CN103777554A - Hot swap protection circuit system - Google Patents
Hot swap protection circuit system Download PDFInfo
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- CN103777554A CN103777554A CN201410044950.4A CN201410044950A CN103777554A CN 103777554 A CN103777554 A CN 103777554A CN 201410044950 A CN201410044950 A CN 201410044950A CN 103777554 A CN103777554 A CN 103777554A
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Abstract
A hot swap protection circuit system comprises multiple integrated circuits and a mainframe module. Each integrated circuit comprises a protection module, an on-off module, an on-off control module and a control interface module, wherein the control interface module and the mainframe module are mutually connected through a bus. The input end of each on-off module is connected with a load power source outside the corresponding integrated circuit, and the output end of each on-off module is connected with a load outside the corresponding integrated circuit. The protection modules are used for performing real-time detection on the on-off modules. If the detection result exceeds a standard value, an action command requesting protection is transmitted to the control interface modules. The control interface modules are used for transmitting a protection action command to the on-off control modules and transmitting fault information to the mainframe modules. The on-off control modules are used for receiving the protection action command to the control interface modules to control on-off of the on-off modules. The mainframe modules are used for storing addresses of the integrated circuits where faults happen.
Description
Technical field
The application relates to a kind of method of electric protection circuit, relates in particular to a kind of distributed heat plug Hot Swap protection circuit method that adopts integrated circuit (IC)
Background technology
The application of hot plug Hot Swap circuit design is very extensive, and effect is the components and parts of the equipment to hot plug, a kind of safeguard measure of chip.In the time that the electric parameter of load exceedes its working stamndard, Hot Swap can deenergization, has reached the object of protection electronic equipment.
Current Hot Swap circuit is all to take discrete element to carry out the stacking specific function that realizes, circuit is comparatively complicated, design parameter is various, and because the error of discrete components and parts itself is larger, electrical specification distribution consistance is also poor, moreover because element is many, the chance that each sensitive signal is disturbed in the time of PCB layout just increases, cause circuit precision, signal integrity reduces, also increased electromagnetic interference (EMI), particularly in high-power system, single discrete component bears power limited, this just needs the parallel connection of many group circuits to carry out practical function, cause the stack of the very big rising of cost and failure rate and error, to design initial stage or all very large hidden danger of existence of later stage batch production.These factors all can weaken stability and the security of electronic product, have virtually increased cost, also can affect the competitive power of product.
In the time that a Hot Swap Circuits System contains multiple load, each load has a Hot Swap device switch protection, when one of them load is broken down, such as the electric current value of being above standard, its Hot Swap protective device deenergization, has protected load.But in follow-up maintenance process, how to search fast and to determine this trouble spot, in prior art, there is no the scheme solving.
Therefore research staff will consider in the time that hardware breaks down in the time of design; how to realize accurately and detecting; to protect whole circuit to be without prejudice on the one hand; also to help on the other hand maintainer to locate fast trouble spot; so that rapidly removing faults, reliability service and the personal safety as well as the property safety of assurance system.And the Hot Swap protection circuit of main flow is comparatively complicated now, manufacturing cost is higher, and design flexibility and reliability have a lot of drawbacks.In order to address the above problem, should protect whole circuit to be without prejudice, help again maintainer to locate fast trouble spot, so that rapidly removing faults, reliability service and the personal safety as well as the property safety of assurance system.The application provides a kind of cost lower; easily layout; fiduciary level is good; manageable Hot Swap protection circuit method and system; for Hot Swap circuit, utilize the Integrated Trait of IC integrated circuit to solve existing technical matters integrated circuit (IC) (integrated circuit).
Summary of the invention
The present invention announced a kind of by high density integrated circuit having IC realize distributed, targeted, be easy to management Hot Swap protection circuit scheme.
A kind of hot plug Hot Swap protection circuit system, comprises multiple integrated circuit, host module; Wherein each described integrated circuit comprises respectively: protection module, switch module, gauge tap module, control interface module; Described control interface module is by bus and the interconnection of described host module;
The input end of described switch module is connected with the load power source of integrated circuit outside, and the output terminal of described switch module is connected with the load of integrated circuit outside;
Described protection module is for detecting in real time the parameter value of described switch module, testing result is transported to control interface module, also, for testing result is judged, if testing result exceeds the scope of standard value, send request protection action command to described control interface module;
Described control interface module is for receiving after the request protection action command of described protection module transmission, send protection action command to described gauge tap module, record trouble message, sends failure message, the address of wherein carrying the integrated circuit at place to host module;
Described gauge tap module is for controlling conducting and the shutoff of described switch module; When gauge tap module receives the protection action command of described control interface module, control the shutoff of input end and the output terminal of described switch module;
The address of described host module for storing the integrated circuit breaking down.
