CN103840314B - A kind of interrupt switch structure of SIM - Google Patents
A kind of interrupt switch structure of SIM Download PDFInfo
- Publication number
- CN103840314B CN103840314B CN201410086186.7A CN201410086186A CN103840314B CN 103840314 B CN103840314 B CN 103840314B CN 201410086186 A CN201410086186 A CN 201410086186A CN 103840314 B CN103840314 B CN 103840314B
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- China
- Prior art keywords
- sim
- shell fragment
- torr
- pin shell
- signal circuit
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- 238000004891 communication Methods 0.000 claims abstract description 7
- 239000012634 fragment Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Abstract
The invention discloses the interrupt switch structure of a kind of SIM, including SIM torr, also include the conductive pin being arranged in pairs, described conductive pin is arranged on cell phone mainboard and is butted on the back side of SIM torr, with to two conductive pins respectively with interrupt signal circuit and earth signal circuit communication, the back side of described SIM torr is provided with conductive layer.The present invention is provided with conductive pin, and the SIM torr back side is provided with conductive layer, contacted with conductive pin by the conductive layer at the SIM torr back side, can be by interrupt signal circuit and earth signal circuit communication, thus the information of the insertion of prompting user's SIM is produced when SIM inserts mobile phone, when SIM is extracted, cut off the connection of interrupt signal circuit and earth signal circuit, produce the information that SIM is extracted.
Description
Technical field
The present invention relates to field of mobile terminals, particularly to the interrupt switch structure of the high SIM of a kind of reliability.
Background technology
At present, for the convenience used, a lot of mobile phones use SIM card hot plug design, and this is accomplished by arranging an interrupt switch, in order to touch interrupt switch when SIM torr inserts or pull out, form information.Existing interrupt switch structure has following two: a kind of for arrange microswitch at cell phone mainboard, touch microswitch when SIM torr is inserted and form information, the defect of this kind of structure is to need to take more cell phone mainboard space, is unfavorable for the lightening design of mobile phone；Another kind is to connect cell phone mainboard and SIM torr with elastic plate mechanism, touching elastic plate mechanism when SIM torr is inserted, form information, the defect of this structure is that shell fragment easily lost efficacy, cannot ensure that cell phone mainboard is connected with the effective of SIM torr, cause SIM cannot realize hot plug.The structure being exactly also above two interrupt switch is the most complex, and production cost is higher.
Summary of the invention
The present invention provides the interrupt switch structure of a kind of SIM, reliable operation, and simple in construction is cheap, also can save cell phone mainboard space, it is simple to the lightening design of mobile phone.
In order to solve above-mentioned technical problem, the present invention takes techniques below scheme:
A kind of interrupt switch structure of SIM, including SIM torr, also include the conductive pin being arranged in pairs, described conductive pin is arranged on cell phone mainboard and is butted on the back side of SIM torr, with to two conductive pins respectively with interrupt signal circuit and earth signal circuit communication, the back side of described SIM torr is provided with conductive layer.
Described with to two conductive pins be butted on the both sides at the SIM torr back side respectively.
Described conductive pin, for interrupting pin shell fragment and being welded on cell phone mainboard, interrupts the laminated structure that pin shell fragment is bending.
Described interruption pin shell fragment is provided with projection, and this projection is positioned in interruption pin shell fragment and is butted in the one side at the SIM torr back side.
Solder side on described interruption pin shell fragment is provided with Gold plated Layer, and interruption pin shell fragment is provided with the through hole running through solder side.
The making material of described interruption pin shell fragment is superhard stainless steel.
The material thickness of described interruption pin shell fragment is 0.1mm to 0.2mm.
The quantity that arranges of described interruption pin shell fragment is a pair or two right.
The present invention is provided with conductive pin, and the SIM torr back side is provided with conductive layer, contacted with conductive pin by the conductive layer at the SIM torr back side, can be by interrupt signal circuit and earth signal circuit communication, thus the information of the insertion of prompting user's SIM is produced when SIM inserts mobile phone, when SIM is extracted, cut off the connection of interrupt signal circuit and earth signal circuit, produce the information that SIM is extracted；Conductive pin uses and interrupts pin shell fragment, interrupt the structure of pin shell fragment, material and material thickness to be and be specifically designed, SIM torr can be ensured and effectively contact with interrupt pin shell fragment, avoid the occurrence of inefficacy, also it is effectively utilized the space between SIM torr and cell phone mainboard, thus saved the lightening design of the inner space of mobile phone, beneficially mobile phone；Use two designs to interruption pin shell fragment, further ensure the reliability contacted between SIM torr with interruption pin shell fragment.
