CN103833365A - High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof - Google Patents

High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof Download PDF

Info

Publication number
CN103833365A
CN103833365A CN201210499270.2A CN201210499270A CN103833365A CN 103833365 A CN103833365 A CN 103833365A CN 201210499270 A CN201210499270 A CN 201210499270A CN 103833365 A CN103833365 A CN 103833365A
Authority
CN
China
Prior art keywords
silicon carbide
saving
hours
energy
carborundum plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201210499270.2A
Other languages
Chinese (zh)
Other versions
CN103833365B (en
Inventor
徐叶新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YIXING ZHONGCUN KILN PRODUCTS CO Ltd
Original Assignee
YIXING ZHONGCUN KILN PRODUCTS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YIXING ZHONGCUN KILN PRODUCTS CO Ltd filed Critical YIXING ZHONGCUN KILN PRODUCTS CO Ltd
Priority to CN201210499270.2A priority Critical patent/CN103833365B/en
Publication of CN103833365A publication Critical patent/CN103833365A/en
Application granted granted Critical
Publication of CN103833365B publication Critical patent/CN103833365B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses a high-temperature-resistant energy-saving silicon carbide plate and a preparation method thereof, belonging to the technical field of ceramic materials. The high-temperature-resistant energy-saving silicon carbide plate is prepared from the following components in percentage by weight: 20-40% of 3.0-1.0mm SiC particle, 10-205 of 1.0-0.5mm SiC particle, 5-15% of 0.5-0.088mm SiC particle, 15-25% of 0.088-0.003mm SiC fine powder, 5-10% of 0.003-0mm SiC micropowder, 5-10% of 0.088-0mm silicon micropowder, 1-5% of composite binder, 0.5-1.0% of composite antioxidant and 1-7% of water. The preparation method comprises the following steps: proportionally mixing the materials, forming, drying, firing, and spraying a high-temperature oxidation-resistant paint on the surface. The high-temperature-resistant silicon carbide plate has the advantages of high density, high compressive strength and folding strength, consumption reduction, energy saving, lower waste gas emission and waste reutilization.

