction, in order to persistently judge whether follow-up access instruction meets pre-defined lattice
Formula.
Then, during the second pattern, in step S640, the second reading is received from host computer system
Instruction fetch.Then, in step S650, it is judged that second reads the logical address indicated by instruction
Whether it is pre-defined logical address.If the logical address indicated by the second reading instruction is fixed in advance
Justice logical address, then, in step S660, send at least one system information to host computer system
1000.Then, after sending at least one system information to host computer system 1000, in step
S670, switches back into first mode by memorizer memory devices 100 mode of operation from the second pattern.
If it should be noted that, if receiving the second write instruction and second during the second pattern writes
Enter the write word string indicated by instruction when meeting the instruction format for closing the second pattern, then store
The mode of operation of device storage device 100 is switched back into first mode by the second pattern.
In sum, according to embodiments of the invention, mode switching method and use the method
Memory Controller and memorizer memory devices, be fixed in advance by judging whether access instruction meets
Justice form, decides whether from first mode, the mode of operation of memorizer memory devices is switched to second
Pattern, can basis so that be connected to the memorizer memory devices of host computer system by card reader
The instruction of host computer system is operated pattern switching.Additionally, by the machine described in this exemplary embodiment
System, the probability by mistake switching to the second pattern also can greatly be lowered.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right
It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and
The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.
Claims (23)
1. a Working mode switching method, for a memorizer memory devices, it is characterised in that
One mode of operation of this memorizer memory devices includes a first mode and one second pattern, this work
Mode switching method includes:
At least one access instruction is received from a host computer system；
Judge whether this at least one access instruction meets one and pre-define form；And
If this at least one access instruction meets this pre-defined form, by this memorizer memory devices
Mode of operation switch to this second pattern, wherein this at least one access instruction bag from this first mode
Include one first write instruction and read instruction with multiple first, and this first write instruction includes a write
Word string,
Wherein this write word string indicates this memorizer memory devices to perform the behaviour that should write word string
Make,
The wherein said step judging whether this at least one access instruction meets this pre-defined form
Including:
Judge whether those the first reading instructions meet one and pre-define reading format；
If those first read instructions when meeting this pre-defined reading format, it is judged that this first is write
Enter instruction indicated by this write word string whether meet multiple pre-defined instruction format wherein it
One；And
If this write word string indicated by this first write instruction meets those pre-defined instructions
During one of them of form, identify that this at least one access instruction meets this pre-defined form.
Working mode switching method the most according to claim 1, it is characterised in that this is deposited
Reservoir storage device is a storage card,
The wherein said step receiving this at least one access instruction from this host computer system includes passing through
One card reader receives this at least one access instruction from this host computer system.
Working mode switching method the most according to claim 1, it is characterised in that this is deposited
Reservoir storage device includes a reproducible nonvolatile memorizer module, and multiple logical address quilt
Configure to map multiple physical page of this reproducible nonvolatile memorizer module,
Wherein said judge those first read instruction whether meet this pre-defined reading format
Step includes:
Judge whether those the first reading instructions indicate and read among those logical addresses continuously
First logical address；And
If those first read instruction instruction read continuously among those logical addresses this first
During logical address, identify that those the first reading instructions meet this pre-defined reading format.
Working mode switching method the most according to claim 1, it is characterised in that this is deposited
Reservoir storage device includes a reproducible nonvolatile memorizer module, and multiple logical address quilt
Configure to map multiple physical page of this reproducible nonvolatile memorizer module,
Wherein said judge those first read instruction whether meet this pre-defined reading format
Step includes:
Judge that those first read instruction and whether indicate and read those according to a pre-defined order and patrol
Collect at least part of logical address among address；And
If those the first reading instruction instructions read those logically according to this pre-defined order
During this at least part of logical address among location, identify that those first read instructions to meet this fixed in advance
Justice reading format.
Working mode switching method the most according to claim 1, it is characterised in that also wrap
Include:
If this write word string indicated by this first write instruction does not meets this pre-defined instruction
During form, in the first mode should according to the logical address indicated by this first write instruction
Write word string writes to a corresponding physical page.
Working mode switching method the most according to claim 1, it is characterised in that including:
During this second pattern, from this host computer system, receive one second reading instruction；
Judge that second whether read the logical address indicated by instruction be one to pre-define logic for this
Address；And
If this this logical address indicated by the second reading instruction is this pre-defined logical address
Time, send at least one system information to this host computer system.
Working mode switching method the most according to claim 6, it is characterised in that also wrap
Include:
After sending this at least one system information to this host computer system, this memory storage is filled
The mode of operation put switches to this first mode from this second pattern.
