CN103811617B - Semiconductor light-emitting elements and light-emitting device - Google Patents
Semiconductor light-emitting elements and light-emitting device Download PDFInfo
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- CN103811617B CN103811617B CN201310561694.1A CN201310561694A CN103811617B CN 103811617 B CN103811617 B CN 103811617B CN 201310561694 A CN201310561694 A CN 201310561694A CN 103811617 B CN103811617 B CN 103811617B
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Abstract
The present invention make to hang oneself the face up output of light of the semiconductor light-emitting elements installed and use increases.A kind of semiconductor light-emitting elements (1), has: n-type semiconductor layer (120), luminescent layer (130), p-type semiconductor layer (140)；It is connected to p side power supply section (150) of p-type semiconductor layer (140)；With n side power supply section (160) being connected to n-type semiconductor layer (120).P side current electrode (152) in p side power supply section (150) and n side current electrode (162) in n side power supply section (160), the rear side being located at p-type semiconductor layer (140) is observed from luminescent layer (130), between p-type semiconductor layer (140) and these p sides current electrode (152) and n side current electrode (162), it is formed with confession electric insulation layer (170) being set to the 1st thickness that easily reflection carrys out the light of light emitting layer (130), at the non-existent position of these electrodes, in addition to being formed for electric insulation layer (170), it is also formed with being set to the protection insulating barrier (180) of the 2nd thickness, thus it is configured to easily make light transmissive 3rd thickness of light emitting layer (130).
Description
Technical field
The present invention relates to semiconductor light-emitting elements and light-emitting device.
Background technology
Use the semiconductor light-emitting elements of the luminescent layer of GaInN, AlInGaP, GaAlAs etc., quilt
Utilize the light emitting diode high as luminous efficiency.Such as, the group III-nitride such as GaInN half are used
The semiconductor light-emitting elements of conductor, such as, form the III comprising luminescent layer on the substrate of sapphire etc.
Nitride semiconductor layer and constitute.And, there is following structure: by supine mode
Wiring substrate is installed semiconductor light-emitting elements, the light exported from luminescent layer is injected to outside.
, there is a kind of semiconductor light-emitting elements, consist of in the prior art recorded as publication,
Stacking n-type semiconductor layer, luminescent layer and p-type semiconductor layer on substrate, becoming and substrate opposition side
P-type semiconductor layer on formed p-electrode, and, by part remove p-type semiconductor layer and send out
Both photospheres and in the n-type semiconductor layer that the side contrary with substrate is exposed formed n-electrode (reference
Patent documentation 1).
Citation
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2012-28495 publication
Summary of the invention
But, in order to form n-electrode, and use by removing p-type semiconductor layer and luminescent layer
And in the case of making the composition that n-type semiconductor layer is exposed, the face of the luminescent layer in semiconductor light-emitting elements
Long-pending reduce, have correspondingly light from semiconductor light-emitting elements to export the anxiety of reduction.
It addition, use do not remove p-type semiconductor layer and luminescent layer and with luminescent layer to
Position configuration n-electrode composition in the case of, from luminescent layer output light can be absorbed by n-electrode,
, there is the light from semiconductor light-emitting elements and export the anxiety becoming to be difficult to increase in its result.
Summary of the invention
It is an object of the invention to make the light from by the semiconductor light-emitting elements installed and use that faces up
Output increase.
The semiconductor light-emitting elements of the present invention, it is characterised in that possess: by having the 1st conduction type
Compound semiconductor constitute the 1st semiconductor layer；With the 1st half on described 1st semiconductor layer
Conductor layer is placed in contact with, and is made up of compound semiconductor and the luminescent layer of luminescence by energising；?
It is placed in contact with this luminescent layer on described luminescent layer, different from described 1st conduction type by having
The 2nd semiconductor layer that the compound semiconductor of the 2nd conduction type is constituted；Observe from described luminescent layer and set
In the rear side of described 2nd semiconductor layer, the light of the wavelength for exporting from this luminescent layer have
The insulant of penetrating property is constituted, and is set to the 1st transparent insulating layer of the 1st thickness；From described
Photosphere observes the rear side being located at described 1st transparent insulating layer, is made up of metal and with the described 1st half
1st current electrode of conductor layer electrical connection；Observe from described luminescent layer and be located at described 1st transparent insulation
The rear side of layer, the 2nd current electrode being made up of metal and electrically connecting with described 2nd semiconductor layer；
It is located at the rear side of described 1st transparent insulating layer, by for from this luminescence with observing from described luminescent layer
The light of wavelength of layer output has radioparent insulant and constitutes, and is set to the of the 2nd thickness
2 transparent insulating layers,
Described 1st thickness is set as, and the light of the wavelength exported from described luminescent layer is easily reflected big
Little, described 1st thickness is set as from described luminescence plus the 3rd thickness of described 2nd thickness gained
The size that the light of the wavelength of layer output is easily transmitted.
In such semiconductor light-emitting elements, it is possible to make it is characterized in that, also have: via running through
Described in the Kong Eryu of described 1st transparent insulating layer, described 2nd semiconductor layer and described luminescent layer
1st connection electrode of 1 semiconductor layer electrical connection；With from this luminescent layer observe be located at the 1st transparent absolutely
The rear side of edge layer, connects electrode and the 1st auxiliary of described 1st current electrode electrical connection by the 1st
Electrode, described 2nd transparent insulating layer is arranged in the way of covering described 1st auxiliary electrode.
It addition, can make to it is characterized in that also having: via running through described 1st transparent insulating layer
2nd connection electrode of the 2nd semiconductor layer electrical connection described in Kong Eryu；Set with observing from described luminescent layer
In the rear side of the 1st transparent insulating layer, connect electrode and described 2nd current electrode electricity by the 2nd
The 2nd auxiliary electrode connected, described 2nd transparent insulating layer is to cover the side of described 2nd auxiliary electrode
Formula is arranged.
And then, it is possible to make it is characterized in that, described 1st transparent insulating layer and described 2nd transparent insulation
Layer is constructed from the same material.
And then, it is possible to making it is characterized in that, described compound semiconductor comprises group III-nitride partly leads
Body, described 1st semiconductor layer is directly or via other layer stackup on substrate.
It addition, from the viewpoint of other, the light-emitting device of the present invention, it is characterised in that including:
It is formed with the 1st distribution and the base portion of the 2nd distribution；With the quasiconductor connected upward for this base surface
Light-emitting component,
Described semiconductor light-emitting elements possesses: be made up of the compound semiconductor with the 1st conduction type
The 1st semiconductor layer；Described 1st semiconductor layer is placed in contact with the 1st semiconductor layer,
It is made up of compound semiconductor and the luminescent layer of luminescence by energising；On the light-emitting layer with this
Photosphere is placed in contact with, by the chemical combination with 2nd conduction type different from described 1st conduction type
The 2nd semiconductor layer that thing quasiconductor is constituted；Observe from described luminescent layer and be located at described 2nd semiconductor layer
Rear side, the light of the wavelength for exporting from this luminescent layer there is radioparent insulant and constitute,
And it is set to the 1st transparent insulating layer of the 1st thickness；Observe from described luminescent layer and be located at the described 1st
The rear side of transparent insulating layer, is made up of metal and electrically connects with described 1st semiconductor layer, Er Qieyu
It is located at the 1st current electrode that described 1st wired electric of described base portion connects；Observe from described luminescent layer
It is located at the rear side of described 1st transparent insulating layer, is made up of metal and electric with described 2nd semiconductor layer
The 2nd current electrode connected and be connected with described 2nd wired electric being located at described base portion；With from
The rear side being located at described 1st transparent insulating layer observed by described luminescent layer, by for defeated from this luminescent layer
The light of the wavelength gone out has radioparent insulant and constitutes, and is set to the 2nd saturating of the 2nd thickness
Bright insulating barrier,
Described 1st thickness is set as, and the light of the wavelength exported from described luminescent layer is easily reflected big
Little, described 1st thickness is set as from described luminescence plus the 3rd thickness of described 2nd thickness gained
The size that the light of the wavelength of layer output is easily transmitted.
