CN103730206B - The method preparing transparent conducting film based on nano material - Google Patents
The method preparing transparent conducting film based on nano material Download PDFInfo
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- CN103730206B CN103730206B CN201210385813.8A CN201210385813A CN103730206B CN 103730206 B CN103730206 B CN 103730206B CN 201210385813 A CN201210385813 A CN 201210385813A CN 103730206 B CN103730206 B CN 103730206B
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 45
- 238000000576 coating method Methods 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 60
- 239000004744 fabric Substances 0.000 claims description 21
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 16
- 238000010422 painting Methods 0.000 claims description 16
- 239000002070 nanowire Substances 0.000 claims description 15
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 12
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 12
- 238000000016 photochemical curing Methods 0.000 claims description 9
- 238000002835 absorbance Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012459 cleaning agent Substances 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- -1 polyethylene terephthalate Polymers 0.000 claims description 2
- 230000010349 pulsation Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 18
- 238000000059 patterning Methods 0.000 abstract description 7
- 238000012805 post-processing Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 47
- 239000000523 sample Substances 0.000 description 12
- 238000007796 conventional method Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Manufacturing Of Electric Cables (AREA)
Abstract
The present invention relates to prepare nesa coating based on nano material especially nano silver wire.The present invention includes using high-energy flashlamp to make the annealing of described conducting film and the single step of patterning without post processing, to improve electric conductivity and to produce the pattern being not generally visible on the membrane, thus for contact panel or display manufacturing industry.
Description
Technical field
The method that the present invention relates to prepare nesa coating based on nano material, especially nano silver wire.This
Invention include use high-energy flashlamp make in the case of need not post processing conducting film annealing and patterning
Single step, to improve electric conductivity and to produce the most not on the film of industry preparing for touch panel or display
Visible pattern.
Background technology
The conventional method preparing nano silver wire is by solution process, and by various coating processes by nanometer
Line is coated on base material (U.S. Patent application of Publication No. 2011/0192633).By conventional method system
Standby film based on nano silver wire needs through post processing or post growth annealing to obtain higher electric conductivity.Allusion quotation
The post processing of type is that film is heated to high temperature, such as between 100-150 DEG C, enabling remove nano silver wire table
Non-conducting material on face, and nano wire itself has nearer contact each other.Use such height
It is possible to damage film base material and conductive region that temperature carries out the first problem of post processing.Use high-temperature post-treatment also
Need relatively long time and higher cost.Described method also needs to etch process subsequently with removing unit
Divide the step of material.High temperature is also unfavorable for any patterning of film.Typically require use index-matching material,
Such as, when using indium tin oxide (ITO) as nesa coating, after etching-film, need tool
There is the material that the refractive index with ITO matches so that described pattern is invisible.In the ink of coating
Light-sensitive material is at high temperature thermally degradated, and this destroys nano silver wire network, thus reduces the conduction in destroyed district
Property.If described destroyed district is through UV optical processing, those light-sensitive materials are degraded further, thus lead
Electricity is worse.On the other hand, nano silver wire is the most non-degradable, and thus conduction is more preferably.Use is passed through
Limit the conduction patterning preferably with the conventional method in the poor region of conduction and cause low optical property difference, by
This will not produce sightless pattern in nesa coating.
In view of the above problems, need to utilize less processing step and contribute to film patterning prepare transparent leading
The new method of electrolemma, especially in terms of preparing touch panel and other figuratum display of tool.
Summary of the invention
The method that the first aspect of the invention relates to preparing conducting film based on nano material, it is characterised in that
By using high-energy flashlamp to use a step annealing and Patternized technique.The method comprise the steps that with at least
3 kinds of different solvent cleaned base materials；It is dried described base material first time period at the first temperature；By described base
Material is immersed in the second time period in the isopropanol (IPA) of boiling；Described base material is at high temperature further dried
Three time periods；And the ink containing nano material is coated on base material formation painting cloth base material, wherein said
Nano material is dissolved in organic solvent.After using microscope to observe described painting cloth base material, when described coating
When base material is exposed under high-energy flashlamp, by physical mask, painting cloth base material is sheltered.Make in the process
Nano material be nano silver wire.High-energy flashlamp used can produce wavelength from 240nm to 1000nm
The light of high impulse.Peak power density during each pulse can be up to the pact to its average power density
1000 times.Conducting film prepared by the method for the present invention need not temperature-curable, but uses high-energy flashlamp to exist
On painting cloth base material, photocuring is carried out during one step annealing and Patternized technique.Has figuratum physical mask quilt
For being placed between painting cloth base material and high-energy flashlamp, to conduct electricity during a step annealing and Patternized technique
Pattern is produced on film.In the case of there is physical mask, after high-energy flashlamp exposes, in described coating
Corresponding pattern is formed on base material.Regions of those exposures become conduction, and other sheltered by physical mask
Region becomes non-conductive.A step annealing and Patternized technique by the present invention can be formed the most invisible
Pattern, it is to avoid those conventional methods being known in the art etch any heat on the conducting film caused
Destroy or chemical depletion.
