CN103724622A - Preparation method for potassium-sodium niobate/polyimide high dielectric thin film - Google Patents
Preparation method for potassium-sodium niobate/polyimide high dielectric thin film Download PDFInfo
- Publication number
- CN103724622A CN103724622A CN201310653545.8A CN201310653545A CN103724622A CN 103724622 A CN103724622 A CN 103724622A CN 201310653545 A CN201310653545 A CN 201310653545A CN 103724622 A CN103724622 A CN 103724622A
- Authority
- CN
- China
- Prior art keywords
- potassium
- thin film
- sodium niobate
- high dielectric
- dielectric thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a preparation method for a potassium-sodium niobate/polyimide high dielectric thin film, relates to a preparation method for a potassium-sodium niobate/ polyimide high dielectric thin film, and aims to solve the problems that an existing high dielectric polymer-ceramic composite thin film is relative poor in dielectric combination property, and fails to meet the requirements on a high dielectric flexible thin film in the field of micro electronics. The preparation method comprises the following steps: 1,weighing a raw material; 2, drying the raw material; 3, preparing a mixed solution A; 4, preparing a mixed solution B; 5, preparing a polyamic acid solution; 6, preparing a glass plate after imidization is realized; 7, demoulding and shaping to obtain the thin film. The potassium-sodium niobate/polyimide high dielectric thin film prepared by the invention has an excellent dielectric combination property, and can meet the requirements on the high dielectric flexible thin film in the field of the micro electronics. The preparation method provided by the invention can be used in the technical field of inorganic/organic composite material preparation.
Description
Technical field
The present invention relates to a kind of preparation method of potassium-sodium niobate/polyimide high dielectric thin film.
Background technology
In dielectric materials field, along with making rapid progress of electronics development in recent years, widely used electrical condenser is to high energy storage, miniaturization and environmentally friendly future development.Exploitation has good dielectric properties, has again higher force simultaneously and learns the focus that the matrix material of the dielectric materials, particularly organic medium of intensity and processability becomes research.
Generally speaking, single component material is difficult to have good dielectric properties and mechanical property simultaneously.Large heteropolymer is good insulating body, and has workability, advantage that mechanical strength is high, but specific inductivity generally (being 2～10 under room temperature conventionally) on the low side, only minority straight polymer material dielectric constant surpasses 10.Although inorganic ceramic has very high specific inductivity (up to 2000), but have that fragility is large, processing temperature is high and with many drawbacks such as current unicircuit processing technology consistency is poor.Therefore, the development of high dielectric polymer-ceramic composite becomes a kind of main solution route, and the maximum dielectric constant of existing CCTO/PI composite membrane is 49, and maximum loss angle is just being cut to 0.19, and maximum conductivity is 10
-7s m
-1; BaTiO
3the maximum dielectric constant of/PI composite membrane is 18, and maximum loss angle is just being cut to 0.01, and maximum conductivity is 10
-8s m
-1; Hence one can see that, and existing high dielectric polymer-ceramic composite film can not have high-k and low-loss concurrently simultaneously, and dielectric over-all properties is poor, can not meet the demand of the high dielectric fexible film of microelectronic.
Summary of the invention
The dielectric over-all properties that the object of the invention is to solve existing high dielectric polymer-ceramic composite film is poor, can not meet the problem of the high dielectric fexible film of microelectronic demand, a kind of preparation method of potassium-sodium niobate/polyimide high dielectric thin film is provided.
