CN103785945A

CN103785945A - Laser processing apparatus and method of establishing processing condition of substrate with pattern

Info

Publication number: CN103785945A
Application number: CN201310404347.8A
Authority: CN
Inventors: 五十川久司; 长友正平; 中谷郁祥; 木山直哉; 岩坪佑磨
Original assignee: Mitsuboshi Diamond Industrial Co Ltd
Current assignee: Mitsuboshi Diamond Industrial Co Ltd
Priority date: 2012-10-29
Filing date: 2013-09-03
Publication date: 2014-05-14
Anticipated expiration: 2033-09-03
Also published as: KR101854676B1; CN103785945B; KR20140057139A

Abstract

The invention provides a method of establishing processing conditions to enable single chip operation of a substrate with patterns. Laser is irradiated, in a disperse manner, along processing projected lines by processing marks formed on the substrate with patterns through unit pulse lights, and single chip operation of the substrate with patterns is achieved by crack extension processing enabling cracks of the processing marks. The method includes a step of crack extension processing serving as transient processing of a part of the substrate with patterns, and a step of obtaining an offset direction of an irradiation position of first profile specific laser by integrating pixel values of a first shooting image obtained in a shooting transient processing execution position in the processing direction of transient processing, under a state of focusing on the backside of the substrate with patterns.

Description

The processing conditions establishing method of laser processing device and attached pattern substrate

Technical field

The present invention has about a kind of whenever two dimension on substrate being configured repeatedly to the method for setting processing conditions when attached pattern substrate that multiple unit cell pattern form is cut apart, especially about the establishing method of the processing conditions of laser processing device.

Background technology

LED element is with following program manufacture, be about to the upper two dimension of the substrates (wafer, mother substrate) such as such as sapphire single crystals be concatenated to form attached pattern substrate (attached LED pattern substrate) that the unit cell pattern of LED element forms be called as be set as cancellate straight line cut apart that presumptive area is cut apart and singualtion (chip).Herein, straight line is by the region of narrow width of gap portion of two parts that is partitioned into LED element.

As the method in order to cut apart, the laser of the wide pulse ultrashort pulse light that is psec grade is irradiated along the condition of the discrete distribution of processing preset lines with the irradiated area of constituent parts pulsed light, the method that forms the starting point in order to cut apart along processing preset lines (generally speaking for straight line center) has whereby been known (for example,, with reference to patent documentation 1).The method disclosing at patent documentation 1, produces between the processing trace forming rive or the be full of cracks stretching, extension (slight crack stretching, extension) causing of splitting in the irradiated area of constituent parts pulsed light, along above-mentioned be full of cracks, substrate is cut apart, and realizes whereby singualtion.

At above-mentioned attached pattern substrate, generally speaking, dispose unit cell pattern along the direction parallel with the directional plane that is located at sapphire single crystallization base plate and the direction orthogonal with it.Therefore,, at above-mentioned attached pattern substrate, straight line extends in the direction parallel with directional plane and perpendicular direction.

The situation that the method that above-mentioned attached pattern substrate is disclosed with patent documentation 1 is cut apart, natural, irradiate laser along the straight line parallel with directional plane with the straight line vertical with directional plane.At said circumstances, follow the stretching, extension of be full of cracks from processing trace of Ear Mucosa Treated by He Ne Laser Irradiation, not only produce at the direction of illumination (scanning direction) of the laser of the bearing of trend of processing preset lines, also produce at the thickness direction of substrate.

But, irradiate the situation of laser along the straight line parallel with directional plane, be full of cracks processing in substrate thickness direction produces toward vertical direction from processing trace, with respect to this, irradiate the situation of laser along the straight line vertical with directional plane with same illumination condition, be full of cracks be not toward vertical direction but from vertical direction toward incline direction stretch difference, in experience, be known to.And, though the direction that above-mentioned be full of cracks is tilted is consistent in same wafer face, has and look each attached pattern substrate and different situations.

In addition, as the sapphire single crystallization base plate for attached pattern substrate, except use the face orientation of the crystal planes such as c face or a face consistent with interarea normal direction, also the substrate (being also called cut-off substrate) that the so-called angle of cut-off that uses the face orientation that makes these crystal planes in interarea using the direction vertical with directional plane as sloping shaft to tilt with respect to interarea normal direction is endowed, no matter but whether the inclination of above-mentioned be full of cracks of irradiating the situation of laser along the straight line vertical with directional plane is that cut-off substrate all can produce, this point is confirmed by the present inventor.

On the other hand, due to requirements such as the microminiaturization of LED element or the taking-up number liftings of substrate per unit area, the width of straight line is narrower better.But, be suitable for the situation of the method that patent documentation 1 discloses take the attached pattern substrate of the narrow width of above-mentioned straight line as object, at the straight line vertical with directional plane, the be full of cracks that likely causes slant dilation can not be parked in the width of this straight line and arrive the defect in the adjacent region as LED element.The generation of above-mentioned defect becomes the main cause that the productive rate of LED element is reduced, therefore not good.

In order to suppress the reduction of above-mentioned productive rate, in the time of the each attached pattern substrate of processing, the direction that specific be full of cracks is tilted, correspondingly, must set processing conditions, for example Working position, but especially, in the volume production process of LED element, for processing is promoted, seek promptly to carry out the setting of the processing conditions to each attached pattern substrate.

Patent documentation 1: TOHKEMY 2011-131256 communique

Summary of the invention

The present invention is because the problems referred to above and forming, its object be to provide a kind of with can by attached pattern substrate well the mode of singualtion set the method for processing conditions and realize this device.

The object of the invention to solve the technical problems realizes by the following technical solutions.Laser processing device of the present invention, possesses: ejaculation source, penetrate laser; And microscope carrier, can fix attached pattern substrate, this attached pattern substrate is that two dimension repeatedly configures multiple unit element patterns and forms on single crystallization base plate; By this ejaculation source and this microscope carrier are relatively moved, can make this laser along set processing preset lines scanning and expose to this attached pattern substrate simultaneously, and can carry out be full of cracks and stretch processing, it is that processing trace to be formed on this attached pattern substrate by each unit pulse light of this laser irradiates this laser along the mode of the discrete distribution of this processing preset lines that processing is stretched in this be full of cracks, from each this processing trace, be full of cracks is stretched toward this attached pattern substrate whereby; And further possess: photography member, can take this attached pattern substrate that is positioned in this microscope carrier; And offset conditions setting element, set in order to stretch in this be full of cracks and add the irradiation position that makes this laser man-hour from the offset conditions of this processing preset lines skew; This offset conditions setting element, a part of position of this attached pattern substrate is set as to this offset conditions and sets the execution position that this be full of cracks stretching, extension of use is processed, this be full of cracks that this offset conditions sets use is carried out in this execution position, and to stretch processing be transient state processing, makes in addition this execution position that this photography member takes this transient state processing under the state at the back side that focuses on this attached pattern substrate to obtain the 1st photographic image; Utilize the machine direction that adds man-hour along this transient state for the 1st photographic image pixel value to be carried out to the 1st profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.

Preferably, aforesaid laser processing device, wherein this offset conditions setting element, makes this photography member obtain the 1st photographic image, and carries out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on; The position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st profile, pixel value is carried out to the difference value of the position coordinates of the processing trace of specific this transient state processing of the 2nd profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks with the machine direction from add man-hour along this transient state for the 2nd photographic image.

Preferably, aforesaid laser processing device, wherein this offset conditions setting element, according to the gradient that clips two curve of approximation of extreme value at the 1st profile, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

The object of the invention to solve the technical problems also realizes by the following technical solutions.Laser processing device of the present invention, possesses: ejaculation source, penetrate laser; And microscope carrier, can fix attached pattern substrate, this attached pattern substrate is that two dimension repeatedly configures multiple unit element patterns and forms on single crystallization base plate; By this ejaculation source and this microscope carrier are relatively moved, can make this laser along set processing preset lines scanning and expose to this attached pattern substrate simultaneously, it can be carried out be full of cracks and stretch processing, it is that processing trace to be formed on this attached pattern substrate by each unit pulse light of this laser irradiates this laser along the mode of the discrete distribution of this processing preset lines that processing is stretched in this be full of cracks, from each this processing trace, be full of cracks is stretched toward this attached pattern substrate whereby; And further possess: photography member, can take this attached pattern substrate that is positioned in this microscope carrier; And offset conditions setting element, set in order to stretch in this be full of cracks and add the irradiation position that makes this laser man-hour from the offset conditions of this processing preset lines skew; This offset conditions setting element, a part of position of this attached pattern substrate is set as to this offset conditions and sets the execution position that this be full of cracks stretching, extension of use is processed, this be full of cracks stretching, extension processing of this execution position being carried out to this offset conditions setting use is transient state processing, in addition make this execution position that this photography member takes the processing of this transient state under the state at the back side that focuses on this attached pattern substrate to obtain the 1st photographic image, and carry out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on; The position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st photographic image, with the difference value of the position coordinates of the processing trace from specific this transient state processing of the 2nd photographic image, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

Preferably, aforesaid laser processing device, wherein this offset conditions setting element, according to the integrating profile that at each machine direction that adds man-hour along this transient state of the 1st photographic image and the 2nd photographic image, pixel value is carried out integrating gained, specificly add the position coordinates of the terminal of this be full of cracks producing man-hour, add the position coordinates of this processing trace in man-hour with this transient state in this transient state.