Accompanying drawing explanation
Fig. 1 is the parts decomposition texture schematic diagram of the embodiment of the present invention one；
Fig. 2 is the working state structure schematic diagram of the embodiment of the present invention one；
Fig. 3 is the structure for amplifying schematic diagram in Fig. 2 at A；
Fig. 4 is the parts decomposition texture schematic diagram of the embodiment of the present invention two；
Fig. 5 is the working state structure schematic diagram of the embodiment of the present invention two；
Fig. 6 is the structure for amplifying schematic diagram in Fig. 5 at B；
Fig. 7 is the structural representation interrupting pin shell fragment of the present invention.
In figure, label show: 1-SIM Kato, 2-cell phone mainboard, and 3-interrupts pin shell fragment, and 31-is protruding, 32-solder side, 33-through hole.
Detailed description of the invention
For the ease of the understanding of those skilled in the art, the invention will be further described below in conjunction with the accompanying drawings.
Embodiment one
As shown in Figure 1, Figure 2 and Figure 3, the interrupt switch structure of a kind of SIM, including SIM torr 1, also include the conductive pin being arranged in pairs, conductive pin, for interrupting pin shell fragment 3, interrupts the laminated structure that pin shell fragment 3 is bending.Interrupting pin shell fragment 3 to be provided with a pair, this is welded on cell phone mainboard 2 interrupting pin shell fragment 3, and one interrupts pin shell fragment 3 and is connected with interrupt signal circuit, and another interrupts pin shell fragment 3 and is connected with earth signal circuit.The back side of SIM torr 1 is provided with conductive layer, and when SIM torr 1 is inserted into working position, two interrupt pin shell fragment 3 and are butted on the both sides at SIM torr 1 back side respectively.
As it is shown in fig. 7, interrupt pin shell fragment 3 to be provided with protruding 31, this projection 31 is positioned in interruption pin shell fragment 3 and is butted in the one side at SIM torr 1 back side.Interrupting the solder side 32 on pin shell fragment 1 and be provided with Gold plated Layer, and interruption pin shell fragment 3 is provided with the through hole 33 running through solder side, during welding, scolding tin can pass through through hole 33 and emits the back side for solder side 32, increases the reliability of welding.The making material interrupting pin shell fragment 3 is superhard stainless steel, it is ensured that interrupt the lasting elastic force of pin shell fragment 3, it is to avoid failure phenomenon occur after using a period of time.The material thickness interrupting pin shell fragment 3 is 0.1mm to 0.2mm, can reduce the lightening design in the space between SIM torr 1 and cell phone mainboard 2, beneficially mobile phone.
During use, SIM is put in SIM torr 1, SIM torr 1 is inserted in mobile phone, SIM torr 1 is inserted when putting in place, two interrupt pin shell fragment 3 and are butted on the both sides at SIM torr 1 back side respectively, now, interrupt signal circuit is by interrupting conductive layer and the earth signal circuit communication of pin shell fragment 3 and SIM torr 1 back side, thus forms the information that SIM inserts.When taking out SIM, first SIM torr 1 being extracted from mobile phone, now SIM torr 1 departs from interruption pin shell fragment 3, and interrupt signal circuit is cut off with earth signal circuit, and mobile phone forms the information that SIM is pulled out.
Embodiment two
As shown in Figure 4, Figure 5 and Figure 6, the interrupt switch structure of a kind of SIM, including SIM torr 1, also include the conductive pin being arranged in pairs, conductive pin is for interrupting pin shell fragment 3, and the interruption pin shell fragment 3 used in the present embodiment is identical with embodiment one.It is right that interruption pin shell fragment 3 is provided with two, two pairs interrupt pin shell fragment 3 and are all welded on cell phone mainboard 2, the back side of SIM torr 1 is provided with conductive layer, when SIM torr is inserted into working position, with to two interruption pin shell fragments 3 be butted on the both sides at the SIM back side respectively, being butted on two interruption pin shell fragment 3 disconnecting signal circuits of side, two the interruption pin shell fragments 3 being butted on opposite side connect earth signal circuit.
During use, SIM is put in SIM torr 1, SIM torr 1 is inserted in mobile phone, SIM torr 1 is inserted when putting in place, four interrupt pin shell fragment 3 and are all butted on the conductive layer at SIM torr 1 back side, now, interrupt signal circuit is by interrupting conductive layer and the earth signal circuit communication of pin shell fragment 3 and SIM torr 1 back side, thus forms the information that SIM inserts.When taking out SIM, first SIM torr 1 being extracted from mobile phone, now SIM torr 1 departs from interruption pin shell fragment 3, and interrupt signal circuit is cut off with earth signal circuit, and mobile phone forms the information that SIM is pulled out.Be provided with two to interrupt pin shell fragment 3, even if be butted on the side of SIM torr 1 one interrupt pin shell fragment 3 lost efficacy, also will not cause the interruption that interrupt signal circuit is connected with earth signal circuit, reduce the generation of abnormal failure.
Above-described embodiment is the present invention preferably implementation, without departing from the inventive concept of the premise, the present invention simply makes directly displacement or the replacement of equivalent, within belonging to protection scope of the present invention.
