CN103767689B - Wearable physiological parameter acquisition equipment - Google Patents
Wearable physiological parameter acquisition equipment Download PDFInfo
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- CN103767689B CN103767689B CN201410031260.5A CN201410031260A CN103767689B CN 103767689 B CN103767689 B CN 103767689B CN 201410031260 A CN201410031260 A CN 201410031260A CN 103767689 B CN103767689 B CN 103767689B
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Abstract
The invention discloses a kind of wearable physiological parameter acquisition equipment, the present invention includes power management module, physiological parameter acquisition module, Bluetooth wireless transmission module and processor module; Wherein power management module comprises 5V voltage conversion circuit and 3.3V voltage conversion circuit, and physiological parameter acquisition module comprises body temperature collecting unit, blood oxygen saturation and Pulse-Parameters collecting unit; Present device volume and quality little, it is convenient to carry, and mobility is strong, has good comfortableness; Anti-network interferences is strong, and network stable connection is reliable, and data transmission error correcting capability is strong; By wireless local area network technology, make equipment more flexible in networking, easy to use, monitoring information is reliable and stable, and the scope of application is wide, does not limit by time region; The multiple human body physiological parameter of Real-time Collection, is carried out to host by Bluetooth technology short range transmission alternately.
Description
Technical field
The invention belongs to wireless sensor network, Bluetooth technology, intelligent medical treatment, wearable device, embedded system technology field, be specifically related to a kind of wearable physiological parameter acquisition equipment that can be used in remote medical monitor.
Background technology
In order to alleviate the shortage of current medical resource, common people seek medical advice difficulty, physio-parameter detection multiplicity is high, the problem in many medical treatment & health fields such as medical and nursing work person works pressure is large, along with the rise of mobile Internet, cloud computing, large data technique, greatly promote the development of the wearable device industry that can be applicable to intelligent medical treatment.
Wearable physiological parameter acquisition equipment can real-time online human body physiological parameter, and as information such as blood oxygen saturation (SaO2), body temperature and pulses, equipment capacity of resisting disturbance is strong, mobility is strong, data transmission security is reliable.
Current China's wearable device market is still in the starting stage, wearable device that can be practical on market is few, traditional medical treatment detection device is expensive, hardware device poor stability, and small product size is huge, quality weight, mobility is weak, and actual operation data precision that is loaded down with trivial details, that gather is not high, and data can only show, cannot be interconnected with high in the clouds, do not reach the longer-term storage of data and the process feedback function of data.
Summary of the invention
Object of the present invention is exactly for the deficiencies in the prior art, provides a kind of wearable physiological parameter acquisition equipment.
For overcoming the above problems, present invention employs following technological means: a kind of wearable physiological parameter acquisition equipment, comprises power management module, physiological parameter acquisition module, Bluetooth wireless transmission module and processor module;
Described parameter acquisition module comprises blood oxygen saturation and Pulse-Parameters collecting unit, body temperature parameter acquisition unit, wherein, power management module comprise with AMS1117-5.0 be core 5V voltage conversion circuit and take AMS1117-3.3 as the 3.3V voltage conversion circuit of core, parameter acquisition module comprise with TSIC506 be core high-precision digital body temperature trans and with CY8C5966LTI processor be core blood oxygen saturation and Pulse-Parameters acquisition module, it is the Bluetooth wireless transmission unit of core that Bluetooth wireless transmission module mainly comprises with HC-05, processor module comprises the STM32F103RBT6 released with STMicw Electronics be core processor circuit and JTAG debugging interface, be wherein that the 5V voltage conversion circuit of core provides power supply for the voltage conversion circuit in the body temperature parameter acquisition unit in parameter acquisition module, blood oxygen saturation and Pulse-Parameters collecting unit, Bluetooth wireless transmission module, 3.3V voltage conversion circuit with AMS1117-5.0, be that the 3.3V voltage conversion circuit of core provides 3.3V voltage for processor device module, jtag interface with AMS1117-3.3, voltage conversion circuit in Bluetooth wireless transmission module is that the master chip HC-05 that the 3.3V voltage conversion circuit of core is Bluetooth wireless transmission module provides 3.3V power supply with RT9193-33, processor STM32F103RBT6 is by initializing body temperature collecting unit TSIC506 chip, the inner serial ports UART2 of initialization processor STM32F103RBT6, inner serial ports UART3, obtain body temperature signal, human body oxygen saturation signal and human pulse parameter signal, by initialize Bluetooth wireless transport module, select the bluetooth host equipment matched with it, the packet that processor is handled well by Bluetooth wireless transmission module short range transmission in host equipment, if do not find the bluetooth host equipment matched with it, processor will constantly update the packet information collected last time.
