CN103762311A - Ferroelectric memory - Google Patents
Ferroelectric memory Download PDFInfo
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- CN103762311A CN103762311A CN201410038707.1A CN201410038707A CN103762311A CN 103762311 A CN103762311 A CN 103762311A CN 201410038707 A CN201410038707 A CN 201410038707A CN 103762311 A CN103762311 A CN 103762311A
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- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 15
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 claims description 15
- -1 aldehyde radical Chemical group 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 12
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 9
- 125000004185 ester group Chemical group 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000000468 ketone group Chemical group 0.000 claims description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- 125000002769 thiazolinyl group Chemical group 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 125000001047 cyclobutenyl group Chemical group C1(=CCC1)* 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical group [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Chemical group 0.000 claims description 3
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 125000003944 tolyl group Chemical group 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PMTRSEDNJGMXLN-UHFFFAOYSA-N titanium zirconium Chemical compound [Ti].[Zr] PMTRSEDNJGMXLN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses a ferroelectric thin-film capacitor of a ferroelectric memory. The ferroelectric thin-film capacitor comprises a substrate layer 1, an upper electrode layer 2, an upper electrode buffer layer 3, a ferroelectric thin-film layer 4, a lower electrode buffer layer 5, a lower electrode layer 6, a bonding layer 7 and a barrier layer 8, wherein multi-substituent silicon heterocyclic diallyl is doped into a lead-zirconium-titanium thin-film layer to form the ferroelectric thin-film layer 4.
Description
Technical field
The present invention relates to the ferroelectric capacitor for ferroelectric memory, belong to ferroelectric thin-film technology field.
Background technology
The nonvolatile memory of based semiconductor is useful in data storages with aspect the substitute of rotating disk memory.Found that memory based on flash memory EEPROM unit is used in computer and consumer devices for example in camera, Mp 3 player and PDA more and more.The cost of flash memory eeprom memory has been reduced to sort memory and just in computer, has been used as the degree of the substitute of disc driver.Because semiconductor disk driver needs significantly lower power, shockproof and typically faster than the conventional disc driver utilizing in laptop computer system, so semiconductor disk driver is attractive especially to laptop computer.
Ferroelectric memory is a kind of non-volatile memory of special process, and it adopts artificial synthetic plumbous zirconium titanium PZT material to form memory crystalline solid.Ferroelectric memory still can continue save data after power down, and writing speed is fast and have the unlimited life-span that writes, and is not easy to write bad.Therefore,, with the more early stage Nonvolatile memory technology comparison such as flash memory and EEPROM, ferroelectric memory has higher writing speed and longer reading-writing life-span.
PZT ferroelectric capacitor, as the main storage medium of ferroelectric memory, has larger fatigue rate and poor leakage current characteristic, because the ferroelectric thin film crystal property of preparing on Pt metal is poor, makes the poor performance of PZT ferroelectric capacitor, and leakage current is large.Meanwhile, current ferroelectric memory also has a lot of shortcomings.The problems such as the cost of memory is according to very high, and reading-writing life-span is permanent not, easy damage.
Summary of the invention
The present invention mixes organic material in plumbous zirconium titanium (PZT) material, makes ferroelectric film have following superperformance: be combined well with electrode, crystal property is good, leakage current is little, material of excellent fatigue characteristics, and read or write speed is fast, increase the life-span of ferroelectric memory, and make ferroelectric memory be not easy to damage.
A ferroelectric capacitor for ferroelectric memory, silicon substrate layer 1, it also comprises upper electrode layer 2, top electrode resilient coating 3, ferroelectric thin film layer 4, bottom electrode resilient coating 5, lower electrode layer 6, tack coat 7 and barrier layer 8.
Wherein the silacyclohexadiene of multi-substituent is doped in plumbous zirconium ti thin film layer, forms ferroelectric thin film layer 4, as the silacyclohexadiene of multi-substituent.
Multiple substituent silacyclohexadiene:
In formula (1), R1, R2 are identical or different, represent alkyl or aryl; R3 represents hydrogen, aldehyde radical, ketone group, ester group, phosphate; R4 represents alkyl, aryl; R5 represents hydrogen, alkyl, thiazolinyl, aryl; R6 represents alkyl, aryl.The straight or branched alkyl of the above-mentioned preferred C1-C6 of alkyl, as methyl, ethyl, propyl group, isopropyl, butyl, isobutyl group, amyl group, hexyl etc.
The preferred phenyl of above-mentioned aryl and substituted-phenyl, described substituted benzene such as tolyl, p-methoxyphenyl etc.Above-mentioned ketone group preferably-COR, wherein R represent methylidene, ethyl, propyl group, phenyl etc.Above-mentioned ester group preferably-COOR ', wherein R ' represent methylidene, ethyl, propyl group, phenyl etc.The alkenyl of the preferred C2-C8 of above-mentioned thiazolinyl, such as: vinyl, propenyl, cyclobutenyl, pentenyl etc.
Preferred polysubstituted silacyclohexadiene of the present invention is selected from following compounds Ia～If:
Ia：R1＝R2＝Me，R3＝COOMe，R4＝Ph，R5＝H，R6＝Ph；
Ib：R1＝R2＝Ph，R3＝COOMe，R4＝Ph，R5＝H，R6＝Ph；
Ic：R1＝R2＝Me，R3＝COPh，R4＝Ph，R5＝H，R6＝Ph；
Id:R1=R2=Me, R3=COOMe, R4=Ph, R5=(1-propyl group)-1-pentenyl, R6=Ph;
Ie：R1＝R2＝Me，R3＝COOMe，R4＝Bu，R5＝Et，R6＝Bu；
If：R1＝R2＝Ph，R3＝COOMe，R4＝Bu，R5＝Et，R6＝Bu。
Accompanying drawing explanation
Fig. 1 is the structural representation of the ferroelectric capacitor of ferroelectric memory of the present invention.
Embodiment
In order to make the clearer understanding of those skilled in the art technical scheme of the present invention, below in conjunction with accompanying drawing, its embodiment is described.
The ferroelectric capacitor of ferroelectric memory, silicon substrate layer 1, it also comprises upper electrode layer 2, top electrode resilient coating 3, ferroelectric thin film layer 4, bottom electrode resilient coating 5, lower electrode layer 6, tack coat 7 and barrier layer 8.
The present invention mixes organic material in plumbous zirconium titanium (PZT) material, the profile of the ferroelectric capacitor structure that the illustrated structure of invention is general ferroelectric memory.
The silacyclohexadiene of multi-substituent is doped in plumbous zirconium ti thin film layer, forms ferroelectric thin film layer 4, as the silacyclohexadiene of multi-substituent.
Multiple substituent silacyclohexadiene:
In formula (1), R1, R2 are identical or different, represent alkyl or aryl; R3 represents hydrogen, aldehyde radical, ketone group, ester group, phosphate; R4 represents alkyl, aryl; R5 represents hydrogen, alkyl, thiazolinyl, aryl; R6 represents alkyl, aryl.The straight or branched alkyl of the above-mentioned preferred C1-C6 of alkyl, as methyl, ethyl, propyl group, isopropyl, butyl, isobutyl group, amyl group, hexyl etc.The preferred phenyl of above-mentioned aryl and substituted-phenyl, described substituted benzene such as tolyl, p-methoxyphenyl etc.Above-mentioned ketone group preferably-COR, wherein R represent methylidene, ethyl, propyl group, phenyl etc.Above-mentioned ester group preferably-COOR ', wherein R ' represent methylidene, ethyl, propyl group, phenyl etc.The alkenyl of the preferred C2-C8 of above-mentioned thiazolinyl, such as: vinyl, propenyl, cyclobutenyl, pentenyl etc.
Preferred polysubstituted silacyclohexadiene of the present invention is selected from following compounds Ia～If:
Ia：R1＝R2＝Me，R3＝COOMe，R4＝Ph，R5＝H，R6＝Ph；
Ib：R1＝R2＝Ph，R3＝COOMe，R4＝Ph，R5＝H，R6＝Ph；
Ic：R1＝R2＝Me，R3＝COPh，R4＝Ph，R5＝H，R6＝Ph；
Id:R1=R2=Me, R3=COOMe, R4=Ph, R5=(1-propyl group)-1-pentenyl, R6=Ph;
Ie：R1＝R2＝Me，R3＝COOMe，R4＝Bu，R5＝Et，R6＝Bu；
If：R1＝R2＝Ph，R3＝COOMe，R4＝Bu，R5＝Et，R6＝Bu。
Below, describe embodiments of the invention in detail, but the present invention is not limited thereto.
According to diagrammatic cross section structure, ferroelectric memory electric capacity is set, basalis 1 is set, together with upper electrode layer 2, top electrode resilient coating 3, ferroelectric thin film layer 4, bottom electrode resilient coating 5, lower electrode layer 6, tack coat 7 and barrier layer 8 are bonded and fixed in turn according to order from top to bottom, barrier layer 8 is bonded and fixed in silicon substrate layer 1.
Wherein polysubstituted silacyclohexadiene, is used this area common technology means to be doped in plumbous zirconium ti thin film layer, the thin layer that formation thickness is 290nm to 300nm.
Certainly; the present invention also can have other various embodiments; in the situation that not deviating from spirit of the present invention and essence thereof; those of ordinary skill in the art are when making according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (2)
1. a ferroelectric capacitor for ferroelectric memory, comprising:
Basalis 1, upper electrode layer 2, top electrode resilient coating 3, ferroelectric thin film layer 4, bottom electrode resilient coating 5, lower electrode layer 6, tack coat 7 and barrier layer 8.
Wherein the silacyclohexadiene of multi-substituent is doped in plumbous zirconium ti thin film layer, forms ferroelectric thin film layer 4, multiple substituent silacyclohexadiene:
In formula (1), R1, R2 are identical or different, represent alkyl or aryl; R3 represents hydrogen, aldehyde radical, ketone group, ester group, phosphate; R4 represents alkyl, aryl; R5 represents hydrogen, alkyl, thiazolinyl, aryl; R6 represents alkyl, aryl.The straight or branched alkyl of the above-mentioned preferred C1-C6 of alkyl, as methyl, ethyl, propyl group, isopropyl, butyl, isobutyl group, amyl group, hexyl etc.
2. ferroelectric capacitor as claimed in claim 1, is characterized in that, the preferred phenyl of above-mentioned aryl and substituted-phenyl, described substituted benzene such as tolyl, p-methoxyphenyl etc.Above-mentioned ketone group preferably-COR, wherein R represent methylidene, ethyl, propyl group, phenyl etc.Above-mentioned ester group preferably-COOR ', wherein R ' represent methylidene, ethyl, propyl group, phenyl etc.The alkenyl of the preferred C2-C8 of above-mentioned thiazolinyl, such as: vinyl, propenyl, cyclobutenyl, pentenyl etc.
Preferred polysubstituted silacyclohexadiene of the present invention is selected from following compounds Ia～If:
Ia：R1＝R2＝Me，R3＝COOMe，R4＝Ph，R5＝H，R6＝Ph；
Ib：R1＝R2＝Ph，R3＝COOMe，R4＝Ph，R5＝H，R6＝Ph；
Ic：R1＝R2＝Me，R3＝COPh，R4＝Ph，R5＝H，R6＝Ph；
Id:R1=R2=Me, R3=COOMe, R4=Ph, R5=(1-propyl group)-1-pentenyl, R6=Ph;
Ie：R1＝R2＝Me，R3＝COOMe，R4＝Bu，R5＝Et，R6＝Bu；
If：R1＝R2＝Ph，R3＝COOMe，R4＝Bu，R5＝Et，R6＝Bu。
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| CN201410038707.1A CN103762311B (en) | 2014-01-26 | 2014-01-26 | A kind of ferroelectric memory |
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| CN201410038707.1A CN103762311B (en) | 2014-01-26 | 2014-01-26 | A kind of ferroelectric memory |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097010A (en) * | 2014-05-16 | 2015-11-25 | 华为技术有限公司 | Ferroelectric memory |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004020682A2 (en) * | 2002-08-31 | 2004-03-11 | Cranfield University | Improvements to oxide films |
| CN101284845A (en) * | 2007-04-10 | 2008-10-15 | 北京大学 | Polysubstituted silacyclohexadiene and synthetic method thereof |
| CN102790091A (en) * | 2009-10-20 | 2012-11-21 | 中芯国际集成电路制造(上海)有限公司 | Green transistor, nanometer silicon FeRAM and driving method thereof |
| CN102964123A (en) * | 2012-12-12 | 2013-03-13 | 中国科学院上海硅酸盐研究所 | Samarium-oxide-doped modified lead zirconate titanate ferroelectric ceramic and preparation method thereof |
| CN103360062A (en) * | 2012-03-30 | 2013-10-23 | 三菱综合材料株式会社 | Ferroelectric thin film-forming sol-gel solution and ferroelectric thin film forming method |
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- 2014-01-26 CN CN201410038707.1A patent/CN103762311B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004020682A2 (en) * | 2002-08-31 | 2004-03-11 | Cranfield University | Improvements to oxide films |
| CN101284845A (en) * | 2007-04-10 | 2008-10-15 | 北京大学 | Polysubstituted silacyclohexadiene and synthetic method thereof |
| CN102790091A (en) * | 2009-10-20 | 2012-11-21 | 中芯国际集成电路制造(上海)有限公司 | Green transistor, nanometer silicon FeRAM and driving method thereof |
| CN103360062A (en) * | 2012-03-30 | 2013-10-23 | 三菱综合材料株式会社 | Ferroelectric thin film-forming sol-gel solution and ferroelectric thin film forming method |
| CN102964123A (en) * | 2012-12-12 | 2013-03-13 | 中国科学院上海硅酸盐研究所 | Samarium-oxide-doped modified lead zirconate titanate ferroelectric ceramic and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097010A (en) * | 2014-05-16 | 2015-11-25 | 华为技术有限公司 | Ferroelectric memory |
| CN105097010B (en) * | 2014-05-16 | 2018-03-16 | 华为技术有限公司 | A kind of ferroelectric memory |
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