CN103781249A - Sine wave dimmer controlled by embedded system - Google Patents

Abstract

The invention relates to a sine wave dimmer controlled by an embedded system. The sine wave dimmer comprises a man-machine conversation interface, the embedded system, an IGBT driving circuit and an IGBT gate circuit. The embedded system inputs a PWM signal to the IGBT driving circuit and controls the IGBT gate circuit through the IGBT driving circuit. The man-machine conversation interface is used for setting and displaying running parameters of the dimmer. The embedded system is further used for inputting the PWM signal to the IBGT driving circuit and controlling the man-machine conversation interface to display the running parameters of the dimmer at the same time. The IGBT driving circuit conducts two-stage amplification on the received PWM signal, then outputs the amplified PWM signal to the IGBT gate circuit and controls the IGBT gate circuit to be opened and closed. The IGBT gate circuit is used for superposing a sine wave alternating current and a carrier wave output by the IGBT driving circuit and then outputting the superposed current and wave to a loading circuit. The IGBT dimmer replaces an SCR dimmer, and the defects that an ordinary SCR dimmer is large in EMI, and a power grid is polluted are overcome.

Description

A kind of sinewave dimmer of embedded system control

Technical field

The present invention relates to a kind ofly can, by the sinewave dimmer of embedded system control, belong to electronic apparatus technical field.

Background technology

Dimmer is realized the dimming function to light fixture by voltage (or electric current) size that changes 220V sine wave alternating current, conventionally adopt controllable silicon (SCR, reverse blocking three end thyristors are called for short brilliant lock (thyristor)) semiconductor power device, as shown in the major loop schematic diagram of controllable silicon dimmer in accompanying drawing 1.

Ui is input voltage (civil power 220V), and Uo is dimmer output voltage, external bulb.S1, two controllable silicons of S2 or a bidirectional triode thyristor.Control circuit postpones a phase angle after in the time of alternating voltage zero-crossing point and goes to trigger controllable silicon S1 conducting, until next zero crossing is reversed cut-off, controllable silicon S2 conducting is triggered at next phase angle again, until next zero crossing is reversed again cut-off again, works so again and again.As shown in the output waveform of the accompanying drawing time dependent waveform of 2 input voltage and input current and accompanying drawing 3 controllable silicon dimmers.

This output voltage waveforms has a very steep forward position at trigger point place, voltage jumps to input value from zero suddenly.If with it go controlling resistance load or inductive load there is no what problem, if while going control to there is the lamp source of capacity load with it, because capacitor two terminal voltages can not consolidation, so can produce the surge current that peak value is very high, this surge current can produce electromagnetic interference, destroys (or pollution) power grid quality, even can damage electric equipment, the rise time of generally reducing it by series electrical perception choking-winding, reduce electromagnetic interference.Therefore controllable silicon dimmer is introduced LC filtering link.L2 output inductor, C2 output filter capacitor (this electric capacity mainly refers to distributed capacitance and load capacitance in fact).Its effect is to make to be become fillet by the forward position of the waveform after copped wave, even if but adopted LC filtering, the electromagnetic interference of controllable silicon dimmer is still greatly a unconquerable defect, more seriously along with the propelling of " Green Lighting Project ", and the cry of environmental protection is more and more higher, controllable silicon dimmer is all likely forced to withdraw from the market at any time.

Since controllable silicon (thyristor) invention, power semiconductor is from SCR(triode thyristor), GTO(gate level turn-off thyristor), TRIS bidirectional thyristor), BJT bipolar transistor) be called again GTR power transistor), MOSFET(metal oxide silicon field effect) ... develop into the IGBT of today.

IGBT is the abbreviation of Insulated Gate Bipolar Transistor (insulated gate bipolar transistor), IGBT is a kind of device being composited by MOSFET and bipolar transistor, have advantages of that MOSFET device drive power is little and switching speed is fast, having again bipolar device saturation pressure reduces and advantage capacious, can normally work in tens kHz frequency ranges, in modern power electronics technology, obtain application more and more widely, in the big or middle power application of upper frequency, occupied leading position.