Preferably, aforesaid laser processing device, wherein this offset conditions setting element, stretch the individual information of this attached pattern substrate of the object of processing according to this be full of cracks of the conduct obtaining in advance, determine to stretch the side-play amount while adding the irradiation position that makes this laser man-hour from this processing preset lines skew in this be full of cracks.

The object of the invention to solve the technical problems realizes again by the following technical solutions.The processing conditions establishing method of attached pattern substrate of the present invention, to set the processing conditions that adds man-hour, this processing is two dimension on single crystallization base plate to be configured to attached pattern substrate that multiple unit element patterns form repeatedly irradiate laser with by this attached pattern substrate singualtion, wherein, this processing by attached pattern substrate singualtion is that processing is stretched in be full of cracks, it is that processing trace to be formed on this attached pattern substrate by each unit pulse light of this laser irradiates this laser along the mode of the discrete distribution of this processing preset lines that processing is stretched in this be full of cracks, from each this processing trace, be full of cracks is stretched toward this attached pattern substrate whereby, possess offset conditions and set step, this offset conditions is set step, stretches first being processed in this be full of cracks, sets in order to stretch in this be full of cracks and adds the irradiation position that makes this laser man-hour from the offset conditions of this processing preset lines skew, this offset conditions is set step, possess: transient state procedure of processing, a part of position of this attached pattern substrate is set as to this offset conditions and sets the execution position that this be full of cracks stretching, extension of use is processed, this be full of cracks stretching, extension processing of this execution position being carried out to this offset conditions setting use is that transient state is processed, photography step, makes this execution position that set photography member takes the processing of this transient state under the state at the back side that focuses on this attached pattern substrate to obtain the 1st photographic image, and offset direction particular step, utilize the machine direction that adds man-hour along this transient state for the 1st photographic image pixel value to be carried out to the 1st profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

Preferably, the processing conditions establishing method of aforesaid attached pattern substrate, wherein in this photography step, make this photography member obtain the 1st photographic image, and carry out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on; In this offset direction particular step, the position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st profile, pixel value is carried out to the difference value of the position coordinates of the processing trace of specific this transient state processing of the 2nd profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks with the machine direction from add man-hour along this transient state for the 2nd photographic image.

Preferably, the processing conditions establishing method of aforesaid attached pattern substrate, wherein in this offset direction particular step, according to the gradient that clips two curve of approximation of extreme value at the 1st profile, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

The object of the invention to solve the technical problems realizes again by the following technical solutions.The processing conditions establishing method of attached pattern substrate of the present invention, it is to set the processing conditions that adds man-hour, this processing is two dimension on single crystallization base plate to be configured to attached pattern substrate that multiple unit element patterns form repeatedly irradiate laser with by this attached pattern substrate singualtion, wherein, this processing by attached pattern substrate singualtion is that processing is stretched in be full of cracks, it is that processing trace to be formed on this attached pattern substrate by each unit pulse light of this laser irradiates this laser along the mode of the discrete distribution of this processing preset lines that processing is stretched in this be full of cracks, from each this processing trace, be full of cracks is stretched toward this attached pattern substrate whereby, possess offset conditions and set step, this offset conditions is set step, stretches first being processed in this be full of cracks, sets in order to stretch in this be full of cracks and adds the irradiation position that makes this laser man-hour from the offset conditions of this processing preset lines skew, this offset conditions is set step, possess: transient state procedure of processing, a part of position of this attached pattern substrate is set as to this offset conditions and sets the execution position that this be full of cracks stretching, extension of use is processed, this be full of cracks stretching, extension processing of this execution position being carried out to this offset conditions setting use is that transient state is processed, photography step, make this execution position that set photography member takes the processing of this transient state under the state at the back side that focuses on this attached pattern substrate to obtain the 1st photographic image, and carry out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on, and offset direction particular step, the position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st photographic image, with the difference value of the position coordinates of the processing trace from specific this transient state processing of the 2nd photographic image, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

Preferably, the processing conditions establishing method of aforesaid attached pattern substrate, wherein in this offset direction particular step, according to the integrating profile that at each machine direction that adds man-hour along this transient state of the 1st photographic image and the 2nd photographic image, pixel value is carried out integrating gained, specificly add the position coordinates of the terminal of this be full of cracks producing man-hour, add the position coordinates of this processing trace in man-hour with this transient state in this transient state.

Preferably, the processing conditions establishing method of aforesaid attached pattern substrate, wherein this offset conditions setting step further possesses side-play amount deciding step, this side-play amount deciding step, stretch the individual information of this attached pattern substrate of the object of processing according to this be full of cracks of the conduct obtaining in advance, determine to stretch the side-play amount while adding the irradiation position that makes this laser man-hour from this processing preset lines skew in this be full of cracks.

By technique scheme, the processing conditions establishing method of laser processing device of the present invention and attached pattern substrate at least has following advantages and beneficial effect: according to the present invention, in the time stretching processing by attached pattern substrate singualtion by be full of cracks, with the processing of the directional plane orthogonal direction situation that can tilt that chaps, except making, the irradiation position skew of laser is also to be carried out this be full of cracks and stretches and process, therefore can preferably suppress by be located at attached pattern substrate the unit cell pattern singualtion of the each element chip of formation time damage.Its result, can promote the productive rate of the element chip of attached pattern substrate singualtion gained.

Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of description, and for above and other object of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.

Accompanying drawing explanation

Fig. 1 roughly shows the schematic diagram of the formation of cutting apart of machined object of used laser processing device.

Fig. 2 is the illumination mode figure that stretches the laser LB of processing in order to explanation in be full of cracks.

Fig. 3 is diagrammatic top view and the part enlarged drawing of attached pattern substrate W.

Fig. 4 shows the figure that irradiates the situation of the be full of cracks stretching, extension of the section vertical with Y-direction at attached pattern substrate W of the situation of laser LB along processing preset lines PL.

Fig. 5 shows makes the irradiation position IP skew of laser LB and the constructed profile of the situation of the be full of cracks stretching, extension of the thickness direction at attached pattern substrate W of the situation that stretches processing of chap.

Fig. 6 shows the flow chart of the setting processing of the offset conditions of the 1st form.

Fig. 7 illustrates the figure that transient state adds the irradiation position IP1 of the laser LB in man-hour.

Fig. 8 (a) and figure (b) are the figure take the photographic image IM1 of attached pattern substrate W as the determining method of the coordinate X1 of foundation in order to explanation.

Fig. 9 (a) and figure (b) are the figure take the photographic image IM2 of attached pattern substrate W as the determining method of the coordinate X2 of foundation in order to explanation.

Figure 10 shows the flow chart of the setting processing of the offset conditions of the 2nd form.

Figure 11 shows the flow chart of the setting processing of the offset conditions of the 3rd form.

Figure 12 (a) and figure (b) are the photographic image IM3 of attached pattern substrate W and the figure of the profile PF3 making according to the contained rectangular area RE3 of this photographic image IM3 that is illustrated in step STP13 gained.

Figure 13 is for description of step STP25 and step STP26 and illustrative profile PF3.

Figure 14 is the near linear profile making according to the profile PF3 shown in Figure 13.