Description

High-temperature resistant and energy-saving carborundum plate and preparation method thereof
Technical field
The invention belongs to technical field of ceramic material, relate to a kind of high-temperature resistant and energy-saving carborundum plate and preparation method thereof.
Background technology
The kiln of originally producing domestic ceramics, snitaryware is all the old-fashioned kiln that adopts coal or oil to burn till for fuel, load heavier fire resistant sagger or roasting plate for pottery, this mode of production energy consumption is large, discharge amount of exhaust gas is large, environmental pollution is serious, along with the continuous innovation of modernization Production of Ceramics kiln, originally the fire resistant sagger of use or roasting plate far from adapt to the needs of present Production of Ceramics, so we pass through for a long time repeatedly repetition test, have successfully produced a kind of high temperature resistant, energy-saving carborundum plate.
Summary of the invention
The object of the present invention is to provide a kind of high-temperature resistant and energy-saving carborundum plate and preparation method thereof, this preparation method has advantages of the energy consumption of reduction, save energy, minimizing discharge amount of exhaust gas and waste material recycling, can obtain by this preparation method that density is high, grating is reasonable, plate face evenly, the high-temperature resistant silicon carbide plate of compressive strength and High anti bending strength.
The present invention can be achieved through the following technical solutions:
A kind of high-temperature resistant and energy-saving carborundum plate, the component by following weight percentage:
Through batching, moulding, dry and burn till after make at surface spraying high temperature anti-oxidation coating.
Described high-temperature resistant and energy-saving carborundum plate, preferably by the component of following weight percentage:
Figure BDA0000249182612
Through batching, moulding, dry and burn till after make at surface spraying high temperature anti-oxidation coating.
Described combined binder is two or more bonding agent being re-dubbed in yttrium oxide, manganese oxide or zirconium white.
Described composite antioxidant is the antioxidant being re-dubbed by weight percentage 50~70% metallic silicon powers and 30~50% graphite carbons.
Described 0.088mm~0 silicon powder is import Norway 98-1D silicon powder.
Described high temperature anti-oxidation coating is made up of weight percentage 30~50% Alpha-alumina micro mists, 35~50% electrofused mullite micro mists, 10~15% kaolin, 1~8% Walocel MT 20.000PV external adding water 40~50%.
The present invention also provides a kind of preparation method of high-temperature resistant and energy-saving carborundum plate, comprises the following steps successively:
1), select materials: choose silicon carbide bulk raw material, be processed into five kinds of different-grain diameters and be distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), batching: weigh according to above-mentioned formulation weight percentage composition, put into after the mixed stirring of mixer, ageing mixture 48 hours in encloses container, makes after the abundant reaction such as material additive, water, then mix by mixer, obtains silicon carbide amyloplastid;
3), moulding: adopt vibratory compaction pressing machine to be pressed to silicon carbide amyloplastid, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), secondary drying method is dry: first silicon carbide biscuit is dried 5 days at the drying room of 35~50oC, relative humidity 40~55, then 200~250 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), burn till: dried silicon carbide biscuit is placed in to the full-automatic refractory slab burning kiln of computer team control group and burns till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, and 500 DEG C are incubated 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 200 DEG C~300 DEG C of storing temperatures.。
Step 1) described silicon carbide bulk raw material, true density>=3.12g/cm 3, carborundum content (weight percentage)>=98.5%, free carbon content≤0.3%, Fe 2o 3content≤0.3%, iron alloy content 0.
Step 2) described mixer is 750 type forced action type planet mixers.
Step 3) described vibratory compaction pressing machine is two-sided pressurization and vibration pressing machine, and vibrational frequency is 2800 revs/min, and forming pressure is 1,000 thousand Ns.
Beneficial effect of the present invention:
1, the silicon carbide biscuit density that adopts the compression moulding of vibratory compaction pressing machine to obtain is high, grating is reasonable, and plate face is even, has improved compressive strength and folding strength;
2, adopt microwave drying, because microwave has penetration, silicon carbide biscuit is inside and outside simultaneously dry, and internal temperature, a little more than surface temperature, makes the outside pressure difference of the inner formation of silicon carbide biscuit, has accelerated the migration of moisture content, can reach evenly dry object;
3, adopt refractory slab kiln group and the full residual heat integrative that Sweet natural gas burns till to utilize power-saving technology, energy-saving and cost-reducing, reduce discharge amount of exhaust gas, the flue gas that calcining kiln is discharged is used for the dry of refractory slab base substrate as thermal source, realizes the energy and resource reutilization;
4, silicon carbide biscuit burns till and within the scope of differing temps, fully carries out chemical reaction, obtains the compressive strength of uniformity and the carborundum plate of folding strength;
5, carborundum plate surface spraying high temperature anti-oxidation coating, has effectively suppressed the oxidation of carborundum plate, has extended product life.
Embodiment
Below in conjunction with specific embodiment, preparation method of the present invention is described further.
Embodiment 1
1), choose true density 3.12g/cm 3, carborundum content (weight percentage) 99.4%, free carbon content 0.3%, Fe 2o 3the silicon carbide bulk raw material of content 0.3%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 25%, 1.0~0.5mm SiC particle 15%, 0.5~0.088mm SiC particle 10%, 0.088~0.003mm SiC fine powder 25%, 0.003mm~0 SiC micro mist 8%, ≤ 0.088mm silicon powder 8%, combined binder (being re-dubbed by weight percentage 60% yttrium oxide and 40% manganese oxide) 3%, composite antioxidant (being re-dubbed by weight percentage 50% metallic silicon power and 50% graphite carbon) 1%, water 5%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 35 DEG C, the drying room of relative humidity 40, then 200 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 200 DEG C of storing temperatures; Wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.75g/cm making 3, compressive strength 115 MPa, folding strength 60 MPa.
Embodiment 2
1) choose true density 3.21g/cm 3, carborundum content (weight percentage) 99.5%, free carbon content 0.3%, Fe 2o 3the silicon carbide bulk raw material of content 0.2%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 30%, 1.0~0.5mm SiC particle 10%, 0.5~0.088mm SiC particle 5%, 0.088~0.003mm SiC fine powder 22.5%, 0.003mm~0 SiC micro mist 10%, 0.088mm~0 silicon powder 10%, combined binder (being re-dubbed by weight percentage 50% yttrium oxide and 50% zirconium white) 5%, composite antioxidant (being re-dubbed by weight percentage 50% metallic silicon power and 50% graphite carbon) 0.5%, water 7%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 40 DEG C, the drying room of relative humidity 50, then 230 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 250 DEG C of storing temperatures, wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.76g/cm making 3, compressive strength 117 MPa, folding strength 58.5 MPa.
Embodiment 3
1), choose true density 3.15g/cm 3, carborundum content (weight percentage) 99.6%, free carbon content 0.2%, Fe 2o 3the silicon carbide bulk raw material of content 0.2%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 31.2%, 1.0~0.5mm SiC particle 17%, 0.5~0.088mm SiC particle 15%, 0.088~0.003mm SiC fine powder 20%, 0.003mm~0 SiC micro mist 5%, 0.088mm~0 silicon powder 5%, combined binder is (by weight percentage 33.3% yttrium oxide, 33.3% zirconium white and 33.4% manganese oxide are re-dubbed) 4%, composite antioxidant (being made by weight percentage 50% metallic silicon power and 50% graphite carbon) 0.8%, water 2%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 46 DEG C, the drying room of relative humidity 45, then 250 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 275 DEG C of storing temperatures, wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.78g/cm making 3, compressive strength 118 MPa, folding strength 58 MPa.
Embodiment 4
1), choose true density 3.18g/cm 3, carborundum content (weight percentage) 99.7%, free carbon content 0.2%, Fe 2o 3the silicon carbide bulk raw material of content 0.1%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 34%, 1.0~0.5mm SiC particle 16%, 0.5~0.088mm SiC particle 12%, 0.088~0.003mm SiC fine powder 15%, 0.003mm~0 SiC micro mist 7%, 0.088mm~0 silicon powder 8%, combined binder (being re-dubbed by weight percentage 40% zirconium white and 60% manganese oxide) 2%, composite antioxidant (being made by weight percentage 67% metallic silicon power and 33% graphite carbon) 1%, water 5%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 50 DEG C, the drying room of relative humidity 55, then 240 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 300 DEG C of storing temperatures, wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.75g/cm making 3, compressive strength 118 MPa, folding strength 55 MPa.

