CN103715358A - Organic light emitting diode - Google Patents
Organic light emitting diode Download PDFInfo
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- CN103715358A CN103715358A CN201210380310.1A CN201210380310A CN103715358A CN 103715358 A CN103715358 A CN 103715358A CN 201210380310 A CN201210380310 A CN 201210380310A CN 103715358 A CN103715358 A CN 103715358A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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Abstract
The invention provides an organic light emitting diode. The organic light emitting diode is provided with multiple luminescence areas and comprises an anode layer, a cathode layer, an organic luminescent layer and a wavelength offset layer. The organic luminescent layer is configured between the anode layer and the cathode layer so as to be corresponding to multiple emission light provided by the luminescence areas. The organic luminescent layer has a fixed thickness. The wavelength offset layer is configured outside the cathode layer, the organic luminescent layer and the anode layer. A half-peak wavelength scope synthesized by the emission light is wider than the half-peak wavelength scope of single emission light.
Description
Technical field
The invention relates to a kind of Organic Light Emitting Diode, and particularly relevant for a kind of have wider send out Organic Light Emitting Diode spectral.
Background technology
Now, flat-panel screens (liquid crystal display (Liquid Crystal Display for example, abbreviation LCD), organic light emitting diode display (Organic Light-Emitting Diodes Display, abbreviation OLED), plasma scope (Plasma Display Panel, be called for short PDP) and Field Emission Display (FieldEmission Display is called for short FED) etc.) indispensable electrical home appliances become.And, because organic light emitting diode display has without angle limitations, low manufacturing cost, high answer speed (being about the more than hundred times of liquid crystal), power saving, self-luminous, the DC driven that can be used in portable machine, operating temperature range is large and the advantage such as lightweight, so organic light emitting diode display is expected to replace liquid crystal display and becomes flat-panel screens of new generation.
Yet, relation due to processing procedure, the radiative luminous frequency spectrum of each Organic Light Emitting Diode may be different, that is each Organic Light Emitting Diode tone when presenting same color is can be slightly different, so that organic LED display panel has the phenomenon of colour cast, and then affected the display effect of organic LED display panel.Therefore the utilizing emitted light colour cast that, how to reduce Organic Light Emitting Diode is an important topic of design organic LED display panel.
Summary of the invention
The invention provides a kind of Organic Light Emitting Diode, can promote and radiatively send out width spectral, to alleviate the color offset phenomenon of organic LED display panel.
The invention provides a kind of Organic Light Emitting Diode, there are a plurality of light-emitting zones.Organic Light Emitting Diode comprises anode layer, cathode layer, organic luminous layer and wavelength shift layer.Organic luminous layer is configured between anode layer and cathode layer, in order to corresponding these light-emitting zones, provides a plurality of utilizing emitted lights, and wherein organic luminous layer is fixed thickness; Wavelength shift layer is configured in outside cathode layer, organic luminous layer and anode layer.These launch photosynthetic half peak wavelength scope, wider compared with each radiative half peak wavelength scope.
Based on above-mentioned, the Organic Light Emitting Diode of the embodiment of the present invention, a plurality of radiative wave-length coverage of its corresponding different light-emitting zones differs from one another, and therefore half peak value scope of synthetic rear Organic Light Emitting Diode Integral luminous can broaden, to alleviate the color offset phenomenon of organic LED display panel.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Figure 1A is the structural representation of the Organic Light Emitting Diode of first embodiment of the invention;
Figure 1B is each radiative spectrum diagram of Figure 1A of one embodiment of the invention;
Fig. 1 C is the Integral luminous spectrum diagram of Figure 1A of one embodiment of the invention;
Fig. 1 D is the structural representation of the Organic Light Emitting Diode of second embodiment of the invention;
Fig. 2 A is the structural representation of the Organic Light Emitting Diode of third embodiment of the invention;
Fig. 2 B is the structural representation of the Organic Light Emitting Diode of fourth embodiment of the invention;
Fig. 3 A is the structural representation of the Organic Light Emitting Diode of third embodiment of the invention;
Fig. 3 B is the structural representation of the Organic Light Emitting Diode of fourth embodiment of the invention.