[main element symbol description]

1: controller 4: microscope carrier

4m: travel mechanism 5: illumination optical system

6: top viewing optics is 6a, 16a: video camera

6b, 16b: monitor 7: top lighting system

8: bottom illumination is 10: machined object

10a: retention tab 11: attract member

100: laser processing device 16: bottom viewing optics system

51,71,81: half-reflecting mirror 52,82: collector lens

CR1, CR2: be full of cracks IM1, IM2: photographic image

IP, IP1: the irradiation position L1 of laser: top lighting light

L2: bottom illumination light LB: laser

M: processing trace OF: directional plane

PL: processing preset lines S1: top lighting light source

S2: bottom lighting source SL: lasing light emitter

ST: straight line W1: single crystallization base plate

T, T1, T2:(be full of cracks) terminal location

UP: unit cell pattern W: attached pattern substrate

Wa, the attached pattern substrate of Wb:() interarea

The specific embodiment

Technological means and effect of taking for reaching predetermined goal of the invention for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the specific embodiment, structure, feature and the effect thereof of processing conditions establishing method to a kind of laser processing device proposing according to the present invention and attached pattern substrate, be described in detail as follows.

(laser processing device)

Fig. 1 roughly shows the schematic diagram of the formation of cutting apart of embodiments of the invention machined object applicatory of used laser processing device 100.Laser processing device 100 mainly possesses the controller 1 of the control of carrying out the exercises in device (observing action, alignment actions, processing action etc.), machined object 10 is loaded in upper microscope carrier 4, by the illumination optical that exposes to machined object 10 from the laser LB of lasing light emitter SL ejaculation is 5.

Microscope carrier 4 is mainly made up of member transparent on the optics such as quartz.Microscope carrier 4 can attract to fix by attraction members 11 such as such as suction pumps by loading the machined object 10 of face thereon.Again, microscope carrier 4 can move toward horizontal direction by the 4m of travel mechanism.In addition,, in Fig. 1, except machined object 10 is pasted the retention tab 10a with tackness, using the side of this retention tab 10a as by mounting surface, machined object 10 being loaded in microscope carrier 4, but use the form of retention tab 10a also inessential.

The 4m of travel mechanism moves microscope carrier 4 by the effect of not shown drive member in horizontal plane toward set XY two direction of principal axis.Whereby, realize the movement of observation place or the movement of laser irradiating position.In addition, about the 4m of travel mechanism, the rotation in horizontal plane (θ rotation) centered by set rotating shaft action is also carried out independently with horizontal drive, and this is better on aiming at etc.

Illumination optical is 5 to possess lasing light emitter SL, omit the half-reflecting mirror 51 and the collector lens 52 that in illustrated lens barrel, possess.

At laser processing device 100, on summary, except reflecting at half-reflecting mirror 51 the laser LB penetrating from laser SL, by this laser LB by collector lens 52 to focus on the mode optically focused loading in the processed position of the machined object 10 of microscope carrier 4, expose to machined object 10.In addition, irradiate laser LB and make microscope carrier 4 move simultaneously with above-mentioned form, whereby machined object 10 being carried out along the processing of set processing preset lines.That is laser processing device 100 is devices of processing by laser LB is scanned with respect to machined object 10.

As lasing light emitter SL, use Nd:YAG laser for better.As lasing light emitter SL, use wavelength 500nm～1600nm.Again, in order to realize the processing at above-mentioned processing graphic pattern, the wide 1psec～50psec degree that is necessary for of the pulse of laser LB.Again, toggle frequency R is 10kHz～200kHz degree, and the irradiation energy (pulse energy) of laser is that 0.1 μ J～50 μ J degree is better.

In addition,, at laser processing device 100, when processing is processed, optionally, can, under the out-of-focus appearance that makes focal position be intended to be offset from the surface of machined object 10, irradiate laser LB.In the present embodiment, out of focus value (from the surface of machined object 10 toward the side-play amount of the focal position of the direction towards inner) is set in to more than 0 μ m scope below 30 μ m better.

Again, at laser processing device 100, above microscope carrier 4, possess in order to from above observe, take the top viewing optics of machined object 10 and be 6 and be 7 to the top lighting of machined object 10 irradiating illumination light above microscope carrier 4.Again, below microscope carrier 4, possessing below microscope carrier 4 is 8 to the bottom illumination of machined object 10 irradiating illumination light.

Top viewing optics is 6 to possess the CCD camera 6a and the monitor 6b that is connected in this CCD camera 6a of the top (lens barrel top) that is located at half-reflecting mirror 51.Again, top lighting is 7 to possess top lighting light source S1 and half-reflecting mirror 71.

Described top viewing optics be 6 with top lighting be that 7 to be configured to illumination optical be 5 coaxial.More specifically, the half-reflecting mirror 51 of illumination optical system 5 and collector lens 52 and top viewing optics be 6 and top lighting be 7 to share.Whereby, the top lighting light L1 penetrating from top lighting light source S1, reflects at the half-reflecting mirror 71 being located in not shown lens barrel, then, transmitted through after forming illumination optical and being 5 half-reflecting mirror 51, at collector lens 52 optically focused, exposes to machined object 10.Again, be 6 at top viewing optics, under the postradiation state of top lighting light L1, can carry out the observation transmitted through the bright-field picture of the machined object 10 of collector lens 52, half-reflecting mirror 51 and half-reflecting mirror 71.

Again, bottom illumination is 8 to possess bottom lighting source S2, half-reflecting mirror 81 and collector lens 82.That is, at laser processing device 100, except penetrating from bottom lighting source S2 and half-reflecting mirror 81 reflection, in the bottom of collector lens 82 optically focused, illumination light L2 can irradiate machined object 10 by microscope carrier 4.For example, be 8 if use bottom illumination, bottom illumination light L2 is being exposed under the state of machined object 10, be 6 can carry out the observation of its transmitted light etc. at top viewing optics.

Moreover, as shown in Figure 1, at laser processing device 100, possess in order to from beneath, to take the bottom viewing optics of machined object 10 be 16 also can.Bottom viewing optics is the 16 CCD camera 16a that possess the below that is located at half-reflecting mirror 81 and the monitor 16b that is connected in this CCD camera 16a.In above-mentioned bottom, viewing optics is 16, for example, top lighting light L1 is being exposed under the state of machined object 10, can carry out the observation of its transmitted light.

Controller 1 further possesses the action of the each portion of control device and realizes the control part 2 of processing processing of the machined object 10 of aftermentioned form and the memory 3 of the program 3p of the action of storage control laser processing device 100 or the various data of processing processing time institute's reference.

Control part 2 is to realize with computer by such as PC or micro computer etc. are general, reads in and carry out the program 3p that is stored in memory 3 by this computer, and various inscapes realize as inscape in the function of control part 2.

Memory 3 is to realize by the medium of ROM or RAM and hard disk etc.In addition, memory 3 for the form that realizes by the inscape of computer that realizes control part 2 also can, for the form that situation of hard disk etc. and this computer independently arrange also can.

At memory 3 stored routine 3p, as the individual information of the machined object 10 of processing object (for example, material, crystal orientation, shape (size, thickness) etc.), record the machined object data D1 of Working position (or linear position), and store and be documented in corresponding each the cooked mode setting data D2 of drive condition (or these can setting range) etc. of conditioned disjunction microscope carrier 4 of parameter about laser of the form of Laser Processing of each cooked mode.Also suitably store the Working position that must make the irradiation position of laser LB record with respect to machined object data D1 because of aftermentioned reason at memory 3 and be offset both irradiation position offset data D3 of the situation institute reference of set a distance again.

Control part 2 mainly possesses the drive control part 21 of the action of the various drive parts of processing about processing of controlling the 4m of the travel mechanism driving of microscope carrier 4 or the focusing action of collector lens 52 etc. carried out, control top viewing optics and be 6 or bottom viewing optics be the photography control part 22 of observation or the photography of 16 machined objects that carry out 10, control the irradiation control part 23 of the irradiation of the laser LB of self-excitation light source SL, the absorption and control portion 24 of the fixing action of absorption of the machined object 10 of the past microscope carrier 4 that control attraction member 11 carries out, carry out the processing handling part 25 of the processing processing to processing object position according to the machined object data D1 being endowed and cooked mode setting data D2, and the offset setting portion 26 that carries out the processing of the condition of the skew of the irradiation position of setting laser LB before processing is processed.

