CN103869599A - Optical proximity correction method for through hole - Google Patents
Optical proximity correction method for through hole Download PDFInfo
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- CN103869599A CN103869599A CN201410110058.1A CN201410110058A CN103869599A CN 103869599 A CN103869599 A CN 103869599A CN 201410110058 A CN201410110058 A CN 201410110058A CN 103869599 A CN103869599 A CN 103869599A
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Abstract
The invention provides an optical proximity correction method for a through hole. The optical proximity correction method comprises the following steps: before carrying out optical proximity correction on the through hole, judging electric potential relations between the specific through hole and four adjacent through holes at four side edges respectively, wherein the electric potential relations include an identical electric potential relation and a non-identical electric potential relation; increasing one identical electric potential filling value to the corresponding side edge of the specific through hole when the specific through hole and the adjacent through holes at the side edges of the specific through hole are in the identical electric potential relation; increasing one non-identical electric potential filling value to the corresponding side edge of the specific through hole when the specific through hole and the adjacent through holes at the side edges of the specific through hole are in the non-identical electric potential relation; performing optical proximity correction on the through hole which is specially treated.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of optics for through hole and close on modification method.
Background technology
Through hole is used for connecting upper/lower layer metallic line, and under existing photoetching process condition, the lithographic process window of through hole is usually little a lot of than the lithographic process window of metal wire.The lithographic process window of through hole has become the key factor that affects product yield.OPC(OpticalProximityCorrection, optics closes on correction) conventional through hole correction is generally first all through holes to be carried out to entirety to amplify, then the through hole after to entirety amplification is revised with OPC model.
Along with integrated circuit technique node is more and more less, the overall up-sizing of through hole is difficult to control.First, the entirety of through hole is amplified not enough, and the lithographic process window of isolated through hole can be very little.Only have an isolated through hole if connect upper/lower layer metallic line, i.e. this through hole and around all idiostatic relations of right and wrong of arbitrary through hole, once this through hole becomes blind hole, this through hole circuit can open circuit.Secondly, the entirety of through hole is amplified excessive, although the lithographic process window of isolated through hole can increase, intensive through hole also can increase with the risk that around through hole merges.If intensive through hole is idiostatic relation, the merging of through hole can affect device performance; If the idiostatic relation of intensive through hole right and wrong, the merging of through hole can cause different potentials through hole circuit to be short-circuited.Therefore, the entirety of through hole is amplified and can not have been reflected the residing current potential environment of each through hole, conventional OPC modification method also can not guarantee the lithographic process window of each through hole.
Summary of the invention
Technical matters to be solved by this invention is for the above-mentioned defect existing in prior art, and the optics for through hole that a kind of lithographic process window that can improve to greatest extent each through hole is provided and then improves product yield closes on modification method.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of optics for through hole to close on modification method, it is characterized in that comprising:
Through hole is being carried out before optics closes on correction, judge particular via respectively with the electric potential relation of four adjacent through-holes of its four side edge, described electric potential relation comprises idiostatic relation and non-idiostatic relation;
In idiostatic relation, make the corresponding side of particular via increase an idiostatic benefit value for the adjacent through-holes of described particular via and described particular via side edge;
In non-idiostatic relation, make the corresponding side of particular via increase a non-idiostatic benefit value for the adjacent through-holes of described particular via and described particular via side edge;
Through hole through special processing is carried out to optics and close on correction.
Preferably, when the upper strata metal wire being connected from one of described four adjacent through-holes with lower metal line when the upper strata metal wire that described particular via connects and lower metal line are all different, one of described particular via and described four adjacent through-holes are non-idiostatic relation.
Preferably, when the upper strata metal wire that connects with one of described four adjacent through-holes when the upper strata metal wire that described particular via connects is identical, one of described particular via and described four adjacent through-holes are idiostatic relation.
Preferably, when lower metal line that the lower metal line connecting when described particular via connects with one of described four adjacent through-holes is identical, one of described particular via and described four adjacent through-holes are idiostatic relation.
Preferably, idiostatic benefit value is greater than non-idiostatic benefit value.
Preferably, idiostatic benefit value between 0.5% critical size to through hole of the critical size of through hole 30% between.
Preferably, non-idiostatic benefit value between 0.5% critical size to through hole of the critical size of through hole 15% between.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its advantage of following and feature, wherein:
Fig. 1 to Fig. 4 schematically shows various idiostatic relation and the non-idiostatic relation between through hole.
Fig. 5 schematically shows each limit of through hole and the electric potential relation of adjacent through-holes according to the preferred embodiment of the invention.
Fig. 6 schematically shows each limit of through hole according to the preferred embodiment of the invention and adds corresponding benefit value according to electric potential relation.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
The present invention proposes to judge two electric potential relation between through hole in conjunction with upper/lower layer metallic line, and each side of through hole is increased to corresponding benefit value according to electric potential relation, carries out conventional OPC correction more afterwards to adding the through hole of benefit value.During the OPC that this method can make up through hole routine revises, can not reflect and the difference of each through hole current potential environment of living in the situation that current potential environment allows, improve to greatest extent the lithographic process window of each through hole.
Particularly, in the time through hole being carried out to OPC correction, first judge two electric potential relation between through hole in conjunction with upper/lower layer metallic line.If adjacent two through holes are idiostatic relations, the side that through hole is met to idiostatic relation adds an idiostatic benefit value; If adjacent two idiostatic relations of through hole right and wrong, add a different potentials benefit value to the side that through hole meets non-idiostatic relation.Carried out conventional OPC correction to adding the through hole of benefit value more afterwards.
Below with reference to accompanying drawing, the preferred embodiments of the present invention are described
In the time through hole being carried out to OPC correction, first in calibre software, judge two electric potential relation between through hole in conjunction with upper/lower layer metallic line.Fig. 1 to Fig. 4 schematically shows various idiostatic relation and the non-idiostatic relation between through hole.As shown in the figure, the first through hole 30 is connected lower metal line 10 and upper strata metal wire 20 with the second through hole 31.
If the first through hole 30 is connected with same upper strata metal wire 20 with same lower metal line 10 with the second through hole 31, as shown in Figure 1, these two through holes are first idiostatic relations so.If the first through hole 30 is connected with two upper strata metal wires 20 with same lower metal line 10 with the second through hole 31, as shown in Figure 2, these two through holes are second idiostatic relations so.If the first through hole 30 is connected with same upper strata metal wire 20 with two lower metal lines 10 with the second through hole 31, as shown in Figure 3, these two through holes are the 3rd idiostatic relations so.If the first through hole 30 is connected with two upper strata metal wires 20 with two lower metal lines 10 with the second through hole 31, as shown in Figure 4, these two idiostatic relations of through hole right and wrong so.
Then can determine each side of each through hole and the electric potential relation of adjacent through-holes by the electric potential relation between two through holes.As shown in Figure 5, the first through hole 30 meets with the first electric potential relation with the second adjacent through hole 31 at e1 place, first side, the first through hole 30 meets the second idiostatic relation with the adjacent third through-hole 32 at e2 place, second side, the adjacent fourth hole 33 at the first through hole 30 and the 3rd side e3 place meets the 3rd idiostatic relation, and the adjacent fifth hole 34 at the first through hole 30 and four side e4 place meets non-idiostatic relation.
After determining the electric potential relation of adjacent through-holes of each through hole and its each side edge, it is relevant with the critical size of through hole that the side that through hole is met to idiostatic relation increases the idiostatic benefit value of idiostatic benefit value b1(b1, common idiostatic benefit value b1 is between the critical size * 0.5% to the critical size * 30% of through hole of through hole), it is relevant with the critical size of through hole that the side that through hole is met to non-idiostatic relation increases the non-idiostatic benefit value b2 of a non-idiostatic benefit value b2(, conventionally non-idiostatic benefit value b2 is between the critical size * 0.5% to the critical size * 15% of through hole of through hole).
Generally, as shown in above-mentioned example, idiostatic benefit value b1 is greater than non-idiostatic benefit value b2.
As shown in Figure 6, take the first through hole 30 as example, the e1 side of the first through hole 30, e2 side and e3 side add respectively an idiostatic benefit value b1, and the e4 side of the first through hole 30 adds a non-idiostatic benefit value b2.And preferably, other all through holes also can add corresponding benefit value to each side of through hole according to electric potential relation according to the identical method of through hole 30.
Wherein, the implication that the side of through hole increases benefit value refers to, and makes the amount of the outwards mobile benefit value of this side of through hole, expands with the size that makes through hole.
Finally carried out conventional OPC correction to adding the through hole of benefit value again.
The present invention proposes to judge two electric potential relation between through hole in conjunction with upper/lower layer metallic line, and each side of through hole is increased to corresponding benefit value according to electric potential relation, carries out conventional OPC correction more afterwards to adding the through hole of benefit value.During the OPC that this method can make up through hole routine revises, can not reflect and the difference of each through hole current potential environment of living in the situation that current potential environment allows, improve to greatest extent the lithographic process window of each through hole, and then raising product yield.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as term " first " in instructions, " second ", " the 3rd " are only for distinguishing each assembly, element, step of instructions etc., rather than for representing logical relation or the ordinal relation etc. between each assembly, element, step.
Be understandable that, although the present invention discloses as above with preferred embodiment, but above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (7)
1. close on a modification method for the optics of through hole, it is characterized in that comprising:
Through hole is being carried out before optics closes on correction, judge particular via respectively with the electric potential relation of four adjacent through-holes of its four side edge, described electric potential relation comprises idiostatic relation and non-idiostatic relation;
In idiostatic relation, make the corresponding side of particular via increase an idiostatic benefit value for the adjacent through-holes of described particular via and described particular via side edge;
In non-idiostatic relation, make the corresponding side of particular via increase a non-idiostatic benefit value for the adjacent through-holes of described particular via and described particular via side edge;
Through hole through special processing is carried out to optics and close on correction.
2. the optics for through hole according to claim 1 closes on modification method, it is characterized in that, when the upper strata metal wire being connected from one of described four adjacent through-holes with lower metal line when the upper strata metal wire that described particular via connects and lower metal line are all different, one of described particular via and described four adjacent through-holes are non-idiostatic relation.
3. the optics for through hole according to claim 1 and 2 closes on modification method, it is characterized in that, when the upper strata metal wire that connects with one of described four adjacent through-holes when the upper strata metal wire that described particular via connects is identical, one of described particular via and described four adjacent through-holes are idiostatic relation.
4. the optics for through hole according to claim 1 and 2 closes on modification method, it is characterized in that, when lower metal line that the lower metal line connecting when described particular via connects with one of described four adjacent through-holes is identical, one of described particular via and described four adjacent through-holes are idiostatic relation.
5. the optics for through hole according to claim 1 and 2 closes on modification method, it is characterized in that, idiostatic benefit value is greater than non-idiostatic benefit value.
6. the optics for through hole according to claim 1 and 2 closes on modification method, it is characterized in that, idiostatic benefit value between 0.5% critical size to through hole of the critical size of through hole 30% between.
7. the optics for through hole according to claim 1 and 2 closes on modification method, it is characterized in that, non-idiostatic benefit value between 0.5% critical size to through hole of the critical size of through hole 15% between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410110058.1A CN103869599A (en) | 2014-03-24 | 2014-03-24 | Optical proximity correction method for through hole |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410110058.1A CN103869599A (en) | 2014-03-24 | 2014-03-24 | Optical proximity correction method for through hole |
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| CN103869599A true CN103869599A (en) | 2014-06-18 |
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| CN201410110058.1A Pending CN103869599A (en) | 2014-03-24 | 2014-03-24 | Optical proximity correction method for through hole |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104808433A (en) * | 2015-03-20 | 2015-07-29 | 上海华力微电子有限公司 | OPC (optical proximity correction) method for two adjacent equal-potential through holes |
| CN105304558A (en) * | 2015-10-28 | 2016-02-03 | 上海华力微电子有限公司 | Optical proximity correction method for via hole layer |
| CN109709762A (en) * | 2018-12-29 | 2019-05-03 | 上海华力集成电路制造有限公司 | A kind of OPC modification method of via layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020098427A1 (en) * | 2001-01-23 | 2002-07-25 | Ming-Jui Chen | Contact hole model-based optical proximity correction method |
| US20060053402A1 (en) * | 2004-09-08 | 2006-03-09 | Suigen Kyoh | Pattern data correcting method, photo mask manufacturing method, semiconductor device manufacturing method, program and semiconductor device |
| CN101458446A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Optical approaching correction, photo mask production and graphic method |
-
2014
- 2014-03-24 CN CN201410110058.1A patent/CN103869599A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020098427A1 (en) * | 2001-01-23 | 2002-07-25 | Ming-Jui Chen | Contact hole model-based optical proximity correction method |
| US20060053402A1 (en) * | 2004-09-08 | 2006-03-09 | Suigen Kyoh | Pattern data correcting method, photo mask manufacturing method, semiconductor device manufacturing method, program and semiconductor device |
| CN101458446A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Optical approaching correction, photo mask production and graphic method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104808433A (en) * | 2015-03-20 | 2015-07-29 | 上海华力微电子有限公司 | OPC (optical proximity correction) method for two adjacent equal-potential through holes |
| CN104808433B (en) * | 2015-03-20 | 2019-06-28 | 上海华力微电子有限公司 | The optical proximity correction method of two neighboring same current potential through-hole |
| CN105304558A (en) * | 2015-10-28 | 2016-02-03 | 上海华力微电子有限公司 | Optical proximity correction method for via hole layer |
| CN109709762A (en) * | 2018-12-29 | 2019-05-03 | 上海华力集成电路制造有限公司 | A kind of OPC modification method of via layer |
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Application publication date: 20140618 |
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