Claims (7)
1. the interrupt switch structure of a SIM, including SIM torr (1), it is characterized in that: also include the conductive pin being arranged in pairs, described conductive pin is arranged on cell phone mainboard (2), during duty, conductive pin is butted on the back side of SIM torr, with to two conductive pins respectively with interrupt signal circuit and earth signal circuit communication, the back side of described SIM torr is provided with conductive layer；
Described conductive pin, for interrupting pin shell fragment (3) and being welded on cell phone mainboard (2), interrupts the laminated structure that pin shell fragment is bending；
Solder side (32) on described interruption pin shell fragment (3) is provided with Gold plated Layer, and interruption pin shell fragment is provided with the through hole (33) running through solder side.
The interrupt switch structure of SIM the most according to claim 1, it is characterised in that: described with to two conductive pins be butted on the both sides at SIM torr (1) back side respectively.
The interrupt switch structure of SIM the most according to claim 2, it is characterised in that: described interruption pin shell fragment (3) is provided with projection (31), and this projection is positioned in interruption pin shell fragment and is butted in the one side at SIM torr (1) back side.
The interrupt switch structure of SIM the most according to any one of claim 1 to 3, it is characterised in that: the making material of described interruption pin shell fragment (3) is superhard stainless steel.
The interrupt switch structure of SIM the most according to claim 4, it is characterised in that: the material thickness of described interruption pin shell fragment (3) is 0.1mm to 0.2mm.
The interrupt switch structure of SIM the most according to claim 5, it is characterised in that: the quantity that arranges of described interruption pin shell fragment (3) is a pair.
The interrupt switch structure of SIM the most according to claim 5, it is characterised in that: the quantity that arranges of described interruption pin shell fragment (3) is two right.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410086186.7A CN103840314B (en) | 2014-03-11 | 2014-03-11 | A kind of interrupt switch structure of SIM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410086186.7A CN103840314B (en) | 2014-03-11 | 2014-03-11 | A kind of interrupt switch structure of SIM |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103840314A CN103840314A (en) | 2014-06-04 |
| CN103840314B true CN103840314B (en) | 2016-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410086186.7A Expired - Fee Related CN103840314B (en) | 2014-03-11 | 2014-03-11 | A kind of interrupt switch structure of SIM |
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| CN (1) | CN103840314B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105071823B (en) * | 2015-07-16 | 2018-11-02 | 惠州Tcl移动通信有限公司 | Mobile terminal containing electric power on off mechanism |
| CN107220568A (en) * | 2017-06-08 | 2017-09-29 | 滨州学院 | One kind is with fool proof computer |
| CN108365857B (en) * | 2018-02-01 | 2020-10-27 | 惠州Tcl移动通信有限公司 | SIM card pull-out prompting method, mobile terminal and storage medium |
| CN111541803B (en) * | 2020-04-29 | 2021-11-23 | 维沃移动通信有限公司 | Electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2491974Y (en) * | 2001-07-27 | 2002-05-15 | 继创电子股份有限公司 | Improved switching card connector of memory card |
| US7357678B1 (en) * | 2006-10-25 | 2008-04-15 | Cheng Uei Precision Industry Co., Ltd. | SIM card connector |
| CN201185251Y (en) * | 2008-03-14 | 2009-01-21 | 富港电子（东莞）有限公司 | SIM card connector |
| CN201570621U (en) * | 2009-11-06 | 2010-09-01 | 富港电子（东莞）有限公司 | Sim card connector |
| CN203103578U (en) * | 2013-01-18 | 2013-07-31 | 步步高通信科技有限公司 | SIM card seat capable of saving space |
-
2014
- 2014-03-11 CN CN201410086186.7A patent/CN103840314B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2491974Y (en) * | 2001-07-27 | 2002-05-15 | 继创电子股份有限公司 | Improved switching card connector of memory card |
| US7357678B1 (en) * | 2006-10-25 | 2008-04-15 | Cheng Uei Precision Industry Co., Ltd. | SIM card connector |
| CN201185251Y (en) * | 2008-03-14 | 2009-01-21 | 富港电子（东莞）有限公司 | SIM card connector |
| CN201570621U (en) * | 2009-11-06 | 2010-09-01 | 富港电子（东莞）有限公司 | Sim card connector |
| CN203103578U (en) * | 2013-01-18 | 2013-07-31 | 步步高通信科技有限公司 | SIM card seat capable of saving space |
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| Publication number | Publication date |
|---|---|
| CN103840314A (en) | 2014-06-04 |
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Address after: Changan town in Guangdong province Dongguan 523860 usha Beach Road No. 18 Patentee after: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS Corp.,Ltd. Address before: Changan town in Guangdong province Dongguan 523860 usha Beach Road No. 18 Patentee before: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS Corp.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 |
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