Possessing the laser processing device 100 of controller 1 of above-mentioned formation, from operator gives the execution indication of the processing that the Working position recorded take machined object data D1 carries out as the set cooked mode of object, processing handling part 25 is obtained machined object data D1 and is obtained the condition corresponding with the cooked mode of selecting from cooked mode setting data D2, to carry out the mode of the action corresponding with this condition, via the action of each portion corresponding to the controls such as drive control part 21 or irradiation control part 23.Toggle frequency, the adjustment of pulse width etc. of the wavelength of the laser LB for example, penetrating from lasing light emitter SL or output, pulse realizes by irradiating control part 23.Whereby, at the Working position as object, can realize the processing of the cooked mode of appointment.

But, at the laser processing device 100 of the present embodiment, for example machined object 10 is attached pattern substrate W (with reference to Fig. 3 and Fig. 4), above-mentioned attached pattern substrate W is carried out to following be full of cracks and stretch the situation of processing, before the Laser Processing of above-mentioned form, optionally can make the irradiation position skew of laser LB.About the skew of the irradiation position of above-mentioned laser LB in detail will be in aftermentioned.

Again, be preferably, the formation of laser processing device 100 is, can be according to acting on controller 1 and can offer processing that operator utilizes and process single choice and select the cooked mode corresponding with various processing contents according to processing handling part 25.At said circumstances, be preferably, it is singly to provide with GUI that processing is processed.

By having above-mentioned formation, laser processing device 100 can suitably carry out various Laser Processings.

(principle of processing is stretched in be full of cracks)

Then, illustrate in the be full of cracks of one of laser processing device 100 attainable processing methods and stretch processing.Fig. 2 stretches the figure of the illumination mode of the laser LB of processing in be full of cracks in order to explanation.More specifically, Fig. 2 shows that be full of cracks stretches the toggle frequency R (kHz) of the laser LB that adds man-hour, in the time that laser LB irradiates, loads light beam spot Center Gap Δ (μ relation m) of translational speed V (mm/sec), the laser LB of the microscope carrier of machined object 10.In addition, in following explanation, so that with above-mentioned laser processing device 100 be prerequisite, by the ejaculation source of fixed laser LB and the microscope carrier 4 that is placed with machined object 10 is moved, realize the scanning of laser LB with respect to machined object 10, but under the static state of machined object 10, the form that the ejaculation source of laser LB is moved, also similarly can realize be full of cracks and stretching processing.

As shown in Figure 2, the toggle frequency of laser LB is the situation of R (kHz), and laser pulse of every 1/R (msec) (being also called unit pulse light) penetrates from lasing light emitter.Be placed with the microscope carrier 4 of machined object 10 with the mobile situation of speed V (mm/sec), penetrate extremely next laser pulse ejaculation from certain laser pulse during, (m), therefore (μ is m) to determine with Δ=V/R to μ to machined object 10 only mobile V × (1/R)=V/R for the interval of the beam center position of the beam center position of certain laser pulse and the next laser pulse penetrating that is light beam spot Center Gap Δ.

Therefore, meet the situation of formula 1 at beam diameter (being also called beam waist footpath, the spot size) Db of the laser LB on machined object 10 surfaces and light beam spot Center Gap Δ, in the time of laser scanning, each laser pulse can be not overlapping.

Δ > Db... (formula 1)

In addition, if by the irradiation time of unit pulse light that is pulse wide be set as extremely short, in the illuminated position of constituent parts pulsed light, be present in the material in the substantial middle region of the illuminated position narrow compared with the spot size of laser LB, obtain kinergety and disperse or go bad toward the direction vertical with plane of illumination from the laser irradiating, the impact that irradiation was produced of the unit pulse light that the reaction force that on the other hand, generation produces to be accompanied by above-mentioned dispersing is representative or effect of stress are in the phenomenon of the surrounding of this illuminated position.

Utilize these, the laser pulse (unit pulse light) sequentially penetrating from lasing light emitter sequentially and discretely irradiates along processing preset lines, illuminated position at the constituent parts pulsed light along processing preset lines sequentially forms small processing trace, and form continuously each other be full of cracks at each processing trace, moreover, also stretch in the thickness direction be full of cracks of machined object.As above-mentioned, the be full of cracks that machining formation is stretched in be full of cracks becomes the starting point of cutting apart when machined object 10 is cut apart.In addition, laser LB is the in the situation that of set (non-zero) out of focus value, and with the situation of out-of-focus appearance irradiation, near focal position, generation is gone bad, and the region of above-mentioned rotten generation becomes above-mentioned processing trace.

Then, use for example known brisement device, the be full of cracks that makes be full of cracks stretch machining formation extends to the brisement step of the opposing face of attached pattern substrate W, machined object 10 can be cut apart whereby.In addition, stretch the situation of machined object 10 in fully disjunction of thickness direction by be full of cracks, though do not need above-mentioned brisement step, even if part be full of cracks arrives opposing face, stretch processing by the fully situation rareness of two points of machined object 10 by be full of cracks, therefore generally speaking follow brisement step.

Brisement step is to be undertaken by following manner, for example, machined object 10 is become be formed with the interarea of processing trace side to become the posture of downside, cutting apart under the state of both sides of preset lines with the supporting of two downside brisement bars, the brisement position of cutting apart preset lines top towards another interarea and next-door neighbour declines upside brisement bar.

In addition, the light beam spot Center Gap Δ of spacing of processing trace if be equivalent to is excessive, and brisement characteristic variation cannot realize along the brisement of processing preset lines.Stretch and add man-hour in be full of cracks, must consider this point and decide processing conditions.

Because above point, whenever carrying out stretching and add man-hour preferably condition is roughly as follows in order to form at machined object 10 as the be full of cracks of be full of cracks of cutting apart starting point.Concrete condition is suitably selected according to material or the thickness etc. of machined object 10.

Pulse is wide: below the above 50psec of 1psec

Beam diameter Db: approximately 1 μ m～10 μ m degree

Below the above 3000mm/sec of microscope carrier translational speed V:50mm/sec

Below the above 200kHz of toggle frequency R:10kHz of pulse

Pulse energy E:0.1 μ J～50 μ J

(attached pattern substrate)

Then, the attached pattern substrate W as an example of machined object 10 is described.Fig. 3 is diagrammatic top view and the part enlarged drawing of attached pattern substrate W.

Attached pattern substrate W is that lamination forms set element pattern and forms on the interarea of single crystallization base plate (wafer, the mother substrate) W1 (with reference to Fig. 4) such as such as sapphire.Element pattern has and after singualtion, forms respectively the formation that multiple unit cell pattern UP two dimensions of an element chip configure repeatedly.For example, as the unit cell pattern UP of the optical elements such as LED element or electronic component two-dimensionally repeatedly.

Again, attached pattern substrate W is circular in the time overlooking, and possesses the directional plane OF of linearity in a part for periphery.Afterwards, the bearing of trend of the face interior orientation plane OF at attached pattern substrate W is called to directions X, will be called Y-direction with the orthogonal direction of directions X.

As single crystallization base plate W1, use the thickness with 70 μ m～200 μ m.Use sapphire single crystals that 100 μ m are thick for an example preferably.Again, element pattern, generally speaking, is formed as having the thickness of a few μ m degree.Again, element pattern has and concavo-convexly also can.

For example, if the attached pattern substrate W of LED chip manufacture use, the luminescent layer that will be made up of the III group-III nitride semiconductor take GaN (gallium nitride) as representative and other multiple thin layers are brilliant formation of heap of stone sapphire is mcl, moreover, on this thin layer, form the electrode pattern of powered electrode and form by being formed on LED element (LED chip).

In addition, in the time forming attached pattern substrate W, as single crystallization base plate W1, use the face orientation that makes the crystal plane such as c face or a face in interarea using the Y-direction vertical with directional plane as axle also can with respect to the tilt form of the substrate that the so-called angle of cut-off of degree is endowed several times (being also called cut-off substrate) of interarea normal direction.

The boundary member of constituent parts pattern UP is that the region of narrow width is called as straight line ST.Straight line ST is the precalculated position of cutting apart of attached pattern substrate W, and by irradiating laser with aftermentioned form along straight line ST, attached pattern substrate W is divided into each element chip.Straight line ST, is generally speaking the width of tens μ m, sets for and while overlooking element pattern, is clathrate.But, need not expose at the part single crystallization base plate W1 of straight line ST, also can even if form continuously the thin layer of composed component pattern in the position of straight line ST.

(in the be full of cracks stretching, extension of attached pattern substrate and the skew of Working position)

Below, for above-mentioned attached pattern substrate W being cut apart along straight line ST, consider along the processing preset lines PL that is set in straight line ST center and chap and stretch the situation of processing.

