CN103833365A - High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof - Google Patents
High-temperature-resistant energy-saving silicon carbide plate and preparation method thereof Download PDFInfo
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- CN103833365A CN103833365A CN201210499270.2A CN201210499270A CN103833365A CN 103833365 A CN103833365 A CN 103833365A CN 201210499270 A CN201210499270 A CN 201210499270A CN 103833365 A CN103833365 A CN 103833365A
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Abstract
The invention discloses a high-temperature-resistant energy-saving silicon carbide plate and a preparation method thereof, belonging to the technical field of ceramic materials. The high-temperature-resistant energy-saving silicon carbide plate is prepared from the following components in percentage by weight: 20-40% of 3.0-1.0mm SiC particle, 10-205 of 1.0-0.5mm SiC particle, 5-15% of 0.5-0.088mm SiC particle, 15-25% of 0.088-0.003mm SiC fine powder, 5-10% of 0.003-0mm SiC micropowder, 5-10% of 0.088-0mm silicon micropowder, 1-5% of composite binder, 0.5-1.0% of composite antioxidant and 1-7% of water. The preparation method comprises the following steps: proportionally mixing the materials, forming, drying, firing, and spraying a high-temperature oxidation-resistant paint on the surface. The high-temperature-resistant silicon carbide plate has the advantages of high density, high compressive strength and folding strength, consumption reduction, energy saving, lower waste gas emission and waste reutilization.
Description
Technical field
The invention belongs to technical field of ceramic material, relate to a kind of high-temperature resistant and energy-saving carborundum plate and preparation method thereof.
Background technology
The kiln of originally producing domestic ceramics, snitaryware is all the old-fashioned kiln that adopts coal or oil to burn till for fuel, load heavier fire resistant sagger or roasting plate for pottery, this mode of production energy consumption is large, discharge amount of exhaust gas is large, environmental pollution is serious, along with the continuous innovation of modernization Production of Ceramics kiln, originally the fire resistant sagger of use or roasting plate far from adapt to the needs of present Production of Ceramics, so we pass through for a long time repeatedly repetition test, have successfully produced a kind of high temperature resistant, energy-saving carborundum plate.
Summary of the invention
The object of the present invention is to provide a kind of high-temperature resistant and energy-saving carborundum plate and preparation method thereof, this preparation method has advantages of the energy consumption of reduction, save energy, minimizing discharge amount of exhaust gas and waste material recycling, can obtain by this preparation method that density is high, grating is reasonable, plate face evenly, the high-temperature resistant silicon carbide plate of compressive strength and High anti bending strength.
The present invention can be achieved through the following technical solutions:
A kind of high-temperature resistant and energy-saving carborundum plate, the component by following weight percentage:
Through batching, moulding, dry and burn till after make at surface spraying high temperature anti-oxidation coating.
Described high-temperature resistant and energy-saving carborundum plate, preferably by the component of following weight percentage:
Through batching, moulding, dry and burn till after make at surface spraying high temperature anti-oxidation coating.
Described combined binder is two or more bonding agent being re-dubbed in yttrium oxide, manganese oxide or zirconium white.
Described composite antioxidant is the antioxidant being re-dubbed by weight percentage 50~70% metallic silicon powers and 30~50% graphite carbons.
Described 0.088mm~0 silicon powder is import Norway 98-1D silicon powder.
Described high temperature anti-oxidation coating is made up of weight percentage 30~50% Alpha-alumina micro mists, 35~50% electrofused mullite micro mists, 10~15% kaolin, 1~8% Walocel MT 20.000PV external adding water 40~50%.
The present invention also provides a kind of preparation method of high-temperature resistant and energy-saving carborundum plate, comprises the following steps successively:
1), select materials: choose silicon carbide bulk raw material, be processed into five kinds of different-grain diameters and be distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), batching: weigh according to above-mentioned formulation weight percentage composition, put into after the mixed stirring of mixer, ageing mixture 48 hours in encloses container, makes after the abundant reaction such as material additive, water, then mix by mixer, obtains silicon carbide amyloplastid;
3), moulding: adopt vibratory compaction pressing machine to be pressed to silicon carbide amyloplastid, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), secondary drying method is dry: first silicon carbide biscuit is dried 5 days at the drying room of 35~50oC, relative humidity 40~55, then 200~250 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), burn till: dried silicon carbide biscuit is placed in to the full-automatic refractory slab burning kiln of computer team control group and burns till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, and 500 DEG C are incubated 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 200 DEG C~300 DEG C of storing temperatures.。
Step 1) described silicon carbide bulk raw material, true density>=3.12g/cm
3, carborundum content (weight percentage)>=98.5%, free carbon content≤0.3%, Fe
2o
3content≤0.3%, iron alloy content 0.
Step 2) described mixer is 750 type forced action type planet mixers.
Step 3) described vibratory compaction pressing machine is two-sided pressurization and vibration pressing machine, and vibrational frequency is 2800 revs/min, and forming pressure is 1,000 thousand Ns.
