CN103780076A - High-power switching power source - Google Patents

High-power switching power source Download PDF

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CN103780076A
CN103780076A CN201410060884.XA CN201410060884A CN103780076A CN 103780076 A CN103780076 A CN 103780076A CN 201410060884 A CN201410060884 A CN 201410060884A CN 103780076 A CN103780076 A CN 103780076A
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module
circuit
oxide
metal
energy storage
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CN103780076B (en
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朱得亚
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Wuhu Lion Automotive Technologies Co Ltd
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SAIC Chery Automobile Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention discloses a high-power switching power source. The high-power switching power source comprises a PFC module and a DC-DC module. The PFC module comprises a first main circuit, a first control circuit and at least one of a first output current over-current protection circuit, an output voltage over-voltage and low-voltage protection circuit, a first over-temperature protection circuit and an output voltage over-voltage protection circuit. The DC-DC module comprises a second main circuit and a second control circuit. The PFC module comprises a first wireless transmitter module connected with the first control circuit. The DC-DC module comprises a second wireless transmitter module connected with the second control circuit. The PFC module and the DC-DC module receive and send information through the first wireless transmitter module and the second wireless transmitter module respectively. The communication among the PFC module, the DC-DC module and an external device can be achieved through the wireless transmitter modules, the external device can have remote access to the PFC module and the DC-DC module, and the whole switching power source can be conveniently maintained.

Description

A kind of high power switching power supply
Technical field
The present invention relates to switch power technology field, relate in particular to a kind of comprise power factor correction (PFC) module and direct voltage that utilizes radio communication and turn the high power switching power supply of direct voltage (DC-DC) module.
Background technology
High power switching power supply circuit generally includes two modules: front end PFC (power factor correction) module and rear end DC-DC (direct voltage turns direct voltage) module.Wherein, PFC module realizes the conversion of alternating voltage to direct voltage, such as, 220V alternating voltage is converted to 380-390V direct voltage.DC-DC module realizes the direct voltage of PFC module output to the conversion of the direct voltage of actual needs, such as, 380V direct voltage is converted to 290V-360V direct voltage.PFC module has the protective circuits such as overcurrent protection, overvoltage protection, under-voltage protection and overheat protector conventionally.After detecting fault by these protective circuits, PFC module needs broken down corresponding failure code to send to the DC-DC module of rear end, so that the failure code that DC-DC module sends according to PFC module is carried out corresponding operating (such as shutdown) and realize the self-protection function of system.Therefore, between traditional PFC module and DC-DC module, be conventionally furnished with a lot of signal connecting lines, for by PFC transmitting fault information to DC-DC module, thereby cause the inner cabling complexity of whole Switching Power Supply, be difficult for assembling.From system fault diagnosis angle, be also difficult for learning the particular location of internal system fault simultaneously.
Summary of the invention
The invention discloses a kind of high power switching power supply, it comprises that power factor correction module and direct voltage turn direct voltage module, described power factor correction module comprises the first main circuit, first control circuit, with the first output current current foldback circuit, input voltage overvoltage, under-voltage protecting circuit, at least one protective circuit in the first thermal-shutdown circuit and output voltage overvoltage crowbar, described direct voltage turns direct voltage module and comprises the second main circuit and second control circuit, it is characterized in that, described power factor correction module also comprises the first wireless transmitter module being connected with first control circuit, described direct voltage turns direct voltage module and also comprises the second wireless transmitter module being connected with second control circuit, described power factor correction module and described direct voltage turn direct voltage module and receive and send messages by the first wireless transmitter module and the second wireless transmitter module respectively.
Preferably, described direct voltage turns direct voltage module and also comprises at least one protective circuit in input current current foldback circuit, the second output current current foldback circuit and the second thermal-shutdown circuit.
Preferably, described power factor correction module is active power factor correction module.
Preferably, described the first main circuit comprises the first rectifier bridge, the first alternating expression energy storage inductor, the second alternating expression energy storage inductor, the first rectifier diode, the second rectifier diode, the first metal-oxide-semiconductor, with the second metal-oxide-semiconductor, described the first alternating expression energy storage inductor and described the first rectifier diode form Chuan road and described the second alternating expression energy storage inductor and described the second rectifier diode and form Chuan road and connect, the output of described the first rectifier bridge accesses the anode of described the first rectifier diode and the anode of the second rectifier diode through the first alternating expression energy storage inductor and the second alternating expression energy storage inductor respectively, the source class of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor is connected respectively the output of described the first alternating expression energy storage inductor and described the second alternating expression energy storage inductor, the grounded drain of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor, the grid of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor is by described first control circuit control.