In addition,, in the present embodiment, whenever the be full of cracks stretching, extension of carrying out above-mentioned form adds man-hour, the interarea Wa (with reference to Fig. 4) that the face that element pattern side is not set in attached pattern substrate W that is single crystallization base plate W1 expose irradiates laser LB.That is, using the interarea Wb (with reference to Fig. 4) that is formed with element pattern side as being loaded by mounting surface the microscope carrier 4 that is fixed on laser processing device 100, carry out the irradiation of laser LB.In addition, strictly speaking, though exist concavo-convexly on the surface of element pattern, this concavo-convex thickness compared to attached pattern substrate W entirety is fully little, and being therefore considered as in fact the element pattern side that is formed with at attached pattern substrate W, to possess smooth interarea also harmless.Or the interarea Wb that the interarea of single crystallization base plate W1 that is provided with element pattern is considered as to attached pattern substrate W also can.

This stretches enforcement inessential form also in essence of processing in be full of cracks, but the situation that the width of straight line ST is little or thin layer are formed to the situation of the part of straight line ST etc., impact element pattern being caused from minimizing Ear Mucosa Treated by He Ne Laser Irradiation or the more certain point of cutting apart of realization are seen it, are better form.Similarly, in Fig. 3, be with the reason of dotted line unit of display pattern UP or straight line ST that the irradiation object face that the interarea Wa that single crystallization base plate exposes is laser is provided with the interarea Wb of element pattern towards its opposition side.

Again, be full of cracks stretching, extension processing is to carry out under the out-of-focus appearance of laser LB being given to set (non-zero) out of focus value.In addition, out of focus value is fully little with respect to the thickness of attached pattern substrate W.

Fig. 4 is presented at laser processing device 100, set and produce outside the illuminate condition that be full of cracks stretches, irradiate laser LB and the constructed profile of the situation of the be full of cracks stretching, extension of the thickness direction at attached pattern substrate W of the situation that stretches processing of chap along being set in toward the processing preset lines PL of the center of the straight line ST extending with the orthogonal Y-direction of directional plane OF.In addition, next, have the interarea Wa of attached pattern substrate W is called to the surface of attached pattern substrate W, the interarea Wb of attached pattern substrate W is called to the situation at the back side of attached pattern substrate W.

Said circumstances, position at the thickness direction of attached pattern substrate W from the distance of several μ of interarea Wa m～30 μ m, processing trace M forms discretely along Y direction, be full of cracks is stretched between each processing trace M, and be full of cracks CR1 and be full of cracks CR2 respectively from processing trace M upward (side of interarea Wa) and below (side of interarea Wb) stretch.

But, these be full of cracks CR1 and be full of cracks CR2 not above or below the vertical of processing trace M that is the face P1 not extending along the thickness direction toward attached pattern substrate W from processing preset lines PL stretch, but tilt and more more to stretch from the form of face P1 skew away from processing trace M with respect to face P1.And be full of cracks CR1 and be full of cracks CR2 be the opposite direction from face P1 skew at directions X.

The situation that be full of cracks CR1 and be full of cracks CR2 tilt and stretch simultaneously with above-mentioned form, according to the difference of its inclined degree, as shown in Figure 4, the terminal T (also comprise by after the situation of brisement step stretching, extension) that likely causes be full of cracks CR2 exceedes the scope of straight line ST and extends to the situation of the part of the unit cell pattern UP of composed component chip.As above-mentioned, if brisement is carried out as starting point in the position of stretching take be full of cracks CR1 and be full of cracks CR2, unit cell pattern UP breakage, element chip becomes defective products.And the inclination of above-mentioned be full of cracks, as long as process toward equidirectional at identical attached pattern substrate W, similarly also produces at other Working positions, this can be learnt by experience.Be created in the inclination of the be full of cracks of above-mentioned thickness direction at each straight line ST, if further cause the destruction of unit cell pattern UP, the taking-up number (productive rate) of the element chip of non-defective unit reduces.

For fear of the generation of above-mentioned defect, in the present embodiment, be positioned at the mode of the scope of straight line ST with the terminal T of the CR2 that chaps, make the irradiation position of laser LB from the desired location skew of the processing preset lines PL of Working position.

Fig. 5 show the irradiation position IP that makes laser LB from the processing preset lines PL shown in Fig. 4 toward shown in arrow A R1-constructed profile of the situation of the be full of cracks stretching, extension of the thickness direction at attached pattern substrate W of directions X skew and the situation that stretches processing of chap.As shown in Figure 5, if make the irradiation position IP skew of laser LB, can avoid the destruction of unit cell pattern UP.

But in Fig. 5, the terminal T2 of be full of cracks CR2 is located close to the below of processing preset lines PL, but this and nonessential form, as long as terminal T2 is positioned at the scope of straight line ST.

In Fig. 5, though the terminal T1 of the be full of cracks CR1 stretching toward the non-existent interarea Wa of unit cell pattern UP side is not positioned at the scope of straight line ST, so long as not the remarkable inclination that the performance of element chip is impacted to degree, can not be considered as at once defect again.For example,, as long as the shape of element chip is positioned at the scope of accommodating of predetermining, the inclination as the be full of cracks CR1 shown in admissible chart 5.

In addition, the inclination of above-mentioned be full of cracks be only to attached pattern substrate W along chapping and stretch the phenomenon that the situation of processing produces with the orthogonal Y-direction of its directional plane OF, along the directions X parallel with directional plane OF chap stretch processing situation can not produce, this can be learnt by experience.That is, chap and stretch the situation of processing along directions X, stretch from processing trace towards producing above vertical and below vertical in the be full of cracks of the thickness direction of attached pattern substrate W.

(setting of offset conditions)

(the 1st form)

As above-mentioned, attached pattern substrate W is chapped and stretches processing with the situation of singualtion, with man-hour that adds of the orthogonal Y-direction of directional plane OF, have the situation of skew necessity of the irradiation position of laser LB.Become problem in this situation, be in Fig. 4 and Fig. 5, chap CR1 past-directions X slant dilation, be full of cracks CR2 past+directions X slant dilation, but this is only only to illustrate, both visual each attached pattern substrate W of direction of extension replace, and where being tilted to generation of each attached pattern substrate W be full of cracks, in fact not attempting irradiating laser LB and chap to stretch to process and cannot learn.At least incline direction is not known, in fact cannot carry out the skew of irradiation position.

In addition,, in the volume production process of element chip, the viewpoint promoting from productivity is seen it, seeks automatically and as far as possible promptly to set the condition for being offset.

Fig. 6 shows the flow chart of the setting processing of following the offset conditions that the laser processing device 100 at the present embodiment of above each point carries out.The setting processing of the offset conditions of the present embodiment, on summary, that in fact a part of attached pattern substrate W to wanting singualtion chap to stretch and process, its result, by the direction of the inclination of the be full of cracks of the specific generation of image processing, in addition,, in this specific direction, give the processing of predefined side-play amount (distance).The setting processing of above-mentioned offset conditions is that the offset setting portion 26 that possesses by the controller 1 of laser processing device 100 makes device each portion action according to the program 3p that is stored in memory 3 and carries out necessary calculation process etc. and realize.

In addition, before carrying out above-mentioned setting processing, attached pattern substrate W loads on the microscope carrier 4 that is fixed on laser processing device 100 in advance, and is that the consistent mode of level two direction of principal axis is carried out registration process with the moving direction of the 4m of travel mechanism with its directions X respectively with Y-direction.Registration process, except the method that patent documentation 1 discloses, can suitably be suitable for known method.Record the individual information as the attached pattern substrate W of processing object at machined object data D1 again.

First, determine to carry out be full of cracks that offset setting uses and stretch the position (irradiation position of laser LB) (step STP1) of processing, laser LB is irradiated in this position and stretch and process (step STP2) chap.Next the be full of cracks of, above-mentioned offset setting being used is stretched processing and is called transient state processing.

Above-mentioned transient state processing, the position that can not impact the taking-up number of element chip at its processing result is carried out better.For example, carry out better not form at attached pattern substrate W as outer fringe position of the unit cell pattern UP of element chip etc. as object.Fig. 7 illustrates the figure that the transient state of considering this point adds the irradiation position IP1 of the laser LB in man-hour.In Fig. 7, be illustrated in the situation that the straight line ST (ST1) the most negative compared with the position coordinates of directions X more processes the irradiation position IP1 of use by near outer rim (directions X minus side) the setting transient state of attached pattern substrate W.In addition, in Fig. 7, irradiation position IP1 is shown as to two outer circumference end positions crossing over attached pattern substrate W, but the unnecessary four corner of crossing between two outer circumference end positions irradiates laser LB.

