CN103777378A - Method and device for improving work efficiency and bandwidth of lithium niobate high-speed optical modulator - Google Patents
Method and device for improving work efficiency and bandwidth of lithium niobate high-speed optical modulator Download PDFInfo
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- CN103777378A CN103777378A CN201410081444.2A CN201410081444A CN103777378A CN 103777378 A CN103777378 A CN 103777378A CN 201410081444 A CN201410081444 A CN 201410081444A CN 103777378 A CN103777378 A CN 103777378A
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- traveling wave
- lithium niobate
- optical modulator
- wave electrode
- speed optical
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- 230000003287 optical effect Effects 0.000 title claims abstract description 44
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 9
- 230000003993 interaction Effects 0.000 claims abstract description 34
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 5
- 230000009153 reflex inhibition Effects 0.000 claims description 19
- 230000011514 reflex Effects 0.000 claims description 11
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention disclose a lithium niobate high-speed optical modulator, comprising an optical waveguide and a traveling wave electrode, wherein the middle parts of the optical waveguide and the traveling wave electrode form into an interaction region with a coplanar waveguide structure; two ends of the traveling wave electrode outside the range of the interaction region are respectively formed to be an input region and an output region. The lithium niobate high-speed optical modulator is innovated in that the length of the traveling wave electrode between the interaction region and the output region is prolonged so as to form an electric reflection inhibiting region between the interaction region and the output region, and the structure parameter of the traveling wave electrode in the range of the electric reflection inhibiting region is the same with that of the traveling wave electrode in the range of the interaction region. The lithium niobate high-speed optical modulator has the advantages that, the negative effect of the electric reflection microwave signal can be effectively inhibited, the work efficiency and bandwidth of the lithium niobate high-speed optical modulator are improved, and the device performance is enhanced.
Description
Technical field
The present invention relates to a kind of high-speed optical modulator, relate in particular to a kind of method and device that improves lithium niobate high-speed optical modulator frequency of operation and bandwidth.
Background technology
At present, lithium niobate high-speed optical modulator (being also lithium niobate electrooptic modulator) is a kind of comparatively conventional optical modulation device in engineering field, current mainstream technology generally adopts coplanar waveguide structure (CPW, also be co-plane waveguide travelling wave electric pole structure) make lithium niobate high-speed optical modulator, its principle is as shown in Figure 1; Based on existing theory, in the time that the characteristic impedance of terminator and traveling wave electrode is different (impedance mismatching), will inspire galvanic reflex microwave signal (noise) in traveling wave electrode end (output area), and galvanic reflex microwave signal can reverse transfer to input field and with the signal formation resonance of radio frequency input, this declines the frequency of operation and the bandwidth that cause lithium niobate high-speed optical modulator, therefore, in theory, should make the characteristic impedance of terminator and traveling wave electrode identical; But in actual process, due to factors such as process allowances, the characteristic impedance of terminator and traveling wave electrode can not be in full accord, thereby cause galvanic reflex microwave signal to certainly exist.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of method that improves lithium niobate high-speed optical modulator frequency of operation and bandwidth, comprise lithium niobate high-speed optical modulator and terminator, in described lithium niobate high-speed optical modulator, be provided with connected in turn input field, interaction region and output area, between lithium niobate high-speed optical modulator and terminator, be connected by output area, its innovation is: a galvanic reflex inhibition zone is set between interaction region and output area, decay inhibiting effect can be played to the noise galvanic reflex signal being reflected back from terminator in galvanic reflex inhibition zone, thereby improve lithium niobate high-speed optical modulator frequency of operation and bandwidth.
Principle of the present invention is: due to technological reason, the impedance mismatching of terminator and traveling wave electrode is almost inevitable, and therefore, the present invention, from reducing the thinking of counter productive, considers how to suppress the negative effect of galvanic reflex microwave signal, based on existing electricity theory, we know, in the time that electric signal transmits in dielectric, the size of dielectric loss and dielectric being proportionate property of length, the length of the transmission path being formed by dielectric is larger, dielectric loss is also larger, therefore, inventor is provided with a galvanic reflex inhibition zone between interaction region and output area, the effect of galvanic reflex inhibition zone is the traveling wave electrode length extending between interaction region and output area, also extended the length of signal transmission path, thereby the dielectric loss between interaction region and output area is increased, in the time that transmitting in galvanic reflex inhibition zone, galvanic reflex microwave signal will significantly be decayed, thereby suppress galvanic reflex microwave noise signal and enter the negative effect that interaction region causes bandwidth of a device.
Based on aforementioned schemes, the invention allows for a kind of device that can specific implementation aforementioned schemes, i.e. a kind of lithium niobate high-speed optical modulator, comprising: optical waveguide and traveling wave electrode, the interaction region of optical waveguide middle part and traveling wave electrode middle part formation coplanar waveguide structure; Traveling wave electrode two ends beyond interaction region scope form respectively input field and output area, its innovation is: extend the traveling wave electrode length between interaction region and output area, thereby between interaction region and output area, form a galvanic reflex inhibition zone, the travelling wave electric pole structure parameter within the scope of galvanic reflex inhibition zone is identical with the traveling wave electrode within the scope of interaction region.This lithium niobate high-speed optical modulator can effectively suppress the counter productive of galvanic reflex microwave signal, improves frequency of operation and the bandwidth of device.
For fear of causing device size to increase because galvanic reflex inhibition zone is set, the invention allows for following preferred structure mode: the traveling wave electrode within the scope of galvanic reflex inhibition zone becomes U-shaped mode to distribute with the traveling wave electrode within the scope of interaction region, has living space thereby maximally utilise device.
Useful technique effect of the present invention is: can effectively suppress the counter productive of galvanic reflex microwave signal, improve frequency of operation and the bandwidth of lithium niobate high-speed optical modulator, improve device performance.
Accompanying drawing explanation
Fig. 1, existing lithium niobate high-speed optical modulator principle schematic;
Fig. 2, lithium niobate high-speed optical modulator principle schematic of the present invention;
In figure, the corresponding title of each mark is respectively: optical waveguide 1, traveling wave electrode 2, input optical fibre 3, output optical fibre 4, lithium niobate substrate 5, terminator 6, input field A, interaction region B, output area C.
Embodiment
A kind of lithium niobate high-speed optical modulator, comprising: optical waveguide 1 and traveling wave electrode 2, and optical waveguide 1 middle part and traveling wave electrode 2 middle parts form the interaction region B of coplanar waveguide structure; Traveling wave electrode 2 two ends beyond interaction region B scope form respectively input field A and output area C, its structure is: extend traveling wave electrode 2 length between interaction region B and output area C, thereby between interaction region B and output area C, form a galvanic reflex inhibition zone D, traveling wave electrode 2 structural parameters within the scope of the D of galvanic reflex inhibition zone are identical with the traveling wave electrode 2 within the scope of interaction region B.
Further, the traveling wave electrode 2 within the scope of the D of galvanic reflex inhibition zone distributes with the 2 one-tenth U-shaped modes of traveling wave electrode within the scope of interaction region B.
A kind of method that improves lithium niobate high-speed optical modulator frequency of operation and bandwidth, comprise lithium niobate high-speed optical modulator and terminator, in described lithium niobate high-speed optical modulator, be provided with in turn connected input field A, interaction region B and output area C, between lithium niobate high-speed optical modulator and terminator, be connected by output area C, its innovation is: a galvanic reflex inhibition zone D is set between interaction region B and output area C, galvanic reflex inhibition zone D can play decay inhibiting effect to the noise galvanic reflex signal being reflected back from terminator, thereby improve lithium niobate high-speed optical modulator frequency of operation and bandwidth.
Claims (3)
1. a lithium niobate high-speed optical modulator, comprising: optical waveguide (1) and traveling wave electrode (2), and optical waveguide (1) middle part and traveling wave electrode (2) middle part form the interaction region (B) of coplanar waveguide structure; Traveling wave electrode (2) two ends beyond interaction region (B) scope form respectively input field (A) and output area (C), it is characterized in that: extend traveling wave electrode (2) length between interaction region (B) and output area (C), thereby between interaction region (B) and output area (C), form a galvanic reflex inhibition zone (D), traveling wave electrode (2) structural parameters in the scope of galvanic reflex inhibition zone (D) are identical with the traveling wave electrode (2) in interaction region (B) scope.
2. lithium niobate high-speed optical modulator according to claim 1, is characterized in that: the traveling wave electrode (2) in the scope of galvanic reflex inhibition zone (D) becomes U-shaped mode to distribute with the traveling wave electrode (2) in interaction region (B) scope.
3. one kind is improved the method for lithium niobate high-speed optical modulator frequency of operation and bandwidth, comprise lithium niobate high-speed optical modulator and terminator, in described lithium niobate high-speed optical modulator, be provided with connected in turn input field (A), interaction region (B) and output area (C), between lithium niobate high-speed optical modulator and terminator, be connected by output area (C), it is characterized in that: a galvanic reflex inhibition zone (D) is set between interaction region (B) and output area (C), decay inhibiting effect can be played to the noise galvanic reflex signal being reflected back from terminator in galvanic reflex inhibition zone (D), thereby improve lithium niobate high-speed optical modulator frequency of operation and bandwidth.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410081444.2A CN103777378B (en) | 2014-03-07 | 2014-03-07 | Improve the method and device of Lithium metaniobate high-speed optical modulator operating frequency and bandwidth |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410081444.2A CN103777378B (en) | 2014-03-07 | 2014-03-07 | Improve the method and device of Lithium metaniobate high-speed optical modulator operating frequency and bandwidth |
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| CN103777378A true CN103777378A (en) | 2014-05-07 |
| CN103777378B CN103777378B (en) | 2017-03-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108681111A (en) * | 2018-03-29 | 2018-10-19 | 北京航天时代光电科技有限公司 | A kind of lithium niobate electrooptic modulator |
| WO2022222598A1 (en) * | 2021-04-23 | 2022-10-27 | 南京刻得不错光电科技有限公司 | Electro-optical modulator and electro-optical device |
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| US20050013522A1 (en) * | 2003-07-17 | 2005-01-20 | Masaharu Doi | Optical modulator with an impedance matching region |
| JP2007304424A (en) * | 2006-05-12 | 2007-11-22 | Anritsu Corp | Optical modulator |
| CN101501555A (en) * | 2006-06-14 | 2009-08-05 | 安立股份有限公司 | Optical modulator |
| US20090324158A1 (en) * | 2008-06-26 | 2009-12-31 | Fujitsu Limited | Optical modulation device and manufacturing method thereof |
| JP2011175305A (en) * | 2011-06-17 | 2011-09-08 | Anritsu Corp | Optical modulator module |
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2014
- 2014-03-07 CN CN201410081444.2A patent/CN103777378B/en active Active
Patent Citations (6)
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| CN1302388A (en) * | 1997-08-18 | 2001-07-04 | 皮雷利·卡维系统有限公司 | Narrow band optical modulator with reduced power requirement |
| US20050013522A1 (en) * | 2003-07-17 | 2005-01-20 | Masaharu Doi | Optical modulator with an impedance matching region |
| JP2007304424A (en) * | 2006-05-12 | 2007-11-22 | Anritsu Corp | Optical modulator |
| CN101501555A (en) * | 2006-06-14 | 2009-08-05 | 安立股份有限公司 | Optical modulator |
| US20090324158A1 (en) * | 2008-06-26 | 2009-12-31 | Fujitsu Limited | Optical modulation device and manufacturing method thereof |
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| 华勇等: "低半波电压高速铌酸锂光波导相位调制器研究", 《北京理工大学学报》 * |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108681111A (en) * | 2018-03-29 | 2018-10-19 | 北京航天时代光电科技有限公司 | A kind of lithium niobate electrooptic modulator |
| CN108681111B (en) * | 2018-03-29 | 2021-07-13 | 北京航天时代光电科技有限公司 | Lithium niobate electro-optical modulator |
| WO2022222598A1 (en) * | 2021-04-23 | 2022-10-27 | 南京刻得不错光电科技有限公司 | Electro-optical modulator and electro-optical device |
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| CN103777378B (en) | 2017-03-29 |
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Effective date of registration: 20231225 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Address before: 400060 No. 14 Yuanyuan Road, Nanan District, Chongqing Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.44 Research Institute |