Description of reference numerals:
100,100 ', 200,200 ', 300,300 ': Organic Light Emitting Diode;
100a, 100b, 200a, 200b, 300a, 300b: light-emitting zone;
110,210,310: substrate;
120,120 ', 220,220 ', 320,320 ': anode layer;
130,130 ', 230,230 ', 330,330 ': organic luminous layer;
131,131 ', 231,231 ', 331,331 ': hole injection layer;
133,133 ', 233,233 ', 333,333 ': hole transmission layer;
135,135 ', 235,235 ', 335a, 335b, 335a ', 335b ': emission layer;
137,137 ', 237,237 ', 337,337 ': electron transfer layer;
139,139 ', 239,239 ', 339,339 ': electron injecting layer;
140,140 ', 240,240 ', 340,340 ': cathode layer;
150,250,350: superimposed layer;
150 ', 250 ', 350 ': resilient coating;
150a, 150b, 150a ', 150b ': optical shift part;
250a, 250b, 250a ', 250b ': optical shift layer;
L11, L12, L11 ', L12 ', L21, L22, L21 ', L22 ', L31, L32, L31 ', L32 ': utilizing emitted light;
WR1, WR2, WR3: half peak value wave-length coverage.
Embodiment
Figure 1A is the structural representation of the Organic Light Emitting Diode of first embodiment of the invention.Please refer to Figure 1A, in the present embodiment, Organic Light Emitting Diode 100 is top light emitting (Top Emission) type Organic Light Emitting Diode, and has a plurality of light-emitting zones (take two light-emitting zone 100a and light-emitting zone 100b at this is example).Organic Light Emitting Diode 100 comprises substrate 110, anode layer 120, organic luminous layer 130, cathode layer 140 and wavelength shift layer (at this, take superimposed layer 150 as example), wherein the thickness of organic luminous layer 130 is constant, that is organic luminous layer 130 is fixed thickness.Organic luminous layer 130 comprises hole injection layer 131, hole transmission layer 133, emission layer 135, electron transfer layer 137 and electron injecting layer 139.The corresponding light-emitting zone of superimposed layer 150 (as light-emitting zone 100a and light-emitting zone 100b) is divided into a plurality of optical shifts part (take two optical shift part 150a and optical shift part 150b at this is example), and the material of superimposed layer 150 can be organic dielectric materials or Inorganic Dielectric Material, but the embodiment of the present invention is not as limit.
Shown in Figure 1A, Organic Light Emitting Diode 100 is sequentially placement substrate 110, anode layer 120, organic luminous layer 130, cathode layer 140 and superimposed layer 150 from the bottom to top, that is superimposed layer 150 is configured on anode layer 120, organic luminous layer 130 and cathode layer 140.In other words, anode layer 120 is configured between substrate 110 and organic luminous layer 130 and contact substrate 110 and organic luminous layer 130, organic luminous layer 130 is configured between anode layer 120 and cathode layer 140, and cathode layer 140 is configured between organic luminous layer 130 and superimposed layer 150.
Organic luminous layer 130 is from the bottom to top for sequentially configuring hole injection layer 131, hole transmission layer 133, emission layer 135, electron transfer layer 137 and electron injecting layer 139.In other words, emission layer 135 is configured between electron transfer layer 137 and hole transmission layer 133, and electron injecting layer 139 is configured between cathode layer 140 and electron transfer layer 137, and hole injection layer 131 is configured between anode layer 120 and hole transmission layer 133.
When organic luminous layer 130 is subject to the electric field influence of anode layer 120 and cathode layer 140, the organic luminous layer 130 corresponding light-emitting zone 100a of meeting and light-emitting zone 100b provide utilizing emitted light, and the utilizing emitted light of organic luminous layer 130 can be offset its spike microscler one-tenth utilizing emitted light L11 and utilizing emitted light L12 through optical shift part 150a and optical shift part 150b.And, because the thickness of optical shift part 150a and optical shift part 150b is different, that is the long side-play amount difference of spike, therefore the spike of utilizing emitted light L11 and utilizing emitted light L12 is long can be different, so that utilizing emitted light L11 can be different from utilizing emitted light L12 in the wave-length coverage of half peak value in the wave-length coverage of half peak value.Thus, after merging the luminous frequency spectrum of utilizing emitted light L11 and utilizing emitted light L12, the Integral luminous frequency spectrum of Organic Light Emitting Diode 100 can be wider than utilizing emitted light L11 or utilizing emitted light L12 in the wave-length coverage of half peak value in the wave-length coverage of half peak value, so that can alleviate the color offset phenomenon (variation causes as processing procedure thickness colour cast and/or visual angle colour cast) of the organic LED display panel that utilizes Organic Light Emitting Diode 100 manufactures, and relatively can relax the thickness processing procedure form (process window) of Organic Light Emitting Diode 100.
Figure 1B is each radiative spectrum diagram of Figure 1A of one embodiment of the invention.Fig. 1 C is the Integral luminous spectrum diagram of Figure 1A of one embodiment of the invention.Please refer to Figure 1A and Figure 1B, in the present embodiment, the material of supposing superimposed layer 150 is tin oxide (SnO
2), the thickness of optical shift part 150a is 6nm, the thickness of optical shift part 150b is 35nm, and the area of optical shift part 150a approximates the area of optical shift part 150b.
The luminous frequency spectrum of utilizing emitted light L11 and utilizing emitted light L12 as shown in Figure 1B, the corresponding half-wavelength scope of utilizing emitted light L11 WR1 partially overlaps in the corresponding half-wavelength scope of utilizing emitted light L12 WR2, and wherein half-wavelength scope WR1 can be different from half-wavelength scope WR2.The width of this routine medium wavelength scope WR1 is about 35nm, and the width of wave-length coverage WR2 is about 33nm.
Integral luminous frequency spectrum as shown in Figure 1 C, after merging utilizing emitted light L11 and utilizing emitted light L12, the Integral luminous frequency spectrum of Organic Light Emitting Diode 100 is about 41nm at the width of the wave-length coverage WR3 of half peak value.In other words, after merging utilizing emitted light L11 and utilizing emitted light L12, the luminous frequency spectrum of Organic Light Emitting Diode 100 integral body can be wider than the luminous frequency spectrum of utilizing emitted light L11 or utilizing emitted light L12.Therefore, utilize the color offset phenomenon of the organic LED display panel of Organic Light Emitting Diode 100 manufactures to alleviate.
Fig. 1 D is the structural representation of the Organic Light Emitting Diode of second embodiment of the invention.Please refer to Figure 1A and Fig. 1 D, in the present embodiment, the structure of Organic Light Emitting Diode 100 ' is approximately identical to Organic Light Emitting Diode 100, its difference is that Organic Light Emitting Diode 100 ' is for bottom-emission (Bottom Emission) type Organic Light Emitting Diode, that is difference is that anode layer 120 ', organic luminous layer 130 ', cathode layer 140 ' and wavelength shift layer (at this, take resilient coating (buffer layer) 150 ' is example) are with respect to the allocation position of substrate 110.Shown in Fig. 1 D, Organic Light Emitting Diode 100 ' is sequentially placement substrate 110, resilient coating 150 ', anode layer 120 ', organic luminous layer 130 ' and cathode layer 140 ' from the bottom to top, that is resilient coating 150 ' is configured between substrate 110 and cathode layer 140 ' and contact substrate 110.The same corresponding light-emitting zone of resilient coating 150 ' (as light-emitting zone 100a and light-emitting zone 100b) is divided into a plurality of optical shift parts (as optical shift part 150a ' and optical shift part 150b ').The structure of organic luminous layer 130 ' is same as organic luminous layer 130, that is from the bottom to top for sequentially configuring hole injection layer 131 ', hole transmission layer 133 ', emission layer 135 ', electron transfer layer 137 ' and electron injecting layer 139 '.
And the utilizing emitted light that the corresponding light-emitting zone 100a of organic luminous layer 130 ' and light-emitting zone 100b provide forms utilizing emitted light L11 ' and utilizing emitted light L12 ' after optical shift part 150a ' and optical shift part 150b ' carry out peak wavelength shift.And because the thickness of optical shift part 150a ' and optical shift part 150b ' is different, so utilizing emitted light L11 ' can be different from utilizing emitted light L12 ' in the wave-length coverage of half peak value in the wave-length coverage of half peak value.Thus, the Integral luminous frequency spectrum of Organic Light Emitting Diode 100 ' can be wider than utilizing emitted light L11 ' or utilizing emitted light L12 ' in the wave-length coverage of half peak value in the wave-length coverage of half peak value, so that can alleviate the color offset phenomenon of the organic LED display panel that utilizes Organic Light Emitting Diode 100 ' manufacture, and relatively can relax the thickness processing procedure form of Organic Light Emitting Diode 100 '.
Fig. 2 A is the structural representation of the Organic Light Emitting Diode of third embodiment of the invention.Please refer to Fig. 2 A, in the present embodiment, Organic Light Emitting Diode 200 is top luminescent organic LED, and has a plurality of light-emitting zones (take two light-emitting zone 200a and light-emitting zone 200b at this is example).Organic Light Emitting Diode 200 comprises substrate 210, anode layer 220, organic luminous layer 230, cathode layer 240 and wavelength shift layer (at this, take superimposed layer 250 as example), wherein the thickness of organic luminous layer 230 is constant, that is organic luminous layer 230 is fixed thickness.Organic luminous layer 230 comprises hole injection layer 231, hole transmission layer 233, emission layer 235, electron transfer layer 237 and electron injecting layer 239.Superimposed layer 150 comprises a plurality of optical shift layers (take two optical shift layer 250a and optical shift layer 250b at this is example) of different refractivity, and respectively corresponding these light-emitting zones (as light-emitting zone 200a and light-emitting zone 200b) of these optical shift layers (as optical shift layer 250a and optical shift layer 250b) and Contact cathod layer 240 respectively.
Shown in Fig. 2 A, Organic Light Emitting Diode 200 is sequentially placement substrate 210, anode layer 220, organic luminous layer 230, cathode layer 240 and superimposed layer 250 from the bottom to top.Organic luminous layer 230 is from the bottom to top for sequentially configuring hole injection layer 231, hole transmission layer 233, emission layer 235, electron transfer layer 237 and electron injecting layer 239.
And the utilizing emitted light that the corresponding light-emitting zone 200a of organic luminous layer 230 and light-emitting zone 200b provide forms utilizing emitted light L21 and utilizing emitted light L22 after optical shift layer 250a and optical shift layer 250b carry out peak wavelength shift.And, because the refractive index of optical shift layer 250a and optical shift layer 250b is different, that is the long side-play amount difference of spike, so utilizing emitted light L21 can be different from utilizing emitted light L22 in the wave-length coverage of half peak value in the wave-length coverage of half peak value.Thus, the Integral luminous frequency spectrum of Organic Light Emitting Diode 200 can be wider than utilizing emitted light L21 or utilizing emitted light L22 in the wave-length coverage of half peak value in the wave-length coverage of half peak value, so that can alleviate the color offset phenomenon of the organic LED display panel that utilizes Organic Light Emitting Diode 200 manufactures, and relatively can relax the thickness processing procedure form of Organic Light Emitting Diode 200.
Fig. 2 B is the structural representation of the Organic Light Emitting Diode of fourth embodiment of the invention.Please refer to Fig. 2 A and Fig. 2 B, in the present embodiment, the structure of Organic Light Emitting Diode 200 ' is approximately identical to Organic Light Emitting Diode 200, its difference is that Organic Light Emitting Diode 200 ' is for bottom-emission type Organic Light Emitting Diode, that is difference is that anode layer 220 ', organic luminous layer 230 ', cathode layer 240 ' and wavelength shift layer (at this, take resilient coating 250 ' as example) are with respect to the allocation position of substrate 210.Shown in Fig. 2 B, Organic Light Emitting Diode 200 ' is sequentially placement substrate 210, resilient coating 250 ', anode layer 220 ', organic luminous layer 230 ' and cathode layer 240 ' from the bottom to top.Resilient coating 250 ' comprises a plurality of optical shift layers (as optical shift part 250a ' and optical shift part 250b ') of corresponding these light-emitting zones (as light-emitting zone 200a and light-emitting zone 200b) equally.The structure of organic luminous layer 230 ' is same as organic luminous layer 230, that is from the bottom to top for sequentially configuring hole injection layer 231 ', hole transmission layer 233 ', emission layer 235 ', electron transfer layer 237 ' and electron injecting layer 239 '.
And the utilizing emitted light that the corresponding light-emitting zone 200a of organic luminous layer 230 ' and light-emitting zone 200b provide forms utilizing emitted light L21 ' and utilizing emitted light L22 ' after optical shift layer 250a ' and optical shift layer 250b ' carry out peak wavelength shift.And because the refractive index of optical shift layer 250a ' and optical shift layer 250b ' is different, so utilizing emitted light L21 ' can be different from utilizing emitted light L22 ' in the wave-length coverage of half peak value in the wave-length coverage of half peak value.Thus, the Integral luminous frequency spectrum of Organic Light Emitting Diode 200 ' can be wider than utilizing emitted light L21 ' or utilizing emitted light L22 ' in the wave-length coverage of half peak value in the wave-length coverage of half peak value, so that can alleviate the color offset phenomenon of the organic LED display panel that utilizes Organic Light Emitting Diode 200 ' manufacture, and relatively can relax the thickness processing procedure form of Organic Light Emitting Diode 200 '.
Fig. 3 A is the structural representation of the Organic Light Emitting Diode of third embodiment of the invention.Please refer to Fig. 3 A, in the present embodiment, Organic Light Emitting Diode 300 is top luminescent organic LED, and has a plurality of light-emitting zones (take two light-emitting zone 300a and light-emitting zone 300b at this is example).Organic Light Emitting Diode 300 comprises substrate 310, anode layer 320, organic luminous layer 330, cathode layer 340 and wavelength shift layer (at this, take superimposed layer 350 as example), wherein the thickness of organic luminous layer 330 is constant, that is organic luminous layer 330 is fixed thickness.Organic luminous layer 330 comprises hole injection layer 331, hole transmission layer 333, a plurality of emission layer (at this, take two emission layer 335a and emission layer 335b is example), electron transfer layer 337 and electron injecting layer 339, wherein the material of these emission layers (as emission layer 335a and emission layer 335b) is roughly the same, but its doping content differs from one another.
Shown in Fig. 3 A, Organic Light Emitting Diode 300 is sequentially placement substrate 310, anode layer 320, organic luminous layer 330, cathode layer 340 and superimposed layer 350 from the bottom to top.Organic luminous layer 330 is from the bottom to top for sequentially configuring hole injection layer 331, hole transmission layer 333, emission layer (as emission layer 335a or emission layer 335b), electron transfer layer 337 and electron injecting layer 339.
And emission layer 335a and emission layer 335b respectively corresponding light-emitting zone 300a and light-emitting zone 300b provide utilizing emitted light L31 and utilizing emitted light L32.And, because the doping content of emission layer 335a and emission layer 335b is different, therefore it is long that the spike length of utilizing emitted light L31 can be different from the spike of utilizing emitted light L32, that is utilizing emitted light L31 can be different from utilizing emitted light L32 in the wave-length coverage of half peak value in the wave-length coverage of half peak value.Thus, the Integral luminous frequency spectrum of Organic Light Emitting Diode 300 can be wider than utilizing emitted light L31 or utilizing emitted light L32 in the wave-length coverage of half peak value in the wave-length coverage of half peak value, so that can alleviate the color offset phenomenon of the organic LED display panel that utilizes Organic Light Emitting Diode 300 manufactures, and relatively can relax the thickness processing procedure form of Organic Light Emitting Diode 300.
Fig. 3 B is the structural representation of the Organic Light Emitting Diode of fourth embodiment of the invention.Please refer to Fig. 3 A and Fig. 3 B, in the present embodiment, the structure of Organic Light Emitting Diode 300 ' is approximately identical to Organic Light Emitting Diode 300, its difference is that Organic Light Emitting Diode 300 ' is for bottom-emission type Organic Light Emitting Diode, that is difference is that anode layer 320 ', organic luminous layer 330 ', cathode layer 340 ' and wavelength shift layer (at this, take resilient coating 350 ' as example) are with respect to the allocation position of substrate 310.Shown in Fig. 3 B, Organic Light Emitting Diode 300 ' is sequentially placement substrate 310, resilient coating 350 ', anode layer 320 ', organic luminous layer 330 ' and cathode layer 340 ' from the bottom to top.Organic luminous layer 330 ' comprises a plurality of emission layers (as emission layer 335a ' and emission layer 335b ') of corresponding these light-emitting zones (as light-emitting zone 300a and light-emitting zone 300b) equally.The structure of organic luminous layer 330 ' is same as organic luminous layer 330, that is from the bottom to top for sequentially configuring hole injection layer 331 ', hole transmission layer 333 ', emission layer (as emission layer 335a ' or emission layer 335b '), electron transfer layer 337 ' and electron injecting layer 339 '.
And emission layer 335a ' and emission layer 335b ' respectively corresponding light-emitting zone 300a and light-emitting zone 300b provide utilizing emitted light L31 ' and utilizing emitted light L32 '.And because the doping content of emission layer 335a ' and emission layer 335b ' is different, so utilizing emitted light L31 ' can be different from utilizing emitted light L32 ' in the wave-length coverage of half peak value in the wave-length coverage of half peak value.Thus, the Integral luminous frequency spectrum of Organic Light Emitting Diode 300 ' can be wider than utilizing emitted light L31 ' or utilizing emitted light L32 ' in the wave-length coverage of half peak value in the wave-length coverage of half peak value, so that can alleviate the color offset phenomenon of the organic LED display panel that utilizes Organic Light Emitting Diode 300 ' manufacture, and relatively can relax the thickness processing procedure form of Organic Light Emitting Diode 300 '.
In the above-described embodiments, Organic Light Emitting Diode is (as Organic Light Emitting Diode 100, Organic Light Emitting Diode 100 ', Organic Light Emitting Diode 200, Organic Light Emitting Diode 200 ', Organic Light Emitting Diode 300, Organic Light Emitting Diode 300 ') anode layer is (as anode layer 120, anode layer 120 ', anode layer 220, anode layer 220 ', anode layer 320, anode layer 320 '), organic luminous layer is (as organic luminous layer 130, organic luminous layer 130 ', organic luminous layer 230, organic luminous layer 230 ', organic luminous layer 330, organic luminous layer 330 ') and cathode layer (as cathode layer 140, cathode layer 140 ', cathode layer 240, cathode layer 240 ', cathode layer 340, cathode layer 300 ') be sequentially configuration from the bottom to top, but in other embodiments, anode layer is (as anode layer 120, anode layer 120 ', anode layer 220, anode layer 220 ', anode layer 320, anode layer 320 '), organic luminous layer is (as organic luminous layer 130, organic luminous layer 130 ', organic luminous layer 230, organic luminous layer 230 ', organic luminous layer 330, organic luminous layer 330 ') and cathode layer (as cathode layer 140, cathode layer 140 ', cathode layer 240, cathode layer 240 ', cathode layer 340, cathode layer 300 ') can be for being sequentially configuration from top to bottom.And organic luminous layer is (as organic luminous layer 130, organic luminous layer 130 ', organic luminous layer 230, organic luminous layer 230 ', organic luminous layer 330, organic luminous layer 330 ') hole injection layer is (as hole injection layer 131, hole injection layer 131 ', hole injection layer 231, hole injection layer 231 ', hole injection layer 331, hole injection layer 331 '), hole transmission layer is (as hole transmission layer 133, hole transmission layer 133 ', hole transmission layer 233, hole transmission layer 233 ', hole transmission layer 333, hole transmission layer 333 '), emission layer is (as emission layer 135, emission layer 135 ', emission layer 235, emission layer 235 ', emission layer 335, emission layer 335 '), electron transfer layer is (as electron transfer layer 137, electron transfer layer 137 ', electron transfer layer 237, electron transfer layer 237 ', electron transfer layer 337, electron transfer layer 337 ') and electron injecting layer (as electron injecting layer 139, electron injecting layer 139 ', electron injecting layer 239, electron injecting layer 239 ', electron injecting layer 339, electron injecting layer 339 ') be adjusted into accordingly from top to bottom sequentially configuration.
In sum, the Organic Light Emitting Diode of the embodiment of the present invention, a plurality of radiative spike length of its corresponding different light-emitting zones differs from one another, that is these utilizing emitted lights differ from one another in the wave-length coverage of half peak value, therefore Organic Light Emitting Diode Integral luminous frequency is wider than each utilizing emitted light in the wave-length coverage of half peak value in the wave-length coverage of half peak value, to alleviate the color offset phenomenon of organic LED display panel.And superimposed layer or resilient coating can adopt Inorganic Dielectric Material, to reduce the manufacturing cost of Organic Light Emitting Diode.
Finally it should be noted that: each embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit above; Although the present invention is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (8)
1. an Organic Light Emitting Diode, has a plurality of light-emitting zones, it is characterized in that, comprising:
One anode layer;
One cathode layer;
One organic luminous layer, is configured between this anode layer and this cathode layer, in order to corresponding those light-emitting zones, provides a plurality of utilizing emitted lights, and wherein this organic luminous layer is fixed thickness; And
One wavelength shift layer, is configured in outside this cathode layer, this organic luminous layer and this anode layer, and those launch photosynthetic half peak wavelength scope, and compared with each, those radiative half peak wavelength scopes are wider.
2. Organic Light Emitting Diode according to claim 1, is characterized in that, this organic luminous layer comprises:
One electron transfer layer;
One hole transmission layer; And
A plurality of emission layers, are configured between this electron transfer layer and this hole transmission layer, and corresponding those light-emitting zones.
3. Organic Light Emitting Diode according to claim 2, is characterized in that, the doping content of those emission layers differs from one another.
4. Organic Light Emitting Diode according to claim 2, is characterized in that, this organic luminous layer also comprises:
One electron injecting layer, is configured between this cathode layer and this electron transfer layer; And
One hole injection layer, is configured between this anode layer and this hole transmission layer.
5. Organic Light Emitting Diode according to claim 1, is characterized in that, this wavelength shift layer comprises a plurality of optical shift layers, contacts respectively this cathode layer, and the refractive index of those optical shift layers differs from one another.
6. Organic Light Emitting Diode according to claim 1, is characterized in that, corresponding those light-emitting zone of those wavelength shift layers are divided into a plurality of optical shift parts, and the thickness of those optical shift parts differs from one another.
7. Organic Light Emitting Diode according to claim 1, is characterized in that, also comprises a substrate, and this anode layer is configured between this substrate and this organic luminous layer and contacts this substrate, and this cathode layer is configured between this wavelength shift layer and this organic luminous layer.
8. Organic Light Emitting Diode according to claim 1, is characterized in that, also comprises a substrate, and this wavelength shift layer is configured between this substrate and this anode layer and contacts this substrate.
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Application publication date: 20140409 |