The establishing method of concrete irradiation position IP1 is not particularly limited.For example, for the form that forms according to the shape related data of the attached pattern substrate W that gives in advance also can, or by the position of image processing particular line ST (ST1), the form forming according to this particular result also can.

After the transient state process finishing of irradiation position IP1, then, under the state of by bottom lighting source S2, attached pattern substrate W being given from the transillumination of interarea Wb side, in the focal position (highly) that makes CCD camera 6a, the surface of the attached pattern substrate W of situation is under the consistent state of interarea Wa therewith, takes the Working position (step STP3) of transient state processing.Then,, by the photographic image of gained is carried out to set processing, determine to be considered as chapping CR1 at the coordinate X1 of the representative coordinate position of the directions X of the terminal T1 of interarea Wa (step STP4).

Fig. 8 is the figure take the photographic image IM1 of the attached pattern substrate W at step STP3 gained as the determining method of the coordinate X1 of foundation in order to explanation.

More specifically, Fig. 8 (a) is presented near the part irradiation position IP1 of laser LB in the photographic image IM1 of step STP3 gained.At this photographic image IM1, processing trace M is observed to the small point range of extending toward Y-direction or continuous lines roughly.Again, the be full of cracks CR1 stretching towards interarea Wa side from above-mentioned processing trace M processes the contrast that trace M is relatively strong (with higher pixel value, particularly more black) to observe.In addition, compared to processing trace M, be full of cracks CR1 is relatively more intense reason, and be full of cracks CR1 is present in the position of the focal position that more approaches CCD camera 6a compared to processing trace M.

To be undertaken by following manner take the photographic image IM1 by aforesaid way acquisition as the decision of the coordinate X1 of foundation, be set in Y-direction and have long side direction and comprise these processing trace M and the set rectangular area RE1 of the picture of be full of cracks CR1, the pixel value (colour saturation value) of making the paired X coordinate same position at this rectangular area RE1 carries out the profile after integrating along Y-direction.Shown in Fig. 8 (b), be the profile PF1 that carries out integrating processing gained take the photographic image IM1 shown in Fig. 8 (a) as object.

As above-mentioned, the photographic image IM1 shown in Fig. 8 (a) focuses on interarea Wa and obtains, and therefore can think that be full of cracks CR1 exists position the more and the CR1 that chaps more to approach interarea Wa, and at the profile PF1 shown in Fig. 8 (b), pixel value is higher.Therefore,, in the present embodiment, at this profile PF1, the coordinate X1 of pixel value maximum can be considered the coordinate position of the directions X of the terminal T1 of be full of cracks CR1.

Determine in the above described manner after coordinate X1, then, identical during with shooting photographic image IM1, under the state of by bottom lighting source S2, attached pattern substrate W being given from the transillumination of interarea Wb side, the focal position (highly) of CCD camera 6a and the depth location of processing trace M that is be full of cracks is stretched under the consistent state in the focal position of the laser LB that adds man-hour, take this Working position (step STP5).Then,, by the photographic image of gained is carried out to set processing, decision can be considered the coordinate X2 at the representative coordinate position of the directions X of processing trace M.

Fig. 9 is the figure take the photographic image IM2 of the attached pattern substrate W at step STP5 gained as the determining method of the coordinate X2 of foundation in order to explanation.

More specifically, Fig. 9 (a) is presented near the part irradiation position IP1 of laser LB in the photographic image IM2 of step STP5 gained.Identical with the photographic image IM1 shown in Fig. 8 (a), at this photographic image IM2, processing trace M is observed to the small point range of extending toward Y-direction or continuous lines roughly, and again, the be full of cracks CR1 stretching towards interarea Wa side from above-mentioned processing trace M is also observed.But focal position when shooting is set in the depth location of processing trace M, whereby at photographic image IM2, compared to photographic image IM1, the contrast of processing trace M is relatively observed strongly.

Decision take the photographic image IM2 by aforesaid way acquisition as the coordinate X2 of foundation, identical with the determining method of the terminal T1 of the be full of cracks CR1 at step STP4, to be undertaken by following manner, be set in Y-direction and have long side direction and comprise these processing trace M and the set rectangular area RE2 of the picture of be full of cracks CR1, the pixel value (colour saturation value) of making the paired X coordinate same position at this rectangular area RE2 carries out the profile after integrating along Y-direction.Shown in Fig. 9 (b), be the profile PF2 that carries out integrating processing gained take the photographic image IM2 shown in Fig. 9 (a) as object.In addition, rectangular area RE2 and rectangular area RE1 set for same size also can, differently accordingly from the location of processing trace M at each photographic image or be full of cracks CR1 also can.

As above-mentioned, the photographic image IM2 shown in Fig. 9 (a) focuses on the depth location of processing trace M and obtain, therefore can think more to approach and process trace M, and at the profile PF2 shown in Fig. 9 (b), pixel value is higher.Therefore,, in the present embodiment, at this profile PF2, the coordinate X2 of pixel value maximum can be considered the coordinate position of the directions X of processing trace M.

In addition, the execution sequence of the processing representing as step STP3～STP6 also suitably replace can, suitably parallelly also can.For example, carry out continuously after the photograph processing of step STP3 and step STP5, sequentially carry out also can in the coordinate X1 of step STP4 and step STP6, the particular procedure of X2, after the photograph processing of step STP3, during the particular procedure of the coordinate X1 carrying out at step STP4, carry out concurrently therewith also can in the photograph processing of step STP5.

Determine with above-mentioned form after the value of coordinate X1 and X2, then, calculate the difference value Δ X=X2-X1 of these coordinate figures, according to the specific direction that should be offset of its result (offset direction) (step STP7).

Particularly, between Δ X and offset direction, there is following relation.

Δ X > 0 → terminal T1 processes trace M arrival+directions X → past-directions X skew.

Δ X < 0 → terminal T1 processes trace M arrival-directions X → past+directions X skew.

Δ X=0 → terminal T1 arrives the top of next-door neighbour's processing trace M → must not be offset.

If the situation shown in Fig. 8 and Fig. 9, due to Δ X < 0, therefore specific should skew by past+directions X.

As above-mentioned, after particular offset direction, then, according to the machined object data D1 and the irradiation position offset data D3 that are stored in memory 3, determine the side-play amount (step STP8) with respect to specific offset direction.

As above-mentioned, record in fact the individual information (crystal orientation, thickness etc.) as the attached pattern substrate W of processing object (that is, carry out the be full of cracks that offset setting uses and stretch processing) at machined object data D1.On the other hand, store in advance at irradiation position offset data D3 the record that can set according to the individual information of attached pattern substrate W side-play amount.Offset setting portion 26 obtains the individual information of attached pattern substrate W from machined object data D1, determine the side-play amount corresponding with this individual information with reference to irradiation position offset data D3.

In addition, the side-play amount determining from the record content of irradiation position offset data D3, if the irradiation position of laser LB is offset in its value with respect to Working position, the destruction of the unit cell pattern UP causing at the be full of cracks CR2 shown in most situation Fig. 4 is endowed in experience as avoidance value.For example, the larger inclined degree that chaps of the thickness of attached pattern substrate W has larger tendency, can suppose following correspondence, stores record etc. at irradiation position offset data D3 in the larger mode of setting larger side-play amount of thickness of attached pattern substrate W.

The form of irradiation position offset data D3 is not particularly limited.For example, as depending on that the material kind of pattern substrate W or thickness range are recorded respectively the table of the side-play amount that should set and the form of preparing irradiation position offset data D3 also can, or the form that thickness and side-play amount are defined as certain functional relation also can.

Again, can understand from above-mentioned determining method, the decision of side-play amount be with the offset direction of carrying out at step STP1～step STP7 specific can be irrelevant carry out, therefore need after particular offset direction, not determine, before offset direction specific or also can with the specific form of carrying out concurrently of offset direction.

After the decision of the offset direction of step STP7 and the decision of the side-play amount at step STP8 are carried out, offset setting processing finishes, and then, carries out processing in order to the be full of cracks of attached pattern substrate W singualtion is stretched to processing according to determined offset direction and side-play amount.Whereby, can realize be full of cracks and stretch the singualtion of the attached pattern substrate W that the destruction of the unit cell pattern UP that causes preferably suppressed.

In addition,, though set side-play amount or Δ X itself is set as to side-play amount possibility in principle according to the value of the Δ X calculating at step STP7, adopt above-mentioned form may not necessarily promote the setting accuracy of side-play amount.Its reason is, the coordinate X1 or the X2 that determine with above-mentioned form, calculating in principle at it might not be the terminal T1 for correctly representing be full of cracks CR1 or the value of processing the physical location of trace M, be only the value of obtaining in convenience in order to determine offset direction, therefore its difference value Δ X is not limited to give suitable side-play amount in all processing of this attached pattern substrate W.

(the 2nd form)

The processing method of setting in the offset conditions of laser processing device 100 is not limited to above-mentioned the 1st form.Figure 10 shows the flow chart of the setting processing of the offset conditions of the 2nd form.The setting of the 2nd form shown in Figure 10 is processed and is carried out the point of step STP13 and step STP14 except the step STP3 of the setting processing in the 1st form shown in alternate figures 6 and step STP4, processes different points with the setting of following in this difference value at step STP7 to calculate used coordinate figure and the 1st form, identical with the setting processing of the 1st form.

Particularly, in the 2nd form, undertaken after transient state processing by step STP1～STP2, under the state of by bottom lighting source S2, attached pattern substrate W being given from the transillumination of interarea Wb side, make the focal position (highly) of CCD camera 6a and be under the consistent state of interarea Wb at the back side of the attached pattern substrate W of this situation, taking the position (step STP13) of carrying out transient state processing.Then, by the photographic image of gained being carried out to the image processing identical with the image processing of the terminal T1 of the decision be full of cracks CR1 of Fig. 8 explanation, determine to can be considered the coordinate X3 (step STP14) at the representative coordinate position of the directions X of the terminal T2 of the interarea Wb of be full of cracks CR2.Particularly, make the profile identical with the profile PF1 of Fig. 8 (b), the coordinate X3 of pixel value maximum can be considered the position of the terminal T2 of be full of cracks CR2 therein.

The person of connecing, proceeds the processing of step STP5～step STP6 to obtain coordinate X2, in addition, at step STP7, calculates Δ X=X2-X3, according to the specific direction that should be offset of its result (offset direction) (step STP7).

Particularly, between Δ X and offset direction, there is following relation.

Δ X > 0 → terminal T2 processes trace M arrival-directions X → past+directions X skew.

Δ X < 0 → terminal T2 processes trace M arrival+directions X → past-directions X skew.

Δ X=0 → terminal T2 arrives the below of next-door neighbour's processing trace M → must not be offset.

Again, the setting of side-play amount and the 1st form are similarly.

The 2nd form also with the 1st homomorphosis, after the decision of the offset direction of step STP7 and the decision of the side-play amount at step STP8 are carried out, offset setting processing finishes, and then, carries out processing in order to the be full of cracks of attached pattern substrate W singualtion is stretched to processing according to determined offset direction and side-play amount.Whereby, can realize be full of cracks and stretch the singualtion of the attached pattern substrate W that the destruction of the unit cell pattern UP that causes preferably suppressed.

(the 3rd form)

The the above-mentioned the 1st and the 2nd form, common according to the point of the difference value particular offset direction of coordinate figure, is not limited to this but set in the offset conditions of laser processing device 100 method of processing.Figure 11 shows the flow chart of the setting processing of the offset conditions of the 3rd form.

The setting processing of the 3rd form shown in Figure 11, substitute the camera coverage of the step STP13 of the setting processing of the 2nd form shown in Figure 10 is located to the point at the orthogonal position of straight line ST, carry out with step STP14 and step STP5～step STP7 of continuing the point of step STP24～step STP27 different with the setting of the 2nd form processing outside, identical with the setting processing of the 2nd form.

Particularly, in the 3rd form, first, undertaken after transient state processing by step STP1～STP2, make the focal position (highly) of CCD camera 6a by step STP13 and be under the consistent state of interarea Wb at the back side of the attached pattern substrate W of this situation, taking the position of carrying out transient state processing.But, as above-mentioned, in the time taking, take the orthogonal position of straight line ST.

Figure 12 is illustrated in the photographic image IM3 of attached pattern substrate W and the figure of the profile PF3 making according to the contained rectangular area RE3 of this photographic image IM3 of step STP13 gained.

The situation of the 3rd form, obtain after the photographic image IM3 shown in Figure 12 (a) by the photography at step STP13, set the rectangular area RE3 that comprises the straight line ST extending toward Y-direction at photographic image IM3, the pixel value (colour saturation value) of making the paired X coordinate same position at this rectangular area RE3 carries out the profile PF3 (step STP24) after integrating along Y-direction.Figure 12 (b) illustrates the profile PF3 obtaining.But, for the simplification of back segment processing, at above-mentioned profile PF3, substitute the moving average that directly uses the undressed data of integrating value and use 5 rolling averages etc.

In addition, at profile PF1 and PF2 shown in Fig. 8 (b) and Fig. 9 (b), show each profile in brightness lower (secretly) mode that value is higher, but in Figure 12 (b), on the contrary, show profile PF3 in brightness higher (bright) mode that value is higher.

Obtain after profile PF3, then, for the gradient α (X) that calculates each other near linear adjacent 3 of profile PF3, make along directions X and describe the profile (near linear gradient profile) (step STP25) after the value of above-mentioned gradient α (X).Then,, according to the near linear gradient profile of gained, calculate respectively the gradient (step STP26) that clips two near linears of minimum of a value at profile PF3.

Figure 13 is for description of step STP25 and step STP26 and illustrative profile PF3.In addition,, at the profile PF3 shown in Figure 13, at X=Xmin, pixel value is obtained minimum of a value (extreme value).

Again, Figure 14 is the near linear profile making according to the profile PF3 shown in Figure 13.The near linear profile of Figure 14 roughly shows the variation of the gradient of profile PF3.That is, in Figure 14, be positive scope in the value of α (X), profile PF3 increases, in Figure 14, be negative scope in the value of α (X), profile PF3 reduces, in Figure 14, be to approach 0 scope in the value of α (X), profile PF3 is roughly certain.

At the illustrative profile PF3 of Figure 13, along with becoming greatly roughly certain pixel value, the value of X successively decreases, become after minimum at X=Xmin, the value of following X becomes greatly pixel value and increases progressively.Therefore, at the near linear gradient profile of Figure 14, the scope large compared with X=Xmin obtain the value (X=XU1) of the X that the more set threshold value A of value of α (X) (absolute value) is large, with the value (X=XU2) of the little X of the more set threshold value B of value of X > XU1 and α (X) (absolute value) after, the former is made as minimum of a value and the latter and is made as peaked interval (XU1～XU2) and roughly becomes the interval increasing at the profile PF3 pixel value shown in Figure 13.Therefore,, if obtain the gradient β 1 of the near linear between X=XU1 and X=XU2 at profile PF3, above-mentioned gradient table is shown in the interval gradient that profile PF3 pixel value increases.

Similarly, at the near linear gradient profile of Figure 14, obtain in the scope little compared with X=Xmin the value (X=XL1) of the X that the more set threshold value A of value of absolute value of α (X) is large, with the value (X=XL2) of the little X of the more set threshold value B of value of the absolute value of X < XL1 and α (X) after, the former is made as the interval (XL2～XL1) that maximum and the latter be made as minimum of a value roughly becomes the interval of reducing at the profile PF3 pixel value shown in Figure 13.Therefore,, if obtain the gradient β 2 of the near linear between X=XL2 and X=XL1 at profile PF3, above-mentioned gradient table is shown in the interval gradient that profile PF3 pixel value reduces.

Obtain and clip after gradient β 1, the β 2 of two near linears of X=Xmin in the above described manner, from poor (being the poor of absolute value strictly speaking) particular offset direction (step STP27) of two gradients.

Particularly, the poor Δ β of the absolute value of gradient β 1 and gradient β 2=| between β 2|-| β 1| and offset direction, the dependency relation of the incline direction specifically being chapped experience and Δ β, has following corresponding relation.

Δ β > 0 → terminal T1 processes trace M arrival-directions X → past+directions X skew.

Δ β < 0 → terminal T1 processes trace M arrival+directions X → past-directions X skew.

Δ β=0 → terminal T1 arrives the top of next-door neighbour's processing trace M → must not be offset.

If the situation shown in Figure 13, due to Δ β > 0, therefore specific one-tenth should past+directions X skew.