Sinusoidal waveform does not comprise harmonic wave, there is no the harm of harmonic wave, can reduce loss and can raise the efficiency.Further, when electricity Ji ﹑ transformer and the design of other electric equipment, all supposed that power supply is sinusoidal, thereby simplified design.Utilize under the large electric current of IGBT, the feature that whole cycle is controlled, adopts PWM working method.Make PWM modulating wave (carrier wave) operating frequency higher up to 50KHz(carrier frequency, harmonic content is less, needed filter inductance and electric capacity are less, output current and voltage more approach sine wave), count deployment analysis with the vertical leaf-size class of richness known, in source current, do not comprise low-order harmonic, only contain the high order harmonic component relevant with switching frequency 50KHz.(Harmfulness Caused by Harmonics is mainly from low-order harmonic, and the harm amount of high order harmonic component can be ignored).As shown in the output waveform of accompanying drawing 4IGBT dimmer.

IGBT is used for alternating current frequency conversion, as motor variable-frequency speed-regulating, electromagnetic oven, electric furnace temperature adjustment, Switching Power Supply etc.IGBT dimmer has no on market, mainly can discover out to flicker small in light and flaw because of human eye, make us satisfied dimmer product difficulty do, technical requirement is high, wherein the drive circuit of IGBT is crucial, common IGBT driver module on market is inapplicable on dimmer, and IGBT dimmer need design own special IGBT driver module (or circuit)

In IGBT dimmer, be PWM (pulse-width modulation) to the control signal of IGBT drive circuit, PWM related hardware (chip) in reality has some limitations, and the high-performance that embody IGBT dimmer just must possess high performance pwm signal (gradient or resolution etc.).Adopt the dimmer of embedded system, not only can provide High Performance PWM signal but also can improve automatic control (program control) performance of (improvement) dimmer.

Summary of the invention

For above the problems of the prior art, the present invention substitutes SCR with IGBT, eliminates SCR dimmer: 1) EMI(electromagnetic radiation) large; 2) pollute the shortcomings such as electrical network; Develop power IGBT drive circuit (being applied in IGBT dimmer) in a being applicable to;

In addition, embedded system is added IGBT dimmer by the present invention, changes the simple SCR of employing light-adjusting module in SCR dimmer, there is no system control function.Dimmer is had: 1) timing automatic startup, hold function; 2) soft opening (slow opening), soft stop (slow stopping) function; 3) automatic control function of many time periods; 4) touch-screen (solution human-computer dialogue); 5) data query function.

Concrete technical scheme of the present invention is as follows:

A kind of sinewave dimmer of embedded system control, comprise man-machine dialog interface, embedded system, IGBT drive circuit and IGBT gate circuit, described embedded system is to IGBT drive circuit input pwm signal, by conducting and the cut-off of IGBT drive circuit control IGBT gate circuit, described man-machine dialog interface is for arranging and show the operational factor of dimmer, described embedded system controls for inputting corresponding pwm signal according to the operational factor of the set dimmer of man-machine dialog interface to IGBT drive circuit the operational factor that man-machine dialog interface shows dimmer simultaneously, described IGBT drive circuit is exported to IGBT gate circuit and is controlled its open and close after the pwm signal receiving is amplified by two-stage, described IGBT gate circuit is for exporting to load circuit after the carrier wave stack of the sine wave alternating current of 220V and the output of IGBT drive circuit.

The operational factor of described dimmer comprise dimming ratio, time opening or close, date and clock setting etc.

Described IGBT gate circuit can connect four diodes by an IGBT pipe and form, and described IGBT drive circuit can connect successively amplifying circuit, voltage stabilizing circuit and protective circuit by photoelectric coupling circuit and form.

Described photoelectric coupling circuit is connected to form by current-limiting resistance R01 and photoelectrical coupler U20, described amplifying circuit comprises preamplifying circuit and rear class amplifying circuit, described preamplifying circuit adopts current-limiting resistance R202 to connect field effect transistor Q200, filter capacitor C201, resistance R 203 is as the G limit leakage resistance of field effect transistor Q200, resistance R 204 is the C limit leakage resistance of field effect transistor Q200, described rear class amplifying circuit comprises field effect transistor Q201 and field effect transistor Q202, resistance R 205 is connected with the field effect transistor Q201C utmost point as C limit leakage resistance, described rear class amplifying circuit also comprises and field effect transistor Q201, the energy storage capacitor C202 that field effect transistor Q202 and resistance R 205 connect, C203, C204, C205, C206, C207, described voltage stabilizing circuit is connected to form in the mode just aligning by voltage stabilizing didoe D1 and voltage stabilizing didoe D2, resistance R ge is IGBT pipe GE interpolar protective resistance, the GE interelectrode capacitance composition capacitance-resistance oscillating circuit of resistance R g and IGBT pipe.

Described embedded system can be made up of ARM7 or ARM9 chip.

The resistance of described current-limiting resistance R01 is 200 Ω, and current-limiting resistance R202 resistance is 350 Ω, and resistance R 203 resistances are 30 Ω, resistance R 204 resistances are 200 Ω, resistance R 205 resistances are 20 Ω, and resistance R g resistance is 20 Ω, and resistance R ge resistance is 10k Ω, photoelectrical coupler U20 is PS9701, field effect transistor Q200 is IRP530, and field effect transistor Q201 is IRF530, and field effect transistor Q202 is IRP9530, the puncture voltage of described voltage stabilizing didoe D1 is 9.1V, and the puncture voltage of voltage stabilizing didoe D2 is 15V.

Described embedded system can be supplied with by the first Switching Power Supply (I) of 5V the voltage of 5V, and described IGBT drive circuit can be by second switch power supply (II) to preamplifying circuit power supply 5V, and give rear class amplifying circuit supply ± 12V or ± voltage of 15V.

Beneficial effect of the present invention is as follows: realized and substituted SCR dimmer with IGBT dimmer, overcome general SCR dimmer EMI(electromagnetic radiation) large and pollute the shortcomings such as electrical network.

The present invention has developed a IGBT drive circuit (being applied in IGBT dimmer), and design refining, cost simplify, manufacture and be not difficult, and is easy to procedure auto-control.

The present invention for IGBT dimmer, makes original IGBT dimmer only produce pwm signal with hardware embedded system, now can be generated by software; Use Software Create pwm signal, accurately, flexibly, and can timing controlled; Owing to adding embedded system, the convenient realization of dimmer operation automatically, timing manipulation; Owing to adding embedded system, touch-screen can be added to dimmer, such man-machine dialog interface has promoted convenience, the handling and product specification while use; Relating to like this, is not only convenient to system protection and also facilitates system control upgrading and function to increase.IGBT dimmer, because adopting embedded control system, has been realized:

1) touch-screen setting and control;

2) practical and man-machine dialog interface attractive in appearance;

3) multi-period automatic unlatching and function out of service;

4) delay and open the gentle function of stopping;

5) data storage and query function;

6) when power-off is restarted, can recover former setting and operation automatically;

7) anti-interference function;

8) the applicable function of particular customer or certain applications.

In addition, embedded system coordinates the design of IGBT drive circuit and IGBT gate circuit that the sine wave alternating current of 220V and the carrier wave of thousands of hertz are superposeed, and realizes power output adjustable, to realize the function of light modulation.

Accompanying drawing explanation

Fig. 1 is the major loop schematic diagram of controllable silicon dimmer;

Fig. 2 is the time dependent waveform of 220V alternating current input voltage and input current;

Fig. 3 is the output waveform of controllable silicon dimmer;

Fig. 4 is the output waveform of IGBT dimmer;

Fig. 5 is the frame principle figure of the sinewave dimmer of a kind of embedded system control of the present invention;

Fig. 6 is the terminal circuit diagram of sinewave dimmer embodiment 1 middle connecting terminal of a kind of embedded system control of the present invention;

Fig. 7 is the circuit diagram of IGBT gate circuit in the sinewave dimmer embodiment 1 of a kind of embedded system control of the present invention;

Fig. 8 is the circuit diagram of IGBT drive circuit in the sinewave dimmer embodiment 1 of a kind of embedded system control of the present invention.

