Summary of the invention
For the problems referred to above, the invention provides a kind of electronic component, monolithic ceramic capacitor and manufacture method thereof.
Cording of the present invention has the manufacture method of the electronic component of interior electrode layer 12 and dielectric layer 10, system comprises: form and contain the processing procedure that burns till front internal electrode film 12a that electric conductor composition and dielectric become point, make to become after burning till the life embryo thin slice 10a of dielectric layer 10 and the processing procedure of aforementioned internal electrode film 12a lamination, by the processing procedure of the laminate sintering of aforementioned raw embryo thin slice 10a and aforementioned internal electrode film 12a, provide: even if divide the situation of other thin thickness stratification at interior electrode layer, the grain of the electric conductor particle also can suppress to burn till the stage time is grown up, effectively prevent the spheroidizing of interior electrode layer, electrode interrupts, can effectively suppress electronic component and the manufacture method thereof of low monolithic ceramic capacitor of static capacity etc.
Embodiment
Electronic component, monolithic ceramic capacitor manufacture method, have interior electrode layer and dielectric layer, it is characterized in that comprising: form and contain the processing procedure that burns till front internal electrode film that electric conductor composition and dielectric become point; Make to become after burning till the life embryo thin slice of dielectric layer and the processing procedure of aforementioned internal electrode thin film lamination; And the processing procedure that aforementioned raw embryo thin slice and the aforementioned laminate that burns till front internal electrode film are burnt till; Aforementionedly burn till the amount that aforementioned dielectric in front internal electrode film becomes point, to burn till front internal electrode film all with respect to aforementioned, large and below 0.8mol% compared with 0mol%, a kind of manufacture method of electronic component, there is interior electrode layer and dielectric layer, it is characterized in that comprising: form and contain the processing procedure that burns till front internal electrode film that electric conductor composition and dielectric become point; Make to become after burning till the life embryo thin slice of dielectric layer and the processing procedure of aforementioned internal electrode thin film lamination; And the processing procedure that aforementioned raw embryo thin slice and the aforementioned laminate that burns till front internal electrode film are burnt till; Aforementionedly burn till the amount that aforementioned dielectric in front internal electrode film becomes point, to burn till front internal electrode film all with respect to aforementioned, large and below 3wt% compared with 0wt%.Before aforementioned burn till in front internal electrode film, state dielectric composition and at least comprise BaTiO3, MgO, Al2O3, SiO2, CaO, TiO2, V2O3, MnO, SrO, Y2O3, ZrO2, Nb2O5, BaO, HfO2, La2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, at least one in CaTiO3 and SrTiO3, the aforementioned thickness that burns till front internal electrode film is 0.1~1.0 to form the aforementioned front internal electrode film that burns till with film-shaped established law, aforementioned film-shaped becomes genealogy of law sputtering method, vapour deposition method, or dispersion galvanoplastic, by metal material and the inorganic matter sputter simultaneously that will form aforementioned electric conductor composition and aforementioned dielectric and become point, form the aforementioned front internal electrode film that burns till, while carrying out aforementioned sputter, use inert gas as importing gas, it is 0.01~2Pa that the gas of aforementioned inert gas imports pressure, be contained in aforementioned dielectric composition and the aforementioned raw embryo thin slice that burns till front internal electrode film, contain in fact respectively the dielectric of same composition, being contained in the average grain diameter that the aforementioned dielectric that burns till front internal electrode film becomes point is 1~10nm, be contained in the aforementioned electric conductor composition that burns till front internal electrode film, system is take nickel and/or nickel alloy as principal component, aforementioned laminate ties up in the atmosphere of the oxygen partial pressure with 10-10~10-2Pa, temperature at 1000 ℃~1300 ℃ is burnt till, after burning till aforementioned laminate, in the atmosphere of oxygen partial pressure with 10-2~100Pa, at the annealing temperature of 1200 ℃, a kind of manufacture method of monolithic ceramic capacitor, there is the component body of the mutual lamination of interior electrode layer and dielectric layer, it is characterized in that comprising: form and contain the processing procedure that burns till front internal electrode film that electric conductor composition and dielectric become point, make to become after burning till the life embryo thin slice of dielectric layer and the processing procedure of the mutual lamination of aforementioned internal electrode film, and the processing procedure that aforementioned raw embryo thin slice and the aforementioned laminate that burns till front internal electrode film are burnt till, aforementionedly burn till the amount that aforementioned dielectric in front internal electrode film becomes point, to burn till front internal electrode film all with respect to aforementioned, large and below 0.8mol% compared with 0mol%, there is the component body of the mutual lamination of interior electrode layer and dielectric layer, it is characterized in that comprising: form and contain the processing procedure that burns till front internal electrode film that electric conductor composition and dielectric become point, make to become after burning till the life embryo thin slice of dielectric layer and the processing procedure of the mutual lamination of aforementioned internal electrode film, and the processing procedure that aforementioned raw embryo thin slice and the aforementioned laminate that burns till front internal electrode film are burnt till, aforementionedly burn till the amount that aforementioned dielectric in front internal electrode film becomes point, to burn till front internal electrode film all with respect to aforementioned, large and below 3wt% compared with 0wt%.