As above-mentioned, after particular offset direction, identical with the 1st and the 2nd embodiment, determine the side-play amount (step STP8) with respect to specific offset direction according to the machined object data D1 and the irradiation position offset data D3 that are stored in memory 3.

In addition, identical with the 1st and the 2nd embodiment, profile PF3 is produced as to the larger situation of the less pixel value of brightness, by the gradient of peaked two near linears that relatively clips profile, can be similarly corresponding with said circumstances.

Again, substitute the value of the gradient of two near linears, also can according to the decision offset direction, angle of inclination of each near linear.

As above-mentioned, according to the present embodiment, in the time stretching processing by attached pattern substrate singualtion by be full of cracks, with the processing of the directional plane orthogonal direction situation that can tilt that chaps, except making, the irradiation position skew of laser is also to be carried out this be full of cracks and stretches and process, therefore can preferably suppress by be located at attached pattern substrate the unit cell pattern singualtion of the each element chip of formation time damage.Its result, can promote the productive rate of the element chip of attached pattern substrate singualtion gained.

The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be the content that does not depart from technical solution of the present invention, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.

Claims

1. a laser processing device, possesses:

Ejaculation source, penetrates laser; And

Microscope carrier, can fix attached pattern substrate, and this attached pattern substrate is that two dimension repeatedly configures multiple unit element patterns and forms on single crystallization base plate;

By this ejaculation source and this microscope carrier are relatively moved, can make this laser along set processing preset lines scanning and expose to this attached pattern substrate simultaneously, it is characterized in that:

Can carry out be full of cracks and stretch processing, it is that processing trace to be formed on this attached pattern substrate by each unit pulse light of this laser irradiates this laser along the mode of the discrete distribution of this processing preset lines that processing is stretched in this be full of cracks, makes according to this be full of cracks stretch toward this attached pattern substrate from each this processing trace;

And further possess:

Photography member, can take this attached pattern substrate that is positioned in this microscope carrier; And

Offset conditions setting element, sets in order to stretch in this be full of cracks and adds the irradiation position that makes this laser man-hour from the offset conditions of this processing preset lines skew;

This offset conditions setting element, a part of position of this attached pattern substrate is set as to this offset conditions and sets the execution position that this be full of cracks stretching, extension of use is processed, this be full of cracks that this offset conditions sets use is carried out in this execution position and stretch after processing is transient state processing, under the state at the back side that focuses on this attached pattern substrate, make this execution position that this photography member takes this transient state processing to obtain the 1st photographic image;

Utilize the machine direction that adds man-hour along this transient state for the 1st photographic image pixel value to be carried out to the 1st profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

2. laser processing device as claimed in claim 1, it is characterized in that wherein this offset conditions setting element, make this photography member obtain the 1st photographic image, and carry out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on;

The position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st profile, pixel value is carried out to the difference value of the position coordinates of the processing trace of specific this transient state processing of the 2nd profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks with the machine direction from add man-hour along this transient state for the 2nd photographic image.

3. laser processing device as claimed in claim 1, it is characterized in that wherein this offset conditions setting element, according to the gradient that clips two curve of approximation of extreme value at the 1st profile, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

4. a laser processing device, possesses:

Ejaculation source, penetrates laser; And

And further possess:

This offset conditions setting element, a part of position of this attached pattern substrate is set as to this offset conditions and sets the execution position that this be full of cracks stretching, extension of use is processed, this be full of cracks stretching, extension processing of this execution position being carried out to this offset conditions setting use is transient state processing, and make this execution position that this photography member takes the processing of this transient state under the state at the back side that focuses on this attached pattern substrate to obtain the 1st photographic image, and carry out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on;

The position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st photographic image, with the difference value of the position coordinates of the processing trace from specific this transient state processing of the 2nd photographic image, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

5. laser processing device as claimed in claim 4, it is characterized in that wherein this offset conditions setting element, according to the machine direction that adds man-hour along this transient state in each of the 1st photographic image and the 2nd photographic image, pixel value is carried out the integrating profile of integrating gained, specificly add the position coordinates of the terminal of this be full of cracks producing man-hour, add the position coordinates of this processing trace in man-hour with this transient state in this transient state.

6. the laser processing device as described in any one in claim 2,4 or 5, it is characterized in that wherein this offset conditions setting element, stretch the individual information of this attached pattern substrate of the object of processing according to this be full of cracks of the conduct obtaining in advance, determine to stretch the side-play amount while adding the irradiation position that makes this laser man-hour from this processing preset lines skew in this be full of cracks.

7. the processing conditions establishing method of an attached pattern substrate, to set the processing conditions that adds man-hour, this processing is two dimension on single crystallization base plate to be configured to attached pattern substrate that multiple unit element patterns form repeatedly irradiate laser with by this attached pattern substrate singualtion, it is characterized in that:

This processing by attached pattern substrate singualtion is that processing is stretched in be full of cracks, it is that processing trace to be formed on this attached pattern substrate by each unit pulse light of this laser irradiates this laser along the mode of the discrete distribution of this processing preset lines that processing is stretched in this be full of cracks, from each this processing trace, be full of cracks is stretched toward this attached pattern substrate whereby;

Possess offset conditions and set step, this offset conditions is set step, stretches first being processed in this be full of cracks, sets in order to stretch in this be full of cracks and adds the irradiation position that makes this laser man-hour from the offset conditions of this processing preset lines skew;

This offset conditions is set step, possesses:

Transient state procedure of processing, is set as this offset conditions by a part of position of this attached pattern substrate and sets the execution position that this be full of cracks stretching, extension of use is processed, and this be full of cracks stretching, extension processing of this execution position being carried out to this offset conditions setting use is that transient state is processed;

Photography step, makes this execution position that set photography member takes the processing of this transient state under the state at the back side that focuses on this attached pattern substrate to obtain the 1st photographic image; And

Offset direction particular step, utilizes the machine direction that adds man-hour along this transient state for the 1st photographic image pixel value to be carried out to the 1st profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

8. the processing conditions establishing method of attached pattern substrate as claimed in claim 7, it is characterized in that wherein in this photography step, make this photography member obtain the 1st photographic image, and carry out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on;

In this offset direction particular step, the position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st profile, pixel value is carried out to the difference value of the position coordinates of the processing trace of specific this transient state processing of the 2nd profile of integrating gained, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks with the machine direction from add man-hour along this transient state for the 2nd photographic image.

9. the processing conditions establishing method of attached pattern substrate as claimed in claim 7, it is characterized in that wherein in this offset direction particular step, according to the gradient that clips two curve of approximation of extreme value at the 1st profile, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

10. the processing conditions establishing method of an attached pattern substrate, to set the processing conditions that adds man-hour, this processing is two dimension on single crystallization base plate to be configured to attached pattern substrate that multiple unit element patterns form repeatedly irradiate laser with by this attached pattern substrate singualtion, it is characterized in that:

This offset conditions is set step, possesses:

Photography step, make this execution position that set photography member takes the processing of this transient state under the state at the back side that focuses on this attached pattern substrate to obtain the 1st photographic image, and carry out this transient state and add this execution position of taking this transient state processing under the state of focal position of this laser in man-hour to obtain the 2nd photographic image focusing on; And

Offset direction particular step, the position coordinates of the terminal of the be full of cracks of stretching according to the processing trace specifically forming from this transient state machining from the 1st photographic image, with the difference value of the position coordinates of the processing trace from specific this transient state processing of the 2nd photographic image, the specific direction that adds this irradiation position skew that should make this laser man-hour that stretches in this be full of cracks.

The processing conditions establishing method of 11. attached pattern substrates as claimed in claim 10, it is characterized in that wherein in this offset direction particular step, according to the integrating profile that at each machine direction that adds man-hour along this transient state of the 1st photographic image and the 2nd photographic image, pixel value is carried out integrating gained, specificly add the position coordinates of the terminal of this be full of cracks producing man-hour, add the position coordinates of this processing trace in man-hour with this transient state in this transient state.

The processing conditions establishing method of 12. attached pattern substrates as described in any one in claim 8,10 or 11, it is characterized in that wherein this offset conditions setting step further possesses side-play amount deciding step, this side-play amount deciding step, stretch the individual information of this attached pattern substrate of the object of processing according to this be full of cracks of the conduct obtaining in advance, determine to stretch the side-play amount while adding the irradiation position that makes this laser man-hour from this processing preset lines skew in this be full of cracks.