CN103762212B - It is applied to the integrated circuit package of switch type regulator - Google Patents
It is applied to the integrated circuit package of switch type regulator Download PDFInfo
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- CN103762212B CN103762212B CN201410033517.0A CN201410033517A CN103762212B CN 103762212 B CN103762212 B CN 103762212B CN 201410033517 A CN201410033517 A CN 201410033517A CN 103762212 B CN103762212 B CN 103762212B
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 150000001875 compounds Chemical class 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 15
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 240000004282 Grewia occidentalis Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 230000002093 peripheral Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
Disclose a kind of integrated circuit package being applied to switch type regulator, including: lead frame, there is multiple pin and the first substrate；First and second power device chips, have first and the 3rd electrode respectively, have the second electrode overleaf in front；Control chip, front has the first and second drive electrodes and multiple input and output electrode；Wherein, the first electrode of the first power device chip is electrically connected in the first substrate by conductive projection, and the second electrode of the second power device chip is attached in the first substrate and is formed with the first substrate electrically connect；3rd electrode of the first power device chip and the 3rd electrode of the second power device chip are electrically connected respectively to the first drive electrode and the second drive electrode；Second electrode of the first power device chip and the first electrode of the second power device chip are electrically connected respectively to the pin of lead frame.This integrated circuit package can reduce dead resistance and the power consumption that bonding line introduces, and utilizes large-area substrate to improve heat radiation.
Description
Technical field
The present invention relates to semiconductor package, relate more specifically to be applied to switch type regulator
Integrated circuit package.
Background technology
Switch type regulator, such as DC-DC converter, be used for carrying to various electricity systems
For stable voltage source.In low power-supply device, (such as laptop computer, mobile phone etc.), battery management is especially
Need high efficiency DC-DC converter.Switch type regulator is converted into height input direct voltage
Voltage to frequency, is then filtered high-frequency output voltage and then is converted into VD.Open
A part for pass type actuator can be integrated in a package assembling.
The increase of demand along with miniaturization, lightweight and the multifunction of electronic component, it is desirable to
In the integrated circuit package be applied to switch type regulator, integrated more element, reduces envelope simultaneously
Dress size.In addition to IC chip, it is applied to the integrated circuit package of switch type regulator
Traditional discrete component, such as inductance and power device can also be comprised.So can subtract as far as possible
The use of few peripheral cell.In this package assembling, joining of IC chip and discrete component
Put and attaching method thereof size and performance on package assembling and there is vital impact.
Fig. 1 shows the circuit diagram of typical switch type regulator 10.This switch type regulator
Including controlled stage and power stage.Controlled stage includes control chip U1.Power stage includes power device
Q1 and Q2.Power device for example, field-effect transistor or bipolar transistor.Power device
Q1 and Q2 is connected between input voltage vin and ground GND, and its intermediate node is as outfan
Lx.The input and output electrode of control chip U1 is connected to input and output electrode IOs, its drive electrode
It is connected to the respective gate electrode of power device Q1 and Q2, is used for controlling power device Q1 and Q2
Conducting and disconnection, thus produce output voltage.
It is N-type mos field effect transistor at power device Q1 and Q2
(N-MOSFET), when, the drain electrode of high-pressure side power device Q1 is connected to input electricity
Pressure Vin, the source electrode of low side power device Q2 is connected to the ground GND.Power device Q1's
Source electrode is connected with the drain electrode of power device Q2, as outfan Lx.
It is P-type mos field-effect transistor at power device Q1 and Q2
(P-MOSFET), when, the source electrode of high-pressure side power device Q1 is connected to input electricity
Pressure Vin, the drain electrode of low side power device Q2 is connected to the ground GND.Power device Q1's
Drain electrode is connected with the source electrode of power device Q2, as outfan Lx.
The control chip U1 and power device Q1 and Q2 of switch type regulator 10 can be sealed
It is contained in an encapsulating compound, forms integrated circuit package.
In the integrated circuit package being applied to switch type regulator of prior art, power device Q1
Face up with Q2 and be arranged on lead frame, then utilize bonding line by power device Q1's and Q2
A respective electrode is connected on public pin LX.The use of bonding line introduces additional posting
Raw resistance, causes energy loss, and is unfavorable for the heat radiation of power device Q1 and Q2.
Therefore, it is desirable to reduce the power consumption of the integrated circuit package being applied to switch type regulator further
And improve its heat radiation.
Summary of the invention
In view of this, it is an object of the invention to provide and a kind of be applied to the integrated of switch type regulator
Circuit unit, to solve due to the use of bonding line, its performance to be caused unfavorable shadow in prior art
The problem rung.
According to the present invention, it is provided that a kind of integrated circuit package being applied to switch type regulator, including:
Lead frame, it has multiple pin and the first substrate；First power device chip, its front has
First electrode and the 3rd electrode, the back side has the second electrode；Second power device chip, its front
Having the first electrode and the 3rd electrode, the back side has the second electrode；Control chip, its front has
First drive electrode and the second drive electrode and multiple input and output electrode；Wherein, described first
First electrode of power device chip is electrically connected in described first substrate by conductive projection, described
Second electrode of the second power device chip be attached in described first substrate and with described first substrate
Forming electrical connection, described first substrate is as switch pin；Described first drive electrode is electrically connected to
3rd electrode of described first power device chip, and described second drive electrode is electrically connected to
3rd electrode of two power device chips；Second electrode of the first power device chip and described second
First electrode of power device chip is electrically connected respectively to each pin of described lead frame.
Preferably, in described integrated circuit package, the plurality of pin includes the first pin,
Described first drive electrode is electrically connected to described first pin, and, described first power device core
3rd electrode of sheet is electrically connected to described first pin by conductive projection.
Preferably, in described integrated circuit package, described first drive electrode passes through bonding line
It is electrically connected to described first pin.
Preferably, in described integrated circuit package, the plurality of pin includes the second pin,
Described integrated circuit package also includes encapsulating compound, inside described encapsulating compound, and described first pin
Electrically connecting described second pin, described first drive electrode is electrically connected to institute via described second pin
State the first pin.
Preferably, in described integrated circuit package, the plurality of pin includes the second pin,
Described integrated circuit package also includes encapsulating compound, outside described encapsulating compound, and described first pin
Electrically connecting described second pin, described first drive electrode is electrically connected to institute via described second pin
State the first pin.
Preferably, in described integrated circuit package, the second of described first power device chip
Electrode is electrically connected to an input voltage pin of described lead frame by aluminium strip or copper folder, described
First electrode of the second power device chip is connect by bonding line be electrically connected to described lead frame one
Ground pin.
Preferably, in described integrated circuit package, described 3rd electrode is gate electrode, described
First electrode is source electrode, and described second electrode is drain electrode.
Preferably, in described integrated circuit package, described 3rd electrode is gate electrode, described
First electrode is drain electrode, and described second electrode is source electrode.
Preferably, in described integrated circuit package, described lead frame also includes the second substrate,
The back side of described control chip is attached in described second substrate by insulating barrier, the first of its front
Drive electrode, the second drive electrode and multiple input and output electrode are electrically connected respectively by one group of bonding line
Receive the gate electrode of described first power device chip, the gate electrode of described second power device chip
Each pin with described lead frame.
Preferably, in described integrated circuit package, the back side of described control chip is by insulation
Layer is attached to the front of described second power device chip, and exposes described second power device core
At least some of and described 3rd electrode of described first electrode of sheet at least some of.
Preferably, in described integrated circuit package, described control chip is inverted in described lead-in wire
On frame.
Preferably, described integrated circuit package also includes encapsulating compound, described encapsulating compound Coverage Control
Chip, the first power device chip, the second power device chip and lead frame.
In application according to the present invention in the integrated circuit package of switch type regulator, the first power
First electrode of device chip is electrically connected in the first substrate by conductive projection, the second power device
Second electrode of chip is attached in the first substrate and is formed with the first substrate electrically connect.First substrate
As switch pin.Owing to the connection between power device chip and switch pin need not use key
Zygonema, therefore reduces dead resistance, and correspondingly reduces power consumption.At integrated circuit package
In the range of size allows, the area of the first substrate can be the biggest.First power device chip
Source electrode and the drain electrode of the second power device chip and the bump contact of substrate be conducive to heat consumption
Dissipate.
Accompanying drawing explanation
By description to the embodiment of the present invention referring to the drawings, the present invention above-mentioned and other
Objects, features and advantages will be apparent from, in the accompanying drawings:
Fig. 1 shows the circuit diagram of typical switch type regulator；
Fig. 2 illustrates the integrated electricity being applied to switch type regulator according to the first embodiment of the present invention
The schematic diagram of road assembly；
Fig. 3 illustrates the integrated electricity being applied to switch type regulator according to the second embodiment of the present invention
The schematic diagram of road assembly；And
Fig. 4 illustrates the integrated electricity being applied to switch type regulator according to the third embodiment of the invention
The schematic diagram of road assembly.
Detailed description of the invention
It is more fully described various embodiments of the present invention hereinafter with reference to accompanying drawing.In various figures,
Identical element uses same or similar reference to represent.
For the sake of clarity, the various piece in accompanying drawing is not necessarily to scale.For brevity,
The modular construction that can obtain after several steps described in the width figure.Furthermore, it is also possible to save
Slightly details known to some, such as, the most not shown solder, in some drawings
The not shown backing material for supporting wire frame and/or external frame.
Should be appreciated that when describing modular construction, when by one layer, a region is referred to as being positioned at another
When layer, another region " above " or " top ", can refer to be located immediately at another floor, another district
Above territory, or itself and another layer, also comprise other layer or region between another region.
Further, if device is overturn, this layer, region will be located in another layer, another region " under
Face " or " lower section ".If being located immediately at another layer, another region above scenario to describe,
Herein will use " directly exist ... above " or " ... adjoin above and therewith " form of presentation.
Describe hereinafter the knot of the many specific details, such as integrated circuit package of the present invention
Structure, material, size, process technique and technology, in order to be more clearly understood that the disclosure.But as
Those skilled in the art it will be appreciated that as, can not realize according to these specific details
The disclosure.
Fig. 2 illustrates the integrated electricity being applied to switch type regulator according to the first embodiment of the present invention
The schematic diagram of road assembly 100.In this integrated circuit package 100, two power devices
Chip and a control chip 140 are arranged on lead frame 110.It should be noted that, this integrated circuit
Assembly 100 can include more transistor and/or integrated circuit.
Lead frame 110 include the pin for external connection, for inside connect pin and
For supporting the substrate of chip.Pin and the switch type regulator shown in Fig. 1 for external connection
The input and output electrode of 10 is corresponding, including input and output pin IOs, input voltage pin Vin
With grounding pin GND.The pin connected for inside includes gate lead GATE1, in encapsulation
Material interiorly or exteriorly extends, for being electrically connected to each other by the device within integrated circuit package 100.
Substrate SUB is used for support and control chip 140.
In this embodiment, the drain electrode of high-pressure side power device chip 120 is placed upward.At height
The upper surface of pressure side power device chip 120, drain electrode presss from both sides 151 and input via aluminium strip or copper
Voltage pin Vin is connected.In the lower surface of high-pressure side power device chip 120, high-pressure side merit
The source electrode of rate device chip 120 is connected to substrate LX via conductive projection 121, and substrate LX is also
As switch pin.Additionally, in the lower surface of high-pressure side power device chip 120, high-pressure side merit
The gate electrode of rate device chip 120 is connected to gate lead GATE1 via conductive projection 122, enters
And gate lead GATE1 is connected to a driving electricity of control chip 140 via bonding line 152
Pole.
The drain electrode of low side power device chip 130 is placed down.At low side power device core
The upper surface of sheet 130, the source electrode of low side power device chip 130 is via bonding line 152 even
Being connected to grounding pin, gate electrode is connected to another of control chip 140 via bonding line 152 and drives
Moving electrode.At the lower surface of low side power device chip 130, drain electrode such as utilizes conduction viscous
Connect agent to be bonded on substrate LX.
Control chip 140 faces up placement.Further, the bottom of control chip 140 utilizes absolutely
Edge bonding agent is attached on substrate SUB.The input and output electrode of control chip 140 is via bonding line
152 are connected with input and output pin IOs.One drive electrode of control chip 140 is via key
Zygonema 152 electrically connects with a drive electrode pin (not shown).Then, this drive electrode draws
Foot is connected with gate lead GATE1 so that a drive electrode of control chip 140 is with high
The gate electrode of pressure side power device chip 120 is connected.Another of control chip 140 drives electricity
Pole directly electrically connects with the gate electrode of low side power device chip 130 via bonding line 152.
Encapsulating compound 160 covers high-pressure side power device chip 120, low side power device chip 130
With control chip 140.The end of the external pin of lead frame 110 and/or bottom are from encapsulating compound 160
In expose, be used for providing being electrically connected of integrated circuit package 100 and external circuit (such as circuit board)
Connect.The substrate of lead frame 110 is exposed from the bottom of encapsulating compound 160.The inside of lead frame 110 is drawn
Foot is positioned at the inside of encapsulating compound 160.Alternatively, the inside pin of lead frame 110 can also be from envelope
Charging 160 is exposed.At described encapsulating compound interiorly or exteriorly, a driving of lead frame 110
Electrode pin is connected with gate lead GATE1 so that a driving electricity of control chip 140
Pole is electrically connected to gate lead GATE1 via drive electrode pin.
In the first embodiment, the high-pressure side power device chip 120 of integrated circuit package 100
Source electrode is attached on public substrate LX with the drain electrode of low side power device chip 130.
LX is as switch pin in this substrate.Due to the connection between power device chip and switch pin not
Need to use bonding line, therefore reduce dead resistance, and correspondingly reduce power consumption.In group
In the range of part size allows, the area of substrate LX can be the biggest.High-pressure side power device
The source electrode of chip 120 and the drain electrode of low side power device chip 130 are big with substrate LX's
Contact area is conducive to heat dissipation.
Fig. 3 illustrates the integrated electricity being applied to switch type regulator according to the second embodiment of the present invention
The schematic diagram of road assembly 200.In this integrated circuit package 200, two power devices
Chip and a control chip 140 are arranged on lead frame 110.It should be noted that, this integrated circuit
Assembly 200 can include more transistor and/or integrated circuit.
It is that control chip 140 is stacked on low pressure after second embodiment is different from first embodiment
On side power device chip 130.Control chip 140 faces up placement.Further, core is controlled
The bottom of sheet 140 utilizes insulating adhesive to be attached to the side table of low side power device chip 130
On face.This side surface arranges gate electrode and source electrode, and control chip 140 exposes grid electricity
At least some of and the source electrode of pole at least some of, is used for electrically connecting.Thus, lead frame 110
Substrate SUB can be saved.
Other parts of integrated circuit package 200 according to the second embodiment with according to first embodiment
Integrated circuit package 100 identical.
In a second embodiment, it is stacked on low side power device chip 130 due to control chip 140
On, therefore can reduce the area occupied of integrated circuit package further.
Fig. 4 illustrates the integrated electricity being applied to switch type regulator according to the third embodiment of the invention
The schematic diagram of road assembly 300.In this integrated circuit package 300, two power devices
Chip and a control chip 140 are arranged on lead frame 110.It should be noted that, this integrated circuit
Assembly 300 can include more transistor and/or integrated circuit.
It is that control chip 140 is flip-chip mounted after 3rd embodiment is different from first embodiment
On lead frame 110.Further, semiconductor chip 140 includes internal circuit and internal circuit
The respective conductive projection 141 of electrical connection.Control chip 140 placed face down.Further,
The conductive projection 141 of control chip 140 is formed welding flux interconnected with the respective pins of lead frame 110.
Specifically, the input and output electrode of control chip 140 and the input and output pin IOs of lead frame 110
Formed welding flux interconnected.In the inside of encapsulating compound 160, gate lead GATE1 extends to control
Below coremaking sheet 140.One drive electrode of control chip 140 and gate lead GATE1 shape
Become welding flux interconnected, thus be connected with the gate electrode of high-pressure side power device chip 120.Lead frame
110 include gate lead GATE2 added.Another drive electrode of control chip 140 and grid
Pole pin GATE2 is formed welding flux interconnected, and then via bonding line 152 and low side power device
The gate electrode electrical connection of chip 130.
Other parts of integrated circuit package 300 according to the 3rd embodiment with according to first embodiment
Integrated circuit package 100 identical.
In the third embodiment, owing to control chip 140 is flip-chip mounted on lead frame 110, because of
This can reduce the use of bonding line further, thus reduces dead resistance, and correspondingly subtracts
Little power consumption.
At the above-mentioned first to the 3rd embodiment, high-pressure side power device 120 and low side power device
Part 130 is N-type device, such as N-MOSFET.The front of this N-MOSFET has source
Electrode and gate electrode, the back side has drain electrode.
In alternate embodiments, high-pressure side power device 120 and low side power device 130 can
To be P-type device, such as P-MOSFET.The front of this P-MOSFET have drain electrode and
Gate electrode, the back side has source electrode.
In this alternative embodiment, the source electrode of high-pressure side power device chip 120 is connected to defeated
Entering voltage pin Vin, the drain electrode of low side power device chip Q2 is connected to grounding pin GND.
At the lower surface of high-pressure side power device chip 120, drain electrode is connected to via conductive projection 121
Substrate LX.At the lower surface of low side power device chip 130, drain electrode such as utilizes conduction
Bonding agent is bonded on substrate LX.Substrate LX is also as switch pin.
It should be noted that, in this article, the relational terms of such as first and second or the like is only
It is used for separating an entity or operation with another entity or operating space, and not necessarily requires
Or imply relation or the order that there is any this reality between these entities or operation.And,
Term " includes ", " comprising " or its any other variant are intended to comprising of nonexcludability,
So that include that the process of a series of key element, method, article or equipment not only include that those are wanted
Element, but also include other key elements being not expressly set out, or also include for this process,
The key element that method, article or equipment are intrinsic.In the case of there is no more restriction, by statement
The key element that " including one ... " limits, it is not excluded that include the process of described key element, method,
Article or equipment there is also other identical element.
According to embodiments of the invention as described above, these embodiments do not have detailed descriptionthe own
Details, be also not intended to the specific embodiment that this invention is only described.Obviously, as described above,
Can make many modifications and variations.These embodiments are chosen and specifically described to this specification, be in order to
Preferably explain the principle of the present invention and actual application, so that skilled artisan's energy
The present invention and amendment on the basis of the present invention is utilized to use well.The present invention is only wanted by right
Ask the restriction of book and four corner thereof and equivalent.
Claims (12)
1. it is applied to an integrated circuit package for switch type regulator, including:
Lead frame, it has multiple pin and the first substrate；
First power device chip, its front has the first electrode and the 3rd electrode, and the back side has
Two electrodes；
Second power device chip, its front has the first electrode and the 3rd electrode, and the back side has
Two electrodes；
Control chip, its front has the first drive electrode and the second drive electrode and multiple input
Output electrode；
Wherein, the first electrode of described first power device chip is electrically connected to institute by conductive projection
Stating in the first substrate, the second electrode of described second power device chip is attached to described first substrate
Above and with described first substrate being formed and electrically connect, described first substrate is as switch pin；
Described first drive electrode is electrically connected to the 3rd electrode of described first power device chip, with
And described second drive electrode is electrically connected to the 3rd electrode of the second power device chip；
Second electrode of described first power device chip and the of described second power device chip
One electrode is electrically connected respectively to each pin of described lead frame,
Wherein, the plurality of pin includes the first pin, the 3rd of described first power device chip
Electrode is electrically connected to described first pin by conductive projection.
Integrated circuit package the most according to claim 1, wherein, described first drives electricity
Pole is electrically connected to described first pin.
Integrated circuit package the most according to claim 2, wherein, described first drives electricity
Pole is electrically connected to described first pin by bonding line.
Integrated circuit package the most according to claim 2, wherein, the plurality of pin bag
Including the second pin, described integrated circuit package also includes encapsulating compound, inside described encapsulating compound, and institute
Stating the first pin and electrically connect described second pin, described first drive electrode is via described second pin
It is electrically connected to described first pin.
Integrated circuit package the most according to claim 2, wherein, the plurality of pin bag
Including the second pin, described integrated circuit package also includes encapsulating compound, outside described encapsulating compound, and institute
Stating the first pin and electrically connect described second pin, described first drive electrode is via described second pin
It is electrically connected to described first pin.
Integrated circuit package the most according to any one of claim 1 to 5, wherein said
Second electrode of the first power device chip is electrically connected to described lead frame by aluminium strip or copper folder
One input voltage pin, the first electrode of described second power device chip is electrically connected by bonding line
Receive a grounding pin of described lead frame.
Integrated circuit package the most according to claim 6, described 3rd electrode is gate electrode,
Described first electrode is source electrode, and described second electrode is drain electrode.
Integrated circuit package the most according to claim 6, described 3rd electrode is gate electrode,
Described first electrode is drain electrode, and described second electrode is source electrode.
Integrated circuit package the most according to any one of claim 1 to 5, wherein said
Lead frame also includes the second substrate, and the back side of described control chip is attached to described by insulating barrier
In two substrates, first drive electrode in its front, the second drive electrode and multiple input and output electrode
By one group of bonding line be electrically connected respectively to the gate electrode of described first power device chip, described
The gate electrode of two power device chips and each pin of described lead frame.
Integrated circuit package the most according to any one of claim 1 to 5, described control
The back side of chip is attached to the front of described second power device chip by insulating barrier, and exposes
At least some of and described 3rd electrode of described first electrode of described second power device chip
At least partially.
11. integrated circuit packages according to any one of claim 1 to 5, described control
Flip-chip is on described lead frame.
12. integrated circuit packages according to claim 1, also include encapsulating compound, described envelope
Charging Coverage Control chip, the first power device chip, the second power device chip and lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033517.0A CN103762212B (en) | 2014-01-24 | It is applied to the integrated circuit package of switch type regulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033517.0A CN103762212B (en) | 2014-01-24 | It is applied to the integrated circuit package of switch type regulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103762212A CN103762212A (en) | 2014-04-30 |
| CN103762212B true CN103762212B (en) | 2016-11-30 |
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