Preferably; described first control circuit comprises the first single-chip microcomputer and Power Factor Correction Control chip; described the first single-chip microcomputer and Power Factor Correction Control chip are connected to each other; at least one protective circuit in the described power factor correction module at described the first single-chip microcomputer and its place is connected; described Power Factor Correction Control chip is connected with the first metal-oxide-semiconductor in the first main circuit and the grid of described the second metal-oxide-semiconductor, and described the first single-chip microcomputer is connected with described the first wireless transmitter module.
Preferably, described the first single-chip microcomputer is connected by spi bus with described the first wireless transmitter module.
Preferably, described the second main circuit comprises the H bridge circuit being made up of four metal-oxide-semiconductors, transformer, the second rectifier bridge, energy storage inductor, the first energy storage filter capacitor and the second energy storage filter capacitor of holding concurrently of holding concurrently, the output voltage of described the first main circuit accesses the elementary of described transformer through described H bridge circuit, the secondary output of described transformer is after the second rectifier bridge rectification, again through described energy storage inductor, described the first energy storage filter capacitor and described the second energy storage laggard line output of filter capacitor filtering of holding concurrently of holding concurrently, and described second control circuit is by being connected to control described H bridge circuit with the grid of four metal-oxide-semiconductors in described H bridge.
Preferably, described second control circuit comprises second singlechip, soft switch control chip and H bridge drive chip, described second singlechip and soft switch control chip are connected to each other, described soft switch control chip and H bridge drive chip to interconnect, described H bridge drives the grid of four metal-oxide-semiconductors described in the H bridge of chip and described the second main circuit to be connected, and described second singlechip is connected with at least one protective circuit that the described direct voltage at its place turns in direct voltage module, described soft switch control chip is by the H bridge circuit in the second main circuit described in the control of described H bridge driving chip drives, described second singlechip is connected with described the second wireless transmitter module.
Further preferably, described second singlechip is connected by spi bus with described the second wireless transmitter module.
Preferably, described the first wireless transmitter module and the second wireless transmitter module adopt NRF2401, NRF903 or CC1020 chip.
The present invention by arranging wireless transmitter module in PFC module and DC-DC module, and receive and dispatch and represent that the failure code of inner concrete fault realizes the failure code transmission between PFC module, DC-DC module and failure diagnostic apparatus three by wireless transmitter module, thereby reduce the wiring between PFC module and DC-DC module, facilitate assembling, also can improve the diagnosis efficiency of the system failure simultaneously.
Technique effect of the present invention is as follows:
(1) reduce the line of Switching Power Supply inside, be convenient to the layout of space element;
(2) by the sampled result of protective circuit (comprising critical condition (threshold value) and the corresponding operating thereof of overcurrent protection, overvoltage protection, under-voltage protection and/or overheat protector etc.), utilize wireless transmitter module to realize the communication between PFC module and DC-DC module by single-chip microcomputer or DSP;
(3), by each protective circuit and control circuit in PFC module, realize main circuit output current overcurrent in PFC module, input voltage overvoltage and under-voltage, output voltage overvoltage and/or overheat protector function;
(4), by each protective circuit and control circuit in DC-DC module, realize input current overcurrent, output current overcurrent and/or the overheat protector function of DC-DC module main circuit; And
(5) can also utilize wireless transmitter module to external equipment such as failure diagnostic apparatus sends information, realize the remote access of external equipment to protective circuit working condition in PFC module and DC-DC module, realize the remote diagnosis of the fault point of PFC module and DC-DC inside modules, be convenient to the maintenance to whole Switching Power Supply; By wireless module, can on the monitoring interface of external equipment, programme to PFC module and DC-DC module protection threshold values simultaneously.
Accompanying drawing explanation
Below, in connection with accompanying drawing to being elaborated according to the specific embodiment of the present invention, wherein:
Fig. 1 is the circuit theory diagrams of the APFC module of the embodiment of the present invention;
Fig. 2 is the circuit theory diagrams of the main circuit of the DC-DC module of the embodiment of the present invention; With
Fig. 3 is the control circuit of DC-DC module and the circuit theory diagrams of wireless transmitter module of the embodiment of the present invention.
