CN103723731A - Combined silicon carbide chemical vapor deposition device - Google Patents
Combined silicon carbide chemical vapor deposition device Download PDFInfo
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- CN103723731A CN103723731A CN201310142519.9A CN201310142519A CN103723731A CN 103723731 A CN103723731 A CN 103723731A CN 201310142519 A CN201310142519 A CN 201310142519A CN 103723731 A CN103723731 A CN 103723731A
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- silicon carbide
- chemical vapor
- vapor deposition
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- reaktionsofen
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Abstract
The invention discloses a combined silicon carbide chemical vapor deposition device which comprises one, two or three main reaction furnaces 11 used for performing chemical vapor deposition, and an auxiliary reaction furnace 12 used for removing excess methyltrichlorosilane, wherein each main reaction furnace 11 is separately communicated with the auxiliary reaction furnace 12 through a pipeline 13; the auxiliary reaction furnace 12 is directly communicated with a vacuum system 16 and filled with a porous carbon felt 15; the air pressures of the main reaction furnace 11 and the auxiliary reaction furnace 12 are less than 100 Pa during deposition. According to the device, the content of residual methyltrichlorosilane in furnace bodies and pipelines can be greatly reduced; the content of dust particles in vacuum pump oil is reduced, so that the service time of the vacuum pump oil is prolonged and the cost is saved; meanwhile, a prepared silicon carbide coating is good in quality.
Description
Technical field
The present invention relates to a kind of chemical vapor deposition of silicon carbide device, particularly relate to a kind of combined chemistry vapour deposition silicon carbide device, belong to high temperature thermal treatment.
Background technology
Chemical vapor deposition stove is to utilize chemical vapour deposition (Chemical vapor deposition, CVD) principle, gaseous reactant material is heated to certain technological temperature and issues biochemical reaction, thereby generate solid matter in cvd furnace, be deposited on solid matrix surface.Carbofrax material has machinery and the physical and chemical performance of many excellences, as high specific tenacity and specific modulus, low density, high temperature resistant, anti-oxidant, characteristic of semiconductor etc., thereby receives much concern at thermal structure and microelectronic.CVD is a kind of industrialization technology that is applicable to preparing high quality carborundum films.METHYL TRICHLORO SILANE (MTS) has higher vapour pressure, can at lower temperature, deposit, and because the atomic ratio of Si in molecule and C is 1: 1, easily prepare stoichiometric SiC coating.Therefore carrying out CVD method while preparing SiC coating, usually take MTS as precursor, hydrogen (H
2) be prepared for carrier gas.When carrying out CVD SiC coating process, requiring must be very clean in cvd furnace, if cvd furnace has granule dust existence can affect SiC coating quality.
At present, on market, most of CVD stoves are to transform and form on vacuum oven basis, and cvd furnace is directly communicated with vacuum pump.Carrying out, after a SiC coating deposition, usually having part MTS to residue among body of heater and pipeline, MTS is a kind of inflammable, has the toxic substance of combustion explosion danger.Therefore deposit after certain number of times, in pipeline, need frequent cleaning, avoid explosion hazard to occur.Meanwhile, deposition can cause part dust to enter in vacuum pump, pollutes vacuum pump oil, and vacuum pump also needs frequent cleaning.Therefore, in process of production, labor strength improves, and cost is corresponding increase also.
Summary of the invention
Problem to be solved by this invention is to provide a kind of combined chemistry vapour deposition silicon carbide device.
A kind of combined chemistry vapour deposition silicon carbide device, it is characterized in that comprising main reaction stove 11 for carrying out chemical vapour deposition and for eliminating the auxiliary Reaktionsofen 12 of unnecessary trichloromethyl silane, main reaction stove 11 is communicated with by pipeline 13 with auxiliary Reaktionsofen 12, auxiliary Reaktionsofen 12 is directly communicated with vacuum system 16, and during deposition, main reaction stove 11 and auxiliary Reaktionsofen 12 air pressure are all below 100Pa.
Main reaction stove 11 can be one, and two or three, every main reaction stove 11 all and between auxiliary Reaktionsofen 12 is communicated with separately.
Main reaction stove 11 adopts resistance 17 to heat, and temperature range during deposition is 900 ℃～1600 ℃.
Auxiliary Reaktionsofen 12 adopts ruhmkorff coil 18 to heat, and during work, temperature range is 1800 ℃～2500 ℃.
Filling porous carbon felt 15 in auxiliary Reaktionsofen, as the working substance of ruhmkorff coil 18.
Connecting pipe 13 is Separated type combination structure, by flange 14, is connected.
Vacuum system 16 is comprised of the vacuum pump of two parallel runnings, has magnetic valve to connect between two vacuum pumps, a job, and one is standby.
In the present invention, major advantage is: trichloromethyl silane content remaining in (1) body of heater and pipeline is very low; (2) in vacuum pump oil, dust granules content reduces, and has extended vacuum pump oil duration of service, cost-saving; (3) the coat of silicon carbide quality of preparing is good; (4), not only for the preparation of coat of silicon carbide, also can be used for chemical vapor infiltration and prepare silicon carbide fiber reinforced ceramic matric composite; (5) in major-minor Reaktionsofen, all can produce coat of silicon carbide; (6) in main reaction stove, produce silicon carbide fiber reinforced ceramic matric composite; (7) the carbon felt that auxiliary Reaktionsofen is produced strengthens carbon/silicon carbide ceramic matrix composite after pulverizing, and can be used as the filler of other carbon-based materials.
Accompanying drawing explanation
Fig. 1 is chemical vapor deposition unit structural representation of the present invention.
11 is main reaction stove, and 12 is auxiliary Reaktionsofen, and 13 is connecting pipe, and 14 is flange, and 15 is porous carbon felt, and 16 is vacuum system, and 17 is heating resistor, and 18 is ruhmkorff coil.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment is only not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims to the modification of the various equivalent form of values of the present invention and limit.
Referring to Fig. 1, Fig. 1 is chemical vapor deposition of silicon carbide apparatus structure schematic diagram of the present invention.Described chemical vapor deposition unit mainly comprises main reaction stove 11, the vacuum system 16 for eliminating the auxiliary Reaktionsofen 12 of unnecessary trichloromethyl silane, being communicated with described auxiliary Reaktionsofen 12 for carrying out chemical vapour deposition.Described main reaction stove 11 adopts resistance 17 to heat, and temperature range during deposition is 1050 ℃.Described auxiliary Reaktionsofen 12 adopts ruhmkorff coil 18 to heat, and during work, temperature range is 2000 ℃, inner filling porous carbon felt 15.Described main reaction stove 11 is communicated with by connecting pipe 13 with auxiliary Reaktionsofen 12, and connecting pipe 13 is Separated type combination structure, by flange 14, connects.Described vacuum system 16 is comprised of the vacuum pump of two parallel runnings.During deposition, main reaction stove 11 and auxiliary Reaktionsofen 12 air pressure are all below 100Pa.
Above are only single embodiment of the present invention, but design concept of the present invention is not limited to this, allly utilizes this design to carry out the change of unsubstantiality to the present invention, all should belong to the behavior of invading the scope of protection of the invention.In every case be the content that does not depart from technical solution of the present invention, any type of simple modification, equivalent variations and the remodeling above embodiment done according to technical spirit of the present invention, still belong to the protection domain of technical solution of the present invention.
Claims (7)
1. a combined chemistry vapour deposition silicon carbide device, it is characterized in that comprising main reaction stove for carrying out chemical vapour deposition and for eliminating the auxiliary Reaktionsofen of unnecessary trichloromethyl silane, main reaction stove and auxiliary Reaktionsofen have connecting pipe, and auxiliary Reaktionsofen is directly connected with vacuum system.
2. chemical vapor deposition of silicon carbide device according to claim 1, is characterized in that described main reaction stove adopts resistive heating mode, and temperature range during deposition is 900 ℃～1600 ℃.
3. chemical vapor deposition of silicon carbide device according to claim 1, is characterized in that described auxiliary Reaktionsofen adopts induction heating mode, and during work, temperature range is 1800 ℃～2500 ℃.
4. chemical vapor deposition of silicon carbide device according to claim 1, is characterized in that, in described auxiliary Reaktionsofen, weighting material is housed, and weighting material is porous carbon fiber felt.
5. chemical vapor deposition of silicon carbide device according to claim 1, is characterized in that described connecting pipe is Separated type combination structure, by flange, connects, and has heat preservation carbon felt, pipeline to be coated with the adiabatic aerogel blanket of insulation or glass fiber blanket in pipeline.
6. chemical vapor deposition of silicon carbide device according to claim 1, is characterized in that described vacuum system is comprised of the vacuum pump of two parallel runnings.
7. chemical vapor deposition of silicon carbide device according to claim 1, is characterized in that described main reaction stove can be one, and two or three, every main reaction stove all and between auxiliary Reaktionsofen is communicated with separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310142519.9A CN103723731B (en) | 2013-04-22 | 2013-04-22 | A kind of combined chemistry vapour deposition silicon carbide device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310142519.9A CN103723731B (en) | 2013-04-22 | 2013-04-22 | A kind of combined chemistry vapour deposition silicon carbide device |
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| CN103723731A true CN103723731A (en) | 2014-04-16 |
| CN103723731B CN103723731B (en) | 2015-10-21 |
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| CN201310142519.9A Active CN103723731B (en) | 2013-04-22 | 2013-04-22 | A kind of combined chemistry vapour deposition silicon carbide device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109336114A (en) * | 2018-11-02 | 2019-02-15 | 山东天岳先进材料科技有限公司 | A method of promoting high-purity silicon carbide powder combined coefficient |
| CN110975432A (en) * | 2019-12-20 | 2020-04-10 | 湖南德智新材料有限公司 | Chemical vapor deposition tail gas recycling system and method |
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| CN1146428A (en) * | 1995-09-29 | 1997-04-02 | 中国科学院山西煤炭化学研究所 | Method for production of coated silicon carbide fibre and reactor thereof |
| CN1159490A (en) * | 1995-11-06 | 1997-09-17 | 俄亥俄航空及航天研究所 | Compound semi-conductors and controlled doping thereof |
| US20020071803A1 (en) * | 2000-09-06 | 2002-06-13 | Silbid Ltd. | Method of producing silicon carbide power |
| US20030094130A1 (en) * | 2001-11-16 | 2003-05-22 | International Business Machines Corporation | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
| TW554065B (en) * | 2000-02-24 | 2003-09-21 | Shipley Co Llc | Low resistivity silicon carbide |
| CN1510163A (en) * | 2002-12-24 | 2004-07-07 | 西北工业大学 | Container internal surface chemical vapor depositon coating method |
| CN1810639A (en) * | 2006-02-24 | 2006-08-02 | 中国人民解放军国防科学技术大学 | Chemical vapor deposition process of preparing Sic nanotube |
| CN102351182A (en) * | 2011-07-06 | 2012-02-15 | 西安建筑科技大学 | Preparation method of ultra-long silicon carbide nano-wires |
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2013
- 2013-04-22 CN CN201310142519.9A patent/CN103723731B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1146428A (en) * | 1995-09-29 | 1997-04-02 | 中国科学院山西煤炭化学研究所 | Method for production of coated silicon carbide fibre and reactor thereof |
| CN1159490A (en) * | 1995-11-06 | 1997-09-17 | 俄亥俄航空及航天研究所 | Compound semi-conductors and controlled doping thereof |
| TW554065B (en) * | 2000-02-24 | 2003-09-21 | Shipley Co Llc | Low resistivity silicon carbide |
| US20020071803A1 (en) * | 2000-09-06 | 2002-06-13 | Silbid Ltd. | Method of producing silicon carbide power |
| US20030094130A1 (en) * | 2001-11-16 | 2003-05-22 | International Business Machines Corporation | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
| US6875279B2 (en) * | 2001-11-16 | 2005-04-05 | International Business Machines Corporation | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
| CN1510163A (en) * | 2002-12-24 | 2004-07-07 | 西北工业大学 | Container internal surface chemical vapor depositon coating method |
| CN1810639A (en) * | 2006-02-24 | 2006-08-02 | 中国人民解放军国防科学技术大学 | Chemical vapor deposition process of preparing Sic nanotube |
| CN102351182A (en) * | 2011-07-06 | 2012-02-15 | 西安建筑科技大学 | Preparation method of ultra-long silicon carbide nano-wires |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109336114A (en) * | 2018-11-02 | 2019-02-15 | 山东天岳先进材料科技有限公司 | A method of promoting high-purity silicon carbide powder combined coefficient |
| CN110975432A (en) * | 2019-12-20 | 2020-04-10 | 湖南德智新材料有限公司 | Chemical vapor deposition tail gas recycling system and method |
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| CN103723731B (en) | 2015-10-21 |
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Addressee: TAICANG PAIOU TECHNOLOGY CONSULTATION SERVICE CO., LTD. Document name: Notification of Passing Preliminary Examination of the Application for Invention |
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Address after: 215400 Chengxiang City, Taicang Province town of the People South Road, No. 162, No. Patentee after: TAICANG PAIOU TECHNOLOGY CONSULTATION SERVICE CO., LTD. Address before: Taicang City, Suzhou City, Jiangsu Province, and 215400 Metro Jianxiong Road No. 20 Patentee before: TAICANG PAIOU TECHNOLOGY CONSULTATION SERVICE CO., LTD. |