Claims (9)

1. a high-temperature resistant and energy-saving carborundum plate, is characterized in that the component by following weight percentage:
Figure FDA0000249182601
Through batching, moulding, dry and burn till after make at surface spraying high temperature anti-oxidation coating.
2. high-temperature resistant and energy-saving carborundum plate according to claim 1, is characterized in that the component by following weight percentage:
Figure FDA0000249182602
Through batching, moulding, dry and burn till after make at surface spraying high temperature anti-oxidation coating.
3. high-temperature resistant and energy-saving carborundum plate according to claim 1 and 2, is characterized in that described combined binder is two or more bonding agent being re-dubbed in yttrium oxide, manganese oxide or zirconium white.
4. high-temperature resistant and energy-saving carborundum plate according to claim 1 and 2, is characterized in that described composite antioxidant is the antioxidant being re-dubbed by weight percentage 50~70% metallic silicon powers and 30~50% graphite carbons.
5. high-temperature resistant and energy-saving carborundum plate according to claim 1 and 2, the high temperature anti-oxidation coating described in it is characterized in that is made up of weight percentage 30~50% Alpha-alumina micro mists, 35~50% electrofused mullite micro mists, 10~15% kaolin, 1~8% Walocel MT 20.000PV external adding water 40~50%.
6. the preparation method of high-temperature resistant and energy-saving carborundum plate claimed in claim 1, is characterized in that comprising the following steps successively:
1), select materials: choose silicon carbide bulk raw material, be processed into five kinds of different-grain diameters and be distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), batching: weigh according to above-mentioned formulation weight percentage composition, put into after the mixed stirring of mixer, ageing mixture 48 hours in encloses container, makes after the abundant reaction such as material additive, water, then mix by mixer, obtains silicon carbide amyloplastid;
3), moulding: adopt vibratory compaction pressing machine to be pressed to silicon carbide amyloplastid, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), secondary drying method is dry: first silicon carbide biscuit is dried 5 days at the drying room of 35~50oC, relative humidity 40~55, then 200~250 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), burn till: dried silicon carbide biscuit is placed in to the full-automatic refractory slab burning kiln of computer team control group and burns till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, and 500 DEG C are incubated 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 200 DEG C~300 DEG C of storing temperatures.
7. the preparation method of high-temperature resistant and energy-saving carborundum plate according to claim 6, is characterized in that step 1) described silicon carbide bulk raw material, true density>=3.12g/cm 3, carborundum content (weight percentage)>=98.5%, free carbon content≤0.3%, Fe 2o 3content≤0.3%, iron alloy content 0.
8. the preparation method of high-temperature resistant and energy-saving carborundum plate according to claim 6, is characterized in that step 2) described mixer is 750 type forced action type planet mixers.
9. the preparation method of high-temperature resistant and energy-saving carborundum plate according to claim 6, is characterized in that step 3) described vibratory compaction pressing machine is two-sided pressurization and vibration pressing machine, and vibrational frequency is 2800 revs/min, and forming pressure is 1,000 thousand Ns.
CN201210499270.2A 2012-11-29 2012-11-29 High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof Active CN103833365B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210499270.2A CN103833365B (en) 2012-11-29 2012-11-29 High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210499270.2A CN103833365B (en) 2012-11-29 2012-11-29 High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103833365A true CN103833365A (en) 2014-06-04
CN103833365B CN103833365B (en) 2015-04-22