The preparation method of a kind of potassium-sodium niobate/polyimide of the present invention high dielectric thin film, is undertaken by following steps:
One, the standard that is 5～40% by the volume fraction of potassium-sodium niobate in potassium-sodium niobate/polyimide high dielectric thin film weighs 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate;
Two, 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate step 1 being taken is to dry 22～26h under the condition of 120 ℃ in temperature;
Three, in N,N-dimethylacetamide, add in 4,4 '-diaminodiphenyl oxide after step 2 is dried, be stirred to 4,4 '-diaminodiphenyl oxide and dissolve, obtain mixed solution A;
The potassium-sodium niobate of four, step 2 being dried joins in mixed solution A, and ultrasonic 20～40min, obtains mixing solutions B;
The pyromellitic dianhydride of five, step 2 being dried is divided into six parts, then joins successively in mixing solutions B, stirs 6～10min after often adding a pyromellitic dianhydride, add after the 6th part of pyromellitic dianhydride, continue to stir 2h, then standing 12h, obtains polyamic acid solution;
Six, with automatic spray device, polyamic acid solution is scraped uniformly on sheet glass, then put into baking oven, under the condition of 80 ℃, heat 1h, then under the condition of 100 ℃, heat 1h, under the condition of 200 ℃, heat 1h again, then under the condition of 300 ℃, heat 1h, then heat 1h under the condition of 330 ℃, obtain the sheet glass after imidization;
Seven, the sheet glass after imidization is put into distilled water and soak 25～35min, then film is taken off, with distilled water, acetone, ethanol, clean successively again, then dry, obtain potassium-sodium niobate/polyimide high dielectric thin film, complete the preparation of potassium-sodium niobate/polyimide high dielectric thin film, the standard that wherein in step 3, N,N-dimethylacetamide is 11% by solid content in polyamic acid solution measures.
The present invention adopts has ABO
3potassium-sodium niobate (the K of type perovskite structure
0.5na
0.5) NbO
3(being called for short KNN) prepares laminated film with polyimide (PI), on the basis of traditional situ aggregation method, utilizes ultrasonic wave to disperse to prepare the high dielectric laminated film of the KNN/PI being evenly distributed, as a kind of new high energy storage material.The test result of scanning electronic microscope, X-ray diffraction, dielectric properties shows, KNN particle is evenly distributed, stablizes in polyimide, the specific inductivity of potassium-sodium niobate/polyimide high dielectric thin film is 22,5 times more than of pure Kapton, higher than BaTiO3/PI composite membrane, meanwhile, its loss is 0.04, than the laminated film of CaCu 3 Ti 4 O-polyimide, the value of CCTO/PI composite membrane is little.And the specific conductivity of potassium-sodium niobate/polyimide high dielectric thin film is very little, be only 10
-8, show that its insulating property are good.More visible, the dielectric excellent combination property of potassium-sodium niobate/polyimide high dielectric thin film of the present invention, can meet the demand of the high dielectric fexible film of microelectronic.
Accompanying drawing explanation
Fig. 1 is potassium-sodium niobate/polyimide high dielectric thin film of this test preparation, KNN/PI composite membrane that KNN volume content is 5%, KNN/PI composite membrane that KNN volume content is 10% and the X-ray diffractogram of pure PI film; Wherein a is that potassium-sodium niobate/polyimide high dielectric thin film, the b of this test preparation are that KNN volume content is that 10% KNN/PI composite membrane, c are that KNN volume content is that 5% KNN/PI composite membrane, d are that pure PI film, e are KNN;
Fig. 2 is the surface topography of potassium-sodium niobate/polyimide high dielectric thin film of this test preparation;
Fig. 3 is the cross-section morphology of potassium-sodium niobate/polyimide high dielectric thin film of this test preparation;
Fig. 4 is the affect figure of the different KNN volume fraction of this test on the specific inductivity of potassium-sodium niobate/polyimide high dielectric thin film and loss tangent; Wherein a is the curve that specific inductivity changes with volume fraction, and b is the curve that loss tangent changes with volume fraction;
Fig. 5 is potassium-sodium niobate/polyimide high dielectric thin film and the specific inductivity of pure PI film and the graph of a relation of frequency of this test preparation; Wherein a is potassium-sodium niobate/polyimide high dielectric thin film of this test preparation, and b is pure PI film;
Fig. 6 is potassium-sodium niobate/polyimide high dielectric thin film and the loss tangent of pure PI film and the graph of a relation of frequency of this test preparation; Wherein a is potassium-sodium niobate/polyimide high dielectric thin film of this test preparation, and b is pure PI film;
Potassium-sodium niobate/polyimide high dielectric thin film that Fig. 7 is this test preparation and the electricity of pure PI film are led the graph of a relation with frequency; Wherein a is potassium-sodium niobate/polyimide high dielectric thin film of this test preparation, and b is pure PI film.