The second aspect of the invention relates to the conducting film prepared by the method for the present invention.The conducting film of the present invention
Mainly include base material and the coating containing multiple nano materials.The nano material of the present invention is nano silver wire.This
The nano wire of invention can be linear, granular, spherical or cylinder.Exemplary embodiment party
Case is linear, and length is about 10-15 μm and diameter about 70nm, or draw ratio is more than 150.More excellent
Selection of land, draw ratio is more than 200.
Accompanying drawing explanation
Fig. 1: the photo shot under an optical microscope, depicts and is cut into 12 pieces according to square net
With further through the painting cloth base material of high-energy flashlamp exposure.
Fig. 2: the absorbance (%) of the conducting film of photocuring front and rear under high-energy flashlamp.
Fig. 3: schematic diagram describe how on described conducting film use high-energy flashlamp realize a step annealing and
Patternized technique: 3a (left figure) shows and physical mask 302 is placed in high-energy flashlamp 301 and conducting film
Example between 303；3b (right figure) is shown and is made on conducting film by a step annealing and Patternized technique
The size of standby pattern 304.
Fig. 4: the conductivity crossing mask border measured by conducting atomic force microscopy (c-AFM) is changed.
Fig. 5: utilize the thin layer between the exposed region at conducting film and the non exposed region of 4 point probes measurements
Resistance (Rs).
Fig. 6: the SEM image (upper figure) through the inclination of the nano silver wire of photocuring does not dodges with at high energy
Through the SEM image (figure below) of inclination of nano silver wire of photocuring under the exposure of light modulation.
Detailed description of the invention
(A) cleaning of base material before coating
The preferred base material of applied nano material is polyethylene terephthalate (PET) plate.It is being coated with
Before cloth nano material, make PET sheet through cleaning procedure as herein described: (i) uses cleaning agent wiping PET sheet；
(ii) deionized water rinsing PET sheet is used；(iii) acetone rinsing PET sheet is used；(iv) it is dried in the baking box of 70 DEG C
PET sheet about 5 minutes；V PET sheet is immersed in the isopropanol of boiling about 10 minutes by ()；(vi) by PET
Plate rinses with fresh isopropanol；(vii) in the baking box of 70 DEG C, it is dried PET sheet about 15 minutes.Also
Can be according at Adv.Mater.2011, the method described in 23,2905-2910 cleans the base material of the present invention,
The disclosure of which is incorporated herein by.
(B) preparation of cloth base material it is coated with
First 10g/L nano silver wire is dissolved in 90%v/v isopropanol/alcohol solvent with preparation containing silver nanoparticle
The ink of line.Then with apparatus for coating, the ink containing nano silver wire is applied on PET sheet.A reality
Executing in scheme, described apparatus for coating is Meyer (Mayer) rod coater.The rod of Meyer rod is sized to
Coating weight change as required.Each rod size has the rod number specified, such as rod 4-20.Rod 4-20
Can be used in the present invention.More specifically, use rod 4-10.In exemplary embodiment, use advanced in years
Rod number 4 is the coating ink containing nano silver wire on base material.In preferred embodiments, Meyer is used
Described ink is coated on base material at 34 DEG C by rod number 4.Mobile interpolation ink along with Meyer rod.One
In individual embodiment, the mobile holding 120cm per minute of Meyer rod.Under the auxiliary of syringe pump, at base material
The speed of upper ink is controlled and maintained under the constant rate of speed of about 2-5ml/min.Actual speed rate is limited by
The size of base material.Other conventional coating techniques, such as spraying or intaglio printing can also be used, if its energy
Enough generations and equal in quality of the present invention and the painting cloth base material of quantity.Ink containing nano silver wire is being coated on
After on base material, then the base material of coating is dried about 5 minutes in the baking box of 70 DEG C.Then at optical microphotograph
Microscopic observation dried painting cloth base material.It is divided into less block to enter one with square net by being coated with cloth base material
Step processes (as shown in Figure 1).Described further process includes but not limited to photocuring, annealing and/or optical masking.
In an exemplary embodiment, by making the cloth base material that is coated with cutting into smaller piece pass through sintering system based on xenon,
Carry out photocuring, annealing and photoetching in a single step.
(C) step annealing on conducting film and patterning
Use high energy, air cooling flash lamp to provide high energy pulse in the present invention.Exemplary embodiment party
In case, use high energy xenon lamp to provide the broad-spectrum light of 240nm to 1000nm.Further preferred embodiment makes
Spectrum by the narrower range of 370nm to 1000nm.The average power density being exposed to painting cloth base material is about
10W/cm2.The pulsation rate of the flash of light that described flash lamp produces is 2 pulses the most per second, or more specifically pulse
Persistent period is about 0.52ms.Peak power density during each pulse is about the 1000 of average power density
Times.The continuous light source of identical high-caliber power density can be produced as the present invention it is optionally possible to use
High-energy flashlamp.
After high-energy flashlamp exposes, measure conducting film absorbance and with not through the conduction of exposure of flash lamp
The absorbance of film compares.Fig. 2 shows compared with the conducting film not having exposure, through exposure of flash lamp about 1-120
The conducting film of second has identical transmittance percentage changing pattern, and (absorbance is at wavelength 320nm to 800nm
Optical transport under measure).It is shown that exposure to flash lamp and does not affect the absorbance of conducting film.
Fig. 3 a and 3b is the schematic diagram how carrying out annealing and patterning while using high-energy flashlamp.
In fig. 3 a, physical mask 302 along light transmission route between flash lamp 301 and conducting film 303.
Physical mask can be different on shape, pattern, size and thickness.The material of physical mask includes but does not limits
In glass or metal.Fig. 3 b is the example of the pattern 304 on film, and this pattern is corresponding corresponding to physical mask
Pattern.In this example embodiment, physical mask is used for sheltering film to produce on conducting film under the exposure of flash lamp
The raw pattern 304 with substantially the same size and shape, physical mask has by a long 10mm and width
Two big pads that the fillet of 2mm connects.The average power density used in this example embodiment is 10W/cm2。
Sheet resistance (Rs) about 15 Ω/ through the conducting film of exposure of flash lamp.As shown in Figure 2, lead after exposure
The percentage transmittance of electrolemma is (light transmission measurement based on 400-800nm, and deduct PET base more than 80%
Material back end).
(D) judge that electric conductivity changes by conducting atomic force microscopy
In order to confirm the change of the electric conductivity of conducting film, use conducting atomic force microscopy (c-AFM), and
Changing shown in Figure 4 by the electric conductivity of the electric current by c-AFM probe, described c-AFM probe is from conduction
The unshielded region of film arrives the masking regional of conducting film through mask border.The region table of shade in Fig. 4
Showing and sheltering the transition region 401 of edge, the electric conductivity of film significantly changes herein.The bias of 2V is applied
So that electric current conducts to conducting film from probe on c-AFM probe.Result shows when c-AFM probe passes
When sheltering transition region 401 (i.e. the shadow region in Fig. 4) on border, the electric current of measurement is remarkably decreased.Work as survey
When measuring the electric current through c-AFM probe, obtain the c-AFM image of a series of scannings through mask border.
The distance of every 100 μm of route moved along c-AFM probe obtains 2 μ m 2 μm scanograms.According to
The number of acquired image, estimates that the distance of transition region 401 is about 200 μm.Terms used herein " mistake
Cross district " it is defined as the region at mask border, when above mask is placed in film so that be exposed to flash of light
Forming the conductive region of correspondence on the film of lamp, wherein conducting film becomes nonconductive regions from conduction region.
(E) according to the quantitatively characterizing of the electric conductivity of 4 point probe methods:
In order to provide the quantitatively characterizing of electric conductivity to pattered region on the conducting film after exposure of flash lamp, I
Employ the scanning reading of 4 detecting probe method record every 0.5mm region sheet resistance (Rs).Fig. 5 shows
Show Rs reading between (or unshielded) region exposed and unexposed (or sheltering) region
Significant difference.Shadow region in Figure 5 represents mask border or the transition region as alleged by Fig. 4 401.
When 4 probes from (or unshielded) region exposed along mask border to unexposed (or sheltering)
When region is moved, Rs reading dramatically increases (minimum and add almost 1000 times between high scale).
It is (unmasked to exposed by exposure of flash lamp that Rs reading the most significantly increases the electric conductivity disclosing film
) region carries out photocuring and significantly improve.
(F) Morphological Characterization of conducting film:
The form of conducting film is observed under scanning electron microscope (SEM).Fig. 6 a shows and is coated on base material
But not with after the most mutually pile up through the nano silver wire of exposure of flash lamp.These nano wires are insulated
Polyvinylpyrrolidone (PVP) residue around and contact point between described nano wire form high knot electricity
Resistance.On the other hand, it is coated on base material and is subsequently exposed to the nano silver wire of high-energy flashlamp of the present invention
Create more complete nano wire networking as shown in Figure 6 b.Nano wire quilt after high-energy flashlamp exposes
Fuse together the structure forming network sample.Interior-heat between the nano wire that exposure of flash lamp produces is substantially reduced
Junction resistance so that (or unshielded) region of exposure becomes more to conduct electricity than the film using conventional method.
The PVP residue of the insulation in film is by the high-energy flashlamp of present invention photocuring simultaneously.Therefore, in the present invention
Need not extra heat cure or etching step.
It is possible if desired to different order and/or carry out difference in functionality discussed herein simultaneously with each other.Separately
Outward, if it is desired, one or more above-mentioned function can be optional or can be combined.
Although describing the different aspect of the present invention in the independent claim, the other side of the present invention includes
Other groups of feature from feature and the independent claims of described embodiment and/or dependent claims
Close, and be not only the combination being expressly recited in the claims.
Although being also noted that the exemplary being explained above the present invention in this article, these explanations
Should not regard determinate implication as.On the contrary, multiple change can be carried out and change without departing from such as institute
The scope of the present invention that attached claim is limited.
Industrial applicibility
Method disclosed by the invention can be used for preparing the thin film of contact panel and other display, because by making
The number of steps producing high energy pulse with high-energy flashlamp as source and reduce can the cost-effective and time.?
The heat cure or the chemosetting that are avoided by etching in post processing also are able to keep the structure of nano wire and improve thin
The electric conductivity of film.The pattern generated by the method for the present invention matches with film substrate not using to have
In the case of the material of predetermined refractive index the most invisible.
Claims (22)
1. the method preparing transparent conducting film based on nano material, including
A () cleaning is as the base material of conducting film carrier；
B () provides the ink containing nano material；
C () is coated with the described ink containing nano material on the substrate and is coated with cloth base material to be formed；
D () shelters described coating base material by physical mask in one or more desired region；
E described painting cloth base material is exposed to high-energy flashlamp source and with annealing and patterns described painting cloth base material by (), thus when described conducting film solidifies under described high-energy flashlamp source, formed and have figuratum conducting film；
Wherein said nano material is nano wire based on silver, and described nano wire is linear.
A kind of method preparing transparent conducting film based on nano material, the draw ratio of wherein said nano wire is more than 150.
A kind of method preparing transparent conducting film based on nano material, a length of 10-15 μm of wherein said nano wire, diameter is about 70nm.
A kind of method preparing transparent conducting film based on nano material, wherein said base material is polyethylene terephthalate.
A kind of method preparing transparent conducting film based on nano material, wherein said cleaning comprises the following steps:
A () uses base material described in cleaning agent wiping；
B () uses base material described in deionized water rinsing；
C () uses base material described in acetone rinsing；
D () is dried described base material about 5 minutes at 70 DEG C；
E described base material is immersed in the isopropanol of boiling about 10 minutes by ()；
F described base material is rinsed by () with fresh isopropanol；With
G () is dried described base material about 5 minutes at 70 DEG C.
A kind of method preparing transparent conducting film based on nano material, wherein said nano wire based on silver is multiple nano wires based on silver, and the described ink containing nano material also comprises the solvent of about 90%v/v isopropanol/ethanol.
A kind of method preparing transparent conducting film based on nano material, wherein said multiple nano wires based on silver are dissolved in described solvent with concentration 10g/L.
A kind of method preparing transparent conducting film based on nano material, wherein said coating is carried out by having the apparatus for coating of Meyer rod.
A kind of method preparing transparent conducting film based on nano material, wherein said Meyer rod is No. 4 Meyer rods.
A kind of method preparing transparent conducting film based on nano material, wherein said being coated at about 34 DEG C is carried out.
A kind of 11. methods preparing transparent conducting film based on nano material, with the help of wherein said coating further includes at syringe pump, with described in the mobile interpolation of Meyer rod containing the ink of nano material, adding rate is 2-5ml/min or adding rate is proportional to the size of base material.
A kind of 12. methods preparing transparent conducting film based on nano material, the movement of wherein said Meyer rod is controlled and maintained at the constant speed of 120cm the most per minute.
A kind of 13. methods preparing transparent conducting film based on nano material, wherein said coating further includes at before physical mask is supplied to described painting cloth base material, at about 70 DEG C, it is dried described painting cloth base material about 5 minutes, then described painting cloth base material is divided into less block.
A kind of 14. methods preparing transparent conducting film based on nano material, wherein said physical mask has the pattern corresponding to described desired region, in described desired region, when described physical mask along horizontal level between described high-energy flashlamp source and described painting cloth base material time, the high energy optical pulses produced from described high-energy flashlamp source is sheltered by described physical mask, it is non-conductive for making described desired region, and other region do not sheltered by described physical mask is conduction.
A kind of 15. methods preparing transparent conducting film based on nano material, wherein said high-energy flashlamp source is to produce the wavelength flash lamp based on xenon from 240nm to 1000nm light.
A kind of 16. methods preparing transparent conducting film based on nano material, wherein said light has the wavelength of 370nm to 1000nm.
A kind of 17. methods preparing transparent conducting film based on nano material, wherein said painting cloth base material is exposed to the about 1-120 second under described high-energy flashlamp source, and wherein average power density is about 10W/cm2, pulsation rate is 2 pulses per second, or the pulse duration is about 0.52ms.
A kind of 18. methods preparing transparent conducting film based on nano material, wherein said high-energy flashlamp source produces peak power density during each pulse, and it is about 1000 times of average power density.
Nesa coating prepared by 19. 1 kinds of methods according to claim 1.
20. nesa coatings as claimed in claim 19, wherein said nesa coating has the sheet resistance of about 15 Ω/ and the absorbance more than 80%.
21. nesa coatings as claimed in claim 19, wherein said nesa coating has the border around described desired region of width about 200 μm.
22. nesa coatings as claimed in claim 19, nano material in other region of the described nesa coating wherein do not sheltered by described physical mask after described exposure forms the nanometer line network of the junction resistance with reduction, and other polymer residue in same area is by photocuring, making described nesa coating have the most sightless pattern, described pattern is corresponding to described desired region and does not has masked region.
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| US10470301B2 (en) | 2013-04-26 | 2019-11-05 | Showa Denko K.K. | Method for manufacturing conductive pattern and conductive pattern formed substrate |
| US10088931B2 (en) * | 2015-11-16 | 2018-10-02 | Samsung Electronics Co., Ltd. | Silver nanowires, production methods thereof, conductors and electronic devices including the same |
| KR101913282B1 (en) * | 2017-12-29 | 2018-10-30 | (주)아이테드 | Fabrication method of transparent electorde |
| CN109493734B (en) * | 2018-10-26 | 2020-09-08 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of pixel electrode and display panel |
| CN109585057B (en) * | 2018-12-17 | 2020-02-04 | 太原理工大学 | Flexible transparent conductive film based on layer-by-layer assembled self-supporting film and preparation method thereof |
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| CN101292362A (en) * | 2005-08-12 | 2008-10-22 | 凯博瑞奥斯技术公司 | Nanowires-based transparent conductors |
| CN102087886A (en) * | 2009-12-08 | 2011-06-08 | 中国科学院福建物质结构研究所 | Silver nanowire-based transparent conductive thin film and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10231344B2 (en) * | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
| WO2011109114A2 (en) * | 2010-03-05 | 2011-09-09 | Carestream Health, Inc. | Transparent conductive films, articles, and methods |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101292362A (en) * | 2005-08-12 | 2008-10-22 | 凯博瑞奥斯技术公司 | Nanowires-based transparent conductors |
| CN102087886A (en) * | 2009-12-08 | 2011-06-08 | 中国科学院福建物质结构研究所 | Silver nanowire-based transparent conductive thin film and preparation method thereof |
| CN102311681A (en) * | 2011-08-25 | 2012-01-11 | 浙江科创新材料科技有限公司 | UV curing silver nanowire ink and its preparation method and application method |
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