Fig. 9 is the workflow diagram of embedded system main program in the embodiment of the present invention two;

Figure 10 is the workflow diagram of embedded system interrupt routine in the embodiment of the present invention two;

Figure 11 is the schematic diagram of man-machine dialog interface in the embodiment of the present invention two.

Embodiment

Below in conjunction with accompanying drawing, the invention will be further described:

Embodiment mono-:

As shown in Figure 1,

1) IGBT pipe model is selected power in G60N100;

2) embedded system CPU selects ARM9(S3C2440); The radiating surface of IGBT pipe and aluminium alloy casing are close to, and working temperature is distributed to ambient air by casing surface;

3) conducting and the cut-off of the G-E both end voltage control IGBT pipe of IGBT pipe ,+15V conducting ,-15V cut-off;

4) master control program of embedded system is operated in Infinite Cyclic, continuity and the renewal of battery-powered assurance date and clock when power-off.

5) embedded system, by program control CPU computing output pwm signal, by conducting and the cut-off of IGBT pipe in IGBT drive circuit control IGBT gate circuit, makes output voltage adjustable continuously within the scope of 20V～220V.Its resolution and stability are determined by the performance of PWM and IGBT pipe.

As Figure 6-Figure 8,

1) IGBT power output part principle is: mix 4 BYD1200 (large current diode) with a G40N60IGBT pipe and form power circuit, can solve alternating current two-way admittance with 1 IGBT pipe like this, save 1 IGBT pipe, and operational reliability increases;

2) pwm signal being produced by control system is coupled to drive circuit through photoelectrical coupler (PS9701), and R01 is current-limiting resistance;

3) adopting Q200 field effect transistor IRF530 to make prime amplifies, C201 filter capacitor, the G limit leakage resistance that resistance R 203 is IRF530, R204 is the C limit leakage resistance of IRF530, also guaranteed voltage difference between the CG of Q201 simultaneously, field effect transistor Q201 and the field effect transistor Q202 condition of work of recommending amplification are met;

4) C202, C203, C204, C205, C206, C207 are energy storage capacitor, required drive current between GE electric field when guaranteeing IGBT pipe speed-sensitive switch;

5) D1, D2 are voltage stabilizing didoe, to guarantee IGBT pipe G utmost point gate voltage, make conducting and the cut-off reliably of IGBT pipe;

6) Rge is IGBT pipe GE interpolar protective resistance, protects IGBT pipe in short circuit or while having large backward current; 7) the GE interelectrode capacitance of Rg resistance and IGBT pipe composition capacitance-resistance oscillating circuit, its frequency is very crucial, directly affects the safety of drive circuit works and stablizes, and when actual fabrication, need and calculate through several times experiment.

In addition, the present invention requires the width (PCB circuit) of output circuit should guarantee more than 5mm, so just with practical value, because a dimmer will drive the power of thousands of watts.

IGBT pipe should be positioned at wallboard (cabinet wallboard) or the chassis backplane of dimmer one side, can directly contact with dimmer cabinet (casing) wall like this with fixing, guarantees radiating effect.

In the program of embedded system of the present invention:

1) work that will do in the circulation of main program is mainly the content that refreshes liquid crystal display screen display interface, as clock, content, real-time dimming ratio etc. are set;

2) in the time that point touching screen arranges, system judges click location with AD value, realizes user's the intention that arranges.

3) in time interrupt system, can inquire about:

(1) whether Startup time has arrived;

(2) whether stop the moment having arrived;

(3) soft opening or the duration of soft stop;

(4) be manual or auto state;

(5) realization of control dimming ratio.

Embodiment bis-:

A kind of sinewave dimmer of embedded system control, comprise man-machine dialog interface, embedded system, IGBT drive circuit and IGBT gate circuit, described embedded system is to IGBT drive circuit input pwm signal, by conducting and the cut-off of IGBT drive circuit control IGBT gate circuit, described man-machine dialog interface is for arranging and show the operational factor of dimmer, described embedded system also controls for inputting corresponding pwm signal according to the operational factor of the set dimmer of man-machine dialog interface to IGBT drive circuit the operational factor that man-machine dialog interface shows dimmer simultaneously, described IGBT drive circuit is exported to IGBT gate circuit and is controlled its open and close after the pwm signal receiving is amplified by two-stage, described IGBT gate circuit is for exporting to load circuit after the carrier wave stack of the sine wave alternating current of 220V and the output of IGBT drive circuit.

The operational factor of described dimmer comprise dimming ratio, time opening or close, date and clock setting.

Described IGBT gate circuit connects four diodes by an IGBT pipe and forms, and described IGBT drive circuit connects successively amplifying circuit, voltage stabilizing circuit and protective circuit by photoelectric coupling circuit and forms.

Described photoelectric coupling circuit is connected to form by current-limiting resistance R01 and photoelectrical coupler U20, described amplifying circuit comprises preamplifying circuit and rear class amplifying circuit, described preamplifying circuit adopts current-limiting resistance R202 to connect field effect transistor Q200, filter capacitor C201, resistance R 203 is as the G limit leakage resistance of field effect transistor Q200, resistance R 204 is the C limit leakage resistance of field effect transistor Q200, described rear class amplifying circuit comprises field effect transistor Q201 and field effect transistor Q202, resistance R 205 is connected with the field effect transistor Q201C utmost point as C limit leakage resistance, described rear class amplifying circuit also comprises and field effect transistor Q201, the energy storage capacitor C202 that field effect transistor Q202 and resistance R 205 connect, C203, C204, C205, C206, C207, described voltage stabilizing circuit is connected to form in the mode just aligning by voltage stabilizing didoe D1 and voltage stabilizing didoe D2, resistance R ge is IGBT pipe GE interpolar protective resistance, the GE interelectrode capacitance composition capacitance-resistance oscillating circuit of resistance R g and IGBT pipe.

Described embedded system comprises primary module and interrupt module, described primary module and initialization module, every m moves one time module second, every n/m moves a module and judges that Executive Module connects second, described judgement Executive Module and dimming state module, manually operation module, automatically controlling Executive Module connects, described interrupt module is connected with time cumulation module and Lookup protocol adjustment module, described initialization module is for the state that the above-mentioned all modules of initialization are set of the operational factor to dimmer according to man-machine dialog interface, described every m moves module second and carries out for every m the operational factor that once shows dimmer at man-machine dialog interface second, wherein m is integer, every n/m moves module second and carries out once second the operational factor of dimmer set man-machine dialog interface is exported to IGBT drive circuit for every n/m, and shows the operational factor of dimmer at man-machine dialog interface, and wherein n is integer, described judgement Executive Module is for starting and manually move module or automatically control Executive Module according to the state of dimming state module, described manual operation module and automatically control Executive Module are all for exporting to IGBT drive circuit by the operational factor of dimmer set man-machine dialog interface, the every T of described interrupt module starts time cumulation module and Lookup protocol Executive Module second, described time cumulation module is provided with concussion time set, for the cumulative time, described Lookup protocol Executive Module is for automatically controlling the execution parameter of Executive Module according to the status adjustment of dimming state module.

Described embedded system is made up of ARM7 or ARM9 chip, and described initialization module is used for carrying out the configuration of FSMC interface features.

The resistance of described current-limiting resistance R01 is 200 Ω, and current-limiting resistance R202 resistance is 350 Ω, and resistance R 203 resistances are 30 Ω, resistance R 204 resistances are 200 Ω, resistance R 205 resistances are 20 Ω, and resistance R g resistance is 20 Ω, and resistance R ge resistance is 10k Ω, photoelectrical coupler U20 is PS9701, field effect transistor Q200 is IRP530, and field effect transistor Q201 is IRF530, and field effect transistor Q202 is IRP9530, the puncture voltage of described voltage stabilizing didoe D1 is 9.1V, and the puncture voltage of voltage stabilizing didoe D2 is 15V.

The resistance of described current-limiting resistance R01 is 200 Ω, and current-limiting resistance R202 resistance is 350 Ω, and resistance R 203 resistances are 30 Ω, resistance R 204 resistances are 200 Ω, resistance R 205 resistances are 20 Ω, and resistance R g resistance is 20 Ω, and resistance R ge resistance is 10k Ω, photoelectrical coupler U20 is PS9701, field effect transistor Q200 is IRP530, and field effect transistor Q201 is IRF530, and field effect transistor Q202 is IRP9530, the puncture voltage of described voltage stabilizing didoe D1 is 9.1V, and the puncture voltage of voltage stabilizing didoe D2 is 15V.

Described embedded system is supplied with the voltage of 5V by the first Switching Power Supply (I) of 5V, described IGBT drive circuit by second switch power supply (II) to preamplifying circuit power supply 5V, and give rear class amplifying circuit supply ± 12V or ± voltage of 15V.

Utilize the sinewave dimmer of described a kind of embedded system control to realize a method for dimming function, it is characterized in that: comprise main program step and interrupt routine step, described main program step is carried out following steps in order:

Step 1: carry out the configuration of FSMC interface features;

Step 2: execution per second once shows the operational factor of dimmer at man-machine dialog interface;

Step 3: execution in every 0.6 second is once exported to IGBT drive circuit by the operational factor of dimmer set man-machine dialog interface;

Step 4: start and manually move module or automatically control Executive Module according to the state of dimming state module;

The every 0.5 millisecond of execution of described interrupt routine step once, is enjoyed the highest priority with respect to main program step, carries out in order following steps:

Step 1: cumulative time;

Step 2: the execution parameter of automatically controlling Executive Module according to the status adjustment of dimming state module.

Claims (10)

1. the sinewave dimmer of an embedded system control, it is characterized in that: comprise man-machine dialog interface, embedded system, IGBT drive circuit and IGBT gate circuit, described embedded system is to IGBT drive circuit input pwm signal, by conducting and the cut-off of IGBT drive circuit control IGBT gate circuit, described man-machine dialog interface is for arranging and show the operational factor of dimmer, described embedded system also controls for inputting corresponding pwm signal according to the operational factor of the set dimmer of man-machine dialog interface to IGBT drive circuit the operational factor that man-machine dialog interface shows dimmer simultaneously, described IGBT drive circuit is exported to IGBT gate circuit and is controlled its open and close after the pwm signal receiving is amplified by two-stage, described IGBT gate circuit is for exporting to load circuit after the carrier wave stack of the sine wave alternating current of 220V and the output of IGBT drive circuit.

2. the sinewave dimmer of a kind of embedded system control according to claim 1, is characterized in that: the operational factor of described dimmer comprise dimming ratio, time opening or close, date and clock setting.

3. the sinewave dimmer of a kind of embedded system control according to claim 1; it is characterized in that: described IGBT gate circuit connects four diodes by an IGBT pipe and forms, and described IGBT drive circuit connects successively amplifying circuit, voltage stabilizing circuit and protective circuit by photoelectric coupling circuit and forms.

4. the sinewave dimmer of a kind of embedded system control according to claim 4, it is characterized in that: described photoelectric coupling circuit is connected to form by current-limiting resistance R01 and photoelectrical coupler U20, described amplifying circuit comprises preamplifying circuit and rear class amplifying circuit, described preamplifying circuit adopts current-limiting resistance R202 to connect field effect transistor Q200, filter capacitor C201, resistance R 203 is as the G limit leakage resistance of field effect transistor Q200, resistance R 204 is the C limit leakage resistance of field effect transistor Q200, described rear class amplifying circuit comprises field effect transistor Q201 and field effect transistor Q202, resistance R 205 is connected with the field effect transistor Q201C utmost point as C limit leakage resistance, described rear class amplifying circuit also comprises and field effect transistor Q201, the energy storage capacitor C202 that field effect transistor Q202 and resistance R 205 connect, C203, C204, C205, C206, C207, described voltage stabilizing circuit is connected to form in the mode just aligning by voltage stabilizing didoe D1 and voltage stabilizing didoe D2, resistance R ge is IGBT pipe GE interpolar protective resistance, the GE interelectrode capacitance composition capacitance-resistance oscillating circuit of resistance R g and IGBT pipe.