In accordance with the invention it is possible to make from the semiconductor light-emitting elements installed and use by facing up
The output of light increases.
Accompanying drawing explanation
Fig. 1 represents an example of the top view of the semiconductor light-emitting elements in embodiment 1.
Fig. 2 is the II-II sectional view in Fig. 1.
Fig. 3 is the III-III sectional view in Fig. 1.
Fig. 4 is the IV-IV sectional view in Fig. 1.
Fig. 5 is the figure of an example of the composition representing the p side power supply section in embodiment 1.
Fig. 6 is the figure of an example of the composition representing the n side power supply section in embodiment 1.
Fig. 7 is to represent for electric insulation layer and the figure of an example of the composition of protection insulating barrier.
Fig. 8 is the figure of an example of the composition representing the light-emitting device being equipped with semiconductor light-emitting elements.
Detailed description of the invention
Hereinafter, referring to the drawings, embodiments of the present invention are described in detail.Additionally, in the following description
The size of each several part in the accompanying drawing of reference, thickness etc. exist and actual semiconductor light-emitting elements etc.
The situation that size is different.
Fig. 1 is an example of the top view of the semiconductor light-emitting elements 1 in embodiment 1.It addition, figure
2 is the II-II sectional view in Fig. 1, and Fig. 3 is the III-III sectional view in Fig. 1, and Fig. 4 is in Fig. 1
IV-IV sectional view.Here, the semiconductor light-emitting elements 1 of present embodiment, such as such as Fig. 1 institute
Showing, rectangular in shape time viewed from above, the longitudinal direction in figure is short brink, and in figure is laterally long
Avris.Additionally, in the following description, as required, the longitudinal direction in Fig. 1 is referred to as short side direction,
By the most referred to as long side direction in Fig. 1.
(semiconductor light-emitting elements)
The semiconductor light-emitting elements 1 of present embodiment, possesses: substrate 110, be layered on substrate 110
N-type semiconductor layer 120, the luminescent layer 130 being layered in n-type semiconductor layer 120 and stacking
P-type semiconductor layer 140 on luminescent layer 130.Additionally, in the following description, as required,
These n-type semiconductor layer 120, luminescent layer 130 and p-type semiconductor layer 140 are collectively referred to as
Stacked semiconductor layers 100.It addition, between substrate 110 and n-type semiconductor layer 120, according to need
Want, it is also possible to intermediate layer (not shown) and/or basal layer (not shown) are set.
Here, n-type semiconductor layer 120, have: n contact layer 121 and being layered on substrate 110
It is layered on n contact layer 121 and becomes the n cover layer 122 of stacking objects of luminescent layer 130.This
Outward, though details not being illustrated, but about p-type semiconductor layer 140, it is also possible to set
For: include the p cover layer (not shown) being layered on luminescent layer 130 and be layered in p cover layer
On the composition of P-contact layer (not shown).
It addition, semiconductor light-emitting elements 1, possess: the p side electrically connected with p-type semiconductor layer 140
Power supply section 150 and the n side power supply section 160 electrically connected with n-type semiconductor layer 120.And, half
Conductor light-emitting component 1, has: by these between p side power supply section 150 and n side power supply section 160
The confession electric insulation layer 170 of p side power supply section 150 and n side power supply section 160 electric insulation；With from will be from
The outside moisture protection luminescent layer 130 etc. entered to the inside of semiconductor light-emitting elements 1, and by p side
The protection insulating barrier 180 of power supply section 150 and n side power supply section 160 electric insulation.
Here, p side power supply section 150 has: is layered in p-type semiconductor layer 140 and becomes confession
The p side transparency conducting layer 151 of the stacking objects of electric insulation layer 170；It is formed at for electric insulation layer 170
On p side current electrode 152 and p side auxiliary electrode 153；With via running through for electric insulation layer 170
Hole, by p side transparency conducting layer 151 and p side current electrode 152 or p side auxiliary electrode 153
Multiple (being 7 in this example) p side of electrical connection connects electrode 154.
In the p side power supply section 150 of present embodiment, p side transparency conducting layer 151 is with blanket p-type
Mode among the upper surface of semiconductor layer 140, in addition to circumference the most whole is formed.
It addition, in the p side power supply section 150 of present embodiment, as an example of the 2nd current electrode
P side current electrode 152, be arranged in limit side among the upper surface of semiconductor light-emitting elements 1, long
To end side (being right side in Fig. 1) and the central part of short side direction, when upper surface side is observed in
Round-shaped.At the upper surface of p side current electrode 152, there is no stacked guard insulating barrier 180(example
As with reference to Fig. 3), p side current electrode 152 exposes to outside.And, p side current electrode 152,
It is used for not shown closing line etc. with outside electrical connection.
And, in the p side power supply section 150 of present embodiment, as an example of the 2nd auxiliary electrode
P side auxiliary electrode 153, have: end side integrated with p side current electrode 152 and another
Side is along p side the 1st auxiliary electrode of the L-shaped of the long side direction extension of semiconductor light-emitting elements 1
153a；With end side is integrated with p side current electrode 152 and another side is along semiconductor light emitting element
P side the 2nd auxiliary electrode 153b of the L-shaped that the long side direction of part 1 extends.Here, this enforcement
In mode, p side the 1st auxiliary electrode 153a is short side direction one end of semiconductor light-emitting elements 1 partially
Side (upper side in Fig. 1), and, p side the 2nd auxiliary electrode 153b is semiconductor light emitting partially
Another side (lower side in Fig. 1) of the short side direction of element 1 and configure, thus, p side the 1st
Auxiliary electrode 153a and p side the 2nd auxiliary electrode 153b will not directly contact.And, at these p
The upper surface layer of side the 1st auxiliary electrode 153a and p side the 2nd auxiliary electrode 153b is laminated with protection absolutely
Edge layer 180(is referring for example to Fig. 2, Fig. 4).It addition, in present embodiment, connect electricity as the 2nd
The p side of one example of pole connects electrode 154, is provided with one in the lower section of p side current electrode 152,
The lower section of p side the 1st auxiliary electrode 153a is provided with three, under the auxiliary electrode 153b of p side the 2nd
Side is provided with three.
On the other hand, n side power supply section 160 has: is formed at and supplies for the n side on electric insulation layer 170
Electricity electrode 162 and n side auxiliary electrode 163；With power for electric insulation layer 170, p side via running through
P side transparency conducting layer 151, p-type semiconductor layer 140, luminescent layer 130 and N-shaped in portion 150
The hole of the n cover layer 122 in semiconductor layer 120, by the n contact layer in n-type semiconductor layer 120
121 and n the multiple of side current electrode 162 or n side auxiliary electrode 163 electrical connection (are 3 in this example
Individual) n side connection electrode 164.
In the n side power supply section 160 of present embodiment, as the n side of an example of the 1st current electrode
Current electrode 162, be arranged in the upper surface of semiconductor light-emitting elements 1, long side direction another
Side (left side in Fig. 1) and the central part of short side direction, semicircular in shape shape when upper surface side is observed.
It addition, the upper surface of n side current electrode 162 do not have stacked guard insulating barrier 180(referring for example to
Fig. 3), n side current electrode 162 exposes to outside.And, n side current electrode 162 is used for being situated between
By the electrical connection with outside of not shown closing line etc..
It addition, in the n side power supply section 160 of present embodiment, as an example of the 1st auxiliary electrode
N side auxiliary electrode 163, be provided only with one, its end side is integrated with n side current electrode 162,
And another side along the long side direction of semiconductor light-emitting elements 1 and prolongs towards p side current electrode 152
Stretch.Thus, n side auxiliary electrode 163 is configured in by the p side the 1st in p side power supply section 150 auxiliary
Help the region of electrode 153a and p side the 2nd auxiliary electrode 153b clamping.And, at n side auxiliary electricity
The upper surface layer of pole 163 is laminated with protecting insulating barrier 180(referring for example to Fig. 3).It addition, this embodiment party
In formula, the n side as the 1st example connecting electrode connects electrode 164, at n side current electrode 162
Lower section arrange one, arrange two in the lower section of n side auxiliary electrode 163.
Here, it is being connected the respective sidewall in multiple holes that electrode 164 is arranged in correspondence with each n side,
It is provided with above-mentioned confession electric insulation layer 170.Thus, connection electrode 164 in each n side is not the most saturating with p side
Bright conductive layer 151, p-type semiconductor layer 140 and luminescent layer 130 directly contact.On the other hand, exist
The respective bottom in these multiple holes, is not provided with for electric insulation layer 170, and each n side connects electrode
164 directly contact with n contact layer 121.
And, in present embodiment, such as it is shown in figure 1, when upper surface side is observed, two p
Side connects electrode 154 and a n side connects electrode 164 and configures in the way of triangular shape, or,
One p side connection electrode 154 and two n sides connect electrodes 164 and configure in the way of triangular shape.
Additionally, in semiconductor light-emitting elements 1, power supply section 150(p side, p side transparency conducting layer 151, p
Side current electrode 152, p side auxiliary electrode 153 and p side connect electrode 154) and n side power supply section
160(n side current electrode 162, n side auxiliary electrode 163 and n side connect electrode 164), it is joined
Put and be determined so as to make both and will not directly contact.
It addition, for electric insulation layer 170, be covered with except p side connects the forming part (7 of electrode 154
Individual position) beyond, the upper surface of p side transparency conducting layer 151.And, for electric insulation layer 170,
As it has been described above, be also covered with being connected the respective of multiple holes that electrode 164 is arranged in correspondence with each n side
Sidewall.
And, protect insulating barrier 180, be covered with except the p side in p side power supply section 150 powers electricity
The semiconductor light-emitting elements beyond n side current electrode 162 in the side power supply section 160 of pole 152 and n
The upper surface of 1.
Additionally, in the semiconductor light-emitting elements 1 of present embodiment, the most as shown in Figure 2 to 4,
It is also covered with luminescent layer 130 and p-type semiconductor for electric insulation layer 170 and protection insulating barrier 180
The side of layer 140.
Here, in the present embodiment, it is positioned at composition p side power supply section 150 for electric insulation layer 170
P side current electrode 152 and p side auxiliary electrode 153(still, except p side connect electrode 154
Forming part beyond) and constitute n side the current electrode 162 and n side of n side power supply section 160
Auxiliary electrode 163(still, except n side connect electrode 164 forming part in addition to) lower section (court
To luminescent layer 130 side).
On the other hand, in present embodiment, for electric insulation layer 170 and protection insulating barrier 180 with even
Continuous ground integrated state be positioned at do not exist these p side current electrodes 152, p side auxiliary electrode 153,
The position of n side current electrode 162 and n side auxiliary electrode 163.
In this semiconductor light-emitting elements 1, by making the p side current electrode in p side power supply section 150
152 is positive pole, and make n side current electrode in n side power supply section 160 162 for negative pole, circulate from
P side current electrode 152 is towards the electric current of n side current electrode 162, thus, makes luminescent layer 130
Light.
The semiconductor light-emitting elements 1 of present embodiment, has been formed from p side power supply section 150 and n
Light, the face up type light-emitting diodes from luminescent layer 130 output is taken out in the side of side power supply section 160
Pipe.Here, in the semiconductor light-emitting elements 1 of present embodiment, constitute p side power supply section 150
P side transparency conducting layer 151, p side current electrode 152, p side auxiliary electrode 153 and p side even
Receiving electrode 154 and n side the current electrode 162 and n side auxiliary electrode of composition n side power supply section 160
163, when observing from luminescent layer 130, it is configured in compared to p-type semiconductor layer 140 by inboard.
It addition, from the viewpoint of other, in the semiconductor light-emitting elements 1 of present embodiment, constituting
The p side transparency conducting layer 151 of p side power supply section 150, p side current electrode 152, p side auxiliary electrode
The n side of lower section and composition n side power supply section 160 that 153 and p sides connect electrode 154 powers
The lower section of electrode 162 and n side auxiliary electrode 163 (but, except n side connects electrode 164
Beyond the lower section of forming part) there is also luminescent layer 130.
Each element of semiconductor light-emitting elements 1 is carried out in detail by limit with reference to Fig. 1～Fig. 4 limit below
Explanation.
Additionally, in the following description, about as compound semiconductor and group III-nitride half
AlGaN, GaN, GaInN of one example of conductor, sometimes to omit the form of the ratio of components of each element
Describe.
＜ substrate ＞
As substrate 110, as long as can be at the base of surface epitaxial growth III nitride semiconductor crystallization
Plate, is not particularly limited, it is possible to select various baseplate material to use.For instance, it is possible to use by
The baseplate material that sapphire, SiC, GaN, silicon etc. are constituted.
It addition, among aforesaid substrate material, preferably clear substrate, especially, at quality, cost
Aspect, is preferably used for substrate 110 by the sapphire with C face as interarea.Using sapphire as base
In the case of plate 110, preferably on sapphire C face, surface is implemented in concavo-convex processing, and formation
Interbed (cushion).
＜ intermediate layer ＞
Intermediate layer, preferably comprises the Al of polycrystallinexGa1-xN(0≤x≤1) layer, more preferably monocrystalline
AlxGa1-xN(0≤x≤1) layer, for instance, it is possible to be set to comprise the Al of polycrystallinexGa1-xN(0≤x≤1)
The intermediate layer of thickness 10～500nm.Furthermore, intermediate layer has following effects: relax substrate 110
With the difference of the lattice paprmeter of basal layer described later, on (0001) face (C face) of substrate 110
The formation making the single crystalline layer that c-axis is orientated is easy.Therefore, if the basal layer of stacking monocrystalline on the intermediate layer,
Then can form the more preferable stacked semiconductor layers of crystallinity 100.
＜ basal layer ＞
As basal layer, it is possible to use AlxGayInzN(0≤x≤1,0≤y≤1,0≤z≤1, x+y+z
=1), if but using AlxGa1-xN(0≤x ＜ 1), the most easily form the basal layer of good crystallinity.
The thickness of basal layer is preferably more than 0.1 μm, is formed as more than this thickness and is readily obtained crystallinity
Good AlxGa1-xN shell.The thickness preferably filling the concavo-convex of concavo-convex substrate processing and planarize.
It addition, the thickness of basal layer is preferably below 10 μm.
＜ stacked semiconductor layers ＞
The stacked semiconductor layers 100 comprising III nitride semiconductor and constitute, such as such as Fig. 2～figure
Shown in 4, being on substrate 110, n-type semiconductor layer 120, luminescent layer 130 and p-type are partly led
Each layer of body layer 140 is the most stacked and constitutes.It addition, n-type semiconductor layer 120, luminescence
Layer 130 and each layer of p-type semiconductor layer 140, can be made up of multiple semiconductor layers respectively.
Here, as the n-type semiconductor layer 120 of an example of the 1st semiconductor layer, it is that electronics is made
The semiconductor layer of conductivity is carried out, as the p-type semiconductor of an example of the 2nd semiconductor layer for carrier
Layer 140, is the semiconductor layer that hole carries out conductivity as carrier.In this embodiment, by electronics
N-shaped as carrier corresponds to the 1st conduction type, is corresponded to as the p-type of carrier in hole
2nd conduction type.
＜ n-type semiconductor layer ＞
N-type semiconductor layer 120, by the n contact being layered in substrate 110 side (for basal layer in this example)
Layer 121 and be laminated in the n cover layer 122 of n contact layer 121 and constitute.But, n contact layer 121
It also is able to double as n cover layer 122.Alternatively, it is also possible to aforesaid basal layer to be contained in N-shaped half
Conductor layer 120.
N contact layer 121, is for arranging n side power supply section 160(more specifically, connects for n side
Electrode 164) layer.As n contact layer 121, it is possible to use AlxGa1-xN shell (0≤x ＜ 1, excellent
Select 0≤x≤0.5, more preferably 0≤x≤0.1).
N cover layer 122, is by the carrier (here for the electronics) injection to luminescent layer 130 and load
The layer of the inclosure (close into) of stream.N cover layer 122 can use AlGaN, GaN, GaInN
Deng formation.Alternatively, it is also possible to be set to hetero-junctions or the stacking superlattice structure repeatedly of these structures.
In the case of being formed n cover layer 122 by GaInN, preferably than the GaInN of luminescent layer 130 described later
Band gap big.
Furthermore, in the case of n cover layer 122 is set to the layer comprising superlattice structure, Ke Yishe
For comprising following structure, this structure is that the III that comprises of the thickness being laminated with and having below 10nm nitrogenizes
N side the 1st cover layer of thing quasiconductor is different from n side the 1st cover layer with composition and has 10nm
N side the 2nd cover layer comprising III nitride semiconductor of following thickness.
It addition, n cover layer 122, it is also possible to it is to comprise n side the 1st cover layer and n side the 2nd covering
The layer of the structure that layer is laminated the most repeatedly, in the case of being somebody's turn to do, preferably GaInN's Yu GaN
Alternating structure or the different GaInN of composition alternating structure each other.
＜ luminescent layer ＞
As luminescent layer 130, it is possible to use single quantum or multi-quantum pit structure etc..
As the well layer of quantum well structure, generally can use and comprise Ga1-yInyN(0 ＜ y ＜ 0.4)
Group III nitride semiconductor layer.As the thickness of well layer, can be set to obtain the degree of quantum effect
Thickness, such as 1～10nm, consider from luminous output facet, preferably 2～6nm.
It addition, in the case of the luminescent layer 130 of multi-quantum pit structure, with above-mentioned Ga1-yInyN is
Well layer, with the Al that band-gap energy is bigger than well layerzGa1-zN(0≤z ＜ 0.3) it is barrier layer.Well layer with
And in barrier layer, can be with impurity, it is also possible to undope impurity.
＜ p-type semiconductor layer ＞
P-type semiconductor layer 140, preferably by the p cover layer being layered on luminescent layer 130 and be layered in p
Supratectal P-contact layer is constituted.But, P-contact layer also is able to double as p cover layer.
P cover layer, is for carrying out the carrier (here for the hole) inclosure (pass to luminescent layer 130
Enter) and the layer of injection of carrier.As p cover layer, as long as than the band-gap energy of luminescent layer 130
Measure big composition, it is possible to carry out carrier and be not particularly limited to the layer of the inclosure of luminescent layer 130,
Such as Al can be usedxGa1-xN(0 ＜ x≤0.4).
P cover layer, if comprising such AlGaN, then from carrier to the inclosure side of luminescent layer 130
It is preferred that face considers.The thickness of p cover layer, there is no particular limitation, but preferably 1～400nm,
More preferably 5～100nm.
It addition, p cover layer, with above-mentioned n cover layer 122 likewise it is possible to for stacking repeatedly
Superlattice structure, in such a situation it is preferred that be the alternately knot of AlGaN different with composition for AlGaN
Structure or the alternating structure of AlGaN and GaN.
P-contact layer, is for arranging p side power supply section 150(more specifically, leads for p side is transparent
Electric layer 151) layer.P-contact layer is preferably set to AlxGa1-xN(0≤x≤0.4).If in P-contact layer
Al consist of above-mentioned scope, then from being able to maintain that good crystallinity and maintaining lead transparent with p side
It is preferred from the standpoint of the good Ohmic contact of electric layer 151.
There is no particular limitation for the thickness of P-contact layer, but preferably 10～500nm, more preferably 50～
200nm.If making the thickness of P-contact layer within the range, then in terms of can reducing forward voltage Vf
It is preferred.
＜ p side power supply section ＞
Fig. 5 is the figure of an example of the composition representing the p side power supply section 150 in embodiment 1.At this
In, Fig. 5 represents that the current electrode 152 and p side, region V i.e. p side shown in Fig. 3 connects electrode 154
The amplification sectional view of boundary portion.But, it is connected electrode 154 with p side current electrode 152 and p side
Constitute together auxiliary electrode 153(p side the 1st, the p side auxiliary electrode 153a of p side power supply section 150 with
And p side the 2nd auxiliary electrode 153b) and be located at auxiliary electrode 153 side, p side p side connect electricity
Pole 154(is with reference to Fig. 2) also have and be commonly constructed with these electrodes.
［ p side transparency conducting layer ］
P side transparency conducting layer 151 with among the upper surface of blanket p-type semiconductor layer 140, except
The mode of the most whole beyond circumference is formed.
P side transparency conducting layer 151, is preferably used the ohm that can obtain with p-type semiconductor layer 140 and connects
Touch, and the transparency conducting layer little with the contact resistance of p-type semiconductor layer 140.It addition, at this partly
In conductor light-emitting component 1, due to via p side transparency conducting layer 151 from protection insulating barrier 180 side draw
The out light of light emitting layer 130, so, it is excellent that p side transparency conducting layer 151 is preferably used transmitance
Different transparency conducting layer.And, in order to make electric current in the range of whole of p-type semiconductor layer 140
Spread equably, p side transparency conducting layer 151 be preferably used have excellence electric conductivity and resistance divide
The transparency conducting layer that cloth is few.
Furthermore, the thickness of p side transparency conducting layer 151, it is possible to select from the scope of 2nm～500nm
Select.Here, if the thickness of p side transparency conducting layer 151 is thinner than 2nm, then exist be difficult to obtain with
The situation of the Ohmic contact of p-type semiconductor layer 140, if it addition, the thickness of p side transparency conducting layer 151
Spend thicker than 500nm, then have in terms of relative to the light transmission of the light exported from luminescent layer 130 the most preferred
Situation.
As p side transparency conducting layer 151, it is possible to using materials described below, described material for example, aoxidizes
The conductive material of thing is good relative to the light transmission of the light of the wavelength penetrated from luminescent layer 130.Relatively
Absorbance in the light of the wavelength exported from luminescent layer 130 is more than 90%, preferably 95% with
On.Especially, a part for the oxide containing In, compares with other nesa coating, printing opacity
Property and electric conductivity both excellent thus preferably.Oxide as the electric conductivity containing In, it is possible to
Enumerate such as IZO(indium zinc oxide (In2O3-ZnO)), ITO(tin indium oxide (In2O3-SnO2)),
IGO(indium gallium (In2O3-Ga2O3)), ICO(Indium sesquioxide. cerium (In2O3-CeO2)) etc..
Furthermore, in these materials, it is also possible to be added with the adulterant (alloy: dopant) of such as fluorine etc..
Alternatively, it is also possible to use does not such as contain the oxide of In, is such as doped with the SnO of carrier2、ZnO2、
TiO2Deng conductive material.
By using customary means well known in the art to arrange these materials, it is possible to form p side saturating
Bright conductive layer 151.And, after forming p side transparency conducting layer 151, promote by implementing heat treatment
Entering crystallization, the light transmission of p side transparency conducting layer 151 improves, and sheet resistance (film resistor:
Sheet resistor) reduce, the most easily obtain Ohmic contact.
In present embodiment, p side transparency conducting layer 151 can use the layer of the structure of crystallization,
Especially can be preferably used to comprise and there is structure of hexagonal crystal or the In of bixbite structure2O3Crystal
Translucent material (such as IZO, ITO etc.).
It addition, as the film for p side transparency conducting layer 151, than resistance low composition is preferably used.
Such as, the ZnO concentration in IZO is preferably 1～20 mass %, more preferably 5～15 mass %
Scope, particularly preferably 10 mass %.
And, if from the viewpoint of the adherence improving the film obtained, then p side transparency conducting layer 151
Preferably formed by such as sputtering method.
［ p side current electrode, p side auxiliary electrode and p side connect electrode ］
P side current electrode 152, p side auxiliary electrode 153 and p side in p side power supply section 150 connect
Receiving electrode 154, by opening from the side close to the p side transparency conducting layer 151 becoming connecting object
Begin to be sequentially laminated p side the 1st power supply layer 1501, p side the 2nd power supply layer 1502, p side the 3rd power supply
Layer 1503 and constitute.In present embodiment, p side the 1st power supply layer 1501 is made up of TaN, p side
2nd power supply layer 1502 is made up of Pt, and p side the 3rd power supply layer 1503 is made up of Au.It addition, p
The thickness of side the 1st power supply layer 1501 is about 1nm, and the thickness of p side the 2nd power supply layer 1502 is
The thickness of about 100nm, p side the 3rd power supply layer 1503 is about 1000nm.
Wherein, p side the 1st power supply layer 1501 has electric conductivity, and, as being used for improving and powering
The adhesive layer of the adherence of insulating barrier 170 and function.It addition, p side the 2nd power supply layer 1502 has
Conductive, as preventing the TaN constituting p side the 1st power supply layer 1501 to p side the 3rd power supply layer
1503 sides are spread and prevent the Au constituting p side the 3rd power supply layer 1503 to p side the 1st power supply layer
What 1501 sides were spread prevents diffusion layer function.And, p side the 3rd power supply layer 1503 has conduction
Property, there is chemical stability, and as being such as used in p side current electrode 152 and outside
Electrical connection surface layer and function.
It addition, in present embodiment, p side connects electrode 154, circular in shape time viewed from above
(with reference to Fig. 1), its diameter is about 10 μm, has along with close to p side transparency conducting layer 151 diameter
The cross sectional shape of the taper diminished.And, p side connects the angle of inclination of the sidewall of electrode 154 and is about
80°。
＜ n side power supply section ＞
Fig. 6 is the figure of an example of the composition representing the n side power supply section 160 in embodiment 1.Furthermore,
Fig. 6 represents that the current electrode 162 and n side, region VI i.e. n side shown in Fig. 3 connects electrode 164
The amplification sectional view of boundary portion.But, it is connected electrode 164 with n side current electrode 162 and n side
Constitute the n side auxiliary electrode 163 of n side power supply section 160 together, be located at auxiliary electrode 163 side, n side
N side connect electrode 164(with reference to Fig. 3) also have and be commonly constructed with these electrodes.
［ n side current electrode, n side auxiliary electrode and n side connect electrode ］
N side current electrode 162, n side auxiliary electrode 163 and n side in n side power supply section 160 connect
Receiving electrode 164, by contacting from close to the n in the n-type semiconductor layer 120 becoming connecting object
The side of layer 121 start to be sequentially laminated n side the 1st power supply layer 1601, n side the 2nd power supply layer 1602,
Constitute with n side the 3rd power supply layer 1603.In present embodiment, n side the 1st power supply layer 1601 by
TaN is constituted, and n side the 2nd power supply layer 1602 is made up of Pt, and n side the 3rd power supply layer 1603 is by Au
Constitute.It addition, the thickness of n side the 1st power supply layer 1601 is about 1nm, n side the 2nd power supply layer
The thickness of 1602 be the thickness of about 100nm, n side the 3rd power supply layer 1603 be about 1000nm.
Wherein, n side the 1st power supply layer 1601 has electric conductivity, and as improving with power supply absolutely
The adhesive layer of the adherence of edge layer 170 and function.It addition, n side the 2nd power supply layer 1602 has
Electric conductivity, as preventing the TaN constituting n side the 1st power supply layer 1601 to n side the 3rd power supply layer 1603
Side is spread and prevents the Au constituting n side the 3rd power supply layer 1603 to n side the 1st power supply layer 1601
What side was spread prevents diffusion layer function.And, n side the 3rd power supply layer 1603 has electric conductivity,
There is chemical stability, and as being such as used in n side current electrode 162 and outside electrical connection
Surface layer and function.
So, in present embodiment, the p side current electrode 152 in p side power supply section 150, p side are auxiliary
Electrode 153 and p side is helped to connect the n side current electrode in electrode 154 and n side power supply section 160
162, n side auxiliary electrode 163 and n side connects electrode 164 and has and be commonly constructed.
It addition, in present embodiment, n side connects electrode 164, is substantially semi-circular time viewed from above
Shape (with reference to Fig. 1), the diameter of its half-round is about 10 μm, has along with close to n contact layer 121
The cross sectional shape of the taper that its diameter diminishes.And, n side connects the inclination angle of the sidewall of electrode 164
Degree is about 80 °.
＜ is for electric insulation layer ＞
In present embodiment, as the confession electric insulation layer 170 of an example of the 1st transparent insulating layer, have
Relative to the transmittance of the light exported from luminescent layer 130 and p side power supply section 150 and n side is powered
The insulating properties of portion 160 electric insulation.As constituting the material for electric insulation layer 170, it is possible to use such as
SiO2(silicon oxide), MgF2(Afluon (Asta)), CaF2(calcium fluoride), Si3N4(silicon nitride), Al2O3
(aluminium oxide).Furthermore, in this example, as electric insulation layer 170, employ insulating properties height, folding
Rate of penetrating little (1.4～1.5) and the SiO of excellent moisture resistance2(silicon dioxide).
It addition, the confession electric insulation layer 170 of present embodiment, not only by p side power supply section 150 and n side
Power supply section 160 electric insulation, also has and p-type semiconductor layer 140 and luminescent layer 130 and n side is supplied
The function of electricity portion 160 electric insulation.And, also have for electric insulation layer 170 and make from p side power supply section 150
The scattered function of confession electric position to p-type semiconductor layer 140.
＜ protects insulating barrier ＞
In present embodiment, as the protection insulating barrier 180 of an example of the 2nd transparent insulating layer, with confession
Electric insulation layer 170 similarly, have relative to the light exported from luminescent layer 130 transmittance and
Insulating properties by p side power supply section 150 and n side power supply section 160 electric insulation.As constituting protection insulation
The material of layer 180, it is possible to use such as SiO2(silicon oxide), MgF2(Afluon (Asta)), CaF2(fluorine
Change calcium), Si3N4(silicon nitride), Al2O3(aluminium oxide).Furthermore, in this example, as protection absolutely
Edge layer 180, employs the SiO identical with for electric insulation layer 1702(silicon dioxide).
Fig. 7 is to represent for electric insulation layer 170 and the figure of an example of the composition of protection insulating barrier 180.
Here, Fig. 7 (a) is the amplification sectional view of the region VIIa in Fig. 3, represents and is layered in p
Confession electric insulation layer 170 under on side transparency conducting layer 151 and n side auxiliary electrode 163.Furthermore,
Fig. 7 (a) is exemplified with the position of the downside becoming n side auxiliary electrode 163, but p side transparency conducting layer
Between 151 and p side current electrode 152 or p side auxiliary electrodes 153, and p side transparency conducting layer
Also the structure identical with Fig. 7 (a) is become between 151 and n side current electrodes 162.
On the other hand, Fig. 7 (b) is the amplification sectional view of the region VIIb in Fig. 3, represents at p
On side transparency conducting layer 151, be formed without p side current electrode 152, p side auxiliary electrode 153,
The confession electric insulation layer of the position stacking continuously of n side current electrode 162 and n side auxiliary electrode 163
170 and protection insulating barrier 180.Furthermore, in Fig. 7 (b), become on protection insulating barrier 180
Outside (the encapsulation (sealing) of such as air or light-emitting device described later 30 of semiconductor light-emitting elements 1
Portion 34 etc.).
Here, the thickness for electric insulation layer 170 is designated as the 1st thickness t1, will protection insulating barrier 180
Thickness be designated as the 2nd thickness t2, by the 1st thickness t1 and the 2nd thickness t2 and be designated as the 3rd thickness
T3(=t1+t2).In present embodiment, the 1st thickness t1, from the light exported by luminescent layer 130
Wavelength under be susceptible to total reflection value in select.On the other hand, the 3rd thickness t3 is from by luminescence
It is difficult in the value occurring to be totally reflected select, based on the selected the 3rd under the wavelength of the light of layer 130 output
Thickness t3 and the difference of the 1st thickness t1, set the value of the 2nd thickness t2.Therefore, in present embodiment,
1st thickness t1 and the 3rd thickness t3 must have the relation of t1 ＜ t3.Furthermore, in present embodiment,
The wavelength of the light by exporting from luminescent layer 130 is 450nm, and, for electric insulation layer 170 and
Protection insulating barrier 180 has above-mentioned refractive index, and the 1st thickness t1 is set to 390nm, and the 3rd is thick
Degree t3 is set to 468nm.Therefore, the 2nd thickness t2 is 78nm.
(light-emitting device)
Fig. 8 is the structure representing the light-emitting device 30 being equipped with the shown semiconductor light-emitting elements 1 such as Fig. 1
The figure of the example become.Here, Fig. 8 (a) represents the top view of light-emitting device 30, and Fig. 8 (b) is
The VIIIB-VIIIB sectional view of Fig. 8 (a).Furthermore, the light-emitting device 30 shown in Fig. 8 sometimes by
It is referred to as " luminescence chip " or " lamp ".
This light-emitting device 30 has: be formed with the basket 31 of recess 31a in a side side；By being formed at
P the leading part 32 and n leading part 33 that lead frame on basket 31 is constituted；It is arranged on recess 31a
The semiconductor light-emitting elements 1 of bottom surface；With the encapsulation part 34 arranged in the way of covering recess 31a.
Furthermore, in Fig. 8 (a), eliminate the record of encapsulation part 34.
As the basket 31 of an example of base portion, it is by drawing at the p of the example comprised as the 2nd distribution
Line portion 32 and as the 1st distribution an example n leading part 33 metal lead wire portion by white heat
Plastic resin carries out injection moulding and is formed.
P leading part 32 and n leading part 33 is the metallic plate of the thickness with 0.1～about 0.5mm,
Be with as machinability, metal that heat conductivity is excellent such as ferrum/copper alloy is as matrix, thereon
Constitute as the nickel of coating stacking number μm, titanium, gold, silver etc..And, in present embodiment,
A part for p leading part 32 and n leading part 33, exposes in the bottom surface of recess 31a.It addition, p
The outside of the lateral basket of one end 31 of leading part 32 and n leading part 33 is exposed, and from basket
The outside wall surface of 31 rearwardly side warpage.
It addition, semiconductor light-emitting elements 1, via substrate 110(with reference to Fig. 2), pacified by bonding etc.
It is contained in the central part of the bottom of recess 31a.And, in p leading part 32 and semiconductor light-emitting elements 1
P side current electrode 152(with reference to Fig. 1), utilize not shown closing line to electrically connect, n leading part
33 and semiconductor light-emitting elements 1 in n side current electrode 162(with reference to Fig. 1), utilize not shown
Closing line electrically connects.
And, encapsulation part 34, the transparent resin high by light transmission under the wavelength of viewing area is constituted.
As the resin meeting the high characteristic of thermostability, against weather and mechanical strength of composition encapsulation part 34,
Such as epoxy resin, silicones can be used.And, in present embodiment, constituting encapsulation part 34
Transparent resin in containing making the part of light from semiconductor light-emitting elements 1 injection be transformed into green light
And the fluorophor of red light.Furthermore, it is also possible to replace such fluorophor, containing by blue light
A part is transformed into the fluorophor of sodium yellow or a part for blue light is transformed into sodium yellow and red
The fluorophor of coloured light.It addition, as encapsulation part 34, it is possible to use do not contain the transparent tree of fluorophor
Fat.
Furthermore, it is assembled with the backlight of light-emitting device 30 of present embodiment, pocket telephone, shows
Show the electronic equipment of device, various panel class, computer, game machine, illumination etc., be assembled with these electricity
The machinery of the automobile etc. of subset, possesses the semiconductor light-emitting elements of the characteristics of luminescence with excellence
1.The especially battery in backlight, pocket telephone, display, game machine, illumination etc. drives
Electronic equipment aspect, using the teaching of the invention it is possible to provide possess the semiconductor light-emitting elements 1 of the characteristics of luminescence with excellence
Product, the most preferably.It addition, possess the composition of the light-emitting device 30 of semiconductor light-emitting elements 1,
It is not limited to the structure shown in Fig. 8, such as, can also be the encapsulation that have employed and be referred to as bullet cut
(package) structure constituted.
Below, to the light-emitting device 30 shown in Fig. 8 and be assembled in this enforcement in light-emitting device 30
The light-emission operation of the semiconductor light-emitting elements 1 of mode illustrates.
In light-emitting device 30, if semiconductor light-emitting elements 1 being circulated from p leading part 32 towards n
The electric current of leading part 33, then in semiconductor light-emitting elements 1, from p side power supply section 150 via p
Type semiconductor layer 140, luminescent layer 130 and n-type semiconductor layer 120(from n cover layer 122 to n
Contact layer 121) circulate the electric current towards n side power supply section 160.Now, at p side power supply section 150
In, electric current is direct or auxiliary via auxiliary electrode 153(p side the 1st, p side from p side current electrode 152
Help electrode 153a and p side the 2nd auxiliary electrode 153b) supply to 7 p sides connection electrodes 154,
Electric current connects electrode 154 via p side transparency conducting layer 151 to p-type semiconductor layer 140 from each p side
Flowing.On the other hand, in n side power supply section 160, electric current n from n-type semiconductor layer 120
Contact layer 121 connects electrode 164 to 3 n sides and flows, and electric current is from two n sides among these even
Receiving electrode 164 is via n side auxiliary electrode 163, and connects electrode 164 from a remaining n side
Directly flow to n side current electrode 162.Accompanying with this, luminescent layer 130 output forms phase with it
The light (such as blue light) answered.
And, from the light of luminescent layer 130 output, exported to the outside of semiconductor light-emitting elements 1,
Fluorophor included in the packed portion of one part 34 is transformed into other colors (red and green).
Thereafter, comprise the light of blue light, green light and red light, directly or by being located at the recessed of basket 31
From the upper surface of encapsulation part 34 to the outside output of light-emitting device 30 after the internal face reflection of portion 31a.
It follows that in the shown semiconductor light-emitting elements 1 such as Fig. 1, export from luminescent layer 130
The action of light illustrate.
In semiconductor light-emitting elements 1, mainly export towards p-type semiconductor layer 140 from luminescent layer 130
The light of side and the light towards n-type semiconductor layer 120 side.
Wherein, from luminescent layer 130 towards the light of n-type semiconductor layer 120 side, such as at n contact layer
121(is actual is basal layer) and the boundary portion of substrate 110, due to both difference of refractive index and quilt
Reflection.It addition, the light entered in substrate 110, at substrate 110 and p leading part 32, n lead-in wire
The boundary portion in portion 33 is reflected.And, the light of these reflections is partly led towards p-type via luminescent layer 130
Body layer 140 side.
It addition, from luminescent layer 130 towards the light of p-type semiconductor layer 140 side, via p-type semiconductor
Layer 140 and p side transparency conducting layer 151 and arrive for electric insulation layer 170.Here, arrival becomes p
Light beyond the position of the lower section of side current electrode 152 and p side auxiliary electrode 153, by by phase
Penetrate to outside for electric insulation layer 170 and protection insulating barrier 180 with what material was constituted.With this phase
Right, arrive the light at the position of the lower section becoming p side current electrode 152 and p side auxiliary electrode 153,
It is powered insulating barrier 170 to reflect, and via p side transparency conducting layer 151 and p-type semiconductor layer 140
And towards luminescent layer 130 side.And, arrive luminescent layer 130 by being powered insulating barrier 170 and reflecting
Light, with from luminescent layer 130 towards together with the light of n-type semiconductor layer 120 towards substrate 110 skidding
Enter, then, reflected during as described above, again via luminescent layer 130 towards p-type half
Conductor layer 140 skidding enters, via p side transparency conducting layer 151, for electric insulation layer 170 and protection
Insulating barrier 180 penetrates to outside.
Here, in present embodiment, in n side power supply section 160, n side current electrode 162 and n
It is connected also that multiple n sides that contact layer 121 is arranged via running through luminescent layer 130 connect electrode 164
Thus turn on.Now, by multiple n sides connection n side auxiliary electrode 163 of electrically connecting of electrode 164 with
And n side current electrode 162, the rear side being located at p-type semiconductor layer 140 is observed from luminescent layer 130,
Therefore, at the lower section of n side auxiliary electrode 163 and the overall model of the lower section of n side current electrode 162
In enclosing, it is not necessary to ream luminescent layer 130.Therefore, it is possible to suppress semiconductor light-emitting elements 1 of the same area
In the minimizing of area of luminescent layer 130, as a result, it is possible to the reduction of light quantity of suppression output.
And, in present embodiment, above p-type semiconductor layer 140, at p side power supply section 150
In p side current electrode 152 and p side auxiliary electrode 153(p side the 1st auxiliary electrode 153a with
And p side the 2nd auxiliary electrode 153b) lower section (but, except p side connect electrode 154 formation
Beyond position) and n side power supply section 160 in n side current electrode 162 and n side auxiliary electrode 163
Lower section (but, in addition to the forming part that n side connects electrode 164) upper setting be set to
1st thickness t1 supplies electric insulation layer 170, thus, makes from luminescent layer 130 towards each part mentioned above
Light is powered insulating barrier 170 and reflects.Thus, the light from luminescent layer 130 output is difficult to by above-mentioned each portion
Divide and absorb, it is possible to the minimizing of the light quantity of suppression output further.Especially, in present embodiment, make
For adhesive layer (p side the 1st power supply layer 1501 in p side power supply section 150 and n side power supply section 160
And n side the 1st power supply layer 1601) use in dark brown or the TaN of black, easily absorb from luminescence
The light of layer 130 output, therefore, the application of such composition is the most effective.
And, in present embodiment, above p-type semiconductor layer 140, supply not becoming p side
Electricity electrode 152, p side auxiliary electrode 153, n side current electrode 162 and n side auxiliary electrode 163
The position of lower section, continuous stacking is powered insulating barrier 170 and protection insulating barrier 180 and is become the 3rd
Thickness t3, thus, makes from luminescent layer 130 towards these confession electric insulation layers 170 of the light transmission at these positions
And protection insulating barrier 180.Thus, easily export to outside from the light of luminescent layer 130 output, energy
The reduction of the light quantity of the enough output of suppression further.
Additionally, in present embodiment, to comprise III nitride semiconductor as compound semiconductor
Semiconductor light-emitting elements 1 as a example by be illustrated, but be not limited to this, it is also possible to for comprising III-V
Race's quasiconductor or the element of II-VI group quasiconductor.
It addition, in present embodiment, identical for electric insulation layer 170 and protection insulating barrier 180
Material (SiO2(silicon dioxide)) but it also may use respectively different material.In the case of Gai,
In the region (with reference to Fig. 7 (b)) the most overlapping for electric insulation layer 170 and protection insulating barrier 180,
The 1st thickness t1 and the protection for electric insulation layer 170 is selected respectively from the size being difficult to generation total reflection
2nd thickness t2 of insulating barrier 180.
Description of reference numerals
1 ... semiconductor light-emitting elements, 30 ... light-emitting device, 110 ... substrate, 120 ... n-type semiconductor layer,
121 ... n contact layer, 122 ... n cover layer, 130 ... luminescent layer, 140 ... p-type semiconductor layer, 150 ... p
Side power supply section, 151 ... p side transparency conducting layer, 152 ... p side current electrode, 153 ... p side auxiliary electricity
Pole, 153a ... p side the 1st auxiliary electrode, 153b ... p side the 2nd auxiliary electrode, 154 ... p side connects
Electrode, 160 ... n side power supply section, 162 ... n side current electrode, 163 ... n side auxiliary electrode, 164 ... n
Side connection electrode, 170 ... confession electric insulation layer, 180 ... protection insulating barrier, 1501 ... p side the 1st powers
Layer, 1502 ... p side the 2nd power supply layer, 1503 ... p side the 3rd power supply layer, 1601 ... n side the 1st powers
Layer, 1602 ... n side the 2nd power supply layer, 1603 ... n side the 3rd power supply layer, t1 ... the 1st thickness, t2 ...
2nd thickness, t3 ... the 3rd thickness.
Claims (6)
1. a semiconductor light-emitting elements, it is characterised in that possess:
The 1st semiconductor layer being made up of the compound semiconductor with the 1st conduction type；
Described 1st semiconductor layer is placed in contact with the 1st semiconductor layer, compound partly leads
Body is constituted and the luminescent layer of luminescence by energising；
It is placed in contact with this luminescent layer on the light-emitting layer, by having and described 1st conduction type
The 2nd semiconductor layer that the compound semiconductor of the 2nd different conduction types is constituted；
The rear side being located at described 2nd semiconductor layer is observed, by for from this luminescence from described luminescent layer
The light of the wavelength of layer output has radioparent insulant and constitutes, and is set to the 1st of the 1st thickness the
Transparent insulating layer；
Observe the rear side being located at described 1st transparent insulating layer from described luminescent layer, be made up of also metal
And the 1st current electrode electrically connected with described 1st semiconductor layer；
Observe the rear side being located at described 1st transparent insulating layer from described luminescent layer, be made up of also metal
And the 2nd current electrode electrically connected with described 2nd semiconductor layer；With
The rear side being located at described 1st transparent insulating layer is observed, by for from this from described luminescent layer
The light of wavelength of photosphere output has radioparent insulant and constitutes, and is set to the of the 2nd thickness
2 transparent insulating layers,
Described 1st thickness is set as, and the light of the wavelength exported from described luminescent layer is easily reflected big
It is little,
Described 1st thickness is set as from described luminescence plus the 3rd thickness of described 2nd thickness gained
The size that the light of the wavelength of layer output is easily transmitted.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that also have:
Via running through described 1st transparent insulating layer, described 2nd semiconductor layer and described luminescent layer
1st connection electrode of the 1st semiconductor layer electrical connection described in Kong Eryu；With
Observe the rear side being located at the 1st transparent insulating layer from this luminescent layer, connect electrode by the 1st
The 1st auxiliary electrode electrically connected with described 1st current electrode,
Described 2nd transparent insulating layer is arranged in the way of covering described 1st auxiliary electrode.
Semiconductor light-emitting elements the most according to claim 1 and 2, it is characterised in that also have:
Via running through the of the 2nd semiconductor layer electrical connection described in the Kong Eryu of described 1st transparent insulating layer
2 connect electrode；With
Observe the rear side being located at the 1st transparent insulating layer from described luminescent layer, connect electricity by the 2nd
Pole and the 2nd auxiliary electrode of described 2nd current electrode electrical connection,
Described 2nd transparent insulating layer is arranged in the way of covering described 2nd auxiliary electrode.
Semiconductor light-emitting elements the most according to claim 1 and 2, it is characterised in that described
1 transparent insulating layer and described 2nd transparent insulating layer are constructed from the same material.
Semiconductor light-emitting elements the most according to claim 1 and 2, it is characterised in that describedization
Compound quasiconductor includes III nitride semiconductor,
Described 1st semiconductor layer is directly or across other layer stackup on substrate.
6. a light-emitting device, it is characterised in that including:
It is formed with the 1st distribution and the base portion of the 2nd distribution；With
The semiconductor light-emitting elements connected upward for this base surface,
Described semiconductor light-emitting elements, possesses:
The 1st semiconductor layer being made up of the compound semiconductor with the 1st conduction type；
Described 1st semiconductor layer is placed in contact with the 1st semiconductor layer, compound partly leads
Body is constituted and the luminescent layer of luminescence by energising；
It is placed in contact with this luminescent layer on the light-emitting layer, by having and described 1st conduction type
The 2nd semiconductor layer that the compound semiconductor of the 2nd different conduction types is constituted；
The rear side being located at described 2nd semiconductor layer is observed, by for from this luminescence from described luminescent layer
The light of the wavelength of layer output has radioparent insulant and constitutes, and is set to the 1st of the 1st thickness the
Transparent insulating layer；
Observe the rear side being located at described 1st transparent insulating layer from described luminescent layer, be made up of also metal
And electrically connect with described 1st semiconductor layer and be electrically connected with described 1st distribution being located at described base portion
The 1st current electrode connect；
Observe the rear side being located at described 1st transparent insulating layer from described luminescent layer, be made up of also metal
And electrically connect with described 2nd semiconductor layer and be electrically connected with described 2nd distribution being located at described base portion
The 2nd current electrode connect；With
The rear side being located at described 1st transparent insulating layer is observed, by for from this from described luminescent layer
The light of wavelength of photosphere output has radioparent insulant and constitutes, and is set to the of the 2nd thickness
2 transparent insulating layers,
Described 1st thickness is set as, and the light of the wavelength exported from described luminescent layer is easily reflected big
It is little,
Described 1st thickness is set as from described luminescence plus the 3rd thickness of described 2nd thickness gained
The size that the light of the wavelength of layer output is easily transmitted.
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| JP2012250681A JP5971090B2 (en) | 2012-11-14 | 2012-11-14 | Semiconductor light emitting element and light emitting device |
| JP250681/2012 | 2012-11-14 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237013A (en) * | 2007-02-01 | 2008-08-06 | 日亚化学工业株式会社 | Semiconductor light emitting element |
| CN102738348A (en) * | 2011-04-08 | 2012-10-17 | 日亚化学工业株式会社 | Semiconductor light emitting device |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237013A (en) * | 2007-02-01 | 2008-08-06 | 日亚化学工业株式会社 | Semiconductor light emitting element |
| CN102738348A (en) * | 2011-04-08 | 2012-10-17 | 日亚化学工业株式会社 | Semiconductor light emitting device |
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