Working mode switching method the most according to claim 1, it is characterised in that including:
According to this write word string indicated by this first write instruction from this memorizer memory devices
Obtain at least one system information and this at least one system information being deposited to this memory storage to fill
In the buffer storage put.
Working mode switching method the most according to claim 1, it is characterised in that including:
During this second pattern, receive one second write instruction；
Judge whether this write word string indicated by the second write instruction meets those and pre-define
For closing the instruction format of this second pattern in instruction format；And
If this write word string indicated by this second write instruction meets for closing this second mould
During the instruction format of formula, the mode of operation of this memorizer memory devices is switched to from this second pattern
This first mode.
10. a Memory Controller, in order to control a memorizer memory devices, it is characterised in that
One mode of operation of this memorizer memory devices includes a first mode and one second pattern, this storage
Device controller includes:
One connects interface；
One memory interface, in order to be coupled to a reproducible nonvolatile memorizer module；And
One memory management circuitry, be coupled to this connection interface and this memory interface and in order to from
One host computer system receives at least one access instruction,
Wherein this memory management circuitry judges whether this at least one access instruction meets one and determine in advance
Justice form,
Wherein if this at least one access instruction meets this pre-defined form, this memorizer manages
The mode of operation of this memorizer memory devices is switched to this second pattern from this first mode by circuit,
This at least one access instruction include one first write instruction with multiple first read instruction, and this first
Write instruction includes a write word string, and this memory management circuitry is right according to the execution of this write word string
The operation of word string should be write,
Wherein in the described work judging whether this at least one access instruction meets this pre-defined form
In work, this memory management circuitry can judge whether those the first reading instructions meet one and pre-define
Reading format；
Wherein if those the first reading instructions meet this pre-defined reading format, this memorizer
Management circuit can judge whether this write word string indicated by this first write instruction meets multiple pre-
First define one of them of instruction format,
If this write word string indicated by this first write instruction meets those pre-defined instructions
During one of them of form, this memory management circuitry can identify that this at least one access instruction meets this
Pre-defined form.
11. Memory Controllers according to claim 10, it is characterised in that this storage
Device storage device be a storage card and this memory management circuitry by a card reader from this main frame
System receives this at least one access instruction.
12. Memory Controllers according to claim 10, it is characterised in that this storage
Device storage device includes a reproducible nonvolatile memorizer module, and multiple logical address is joined
Put to map multiple physical page of this reproducible nonvolatile memorizer module,
Wherein judge whether those the first reading instructions meet this pre-defined reading format described
Work in, this memory management circuitry can judge that those first read whether instruction indicates continuously reading
Take one first logical address among those logical addresses,
If those first read instruction instruction read continuously among those logical addresses this first
During logical address, it is fixed in advance that this memory management circuitry can identify that those the first reading instructions meet this
Justice reading format.
13. Memory Controllers according to claim 10, it is characterised in that this storage
Device storage device includes a reproducible nonvolatile memorizer module, and multiple logical address is joined
Put to map multiple physical page of this reproducible nonvolatile memorizer module,
Wherein judge whether those the first reading instructions meet this pre-defined reading format described
Work in, this memory management circuitry can judge those first read instruction whether indicate according to one
Pre-defined order reads at least part of logical address among those logical addresses,
If those the first reading instruction instructions read those logically according to this pre-defined order
During this at least part of logical address among location, this memory management circuitry can identify that those first are read
Instruction fetch meets this pre-defined reading format.
14. Memory Controllers according to claim 10, it is characterised in that if should
When this write word string indicated by first write instruction does not meets this pre-defined instruction format, this is deposited
Reservoir management circuit is more in order in the first mode according to indicated by this first write instruction
Logical address is by corresponding for this write word string write to physical page.
15. Memory Controllers according to claim 10, it is characterised in that this storage
Device management circuit more in order to during this second pattern, receives one second reading from this host computer system
Instruction and judge that second whether read the logical address indicated by instruction be one to pre-define for this
Logical address,
If this this logical address indicated by the second reading instruction is this pre-defined logical address
Time, this memory management circuitry can send at least one system information to this host computer system.
16. Memory Controllers according to claim 15, it is characterised in that should
After at least one system information sends this host computer system to, this memory management circuitry can be by this storage
The mode of operation of device storage device switches to this first mode from this second pattern.
17. Memory Controllers according to claim 10, it is characterised in that this storage
Device manages circuit according to this write word string indicated by this first write instruction from this memory storage
Device obtains at least one system information and this at least one system information is deposited to this memorizer
In one buffer storage of storage device.
18. Memory Controllers according to claim 10, it is characterised in that this storage
Device management circuit receives one second write instruction during this second pattern and judges that this second is write
Enter whether indicated by instruction one write word string meets in those pre-defined instruction formats for closing
Close the instruction format of this second pattern,
If this write word string indicated by this second write instruction meets for closing this second mould
During the instruction format of formula, this memory management circuitry can be by the mode of operation of this memorizer memory devices
This first mode is switched to from this second pattern.
19. 1 kinds of memorizer memory devices, it is characterised in that including:
A connector；
One reproducible nonvolatile memorizer module；
One buffer storage；And
One Memory Controller, is coupled to this reproducible nonvolatile memorizer module, this connection
Device and this buffer storage and in order to receive at least one access instruction from a host computer system,
Wherein this Memory Controller judges whether this at least one access instruction meets one and pre-define
Form,
Wherein if this at least one access instruction meets this pre-defined form, this memorizer controls
The mode of operation of this memorizer memory devices is switched to one second pattern from a first mode by device, should
At least one access instruction includes that one first write instruction reads instruction with multiple first, and this first is write
Enter instruction and include a write word string, and this Memory Controller performs should according to this write word string
The operation of write word string,
Wherein in the described work judging whether this at least one access instruction meets this pre-defined form
In work, this Memory Controller can judge whether those the first reading instructions meet a pre-defined reading
Take form；
Wherein if those the first reading instructions meet this pre-defined reading format, this memorizer
Controller can judge this write word string indicated by this first write instruction whether meet multiple in advance
One of them of definition instruction format,
If this write word string indicated by this first write instruction meets those pre-defined instructions
During one of them of form, it is pre-that this Memory Controller can identify that this at least one access instruction meets this
First definition format.
20. memorizer memory devices according to claim 19, it is characterised in that this is even
Connect device and be coupled to be connected to a card reader of this host computer system and this Memory Controller by should
Card reader receives this at least one access instruction from this host computer system.
21. memorizer memory devices according to claim 19, it is characterised in that this is deposited
Memory controller configures multiple logical addresses to map this reproducible nonvolatile memorizer module
Multiple physical page,
Wherein judge whether those the first reading instructions meet this pre-defined reading format described
Work in, this Memory Controller can judge that those first read whether instruction indicates continuously reading
One first logical address among those logical addresses,
If those first read instruction instruction read continuously among those logical addresses this first
During logical address, this Memory Controller can identify that those the first reading instructions meet this and pre-define
Reading format.
22. memorizer memory devices according to claim 19, it is characterised in that this is deposited
Memory controller more in order to during this second pattern, receives one second reading from this host computer system
Instruction and judge that second whether read the logical address indicated by instruction be one to pre-define for this
Logical address,
If this this logical address indicated by the second reading instruction is this pre-defined logical address
Time, this Memory Controller can send at least one system information to this host computer system.
23. memorizer memory devices according to claim 19, it is characterised in that this is deposited
Memory controller can store up from this memorizer according to this write word string indicated by this first write instruction
Cryopreservation device obtains at least one system information and this at least one system information is deposited to this storage
In this buffer storage of device storage device.
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| CN201210550006.7A CN103870209B (en) | 2012-12-18 | 2012-12-18 | Working mode switching method, Memory Controller and memorizer memory devices |
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| CN201210550006.7A CN103870209B (en) | 2012-12-18 | 2012-12-18 | Working mode switching method, Memory Controller and memorizer memory devices |
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| CN106406492B (en) * | 2015-07-30 | 2019-10-25 | 华为技术有限公司 | Mixing storage equipment, computer, control equipment and the method for reducing power consumption |
| KR102535243B1 (en) * | 2017-12-18 | 2023-05-23 | 에스케이하이닉스 주식회사 | Memory system and operating method thereof |
| CN110265075B (en) * | 2018-03-12 | 2021-06-25 | 龙芯中科技术股份有限公司 | Control method and system of memory interface |
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| CN102200946A (en) * | 2010-03-22 | 2011-09-28 | 群联电子股份有限公司 | Data access method, memory controller and storage system |
| CN102707969A (en) * | 2012-04-25 | 2012-10-03 | 中颖电子股份有限公司 | Storage card capable of updating firmware at any time in communication and firmware updating method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102200946A (en) * | 2010-03-22 | 2011-09-28 | 群联电子股份有限公司 | Data access method, memory controller and storage system |
| CN102707969A (en) * | 2012-04-25 | 2012-10-03 | 中颖电子股份有限公司 | Storage card capable of updating firmware at any time in communication and firmware updating method thereof |
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