Beneficial effect of the present invention:
1, the silicon carbide biscuit density that adopts the compression moulding of vibratory compaction pressing machine to obtain is high, grating is reasonable, and plate face is even, has improved compressive strength and folding strength;
2, adopt microwave drying, because microwave has penetration, silicon carbide biscuit is inside and outside simultaneously dry, and internal temperature, a little more than surface temperature, makes the outside pressure difference of the inner formation of silicon carbide biscuit, has accelerated the migration of moisture content, can reach evenly dry object;
3, adopt refractory slab kiln group and the full residual heat integrative that Sweet natural gas burns till to utilize power-saving technology, energy-saving and cost-reducing, reduce discharge amount of exhaust gas, the flue gas that calcining kiln is discharged is used for the dry of refractory slab base substrate as thermal source, realizes the energy and resource reutilization;
4, silicon carbide biscuit burns till and within the scope of differing temps, fully carries out chemical reaction, obtains the compressive strength of uniformity and the carborundum plate of folding strength;
5, carborundum plate surface spraying high temperature anti-oxidation coating, has effectively suppressed the oxidation of carborundum plate, has extended product life.
Embodiment
Below in conjunction with specific embodiment, preparation method of the present invention is described further.
Embodiment 1
1), choose true density 3.12g/cm
3, carborundum content (weight percentage) 99.4%, free carbon content 0.3%, Fe
2o
3the silicon carbide bulk raw material of content 0.3%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 25%, 1.0~0.5mm SiC particle 15%, 0.5~0.088mm SiC particle 10%, 0.088~0.003mm SiC fine powder 25%, 0.003mm~0 SiC micro mist 8%, ≤ 0.088mm silicon powder 8%, combined binder (being re-dubbed by weight percentage 60% yttrium oxide and 40% manganese oxide) 3%, composite antioxidant (being re-dubbed by weight percentage 50% metallic silicon power and 50% graphite carbon) 1%, water 5%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 35 DEG C, the drying room of relative humidity 40, then 200 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 200 DEG C of storing temperatures; Wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.75g/cm making
3, compressive strength 115 MPa, folding strength 60 MPa.
Embodiment 2
1) choose true density 3.21g/cm
3, carborundum content (weight percentage) 99.5%, free carbon content 0.3%, Fe
2o
3the silicon carbide bulk raw material of content 0.2%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 30%, 1.0~0.5mm SiC particle 10%, 0.5~0.088mm SiC particle 5%, 0.088~0.003mm SiC fine powder 22.5%, 0.003mm~0 SiC micro mist 10%, 0.088mm~0 silicon powder 10%, combined binder (being re-dubbed by weight percentage 50% yttrium oxide and 50% zirconium white) 5%, composite antioxidant (being re-dubbed by weight percentage 50% metallic silicon power and 50% graphite carbon) 0.5%, water 7%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 40 DEG C, the drying room of relative humidity 50, then 230 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 250 DEG C of storing temperatures, wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.76g/cm making
3, compressive strength 117 MPa, folding strength 58.5 MPa.
Embodiment 3
1), choose true density 3.15g/cm
3, carborundum content (weight percentage) 99.6%, free carbon content 0.2%, Fe
2o
3the silicon carbide bulk raw material of content 0.2%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 31.2%, 1.0~0.5mm SiC particle 17%, 0.5~0.088mm SiC particle 15%, 0.088~0.003mm SiC fine powder 20%, 0.003mm~0 SiC micro mist 5%, 0.088mm~0 silicon powder 5%, combined binder is (by weight percentage 33.3% yttrium oxide, 33.3% zirconium white and 33.4% manganese oxide are re-dubbed) 4%, composite antioxidant (being made by weight percentage 50% metallic silicon power and 50% graphite carbon) 0.8%, water 2%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 46 DEG C, the drying room of relative humidity 45, then 250 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 275 DEG C of storing temperatures, wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.78g/cm making
3, compressive strength 118 MPa, folding strength 58 MPa.
Embodiment 4
1), choose true density 3.18g/cm
3, carborundum content (weight percentage) 99.7%, free carbon content 0.2%, Fe
2o
3the silicon carbide bulk raw material of content 0.1%, is processed into five kinds of different-grain diameters and is distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), weigh proportioning according to weight percentage: 3.0~1.0mm SiC particle 34%, 1.0~0.5mm SiC particle 16%, 0.5~0.088mm SiC particle 12%, 0.088~0.003mm SiC fine powder 15%, 0.003mm~0 SiC micro mist 7%, 0.088mm~0 silicon powder 8%, combined binder (being re-dubbed by weight percentage 40% zirconium white and 60% manganese oxide) 2%, composite antioxidant (being made by weight percentage 67% metallic silicon power and 33% graphite carbon) 1%, water 5%, put into after the mixed stirring of 750 type forced action type planet mixers, ageing mixture 48 hours in encloses container, make material additive, after water etc. fully react, mixed by 750 type forced action type planet mixers again, obtain silicon carbide amyloplastid,
3), adopt two-sided pressurization and vibration pressing machine to be pressed to silicon carbide amyloplastid, vibrational frequency is 2800 revs/min, forming pressure is 1,000 thousand Ns, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), silicon carbide biscuit is first dry 5 days of 50 DEG C, the drying room of relative humidity 55, then 240 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), dried silicon carbide biscuit be placed in to the full-automatic refractory slab burning kiln of computer team control group burn till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, 500 DEG C of insulations 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 300 DEG C of storing temperatures, wherein high temperature anti-oxidation coating is made by weight percentage 35% Alpha-alumina micro mist, 45% electrofused mullite micro mist, 15% kaolin, additional 40% water of 5% Walocel MT 20.000PV.
The high-temperature resistant and energy-saving carborundum plate density 2.75g/cm making
3, compressive strength 118 MPa, folding strength 55 MPa.
Claims (9)
3. high-temperature resistant and energy-saving carborundum plate according to claim 1 and 2, is characterized in that described combined binder is two or more bonding agent being re-dubbed in yttrium oxide, manganese oxide or zirconium white.
4. high-temperature resistant and energy-saving carborundum plate according to claim 1 and 2, is characterized in that described composite antioxidant is the antioxidant being re-dubbed by weight percentage 50~70% metallic silicon powers and 30~50% graphite carbons.
5. high-temperature resistant and energy-saving carborundum plate according to claim 1 and 2, the high temperature anti-oxidation coating described in it is characterized in that is made up of weight percentage 30~50% Alpha-alumina micro mists, 35~50% electrofused mullite micro mists, 10~15% kaolin, 1~8% Walocel MT 20.000PV external adding water 40~50%.
6. the preparation method of high-temperature resistant and energy-saving carborundum plate claimed in claim 1, is characterized in that comprising the following steps successively:
1), select materials: choose silicon carbide bulk raw material, be processed into five kinds of different-grain diameters and be distributed as the silicon-carbide particle of 3.0~1.0mm, 1.0~0.5mm, 0.5~0.088mm, 0.088~0.003mm, 0.003mm~0;
2), batching: weigh according to above-mentioned formulation weight percentage composition, put into after the mixed stirring of mixer, ageing mixture 48 hours in encloses container, makes after the abundant reaction such as material additive, water, then mix by mixer, obtains silicon carbide amyloplastid;
3), moulding: adopt vibratory compaction pressing machine to be pressed to silicon carbide amyloplastid, obtain that density is high, grating rationally, the uniform silicon carbide biscuit of plate face;
4), secondary drying method is dry: first silicon carbide biscuit is dried 5 days at the drying room of 35~50oC, relative humidity 40~55, then 200~250 DEG C of microwave tunnel drying kilns microwave drying 30 minutes;
5), burn till: dried silicon carbide biscuit is placed in to the full-automatic refractory slab burning kiln of computer team control group and burns till, firing temperature and time are as follows: 50 DEG C → 500 DEG C constant gradients heat up 20 hours, and 500 DEG C are incubated 5 hours; 500 DEG C → 1000 DEG C constant gradients heat up 10 hours, and 1000 DEG C are incubated 10 hours; 1000 DEG C → 1300 DEG C constant gradients heat up 12 hours, and 1300 DEG C → 1600 DEG C constant gradients heat up 15 hours, and 1600 DEG C are incubated 10 hours, obtain carborundum plate;
6), spraying: at carborundum plate surface spraying high temperature anti-oxidation coating, thickness 0.3mm, 200 DEG C~300 DEG C of storing temperatures.
7. the preparation method of high-temperature resistant and energy-saving carborundum plate according to claim 6, is characterized in that step 1) described silicon carbide bulk raw material, true density>=3.12g/cm
3, carborundum content (weight percentage)>=98.5%, free carbon content≤0.3%, Fe
2o
3content≤0.3%, iron alloy content 0.
8. the preparation method of high-temperature resistant and energy-saving carborundum plate according to claim 6, is characterized in that step 2) described mixer is 750 type forced action type planet mixers.
9. the preparation method of high-temperature resistant and energy-saving carborundum plate according to claim 6, is characterized in that step 3) described vibratory compaction pressing machine is two-sided pressurization and vibration pressing machine, and vibrational frequency is 2800 revs/min, and forming pressure is 1,000 thousand Ns.
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CN107176827A (en) * | 2017-06-05 | 2017-09-19 | 长兴华悦耐火材料厂 | One kind prepares crucible refractory material powder |
CN107324817A (en) * | 2017-06-05 | 2017-11-07 | 长兴华悦耐火材料厂 | A kind of high-temperature crucible |
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CN114315362A (en) * | 2022-01-10 | 2022-04-12 | 松山湖材料实验室 | Heat exchanger, ceramic, and preparation method and application thereof |
CN114315362B (en) * | 2022-01-10 | 2023-02-17 | 松山湖材料实验室 | Heat exchanger, ceramic, and preparation method and application thereof |
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