Alternatively, described switch module is mos field effect transistor MOSFET; The source electrode of described MOSFET is connected with described load as the input end of switch module, and drain electrode is connected with described load power source as the output terminal of switch module.
Alternatively, described protection module comprises current sensor, overcurrent protection OCP module;
Described current sensor, for detection of the current value of described switch module, is converted to electric signal by current value and sends described OCP module to;
The electric signal that described OCP module is used for forwarding described current sensor detection is to described control interface module; and judge whether described electric signal exceedes the standard value of electric current; if exceed the standard value of electric current, report request protection action command to described control interface module.
Alternatively; described protection module comprises overvoltage protection OVP module; described OVP module is for detection of input end or the output end voltage of described switch module; judge whether described input end or output end voltage exceed the upper limit of the standard value of input voltage or output voltage; if exceed the upper limit of the standard value of input voltage or output voltage, send request protection action command to described control interface module.
Alternatively, described protection module comprises input end under-voltage protection VIN UVLO module; Described VIN UVLO module, for detection of the voltage of switch module input end, is prescribed a time limit lower than the lower of standard value of input voltage when described input terminal voltage, sends request protection action command to described control interface module.
Alternatively; described protection module comprises under-voltage protection VDD UVLO module; described VDD UVLO module is for detection of the voltage of the integrated circuit pin VDD being connected with external integrated power supply; when the value of the voltage of pin VDD is during lower than threshold value, send request protection action command to described control interface module.
Alternatively, described switch control module comprises field effect transistor FET control module and field effect transistor FET driver module; Described field effect transistor FET control module comprises grid electrode drive module, grid under-voltage protection Gate UVLO module, starts under-voltage protection Boost UVLO module, soft-start module;
Described grid electrode drive module is for arranging the cut-in voltage of described switch module;
The opening time of described soft-start module for limiting described switch module;
Described grid under-voltage protection Gate UVLO module is for carrying out under-voltage protection to the grid voltage of described switch module;
Described startup under-voltage protection Boost UVLO module is for carrying out under-voltage protection to the pin VBST of integrated circuit;
Described field effect transistor FET driver module is used to described switch module to provide driving voltage to order about switch module work.
Alternatively, described control interface module comprises electrification reset POR module, and described POR module is for storage failure information, and described failure message comprises fault type.
Alternatively, described host module is also for storing the address of each integrated circuit; Described host module is connected with the control interface module of each integrated circuit by PMbus bus; In the time receiving the failure message that integrated circuit sends, preserve this failure message corresponding with the address of corresponding integrated circuit;
Alternatively, described IC interior also comprises temperature sensor, and described temperature sensor detects the working temperature of described switch module, using described temperature value as electric signal transmission to control interface module.
Embodiments of the invention are realized Hot Swap function by integrated circuit (IC), have overcome that current HotSwap design element number of packages is more, principle design and layout cloth, local anaesthesia is tired and circuit is easily disturbed shortcoming; With respect to discrete element, the electrical specification consistance of integrated circuit (IC) is very high, adopt advanced detection method current detection accuracy can be controlled at ± 1%.And traditional detection mode is ± 5%; With distributed structure/architecture, by PMBus real-time report rear end load state, allow system load balancing regulate easier, more timely; When certain node has triggered protection mechanism, integrated circuit (IC) can be made a response rapidly, to protect back-end chip not to be damaged.Report abort situation simultaneously, be convenient to safeguard, after trouble shooting, can normally work by immediate recovery; Monitor in real time the electric current of each integrated circuit node circuit by PMBus bus, the one typical case application scheme of voltage condition.Some Hot Swap node occurs when abnormal taking targetedly safeguard measure therein, and then the continuous working of the system of assurance, improves reliability.
Accompanying drawing explanation
Fig. 1 is the reference principle framework figure of integrated circuit (IC) of the present invention inside;
Fig. 2 is typical practical applications Organization Chart of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the application's technical scheme is described in detail.
It should be noted that, if do not conflicted, each feature in the embodiment of the present application and embodiment can mutually combine, all within the application's protection domain.In addition, although there is shown logical order in flow process, in some cases, can carry out shown or described step with the order being different from herein.
A kind of hot plug Hot Swap protection circuit system, comprises multiple integrated circuit, host module; Wherein each described integrated circuit comprises respectively: protection module, switch module, gauge tap module, control interface module; Described control interface module is by bus and the interconnection of described host module;
The input end of described switch module is connected with the load power source of integrated circuit outside, and the output terminal of described switch module is connected with the load of integrated circuit outside;
Described protection module is for detecting in real time described switch module, testing result is transported to control interface module, also for testing result is judged, if the testing result value of being above standard sends request protection action command to described control interface module;
Described control interface module is for receiving after the request protection action command of described protection module transmission, send protection action command to described gauge tap module, record trouble message, sends failure message, the address of wherein carrying the integrated circuit at place to host module;
Described gauge tap module, for receiving the protection action command of described control interface module, is controlled the input end of described switch module and the conducting of output terminal and shutoff;
The address of described host module for storing the integrated circuit breaking down.
Below in conjunction with Fig. 1, performance is described.
Fig. 1 is the reference principle framework figure of the application's integrated circuit (IC) inside,
Described switch module is mos field effect transistor MOSFET; The source electrode of described MOSFET is connected with described load as the input end of switch module, and drain electrode is connected with described load power source as the output terminal of switch module.
Metal-oxide layer semiconductor field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) is a kind of field effect transistor (field-effect transistor) that can be widely used in mimic channel and digital circuit.MOSFET, according to the polarity difference of its " passage ", can be divided into the MOSFET of " N-type " and " P type ", is conventionally called again NMOSFET and PMOSFET, and other are called for short and still comprise NMOS FET, PMOS FET, nMOSFET, pMOSFET etc.
MOSFET has three electrode: G (grid), S(source electrode) and D(drain electrode).
In the time that enough large potential difference (PD) imposes between the grid G of MOSFET and source S, between source S and drain electrode, can form current channel, MOSFET can allow electric current pass through, and according to the magnitude of voltage difference that imposes on grid G, the size of current that can be flow through by the passage of MOSFET also can be subject to its control and change.
Current channel conducting between the source S that MOSFET conducting refers to and drain D, source S connects outside load, and drain D connects external power source, can think that MOSFET conducting meeting establishes a connection outside load and external power source;
After MOSFET conducting, flow through electric current between source S and drain D and, by the magnitude of voltage control according to imposing on grid G, can think after MOSFET conducting, by controlling according to the magnitude of voltage that imposes on grid G the electric current that flows through integrated circuit external loading and external power source.
MOSFET turn-offs and refers to that between source S and drain D, current channel turn-offs.Source S connects outside load, and drain D connects external power source, can think that MOSFET shutoff can make outside load and external power source cancel annexation.
Described protection module comprises current sensor, overcurrent protection OCP module;
Described current sensor, for detection of the current value of described switch module, is converted to electric signal by current value and sends described OCP module to;
The electric signal that described OCP module is used for forwarding described current sensor detection is to described control interface module; and judge whether described electric signal exceedes the standard value of electric current; if exceed the standard value of electric current, report request protection action command to described control interface module.
IC interior is divided into five modules, switch module, protection module, field effect transistor FET control module, field effect transistor FET driver module and control interface module.
Switch module, adopts MOSFET, and MOSFET is as switch application, and when conducting, external loading is connected with external loading power supply, and can control the electric current that flows through external loading and external power source; When MOSFET turn-offs, external loading and external power source disconnect.
The VIN pin of integrated circuit, the namely input end of switch module, connects outside load power source,
The VOUT pin of integrated circuit, namely the output terminal of switch module connects outside load.
Protection module is by having following functions with lower module:
Current sense function; realize by current sensor; current sensor detects by described MOSFET current value size; MOSFET electric current namely refers to the electric current that flows through source S and drain D; also the electric current that can think to flow through external loading and external power source, current information is fed back to protection module by current sensor.
Overcurrent protection OCP: the current information detecting according to current sensor determines whether and reaches maximum current; signal to control interface module when reaching after maximum current, control interface module is turn-offed by field effect transistor FET control module and field effect transistor FET driver module control MOSFET.
Described protection module comprises overvoltage protection OVP module; described OVP module is for detection of input end or the output end voltage of described switch module; judge whether described input end or output end voltage exceed the upper limit of the standard value of input voltage or output voltage; if exceed the upper limit of the standard value of input voltage or output voltage, send request protection action command to described control interface module.
Overvoltage protection OVP: detect voltage and/or the output end voltage of input end,
The input end of switch module is connected with external loading power supply,
The output terminal of switch module is connected with external loading.
Exceed certain threshold value when inputing or outputing voltage, overvoltage protection OVP will signal to control interface module, and control interface module is turn-offed by MOSFET described in field effect transistor FET control module and the control of field effect transistor FET driver module.
Described protection module comprises input end under-voltage protection VIN UVLO module; Described VIN UVLO module, for detection of the voltage of switch module input end, is prescribed a time limit lower than the lower of standard value of input voltage when described input terminal voltage, sends request protection action command to described control interface module.
Input end pin voltage under-voltage protection VIN UVLO: the input end pin VIN PIN of switch module is connecting the external loading power supply of switch module; when described input end pin VIN PIN voltage is during lower than certain thresholding; input end pin voltage under-voltage protection VIN UVLO will send a signal to control interface module, and control interface module is turn-offed by MOSFET described in field effect transistor FET control module and the control of field effect transistor FET driver module.
Described protection module comprises under-voltage protection VDD UVLO module; described VDD UVLO module is for detection of the voltage of the integrated circuit pin VDD being connected with external integrated power supply; when the value of the voltage of pin VDD is during lower than threshold value, send request protection action command to described control interface module.
Ic power under-voltage protection VDD UVLO: the operating voltage of integrated circuit is 12V, if when real work, the operating voltage of integrated circuit is not enough 12V, integrated circuit is with regard to cisco unity malfunction or break down.Therefore; need to monitor and carry out low-voltage protection the operating voltage of integrated circuit; practical solution is: the VDD pin of integrated circuit connects the power supply of integrated circuit; VDD pin voltage to integrated circuit detects; when VDD pin voltage is during lower than certain thresholding; ic power under-voltage protection VDD UVLO will send a signal to control interface module, and control interface module is turn-offed by MOSFET described in field effect transistor FET control module and the control of field effect transistor FET driver module.
Described switch control module comprises field effect transistor FET control module and field effect transistor FET driver module;
Field effect transistor FET control module comprises grid electrode drive module, grid under-voltage protection Gate UVLO module, starts under-voltage protection Boost UVLO module, soft-start module;
Described grid electrode drive module is for arranging the cut-in voltage of described switch module;
The opening time of described soft-start module for limiting described switch module;
Described grid under-voltage protection Gate UVLO module is for carrying out under-voltage protection to the grid voltage of described switch module;
Described startup under-voltage protection Boost UVLO module is for carrying out under-voltage protection to the pin VBST of integrated circuit;
Described field effect transistor FET driver module is used to described switch module to provide driving voltage to order about switch module work.
Field effect transistor FET control module major function has:
Soft start Soft Start: the general rear end of outside line of integrated current can connect the electric capacity of a lot of large capacitances, and in the time that MOSFET opens, can give capacitor charging, and now electric current is very large.The effect of soft start Soft Start circuit is the time lengthening that described MOSFET is opened, and by current limit within limits, avoids the excessive damaged line of electric current.The time that its outside pin SS PIN opens for described MOSFET is set.
Field effect transistor FET driver module major function: the driving voltage that need to meet MOSFET because of MOSFET unlatching must be greater than Vgs (th) voltage, the chip that the present embodiment utilizes is NMOSFET, so driving voltage need to be raised and equal Vout+Vbst voltage.
Described control interface module also comprises electrification reset POR module, and described POR module is for storage failure information, and described failure message comprises fault type.
Control interface module major function: the information that feeds back to control interface module by modules, and this information exchange is crossed to SMBUS signal send to outside host module, as: the current value size of crossing MOSFET by current sensor reading flow sends to external host module, informs the power consumption of current system.If generation protection action (overcurrent protection OCP or overvoltage protection OVP etc.), can store protection information into electrification reset POR module, after start next time, can read the information in electrification reset POR module, it is abnormal specifically to have there is which kind of in understanding.
Described host module is also for storing the address of each integrated circuit; Described host module is connected with the control interface module of each integrated circuit by PMBus bus; In the time receiving the failure message that integrated circuit sends, preserve this failure message corresponding with the address of corresponding integrated circuit;
Described integrated circuit (IC) inside also comprises temperature sensor, described temperature sensor detects the working temperature of the MOSFET of IC inside, temperature sensor is connected with control interface module, and temperature sensor is using described temperature value as electric signal transmission to control interface module.
The operating voltage of MOFET is 1.8V, and the operating voltage of integrated circuit is 12V, and V DD pin is connected with outside ic power, after the voltage that module 1.8VLDO is 1.8V by the voltage transitions of 12V, powers to MOSFET.
Digital control acquiescence monitors that SMBUS bus interface has three port: SMBUS_DATA, SMBUS_CLK, FAULTB, interconnected by three port realizations and host module and other bus interface.
Pin ROCP is the extraneous resistance pin of the overcurrent protection of integrated circuit, and for an external resistance, resistance value can be selected, and changes the inherent threshold value size of overcurrent protection by the selection of resistance value.
The pin EN/UVLO of integrated circuit is under-voltage protection enable pin, for controlling the function of whether opening under-voltage protection
Fig. 2 is the application's typical practical applications Organization Chart, is provided with integrated circuit (IC) (comprising Hot Swap1, Hot Swap2, Hot Swap3, Hot Swapn in Fig. 2) on Hot Swap circuit board.Between integrated circuit (IC) on each Hot Swap circuit board, be connected by PMBus bus.
CPU(in Fig. 2 comprises CPU1, CPU2, CPU3, the CPUs in Fig. 2) for load, be connected with the source S of the MOSFET of the integrated circuit (IC) on Hot Swap circuit board.Load power source is connected with the drain D of MOSFET.
POWER CONNECTOR in Fig. 2 is power supply, RAM be CPU with storer, do load and use.
Load can be also CD, the various electronic equipments such as floppy disk.
When one of them integrated circuit breaks down; such as occurring the overcurrent protection of some pins; overvoltage protection, or excess Temperature be need to turn-off time, and integrated circuit makes MOSFET be converted to shutoff by conducting state automatically; and report host module; host module has the address of each integrated circuit, and host module is recorded the integrated circuit breaking down, and is follow-up breakdown maintenance work; the node that searching is broken down, provides convenience.
The application realizes the Hot Swap function of current discrete element framework with the IC of a high integration, integrated level is high, and layout is easy.Distributed structure/architecture, can avoid the large current path of traditional Hot Swap structure too concentrated, and local overheating and the impact of a large amount of PCB via hole on PCB circuit board signal integrality, can reduce electromagnetic compatibility EMC simultaneously; Adopt distributed structure/architecture precisely to detect in real time load electricity consumption situation, individual node fault is unlikely to affect the normal work of whole system; Adopt PMBus bus, digitizing reporting system situation, can make the better equally loaded of system, improves product stability and simplifies maintenance task.
Claims (10)
1. a hot plug Hot Swap protection circuit system, is characterized in that, comprises multiple integrated circuit, host module; Wherein each described integrated circuit comprises respectively: protection module, switch module, gauge tap module, control interface module; Described control interface module is by bus and the interconnection of described host module;
The input end of described switch module is connected with the load power source of integrated circuit outside, and the output terminal of described switch module is connected with the load of integrated circuit outside;
Described protection module is for detecting in real time the parameter value of described switch module, testing result is transported to control interface module, also, for testing result is judged, if testing result exceeds the scope of standard value, send request protection action command to described control interface module;
Described control interface module is for receiving after the request protection action command of described protection module transmission, send protection action command to described gauge tap module, record trouble message, sends failure message, the address of wherein carrying the integrated circuit at place to host module;
Described gauge tap module is for controlling conducting and the shutoff of described switch module; When gauge tap module receives the protection action command of described control interface module, control the shutoff of input end and the output terminal of described switch module;
The address of described host module for storing the integrated circuit breaking down.
2. the system as claimed in claim 1, is characterized in that, described switch module is mos field effect transistor MOSFET; The source electrode of described MOSFET is connected with described load as the input end of switch module, and drain electrode is connected with described load power source as the output terminal of switch module.
3. the system as claimed in claim 1, is characterized in that, described protection module comprises current sensor, overcurrent protection OCP module;
Described current sensor, for detection of the current value of described switch module, is converted to electric signal by current value and sends described OCP module to;
The electric signal that described OCP module is used for forwarding described current sensor detection is to described control interface module; and judge whether described electric signal exceedes the standard value of electric current; if exceed the standard value of electric current, report request protection action command to described control interface module.
4. the system as claimed in claim 1; it is characterized in that; described protection module comprises overvoltage protection OVP module; described OVP module is for detection of input end or the output end voltage of described switch module; judge whether described input end or output end voltage exceed the upper limit of the standard value of input voltage or output voltage; if exceed the upper limit of the standard value of input voltage or output voltage, send request protection action command to described control interface module.
5. the system as claimed in claim 1, is characterized in that, described protection module comprises input end under-voltage protection VIN UVLO module; Described VIN UVLO module, for detection of the voltage of switch module input end, is prescribed a time limit lower than the lower of standard value of input voltage when described input terminal voltage, sends request protection action command to described control interface module.
6. the system as claimed in claim 1; it is characterized in that; described protection module comprises under-voltage protection VDD UVLO module; described VDD UVLO module is for detection of the voltage of the integrated circuit pin VDD being connected with external integrated power supply; when the value of the voltage of pin VDD is during lower than threshold value, send request protection action command to described control interface module.
7. system as claimed in claim 2, is characterized in that, described switch control module comprises field effect transistor FET control module and field effect transistor FET driver module; Described field effect transistor FET control module comprises grid electrode drive module, grid under-voltage protection Gate UVLO module, starts under-voltage protection Boost UVLO module, soft-start module;
Described grid electrode drive module is for arranging the cut-in voltage of described switch module;
The opening time of described soft-start module for limiting described switch module;
Described grid under-voltage protection Gate UVLO module is for carrying out under-voltage protection to the grid voltage of described switch module;
Described startup under-voltage protection Boost UVLO module is for carrying out under-voltage protection to the pin VBST of integrated circuit;
Described field effect transistor FET driver module is used to described switch module to provide driving voltage to order about switch module work.
8. the system as claimed in claim 1, is characterized in that, described control interface module comprises electrification reset POR module, and described POR module is for storage failure information, and described failure message comprises fault type.
9. the system as claimed in claim 1, is characterized in that, described host module is also for storing the address of each integrated circuit; Described host module is connected with the control interface module of each integrated circuit by PMBus bus; In the time receiving the failure message that integrated circuit sends, preserve this failure message corresponding with the address of corresponding integrated circuit.
10. the system as claimed in claim 1, is characterized in that, described IC interior also comprises temperature sensor, and described temperature sensor detects the working temperature of described switch module, using described temperature value as electric signal transmission to control interface module.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410044950.4A CN103777554B (en) | 2014-02-07 | 2014-02-07 | Hot swap protection circuit system |
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| CN201410044950.4A CN103777554B (en) | 2014-02-07 | 2014-02-07 | Hot swap protection circuit system |
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| CN103777554B CN103777554B (en) | 2017-01-25 |
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| CN104467395A (en) * | 2014-12-30 | 2015-03-25 | 浪潮电子信息产业股份有限公司 | Hot-plug power source system and power source control device and method |
| CN106199369A (en) * | 2016-08-31 | 2016-12-07 | 烽火通信科技股份有限公司 | A kind of method and system of OR ing MOSFET On-line Fault Detection |
| CN106326079A (en) * | 2016-08-19 | 2017-01-11 | 浪潮电子信息产业股份有限公司 | Method for diagnosing reasons of single-node power failure in RACK equipment cabinet |
| CN108227650A (en) * | 2017-12-20 | 2018-06-29 | 中核控制系统工程有限公司 | A kind of safety level DCS system module hot-plug method |
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| US6353523B1 (en) * | 1999-06-11 | 2002-03-05 | Actil Ltd | Hot-swap protection circuitry |
| CN201673497U (en) * | 2010-05-28 | 2010-12-15 | 深圳华北工控股份有限公司 | Hot plug protection device of computer peripherals |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467395A (en) * | 2014-12-30 | 2015-03-25 | 浪潮电子信息产业股份有限公司 | Hot-plug power source system and power source control device and method |
| CN106326079A (en) * | 2016-08-19 | 2017-01-11 | 浪潮电子信息产业股份有限公司 | Method for diagnosing reasons of single-node power failure in RACK equipment cabinet |
| CN106199369A (en) * | 2016-08-31 | 2016-12-07 | 烽火通信科技股份有限公司 | A kind of method and system of OR ing MOSFET On-line Fault Detection |
| CN106199369B (en) * | 2016-08-31 | 2018-10-09 | 烽火通信科技股份有限公司 | A kind of method and system of OR-ing MOSFET On-line Fault Detections |
| CN108227650A (en) * | 2017-12-20 | 2018-06-29 | 中核控制系统工程有限公司 | A kind of safety level DCS system module hot-plug method |
| CN108227650B (en) * | 2017-12-20 | 2020-05-22 | 中核控制系统工程有限公司 | Security-level DCS (distributed control system) module hot plug method |
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| CN103777554B (en) | 2017-01-25 |
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