CN103712601B

CN103712601B - Liquid multilayer-capacitaninclination inclination microensor

Info

Publication number: CN103712601B
Application number: CN201210377904.7A
Authority: CN
Inventors: 陈荣祥; 陈政赐; 陈柏廷
Original assignee: SAGA GROUP Ltd
Current assignee: SAGA GROUP Ltd
Priority date: 2012-10-08
Filing date: 2012-10-08
Publication date: 2016-06-01
Anticipated expiration: 2032-10-08
Also published as: CN103712601A

Abstract

The present invention discloses a kind of liquid multilayer-capacitaninclination inclination microensor, comprising: at least two to differential electrode, and often pair of differential electrode is positioned at same level; At least one common electrode, a part and each pair of differential electrode of this common electrode are positioned at same plane; This differential electrode and this common electrode are arranged in an enclosed space; And enclose the Covering Liguid of this enclosed space; Wherein, the profile of this differential electrode forms a circular part respectively. This sensor also can comprise sense slowdown monitoring circuit. The invention also discloses the manufacture method of this sensor.

Description

Liquid multilayer-capacitaninclination inclination microensor

Technical field

The present invention relates to a kind of pitch angle sensor, particularly about a kind of liquid multilayer-capacitaninclination inclination sensor.

Prior art

Having wide range of applications of water level gauge (pitch angle sensor), such as build the construction location of engineering, the horizontal degree measurement of mechanical platform, the monitoring of automobile and aircraft balanced system, the inclination of bridge and railway and deformation monitoring, subsidiary level line during camera view, the tilting manipulation application etc. of mobile phone, even in semi-conductor, chemistry and raw medical professionals's journey etc., its application all visible. The micro-water level gauge of current visible, mainly can be divided into the sense of mechanical type, gas type and liquid-type to survey mode according to its sense survey mode.

Mechanical type water level gauge mainly utilizes a quality block, and when water level gauge tilts, this quality block is affected by gravity, and the electrode at quality block two ends is changed with between corresponding fixed electorde, causes the capacitance variations between quality cube electrode and two ends fixed electorde. Mechanical type water level gauge judges angle of inclination by measuring this electrical capacity. Mechanical structure is adopted comparatively easily to realize in technique, but due to the usual comparatively fragility of its spring structure, it is easy to rupture because of external force.

Gas type water level gauge arranges the annular seal space that is marked with reference gas, it may also be useful to well heater is by the gas heating around it. When tilting, the thermal convection in closed cavities changes, and by the resistance change of the thermistor of HEATER FOR MEASURING surrounding, can calculate angle of inclination. Micro-level construction of gas type is comparatively simple, and the impact by microstructure size variation is also less, but still must additionally increase the procedure of processing sealed by cavity together on manufacturing, and it is also comparatively slow for the speed of response of change of pitch angle.

The existing liquid water level gauge that declines injects electrolytic solution in a closed cavities, and this electrolytic solution has electroconductibility. When cavity does not tilt, soak two electrode resistance value essence in the electrolytic solution identical. But when cavity tilts, two end electrodes is soaked area in the electrolytic solution and is changed so that the resistance value of two electrodes produces difference. By reading circuit, this change of pitch angle is changed into electrical signal to export. The structure that mode is surveyed in liquid sense is the simplest, and the reaction times is also very fast, but must increase the procedure of processing of one enclosed housing equally.

Micro-water level gauge mostly manufactures sensing component respectively with MEMS technology and CMOS technology and reads circuit, not only manufacturing cost height, and volume is difficult to further reduction, also easily produces noise. Although independent MEMS technology is higher in the design flexibility degree of freedom of microstructure, but does not still have the MEMS (micro electro mechanical system) of a set of standard can meet design flexibility at present simultaneously and can carry out integrated with circuit again.

TaiWan, China patent TW522221 discloses a kind of inclination sensor, and this sensor has printed base plate and the pair of differential electrode electrically independent each other being arranged on this printed base plate, and and the common electrode plate at differential electrode interval. Differential electrode and common electrode plate are accommodated in an enclosed space by this, and enclose dielectricity liquid in this enclosed space. When inclination sensor tilts, the area of each this differential electrode of dielectricity soaked with liquid changes so that it is electric capacity produces to change. By measuring the capacitance of two differential electrodes, it is possible to calculate angle of inclination. This inclination sensor is not with micro-electromechanical technology manufacture, and volume is very huge.

Japanese Patent Publication JP2008-261695 discloses a kind of miniature gradient sensor. This sensor has and above-mentioned No. TW522221 identical structure, and uses identical principle, but the liquid enclosed is conductive liquid. This sensor manufactures with micro-electromechanical technology, and volume can reduce, but it constructs and is not suitable for using standard CMOS process to manufacture so that manufacturing cost improves. And its differential electrode forms semicircle so that its sensing accuracy is limited, it is unsuitable for utilizing in more accurate application. In addition, circuit must manufacture this sensor respectively with reading, integrated difficulty.

Summary of the invention

Namely the object of the present invention is to provide the novel architecture of a kind of liquid capacitanc inclination microensor.

It is also an object of this invention to provide a kind of liquid capacitanc inclination microensor detecting multi-direction oblique angle degree.

The object of the present invention is also to provide a kind of liquid capacitanc inclination microensor with multipair differential electrode.

The object of the present invention is also to provide a kind of inclination micro sensor that standard CMOS process can be utilized to manufacture.

The object of the present invention is also to provide the inclination micro sensor of the integrated reading circuit of a kind of energy and sensing component.

The object of the present invention is also to provide a kind of without mobile component, and can improve the inclination micro sensor of detecting tolerance range.

The object of the present invention is also to provide the novel process for preparing of a kind of liquid capacitanc inclination microensor.

The object of the present invention be also to provide a kind of can utilize standard CMOS process manufacture and be integrated with read circuit inclination micro sensor method for making.

The object of the present invention is also to provide the method for making of a kind of multidirectional inclination angle micro sensor.

The object of the present invention is also to provide the method for making of the inclination micro sensor of a kind of tool multilayer differential electrode.

Liquid capacitanc inclination microensor according to the present invention, it is characterised in that, have: at least two to differential electrode, and often pair of differential electrode is positioned on same level; At least one common electrode, a part and each pair of differential electrode of this common electrode are in the same plane; This differential electrode and this common electrode are arranged in an enclosed space; And enclose the Covering Liguid of this enclosed space. The electrode profile of this multipair differential electrode can form a circular part respectively, is preferably fan-shaped. This multipair differential electrode can be formed in same plane, it is also possible to is formed in Different Plane, mutually with a spacing separately. Not in the same plane if any two pairs of differential electrodes, this common electrode can use one or more, such as, provide community electrode in each plane.

This sensor also can comprise reading circuit, the capacitance produced in order to read each electrode of this differential electrode. And the function at the angle of inclination judged on same direction or different directions can be provided. The surface of the plurality of differential electrode and/or this common electrode also can comprise lubricant film at least partially. This common electrode can be formed in around this differential electrode. This differential electrode can comprise the multiple breach being formed in battery lead plate edge respectively, and this common electrode can comprise the multiple protuberances stretching into this breach. When battery lead plate is scalloped profile, the plurality of breach may extend into more than the half length of the radius of each differential electrode plate sector. This Covering Liguid can be conductive liquid or dielectric fluid. The plurality of differential electrode and this common electrode can be formed on a silicon substrate. This reading circuit also can be formed on the silicon substrate of this differential electrode and this common electrode. This differential electrode and this common electrode can be formed on the dielectric layer on a silicon substrate. Profile and the area of this multipair differential electrode may be the same or different.

The method of the manufacture liquid multilayer-capacitaninclination inclination microensor according to the present invention, comprises the steps:

Prepare first substrate;

This first substrate is formed one and comprises multiple metal level and the stack architecture of multiple dielectric layer; At least two are comprised to the pattern of differential electrode and at least one common electrode in this stack architecture, it is characterised in that, the profile of described differential electrode forms a circular part, and arbitrary this differential electrode has the approximate shape area identical with essence;

Described in release, at least two to differential electrode and at least one common electrode;

Prepare second substrate;

This second substrate forms material layer;

This material layer forms groove;

This groove adds Covering Liguid;

This first substrate is covered on this second substrate, makes this differential electrode and common electrode enter in this groove; And

In conjunction with this first substrate and this second substrate.

This differential electrode profile is preferably fan-shaped. Different to differential electrode can be positioned at the different layers of this stack architecture, and separated from one another. Different to differential electrode, profile can be identical or different each other from area.

This first substrate can be silicon substrate, and this second substrate can be glass substrate or plastic base. This common electrode can be formed in around corresponding differential electrode. This differential electrode can comprise the multiple breach being formed in battery lead plate edge respectively, and this common electrode can comprise the multiple protuberances stretching into this breach. When this differential electrode plate is fan-shaped or during semi-circular profile, the plurality of breach may extend into more than the half length of the sector of differential electrode plate or the radius of semicircle. This Covering Liguid can be conductive liquid or dielectric fluid.

This differential electrode and common electrode can be formed on the material layer on this first substrate, after therefore the method also can be included in and prepare first substrate, form the step of a material layer on this first substrate. This material layer can comprise at least one dielectric layer. This material layer yet can comprise at least one metal level and a dielectric layer.

The method also can comprise: when forming this differential electrode and common electrode pattern, forms the step of a reading circuit simultaneously. The method also can comprise: when forming this differential electrode and common electrode pattern and this material layer, forms the step that reads circuit simultaneously. The method also can comprise: after this differential electrode and common electrode discharge, applies the step of lubricant film at least a part of the surface thereof.

The material layer formed on this second substrate can be photoresist, and the step of this formation groove can comprise the step of the part removing this material layer. The step discharging this differential electrode and common electrode can comprise etching, to remove the step of the stack architecture beyond this differential electrode and common electrode pattern.

Accompanying drawing explanation

Fig. 1 is the structural representation of the first embodiment of the liquid multilayer-capacitaninclination inclination microensor representing the present invention.

Fig. 2 is the structural representation of the 2nd embodiment of the liquid multilayer-capacitaninclination inclination microensor representing the present invention.

Fig. 3 is the structural representation of the liquid multilayer-capacitaninclination inclination microensor illustrating the present invention.

Fig. 4 a and Fig. 4 b is the first sensing direction principle schematic of the liquid capacitanc inclination microensor of the present invention.

Principle schematic is surveyed in the second direction sense that Fig. 5 a and Fig. 5 b is the liquid capacitanc inclination microensor of the present invention.

Fig. 6 is the schema of the manufacture method of the liquid capacitanc inclination microensor illustrating the present invention.

Fig. 7 is the manufacturing processed intention of the liquid capacitanc inclination microensor illustrating the present invention.

Main element numbers explanation

100 inclination micro sensors

10 first substrates

11,12,13,14,15,16 differential electrode

11a, 12a recess

17 shared electrode

17a protuberance

21,22,23,24,25,26, differential electrode

27��28

29 supporting structures

30 second substrates

31 partition walls

32 enclosed spaces

33 Covering Liguids

35 reading circuit

36 grooves

Embodiment

Below, structure and the method for making of the present invention are described with reference to embodiment. It is noted that: the embodiment used is only for illustrating possibility or the preferred implementation of the present invention, and is not for limiting the scope of the invention.

Fig. 1 is the structural representation of the first embodiment of the liquid multilayer-capacitaninclination inclination microensor illustrating the present invention. As shown in the figure, the inclination micro sensor 100 of the present embodiment comprises 6 differential electrodes 11,12,13,14,15,16, and they are formed in substantially identical plane. Label 17 represents common electrode, can form an electric capacity with each differential electrode. In the construction shown in fig. 1, differential electrode 11 and 12 being decided to be first right, it is right that differential electrode 13 and 14 is decided to be the twoth, and it is right that differential electrode 15 and 16 is decided to be the 3rd.

Fig. 2 is the structural representation of the 2nd embodiment of the liquid multilayer-capacitaninclination inclination microensor illustrating the present invention. As shown in the figure, the inclination micro sensor 100 of the present embodiment comprises the 4 groups of differential electrode 21-28 being positioned on upper and lower 4 layer planes. The differential electrode being positioned at same layer plane can comprise pair of differential electrode, or multipair differential electrode. If multipair time, its structure can be as shown in Figure 1. In this case, namely this liquid multilayer-capacitaninclination inclination microensor comprises 12 pairs of differential electrodes. All differential electrodes can share the common electrode of or more.

In the preferred embodiment of the present invention, differential electrode is two right with every layer, altogether double-layer structure, forms 4 to differential electrode (electric capacity), comparatively practical. Reason is: manufacturing comparatively simple, cost is lower, and can form the detecting of multidirectional angle of inclination. Such as, but other array mode, increases or eliminate duplication, increase or reduce the differential electrode logarithm of every layer, can be suitable in the present invention.

