CN103715305A - Laser etching texturizing process - Google Patents
Laser etching texturizing process Download PDFInfo
- Publication number
- CN103715305A CN103715305A CN201310748064.5A CN201310748064A CN103715305A CN 103715305 A CN103715305 A CN 103715305A CN 201310748064 A CN201310748064 A CN 201310748064A CN 103715305 A CN103715305 A CN 103715305A
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- CN
- China
- Prior art keywords
- laser
- etching
- cone
- shaped
- texturizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000010329 laser etching Methods 0.000 title abstract 4
- 238000005530 etching Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000000608 laser ablation Methods 0.000 claims description 7
- 230000001413 cellular effect Effects 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 235000008216 herbs Nutrition 0.000 description 6
- 210000002268 wool Anatomy 0.000 description 6
- 239000002253 acid Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the field of crystalline silicon solar cell texturizing, in particular to a laser etching texturizing process. In the laser etching texturizing process, a laser machine is adopted, and the specific technological process includes the first step of inputting a cone-shaped etching graph on a control computer of the laser machine, the second step of setting a fixed included angle a between a laser source and a plumb line, wherein the laser source rotates around a supporting column in the middle of the laser machine to etch out a cone-shaped pit, and the third step of enabling laser to carry out memory etching on the surface of a whole silicon wafer and finally forming the foveolate cone-shaped pits. The laser etching texturizing process has the advantages that through the process, the foveolate cone-shaped pits can be etched out, and the type of etching graph can enable the reflectivity to be reduced to 6% or so.
Description
Technical field
The present invention relates to the making herbs into wool field of crystal silicon solar batteries, particularly a kind of laser ablation process for etching.
Background technology
When silicon chip is made cell piece, because silicon chip surface is smooth, sunlight can be reflected back greatly, causing solar cell to absorb light reduces, conversion efficiency is low, in order to reduce reflection of light, introduced this technology of making herbs into wool, domestic main flow making herbs into wool technology is wet etching technique, utilize acid, caustic corrosion technology, alkali making herbs into wool utilizes the anisotropic etch principle of alkali to silicon chip, corrode into not of uniform size, the pyramid shape of rule, make it reach the effect that reduces reflection of light, its reflectivity is about 14%, acid making herbs into wool utilizes the isotropic etch principle of acid to silicon chip, corrode into rule hole not of uniform size, make it reach the effect that reduces reflection of light, because hole is irregular, cause anti-reflective effect to be not so good as alkali making herbs into wool, its reflectivity is 24% left and right.
Summary of the invention
For the problems referred to above, the present invention, in order to make up the defect of prior art, provides a kind of laser ablation process for etching that reduces reflectivity, has significantly improved conversion efficiency of solar cell.
The present invention is achieved through the following technical solutions:
A laser ablation process for etching, adopts laser machine, and concrete technical process is: (1) inputs the etching figure that is shaped as cone on the control computer of laser machine; (2) setting laser source becomes fixed angle a with plumb line, and lasing light emitter etches conic shaped around the pillar rotation in the middle of laser machine; (3) laser, in whole silicon chip surface memory etching, finally forms cellular cone pit.
The invention has the beneficial effects as follows: this invention laser ablation process for etching, can etch cellular cone pit, the etching figure of this type can be down to 6% left and right by reflectivity.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Accompanying drawing 1 is laser machine work schematic diagram in the present invention;
Accompanying drawing 2 is for being used the final etching effect schematic diagram of the present invention;
In figure, 1 lasing light emitter, 2 pillars, 3 plumb lines.
Embodiment
Accompanying drawing is a kind of specific embodiment of the present invention.This invents a kind of laser ablation process for etching, adopts laser machine, and concrete technical process is: (1) inputs the etching figure that is shaped as cone on the control computer of laser machine; (2) 3 one-tenth fixed angle a in setting laser source 1 and plumb line, lasing light emitter 1 etches conic shaped around pillar 2 rotations in the middle of laser machine; (3) laser carries out etching at whole silicon chip surface, finally forms cellular cone pit.By this process, make the reflectivity of stacked solar cell sunlight be down to 6% left and right, the transformation efficiency of the battery significantly improving.
Claims (1)
1. a laser ablation process for etching, adopts laser machine, and concrete technical process is: (1) inputs the etching figure that is shaped as cone on the control computer of laser machine;
(2) setting laser source (1) becomes fixed angle a with plumb line (3), and lasing light emitter (1) etches conic shaped around pillar (2) rotation in the middle of laser machine;
(3) laser, in whole silicon chip surface memory etching, finally forms cellular cone pit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310748064.5A CN103715305A (en) | 2013-12-31 | 2013-12-31 | Laser etching texturizing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310748064.5A CN103715305A (en) | 2013-12-31 | 2013-12-31 | Laser etching texturizing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103715305A true CN103715305A (en) | 2014-04-09 |
Family
ID=50408110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310748064.5A Pending CN103715305A (en) | 2013-12-31 | 2013-12-31 | Laser etching texturizing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103715305A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105400514A (en) * | 2015-11-12 | 2016-03-16 | 西安交通大学 | Ordered patterned remote fluorescent crystal material as well as preparation method and application thereof |
| CN110137283A (en) * | 2019-06-10 | 2019-08-16 | 通威太阳能（安徽）有限公司 | A kind of Monocrystalline silicon cell piece and its etching method increasing specific surface area |
| CN112701184A (en) * | 2020-12-16 | 2021-04-23 | 天津爱旭太阳能科技有限公司 | Method for manufacturing textured surface of crystalline silicon battery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201124222A (en) * | 2010-01-07 | 2011-07-16 | Corum Solar Co Ltd | Solar wafer texturization manufacture process and its product using laser method to texture the surface of the wafer. |
| KR20130128905A (en) * | 2012-05-18 | 2013-11-27 | 한국기계연구원 | Optical head for machining cone shape and the laser processing apparatus using thereof |
-
2013
- 2013-12-31 CN CN201310748064.5A patent/CN103715305A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201124222A (en) * | 2010-01-07 | 2011-07-16 | Corum Solar Co Ltd | Solar wafer texturization manufacture process and its product using laser method to texture the surface of the wafer. |
| KR20130128905A (en) * | 2012-05-18 | 2013-11-27 | 한국기계연구원 | Optical head for machining cone shape and the laser processing apparatus using thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105400514A (en) * | 2015-11-12 | 2016-03-16 | 西安交通大学 | Ordered patterned remote fluorescent crystal material as well as preparation method and application thereof |
| CN110137283A (en) * | 2019-06-10 | 2019-08-16 | 通威太阳能（安徽）有限公司 | A kind of Monocrystalline silicon cell piece and its etching method increasing specific surface area |
| CN112701184A (en) * | 2020-12-16 | 2021-04-23 | 天津爱旭太阳能科技有限公司 | Method for manufacturing textured surface of crystalline silicon battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140409 |