Embodiment
Embodiment one: the preparation method of a kind of potassium-sodium niobate/polyimide of present embodiment high dielectric thin film, is undertaken by following steps:
One, the standard that is 5～40% by the volume fraction of potassium-sodium niobate in potassium-sodium niobate/polyimide high dielectric thin film weighs 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate;
Two, 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate step 1 being taken is to dry 22～26h under the condition of 120 ℃ in temperature;
Three, in N,N-dimethylacetamide, add in 4,4 '-diaminodiphenyl oxide after step 2 is dried, be stirred to 4,4 '-diaminodiphenyl oxide and dissolve, obtain mixed solution A;
The potassium-sodium niobate of four, step 2 being dried joins in mixed solution A, and ultrasonic 20～40min, obtains mixing solutions B;
The pyromellitic dianhydride of five, step 2 being dried is divided into six parts, then joins successively in mixing solutions B, stirs 6～10min after often adding a pyromellitic dianhydride, add after the 6th part of pyromellitic dianhydride, continue to stir 2h, then standing 12h, obtains polyamic acid solution;
Six, with automatic spray device, polyamic acid solution is scraped uniformly on sheet glass, then put into baking oven, under the condition of 80 ℃, heat 1h, then under the condition of 100 ℃, heat 1h, under the condition of 200 ℃, heat 1h again, then under the condition of 300 ℃, heat 1h, then heat 1h under the condition of 330 ℃, obtain the sheet glass after imidization;
Seven, the sheet glass after imidization is put into distilled water and soak 25～35min, then film is taken off, with distilled water, acetone, ethanol, clean successively again, then dry, obtain potassium-sodium niobate/polyimide high dielectric thin film, complete the preparation of potassium-sodium niobate/polyimide high dielectric thin film, the standard that wherein in step 3, N,N-dimethylacetamide is 11% by solid content in polyamic acid solution measures.
"/" in present embodiment mean " with " relation, represent that potassium-sodium niobate and polyimide are combined with each other.
Present embodiment adopts has ABO
3potassium-sodium niobate (the K of type perovskite structure
0.5na
0.5) NbO
3(being called for short KNN) prepares laminated film with polyimide, on the basis of traditional situ aggregation method, utilizes ultrasonic wave to disperse to prepare the high dielectric laminated film of the KNN/PI being evenly distributed, as a kind of new high energy storage material.The test result of scanning electronic microscope, X-ray diffraction, dielectric properties shows, KNN particle is evenly distributed, stablizes in polyimide, the specific inductivity of potassium-sodium niobate/polyimide high dielectric thin film is 22,5 times more than of pure Kapton, higher than BaTiO3/PI composite membrane, meanwhile, its loss is 0.04, than the laminated film of CaCu 3 Ti 4 O-polyimide, the value of CCTO/PI composite membrane is little.And the specific conductivity of potassium-sodium niobate/polyimide high dielectric thin film is very little, be only 10
-8s m
-1, show that its insulating property are good.More visible, the dielectric excellent combination property of potassium-sodium niobate/polyimide high dielectric thin film of present embodiment, can meet the demand of the high dielectric fexible film of microelectronic.
Embodiment two: present embodiment is different from embodiment one is to dry 24h described in step 2 under temperature is the condition of 120 ℃.Other steps and parameter are identical with embodiment one.
Embodiment three: what present embodiment was different from embodiment one or two is that the ultrasonic frequency described in step 4 is 59KHz.Other steps and parameter are identical with embodiment one or two.
Embodiment four: what present embodiment was different from one of embodiment one to three is that the ultrasonic ultrasonic time described in step 4 is 30min.Other steps and parameter are identical with one of embodiment one to three.
Embodiment five: present embodiment is different from one of embodiment one to four be described in step 5 often add a pyromellitic dianhydride after stir 8min.Other steps and parameter are identical with one of embodiment one to four.
Embodiment six: present embodiment is different from one of embodiment one to five is that the sheet glass by after imidization described in step 7 is put into distilled water and soaked 30min.Other steps and parameter are identical with one of embodiment one to five.
Embodiment seven: present embodiment is different from one of embodiment one to six is that the bake out temperature of the oven dry described in step 7 is 80 ℃, and drying time is 8～10min.Other steps and parameter are identical with one of embodiment one to six.
By following verification experimental verification beneficial effect of the present invention:
Test 1: this tests a kind of preparation method of potassium-sodium niobate/polyimide high dielectric thin film, by following steps, undertaken: the standard that is, 40% by the volume fraction of potassium-sodium niobate in potassium-sodium niobate/polyimide high dielectric thin film weighs 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate; Two, 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate step 1 being taken is to dry 24h under the condition of 120 ℃ in temperature; Three, in N,N-dimethylacetamide, add in 4,4 '-diaminodiphenyl oxide after step 2 is dried, be stirred to 4,4 '-diaminodiphenyl oxide and dissolve, obtain mixed solution A, the standard that wherein N,N-dimethylacetamide is 11% by solid content in mixing solutions measures; The potassium-sodium niobate of four, step 2 being dried joins in mixed solution A, and ultrasonic 30min, obtains mixing solutions B; The pyromellitic dianhydride of five, step 2 being dried is divided into six parts, then joins successively in mixing solutions B, stirs 8min after often adding a pyromellitic dianhydride, add after the 6th part of pyromellitic dianhydride, continue to stir 2h, then standing 12h, obtains polyamic acid solution; Six, with automatic spray device, polyamic acid solution is scraped uniformly on sheet glass, then put into baking oven, under the condition of 80 ℃, heat 1h, then under the condition of 100 ℃, heat 1h, under the condition of 200 ℃, heat 1h again, then under the condition of 300 ℃, heat 1h, then heat 1h under the condition of 330 ℃, obtain the sheet glass after imidization; Seven, the sheet glass after imidization is put into distilled water and soak 30min, then film is taken off, with distilled water, acetone, ethanol, clean successively again, then dry, obtain potassium-sodium niobate/polyimide high dielectric thin film, complete the preparation of potassium-sodium niobate/polyimide high dielectric thin film, the bake out temperature of wherein drying is 80 ℃, and drying time is 10min.
For the impact on pure Kapton structure after definite KNN doping, potassium-sodium niobate/polyimide high dielectric thin film to this test preparation, KNN volume content is 5% KNN/PI composite membrane, KNN volume content is that 10% KNN/PI composite membrane and pure PI film have carried out X-ray diffraction analysis (XRD), result as shown in Figure 1, as can see from Figure 1, pure PI film has a broad peak during in 2 θ=15～25 °, after increase along with KNN doping content, imine matrix local order structure destroyed, make this broad peak in KNN/PI film weaken gradually and finally disappear.Yet, for different KNN/PI composite membranes, can see all the time the ABO of KNN particle
3uhligite quadrature phase character peak, this shows that KNN particle is very stable in PI matrix, structure does not have destroyed.
For the deployment conditions of basic definite KNN particle in PI matrix, pattern to potassium-sodium niobate/polyimide high dielectric thin film of this test preparation has carried out scanning electron microscope analysis (SEM), as shown in Figures 2 and 3, by Fig. 2, can be observed, KNN particle, in being evenly distributed on imine matrix, does not have obvious agglomeration substantially.In addition, by sectional drawing 3, also can clearly be observed, KNN particle surrounding is all surrounded by imines.In a word, Fig. 2 and Fig. 3 illustrate KNN particle favorable dispersity in potassium-sodium niobate/polyimide high dielectric thin film of this test preparation.