Embodiment
Power factor correction (PFC) module in the present invention can be Active Power Factor Correction (APFC) module or PPFC (Passive Power Factor Correction) (PPFC) module, at this, describes as an example of APFC module example.But, should be understood that, the present invention also can be applicable to PPFC module.
Fig. 1 is the circuit theory diagrams of APFC module.As shown in Figure 1, APFC module comprises APFC main circuit MC, APFC control circuit CC and wireless transmitter module RF1.Wherein, APFC main circuit MC comprises rectifier bridge 1, alternating expression energy storage inductor L1, alternating expression energy storage inductor L2, rectifier diode D1, rectifier diode D2, filter capacitor C4, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2.Preferably, in order to realize the constant voltage output of APFC, APFC main circuit MC also comprises the voltage close loop control sample circuit being made up of resistance R 8 and resistance R 9.APFC control circuit CC comprises interleaved PFC control chip U3 and single-chip microprocessor MCU 1.
Energy storage inductor L1 and rectifier diode D1 form Chuan road and energy storage inductor L2 and rectifier diode D2 and form Chuan road and connect, first alternating current AC carries out rectification through rectifier bridge 1, voltage after rectification is respectively through the anode of energy storage inductor L1 and energy storage inductor L2 access rectifier diode D1 and rectifier diode D2, voltage input filter storage capacitor C4 after rectifier diode D1 and rectifier diode D2 rectification, the voltage at filtering energy storage capacitor C 4 two ends is input to the FB pin of interleaved PFC control chip U3 after the resistance R 8 in voltage close loop control sample circuit and R9 dividing potential drop.Particularly, the resistance R 8 of connecting in voltage close loop control sample circuit and R9 and filter capacitor C4 form parallel circuits, the negative electrode of one end of this parallel circuits and diode D1 and D2, and the other end is connected to zero potential.Metal-oxide-semiconductor Q1 and the source class of metal-oxide-semiconductor Q2 are connected respectively the output of energy storage inductor L1 and energy storage inductor L2, the grounded drain of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2, the grid of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is connected with GD1 pin and the GD2 pin of interleaved PFC control chip U3 respectively, to produce the control signal to metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 by interleaved PFC control chip U3, thereby realize the constant voltage output of APFC module.
Preferably, APFC main circuit MC also comprises the output current over-current detection circuit of the APFC module being made up of resistance R 12.The CS1 pin of current sampling signal (overcurrent sampled signal) the CS1 access single-chip microprocessor MCU 1 of output current over-current detection circuit.In the time that single-chip microprocessor MCU 1 detects that the amplitude of current sampling signal CS1 exceedes single-chip microprocessor MCU 1 interior predefined threshold value, single-chip microprocessor MCU 1 output low level signal is to the SS pin of interleaved PFC control chip U3, to close whole APFC module.
Preferably, APFC main circuit MC also comprises that the input voltage of the APFC module being made up of resistance R 13, R14 is under-voltage, overvoltage crowbar, between this input voltage is under-voltage, overvoltage crowbar is connected in rectifier bridge 1 output and ground.Particularly, the voltage after rectifier bridge 1 rectification produces voltage sampling signal (overvoltage, under-voltage sampled signal) after resistance R 13 and R14 dividing potential drop, and is linked into the OVP/UVP pin of single-chip microprocessor MCU 1.
Preferably, APFC main circuit MC also comprises the output voltage overvoltage crowbar of the APFC module being made up of divider resistance R6 and R7, and this output voltage overvoltage crowbar is connected to the two ends of filter capacitor C4.Particularly, the output voltage PFC of APFC main circuit MC produces voltage sampling signal after resistance R 6 and R7 dividing potential drop, and is linked into the OVP2 pin of interleaved PFC control chip U3.
Preferably, APFC control circuit CC also comprises the thermal-shutdown circuit of the APFC module being made up of resistance R 15 and thermistor NTC2, and this thermal-shutdown circuit is connected between voltage VCC and ground.Particularly, voltage VCC produces voltage sampling signal (excess temperature sampled signal) after resistance R 15 and thermistor NTC2 dividing potential drop, and is linked into the pin AD0 of single-chip microprocessor MCU 1.Thermistor NTC2 preferably adopts the thermistor of negative temperature coefficient.Because metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 are the highest positions of temperature in whole APFC module; therefore in concrete enforcement, thermistor NTC2 is attached to metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 place; for metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 are carried out to overheat protector, thereby realize the overheat protector to APFC module.
Between single-chip microprocessor MCU 1 and wireless transmitter module RF1, adopt spi bus to communicate by letter, single-chip microprocessor MCU 1 periodically detects excess temperature sampled signal AD0, overcurrent sampled signal CS1, and overvoltage, under-voltage sampled signal OVP/UVP, and the fault message obtaining according to sample information is sent to failure diagnostic apparatus by wireless transmitter module RF1, be convenient to the long-range reception of failure diagnostic apparatus line real time diagnosis, offer the corresponding guard signal of DC-DC module simultaneously, so that DC-DC module is carried out accordingly (presetting) processing according to received guard signal, such as closing processing, thereby protect the DC-DC module of rear end.Preferably, in single-chip microprocessor MCU 1, can encode and form the malfunction coding corresponding with fault message fault message, and malfunction coding is stored.Particularly, the fault message that single-chip microprocessor MCU 1 can obtain according to sample information is sent to failure diagnostic apparatus by corresponding malfunction coding by wireless transmitter module RF1, and offers DC-DC module.
In the present embodiment, interleaved PFC control chip U3 preferably adopts R2A20104 chip, and single-chip microprocessor MCU 1 preferably adopts XC878 chip.
DC-DC module comprises main circuit, control circuit and wireless transmitter module RF2.
Fig. 2 is the circuit theory diagrams of the main circuit of DC-DC module.As shown in Figure 2, the main circuit of DC-DC module comprises the H bridge circuit, transformer T1, rectifier bridge 2, energy storage inductor L3 and the energy storage that are made up of metal-oxide-semiconductor Q3, metal-oxide-semiconductor Q4, metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6 hold concurrently capacitor C 2 and the capacitor C 3 of filtering.The output voltage PFC of APFC main circuit MC is imposed on to H bridge circuit, the H bridge that in H bridge circuit, each metal-oxide-semiconductor Q3, metal-oxide-semiconductor Q4, metal-oxide-semiconductor Q5 and the grid of metal-oxide-semiconductor Q6 are connected in the control circuit of DC-DC module drives chip (will describe thereafter), to drive each metal-oxide-semiconductor Q3, metal-oxide-semiconductor Q4, metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6 by this driving chip controls.The voltage that the output voltage PFC of APFC main circuit MC produces after H bridge circuit is input to the elementary of transformer T1, secondary the produced voltage of transformer T1 is by rectifier bridge 2 rectifications, and the voltage after rectification is output as VOUT after the capacitor C 2 of filtering and capacitor C 3 filtering are held concurrently in energy storage inductor L3 and energy storage.
Preferably, the main circuit of DC-DC module also comprises the input current current foldback circuit of the DC-DC module being made up of R1.Input current current foldback circuit generation current sampled signal (overcurrent sampled signal) CS3 of this DC-DC module, and access the single-chip microprocessor MCU 2 in DC-DC module control circuit---CS3 pin.
Preferably, the main circuit of DC-DC module also comprises the output current current foldback circuit of the DC-DC module being made up of R2, and the output current current foldback circuit of this DC-DC module is connected between the direct current output negative pole and zero potential of rectifier bridge 2.The output current current foldback circuit generation current sampled signal CS2 of this DC-DC module, and access the CS2 pin of the soft switch control chip U4 in DC-DC module control circuit.
Fig. 3 is the control circuit of DC-DC module and the circuit theory diagrams of wireless transmitter module RF2.As shown in Figure 3, the control circuit of DC-DC module comprises that single-chip microprocessor MCU 2, soft switch control chip U4 and H bridge drive chip.In the time that single-chip microprocessor MCU 2 detects that the amplitude of current sampling signal CS3 signal exceedes the threshold value setting in advance in single-chip microprocessor MCU 2, single-chip microprocessor MCU 2 is the SS pin to soft switch control chip U4 by output low level signal, SS pin is dragged down, thereby drive chip to close whole DC-DC module by H bridge.In the time that soft switch control chip U4 detects that the amplitude of current sampling signal CS2 signal exceedes the threshold value setting in advance in soft switch control chip U4, soft switch control chip U4 drags down its DR1 pin, DR2 pin, DR3 pin and DR4 pin immediately, thereby drives chip to close whole DC-DC module by H bridge.
In addition, preferably, the control circuit of DC-DC module also comprises the thermal-shutdown circuit of the DC-DC module being made up of resistance R 3, thermistor NTC1, and this thermal-shutdown circuit is connected between voltage VCC and ground.Particularly, voltage VCC produces voltage sampling signal (excess temperature sampled signal) after resistance R 3 and thermistor NTC1 dividing potential drop, the AD0 pin of this voltage sampling signal (excess temperature sampled signal) access single-chip microprocessor MCU 2.Thermistor NTC1 preferably adopts the thermistor of negative temperature coefficient.Surveying metal-oxide-semiconductor Q4 (soft switch phase shift H bridge forearm pipe) in the whole circuit of finding DC-DC module in test is the highest position of temperature in DC-DC module; therefore; in an embodiment thermistor NTC1 is attached to metal-oxide-semiconductor Q4 place; for metal-oxide-semiconductor Q4 is carried out to overheat protector, thereby realize the overheat protector to DC-DC module.Between single-chip microprocessor MCU 2 and wireless transmitter module RF2, adopt spi bus to communicate by letter, single-chip microprocessor MCU 2 periodically detects excess temperature sampled signal AD0 and overcurrent sampled signal CS3, and the fault message obtaining according to sample information is sent to failure diagnostic apparatus by wireless transmitter module RF2, be convenient to the long-range reception of failure diagnostic apparatus line real time diagnosis.Similarly, single-chip microprocessor MCU 2 can be encoded and forms malfunction coding and malfunction coding is stored fault message.The fault message that single-chip microprocessor MCU 2 can obtain according to sample information is sent to failure diagnostic apparatus by corresponding malfunction coding by wireless transmitter module RF2.
In the present invention, H bridge drives chip preferably to adopt Ucc27324 chip.Soft switch control chip U4 preferably adopts UCC2895 chip.Wireless transmitter module RF1 and wireless transmitter module RF2 preferably adopt NRF2401 chip, NRF903 chip or CC1020 chip.What in the above-described embodiments, wireless transmitter module RF1 and wireless transmitter module RF2 adopted is NRF2401 chip and carries out wireless short-range communication with 2.4GH frequency range.The peripheral circuit configuration of NRF2401 chip is simple, with low cost, and frequency range 2.4GH strong anti-interference performance, is therefore suitable for the frequency range as data communication in switching circuit source.
In addition, in the above-described embodiments, single-chip microprocessor MCU 1 and single-chip microprocessor MCU 2 transmit by wireless transmitter module RF1 and wireless transmitter module RF2 the corresponding malfunction coding of fault message obtaining according to sample information respectively.Form the malfunction coding corresponding with this fault message and be stored as prior art due to fault message is encoded, so, be not elaborated in this article.Be understood that, single-chip microprocessor MCU 1 and all right certain time interval of single-chip microprocessor MCU 2, periodically the information of the operating state obtaining according to sample information (comprising normal information and fault message) is sent to external monitoring device (comprising failure diagnostic apparatus and other external equipment), thereby realize the remote access of external monitoring device to PFC module and DC-DC module, to understand better the operating state of Switching Power Supply.In addition, it should be understood that by wireless module, can also on the monitoring interface of outside monitoring device, programme to the threshold values of PFC module and DC-DC module protection, thereby the threshold values of PFC module and DC-DC module protection is modified and controlled.Due to the threshold values of PFC module and DC-DC module protection is programmed for to prior art, so, do not repeat them here.
Below with reference to drawings and Examples, the present invention be have been described in detail, still, should be appreciated that, the present invention is not limited to above disclosed exemplary embodiment.Should give claim to explain the most widely, to contain all modification, equivalent structure and the function of disclosed exemplary embodiment.

Claims (10)

1. a high power switching power supply, it comprises that power factor correction module and direct voltage turn direct voltage module, described power factor correction module comprises the first main circuit, first control circuit, with the first output current current foldback circuit, input voltage overvoltage, under-voltage protecting circuit, at least one protective circuit in the first thermal-shutdown circuit and output voltage overvoltage crowbar, described direct voltage turns direct voltage module and comprises the second main circuit and second control circuit, it is characterized in that, described power factor correction module also comprises the first wireless transmitter module being connected with first control circuit, described direct voltage turns direct voltage module and also comprises the second wireless transmitter module being connected with second control circuit, described power factor correction module and described direct voltage turn direct voltage module and receive and send messages by the first wireless transmitter module and the second wireless transmitter module respectively.
2. high power switching power supply according to claim 1; it is characterized in that, described direct voltage turns direct voltage module and also comprises at least one protective circuit in input current current foldback circuit, the second output current current foldback circuit and the second thermal-shutdown circuit.
3. high power switching power supply according to claim 1 and 2, is characterized in that, described power factor correction module is active power factor correction module.
4. high power switching power supply according to claim 3, it is characterized in that, described the first main circuit comprises the first rectifier bridge, the first alternating expression energy storage inductor, the second alternating expression energy storage inductor, the first rectifier diode, the second rectifier diode, the first metal-oxide-semiconductor, with the second metal-oxide-semiconductor, described the first alternating expression energy storage inductor and described the first rectifier diode form Chuan road and described the second alternating expression energy storage inductor and described the second rectifier diode and form Chuan road and connect, the output of described the first rectifier bridge accesses the anode of described the first rectifier diode and the anode of the second rectifier diode through the first alternating expression energy storage inductor and the second alternating expression energy storage inductor respectively, the source class of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor is connected respectively the output of described the first alternating expression energy storage inductor and described the second alternating expression energy storage inductor, the grounded drain of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor, the grid of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor is by described first control circuit control.
5. high power switching power supply according to claim 4; it is characterized in that; described first control circuit comprises the first single-chip microcomputer and Power Factor Correction Control chip; described the first single-chip microcomputer and Power Factor Correction Control chip are connected to each other; at least one protective circuit in the described power factor correction module at described the first single-chip microcomputer and its place is connected; described Power Factor Correction Control chip is connected with the first metal-oxide-semiconductor in the first main circuit and the grid of described the second metal-oxide-semiconductor, and described the first single-chip microcomputer is connected with described the first wireless transmitter module.
6. high power switching power supply according to claim 5, is characterized in that, described the first single-chip microcomputer is connected by spi bus with described the first wireless transmitter module.
7. according to the high power switching power supply described in claim 1-6 any one, it is characterized in that, described the second main circuit comprises the H bridge circuit being made up of four metal-oxide-semiconductors, transformer, the second rectifier bridge, energy storage inductor, the first energy storage filter capacitor and the second energy storage filter capacitor of holding concurrently of holding concurrently, the output voltage of described the first main circuit accesses the elementary of described transformer through described H bridge circuit, the secondary output of described transformer is after the second rectifier bridge rectification, again through described energy storage inductor, described the first energy storage filter capacitor and described the second energy storage laggard line output of filter capacitor filtering of holding concurrently of holding concurrently, and described second control circuit is by being connected to control described H bridge circuit with the grid of four metal-oxide-semiconductors in described H bridge.
8. high power switching power supply according to claim 7, it is characterized in that, described second control circuit comprises second singlechip, soft switch control chip and H bridge drive chip, described second singlechip and soft switch control chip are connected to each other, described soft switch control chip and H bridge drive chip to interconnect, described H bridge drives the grid of four metal-oxide-semiconductors described in the H bridge of chip and described the second main circuit to be connected, and described second singlechip is connected with at least one protective circuit that the described direct voltage at its place turns in direct voltage module, described soft switch control chip is by the H bridge circuit in the second main circuit described in the control of described H bridge driving chip drives, described second singlechip is connected with described the second wireless transmitter module.
9. high power switching power supply according to claim 8, is characterized in that, described second singlechip is connected by spi bus with described the second wireless transmitter module.
10. according to the high power switching power supply described in claim 1-6,8-9 any one, it is characterized in that, described the first wireless transmitter module and the second wireless transmitter module adopt NRF2401, NRF903 or CC1020 chip.
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CN105591356A (en) * 2016-03-07 2016-05-18 青岛歌尔声学科技有限公司 Overvoltage and undervoltage protection circuit
CN107565810A (en) * 2017-08-16 2018-01-09 安徽南瑞中天电力电子有限公司 A kind of strong load capacity protocol converter of High Power Factor and its control strategy

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