CN103825196B - A kind of two-dimentional silicon based photon crystal micro-nano waveguide laser - Google Patents
A kind of two-dimentional silicon based photon crystal micro-nano waveguide laser Download PDFInfo
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Abstract
The invention belongs to optical lasers equipment technical field, relate to a kind of two-dimentional silicon based photon crystal micro-nano waveguide laser; Pumping source, coupled system, dichroic mirror, two-dimentional silicon based photon crystal structure and dichroscope are placed composition laser instrument successively; Wherein, two dimension silicon based photon crystal structure comprises that two dimension is silica-based, coupled zone scattering unit, coupled zone scattering unit gap, coupled zone waveguide, lasing region scattering unit, lasing region scattering unit gap, coupled wave guide cavity, the stroma ground substance that contains laser active ion, transmission range waveguide, transmission range scattering unit and transmission range scattering unit gap, is divided into successively coupled zone, lasing region and transmission range; It is simple in structure, and principle is reliable, and volume is little, and threshold value is low, and stability is high, and cost is low, operates nimblely, and coupling and the efficiency of transmission of light are high.
Description
Technical field:
The invention belongs to optical lasers equipment technical field, relate to a kind of New-type photon crystal laser instrument, particularlyA kind of wavelength is at 1030nm, Yb3+For laser active ion, low-loss two-dimentional silicon based photon crystal micro-nano rippleLead laser instrument.
Background technology:
At present, laser instrument, particularly solid state laser the basic optical neck such as show in optic communication, optical storage and light displayTerritory, and the hi-tech industry such as radar system, biotechnology and medicine equipment has important application, along with science and technologyDevelopment, laser constantly expands in the range of application in these fields, has advanced the utmost point of laser instrument technology of preparingGreat development, solid state laser mainly contains lamp light-pumped solid state laser, diode pumping solid laser, laser pumpPumping solid laser and optical fiber laser etc., laser crystal material active ions used adopt more rare earth ion andTransition metal ions; Host crystal is more wide in range, can adopt oxide crystal, crystal of fluoride, oxysaltCrystal etc., but traditional solid state laser is very high to the requirement of crystalline material itself, are therefore also subject to crystalThe factors such as quality, processing, plated film, and the impact of the periphery factor such as transmission, heat radiation.
Nearly ten years, micro-nano laser developments is rapid, and first the U.S. produce zinc oxide (ZnO) room temperature ultravioletRadiation nano laser, other micro-nano structure laser instruments also arise at the historic moment, this class laser instrument to the quality of crystal andProcessing request is relatively lower; Only need the little energy just can Emission Lasers, and can work under normal temperature, efficiencyHigh and energy threshold is very low, can instant shut-in, size is little, is convenient to optics integrated, Just because of this,This type of laser developments is rapid, can be widely used in chemical substance and differentiate, biology sensor, microscopy and laserSurgery, and photometry is calculated, auto-control opens the light and the information storage such as laser integrated chip and accelerate information processing etc.A lot of aspects.
Photonic crystal is a kind of new material structure occurring over nearly twenties years, and it has forbidden band characteristic, photonThe feature such as local and low-loss transmission, can provide and be different from former Electromagnetic Wave Propagation and control method, photon crystalline substanceBody becomes the focus of the area researches such as domestic and international physics, chemistry, material, communication, and photonic crystal research not only existsTheoretical and manufacturing technology aspect has obtained a lot of important achievements, is led to by microwave at application aspect photonic crystalLetter, THz devices, to multi-field expansions such as photon chip, solar cell, bio-sensing and stealth technologies.Aspect solid state laser, the band gap effect of photonic crystal can improve reflectivity, and high Q value microcavity can reduceThreshold value, improves coupling gain, and photonic crystal can also be controlled transmission frequency, polarization and inhibition autoradiolysis etc., lightThese specific physical effects of sub-crystal, make photonic crystal start to be applied to semiconductor laser and optical-fiber laserDevice, and there is defect mode laser instrument, band edge Mode for Laser device, photon crystal reflecting mirror laser instrument and activeWaveguide cavity laser instrument etc., but at present, photon crystal laser mostly is InGaAsP, GaAs, AlGaAs and halfThe structure that the materials such as conductor oxide form, is subject to semiconductor laser material threshold value, energy band, monochromaticjty and radiationThe impact of the factors such as power; Research shows: three rank rare earth ion Yb3+Become the Nd that continues3+Most important sharp afterwardsPhotolytic activity ion, because it has the simplest level structure, only has2F5/2With2F7/2Two energy states, avoid sharpMany detrimental effects in light emission process, if by Yb3+Active ion is doped to photon crystal micro cavity, and makesPhoton crystal structure in coupled zone, excitation source region and transmission range combine, and utilizes photonic crystal band spyProperty modulating action to photon state, can break through the performance bottleneck of conventional laser, not only obtain higher spontaneousThe efficiency of radiation, and can obtain than conventional laser active micro-nano structure more flexibly, excitation source region improvedGain, realize laser instrument without threshold value work and single mode low-loss, high power transmission; Photonic crystal micro-nano rippleLead laser instrument can also implementation structure volume little, be convenient to integrated, transmission direction and the advantage such as light splitting is flexible, at presentYb3+Have the research in optical fiber laser, but there is not yet with Yb3+Deng be laser active ion, collection couplingThe photonic crystal micro-nano waveguide laser that closes, excites and be transmitted as one occurs.
Summary of the invention:
The object of the invention is to overcome the shortcoming that prior art exists, seek to design one and be convenient to integrated and processingNew Two Dimensional silicon based photon crystal micro-nano waveguide laser, by forbidden band characteristic, the slower rays characteristic etc. of photonic crystalFeature and Yb3+The advantage of active ion combines, and injects Yb in photon crystal micro cavity3+Active ion, passes throughBeing coupled, exciting and transmitting three processes organically combines.
To achieve these goals, the laser bodies structure the present invention relates to comprise pumping source, coupled system,Dichroic mirror, two-dimentional silicon based photon crystal structure and dichroscope, each parts are placed composition laser instrument successively; Wherein,Two dimension silicon based photon crystal structure comprises that two dimension is silica-based, coupled zone scattering unit, coupled zone scattering unit gap, couplingDistrict's waveguide, lasing region scattering unit, lasing region scattering unit gap, coupled wave guide cavity, contain laser active ionStroma ground substance, transmission range waveguide, transmission range scattering unit and transmission range scattering unit gap, be divided into successively coupled zone,Lasing region and transmission range; Coupled zone scattering unit, coupled zone scattering unit gap and coupled zone waveguide are arranged on two-dimentional siliconThe formation coupled zone, left side of base, the both sides of coupled zone are circular segment or oval-shaped coupled zone scattering unit, couplingBetween scattering unit of district, form coupled zone scattering unit gap; The intermediate structure of coupled zone, both sides scattering unit is coupled zone rippleLead, doubly, the forbidden band scope of coupled zone is that pumping source produces to the 1-2 that the width of coupled zone waveguide is lattice paprmeterPump light wavelength, makes pump light propagate along coupled zone waveguide, can not be to the coupled zone scattering unit diffusion of both sides;Lasing region scattering unit, lasing region scattering unit gap, coupled wave guide cavity and the stroma ground substance that contains laser active ionBe arranged on the silica-based middle part of two dimension and form lasing region, the both sides of lasing region are lasing region scattering unit, and centre isCoupler ripple, forms lasing region scattering unit gap between lasing region scattering unit; The forbidden band bandwidth of lasing region is laserThe wavelength of active ion Laser emission spectral line, coupled wave guide cavity is provided with 1～6, the shape of each coupled wave guide cavityShape is definite according to lattice shape, and the length of side of coupled wave guide cavity is the microcavity of n times of lattice paprmeter, or is length of side differenceFor doubly and (n+2) the rectangle microcavity of times lattice paprmeter of n, n is natural number; In coupled wave guide cavity, be filled with contain sharpThe stroma ground substance of photolytic activity ion, the stroma ground substance that contains laser active ion is oxide, fluoride or contains oxygenHydrochlorate material, comprises iridium aluminium stone Y3Al5G12(YAG), Yttrium Orthovanadate YVO4, silica (Silica) and siliconHydrochlorate (Silicate); Laser active ion is Yb3+、Nd3+Or Er3+Rare earth ion; Transmission range waveguide, biographyScattering unit of defeated district and transmission range scattering unit gap are arranged on the silica-based right side of two dimension and form transmission range, two of transmission rangeSide is transmission range scattering unit, and the size of transmission range scattering unit is identical with lasing region scattering unit, the forbidden band band of transmission rangeWide is the wavelength of laser active ion Laser emission spectral line; Between adjacent transmission range scattering unit, form transmission range loosePenetrate first gap; The centre of transmission range III is transmission range waveguide, and transmission range waveguide is provided with 1-5 branch-waveguide,To realize turning to and point beam function of laser, transmission range waveguide makes full use of the forbidden band characteristic of photonic crystal, makes to swashThe laser of sending out district's generation can only be in transmission range waveguide transmission, can not have to both sides the part diffusion of scattering unit; Two dimensionThe two-dimentional silicon chip that silica-based employing is commercially available or SOI material, the 1/5-2/3 that its working depth is silicon layer thickness; Pumping sourceFor diode-pumped laser or optical fiber laser; Coupled system, dichroic mirror and dichroscope are the commercially available of routineProduct.
Compared with prior art, it is simple in structure in the present invention, and principle is reliable, and volume is little, and threshold value is low, stabilityHeight, cost is low, operates nimblely, and coupling and the efficiency of transmission of light are high.
Brief description of the drawings:
Fig. 1 is agent structure building block principle schematic diagram of the present invention.
Fig. 2 is the structural principle schematic diagram of the two-dimentional silicon based photon crystal structure that the present invention relates to.
Fig. 3 is the Yb that the embodiment of the present invention relates to3+The absorption line of active ion, wherein transverse axis is wavelength,The longitudinal axis is absorption intensity.
Fig. 4 is Yb in the embodiment of the present invention 13+The exciting line of active ion, wherein transverse axis is wavelength; VerticalAxle is excitation intensity.
Fig. 5 is the coupled wave guide cavity number that the present invention relates to and the curve map of power output, and wherein transverse axis is couplingThe number of waveguide cavity; The longitudinal axis is light-light conversion efficiency.
Fig. 6 is the agent structure building block principle schematic diagram of the embodiment of the present invention 2.
Fig. 7 is the structural principle schematic diagram of the two-dimentional silicon based photon crystal structure that relates to of the embodiment of the present invention 2.
Fig. 8 is Yb in the embodiment of the present invention 23+The exciting line of active ion, wherein transverse axis is wavelength; VerticalAxle is excitation intensity.
Detailed description of the invention:
Also be described further by reference to the accompanying drawings below by embodiment.
The laser bodies structure that the present embodiment relates to comprises pumping source 1, coupled system 2, dichroic mirror 3, two dimensionSilicon based photon crystal structure 4 and dichroscope 5, each parts are placed composition laser instrument successively; Wherein, two dimension is silica-basedPhoton crystal structure 4 comprises that two dimension is silica-based 6, coupled zone scattering unit 7, coupled zone scattering unit gap 8, coupled zone rippleLead 9, lasing region scattering unit 10, lasing region scattering unit gap 11, coupled wave guide cavity 12, contain laser activity fromStroma ground substance 13, transmission range waveguide 14, transmission range scattering unit 15 and the transmission range scattering unit gap 16 of son, successivelyBe divided into coupled zone I, lasing region II and transmission range III; Coupled zone scattering unit 7, coupled zone scattering unit gap 8 and couplingDistrict's waveguide 9 is arranged on formation coupled zone, the left side I of two dimension silica-based 6, and the both sides of coupled zone I are circular segment or ellipseThe coupled zone scattering unit 7 of shape, forms coupled zone scattering unit gap 8 between coupled zone scattering unit 7; Coupled zone, both sidesThe intermediate structure of scattering unit 7 is coupled zone waveguide 9, the 1-2 that the width of coupled zone waveguide 9 is lattice paprmeter times, and couplingThe forbidden band scope of closing district I is the pump light wavelength that pumping source 1 produces, and pump light is propagated along coupled zone waveguide 9,Can not be to coupled zone scattering unit 7 diffusions of both sides; Lasing region scattering unit 10, lasing region scattering unit gap 11, couplingThe middle part that the stroma ground substance 13 that closes waveguide cavity 12 and contain laser active ion is arranged on two dimension silica-based 6 formsLasing region II, the both sides of lasing region II are lasing region scattering unit 10, centre is coupler ripple 12, lasing region scatteringBetween unit 10, form lasing region scattering unit gap 11; The forbidden band bandwidth of lasing region II is that laser active ion laser is sent outPenetrate the wavelength of spectral line, coupled wave guide cavity 12 is provided with 1～6, and the shape of each coupled wave guide cavity 12 is according to latticeShape determines, the length of side of coupled wave guide cavity 12 is the microcavity of n times of lattice paprmeter, or for the length of side be respectively n doubly with(n+2) the rectangle microcavity of times lattice paprmeter, n is natural number; In coupled wave guide cavity 12, be filled with and contain laser activityThe stroma ground substance 13 of ion, the stroma ground substance 13 that contains laser active ion is oxide, fluoride or oxyacidSalt material, comprises iridium aluminium stone Y3Al5G12(YAG), Yttrium Orthovanadate YVO4, silica (Silica) and silicic acidSalt (Silicate); Laser active ion is Yb3+、Nd3+Or Er3+Rare earth ion; Transmission range waveguide 14, biographyThe right side that scattering unit 15 of defeated district and transmission range scattering unit gap 16 are arranged on two dimension silica-based 6 forms transmission range III, passesThe both sides of defeated district III are transmission range scattering unit 15, the size of transmission range scattering unit 15 and lasing region scattering unit 10 phasesWith, the forbidden band bandwidth of transmission range III is the wavelength of laser active ion Laser emission spectral line; Adjacent transmission range is looseBetween penetrating first 15, form transmission range scattering unit gap 16; The centre of transmission range III is transmission range waveguide 14, transmission rangeWaveguide has been provided with 1-5 branch-waveguide, and to realize turning to and point beam function of laser, transmission range waveguide 14 is filledDivide the forbidden band characteristic of utilizing photonic crystal, the laser that lasing region II is produced can only transmit in transmission range waveguide 14,Can not there is to both sides the part diffusion of scattering unit; Two dimension silica-based 6 adopts commercially available two-dimentional silicon chip or SOI material,Its working depth is the 1/5-2/3 of silicon layer thickness; Pumping source 1 is diode-pumped laser or optical fiber laser;Coupled system 2, dichroic mirror 3 and dichroscope 5 are conventional commercially available prod.
Embodiment 1:
Coupled zone scattering unit 7, lasing region scattering unit 10 and transmission range scattering unit 15 that the present embodiment relates to areCircular segment scattering unit, laser active ion is Yb3+, it is the two-dimentional silicon of 500 μ m that two dimension silica-based 6 adopts thicknessSheet, the working depth of two dimension silica-based 6 other positions except scattering unit is 100 μ m, in circular segment scattering unitThe heart is all hexagonal array at silicon face, and lattice paprmeter a=580nm is constant, the centre-to-centre spacing of adjacent scattering unitFrom equaling lattice paprmeter a, two dimension silica-based 6 left end is coupled zone I, and pumping source 1 adopts with stationary rasterDiode-pumped laser, its operation wavelength is 980nm, the forbidden band centre wavelength of coupled zone I is 980nm,Determine that by plane wave expansion method the major axis of coupled zone scattering unit 7 and minor axis are respectively 220nm and 180nm, couplingClose scattering unit 7 of district less than lasing region scattering first 10 and transmission range scattering unit 15, therefore coupled zone scattering unit gap8 is larger than lasing region scattering unit gap 11 and transmission range scattering unit gap 16; For improving coupling efficiency, coupled zoneEight row coupled zone scattering units, the 7 symmetrical indentations of waveguide 9 both sides, totally do not destroy hexagon arrangement architecture; Two dimension siliconThe middle part of base 6 is lasing region II, due to Yb3+The excitation wavelength of active ion is at 1030nm, so lasing regionThe forbidden band centre wavelength of scattering unit 10 and transmission range scattering unit 15 composition structures is all near 1030nm, by putting downThe ground roll method of development can determine that the major axis of lasing region scattering unit 10 and minor axis are respectively 230nm and 185nm; SwashThe centre bit of sending out district II is equipped with three coupled wave guide cavities 12, and each coupled wave guide cavity 12, with middle axial symmetry, is sixLimit shape structure, the length of side is 2a, i.e. 1160nm; Implantation concentration is filled in the inside of each coupled wave guide cavity 12The Yb of 5.26at.%3+Active ion, matrix are iridium aluminium stone Y3Al5G12(YAG) contain laser active ionStroma ground substance 13; The right-hand member of two dimension silica-based 6 is transmission range III, the taboo of transmission range scattering unit 15 composition structuresBand centre wavelength is at 1030nm, and major axis and the minor axis of transmission range scattering unit 15 are respectively 230nm and 185nm;Eight row's transmission range scattering unit 15 symmetries of transmission range waveguide 14 both sides stretch to the right, totally do not destroy hexagon and arrangeStructure; Dichroic mirror 3 is dichroic mirrors of plated film HT980nm and HR1030nm; Dichroscope 5 isThe dichroic mirror of plated film HT1030nm and HR980nm, the light source process that diode pumping source 1 producesCoupled system 2 is inputted dichroic mirror 3, enters two-dimentional silicon based photon crystal waveguiding structure 4: first at the silica-based light of two dimensionThe coupled zone I coupling of sub-crystal waveguide structure, then enters lasing region II, by Yb3+Active ion absorbs, andExcite and constantly amplify and 1030nm laser, then by transmission range III directional transmissions, finally by dichroscope 5Output of laser, Fig. 3 is Yb3+The absorption line of active ion, its absworption peak is at 980nm as seen; Fig. 4 isYb in embodiment 13+The exciting line of active ion, its excitation peak is at 1030nm as seen; Fig. 5 is coupled waveThe curve of guide cavity number and power output, visible in the situation that only having a chamber, the conversion effect of light-luminous powerRate is 67%, and while having three chambeies, the conversion efficiency of light-luminous power can reach 80%, far above conventional laserLight-the light conversion efficiency of device, illustrates that this laser instrument output loss is very low and stable.
Embodiment 2:
The present embodiment is provided with two dichroscopes 5, the coupled zone scattering unit 7, the lasing region scattering unit 10 that relate toBe oval Square array scattering unit with transmission range scattering unit 15, laser active ion is Yb3+, two-dimentional siliconIt is the SOI material of 300 μ m that base 6 is selected commercially available silicon layer thickness, and two dimension silica-based 6 silicon layer is except scattering unitThe working depth of other positions is 100 μ m, and coupled zone scattering unit 7, lasing region scattering unit 10 and transmission range are loosePenetrate 15 the lattice paprmeter a=560nm of unit constant, the centre distance of adjacent scattering unit equals lattice paprmeter a, noThe scattering unit size of same district forbidden band wavelength as requested, is tried to achieve by plane wave expansion method; A left side for two dimension silica-based 6End is coupled zone I, the diode-pumped laser that pumping source 1 adopts with stationary raster, and its operation wavelength is980nm, the forbidden band centre wavelength of coupled zone I, at 980nm, is determined coupled zone scattering unit 7 by plane wave expansion methodMajor axis and minor axis be respectively 210nm and 168nm, coupled zone scattering unit 7 than lasing region scattering first 10 and passScattering unit 15 of defeated district is little, and therefore coupled zone scattering unit gap 8 is looser than the first gap 11 of lasing region scattering and transmission rangePenetrate first gap 16 large; For improving coupling efficiency, 7 pairs, eight row coupled zone scattering unit of coupled zone waveguide 9 both sidesClaim indentation, totally do not destroy the structure of Square array; ; The middle part of two dimension silica-based 6 is lasing region II, due to Yb3+The excitation wavelength of active ion is at 1030nm, so lasing region scattering unit 10 and transmission range scattering unit 15 compositionsThe forbidden band centre wavelength of structure all, near 1030nm, is determined lasing region scattering unit 10 by plane wave expansion methodMajor axis and minor axis be respectively 220nm and 176nm; The centre bit of lasing region II is equipped with three coupled wave guide cavities12, each coupled wave guide cavity 12, with middle axial symmetry, is tetragonal, and the length of side is 3a; Each coupled wave guide cavityThe Yb that implantation concentration is 5.56at.% is filled in 12 inside3+Active ion and matrix are that containing of silica is sharpThe stroma ground substance 13 of photolytic activity ion; The right-hand member of two dimension silica-based 6 is transmission range III, transmission range scattering unit 15Forbidden band centre wavelength at 1030nm, the major axis of transmission range scattering unit 15 and minor axis be respectively 220nm and176nm; Transmission range scattering unit 15 does not destroy Square array structure, does not stretch to the right symmetrically yet or receivesContracting, but transmission range waveguide 14 is divided into two waveguides of different directions, at energy hardly loss in the situation that,Not only change and swash direction of light, also play the effect of light splitting; Dichroic mirror 3 adopt plated film HT980nm andThe dichroic mirror of HR1030nm; Two two are plated film HT1030nm and HR980nm to mirror 5Dichroic mirror; The light source that pumping source 1 produces is inputted dichroic mirror 3 through coupled system 2, then enters two-dimentional silica-basedPhotonic crystal waveguide structure 4, first in the coupled zone of two-dimentional silicon based photon crystal waveguiding structure 4 I coupling, thenEnter lasing region II, by Yb3+Active ion absorbs, and excites and constantly amplify and 1030nm laser, thenBy transmission range III directional transmissions, and finally by two dichroscopes simultaneously to different directions Output of laser, Fig. 8For Yb in the present embodiment3+The exciting line of active ion, its excitation peak is also at 1030nm.
Claims (1)
1. a two-dimentional silicon based photon crystal micro-nano waveguide laser, is characterized in that, agent structure comprises pumping source, coupled system, dichroic mirror, two-dimentional silicon based photon crystal structure and dichroscope, and each parts are placed composition laser instrument successively; Wherein, two dimension silicon based photon crystal structure comprises that two dimension is silica-based, coupled zone scattering unit, coupled zone scattering unit gap, coupled zone waveguide, lasing region scattering unit, lasing region scattering unit gap, coupled wave guide cavity, the stroma ground substance that contains laser active ion, transmission range waveguide, transmission range scattering unit and transmission range scattering unit gap, is divided into successively coupled zone, lasing region and transmission range; Coupled zone scattering unit, coupled zone scattering unit gap and coupled zone waveguide are arranged on the silica-based formation coupled zone, left side of two dimension, and the both sides of coupled zone are circular segment or oval-shaped coupled zone scattering unit, form coupled zone scattering unit gap between the scattering unit of coupled zone; The intermediate structure of coupled zone, both sides scattering unit is coupled zone waveguide, the width of coupled zone waveguide is 1-2 times of lattice paprmeter, the forbidden band scope of coupled zone is the pump light wavelength that pumping source produces, and pump light is propagated along coupled zone waveguide, can not be to the coupled zone scattering unit diffusion of both sides; Lasing region scattering unit, lasing region scattering unit gap, coupled wave guide cavity and the stroma ground substance that contains laser active ion are arranged on the silica-based middle part of two dimension and form lasing region, the both sides of lasing region are lasing region scattering unit, centre is coupler ripple, forms lasing region scattering unit gap between lasing region scattering unit; The forbidden band bandwidth of lasing region is the wavelength of laser active ion Laser emission spectral line, coupled wave guide cavity is provided with 1～6, the shape of each coupled wave guide cavity is determined according to lattice shape, the length of side of coupled wave guide cavity is the microcavity of n times of lattice paprmeter, or for the length of side is respectively n doubly and the rectangle microcavity of n+2 times of lattice paprmeter, n is natural number; In coupled wave guide cavity, be filled with the stroma ground substance that contains laser active ion, the stroma ground substance that contains laser active ion is oxide, fluoride or oxysalt material, comprises iridium aluminium stone Y3Al5G12, Yttrium Orthovanadate, silica and silicate; Laser active ion is Yb3+、Nd3+Or Er3+Rare earth ion; Transmission range waveguide, transmission range scattering unit and transmission range scattering unit gap are arranged on the silica-based right side of two dimension and form transmission range, the both sides of transmission range are transmission range scattering unit, the size of transmission range scattering unit is identical with lasing region scattering unit, and the forbidden band bandwidth of transmission range is the wavelength of laser active ion Laser emission spectral line; Between adjacent transmission range scattering unit, form transmission range scattering unit gap; The centre of transmission range III is transmission range waveguide, transmission range waveguide is provided with 1-5 branch-waveguide, to realize turning to and point beam function of laser, transmission range waveguide makes full use of the forbidden band characteristic of photonic crystal, the laser that lasing region is produced can only be in transmission range waveguide transmission, can not have to both sides the part diffusion of scattering unit; Commercially available two-dimentional silicon chip or the SOI material of the silica-based employing of two dimension, the 1/5-2/3 that its working depth is silicon layer thickness; Pumping source is diode-pumped laser or optical fiber laser; Coupled system, dichroic mirror and dichroscope are conventional commercially available prod.
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| EP1933431A1 (en) * | 2005-09-05 | 2008-06-18 | Kyoto University | Two-dimensional photonic crystal surface light emitting laser light source |
| CN101771240A (en) * | 2009-12-30 | 2010-07-07 | 中国科学院半导体研究所 | Tunable photonic crystal edge-emitting laser and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1933431A1 (en) * | 2005-09-05 | 2008-06-18 | Kyoto University | Two-dimensional photonic crystal surface light emitting laser light source |
| CN101771240A (en) * | 2009-12-30 | 2010-07-07 | 中国科学院半导体研究所 | Tunable photonic crystal edge-emitting laser and manufacturing method thereof |
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| Title |
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| Electrically driven integrated photonic crystal nanocavity coupled surface emitting laser;Shih-Chieh Huang et al;《Applied Physics Letters》;20071231(第90期);第151121-1到151121-3页 * |
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