CN103812005A - Quantum well electroluminescent device - Google Patents
Quantum well electroluminescent device Download PDFInfo
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- CN103812005A CN103812005A CN201210442265.8A CN201210442265A CN103812005A CN 103812005 A CN103812005 A CN 103812005A CN 201210442265 A CN201210442265 A CN 201210442265A CN 103812005 A CN103812005 A CN 103812005A
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- layer
- quantum well
- pumping
- light emitting
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Abstract
The invention provides a quantum well electroluminescent device which comprises a semiconductor body (1) with surface emitting. The semiconductor body comprises a vertical emitter layer (3) and a pumping source (4) for the optical pumping of the vertical emitter layer (3). The pumping source (4) is provided with a pumping layer (5). A protection layer (19) is arranged between the pumping layer (5) and the vertical emitter layer (3). A distance between the pumping layer (5) and the vertical emitter layer (3) in a vertical direction is two times or three times of the thickness of the protection layer (19). A waveguide layer is arranged between the protection layer and the emitter layer. The waveguide layer (14) comprises aluminum-gallium -arsenide, and the aluminum concentration is about 2%to 4%.
Description
Technical field
The present invention relates to optical information processing technical field, be specifically related to a kind of quantum well el light emitting device, especially a kind of quantum-well semiconductor laser.
Background technology
Quantum well is by the different two kinds of layer material alternating growths of band gap width together, and narrow band gap thin layer by double team a kind of micro-structural in the middle of wide bandgap material.Wherein, the thickness of narrow band gap potential well layer is less than the Broglie of electronics (de Broglie) wavelength, and the energy level of electronics becomes discrete quantized level, and this micro-structural is quantum well.The essential characteristic of quantum well is, due to the restriction of quantum well width (only having when enough hour ability formation quantum well of the wide yardstick of trap), cause charge carrier wave function in one-dimensional square localization upwards, in quantum well because the thickness of active layer only in electron mean free path, trap wall has very strong restriction, make charge carrier only in the plane parallel with trap wall, there is two-dimensional freedom, in the vertical direction, make conduction band and valence band split into subband.
Quantum well el light emitting device is a kind of luminescent device that active area has quantum well structure, belongs to common light-emitting component, and especially quantum-well laser is widely used in the fields such as optical fiber communication, Fibre Optical Sensor, medical detection, environmental monitoring, scientific research.But existing quantum well radiation device exists radiating efficiency lower, the shortcomings and deficiencies such as light output is unstable, and luminous efficiency is lower.
Summary of the invention
Task of the present invention is to solve the above-mentioned shortcomings and deficiencies that exist in prior art, and a kind of novel quantum well electron emitting structure, particularly a kind of quantum-well laser are provided.The technical scheme providing is as follows:
Quantum well el light emitting device, comprises semiconductor body (1), and this semiconductor body has
-surface emitting comprise Vertical Launch utmost point layer (3),
Be provided for the pumping source (4) of Vertical Launch utmost point layer (3) described in optical pumping,
Described pumping source (4) has pumping layer (5);
Between described pumping layer (5) and emitter layer (3), there is overcoat (19)
Between described pumping layer (5) and Vertical Launch utmost point layer (3) distance be in vertical direction described overcoat (19) thickness 2-3 doubly; Between overcoat and emitter layer, have ducting layer, described ducting layer 14 comprises aluminium-gallium-arsenide, and wherein aluminum concentration is approximately 2-4%.
The layer thickness of described overcoat (19) is approximately 1.5 microns.
Described overcoat (19) aluminum concentration is approximately 20%.
Further comprise the not Prague-mirror structure (7) containing dopant material.
Wherein, described Prague-mirror structure (7) is arranged in the one side of described pumping source dorsad (4) of described Vertical Launch utmost point layer (3).
Described quantum well el light emitting device comprises at least one speculum (34), and this speculum (34) is formed for the laserresonator of the electromagnetic radiation (31) producing in described Vertical Launch utmost point layer (3) together with described Prague-mirror structure (7).
Accompanying drawing explanation
Fig. 1 is the constructed profile of quantum well el light emitting device of the present invention,
Embodiment
Described quantum well el light emitting device comprises semiconductor body 1.1 of this semiconductor body comprises growth substrate 8.Described growth substrate 8 is such as being GaAs (the GaAs)-matrix of n-doping.The preferred attenuate of this growth substrate 8.That is to say, the thickness of described growth substrate 8 preferably reduces after finishing epitaxial growth.Also described growth substrate 8 can be removed completely at this.
The thickness of preferred described growth substrate 8 is between 100 to 200 microns.
In the illustrated embodiment of combination Fig. 1 of described quantum well el light emitting device, in described growth substrate 8, add opening 25.Described opening 25 is such as producing by etching.In described opening 25, the radiation of exposing described semiconductor body 1 penetrates surface 26.In the region of described opening 25, preferably remove described growth substrate 8 completely.
Follow after described growth substrate 8 in pumping source 4 and territory, Vertical Launch polar region 2.The 2 successively epitaxial depositions of pumping source 4 and territory, Vertical Launch polar region are to described growth substrate 8 and be jointly integrally integrated into thus in described semiconductor body 1.
Territory, described Vertical Launch polar region 2 comprises the first speculum 7.Preferably a kind of Prague-mirror structure of described the first speculum 7.As an alternative, described the first speculum 7 also can be configured to metallic mirror or dielectric speculum or be configured to the combination of at least two kinds in three kinds of listed mirror type.Particularly preferably described the first speculum 7 is a kind of Prague-mirror structures that do not contain dopant material.With respect to the speculum of doping, not containing in Prague-mirror structure of dopant material, advantageously reduce the absorption from the free carrier of the Vertical Launch utmost point layer 3 in territory, described Vertical Launch polar region 2.
Described the first speculum 7 is preferably formed the cavity mirror of the electromagnetic radiation for producing at described Vertical Launch utmost point layer 3.
In the time of the operation of described quantum well el light emitting device, from described Vertical Launch utmost point layer 3, launch electromagnetic radiation 31, such as the radiation of infrared, visible or ultraviolet.Described Vertical Launch utmost point layer 3 preferably comprises III-V-compound semiconductor materials, especially In
xal
yga
1-x-yn, In
xal
yga
1-x-yp or In
xal
yga
1-x-yas, wherein 0≤x≤1,0≤y≤1 and x+y≤1.
In addition, described Vertical Launch utmost point layer 3 can comprise II-VI compound semiconductor materials such as ZnSe or ZnO.
Described Vertical Launch utmost point layer 3 is configured to simply-quantum potential well structure or multiple-quantum potential well structure.
The quantum potential well structure of preferred described Vertical Launch utmost point layer 3 is suitable for being absorbed in the electromagnetic radiation producing in described pumping source 4.That is to say, the absorption of pumping radiation is not preferably to carry out in the extra barrier layer being arranged in territory, described Vertical Launch polar region 2, but described pumping radiation is absorbed and excites there generation electromagnetic radiation 31 in the quantum potential well structure of described Vertical Launch utmost point layer 3.
Penetrate the direction on surface 26 towards the radiation of described semiconductor body 1, after described Vertical Launch utmost point layer 3, in territory, described Vertical Launch polar region 2, following vertical ducting layer 14.The ducting layer 14 that is preferably the layer thickness with the highest 30 microns is selected thicker thickness.Particularly preferably the layer thickness of described ducting layer 14 is between half micron and 5 microns.In this embodiment, the layer thickness of described ducting layer 14 is approximately 1.5 microns.Preferred described ducting layer 14 comprises aluminium-gallium-arsenide, wherein aluminum concentration is approximately 2-4%, if the concentration of aluminium is greater than 4%, ducting layer 14 is because the probability that stress produces crack increases greatly, if the concentration of aluminium is less than lower limit 2%, the refractive index of ducting layer can not meet the requirement of light transmission.Described ducting layer 14 is provided for the expansion of the pumping radiation producing in described pumping source 4.That is to say, preferably the refraction index profile delivery by described ducting layer 14 is in described Vertical Launch utmost point layer 3 in described pumping radiation, and described pumping radiation is absorbed and at least in part for generation of radiation there.
Penetrate the direction on surface 26 towards the radiation of described semiconductor body 1, following at least one etching stopping layer 15 below at described ducting layer 14.Described etching stopping layer 15 forms optionally etching stopping layer on the one hand.By means of described etching stopping layer 15, can make highly doped contact layer 18 be exposed to pumping source 4 times, and set up in this way bench-type structure 6, this bench-type structure 6 is such as comprising described the first speculum 7, Vertical Launch utmost point layer 3 and ducting layer 14.Described etching stopping layer 15 input from pumping source to described Vertical Launch utmost point layer 3 for improvement of pumping radiation on the other hand.
Penetrate the direction on surface 26 towards the radiation of described semiconductor body 1, after described etching stopping layer 15, following highly doped contact layer 18.Highly doped contact layer 18 has been realized with small contact and has been carried out contacting of class-ohm with series resistance, for contacting described pumping source 4.Preferred described contact layer 18 has as far as possible little layer thickness.Described highly doped contact layer 18 is such as doped with p-dopant material and have at least 10
19cm
-3dopant material concentration.Preferred described contact layer 18 is arranged in the node of stationary field (Stehwellenfeld) of the optics of the described electromagnetic radiation 31 producing in Vertical Launch utmost point layer 3.Advantageously reduce thus possible loss mechanism (Verlustmechanismen)-such as the absorption of free carrier in highly doped contact layer 18.
For contacting described pumping source 4, preferably contact described highly doped contact layer 18 by means of transparent contact layer 16, described contact layer 16 is such as can comprising ZnO, ITO or other TCO-material (TCO-transparent conductive oxide (transparent conductive oxide)) or being made up of a kind of material in these materials.In addition, the transitional region from territory 2, described Vertical Launch polar region to pumping source 4 can comprise other layer.
Such as can arrange multiple layers with high aluminum concentration between described highly doped contact layer 18 and transparent contact layer 16.Such as these layers are Al of selective oxidation
xga
1-xas layer.High aluminium content layer preferably in side by etch structures and partly selective oxidation.At the Al of these selective oxidations
xo
yin region, can realize the particularly preferred waveguide effect of described pumping radiation, wherein x is such as being more than or equal to 0.98.Oxidation at the layer of high aluminium content described in regional area causes larger about 1.4 variations in refractive index there, and can vertically realize in part the strong optical waveguide of pumping light.In territory, described Vertical Launch polar region 2, the not oxidation of the layer of described high aluminium content.About 0.13 refractive index difference is smaller in this case, thereby described pumping wave can be propagated and be absorbed into there in described quantum potential well structure in the region of described Vertical Launch utmost point layer 3.
Al with electric insulation
xo
y-region is contrary, in unoxidized region, sets up conductive contact by means of etch pit and described pumping source 4.Can be by means of transparent contact layer 16 or such as the contact layer that comprises AuZn or be made up of AuZn contacts.
As an alternative, also can save the layer of described high aluminium content.In this case, described transparent contact layer 16 is set on described highly doped contact layer 18 as far as possible in large area.The oxide (TCO) that described contact layer 16 comprises transparent conduction is such as ZnO or ITO or be preferably made up of it.Preferred described contact layer 16 has the refractive index in about 1.7 and 2.2 between lower than the semi-conducting material of described pumping source 4.There is about 1.85 refractive index and ITO such as ZnO and there is about 2.0 refractive index.
A kind of low like this refractive index and high refractive index difference that cause thus and semiconductor layer adjacency have advantageously been realized the particularly preferred waveguide of pumping radiation in described pumping source 4.For improving electrically contacting between described pumping source 4 and transparent contact layer 16, can between described highly doped contact layer 18 and transparent contact layer 16, arrange thin metal level, this metal level is preferably several single monolayer thick, preferably approximately a single monolayer thick.This metal level comprises a kind of metal in following metal or is preferably made up of it: chromium, platinum, gold, titanium, silver.
As the replacement scheme of the illustrated execution mode of combination Fig. 1 of the quantum well el light emitting device of described photoelectricity, also can abandon described transparent contact layer 16 and highly doped contact layer 18.In this case, in the outer Yanzhong of two steps optionally, the ducting layer with less refractive index adulterating is set in described pumping source 4.This layer is then such as being made up of the aluminium-gallium-arsenide with about 45% aluminium share and having a 1*10
17to 20*10
17cm
-3concentration of dopant atoms.The layer thickness of described ducting layer is preferably approximately 600 nanometers.Then on this has the layer of less refractive index, highly doped cover layer is set, described cover layer is such as by having 1*10
20cm
-3the GaAs of dopant material concentration make.The metal level that forms ohmic contact can be set on described cover layer.
Penetrate the direction on surface 26 towards the radiation of described semiconductor body 1, after described highly doped contact layer 18, following described pumping source 4.Described pumping source 4 comprises overcoat 19 and pumping layer 5.Described pumping source 4 is preferably formed the laser of edge-emission.For this reason, the side of described semiconductor body 1 at least in the region of described pumping source 4, be provided with concerning pumping radiation, be configured to high catoptric arrangement-such as dielectric-coating.
Described pumping layer 5 preferably includes pn-knot, and this pn-knot is provided for producing radiation by means of electric pump.The overcoat 19 of described pumping source 4 is such as being made up of the aluminium-gallium-arsenide with about 20% aluminum concentration that adulterating and having the thickness of about two microns.
Between described pumping layer 5 and Vertical Launch utmost point layer 3 distance be in vertical direction described overcoat 19 thickness 2-3 doubly, if described distance is excessive, decay when pump light arrives emitter layer 3 is excessive, its pumping efficiency will reduce greatly.
The direction that penetrates surface 26 towards the radiation of described semiconductor body 1 is being followed etching stopping layer 20 after described pumping source 4.Described etching stopping layer 20 has been realized with specific mode opening 25 has been carried out to etching, and by this opening 25, the electromagnetic radiation 31 producing in described Vertical Launch utmost point layer 3 can especially not have loss and leaves described semiconductor body 1.In addition, described etching stopping layer 20 preferably also forms ducting layer, and this ducting layer has little refractive index concerning the pumping radiation of described pumping source 4.In addition, described etching stopping layer 20 preferably has large band gap.In this way, the charge carrier having improved in pumping source 4 by described etching stopping layer 20 is enclosed.Such as described etching stopping layer 20 is made up of the gallium-indium-phosphide-layer of about 460 nanometer thickness.
In the illustrated embodiment of combination Fig. 1 of the quantum well el light emitting device of described photoelectricity, following ducting layer 21 below at described etching stopping layer 20.Preferred described ducting layer 21 is n-doping.This ducting layer 21 is such as having 10
17cm
-3dopant material concentration.This ducting layer 21 is such as being made up of the aluminium-gallium-arsenide-layer with 45% aluminium share of about 1000 nanometer thickness.
After described ducting layer 21, arrange growth substrate 8.Preferred described growth substrate 8 is thinned, and have between 100 and 200 microns, the thickness of 150 microns preferably approximately.Described growth substrate is such as the about 2*10 that has being adulterated by n-
18cm
-3dopant material concentration GaAs form.
On described growth substrate 8, be provided with contacting metal sprayed coating 22, this contacting metal sprayed coating 22 is such as can comprising gold or being made of gold.Described contacting metal sprayed coating 22 has the layer thickness of about 200 nanometers.
Described semiconductor body 1 with its dorsad described radiation penetrate surface 26 one side and be arranged on radiator
on 11.Such as can described semiconductor body 1 being set on described radiator 11 by means of the weld layer 10 such as comprising tin.The thickness of described weld layer 10 is preferably approximately two microns.Described radiator 11 is such as being to comprise material that heat conductivility is good as the bearing of copper or ceramic material.
Described material 9 is set on described semiconductor body in the environment of described bench-type structure, that is to say on the side of this bench-type structure of restriction that is set to highly doped contact layer 18 and described bench-type structure.
Preferred described material 9 is silver-or gold-electrodeposited coatings.At this, silver and/or gold are due to its good heat conduction and the applicable use of electric conductivity.Preferably by means of cold galvanising process, described material 9 is set on described semiconductor body 1.
The approximately process temperature between 20 and 100 degrees Celsius lower in electroplating deposition is advantageous particularly, because semi-conducting material and the material 9 of the described basic material as semiconductor body 1 have different thermal coefficient of expansions.This such as being exactly such situation in the semiconductor layer sequence such as GaAs (GaAs) based on arsenide-compound semiconductor, and described semiconductor layer sequence has about 6*10
-6k
-1thermal coefficient of expansion, at this, gold layer is set to described semiconductor layer sequence with plating mode and lists, described gold layer has about 14*10
-6k
-1thermal coefficient of expansion.
In the illustrated embodiment of combination Fig. 1 of the quantum well el light emitting device of described photoelectricity, described radiator 11 with its dorsad the one side of described semiconductor body 1 be installed on bearing 12.Described radiator 11 carries out machinery and is electrically connected with described bearing 12 by means of weld layer 13 at this.Described weld layer 13 is such as being made up of tin, and has the thickness of about two microns.Described bearing 12, such as being to connect bearing such as metal-cored printed circuit board, can electrically contact described pumping source 4 by means of described connection bearing.
What penetrate surface 26 in the radiation of described semiconductor body 1 has arranged below optical element 30.Described optical element 30 is such as being the optical element of frequency-selecting, and this element has been realized the single mode operational mode of the arrowband of described quantum well el light emitting device.The element 30 of described frequency-selecting is such as being calibrator and/or birefringent filter.
In addition, described quantum well el light emitting device comprises refrative mirror 33, and this refrative mirror 33 forms outside hole together with cavity mirror 34, has arranged optically nonlinear crystal 32 in this hole.Described optically nonlinear crystal comprises at least one in following crystal: three lithium borates are such as LiB
3o
5(LBO), bismuth boracic acid is such as BiB
3o
6(BiBO), KTP KTiOPO
4(KTP), adulterate lithium niobate that magnesian coupling adapts to such as MgO:LiNbO
3(MgO:LN), adulterate magnesian stoichiometric lithium niobate such as MgO:s-LiNbO
3(MgO:SLN), adulterate magnesian stoichiometric lithium tantalate such as MgO:LiTaO
3(MgO:SLT), stoichiometric LiNbO
3(SLN), stoichiometric LiTaO
3(SLT), RTP (RbTiOPO
4), KTA (KTiOAsO
4), RTA (RbTiOAsO
4), CTA (CsTiOAsO
4).
The crystal 32 of frequency translation is preferably suitable for the double increasing frequency of the electromagnetic radiation of passing from this crystal.Described refrative mirror 33 is configured to high reflection to the electromagnetic radiation 31 of basic wavelength producing in described Vertical Launch utmost point layer 3.The major part that is transformed the radiation of frequency is at least sent by described refrative mirror 33.
The present invention is not limited to by means of described embodiment description.Or rather, the present invention includes every kind of new feature and every kind of Feature Combination, this is especially included in every kind of combination of feature described in claim, even if this feature this combination in other words itself is not illustrated clearly in claim or embodiment.
Claims (6)
1. quantum well el light emitting device, comprises semiconductor body (1), and this semiconductor body has
-surface emitting comprise Vertical Launch utmost point layer (3),
Be provided for the pumping source (4) of Vertical Launch utmost point layer (3) described in optical pumping,
Described pumping source (4) has pumping layer (5);
Between described pumping layer (5) and emitter layer (3), there is overcoat (19)
Between described pumping layer (5) and Vertical Launch utmost point layer (3) distance be in vertical direction described overcoat (19) thickness 2-3 doubly;
Between overcoat and emitter layer, have ducting layer, described ducting layer 14 comprises aluminium-gallium-arsenide, and wherein aluminum concentration is approximately 2-4%.
2. by quantum well el light emitting device claimed in claim 1, the layer thickness of described overcoat (19) is approximately 1.5 microns.
3. by quantum well el light emitting device claimed in claim 1, in described overcoat (19), aluminum concentration is approximately 20%.
4. by quantum well el light emitting device claimed in claim 1, further comprise the not Prague-mirror structure (7) containing dopant material.
5. press last the quantum well el light emitting device described in claim,
Wherein, described Prague-mirror structure (7) is arranged in the one side of described pumping source dorsad (4) of described Vertical Launch utmost point layer (3).
6. by quantum well el light emitting device claimed in claim 5, wherein, described quantum well el light emitting device comprises at least one speculum (34), and this speculum (34) is formed for the laserresonator of the electromagnetic radiation (31) producing in described Vertical Launch utmost point layer (3) together with described Prague-mirror structure (7).
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|---|---|---|---|
| CN201210442265.8A CN103812005A (en) | 2012-11-07 | 2012-11-07 | Quantum well electroluminescent device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210442265.8A CN103812005A (en) | 2012-11-07 | 2012-11-07 | Quantum well electroluminescent device |
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| CN103812005A true CN103812005A (en) | 2014-05-21 |
Family
ID=50708399
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| CN201210442265.8A Pending CN103812005A (en) | 2012-11-07 | 2012-11-07 | Quantum well electroluminescent device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021003643A1 (en) * | 2019-07-08 | 2021-01-14 | Xiamen Sanan Integrated Circuit Co., Ltd. | Vertical-cavity surface-emitting laser device |
-
2012
- 2012-11-07 CN CN201210442265.8A patent/CN103812005A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021003643A1 (en) * | 2019-07-08 | 2021-01-14 | Xiamen Sanan Integrated Circuit Co., Ltd. | Vertical-cavity surface-emitting laser device |
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Application publication date: 20140521 |