Test different KNN volume fractions on the specific inductivity of potassium-sodium niobate/polyimide high dielectric thin film and loss tangent affect figure as shown in Figure 4, as shown in Figure 4, along with the increase of KNN content, the specific inductivity of KNN/PI composite membrane has had obvious increase.Although its loss is also corresponding becomes large to some extent, loss angle maximum value is also still much smaller than 0.05.Consider, the KNN/PI composite membrane dielectric properties that volume fraction is 40% are optimum.
Specific inductivity and loss angle to potassium-sodium niobate/polyimide high dielectric thin film of this test preparation are measured, result is as shown in Fig. 5,6 and 7, as can be seen from Figure 5, the specific inductivity of potassium-sodium niobate/polyimide high dielectric thin film of this test preparation has had and has significantly improved, 10
2during Hz, specific inductivity is about 22.5, is 5 times more than of pure PI film.Known in Fig. 6, the loss of potassium-sodium niobate/polyimide high dielectric thin film of this test preparation is also large than pure PI film, but 10
2during Hz less than 0.04.Same, Fig. 6 show the electricity of potassium-sodium niobate/polyimide high dielectric thin film of this test preparation lead also large than pure PI film, still 10
2hz is still lower than 10
-8s m
-1, the excellent insulation performance of potassium-sodium niobate/polyimide high dielectric thin film of this test preparation is described.In sum, potassium-sodium niobate/polyimide high dielectric thin film specific inductivity of this test preparation is high, and good insulation preformance, has very important significance for the application in high dielectric, energy storage material field.
Claims (7)
1. a preparation method for potassium-sodium niobate/polyimide high dielectric thin film, is characterized in that the preparation method of potassium-sodium niobate/polyimide high dielectric thin film is undertaken by following steps:
One, the standard that is 5～40% by the volume fraction of potassium-sodium niobate in potassium-sodium niobate/polyimide high dielectric thin film weighs 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate;
Two, 4,4 '-diaminodiphenyl oxide, pyromellitic dianhydride and potassium-sodium niobate step 1 being taken is to dry 22～26h under the condition of 120 ℃ in temperature;
Three, in N,N-dimethylacetamide, add in 4,4 '-diaminodiphenyl oxide after step 2 is dried, be stirred to 4,4 '-diaminodiphenyl oxide and dissolve, obtain mixed solution A;
The potassium-sodium niobate of four, step 2 being dried joins in mixed solution A, and ultrasonic 20～40min, obtains mixing solutions B;
The pyromellitic dianhydride of five, step 2 being dried is divided into six parts, then joins successively in mixing solutions B, stirs 6～10min after often adding a pyromellitic dianhydride, add after the 6th part of pyromellitic dianhydride, continue to stir 2h, then standing 12h, obtains polyamic acid solution;
Six, with automatic spray device, polyamic acid solution is scraped uniformly on sheet glass, then put into baking oven, under the condition of 80 ℃, heat 1h, then under the condition of 100 ℃, heat 1h, under the condition of 200 ℃, heat 1h again, then under the condition of 300 ℃, heat 1h, then heat 1h under the condition of 330 ℃, obtain the sheet glass after imidization;
Seven, the sheet glass after imidization is put into distilled water and soak 25～35min, then film is taken off, with distilled water, acetone, ethanol, clean successively again, then dry, obtain potassium-sodium niobate/polyimide high dielectric thin film, complete the preparation of potassium-sodium niobate/polyimide high dielectric thin film, the standard that wherein in step 3, N,N-dimethylacetamide is 11% by solid content in polyamic acid solution measures.
2. the preparation method of a kind of potassium-sodium niobate/polyimide high dielectric thin film according to claim 1, is characterized in that under temperature is the condition of 120 ℃, drying 24h described in step 2.
3. the preparation method of a kind of potassium-sodium niobate/polyimide high dielectric thin film according to claim 1, is characterized in that the ultrasonic frequency described in step 4 is 59KHz.
4. the preparation method of a kind of potassium-sodium niobate/polyimide high dielectric thin film according to claim 1, is characterized in that the ultrasonic ultrasonic time described in step 4 is 30min.
5. the preparation method of a kind of potassium-sodium niobate/polyimide high dielectric thin film according to claim 1, it is characterized in that described in step 5 often add a pyromellitic dianhydride after stir 8min.
6. the preparation method of a kind of potassium-sodium niobate/polyimide high dielectric thin film according to claim 1, is characterized in that the sheet glass by after imidization described in step 7 puts into distilled water and soak 30min.
7. the preparation method of a kind of potassium-sodium niobate/polyimide high dielectric thin film according to claim 1, the bake out temperature that it is characterized in that the oven dry described in step 7 is 80 ℃, drying time is 8～10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310653545.8A CN103724622B (en) | 2013-12-06 | 2013-12-06 | A kind of preparation method of potassium-sodium niobate/polyimide high dielectric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310653545.8A CN103724622B (en) | 2013-12-06 | 2013-12-06 | A kind of preparation method of potassium-sodium niobate/polyimide high dielectric thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103724622A true CN103724622A (en) | 2014-04-16 |
| CN103724622B CN103724622B (en) | 2016-02-03 |
Family
ID=50448939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310653545.8A Expired - Fee Related CN103724622B (en) | 2013-12-06 | 2013-12-06 | A kind of preparation method of potassium-sodium niobate/polyimide high dielectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103724622B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104356414A (en) * | 2014-11-19 | 2015-02-18 | 哈尔滨理工大学 | Preparation method of potassium sodium niobate/polyvinylidene fluoride high-dielectric film |
| CN105440284A (en) * | 2015-12-11 | 2016-03-30 | 中国航空工业集团公司北京航空材料研究院 | Preparation method for colorless transparent high-temperature-resistant polyimide nanometer composite film |
| CN111405750A (en) * | 2020-04-13 | 2020-07-10 | 南京鑫达泰科技有限公司 | Polyimide buries holds printed circuit |
| CN111875798A (en) * | 2020-08-01 | 2020-11-03 | 江西师范大学 | High dielectric constant CsPbX3rGO/polyimide composite membrane and preparation method thereof |
| CN113773541A (en) * | 2021-10-08 | 2021-12-10 | 哈尔滨理工大学 | Preparation method of KTN/PI composite film with high breakdown and low dielectric loss |
-
2013
- 2013-12-06 CN CN201310653545.8A patent/CN103724622B/en not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| JIAQI LIN等: ""Effect of K0.5Na0.5NbO3 filling particles"", 《JOURNAL OF APPLIED POLYMER SCIENCE》, vol. 131, no. 3, 26 August 2013 (2013-08-26) * |
| JIAQI LIN等: ""Fabrication and Ultraviolet Characterization of Potassium Sodium"", 《APPLIED MECHANICS AND MATERIALS》, vol. 395396, 3 September 2013 (2013-09-03), pages 121 - 124 * |
| JIAQI LIN等: ""Novel potassium sodium niobate/polyimide"", 《POLYMER COMPOSITES》, vol. 35, no. 5, 31 October 2013 (2013-10-31), pages 969 - 974 * |
| PANPAN ZHANG等: ""Fabrication and Ultraviolet Characterization of Polyimide Film"", 《ADVANCED MATERIALS RESEARCH》, vol. 821822, 18 September 2013 (2013-09-18), pages 906 - 908 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104356414A (en) * | 2014-11-19 | 2015-02-18 | 哈尔滨理工大学 | Preparation method of potassium sodium niobate/polyvinylidene fluoride high-dielectric film |
| CN104356414B (en) * | 2014-11-19 | 2017-05-31 | 哈尔滨理工大学 | The preparation method of potassium-sodium niobate/polyvinylidene fluoride high dielectric thin film |
| CN105440284A (en) * | 2015-12-11 | 2016-03-30 | 中国航空工业集团公司北京航空材料研究院 | Preparation method for colorless transparent high-temperature-resistant polyimide nanometer composite film |