Family

ID=50797310

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210499270.2A Active CN103833365B (en) 2012-11-29 2012-11-29 High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103833365B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104557049A (en) * 2015-01-22 2015-04-29 台州东新密封有限公司 Preparation method of extrusion-molded closed end reaction sintered silicon carbide ceramic pipe
CN105130440A (en) * 2015-07-09 2015-12-09 浙江长兴银兴窑业有限公司 Anti-oxidation silicon carbide deck and production method thereof
CN105130439A (en) * 2015-07-09 2015-12-09 浙江长兴银兴窑业有限公司 High strength silicon carbide deck and production method thereof
CN106187197A (en) * 2016-07-04 2016-12-07 浙江宇清热工科技股份有限公司 Carborundum plate goods and processing method thereof
CN107162575A (en) * 2017-06-05 2017-09-15 长兴华悦耐火材料厂 A kind of preparation method of high-temperature crucible
CN107176827A (en) * 2017-06-05 2017-09-19 长兴华悦耐火材料厂 One kind prepares crucible refractory material powder
CN107324817A (en) * 2017-06-05 2017-11-07 长兴华悦耐火材料厂 A kind of high-temperature crucible
CN113185298A (en) * 2021-04-16 2021-07-30 贵阳联合高温材料有限公司 Microporous high-thermal-conductivity SiC-based connection and cladding lining product and preparation method and application thereof
CN114085081A (en) * 2021-10-27 2022-02-25 南通三责精密陶瓷有限公司 Silicon carbide kiln furniture and manufacturing method thereof
CN114315362A (en) * 2022-01-10 2022-04-12 松山湖材料实验室 Heat exchanger, ceramic, and preparation method and application thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1169708A (en) * 1994-02-25 1998-01-07 摩根坩埚有限公司 Selfsintered silicon carbide/carbon composite material
DE19740772C2 (en) * 1997-09-17 1999-11-18 Ceramtec Ag SiC engobe for coating silicate-ceramic materials, its use and process for coating silicate-ceramic components
WO2002020426A1 (en) * 2000-09-04 2002-03-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Open-celled silicon carbide foam ceramic and method for production thereof
CN2617571Y (en) * 2003-05-08 2004-05-26 安徽省宁国市耐火建筑材料有限公司 Composite silicon carbide board
TWI314923B (en) * 2005-05-23 2009-09-21

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1169708A (en) * 1994-02-25 1998-01-07 摩根坩埚有限公司 Selfsintered silicon carbide/carbon composite material
DE19740772C2 (en) * 1997-09-17 1999-11-18 Ceramtec Ag SiC engobe for coating silicate-ceramic materials, its use and process for coating silicate-ceramic components
WO2002020426A1 (en) * 2000-09-04 2002-03-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Open-celled silicon carbide foam ceramic and method for production thereof
CN2617571Y (en) * 2003-05-08 2004-05-26 安徽省宁国市耐火建筑材料有限公司 Composite silicon carbide board
TWI314923B (en) * 2005-05-23 2009-09-21

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104557049A (en) * 2015-01-22 2015-04-29 台州东新密封有限公司 Preparation method of extrusion-molded closed end reaction sintered silicon carbide ceramic pipe
CN104557049B (en) * 2015-01-22 2017-01-11 台州东新密封有限公司 Preparation method of extrusion-molded closed end reaction sintered silicon carbide ceramic pipe
CN105130440A (en) * 2015-07-09 2015-12-09 浙江长兴银兴窑业有限公司 Anti-oxidation silicon carbide deck and production method thereof
CN105130439A (en) * 2015-07-09 2015-12-09 浙江长兴银兴窑业有限公司 High strength silicon carbide deck and production method thereof
CN106187197A (en) * 2016-07-04 2016-12-07 浙江宇清热工科技股份有限公司 Carborundum plate goods and processing method thereof
CN106187197B (en) * 2016-07-04 2018-08-14 浙江宇清热工科技股份有限公司 Carborundum plate product and its processing method
CN107176827A (en) * 2017-06-05 2017-09-19 长兴华悦耐火材料厂 One kind prepares crucible refractory material powder
CN107324817A (en) * 2017-06-05 2017-11-07 长兴华悦耐火材料厂 A kind of high-temperature crucible
CN107162575A (en) * 2017-06-05 2017-09-15 长兴华悦耐火材料厂 A kind of preparation method of high-temperature crucible
CN113185298A (en) * 2021-04-16 2021-07-30 贵阳联合高温材料有限公司 Microporous high-thermal-conductivity SiC-based connection and cladding lining product and preparation method and application thereof
CN113185298B (en) * 2021-04-16 2023-02-07 贵阳联合高温材料有限公司 Microporous high-thermal-conductivity SiC-based connection and cladding lining product and preparation method and application thereof
CN114085081A (en) * 2021-10-27 2022-02-25 南通三责精密陶瓷有限公司 Silicon carbide kiln furniture and manufacturing method thereof
CN114315362A (en) * 2022-01-10 2022-04-12 松山湖材料实验室 Heat exchanger, ceramic, and preparation method and application thereof
CN114315362B (en) * 2022-01-10 2023-02-17 松山湖材料实验室 Heat exchanger, ceramic, and preparation method and application thereof

Also Published As

Publication number Publication date
CN103833365B (en) 2015-04-22

Similar Documents

Publication Publication Date Title
CN103833365B (en) High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof
CN101328073B (en) Self-reinforcing type ceramic fibre pouring material and preparation thereof
CN101481255B (en) High-heat resistance shock resistant mullite bearing burning plate and preparation thereof
CN106747509B (en) A kind of ladle wall carbon-free pressed machine brick and preparation method thereof
CN103204684A (en) Chromium zirconium corundum mullite brick suitable for burning of waste liquid and wastes of petrochemical industry
CN105622122B (en) A kind of ultra micro kyanite refractory casting and its application
CN104496503B (en) A kind of Rapid-Repair refractory material and its preparation and application method
CN101591187A (en) High strength silicon nitride combined silicon carbide material and preparation method thereof
CN104844233A (en) Special fire-proof material for combustion furnace and preparation method thereof
CN104072175A (en) Lint clay brick for cement kiln calciner and preparation method thereof
CN106588059A (en) Prefabricated member for lime rotary kiln and preparation method of prefabricated member
CN107311634A (en) A kind of nitride bonded sandwich setter plate and preparation method thereof
CN108395218A (en) A kind of low carbon magnesia carbon brick and preparation method thereof prepared using modified magnesia
CN109503182A (en) It is a kind of without siliceous gasification furnace dedicated pouring material and preparation method thereof
CN101423412A (en) Method for preparing high performance silicon oxide combining silicon carbide refractory by low-temperature sintering
CN104446459B (en) Preparation method for the Bubble zirconia insulating product of tungsten sintering intermediate frequency furnace
CN110204346A (en) A kind of preparation method of mullite crystal whisker enhancing high alumina castable firing prefabricated section
CN101811882A (en) Composite bauxite-silicon nitride wear-resistant brick for large cement kiln and production method thereof
CN103360092B (en) Preparation method for silicon carbide refractory material for cremator
CN102503472B (en) SiC (silicon carbide)-toughened corundum prefabricated part by means of in-situ formation and preparation method for same
CN105152663B (en) A kind of preparation method of silicon nitride bonded silicon ferro-silicon nitride material
CN103833382A (en) Environment-friendly refractory castable used for vacuum refining furnaces, and preparation method thereof
CN102887713A (en) Low-thermal conductivity silicon carbide-mullite brick and preparation method thereof
CN103044037A (en) Mullite aluminum nitride prefabricated brick formed by nitriding sintering
CN102731124B (en) Flint clay brick with acid and alkali resistance, wear resistance and thermal shock resistance as well as preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant