CN103805198A - Lithium-copper co-doping yttrium oxysulfide light-emitting film and preparation method and application thereof - Google Patents

Lithium-copper co-doping yttrium oxysulfide light-emitting film and preparation method and application thereof Download PDF

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Publication number
CN103805198A
CN103805198A CN201210457175.6A CN201210457175A CN103805198A CN 103805198 A CN103805198 A CN 103805198A CN 201210457175 A CN201210457175 A CN 201210457175A CN 103805198 A CN103805198 A CN 103805198A
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copper
lithium
emitting film
yttrium oxysulfide
substrate
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周明杰
王平
陈吉星
黄辉
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Abstract

The invention relates to a lithium-copper co-doping yttrium oxysulfide light-emitting film. The chemical formula of the lithium-copper co-doping yttrium oxysulfide light-emitting film is Y2O2S:xLi<+>, yCu2<+>, wherein x is more than or equal to 0.01 and less than or equal to 0.05, y is more than or equal to 0.01 and less than or equal to 0.08, Y2O2S is a matrix, and a lithium element and a copper element are activated elements. The lithium-copper co-doping yttrium oxysulfide light-emitting film disclosed by the invention has very high light-emitting peaks on the 490 nanometer wavelength area and 510 nanometer wavelength area of an EL (Electroluminescent Spectrum), thereby being applied to a film electroluminescent display. The invention also provides a preparation method and application of the lithium-copper co-doping yttrium oxysulfide light-emitting film.

Description

Lithium copper codoped yttrium oxysulfide light-emitting film, preparation method and application thereof
[technical field]
The present invention relates to a kind of lithium copper codoped yttrium oxysulfide light-emitting film and preparation method thereof, membrane electro luminescent device and preparation method thereof.
[background technology]
Thin-film electroluminescent displays (TFELD), due to its active illuminating, total solids, the advantage such as shock-resistant, reaction is fast, visual angle is large, Applicable temperature is wide, operation is simple, has caused and paid close attention to widely, and development rapidly.At present, research colour and extremely panchromatic TFELD, the luminous film of exploitation multiband, is the developing direction of this problem.But, can be applicable to the lithium copper codoped yttrium oxysulfide light-emitting film of thin-film electroluminescent displays, have not yet to see report.
[summary of the invention]
Based on this, be necessary to provide a kind of lithium copper codoped yttrium oxysulfide light-emitting film that can be applicable to membrane electro luminescent device and preparation method thereof, membrane electro luminescent device and preparation method thereof.
A kind of lithium copper codoped yttrium oxysulfide light-emitting film, its chemical formula is Y 2o 2s:xLi +, yCu 2+, wherein, Y 2o 2s is matrix, and elemental lithium and copper are active elements, 0.01≤x≤0.05,0.01≤y≤0.08.
In a preferred embodiment, the thickness of lithium copper codoped yttrium oxysulfide light-emitting film is 80nm～300nm.
A preparation method for lithium copper codoped yttrium oxysulfide light-emitting film, comprises the following steps:
Substrate is packed in the reaction chamber of chemical vapor depsotition equipment, and the vacuum tightness of reaction chamber is set to 1.0 × 10 -2pa～1.0 × 10 -3pa;
Regulating substrate temperature is 250 ℃～650 ℃, and rotating speed is 50 revs/min～1000 revs/min, adopts the carrier of argon stream, according to Y 2o 2s:xLi +, yCu 2+the stoichiometric ratio of each element is by three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, and dipivaloylmethane lithium and diethyl copper pass in reaction chamber, and
Carrying out chemical vapour deposition, to obtain its chemical formula of lithium copper codoped yttrium oxysulfide light-emitting film be Y 2o 2s:xLi +, yCu 2+lithium copper codoped yttrium oxysulfide light-emitting film, wherein, Y 2o 2s is matrix, and elemental lithium and copper are active elements, 0.01≤x≤0.05,0.01≤y≤0.08.
In a preferred embodiment, three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, dipivaloylmethane lithium and diethyl copper mol ratio are 2: 1: (0.01～0.05): (0.01～0.05).
In a preferred embodiment, argon stream amount is 5～15sccm.
A kind of membrane electro luminescent device, this membrane electro luminescent device comprises the substrate, anode layer, luminescent layer and the cathode layer that stack gradually, the material of described luminescent layer is lithium copper codoped yttrium oxysulfide light-emitting film, and the chemical formula of this lithium copper codoped yttrium oxysulfide light-emitting film is Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements.
In a preferred embodiment, the thickness of luminescent layer is 80nm～300nm.
A preparation method for membrane electro luminescent device, comprises the following steps:
The substrate with anode is provided;
On described anode, form luminescent layer, the material of described luminescent layer is lithium copper codoped yttrium oxysulfide light-emitting film, and the chemical formula of this lithium copper codoped yttrium oxysulfide light-emitting film is Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements;
On described luminescent layer, form negative electrode.
In a preferred embodiment, the preparation of described luminescent layer comprises the following steps:
Substrate is packed in the reaction chamber of chemical vapor depsotition equipment, and the vacuum tightness of reaction chamber is set to 1.0 × 10 -2pa～1.0 × 10 -3pa;
Regulating substrate temperature is 250 ℃～650 ℃, and rotating speed is 50 revs/min～1000 revs/min, adopts the carrier of argon stream, according to Y 2o 2s:xLi +, yCu 2+the stoichiometric ratio of each element is by three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, and dipivaloylmethane lithium and diethyl copper pass in reaction chamber, and wherein, argon stream amount is 5～15sccm, and
Carrying out chemical vapour deposition, to obtain luminescent layer chemical formula be Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements.
Above-mentioned lithium copper codoped yttrium oxysulfide light-emitting film (Y 2o 2s:xLi +, yCu 2+) electroluminescent spectrum (EL) in, have very strong glow peak in 430nm wavelength zone, can be applied in thin-film electroluminescent displays.
[accompanying drawing explanation]
Fig. 1 is the structural representation of the membrane electro luminescent device of an embodiment;
Fig. 2 is the electroluminescent spectrogram of the lithium copper codoped yttrium oxysulfide light-emitting film prepared of embodiment 1;
Fig. 3 is the XRD figure of the lithium copper codoped yttrium oxysulfide light-emitting film prepared of embodiment 1;
Fig. 4 is voltage and electric current and the brightness relationship figure of the membrane electro luminescent device prepared of embodiment 1.
[embodiment]
Below in conjunction with the drawings and specific embodiments, lithium copper codoped yttrium oxysulfide light-emitting film, its preparation method and membrane electro luminescent device and preparation method thereof are further illustrated.
The lithium copper codoped yttrium oxysulfide light-emitting film of one embodiment, its chemical formula is Y 2o 2s:xLi +, yCu 2+, wherein, Y 2o 2s is matrix, and elemental lithium and copper are active elements, 0.01≤x≤0.05,0.01≤y≤0.08.
Preferably, the thickness of lithium copper codoped yttrium oxysulfide light-emitting film is 80nm～300nm, and x is that 0.02, y is 0.04.
In the electroluminescent spectrum (EL) of this lithium copper codoped yttrium oxysulfide light-emitting film, there is very strong glow peak in 430nm wavelength zone, can be applied in thin-film electroluminescent displays.
The preparation method of above-mentioned lithium copper codoped yttrium oxysulfide light-emitting film, comprises the following steps:
Step S11, substrate is packed in the reaction chamber of chemical vapor depsotition equipment, and the vacuum tightness of reaction chamber is set to 1.0 × 10 -2pa～1.0 × 10 -3pa.
In the present embodiment, substrate is indium tin oxide glass (ITO), be appreciated that in other embodiments, also can be for fluorine doped tin oxide glass (FTO), mix the zinc oxide (AZO) of aluminium or mix the zinc oxide (IZO) of indium; Substrate is successively with toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into reaction chamber.
Preferably, the vacuum tightness of reaction chamber is 4.0 × 10 -3pa.
Step S12, by substrate thermal treatment 10 minutes～30 minutes at 600 ℃～800 ℃.
Step S13, adjusting substrate temperature are 250 ℃～650 ℃, and rotating speed is 50 revs/min～1000 revs/min, adopts the carrier of argon stream, according to Y 2o 2s:xLi +, yCu 2+the stoichiometric ratio of each element is by three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, and dipivaloylmethane lithium and diethyl copper pass in reaction chamber.
In a preferred embodiment, three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, dipivaloylmethane lithium and diethyl copper mol ratio are 2: 1: (0.01～0.05): (0.01～0.05).
In a preferred embodiment, substrate temperature is preferably 500 ℃, and the rotating speed of substrate is preferably 300 revs/min, and argon stream amount is 5～15sccm.
In more preferred embodiment, argon stream amount is 10sccm.
Step S14, carrying out chemical vapour deposition, to obtain its chemical formula of lithium copper codoped yttrium oxysulfide light-emitting film be Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements.
In a preferred embodiment, x is that 0.02, y is 0.04.
After step S15, deposition, stop passing into three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, dipivaloylmethane lithium and diethyl copper and argon gas, make the temperature of lithium copper codoped yttrium oxysulfide light-emitting film be down to 80 ℃～150 ℃.
In present embodiment, preferred, make the temperature of lithium copper codoped yttrium oxysulfide light-emitting film be down to 100 ℃.
Be appreciated that step S12 and step S15 can omit.
Refer to Fig. 1, the membrane electro luminescent device 100 of an embodiment, this membrane electro luminescent device 100 comprises the substrate 1, anode 2, luminescent layer 3 and the negative electrode 4 that stack gradually.
Substrate 1 is glass substrate.Anode 2 is for being formed at the tin indium oxide (ITO) in glass substrate.The material of luminescent layer 3 is lithium copper codoped yttrium oxysulfide light-emitting film, and the chemical formula of this lithium copper codoped yttrium oxysulfide light-emitting film is Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements.The material of negative electrode 4 is silver (Ag).
The preparation method of above-mentioned membrane electro luminescent device, comprises the following steps:
Step S21, provide the substrate 1 with anode 2.
In present embodiment, substrate 1 is glass substrate, and anode 2 is for being formed at the tin indium oxide (ITO) in glass substrate.Be appreciated that in other embodiments, also can be for fluorine doped tin oxide glass (FTO), mix the zinc oxide (AZO) of aluminium or mix the zinc oxide (IZO) of indium; The substrate 1 with anode 2 is successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning and use it is carried out to oxygen plasma treatment.
Step S22, on anode 2, form luminescent layer 3, the material of luminescent layer 3 is lithium copper codoped yttrium oxysulfide light-emitting film, and the chemical formula of this lithium copper codoped yttrium oxysulfide light-emitting film is Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements.
In present embodiment, luminescent layer 3 is made by following steps:
First, substrate is packed in the reaction chamber of chemical vapor depsotition equipment, and the vacuum tightness of reaction chamber is set to 1.0 × 10 -2pa～1.0 × 10 -3pa,
Moreover, by substrate thermal treatment 10 minutes～30 minutes at 600 ℃～800 ℃.Also can be without this step.
Secondly, regulating substrate temperature is 250 ℃～650 ℃, and rotating speed is 50 revs/min～1000 revs/min, adopts the carrier of argon stream, according to Y 2o 2s:xLi +, yCu 2+the stoichiometric ratio of each element is by three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, and dipivaloylmethane lithium and diethyl copper pass in reaction chamber.
In a preferred embodiment, three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, dipivaloylmethane lithium and diethyl copper mol ratio are 2: 1: (0.01～0.05): (0.01～0.05).
In a preferred embodiment, substrate temperature is preferably 500 ℃, and the rotating speed of substrate is preferably 300 revs/min, and argon stream amount is 5～15sccm.
In more preferred embodiment, argon stream amount is 10sccm.
Carry out chemical vapour deposition film and form luminescent layer on described anode.
Finally, deposition after stop passing into three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, dipivaloylmethane lithium and diethyl copper and argon gas, make the temperature of lithium copper codoped yttrium oxysulfide light-emitting film be down to 80 ℃～150 ℃.
In present embodiment, preferred, make the temperature of lithium copper codoped yttrium oxysulfide light-emitting film be down to 100 ℃.Can be without this step.
Step S23, on luminescent layer 3, form negative electrode 4.
In present embodiment, the material of negative electrode 4 is silver (Ag), is formed by evaporation.
Be specific embodiment below.
Embodiment 1
Substrate is ito glass, successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 4.0 × 10 with mechanical pump and molecular pump -3pa; Then substrate is carried out to 700 ℃ of thermal treatments 20 minutes, then temperature is reduced to 500 ℃.Open rotating machine, regulating the rotating speed of substrate bracket is 300 revs/min, passes into organic source three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium (Y (DPM) 3), hydrogen sulfide (H 2s), the mol ratio of dipivaloylmethane lithium (Li (DPM)) and diethyl copper (DEZ) is 2: 1: 0.02: 0.04, gas of carrier gas is argon gas, argon stream amount is 10sccm.Start the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, and temperature drops to below 100 ℃, takes out sample Y 2o 2s:0.02Li +, 0.04Cu 2+.Finally evaporation one deck Ag on light-emitting film, as negative electrode.
The chemical general formula of the lithium copper codoped yttrium oxysulfide light-emitting film obtaining in the present embodiment is Y 2o 2s:0.02Li +, 0.04Cu 2+, wherein Y 2o 2s is matrix, and elemental lithium and copper are active elements.
Refer to Fig. 2, Figure 2 shows that the electroluminescence spectrum (EL) of the lithium copper codoped yttrium oxysulfide light-emitting film that embodiment 1 obtains.The electroluminescent spectral curve of the lithium copper codoped yttrium oxysulfide light-emitting film that as seen from Figure 2, embodiment 1 obtains has very strong glow peak can be applied in thin-film electroluminescent displays in 430nm wavelength zone.
Refer to Fig. 3, Fig. 3 is the XRD curve of the lithium copper codoped yttrium oxysulfide light-emitting film prepared of embodiment 1, test comparison standard P DF card.As can be seen from Figure 3 diffraction peak is depicted as the crystal orientation of yttrium oxysulfide, does not occur the diffraction peak of doped element and other impurity, illustrates that the method can obtain well-crystallized's sample.
Refer to Fig. 4, Fig. 4 is voltage and electric current and the brightness relationship figure of the membrane electro luminescent device prepared of embodiment 1, in accompanying drawing 4, curve 1 is voltage and current density relation curve, can find out that device can find out that device starts from 6.0V luminous, curve 2 is voltage and brightness relationship curve, and high-high brightness is 80cd/m 2, show that device has the good characteristics of luminescence.
Embodiment 2
Substrate is ito glass, successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump -3pa; Then substrate is carried out to 700 ℃ of thermal treatments 10 minutes, then temperature is reduced to 250 ℃.Open rotating machine, regulating the rotating speed of substrate bracket is 50 revs/min, passes into organic source three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium (Y (DPM) 3), hydrogen sulfide (H 2s), the mol ratio of dipivaloylmethane lithium (Li (DPM)) and diethyl copper (DEZ) is 2: 1: 0.05: 0.01, gas of carrier gas is argon gas, argon stream amount is 10sccm.Start the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, and temperature drops to below 100 ℃, takes out sample Y 2o 2s:0.05Li +, 0.01Cu 2+.Finally evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 3
Substrate is ito glass, successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump -2pa; Then substrate is carried out to 700 ℃ of thermal treatments 30 minutes, then temperature is reduced to 650 ℃.Open rotating machine, regulating the rotating speed of substrate bracket is 1000 revs/min, passes into organic source three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium (Y (DPM) 3), hydrogen sulfide (H 2s), the mol ratio of dipivaloylmethane lithium (Li (DPM)) and diethyl copper (DEZ) is 2: 1: 0.01: 0.08, gas of carrier gas is argon gas, argon stream amount is 10sccm.Start the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, and temperature drops to below 100 ℃, takes out sample Y 2o 2s:0.01xLi +, 0.08Cu 2+.Finally evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 4: substrate is ito glass, successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 4.0 × 10 with mechanical pump and molecular pump -3pa; Then substrate is carried out to 700 ℃ of thermal treatments 20 minutes, then temperature is reduced to 500 ℃.Open rotating machine, regulating the rotating speed of substrate bracket is 300 revs/min, passes into organic source three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium (Y (DPM) 3), hydrogen sulfide (H 2s), the mol ratio of dipivaloylmethane lithium (Li (DPM)) and diethyl copper (DEZ) is 2: 1: 0.03: 0.04, gas of carrier gas is argon gas, argon stream amount is 10sccm.Start the deposition of film.The thickness of film is deposited into 100nm, closes organic source and carrier gas, and temperature drops to below 100 ℃, takes out sample Y 2o 2s:0.03Li +, 0.04Cu 2+.Finally evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 5: substrate is the ito glass that Nan Bo company buys, successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump -3pa; Then substrate is carried out to 700 ℃ of thermal treatments 10 minutes, then temperature is reduced to 250 ℃.Open rotating machine, regulating the rotating speed of substrate bracket is 50 revs/min, passes into organic source three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium (Y (DPM) 3), hydrogen sulfide (H 2s), the mol ratio of dipivaloylmethane lithium (Li (DPM)) and diethyl copper (DEZ) is 2: 1: 0.02: 0.05, gas of carrier gas is argon gas, argon stream amount is the deposition that 10sccm starts film.The thickness of film is deposited into 200nm, closes organic source and carrier gas, and temperature drops to below 100 ℃, takes out sample Y 2o 2s:0.02Li +, 0.05Cu 2+.Finally evaporation one deck Ag on light-emitting film, as negative electrode.
Embodiment 6: substrate is the ito glass that Nan Bo company buys, successively uses toluene, acetone and ethanol ultrasonic cleaning 5 minutes, then clean with distilled water flushing, after nitrogen is air-dry, sends into equipment reaction chamber.The vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump -2pa; Then substrate is carried out to 700 ℃ of thermal treatments 30 minutes, then temperature is reduced to 650 ℃.Open rotating machine, regulating the rotating speed of substrate bracket is 1000 revs/min, passes into organic source three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium (Y (DPM) 3), hydrogen sulfide (H 2s), the mol ratio of dipivaloylmethane lithium (Li (DPM)) and diethyl copper (DEZ) is 2: 1: 0.04: 0.07, gas of carrier gas is argon gas, argon stream amount is 10sccm.Start the deposition of film.The thickness of film is deposited into 250nm, closes organic source and carrier gas, and temperature drops to below 100 ℃, takes out sample Y 2o 2s:xLi +, yCu 2+.Finally evaporation one deck Ag on light-emitting film, as negative electrode.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (10)

1. a lithium copper codoped yttrium oxysulfide light-emitting film, is characterized in that, its chemical formula is Y 2o 2s:xLi +, yCu 2+, wherein, Y 2o 2s is matrix, and elemental lithium and copper are active elements, 0.01≤x≤0.05,0.01≤y≤0.08.
2. lithium copper codoped yttrium oxysulfide light-emitting film according to claim 1, is characterized in that, the thickness of described lithium copper codoped yttrium oxysulfide light-emitting film is 80nm～300nm.
3. a preparation method for lithium copper codoped yttrium oxysulfide light-emitting film, is characterized in that, comprises the following steps:
Substrate is packed in the reaction chamber of chemical vapor depsotition equipment, and the vacuum tightness of reaction chamber is set to 1.0 × 10 -2pa～1.0 × 10 -3pa;
Regulating substrate temperature is 250 ℃～650 ℃, and rotating speed is 50 revs/min～1000 revs/min, adopts the carrier of argon stream, according to Y 2o 2s:xLi +, yCu 2+the stoichiometric ratio of each element is by three (2,2,6,6-tetramethyl--3, the acid of 5-heptadione) yttrium, hydrogen sulfide, and dipivaloylmethane lithium and diethyl copper pass in reaction chamber; And
Carrying out chemical vapour deposition, to obtain chemical formula be Y 2o 2s:xLi +, yCu 2+lithium copper codoped yttrium oxysulfide light-emitting film, wherein, Y 2o 2s is matrix, and elemental lithium and copper are active elements, 0.01≤x≤0.05,0.01≤y≤0.08.
4. the preparation method of lithium copper codoped yttrium oxysulfide light-emitting film according to claim 3, it is characterized in that, described three (2,2,6,6-tetramethyl--3,5-heptadione acid) yttrium, hydrogen sulfide, dipivaloylmethane lithium and diethyl copper mol ratio are 2: 1: (0.01～0.05): (0.01～0.05).
5. the preparation method of lithium copper codoped yttrium oxysulfide light-emitting film according to claim 3, is characterized in that, described argon stream amount is 5～15sccm.
6. the preparation method of lithium copper codoped yttrium oxysulfide light-emitting film according to claim 3, is characterized in that, described substrate is packed into after described reaction chamber the thermal treatment 10 minutes～30 minutes at 600 ℃～800 ℃ of described substrate.
7. a membrane electro luminescent device, this membrane electro luminescent device comprises the substrate, anode layer, luminescent layer and the cathode layer that stack gradually, it is characterized in that, the material of described luminescent layer is lithium copper codoped yttrium oxysulfide light-emitting film, and the chemical formula of this lithium copper codoped yttrium oxysulfide light-emitting film is Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements.
8. membrane electro luminescent device according to claim 7, is characterized in that, the thickness of described luminescent layer is 80nm～300nm.
9. a preparation method for membrane electro luminescent device, is characterized in that, comprises the following steps:
The substrate with anode is provided;
On described anode, form luminescent layer, the film of described luminescent layer is lithium copper codoped yttrium oxysulfide light-emitting film, and the chemical formula of this lithium copper codoped yttrium oxysulfide light-emitting film is Y 2o 2s:xLi +, yCu 2+, wherein, 0.01≤x≤0.05,0.01≤y≤0.08, Y 2o 2s is matrix, and elemental lithium and copper are active elements;
On described luminescent layer, form negative electrode.
10. the preparation method of membrane electro luminescent device according to claim 9, is characterized in that, the preparation of described luminescent layer comprises the following steps:
Described substrate is packed into the reaction chamber of chemical vapor depsotition equipment, and the vacuum tightness of reaction chamber is set to 1.0 × 10 -2pa～1.0 × 10 -3pa;
Regulating substrate temperature is 250 ℃～650 ℃, and rotating speed is 50 revs/min～1000 revs/min, adopts argon stream as carrier, according to Y 2o 2s:xLi +, yCu 2+the stoichiometric ratio of each element is by three (2,2,6,6-tetramethyl--3,5-heptadione acid) yttrium, hydrogen sulfide, dipivaloylmethane lithium and diethyl copper pass in reaction chamber, wherein, argon stream amount is 5～15sccm, and deposit film forms luminescent layer on described anode.
CN201210457175.6A 2012-11-14 2012-11-14 Lithium-copper co-doping yttrium oxysulfide light-emitting film and preparation method and application thereof Pending CN103805198A (en)

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Application publication date: 20140521