Power management module comprises: 7.4V lithium battery interface J1, self-lock switch K1, first diode D1, second diode D2, 3rd diode D3, first voltage conversion chip AMS1117-5.0, second voltage conversion chip AMS1117-3.3, first electrochemical capacitor C1, first tantalum electric capacity C2, second tantalum electric capacity C3, second electrochemical capacitor C4, 3rd electrochemical capacitor C5, 3rd tantalum electric capacity C6, 4th tantalum electric capacity C7, 4th electrochemical capacitor C8, 5th tantalum electric capacity C9, 5th electrochemical capacitor C10, first resistance R1, first power supply indicator DS1,
The minus earth of described 7.4V lithium battery interface J1, the positive pole of 7.4V lithium battery interface J1 connects 1 pin of self-lock switch K1, and 2 pins of self-lock switch K1 connect the anode of the first diode D1, and the negative electrode of the first diode D1 is as VCC7.4V voltage output end;
VCC7.4V voltage output end connects the positive pole of the first electrochemical capacitor C1, one end of the first tantalum electric capacity C2,3 pins of the first voltage conversion chip AMS1117-5.0, and the negative pole of the first electrochemical capacitor C1 connects the other end of the first tantalum electric capacity C2,1 pin of the first voltage conversion chip AMS1117-5.0, one end of the second tantalum electric capacity C3, the negative pole of the second electrochemical capacitor C4, the anode of the second diode D2, the negative pole of the 3rd electrochemical capacitor C5, one end of the 3rd tantalum electric capacity C6 to ground; 2 pins of the first voltage conversion chip AMS1117-5.0 connect the other end, the positive pole of the second electrochemical capacitor C4, the negative electrode of the second diode D2, the anode of the 3rd diode D3 of the second tantalum electric capacity C3, and the negative electrode of the 3rd diode D3 connects the positive pole of the 3rd electrochemical capacitor C5, the other end of the 3rd tantalum electric capacity C6 to the outfan of VCC5.0V voltage conversion circuit;
The outfan of VCC5.0V voltage conversion circuit connects 3 pins of the second voltage conversion chip AMS1117-3.3, one end of 4th tantalum electric capacity C7, the anode of the 4th electrochemical capacitor C8, the other end of the 4th tantalum electric capacity C7 connects the negative electrode of the 4th electrochemical capacitor C8, 1 pin of the second voltage conversion chip AMS1117-3.3, one end of 5th tantalum electric capacity C9, the negative electrode of the 5th electrochemical capacitor C10 is to ground, 2 pins of the second voltage conversion chip AMS1117-3.3 connect the other end of the 5th tantalum electric capacity C9, the anode of the 5th electrochemical capacitor C10 and one end of the first resistance R1 are to the voltage output end of VCC3.3V, the other end of the first resistance R1 connects the anode of the first power supply indicator DS1, the minus earth of the first power supply indicator DS1,
Described physiological parameter acquisition module comprises body temperature collecting unit, blood oxygen saturation and Pulse-Parameters collecting unit; Body temperature collecting unit adopts TSIC506 digital high accuracy body temperature trans to be connected with 24 pins of processor module, and digital independent adopts Tsic ZAC bus communication protocol, and power end is connected with 5.0V voltage conversion circuit.Universal asynchronous receiving-transmitting (Universal Asynchronous Receiver/Transmitter, UART) the interface UART3 of blood oxygen saturation and pulse collection unit YS2000 and processor module is connected, and power end is connected with 5.0V voltage conversion circuit.Described blood oxygen saturation and Pulse-Parameters collecting unit comprise CY8C5566L high speed processor unit, voltage conversion circuit and filter circuit of pressure-stabilizing, the UART3 of the signal connection handling device STM32F103RBT6 of output;
Blood oxygen saturation and Pulse-Parameters collecting unit circuit comprise: splicing ear P1, splicing ear P2, the 6th tantalum electric capacity C11;
The TX foot of splicing ear P2 connects a RX foot of splicing ear P1, the RX foot of splicing ear P2 connects the TX foot of splicing ear P1, the GND foot ground connection of splicing ear P2, the supply pin of splicing ear P2 connects the voltage output end of VCC5.0V, one end of the 6th tantalum electric capacity C11, the other end of the 6th tantalum electric capacity C11 connects GND, the PB10 pin of another RX foot connection handling device STM32F103RBT6 of splicing ear P1, the PB11 pin of another TX foot connection handling device STM32F103RBT6 of splicing ear P1;
Body temperature parameter acquisition unit comprises: splicing ear P3, the second resistance R2, the 7th tantalum electric capacity C12; 1 pin of the splicing ear P3 of body temperature parameter acquisition unit connects one end of the second resistance R2, one end of the 7th tantalum electric capacity C12, the other end of the 7th tantalum electric capacity C12 connects GND, the other end of the second resistance R2 connects the voltage output end of VCC5.0V, the PC4 pin of the 2 pin connection handling device STM32F103RBT6 of splicing ear P3,3 pins of splicing ear P3 connect GND; Splicing ear P3 adopts TSIC506;
The bluetooth core module that described Bluetooth wireless transmission module adopts positive point atom company to research and develop, comprise: bluetooth core module HC-05, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the 4th diode D4, the 5th diode D5, splicing ear P4, splicing ear P5, the second light emitting diode DS2, the 8th tantalum electric capacity C13, the 9th tantalum electric capacity C14, the 6th electrochemical capacitor C15, the tenth tantalum electric capacity C16, low pressure conversion chip RT9193-33;
1 foot of bluetooth core module HC-05 connects one end of the 7th resistance R7, the negative electrode of the 4th diode D4, 2 feet of bluetooth core module HC-05 connect one end of the 8th resistance R8, the anode of the 5th diode D5, the other end of the 7th resistance R7 connects the other end of the 8th resistance R8 to VCC3V3, the anode of the 4th diode D4 and a TX pin of splicing ear P4, the TX pin of splicing ear P5 is connected, the negative electrode of the 5th diode D5 and a RX pin of splicing ear P4, the RX pin connecting terminals P 5 is connected, 12 feet of bluetooth core module HC-05 connect VCC3V3, 13 feet of bluetooth core module HC-05 connect GND, 21 feet of bluetooth core module HC-05 connect 22 feet of bluetooth core module HC-05 to GND, 31 feet of bluetooth core module HC-05 connect one end of the 6th resistance R6, the other end of the 6th resistance R6 connects the anode of the second light emitting diode DS2, the negative electrode of the second light emitting diode DS2 is connected to GND, 32 feet of bluetooth core module HC-05 connect one end of the 5th resistance R5, the other end of the 5th resistance R5 is connected with the LED pin of splicing ear P5, 34 feet of bluetooth core module HC-05 connect one end of the 3rd resistance R3, one end of 4th resistance R4, the other end of the 3rd resistance R3 is connected with the KEY pin of splicing ear P5, the other end of the 4th resistance R4 connects GND,
The PA10 pin of another TX foot connection handling device STM32F103RBT6 of splicing ear P4, the PA9 pin of another RX foot connection handling device STM32F103RBT6 of splicing ear P4, the GND foot of splicing ear P5 connects one end of the 8th tantalum electric capacity C13, 2 feet of low pressure conversion chip RT9193-33 are to ground, the supply pin of splicing ear P5 connects the other end of the 8th tantalum electric capacity C13, 1 foot of low pressure conversion chip RT9193-33, 3 feet of low pressure conversion chip RT9193-33 are to VCC5.0V, 4 feet of low pressure conversion chip RT9193-33 connect one end of the 9th tantalum electric capacity C14, the other end of the 9th tantalum electric capacity C14 connects the negative electrode of the 6th electrochemical capacitor C15, one end of tenth tantalum electric capacity C16 is to GND, 5 feet of chip RT9193-33 connect the positive pole of the 6th electrochemical capacitor C15, the other end of the tenth tantalum electric capacity C16 is to VCC3V3,
Described processor module comprises the primary processor STM32F103RBT6 chip produced by ST Microelectronics, connector JTAG_20, 11 tantalum electric capacity C17, 12 tantalum electric capacity C18, 13 tantalum electric capacity C19, 14 tantalum electric capacity C20, 15 tantalum electric capacity C21, 16 tantalum electric capacity C22, 17 tantalum electric capacity C23, 18 tantalum electric capacity C24, 19 tantalum electric capacity C25, 20 tantalum electric capacity C26, 21 tantalum electric capacity C27, 9th resistance R9, tenth resistance R10, 11 resistance R11, 12 resistance R12, 13 resistance R13, 14 resistance R14, 15 resistance R15, first crystal oscillator Y1, second crystal oscillator Y2, second button K2, 3rd test display lamp DS3,
In processor module, the NRST pin of host processor chip STM32F103RBT6 connects one end of the 20 tantalum electric capacity C26, one end of tenth resistance R10, the supply pin of the second button K2, the other end of the 20 tantalum electric capacity C26 connects the GND foot of button K1 to ground, the other end of the tenth resistance R10 connects one end of the 9th resistance R9 to VCC3.3V, the other end of the 9th resistance R9 connects the anode of the 3rd test display lamp DS3, the PC12 foot of the negative electrode connection handling device STM32F103RBT6 of the 3rd test display lamp DS3, 13 feet of processor STM32F103RBT6 connect one end of the 11 tantalum electric capacity C17, 12 feet of the other end connection handling device STM32F103RBT6 of the 11 tantalum electric capacity C17 are to ground, 19 feet of processor STM32F103RBT6 connect one end of the 12 tantalum electric capacity C18, 18 feet of the other end connection handling device STM32F103RBT6 of the 12 tantalum electric capacity C18 are to ground, 32 feet of processor STM32F103RBT6 connect one end of the 13 tantalum electric capacity C19, 31 feet of the other end connection handling device STM32F103RBT6 of the 13 tantalum electric capacity C19 are to ground, 48 feet of processor STM32F103RBT6 connect one end of the 14 tantalum electric capacity C20, 47 feet of the other end connection handling device STM32F103RBT6 of the 14 tantalum electric capacity C20 are to ground, 64 feet of processor STM32F103RBT6 connect one end of the 15 tantalum electric capacity C21, 63 feet of the other end connection handling device STM32F103RBT6 of the 15 tantalum electric capacity C21 are to ground, 5 feet of processor STM32F103RBT6 connect one end of the first crystal oscillator Y1, one end of the 16 tantalum electric capacity C22,6 feet of processor STM32F103RBT6 connect the other end of the first crystal oscillator Y1, one end of the 17 tantalum electric capacity C23, and the other end of the 17 tantalum electric capacity C23 connects the other end of the 16 tantalum electric capacity C22 to ground, 3 feet of processor STM32F103RBT6 connect one end of the second crystal oscillator Y2, one end of the 18 tantalum electric capacity C24,4 feet of processor STM32F103RBT6 connect the other end of crystal oscillator Y2 and one end of the 19 tantalum electric capacity C25, and the other end of the 18 tantalum electric capacity C24 connects the other end of the 19 tantalum electric capacity C25 to ground,
56 pins of 3 pin connection handling device chip STM32F103RBT6 of the connector JTAG_20 in jtag interface circuit, one end of the 11 resistance R11, the other end of the 11 resistance R11 connects VCC3.3V voltage output end; 50 pins of 5 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 12 resistance R12, the other end of the 12 resistance R12 connects VCC3.3V voltage output end; 46 pins of 7 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 13 resistance R13, the other end of the 13 resistance R13 connects VCC3.3V voltage output end; 49 pins of 9 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 15 resistance R15, the other end of the 15 resistance R15 connects GND; 55 pins of 13 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 14 resistance R14, the other end of the 14 resistance R14 connects VCC3.3V voltage output end; 1 pin, 2 pins of connector JTAG_20 connect VCC3.3V voltage output end, 2 pins of connector JTAG_20 connect one end of the 21 tantalum electric capacity C27, and the other end of the 21 tantalum electric capacity C27 connects 4 pins of connector JTAG_20,6 pins, 8 pins, 10 pins, 12 pins, 14 pins, 16 pins, 18 pins, 20 pins to GND; Other pins of connector JTAG_20 are all built on stilts.
A resistance in parallel can be distinguished in described first crystal oscillator Y1 and the second crystal oscillator Y2 two ends.
The invention has the advantages that:
1 equipment volume and quality little, it is convenient to carry, and mobility is strong, has good comfortableness;
2 equipment costs are low, and relative to traditional physiological parameter acquisition equipment, equipment does not have expensive display screen but by intelligent mobile terminal display parameter information, device hardware departmental cost is cheap;
2 anti-network interferences are strong, and network stable connection is reliable, and data transmission error correcting capability is strong;
3 by wireless local area network technology, and make equipment more flexible in networking, easy to use, monitoring information is reliable and stable, and the scope of application is wide, does not limit by time region;
The multiple human body physiological parameter of 4 Real-time Collection, carries out alternately by Bluetooth technology short range transmission to host;
5 operations are low in energy consumption, and software and hardware system all adopts low power dissipation design, can work long hours, and battery durable ability is strong.
Accompanying drawing explanation
The 5.0V voltage conversion circuit schematic diagram that Fig. 1 (a) is power management module of the present invention;
Fig. 1 (b) is power management module 3.3V voltage conversion circuit schematic diagram of the present invention;
Fig. 2 is blood oxygen saturation of the present invention and pulse collection element circuit schematic diagram;
Fig. 3 is body temperature collecting unit circuit theory diagrams of the present invention;
Fig. 4 is Bluetooth wireless transmission modular circuit schematic diagram of the present invention;
Fig. 5 (a) is processor module master chip circuit theory diagrams of the present invention;
Fig. 5 (b) is processor module jtag interface circuit theory diagrams of the present invention.
Detailed description of the invention
A kind of wearable physiological parameter acquisition equipment, comprise power management module, parameter acquisition module, Bluetooth wireless transmission module and processor module, described parameter acquisition module comprises blood oxygen saturation and Pulse-Parameters collecting unit, body temperature parameter acquisition unit.
Below in conjunction with accompanying drawing, specific description is done to modules in the present invention:
As shown in Fig. 1 (a), power management module is 5.0V voltage conversion circuit, for body temperature collecting unit, blood oxygen saturation and Pulse-Parameters collecting unit, the 3.3V power-switching circuit of Bluetooth wireless transmission module provides power supply, 5.0V voltage conversion circuit comprises: 7.4V lithium battery, 5.0V voltage conversion circuit, 7.4V lithium battery interface J1, self-lock switch K1, first diode D1, second diode D2, 3rd diode D3, first electrochemical capacitor C1, first tantalum electric capacity C2, second tantalum electric capacity C3, second electrochemical capacitor C4, 3rd electrochemical capacitor C5, 3rd tantalum electric capacity C6, first voltage conversion chip AMS1117-5.0,
As shown in Fig. 1 (a): VCC5.0V voltage conversion circuit figure comprises the minus earth of 7.4V lithium battery interface J1, the positive pole of 7.4V lithium battery interface J1 connects first pin of self-lock switch K1,2 pins of self-lock switch K1 are connected with the anode of the first diode D1, and the negative electrode of the first diode D1 connects VCC7.4V voltage output end;
As shown in Fig. 1 (a): VCC7.4V voltage output end connects the positive pole of the first electrochemical capacitor C1, one end of first tantalum electric capacity C2, 3 pins of the first voltage conversion chip AMS1117-5.0, the negative pole of the first electrochemical capacitor C1 connects the other end of the first tantalum electric capacity C2, 1 pin of the first voltage conversion chip AMS1117-5.0, one end of second tantalum electric capacity C3, the negative pole of the second electrochemical capacitor C4, the anode of the second diode D2, the negative pole of the 3rd electrochemical capacitor C5, one end of 3rd tantalum electric capacity C6 is to ground, 2 pins of the first voltage conversion chip AMS1117-5.0 connect the other end of the second tantalum electric capacity C3, the positive pole of the second electrochemical capacitor C4, the negative electrode of the second diode D2, the anode of the 3rd diode D3, the negative electrode of the 3rd diode D3 connects the positive pole of the 3rd electrochemical capacitor C5, the other end of the 3rd tantalum electric capacity C6 is to the outfan of VCC5.0V voltage conversion circuit,
As shown in Fig. 1 (b): 3.3V voltage conversion circuit figure comprises the 4th tantalum electric capacity C7, the 4th electrochemical capacitor C8, the 5th tantalum electric capacity C9, the 5th electrochemical capacitor C10, the first resistance R1, the first power supply indicator DS1, the second voltage conversion chip AMS1117-3.3.
As shown in Fig. 1 (b): the outfan of VCC5.0V voltage conversion circuit connects 3 pins of the second voltage conversion chip AMS1117-3.3, one end of 4th tantalum electric capacity C7, the anode of the 4th electrochemical capacitor C8, the other end of the 4th tantalum electric capacity C7 connects the negative electrode of the 4th electrochemical capacitor C8, 1 pin of the second voltage conversion chip AMS1117-3.3, one end of 5th tantalum electric capacity C9, the negative electrode of the 5th electrochemical capacitor C10 is to ground, 2 pins of the second voltage conversion chip AMS1117-3.3 connect the other end of the 5th tantalum electric capacity C9, the anode of the 5th electrochemical capacitor C10 and one end of the first resistance R1 are to the voltage output end of VCC3.3V, the other end of the first resistance R1 connects the anode of the first power supply indicator DS1, the minus earth of the first power supply indicator DS1,
As shown in Figure 2, described blood oxygen saturation and Pulse-Parameters collecting unit adopt finger cot type photoelectric sensor mainly through the master chip CY8C596LTI processor of module, utilize finger as the transparent vessel of splendid attire hemoglobin, the HONGGUANG of use wavelength 660 nm and the near infrared light of 940 nm are as injecting light source, measure the light conductive strength by tissue bed, calculate hemoglobin concentration and blood oxygen saturation;
Blood oxygen saturation and Pulse-Parameters collecting unit circuit comprise: splicing ear P1, splicing ear P2, the 6th tantalum electric capacity C11;
1 foot of splicing ear P2 connects 3 feet of splicing ear P1,2 feet of splicing ear P2 connect 1 foot of splicing ear P1,3 feet of splicing ear P2 connect GND, 4 feet of splicing ear P2 connect the voltage output end of VCC5.0V, one end of the 6th tantalum electric capacity C11, the other end of the 6th tantalum electric capacity C11 connects GND, the PB10 pin of the 4 foot connection handling device STM32F103RBT6 of splicing ear P1, the PB11 pin of the 2 foot connection handling device STM32F103RBT6 of splicing ear P1;
As shown in Figure 3, body temperature collecting unit comprises by high-precision digital body temperature trans TSIC506, the second resistance R2 of the release of German ZMD company, the 7th tantalum electric capacity C12;
Body temperature collecting unit circuit as shown in Figure 3 comprises: splicing ear P3, the second resistance R2, the 7th tantalum electric capacity C12; 1 pin of splicing ear P3 connects one end of the second resistance R2, one end of the 7th tantalum electric capacity C12, the other end of the second resistance R2 connects the voltage output end of VCC5.0V, the PC4 pin of the 2 pin connection handling device STM32F103RBT6 of splicing ear P3,3 pins of splicing ear P3 connect GND;
As shown in Figure 4, Bluetooth wireless transmission module is researched and developed by positive point atom company, comprise: the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the 4th diode D4, the 5th diode D5, splicing ear P4, splicing ear P5, the second light emitting diode DS2, the 8th tantalum electric capacity C13, the 9th tantalum electric capacity C14, the 6th electrochemical capacitor C15, the tenth tantalum electric capacity C16, low pressure conversion chip RT9193-33;
1 foot of bluetooth core module HC-05 connects one end of the 7th resistance R7, the negative electrode of the 4th diode D4, 2 feet of bluetooth core module HC-05 connect one end of the 8th resistance R8, the anode of the 5th diode D5, the other end of the 7th resistance R7 connects the other end of the 8th resistance R8 to VCC3V3, the anode of the 4th diode D4 and 2 pins of splicing ear P4, 4 pins of splicing ear P5 are connected, the negative electrode of the 5th diode D5 and 4 pins of splicing ear P4, 3 pins connecting terminals P 5 are connected, 12 feet of bluetooth core module HC-05 connect VCC3V3, 13 feet of bluetooth core module HC-05 connect GND, 21 feet of bluetooth core module HC-05 connect 22 feet of bluetooth core module HC-05 to GND, 31 feet of bluetooth core module HC-05 connect one end of the 6th resistance R6, the other end of the 6th resistance R6 connects the anode of the second light emitting diode DS2, the negative electrode of light emitting diode DS2 is connected to GND, 32 feet of bluetooth core module HC-05 connect one end of the 5th resistance R5, the other end of the 5th resistance R5 is connected with 1 pin of splicing ear P5, 34 feet of bluetooth core module HC-05 connect one end of the 3rd resistance R3, one end of 3rd resistance R3, the other end of the 3rd resistance R3 is connected with 2 pins of splicing ear P5, the other end of the 4th resistance R4 connects GND,
The PA10 pin of the 1 foot connection handling device STM32F103RBT6 of splicing ear P4, the PA9 pin of the 3 foot connection handling device STM32F103RBT6 of splicing ear P4, 5 feet of splicing ear P5 connect one end of the 8th tantalum electric capacity C13, 2 feet of low pressure conversion chip RT9193-33 are to ground, 6 feet of splicing ear P5 connect the other end of the 8th tantalum electric capacity C13, 1 foot of low pressure conversion chip RT9193-33, 3 feet of chip RT9193-33 are to VCC5.0V, 4 feet of low pressure conversion chip RT9193-33 connect one end of the 9th tantalum electric capacity C14, the other end of the 9th tantalum electric capacity C14 connects the negative electrode of the 6th electrochemical capacitor C15, one end of tenth tantalum electric capacity C16 is to GND, 5 feet of low pressure conversion chip RT9193-33 connect the positive pole of the 6th electrochemical capacitor C15, the other end of the tenth tantalum electric capacity C16 is to VCC3V3,
As shown in Fig. 5 (a), processor module comprise produced by ST Microelectronics primary processor STM32F103RBT6 chip, connector JTAG_20, the 11 tantalum electric capacity C17, the 12 tantalum electric capacity C18, the 13 tantalum electric capacity C19, the 14 tantalum electric capacity C20, the 15 tantalum electric capacity C21, the 16 tantalum electric capacity C22, the 17 tantalum electric capacity C23, the 18 tantalum electric capacity C24, the 19 tantalum electric capacity C25, the 20 tantalum electric capacity C26, the 9th resistance R9, the tenth resistance R10, the first crystal oscillator Y1, the second crystal oscillator Y2, the second button K2, the 3rd test display lamp DS3;
The NRST pin of host processor chip STM32F103RBT6 connects one end of the 20 tantalum electric capacity C26, one end of tenth resistance R10, 3 feet of the second button K2, the other end of the 20 tantalum electric capacity C26 connects 1 foot of button K1 to ground, the other end of the tenth resistance R10 connects one end of the 9th resistance R9 to VCC3.3V, the other end of the 9th resistance R9 connects the anode of the 3rd test display lamp DS3, the PC12 foot of the negative electrode connection handling device STM32F103RBT6 of the 3rd test display lamp DS3, 13 feet of processor STM32F103RBT6 connect one end of the 11 tantalum electric capacity C17, 12 feet of the other end connection handling device STM32F103RBT6 of the 11 tantalum electric capacity C17 are to ground, 19 feet of processor STM32F103RBT6 connect one end of the 12 tantalum electric capacity C18, 18 feet of the other end connection handling device STM32F103RBT6 of the 12 tantalum electric capacity C18 are to ground, 32 feet of processor STM32F103RBT6 connect one end of the 13 tantalum electric capacity C19, 31 feet of the other end connection handling device STM32F103RBT6 of the 13 tantalum electric capacity C19 are to ground, 48 feet of processor STM32F103RBT6 connect one end of the 14 tantalum electric capacity C20, 47 feet of the other end connection handling device STM32F103RBT6 of the 14 tantalum electric capacity C20 are to ground, 64 feet of processor STM32F103RBT6 connect one end of the 15 tantalum electric capacity C21, 63 feet of the other end connection handling device STM32F103RBT6 of the 15 tantalum electric capacity C21 are to ground, 5 feet of processor STM32F103RBT6 connect one end of the first crystal oscillator Y1, one end of the 16 tantalum electric capacity C22,6 feet of processor STM32F103RBT6 connect the other end of the first crystal oscillator Y1, one end of the 17 tantalum electric capacity C23, and the other end of the 17 tantalum electric capacity C23 connects the other end of the 16 tantalum electric capacity C22 to ground, 3 feet of processor STM32F103RBT6 connect one end of the second crystal oscillator Y2, one end of the 18 tantalum electric capacity C24,4 feet of processor STM32F103RBT6 connect the other end of crystal oscillator Y2 and one end of the 19 tantalum electric capacity C25, and the other end of the 18 tantalum electric capacity C24 connects the other end of the 19 tantalum electric capacity C25 to ground,
A resistance in parallel can be distinguished in described first crystal oscillator Y1 and the second crystal oscillator Y2 two ends.
As shown in Fig. 5 (b), jtag interface circuit diagram comprises the 11 resistance R11, the 12 resistance R12, the 13 resistance R13, the 14 resistance R14, the 15 resistance R15, the 21 tantalum electric capacity C27, JTAG_20 connector;
56 pins of 3 pin connection handling device chip STM32F103RBT6 of the connector JTAG_20 in jtag interface circuit, one end of the 11 resistance R11, the other end of the 11 resistance R11 connects VCC3.3V voltage output end; 50 pins of 5 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 12 resistance R12, the other end of the 12 resistance R12 connects VCC3.3V voltage output end; 46 pins of 7 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 13 resistance R13, the other end of the 13 resistance R13 connects VCC3.3V voltage output end; 49 pins of 9 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 15 resistance R15, the other end of the 15 resistance R15 connects GND; 55 pins of 13 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 14 resistance R14, the other end of the 14 resistance R14 connects VCC3.3V voltage output end; 1 pin, 2 pins of connector JTAG_20 connect VCC3.3V voltage output end, 2 pins of connector JTAG_20 connect one end of the 21 tantalum electric capacity C27, the other end of the 21 tantalum electric capacity C27 connects 4 pins of connector JTAG_20,6 pins, 8 pins, 10 pins, 12 pins, 14 pins, 16 pins, 18 pins, 20 pins to GND, and other pins of connector JTAG_20 are all built on stilts.
The work process of wearable physiological parameter acquisition equipment is as follows: processor module is by the body temperature collecting unit TSIC506 in initiation parameter acquisition module, blood oxygen saturation and Pulse-Parameters collecting unit, the physiological parameter information of Real-time Collection user personnel, after treated device is processed into packet, processor will start Bluetooth wireless transmission module, user finds the bluetooth host equipment that matches with it and uploads physiological parameter information, smart machine can extract by installing specific software the information that internal Bluetooth radio transmission apparatus receives, and be stored in intelligent mobile host equipment, the physiological parameter information that the user that Intelligent mobile equipment meeting Automatically invoked has stored uploads, consult for user according to specific form display, meanwhile, user can select the physiological parameter information uploaded to be uploaded to farther medical monitoring center by intelligent terminal, consults for medical personnel.
Claims (2)
1. wearable physiological parameter acquisition equipment, comprises power management module, physiological parameter acquisition module, Bluetooth wireless transmission module and processor module;
Described physiological parameter acquisition module comprises blood oxygen saturation and Pulse-Parameters collecting unit, body temperature parameter acquisition unit, wherein, power management module comprise with AMS1117-5.0 be core 5V voltage conversion circuit and take AMS1117-3.3 as the 3.3V voltage conversion circuit of core, parameter acquisition module comprise with TSIC506 be core high-precision digital body temperature trans and with CY8C5966LTI processor be core blood oxygen saturation and Pulse-Parameters acquisition module, it is the Bluetooth wireless transmission unit of core that Bluetooth wireless transmission module mainly comprises with HC-05, processor module comprises the STM32F103RBT6 released with STMicw Electronics be core processor circuit and JTAG debugging interface, be wherein that the 5V voltage conversion circuit of core provides power supply for the voltage conversion circuit in the body temperature parameter acquisition unit in parameter acquisition module, blood oxygen saturation and Pulse-Parameters collecting unit, Bluetooth wireless transmission module, 3.3V voltage conversion circuit with AMS1117-5.0, be that the 3.3V voltage conversion circuit of core provides 3.3V voltage for processor device module, jtag interface with AMS1117-3.3, voltage conversion circuit in Bluetooth wireless transmission module is that the master chip HC-05 that the 3.3V voltage conversion circuit of core is Bluetooth wireless transmission module provides 3.3V power supply with RT9193-33, processor STM32F103RBT6 is by initializing body temperature collecting unit TSIC506 chip, the inner serial ports UART2 of initialization processor STM32F103RBT6, inner serial ports UART3, obtain body temperature signal, human body oxygen saturation signal and human pulse parameter signal, by initialize Bluetooth wireless transport module, select the bluetooth host equipment matched with it, the packet that processor is handled well by Bluetooth wireless transmission module short range transmission in host equipment, if do not find the bluetooth host equipment matched with it, processor will constantly update the packet information collected last time,
It is characterized in that: described power management module comprises 7.4V lithium battery interface J1, self-lock switch K1, first diode D1, second diode D2, 3rd diode D3, first voltage conversion chip AMS1117-5.0, second voltage conversion chip AMS1117-3.3, first electrochemical capacitor C1, first tantalum electric capacity C2, second tantalum electric capacity C3, second electrochemical capacitor C4, 3rd electrochemical capacitor C5, 3rd tantalum electric capacity C6, 4th tantalum electric capacity C7, 4th electrochemical capacitor C8, 5th tantalum electric capacity C9, 5th electrochemical capacitor C10, first resistance R1, first power supply indicator DS1,
The minus earth of described 7.4V lithium battery interface J1, the positive pole of 7.4V lithium battery interface J1 connects 1 pin of self-lock switch K1, and 2 pins of self-lock switch K1 connect the anode of the first diode D1, and the negative electrode of the first diode D1 is as VCC7.4V voltage output end;
VCC7.4V voltage output end connects the positive pole of the first electrochemical capacitor C1, one end of the first tantalum electric capacity C2,3 pins of the first voltage conversion chip AMS1117-5.0, and the negative pole of the first electrochemical capacitor C1 connects the other end of the first tantalum electric capacity C2,1 pin of the first voltage conversion chip AMS1117-5.0, one end of the second tantalum electric capacity C3, the negative pole of the second electrochemical capacitor C4, the anode of the second diode D2, the negative pole of the 3rd electrochemical capacitor C5, one end of the 3rd tantalum electric capacity C6 to ground; 2 pins of the first voltage conversion chip AMS1117-5.0 connect the other end, the positive pole of the second electrochemical capacitor C4, the negative electrode of the second diode D2, the anode of the 3rd diode D3 of the second tantalum electric capacity C3, and the negative electrode of the 3rd diode D3 connects the positive pole of the 3rd electrochemical capacitor C5, the other end of the 3rd tantalum electric capacity C6 to the outfan of VCC5.0V voltage conversion circuit;
The outfan of VCC5.0V voltage conversion circuit connects 3 pins of the second voltage conversion chip AMS1117-3.3, one end of 4th tantalum electric capacity C7, the anode of the 4th electrochemical capacitor C8, the other end of the 4th tantalum electric capacity C7 connects the negative electrode of the 4th electrochemical capacitor C8, 1 pin of the second voltage conversion chip AMS1117-3.3, one end of 5th tantalum electric capacity C9, the negative electrode of the 5th electrochemical capacitor C10 is to ground, 2 pins of the second voltage conversion chip AMS1117-3.3 connect the other end of the 5th tantalum electric capacity C9, the anode of the 5th electrochemical capacitor C10 and one end of the first resistance R1 are to the voltage output end of VCC3.3V, the other end of the first resistance R1 connects the anode of the first power supply indicator DS1, the minus earth of the first power supply indicator DS1,
Described physiological parameter acquisition module comprises body temperature collecting unit, blood oxygen saturation and Pulse-Parameters collecting unit; Body temperature collecting unit adopts TSIC506 digital high accuracy body temperature trans to be connected with 24 pins of processor module, and digital independent adopts Tsic ZAC bus communication protocol, and power end is connected with 5.0V voltage conversion circuit; Blood oxygen saturation is connected with the universal asynchronous receiving-transmitting interface UART3 of processor module with pulse collection unit YS2000, and power end is connected with 5.0V voltage conversion circuit; Described blood oxygen saturation and Pulse-Parameters collecting unit comprise CY8C5566L high speed processor unit, voltage conversion circuit and filter circuit of pressure-stabilizing, the UART3 of the signal connection handling device STM32F103RBT6 of output;
Blood oxygen saturation and Pulse-Parameters collecting unit circuit comprise: splicing ear P1, splicing ear P2, the 6th tantalum electric capacity C11;
The TX foot of splicing ear P2 connects a RX foot of splicing ear P1, the RX foot of splicing ear P2 connects the TX foot of splicing ear P1, the GND foot ground connection of splicing ear P2, the supply pin of splicing ear P2 connects the voltage output end of VCC5.0V, one end of the 6th tantalum electric capacity C11, the other end of the 6th tantalum electric capacity C11 connects GND, the PB10 pin of another RX foot connection handling device STM32F103RBT6 of splicing ear P1, the PB11 pin of another TX foot connection handling device STM32F103RBT6 of splicing ear P1;
Body temperature parameter acquisition unit comprises: splicing ear P3, the second resistance R2, the 7th tantalum electric capacity C12; 1 pin of the splicing ear P3 of body temperature parameter acquisition unit connects one end of the second resistance R2, one end of the 7th tantalum electric capacity C12, the other end of the 7th tantalum electric capacity C12 connects GND, the other end of the second resistance R2 connects the voltage output end of VCC5.0V, the PC4 pin of the 2 pin connection handling device STM32F103RBT6 of splicing ear P3,3 pins of splicing ear P3 connect GND; Splicing ear P3 adopts TSIC506;
The bluetooth core module that described Bluetooth wireless transmission module adopts positive point atom company to research and develop, comprise: bluetooth core module HC-05, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the 4th diode D4, the 5th diode D5, splicing ear P4, splicing ear P5, the second light emitting diode DS2, the 8th tantalum electric capacity C13, the 9th tantalum electric capacity C14, the 6th electrochemical capacitor C15, the tenth tantalum electric capacity C16, low pressure conversion chip RT9193-33;
1 foot of bluetooth core module HC-05 connects one end of the 7th resistance R7, the negative electrode of the 4th diode D4, 2 feet of bluetooth core module HC-05 connect one end of the 8th resistance R8, the anode of the 5th diode D5, the other end of the 7th resistance R7 connects the other end of the 8th resistance R8 to VCC3V3, the anode of the 4th diode D4 and a TX pin of splicing ear P4, the TX pin of splicing ear P5 is connected, the negative electrode of the 5th diode D5 and a RX pin of splicing ear P4, the RX pin connecting terminals P 5 is connected, 12 feet of bluetooth core module HC-05 connect VCC3V3, 13 feet of bluetooth core module HC-05 connect GND, 21 feet of bluetooth core module HC-05 connect 22 feet of bluetooth core module HC-05 to GND, 31 feet of bluetooth core module HC-05 connect one end of the 6th resistance R6, the other end of the 6th resistance R6 connects the anode of the second light emitting diode DS2, the negative electrode of the second light emitting diode DS2 is connected to GND, 32 feet of bluetooth core module HC-05 connect one end of the 5th resistance R5, the other end of the 5th resistance R5 is connected with the LED pin of splicing ear P5, 34 feet of bluetooth core module HC-05 connect one end of the 3rd resistance R3, one end of 4th resistance R4, the other end of the 3rd resistance R3 is connected with the KEY pin of splicing ear P5, the other end of the 4th resistance R4 connects GND,
The PA10 pin of another TX foot connection handling device STM32F103RBT6 of splicing ear P4, the PA9 pin of another RX foot connection handling device STM32F103RBT6 of splicing ear P4, the GND foot of splicing ear P5 connects one end of the 8th tantalum electric capacity C13, 2 feet of low pressure conversion chip RT9193-33 are to ground, the supply pin of splicing ear P5 connects the other end of the 8th tantalum electric capacity C13, 1 foot of low pressure conversion chip RT9193-33, 3 feet of low pressure conversion chip RT9193-33 are to VCC5.0V, 4 feet of low pressure conversion chip RT9193-33 connect one end of the 9th tantalum electric capacity C14, the other end of the 9th tantalum electric capacity C14 connects the negative electrode of the 6th electrochemical capacitor C15, one end of tenth tantalum electric capacity C16 is to GND, 5 feet of chip RT9193-33 connect the positive pole of the 6th electrochemical capacitor C15, the other end of the tenth tantalum electric capacity C16 is to VCC3V3,
Described processor module comprises the primary processor STM32F103RBT6 chip produced by ST Microelectronics, connector JTAG_20, 11 tantalum electric capacity C17, 12 tantalum electric capacity C18, 13 tantalum electric capacity C19, 14 tantalum electric capacity C20, 15 tantalum electric capacity C21, 16 tantalum electric capacity C22, 17 tantalum electric capacity C23, 18 tantalum electric capacity C24, 19 tantalum electric capacity C25, 20 tantalum electric capacity C26, 21 tantalum electric capacity C27, 9th resistance R9, tenth resistance R10, 11 resistance R11, 12 resistance R12, 13 resistance R13, 14 resistance R14, 15 resistance R15, first crystal oscillator Y1, second crystal oscillator Y2, second button K2, 3rd test display lamp DS3,
In processor module, the NRST pin of host processor chip STM32F103RBT6 connects one end of the 20 tantalum electric capacity C26, one end of tenth resistance R10, the supply pin of the second button K2, the other end of the 20 tantalum electric capacity C26 connects the GND foot of button K1 to ground, the other end of the tenth resistance R10 connects one end of the 9th resistance R9 to VCC3.3V, the other end of the 9th resistance R9 connects the anode of the 3rd test display lamp DS3, the PC12 foot of the negative electrode connection handling device STM32F103RBT6 of the 3rd test display lamp DS3, 13 feet of processor STM32F103RBT6 connect one end of the 11 tantalum electric capacity C17, 12 feet of the other end connection handling device STM32F103RBT6 of the 11 tantalum electric capacity C17 are to ground, 19 feet of processor STM32F103RBT6 connect one end of the 12 tantalum electric capacity C18, 18 feet of the other end connection handling device STM32F103RBT6 of the 12 tantalum electric capacity C18 are to ground, 32 feet of processor STM32F103RBT6 connect one end of the 13 tantalum electric capacity C19, 31 feet of the other end connection handling device STM32F103RBT6 of the 13 tantalum electric capacity C19 are to ground, 48 feet of processor STM32F103RBT6 connect one end of the 14 tantalum electric capacity C20, 47 feet of the other end connection handling device STM32F103RBT6 of the 14 tantalum electric capacity C20 are to ground, 64 feet of processor STM32F103RBT6 connect one end of the 15 tantalum electric capacity C21, 63 feet of the other end connection handling device STM32F103RBT6 of the 15 tantalum electric capacity C21 are to ground, 5 feet of processor STM32F103RBT6 connect one end of the first crystal oscillator Y1, one end of the 16 tantalum electric capacity C22,6 feet of processor STM32F103RBT6 connect the other end of the first crystal oscillator Y1, one end of the 17 tantalum electric capacity C23, and the other end of the 17 tantalum electric capacity C23 connects the other end of the 16 tantalum electric capacity C22 to ground, 3 feet of processor STM32F103RBT6 connect one end of the second crystal oscillator Y2, one end of the 18 tantalum electric capacity C24,4 feet of processor STM32F103RBT6 connect the other end of crystal oscillator Y2 and one end of the 19 tantalum electric capacity C25, and the other end of the 18 tantalum electric capacity C24 connects the other end of the 19 tantalum electric capacity C25 to ground,
56 pins of 3 pin connection handling device chip STM32F103RBT6 of the connector JTAG_20 in jtag interface circuit, one end of the 11 resistance R11, the other end of the 11 resistance R11 connects VCC3.3V voltage output end; 50 pins of 5 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 12 resistance R12, the other end of the 12 resistance R12 connects VCC3.3V voltage output end; 46 pins of 7 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 13 resistance R13, the other end of the 13 resistance R13 connects VCC3.3V voltage output end; 49 pins of 9 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 15 resistance R15, the other end of the 15 resistance R15 connects GND; 55 pins of 13 pin connection handling device chip STM32F103RBT6 of connector JTAG_20, one end of the 14 resistance R14, the other end of the 14 resistance R14 connects VCC3.3V voltage output end; 1 pin, 2 pins of connector JTAG_20 connect VCC3.3V voltage output end, 2 pins of connector JTAG_20 connect one end of the 21 tantalum electric capacity C27, and the other end of the 21 tantalum electric capacity C27 connects 4 pins of connector JTAG_20,6 pins, 8 pins, 10 pins, 12 pins, 14 pins, 16 pins, 18 pins, 20 pins to GND; Other pins of connector JTAG_20 are all built on stilts.
2. wearable physiological parameter acquisition equipment according to claim 1, is characterized in that: described first crystal oscillator Y1 and the second crystal oscillator Y2 two ends are a resistance in parallel respectively.
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