CN103731045A - High voltage power supply - Google Patents
High voltage power supply Download PDFInfo
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- CN103731045A CN103731045A CN201410022858.8A CN201410022858A CN103731045A CN 103731045 A CN103731045 A CN 103731045A CN 201410022858 A CN201410022858 A CN 201410022858A CN 103731045 A CN103731045 A CN 103731045A
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Abstract
The invention provides a high voltage power supply and relates to the electronic technical field. The high voltage power supply comprises a fully-controlled three-phase rectifier circuit, an IGBT (Insulated Gate Bipolar Transistor) inverter circuit, a transformer and a matrix topology voltage doubling rectifier circuit; the input end of the matrix topology voltage doubling rectifier circuit is connected with a three-phase alternating current power supply through the transformer, the IGBT inverter circuit and the fully-controlled three-phase rectifier circuit in turn; the output end of the matrix topology voltage doubling rectifier circuit serves as the output end of the high voltage power supply. According to the high voltage power supply, the problem that the output voltage of the high voltage power supply is difficult to improve in the prior art can be solved.
Description
Technical field
The present invention relates to electronic technology field, particularly electron beam welding technology, relates in particular to a kind of high voltage source.
Background technology
At present, due to features such as the welding quality of electron beam welding are high, sweating heat distortion is little, become with fastest developing speed, and the electron beam technology being most widely used.Electron beam welding technology is using high-power electron beam as processing thermal source, uses the metal of the beam bombardment weldment joint of high-energy-density, makes its Flashmelt, and the rapid cooling object that reaches welding.
Electron beam welding technology is had relatively high expectations for the high voltage source of its application, because high voltage source is directly determining the stable of high voltage and line, and then can have influence on the quality of weld seam.The applied high voltage source of current electron beam welding technology is general adopts a transformation, mainly in transformer, by the series-parallel system of secondary winding, obtains high voltage output and high-power output, relies on afterwards rectification to obtain needed voltage again.Current, people wish to obtain higher output voltage from high voltage source, to meet the requirement of electronic welding.And what obtain at present that higher output voltage adopts is generally to increase winding in transformer, and improve the mode of input voltage, this just needs transformer can bear higher input voltage, and then need to increase the insulation distance of transformer.And the insulation distance that increases transformer easily causes the problem that leakage field is larger.The mode that visible employing changes the winding of transformer and improves input voltage requires very high to current transformer, the more difficult realization of output voltage that makes to improve high voltage source.
Summary of the invention
The embodiment of the present invention provides a kind of high voltage source, improves the problem of the more difficult realization of output voltage of high voltage source to solve prior art.
For achieving the above object, the present invention adopts following technical scheme:
A kind of high voltage source, comprise full control rectified three-phase circuit, insulated gate bipolar transistor IGBT inverter circuit, transformer and matrix topology voltage doubling rectifing circuit, the input of described matrix topology voltage doubling rectifing circuit successively by described transformer, IGBT inverter circuit and entirely control rectified three-phase circuit connect three-phase alternating-current supply, the output of described matrix topology voltage doubling rectifing circuit is as the output of described high voltage source.
Described matrix topology voltage doubling rectifing circuit comprises voltage doubling unit gate array, multiple divider resistance, low potential end and zero potential end, and described multiple divider resistances are connected between described low potential end and described zero potential end; Every a line of described voltage doubling unit gate array all connects a divider resistance, the line number of described voltage doubling unit gate array is longitudinal dimension of described voltage doubling unit gate array, and the columns of described voltage doubling unit gate array is the transverse dimensions of described voltage doubling unit gate array.
The transverse dimensions of described voltage doubling unit gate array is more than or equal to one, and longitudinal dimension of described voltage doubling unit gate array is greater than one.
Described high voltage source comprises multiple transformers, and the quantity of described transformer is identical with the value of described transverse dimensions.
Described voltage doubling unit gate array comprises multiple voltage doubling unit circuit, and described voltage doubling unit circuit comprises the first diode, the second diode, the 3rd diode, the 4th diode, the first electric capacity, the second electric capacity and the 3rd electric capacity;
After described the first diode is connected with described the second diode, with described the first Capacitance parallel connection; After described the 3rd diode is connected with described the 4th diode, with described the first Capacitance parallel connection;
The negative pole of described the first diode is connected with the first end of described the second electric capacity, and the negative pole of described the 3rd diode is connected with the first end of described the 3rd electric capacity;
The positive pole of the positive pole of described the first diode and described the 3rd diode is connected with one end of the corresponding divider resistance of row at its place, and the other end of the negative pole of described the second diode and the negative pole of described the 4th diode and the corresponding divider resistance of row at its place is connected.
In described voltage doubling unit circuit, second end of the second electric capacity of the voltage doubling unit circuit of a line adjacent with described zero potential end and one end of the secondary winding of described transformer are connected, the second end of the 3rd electric capacity is connected with the other end of the secondary winding of described transformer, and the mid point of the negative pole of the second diode and the negative pole of the 4th diode and the secondary winding of described transformer is connected.
Each described the first electric capacity in each voltage doubling unit circuit of same row is connected to low potential end successively from zero potential end, and each described the second electric capacity is connected to low potential end successively from zero potential end, and each described the 3rd electric capacity is connected to low potential end successively from zero potential end.
Described high voltage source also comprises the first digital signal processor and the second digital signal processor;
Described the first digital signal processor is loaded with the voltage feedback signal and the voltage given signal setting in advance of the output of described high voltage source, and is connected with described IGBT inverter circuit; Described the first digital signal processor is for controlling the ON time of described IGBT inverter circuit;
Described the second digital signal processor is loaded with level demand signal and power feedback signal, and is connected with described full control rectified three-phase circuit; Described level demand signal is the given value of current signal by setting in advance and the voltage given signal acquisition setting in advance; Described power feedback signal obtains by current feedback signal and described voltage feedback signal; Described current feedback signal is to obtain by the electric current of the output of described high voltage source; Described the second digital signal processor is for controlling the ON time of described full control rectified three-phase circuit.
The high voltage source that the embodiment of the present invention provides, adopted matrix topology voltage doubling rectifing circuit, the input of described matrix topology voltage doubling rectifing circuit successively by described transformer, IGBT inverter circuit and entirely control rectified three-phase circuit connect three-phase alternating-current supply, the output of described matrix topology voltage doubling rectifing circuit is as the output of described high voltage source.Thereby by the matrix topology voltage doubling rectifing circuit of different dimensions, can obtain having the high voltage source of different output voltages.And that the winding of the change transformer that prior art adopts the mode that improves input voltage require current transformer is very high, the more difficult realization of output voltage that makes to improve high voltage source.Visible, the present invention adopts matrix topology voltage doubling rectifing circuit, can improve the output voltage of high voltage source.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structural representation of the high voltage source that Fig. 1 provides for the embodiment of the present invention;
The structural representation of the high voltage source that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 is the structural representation of the matrix topology voltage doubling rectifing circuit in the embodiment of the present invention;
Fig. 4 is the structural representation of the matrix topology voltage doubling rectifing circuit in the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, the high voltage source that the embodiment of the present invention provides, comprise full control rectified three-phase circuit 11, insulated gate bipolar transistor IGBT inverter circuit 12, transformer 13 and matrix topology voltage doubling rectifing circuit 14, the input 141 of this matrix topology voltage doubling rectifing circuit 14 is successively by this transformer 13, IGBT inverter circuit 12 and entirely control rectified three-phase circuit 11 and connect three-phase alternating-current supply, and the output 142 of this matrix topology voltage doubling rectifing circuit 14 is as the output of high voltage source.
The high voltage source that the embodiment of the present invention provides, adopted matrix topology voltage doubling rectifing circuit, the input of this matrix topology voltage doubling rectifing circuit successively by transformer, IGBT inverter circuit and entirely control rectified three-phase circuit connect three-phase alternating-current supply, the output of this matrix topology voltage doubling rectifing circuit is as the output of high voltage source.By the matrix topology voltage doubling rectifing circuit of different dimensions, can obtain having the high voltage source of different output voltages.And that the winding of the change transformer that prior art adopts the mode that improves input voltage require current transformer is very high, the more difficult realization of output voltage that makes to improve high voltage source.Visible, the present invention adopts matrix topology voltage doubling rectifing circuit, can improve the output voltage of high voltage source.
As shown in Figure 2, high voltage source provided by the invention comprises full control rectified three-phase circuit 11, insulated gate bipolar transistor IGBT inverter circuit 12, transformer 13 and matrix topology voltage doubling rectifing circuit 14, the input 141 of this matrix topology voltage doubling rectifing circuit 14 is successively by transformer 13, IGBT inverter circuit 12 and entirely control rectified three-phase circuit 11 and connect three-phase alternating-current supply, and the output 142 of this matrix topology voltage doubling rectifing circuit 14 is as the output of high voltage source.
Matrix topology voltage doubling rectifing circuit 14 is described specifically herein, as shown in Figure 3, this matrix topology voltage doubling rectifing circuit 14 comprises voltage doubling unit gate array 101, multiple divider resistance 102, low potential end 103 and zero potential end 104, and the plurality of divider resistance 102 is connected between low potential end 103 and zero potential end 104.Every a line of voltage doubling unit gate array 101 all connects a divider resistance 102, the line number of voltage doubling unit gate array 101 is longitudinal dimension of voltage doubling unit gate array 101, and the columns of voltage doubling unit gate array 101 is the transverse dimensions of voltage doubling unit gate array 101.
The transverse dimensions of this voltage doubling unit gate array 101 can be more than or equal to one, and longitudinal dimension of voltage doubling unit gate array 101 can be greater than one.
In Fig. 3, the transverse dimensions of this voltage doubling unit gate array 101 is 2, and longitudinally dimension is 4.In addition, as shown in Figure 4, the transverse dimensions of voltage doubling unit gate array 101 is 6, and longitudinally dimension is 10.The transverse dimensions of this voltage doubling unit gate array 101 is to be determined by the power output of needed high voltage source, and longitudinal dimension of this voltage doubling unit gate array 101 is to be determined by the output voltage of needed high voltage source.For example, the input power of matrix topology voltage doubling rectifing circuit 14 is 10 kilowatts, and the input voltage of matrix topology voltage doubling rectifing circuit 14 is 15 kilovolts.
The transverse dimensions needing is shown with formula table:
If the power output of needed high voltage source is 20 kilowatts, herein, transverse dimensions is 2.
The longitudinal dimension needing is shown with formula table:
If the output voltage of needed high voltage source is 60 kilovolts, herein, longitudinally dimension is 4.
In addition, as shown in Figure 4, if the power output of needed high voltage source is 60 kilowatts, the output voltage of needed high voltage source is 150 kilovolts, and according to above-mentioned two formula, can obtain transverse dimensions is 6, and longitudinally dimension is 10.
As shown in Figure 3, this high voltage source comprises multiple transformers 13, and the quantity of transformer 13 is identical with the value of above-mentioned transverse dimensions.If the value of described transverse dimensions is higher, the quantity of this transformer is larger, and than the less high voltage source of the value of transverse dimensions, the power output of its high voltage source obtaining is larger.
This high voltage source can comprise multiple transformers 13, thereby than the high voltage source only with a transformer, has improved the power output of high voltage source.And for the high voltage source with multiple transformers 13, the inversion phase difference output of this high voltage source can represent with following formula:
For example, transverse dimensions is 2, and inversion phase difference output is 180 degree, and the mode that high voltage source improves power output by multiple transformers 13 is called phase difference control, by phase difference control, can improve the stability of high voltage source output voltage.
As shown in Figure 3, this voltage doubling unit gate array 101 comprises multiple voltage doubling unit circuit 105, and this voltage doubling unit circuit 105 comprises the first diode 106, the second diode 107, the 3rd diode 108, the 4th diode 109, the first electric capacity 110, the second electric capacity 111 and the 3rd electric capacity 112.
As shown in Figure 3, after this first diode 106 is connected with this second diode 107, in parallel with this first electric capacity 110.After the 3rd diode 108 is connected with the 4th diode 109, in parallel with this first electric capacity 110.
Concrete, the negative pole of this first diode 106 is connected with the first end 1111 of the second electric capacity 111, and the negative pole of the 3rd diode 108 is connected with the first end 1121 of the 3rd electric capacity 112.
Concrete, the positive pole of this first diode 106 is connected with one end of the 3rd positive pole of diode 108 and the corresponding divider resistance 102 of the row at its place, and the negative pole of this second diode 107 is connected with the other end of the 4th negative pole of diode 109 and the corresponding divider resistance 102 of the row at its place.
In addition, as shown in Figure 3, in voltage doubling unit circuit 105, the second end 1112 of the second electric capacity 111 of the voltage doubling unit circuit 105 of a line adjacent with this zero potential end 104 is connected with one end of the secondary winding 131 of transformer 13, the second end 1122 of the 3rd electric capacity 112 is connected with the other end of the secondary winding 131 of transformer 13, and the mid point of the negative pole of the second diode 107 and the negative pole of the 4th diode 109 and the secondary winding 131 of this transformer 13 is connected.
Further, as shown in Figure 3, each the first electric capacity 110 in each voltage doubling unit circuit 105 of same row is connected to low potential end 103 successively from zero potential end 104, each the second electric capacity 111 is connected to low potential end 103 successively from zero potential end 104, and each the 3rd electric capacity 112 is connected to low potential end 103 successively from zero potential end 104.
In addition, as shown in Figure 2, this high voltage source also comprises the first digital signal processor 15 and the second digital signal processor 16.
This first digital signal processor 15 is loaded with the voltage feedback signal and the voltage given signal setting in advance of the output of high voltage source, and is connected with IGBT inverter circuit 12.
Wherein, this first digital signal processor 15 is for controlling the ON time of this IGBT inverter circuit 12.
This second digital signal processor 16 is loaded with level demand signal and power feedback signal, and is connected 11 with full control rectified three-phase circuit.
Wherein, this level demand signal is given value of current signal by setting in advance and the voltage given signal acquisition that sets in advance, and this power feedback signal obtains by current feedback signal and voltage feedback signal.This current feedback signal is to obtain by the electric current of the output of high voltage source.This second digital signal processor 16 is for controlling the ON time of this full control rectified three-phase circuit 11.
By this first digital signal processor and the second digital signal processor, can carry out two closed-loop controls to whole high voltage source.Hour, spread of voltage, therefore, by two closed-loop controls, keeps suitable pulsewidth, when pulsewidth is larger, dwindles ON time for or the device load that connect unloaded due to output in high voltage source, in pulsewidth hour, increases ON time.By keeping the pulsewidth of suitable inverter circuit, make the ripple of High voltage output less.Meanwhile, when high voltage source need to be carried out high-power output, the pulsewidth of inverter circuit can be not wide, retained certain nargin, guaranteed the reliability of power supply.
The high voltage source that the embodiment of the present invention provides, adopted matrix topology voltage doubling rectifing circuit, the input of this matrix topology voltage doubling rectifing circuit successively by transformer, IGBT inverter circuit and entirely control rectified three-phase circuit connect three-phase alternating-current supply, the output of this matrix topology voltage doubling rectifing circuit is as the output of high voltage source.Thereby by the matrix topology voltage doubling rectifing circuit of different dimensions, can obtain having the high voltage source of different output voltages.And that the winding of the change transformer that prior art adopts the mode that improves input voltage require current transformer is very high, the more difficult realization of output voltage that makes to improve high voltage source.Visible, the present invention adopts matrix topology voltage doubling rectifing circuit, can improve the output voltage of high voltage source.
In the present invention, applied specific embodiment principle of the present invention and execution mode are set forth, the explanation of above embodiment is just for helping to understand structure of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (8)
1. a high voltage source, it is characterized in that, comprise full control rectified three-phase circuit, insulated gate bipolar transistor IGBT inverter circuit, transformer and matrix topology voltage doubling rectifing circuit, the input of described matrix topology voltage doubling rectifing circuit successively by described transformer, IGBT inverter circuit and entirely control rectified three-phase circuit connect three-phase alternating-current supply, the output of described matrix topology voltage doubling rectifing circuit is as the output of described high voltage source.
2. high voltage source according to claim 1, it is characterized in that, described matrix topology voltage doubling rectifing circuit comprises voltage doubling unit gate array, multiple divider resistance, low potential end and zero potential end, and described multiple divider resistances are connected between described low potential end and described zero potential end; Every a line of described voltage doubling unit gate array all connects a divider resistance, the line number of described voltage doubling unit gate array is longitudinal dimension of described voltage doubling unit gate array, and the columns of described voltage doubling unit gate array is the transverse dimensions of described voltage doubling unit gate array.
3. high voltage source according to claim 2, is characterized in that, the transverse dimensions of described voltage doubling unit gate array is more than or equal to one, and longitudinal dimension of described voltage doubling unit gate array is greater than one.
4. high voltage source according to claim 3, is characterized in that, described high voltage source comprises multiple transformers, and the quantity of described transformer is identical with the value of described transverse dimensions.
5. high voltage source according to claim 4, it is characterized in that, described voltage doubling unit gate array comprises multiple voltage doubling unit circuit, and described voltage doubling unit circuit comprises the first diode, the second diode, the 3rd diode, the 4th diode, the first electric capacity, the second electric capacity and the 3rd electric capacity;
After described the first diode is connected with described the second diode, with described the first Capacitance parallel connection; After described the 3rd diode is connected with described the 4th diode, with described the first Capacitance parallel connection;
The negative pole of described the first diode is connected with the first end of described the second electric capacity, and the negative pole of described the 3rd diode is connected with the first end of described the 3rd electric capacity;
The positive pole of the positive pole of described the first diode and described the 3rd diode is connected with one end of the corresponding divider resistance of row at its place, and the other end of the negative pole of described the second diode and the negative pole of described the 4th diode and the corresponding divider resistance of row at its place is connected.
6. high voltage source according to claim 5, it is characterized in that, in described voltage doubling unit circuit, second end of the second electric capacity of the voltage doubling unit circuit of a line adjacent with described zero potential end and one end of the secondary winding of described transformer are connected, the second end of the 3rd electric capacity is connected with the other end of the secondary winding of described transformer, and the mid point of the negative pole of the second diode and the negative pole of the 4th diode and the secondary winding of described transformer is connected.
7. high voltage source according to claim 6, it is characterized in that, each described the first electric capacity in each voltage doubling unit circuit of same row is connected to low potential end successively from zero potential end, each described the second electric capacity is connected to low potential end successively from zero potential end, and each described the 3rd electric capacity is connected to low potential end successively from zero potential end.
8. according to the high voltage source described in claim 1-7 any one, it is characterized in that, described high voltage source also comprises the first digital signal processor and the second digital signal processor;
Described the first digital signal processor is loaded with the voltage feedback signal and the voltage given signal setting in advance of the output of described high voltage source, and is connected with described IGBT inverter circuit; Described the first digital signal processor is for controlling the ON time of described IGBT inverter circuit;
Described the second digital signal processor is loaded with level demand signal and power feedback signal, and is connected with described full control rectified three-phase circuit; Described level demand signal is the given value of current signal by setting in advance and the voltage given signal acquisition setting in advance; Described power feedback signal obtains by current feedback signal and described voltage feedback signal; Described current feedback signal is to obtain by the electric current of the output of described high voltage source; Described the second digital signal processor is for controlling the ON time of described full control rectified three-phase circuit.
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| CN201410022858.8A CN103731045A (en) | 2014-01-17 | 2014-01-17 | High voltage power supply |
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| CN201410022858.8A CN103731045A (en) | 2014-01-17 | 2014-01-17 | High voltage power supply |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111624452A (en) * | 2020-05-14 | 2020-09-04 | 广东电网有限责任公司 | High-voltage generator for insulation test of distribution cable |
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Application publication date: 20140416 |