| CN111405750A (en) * | 2020-04-13 | 2020-07-10 | 南京鑫达泰科技有限公司 | Polyimide buries holds printed circuit |
| CN111875798A (en) * | 2020-08-01 | 2020-11-03 | 江西师范大学 | High dielectric constant CsPbX3rGO/polyimide composite membrane and preparation method thereof |
| CN111875798B (en) * | 2020-08-01 | 2022-11-01 | 江西师范大学 | High dielectric constant CsPbX3rGO/polyimide composite membrane and preparation method thereof |
| CN113773541A (en) * | 2021-10-08 | 2021-12-10 | 哈尔滨理工大学 | Preparation method of KTN/PI composite film with high breakdown and low dielectric loss |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103724622B (en) | 2016-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103724622B (en) | A kind of preparation method of potassium-sodium niobate/polyimide high dielectric thin film | |
| Feng et al. | Ultrahigh discharge efficiency and excellent energy density in oriented core-shell nanofiber-polyetherimide composites | |
| Chi et al. | High energy storage density for poly (vinylidene fluoride) composites by introduced core–shell CaCu3Ti4O12@ Al2O3 nanofibers | |
| Wang et al. | Super-fast fabrication of MXene film through a combination of ion induced gelation and vacuum-assisted filtration | |
| CN104530616B (en) | A kind of high dielectric property low-loss sheet-like barium titanate base/polymer composites and preparation method thereof | |
| CN105038045A (en) | Preparation method for graphene oxide/polyvinylidene fluoride composite film | |
| CN103085385A (en) | Polytetrafluoroethylene substrate and preparation method thereof | |
| CN102173155A (en) | Polymer-base ceramic composite dielectric material and preparation method thereof | |
| CN112898614A (en) | High-dielectric-constant polyimide three-phase composite material and preparation method thereof | |
| Zhang et al. | Interesting influence of different inorganic particles on the energy storage performance of a polyethersulfone-based dielectric composite | |
| CN110105604A (en) | A kind of adjustable crystal type poly(aryl ether ketone) perforated membrane in aperture, preparation method and applications | |
| CN101993536A (en) | Polyimide/graphite hybrid material with high dielectric constant and preparation method thereof | |
| CN101423645A (en) | Dielectric composite material and preparation method thereof | |
| Wang et al. | Flexible and biocompatible polystyrene/multi-walled carbon nanotubes films with high permittivity and low loss | |
| CN114940759A (en) | Fluorine-containing polyimide film, preparation method thereof and supercapacitor | |
| CN105038228A (en) | Polyimide high-dielectric composite film mixed with nano-boron carbide-loaded graphene and used for capacitor and preparation method thereof | |
| CN109401142B (en) | PVDF (polyvinylidene fluoride) based composite material with sea-island structure and preparation method thereof | |
| CN111799106B (en) | Method and device for manufacturing planar capacitor | |
| Sun et al. | Multifunctional epoxy resin/polyacrylonitrile‐lithium trifluoromethanesulfonate composites films with very high transparency, high dielectric permittivity, breakdown strength and mechanical properties | |
| JP2017188378A (en) | Organic conductive film and manufacturing method therefor | |
| CN104356414A (en) | Preparation method of potassium sodium niobate/polyvinylidene fluoride high-dielectric film | |
| Zhao et al. | High Electrical and Mechanical Properties Obtained in a Polyimide‐Based Nanocomposite with Sandwich Structure via Multidimensional Design | |
| CN112094425A (en) | Surface compact type low-dielectric constant porous polyimide composite film and preparation method thereof | |
| CN205491420U (en) | Low intermodulation high -frequency module base plate | |
| CN203680929U (en) | Modified polytetrafluoroethylene copper-clad substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20161206 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |