CN103730571A - Method and apparatus for forming contact in cell of resistive random access memory to reduce voltage required to program the cell - Google Patents
Method and apparatus for forming contact in cell of resistive random access memory to reduce voltage required to program the cell Download PDFInfo
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- CN103730571A CN103730571A CN201310488552.7A CN201310488552A CN103730571A CN 103730571 A CN103730571 A CN 103730571A CN 201310488552 A CN201310488552 A CN 201310488552A CN 103730571 A CN103730571 A CN 103730571A
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- 238000000034 method Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 23
- 230000004044 response Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- -1 oxonium ion Chemical class 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
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- 239000002096 quantum dot Substances 0.000 description 1
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Abstract
A cell of a resistive random access memory includes a resistive element and an access device. The resistive element includes (i) a first electrode and (ii) a second electrode. The access device is configured to select and deselect the cell. The access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact includes (i) a first surface in contact with the second contact and (ii) a second surface in contact with the second electrode. The first surface defines a first surface area, and the second surface defines a second surface area. The first surface area is greater than the second surface area.
Description
the cross reference of related application
The application requires in the priority of No. 61/713894 U.S. Provisional Application of submission on October 15th, 2012.By reference whole disclosures of the above-mentioned application being cited are incorporated to herein.
Technical field
The disclosure relates in general to resistive random access memory (RRAM) unit, and more specifically, relates to for forming contact in RRAM unit to reduce the technology to RRAM unit programming required voltage.
Background technology
Resistive random access memory (RRAM) array comprises the RRAM unit that is arranged in word line and bit line intersection.RRAM unit comprises the insulating material (for example, dielectric) as resistive element.The resistance of insulating material increases when electric current is flowed through insulating material in one direction, and reduces when electric current is flowed through insulating material in the opposite direction.Therefore, RRAM unit can (i) by allowing the electric current RRAM unit of flowing through in one direction be programmed to high resistance state, and (ii) by allowing the electric current RRAM unit of flowing through in the opposite direction be programmed to low resistance state.High resistance state can be used for presentation logic high (binary one), and low resistance state can be used for presentation logic low (Binary Zero), and vice versa.
The RRAM unit that the electric current of use opposite polarity is programmed to high and low resistance state is called as ambipolar RRAM unit.Alternatively, RRAM unit can be by allowing flow through the in the same direction insulating material of RRAM unit of the electric current of two kinds of different amplitudes be programmed to height and low resistance state.The RRAM unit that the electric current of use two kinds of different amplitudes is in the same direction programmed to high and low resistance state is called as monopole type RRAM unit.
Each RRAM unit comprises access device (such as diode or transistor).This access device and resistive element are connected in series.Use access devices can during read and write operation, select and cancel the RRAM unit of selecting in RRAM array.
Summary of the invention
The unit of resistive random access memory comprises resistive element and access device.Resistive element comprises (i) first electrode and (ii) the second electrode.Access device is configured to select and cancel selected cell.Access device comprises the first terminal that (i) be connected to the first contact and (ii) and is connected to the second the second terminal contacting.The second contact is connected to the second electrode of resistive element via the 3rd contact.The 3rd contact comprises that (i) contacts the first surface contacting and the second surface (ii) contacting with the second electrode with second.First surface limits first surface area, and second surface limits second surface area.First surface area is greater than second surface area.
In another feature, the 3rd contact has the shape of pyramid or circular cone.
In another feature, unit is also included in the interface metal level between the second contact and the 3rd first surface contacting.
In another feature, the 3rd contact is partly etched with the volume that reduces the 3rd contact.
In further feature, resistive element comprises the First Transition metal oxide layer with the adjacent layout of the second electrode, and with (i) First Transition metal oxide layer and (ii) the second reacting metal layer of the adjacent layout of the first electrode.
In another feature, First Transition metal oxide layer is thinner with respect to the remainder of ground floor near the center of ground floor.
In further feature, the first electrode of resistive element is connected to the 4th contact, and be connected to access device the first terminal first contact via the 5th contact, be connected to bit line.
In further feature, the 6th contact be arranged in (i) be connected to access device the first terminal first contact contact with (ii) the 5th between, and the 6th contact have the 3rd contact structure.
In another feature, resistive element is configured to (i) in response to applying the first voltage and have the first resistance across the first electrode and the second electrode, and (ii) in response to applying second voltage and there is the second resistance across the first electrode and the second electrode.
In another feature, access device also comprises the control terminal that is connected to word line.
Again in further feature, relate to the method for the element of the unit of contact resistance formula random access memory, wherein the element of unit comprises (i) access device and (ii) resistive element, access device comprises (i) the first terminal and (ii) the second terminal, resistive element comprises (i) first electrode and (ii) the second electrode, and access device is used for selecting and cancelling selected cell.The method comprises that (i) the first terminal of access device and (ii) second terminal are connected to respectively to (i) first to be contacted with (ii) second and contact, and the second contact of access device is connected to the second electrode of resistive element via the 3rd contact.The 3rd contact comprises that (i) contacts the first surface contacting and the second surface (ii) contacting with the second electrode with second.First surface limits first surface area, and second surface limits second surface area.First surface area is greater than second surface area.
In another feature, the 3rd contact has the shape of pyramid or circular cone.
In another feature, the method is also included between the second contact and the 3rd first surface contacting and arranges interface metal level.
In another feature, the method also comprises that partly etching the 3rd contacts to reduce the volume of the 3rd contact.
In other a little features, the method also comprise by with the adjacent layout First Transition of the second electrode metal oxide layer, and by with (i) First Transition metal oxide layer and (ii) adjacent layout the second reacting metal layer of the first electrode form resistive element.
In another feature, First Transition metal oxide layer is thinner with respect to the remainder of ground floor near the center of ground floor.
In further feature, the method also comprises the first electrode of resistive element is connected to the 4th contact, and the first contact of the first terminal that is connected to access device is connected to bit line via the 5th contact.
In another feature, the method is also included in the first contact that (i) be connected to the first terminal of access device and arranges the 6th contact between contact with (ii) the 5th, wherein the 6th contacts and has the 3rd structure contacting.
In further feature, the method also comprises across the first electrode and the second electrode and applies the first voltage unit is programmed for to the first resistance states, and applies second voltage unit is programmed for to the second resistance states across the first electrode and the second electrode.
In further feature, the method also comprises the control terminal of access device is connected to word line, and uses word line options and cancel selected cell.
Other scope of application of the present disclosure will become obvious from detailed description, claim and accompanying drawing.The detailed description and specific examples are only intended to for illustration purpose, and are not intended to limit the scope of the present disclosure.
Accompanying drawing explanation
Figure 1A illustrates the schematic diagram of the example of resistor random access memory cell.
Figure 1B illustrates the schematic diagram of the resistive element of the RRAM unit shown in Figure 1A.
Fig. 1 C illustrates because oxonium ion causes and create multiple conductive paths transition metal oxide layer to the motion of reacting metal layer from the transition metal oxide layer of the resistive element shown in Figure 1B.
Fig. 1 D illustrates because oxonium ion is back to transition metal oxide layer from the reacting metal layer of the resistive element shown in Figure 1B and cause multiple conductive paths of resetting transition metal oxide layer.
Fig. 2 illustrates the example of RRAM unit, and wherein all layers of resistive element are all smooth.
Fig. 3 is illustrated in the example of the pointed contact of growing on the surface of drain electrode contact of the access device of RRAM unit.
Fig. 4 is illustrated in the example of the pointed contact of growing on the interface metal level of growth in advance on the surface of drain electrode contact of the access device of RRAM unit.
Fig. 5 illustrates the example of the pointed contact through eat-backing.
Fig. 6 A illustrates the example of the RRAM unit of the resistive element that has pointed contact and create by the layer of the resistive element of growing around pointed contact.
The technique at the thickness of place, tip attenuate transition metal oxide skin(coating) is carried out at the tip of the transition metal oxide layer by the resistive element shown in bombardment Fig. 6 A during Fig. 6 B-6D is shown in reacting metal layer and forms.
Fig. 7 illustrates whole features of the RRAM unit comprising shown in Fig. 6 A, and is additionally included in the example of the RRAM unit of the pointed contact of growing on the surface of source electrode contact of access device.
Fig. 8 is the flow chart of the method for creating the pointed contact shown in Fig. 3 to Fig. 7 and resistive element.
In the accompanying drawings, can reuse reference number and identify similar and/or similar elements.
Embodiment
Figure 1A illustrates the example of resistive random access memory (RRAM) unit 100.RRAM unit 100 comprises access device 102 and resistive element 104.In the example shown, access device 102 comprises transistor.Alternatively, can use diode or other suitable switch element as access device 102.
Figure 1B illustrates resistive element 104.Resistive element 104 comprises top electrodes 106, bottom electrode 108, dielectric layer 110 and reacting metal layer 112.For instance, dielectric layer 110 comprises transition metal oxide (for example, HfO
2) layer.Dielectric layer 110 is as the alms giver of oxonium ion.For instance, reacting metal layer 112 comprises by titanium (Ti) layer.
Fig. 1 C illustrates oxonium ion 113 flowing from dielectric layer 110 to reacting metal layer 112 when applying positive voltage with respect to bottom electrode 108 to top electrodes 106.Mobile from dielectric layer 110 to reacting metal layer 112 of oxonium ion 113 created multiple conductive paths 114.Therefore, resistive element 104 has low resistance, and RRAM unit 100 has low resistance state.
Fig. 1 D illustrates oxonium ion 113 flowing from reacting metal layer 112 to dielectric layer 110 when relative bottom electrode 108 applies negative voltage (or less positive voltage of the positive voltage applying than Fig. 1 C) to top electrodes 106.Oxonium ion 113 is back to dielectric layer 110 through multiple conductive paths 114.Therefore, resistive element 104 has high resistance, and RRAM unit 110 has high resistance state.
Fig. 2 illustrates the example of RRAM unit 100.For instance, access device 102 be shown as there is source terminal, the mos field effect transistor (MOSFET) of drain terminal and gate terminal.Run through the disclosure, although concrete reference source and drain terminal are described some aspect, source electrode and drain terminal are interchangeable.Source terminal is connected to bit line via contact.Gate terminal is connected to word line via contact.Drain terminal is connected to the bottom electrode 108 of resistive element 104 via contact.
Each in bottom electrode 108, dielectric layer 110, reacting metal layer 112 and top electrodes 106 is the flatness layer of respective material.The flatness of these layers causes the formation of the multiple conductive paths shown in Fig. 1 C.Multiple conductive paths make RRAM unit 100 programming difficulties.Particularly, when programming RRAM unit 100 from low resistance state to high resistance state, must apply quite high voltage and be reset to guarantee the each path in multiple conductive paths.
The disclosure relates to the novel contact of establishment between access device drain electrode contact and the bottom electrode of resistive element.Novel contact is pointed, horn structure.The disclosure also relates to a kind of novel resistive element structure.Specifically, resistive element by around pointed contact, arrange resistive element bottom electrode, dielectric layer, reacting metal layer and top electrodes layer create.In addition at the thickness of the dielectric layer at the place, tip of pointed contact, be less than, the thickness of the remainder of dielectric layer.This structure allows to form single conductive path in dielectric layer, and this structure is easy to use than the lower voltage of voltage of the RRAM unit that is commonly used to programme and programmes.
Compare with traditional smooth contact, this novel structure has strengthened in the field density of the center of resistive element and current density.The programming of localization makes new RRAM unit have better writability and device matching compared with traditional RRAM unit.This new method is without increase mask layer in manufacturing process.
Fig. 3 illustrates according to the example of RRAM of the present disclosure unit 200.RRAM unit 200 comprises access device 102.Pointed contact 202 is created between the drain electrode contact 204 and the bottom electrode (not shown) of resistive element of access device 102.Pointed contact 202 can adopt nanometer technology (such as Quantum Dots Growth) to realize by contacting in the drain electrode of access device 102 on 204 surfaces.Use these methods, in drain electrode, contact the upper accurately growth in (for example, tungsten) 204 surfaces and take shelter from the thunder aciculiform structures to form pointed contact 202.
Fig. 4 illustrates according to the example of the alternative of RRAM of the present disclosure unit 210.Substitute directly the pointed contact 202 of for example, growing on the surface of drain electrode contact (, tungsten) 204 of access device 102, initial, the interface metal material 212 that can optionally grow suitable on the surface of drain electrode contact 204.Then, the pointed contact 202 of growing on interface metal material 212.
Fig. 5 illustrates according to the example of another alternative of RRAM of the present disclosure unit 220.Alternatively, for better contact resistance, can eat-back for example, a part with the initial surface of drain electrode contact (, the tungsten) 204 of exposure access device 102 of pointed contact 202.Result is to generate less pointed contact 202-1 in the surperficial mid portion of the drain electrode contact 204 of access device 102.
Fig. 6 A illustrates according to the routine cross section of RRAM of the present disclosure unit 300.RRAM unit 300 comprises access device 102 and according to new resistive element 302 of the present disclosure.As previously mentioned, pointed contact 202 (or the 202-1 shown in Fig. 5) is grown in for example, on the surface of drain electrode contact (, tungsten) 204 of access device 102 (or on the interface metal material 212 shown in Fig. 4).
As shown in the figure, resistive element 302 is included in pointed contact 202 bottom electrode 304, dielectric layer 306, reacting metal layer 308 and the top electrodes 310 of growth around.For instance, dielectric layer 306 comprises transition metal oxide (for example, HfO
2) layer.Dielectric layer 306 is as the alms giver of oxonium ion.For instance, reacting metal layer 308 comprises titanium (Ti) layer.
As shown in Fig. 6 B and Fig. 6 D, during forming reacting metal layer 308, technique (such as physical vapour deposition (PVD) (PVD)) can be adjusted into and bombard more tip position.For instance, the tip of transition metal oxide layer (that is, dielectric layer 306) can adopt inert gas (for example argon) to bombard.Due to bombardment, transition metal oxide layer (that is, dielectric layer 306) can become at place, tip than slightly thin at place, inclined-plane.In Fig. 6 C, the distance d1 between the tip of dielectric layer 306 and the tip of bottom electrode 304 is less than the distance d2 between dielectric layer 306 and bottom electrode 304 other places.By guaranteeing, to the programming of RRAM unit 300, more easily via single conductive path, there is (that is, being limited to) at place, tip in the thickness at place, tip of dielectric layer 306.Alternatively, after bottom electrode, transition metal oxide, reacting metal and top electrodes deposition, can utilize planarization to create more smooth surface, for patterning step below.
The top electrodes 310 of resistive element 302 is connected to contact 312.Contact 312 provides the connection of going to other circuit arrangement voltage generator of RRAM unit 300 (for example, be used for programming).The source terminal of access device 102 is connected to source electrode contact 314.Source electrode contact 314 is connected to bit line via contact 316.
Fig. 7 illustrates another embodiment according to RRAM350 of the present disclosure.When growing pointed contact 202 on drain electrode contact 204 surfaces, the pointed contact 352 of also growing in source electrode contact 314.Pointed contact 352 can contact 202 for same scale or can be less than pointed contact 202 with pointed.If the resistivity of pointed contact 352 is high, pointed contact 352 can be etched, if or the resistivity of pointed contact 352 low, pointed contact 352 can be retained on the top of source electrode contact 314.
In general, pointed contact 202,202-1 and 352 can have the shape of pyramid or circular cone, wherein the base portion of pyramid or circular cone is connected to drain electrode contact 204 (and source electrode contact 314), and the summit of pyramid or the summit of circular cone are connected to the bottom electrode of resistive element.Pyramid is by polygon base portion is connected to, to be known as the polyhedron that the point on pyramid summit forms.For instance, depend on the shape of drain electrode contact 204 (and source electrode contact 314), pyramid can be four jiaos of pyramids, five jiaos of pyramids, hexagonal pyramid or tetrahedrons.Alternatively, for instance, if drain electrode contact 204 (and source electrode contact 314) be shaped as circle or ellipse, pointed contact 202,202-1 and 352 shape can be conical.In some embodiments, no matter what shape drain electrode contact 204 (and source electrode contact 314) is, pointed contact 202,202-1 and 352 can have following shape, and it has at contact 204 with the drain electrode contact point place of (and source electrode contacts 314) than the surface area larger with the contact point place of the bottom electrode of resistive element.Conventionally, pointed contact 202,202-1 and 352 shape with the contact point place of resistive element assemble for have minimum yardstick a bit.
Fig. 8 illustrates for creating pointed contact between the drain electrode contact at access device and the bottom electrode of resistive element and for creating the method 400 according to resistive element of the present disclosure.In step 402, on the surface of drain electrode contact or be grown in advance the pointed contact of growing on the surface of lip-deep interface metal level of drain electrode contact.In step 404, eat-back alternatively pointed contact.In step 406, by the layer at grow around pointed contact bottom electrode, transition metal oxide, reacting metal and top electrodes, on the pointed top contacting, create resistive element.In step 408, during reacting metal layer forms, technique is adjusted into and bombards more tip position, make transition metal oxide layer thinner at place, inclined-plane at place, tip ratio.In step 410, if the resistivity height of the pointed contact also forming on the surface of source electrode contact, pointed contact can be etched, if or the resistivity of pointed contact low, it can be retained.In step 412, the top electrodes of resistive element is connected to another contact for being connected to other circuit arrangement, and via another contact, source electrode contact (have or without the pointed contact being associated) is connected to bit line.
Aforementioned description is only exemplary in essence, and is intended to absolutely not limit the disclosure, its application or use.Can realize extensive instruction of the present disclosure with various forms.Therefore, although the disclosure comprises concrete example, real scope of the present disclosure should be so not limited, and this is because after research accompanying drawing, specification and claims, other modification will become obvious.At least one in phrase A used herein, B and C should be interpreted as using the logic (A or B or C) of non-exclusive logic OR.Should be appreciated that under the prerequisite that does not change principle of the present invention, can be with the one or more steps in different order (or simultaneously) manner of execution).
Claims (20)
1. a unit for resistive random access memory, described unit comprises:
Resistive element, wherein said resistive element comprises (i) first electrode and (ii) the second electrode; And
Access device, be configured to select and cancel and select described unit, wherein said access device comprises that the first terminal that (i) is connected to the first contact is connected to the second the second terminal contacting with (ii), and wherein said the second contact is connected to described second electrode of described resistive element via the 3rd contact
Wherein said the 3rd contact comprises that (i) contacts the first surface contacting and the second surface (ii) contacting with described the second electrode with described second,
Wherein (i) described first surface limits first surface area, and (ii) described second surface limits second surface area, and
Wherein said first surface area is greater than described second surface area.
2. unit according to claim 1, wherein said the 3rd contact has the shape of pyramid or circular cone.
3. unit according to claim 1, is also included in the interface metal level between described the second contact and the described the 3rd described first surface contacting.
4. unit according to claim 1, wherein said the 3rd contact is partly etched with the volume that reduces described the 3rd contact.
5. unit according to claim 1, wherein said resistive element comprises:
With the First Transition metal oxide layer of the adjacent layout of described the second electrode, and
With (i) described First Transition metal oxide layer and (ii) the second reacting metal layer of the adjacent layout of described the first electrode.
6. unit according to claim 5, wherein said First Transition metal oxide layer is thinner with respect to the remainder of described ground floor near the center of described ground floor.
7. unit according to claim 5, described first electrode of wherein said resistive element is connected to the 4th contact, and be wherein connected to described access device described the first terminal described first contact via the 5th contact, be connected to bit line.
8. unit according to claim 7, wherein the 6th contact be arranged in (i) be connected to described access device described the first terminal described first contact contact with (ii) the described the 5th between, and wherein said the 6th contact have described the 3rd contact structure.
9. unit according to claim 1, wherein said resistive element is configured to (i) in response to applying the first voltage and have the first resistance across described the first electrode and described the second electrode, and (ii) in response to applying second voltage and there is the second resistance across described the first electrode and described the second electrode.
10. unit according to claim 1, wherein said access device also comprises the control terminal that is connected to word line.
11. 1 kinds of methods for the element of the unit of contact resistance formula random access memory, the described element of wherein said unit comprises (i) access device and (ii) resistive element, wherein said access device comprises (i) the first terminal and (ii) the second terminal, wherein said resistive element comprises (i) first electrode and (ii) the second electrode, and wherein said access device is used for selecting and cancelling and select described unit, and described method comprises:
(i) described the first terminal of described access device and (ii) described second terminal are connected to respectively to (i) first to be contacted with (ii) second and contacts; And
Described second contact of described access device is connected to described second electrode of described resistive element via the 3rd contact,
Wherein said the 3rd contact comprises that (i) contacts the first surface contacting and the second surface (ii) contacting with described the second electrode with described second,
Wherein (i) described first surface limits first surface area, and (ii) described second surface limits second surface area, and
Wherein said first surface area is greater than described second surface area.
12. methods according to claim 11, wherein said the 3rd contact has the shape of pyramid or circular cone.
13. methods according to claim 11, are also included between described the second contact and the described the 3rd described first surface contacting and arrange interface metal level.
14. methods according to claim 11, also comprise described in partly etching that the 3rd contacts to reduce the volume of described the 3rd contact.
15. methods according to claim 11, also comprise by following steps and form described resistive element:
With the adjacent layout First Transition of described the second electrode metal oxide layer; And
With (i) described First Transition metal oxide layer and (ii) adjacent layout the second reacting metal layer of described the first electrode.
16. methods according to claim 15, wherein said First Transition metal oxide layer is thinner with respect to the remainder of described ground floor near the center of described ground floor.
17. methods according to claim 15, also comprise:
Described first electrode of described resistive element is connected to the 4th contact; And
Described first contact of the described the first terminal that is connected to described access device is connected to bit line via the 5th contact.
18. methods according to claim 17, also be included in described the first contact that (i) be connected to the described the first terminal of described access device and arrange the 6th contact between contact with (ii) the described the 5th, the wherein said the 6th contacts and has the described the 3rd structure contacting.
19. methods according to claim 11, also comprise:
Across described the first electrode and described the second electrode, apply the first voltage so that described unit is programmed for to the first resistance states; And
Across described the first electrode and described the second electrode, apply second voltage so that described unit is programmed for to the second resistance states.
20. methods according to claim 11, also comprise:
The control terminal of described access device is connected to word line; And
Use described word line options and cancel and select described unit.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261713894P | 2012-10-15 | 2012-10-15 | |
| US61/713,894 | 2012-10-15 | ||
| US14/050,720 US8934285B2 (en) | 2012-10-15 | 2013-10-10 | Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell |
| US14/050,720 | 2013-10-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103730571A true CN103730571A (en) | 2014-04-16 |
| CN103730571B CN103730571B (en) | 2018-07-27 |
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| CN201310488552.7A Expired - Fee Related CN103730571B (en) | 2012-10-15 | 2013-10-15 | The method and apparatus that contact is formed in resistor random access memory cell to reduce voltage needed for unit programming |
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| CN113206195A (en) * | 2021-04-30 | 2021-08-03 | 华中科技大学 | Memristor for regulating and controlling positioning of conductive filament based on quantum dots and preparation method of memristor |
| US11665913B2 (en) * | 2021-11-02 | 2023-05-30 | United Microelectronics Corp. | Resistive random access memory structure and fabricating method of the same |
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