5. according to the sinewave dimmer of a kind of embedded system control one of claim 1-4 Suo Shu, it is characterized in that: described embedded system comprises primary module and interrupt module, described primary module and initialization module, every m moves one time module second, every n/m moves a module and judges that Executive Module connects second, described judgement Executive Module and dimming state module, manually operation module, automatically controlling Executive Module connects, described interrupt module is connected with time cumulation module and Lookup protocol adjustment module, described initialization module is for the state that the above-mentioned all modules of initialization are set of the operational factor to dimmer according to man-machine dialog interface, described every m moves module second and carries out for every m the operational factor that once shows dimmer at man-machine dialog interface second, wherein m is integer, every n/m moves module second and carries out once second the operational factor of dimmer set man-machine dialog interface is exported to IGBT drive circuit for every n/m, and shows the operational factor of dimmer at man-machine dialog interface, and wherein n is integer, described judgement Executive Module is for starting and manually move module or automatically control Executive Module according to the state of dimming state module, described manual operation module and automatically control Executive Module are all for exporting to IGBT drive circuit by the operational factor of dimmer set man-machine dialog interface, the every T of described interrupt module starts time cumulation module and Lookup protocol Executive Module second, described time cumulation module is provided with concussion time set, for the cumulative time, described Lookup protocol Executive Module is for automatically controlling the execution parameter of Executive Module according to the status adjustment of dimming state module.

6. the sinewave dimmer of a kind of embedded system control according to claim 5, is characterized in that:

Described embedded system is made up of ARM7 or ARM9 chip, and described initialization module is used for carrying out the configuration of FSMC interface features.

7. the sinewave dimmer of a kind of embedded system control according to claim 6, is characterized in that:

The resistance of described current-limiting resistance R01 is 200 Ω, and current-limiting resistance R202 resistance is 350 Ω, and resistance R 203 resistances are 30 Ω, resistance R 204 resistances are 200 Ω, resistance R 205 resistances are 20 Ω, and resistance R g resistance is 20 Ω, and resistance R ge resistance is 10k Ω, photoelectrical coupler U20 is PS9701, field effect transistor Q200 is IRP530, and field effect transistor Q201 is IRF530, and field effect transistor Q202 is IRP9530, the puncture voltage of described voltage stabilizing didoe D1 is 9.1V, and the puncture voltage of voltage stabilizing didoe D2 is 15V.

8. the sinewave dimmer of a kind of embedded system control according to claim 7, is characterized in that:

The resistance of described current-limiting resistance R01 is 200 Ω, and current-limiting resistance R202 resistance is 350 Ω, and resistance R 203 resistances are 30 Ω, resistance R 204 resistances are 200 Ω, resistance R 205 resistances are 20 Ω, and resistance R g resistance is 20 Ω, and resistance R ge resistance is 10k Ω, photoelectrical coupler U20 is PS9701, field effect transistor Q200 is IRP530, and field effect transistor Q201 is IRF530, and field effect transistor Q202 is IRP9530, the puncture voltage of described voltage stabilizing didoe D1 is 9.1V, and the puncture voltage of voltage stabilizing didoe D2 is 15V.

9. the sinewave dimmer of a kind of embedded system control according to claim 7, is characterized in that:

Described embedded system is supplied with the voltage of 5V by the first Switching Power Supply (I) of 5V, described IGBT drive circuit by second switch power supply (II) to preamplifying circuit power supply 5V, and give rear class amplifying circuit supply ± 12V or ± voltage of 15V.

10. utilize the sinewave dimmer of a kind of embedded system control described in claim 5 to realize a method for dimming function, it is characterized in that: comprise main program step and interrupt routine step, described main program step is carried out following steps in order:

Step 1: carry out the configuration of FSMC interface features;

Step 2: execution per second once shows the operational factor of dimmer at man-machine dialog interface;

Step 3: execution in every 0.6 second is once exported to IGBT drive circuit by the operational factor of dimmer set man-machine dialog interface;

Step 4: start and manually move module or automatically control Executive Module according to the state of dimming state module;

The every 0.5 millisecond of execution of described interrupt routine step once, is enjoyed the highest priority with respect to main program step, carries out in order following steps:

Step 1: cumulative time;

Step 2: the execution parameter of automatically controlling Executive Module according to the status adjustment of dimming state module.

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