Fig. 2 also illustrates, above-mentioned differential electrode assembly is formed on first substrate 10. Substrate 10 shown in Fig. 2 is the substrate used in the middle of standard CMOS process, i.e. silica substrate. On this substrate 10, form multiple dielectric layer with standard CMOS process, multiple metal level, and multiple conducting holes etc. And, in the stack architecture that this dielectric layer, metal level and conducting hole are formed, form differential electrode and common electrode pattern with metal level or with metal level and dielectric layer, then discharge electrode pattern in modes such as such as Wet-type etchings, so that it may to obtain required electrode.

Fig. 2 illustrates that 4 layers of electrode layer are formed on the substrate 10. But in the preferred embodiment of the present invention, do not use the first metal level. In such instances, do not have the electrode layer 21,22 of bottom in figure, but more than the 2nd on metal level 23,24, form the electrode layer of bottom. Can separate by dielectric layer between each electrode layer, or separate with dielectric layer and metal level. This common electrode can comprise multiple metal level and multiple dielectric layer. And arbitrary electrode layer also can comprise multiple metal level and multiple dielectric layer. Therefore, these electrode layers need to define its scope with conducting hole, and as protective layer during etching release.

Fig. 3 is the structural representation of the liquid multilayer-capacitaninclination inclination microensor illustrating the present invention. There is shown in Fig. 3 the electrode layer assembly of 4 Rotating fields. Shown in Fig. 3 around this differential electrode 21-28 and common electrode 17 region, form supporting structure 29 with multiple dielectric layer, multiple metal level and multiple conducting hole. Above this supporting structure 29, form partition wall 31, above partition wall 31, cover second substrate 30, make this first substrate 10, this supporting structure 29, partition wall 31 define an enclosed space 32 with second substrate 30. Namely Covering Liguid 33 and electrode layer assembly are sealed in this enclosed space 32.

In the preferred embodiment of the present invention, this partition wall 31 uses photoresist manufacture, and this second substrate 30 is glass material. But the applicable material of the present invention is not limited to shown in this example.

This differential electrode 21-28 is formed on the metal level of more than the 2nd, it is possible to the stray capacitance between minimizing and substrate. But it is manufactured on other layer to be also possible. If electrode layer is not formed on first layer metal layer, then will there is material layer between this electrode layer and substrate 10. This material layer may also be removed after electrode discharges, it is also possible to retain. In addition, a part for this differential electrode 21-28 and this common electrode 17 is preferably formed on same metal level, but can also be formed on different metal levels.

In order to suppress this Covering Liguid 33 to be attached on the surface of this differential electrode 21-28 and this common electrode 17 because of wicking action, lubricant film (not shown) can be imposed in the whole or selected part of this electrode surface. The material of this lubricant film is well-known to those skilled in the art, such as, can be Teflon. This second substrate 30 is attached to the method for first substrate 10, it is possible to use any fixture, and with suitable combination, second substrate 30 is fixed to the predetermined position of first substrate 10. Such as fix with viscose, it is possible to select and the viscose of this partition wall 31 material and this metal level or dielectric layer material compatibility, fixing with pressure or heating, form key coat (not shown).

Please refer to Fig. 1. Shown in this Fig. 1, differential electrode 11-16 respectively forms scalloped profile. It is provided with multiple breach around therein. Within this common electrode 17 body is then formed in the inner circumferential of differential electrode 11-16, and stretch in the plurality of breach with multiple protuberance. Thus formed structure, i.e. so-called finger differential electric capacity. In the present embodiment, by by each circular two halves to being distributed in differential electrode and formed of differential electrode 11-16, it is possible to reconnaissance range to be expanded to �� 90 ��. But in actual applications, it is possible to do not need so big angle scope, therefore the outline shape of differential electrode 11-16 only need to occupy a circular part, such as any angle between 45 �� to 90 ��. In addition, the outline shape that differential electrode 11-16 is formed should be similar to, and area is substantially equal. It is preferred mode that often pair of differential electrode combines in the mirror mode of penetrating. The benchmark that this mirror is penetrated is preferably the circular central that differential electrode 11-16 surrounds. So can guarantee the exactness of measuring result.

In other examples of the invention, the profile of differential electrode 11-16 does not form a circular part. Any can make one two differential electrodes are formed substantially corresponding shape, and not reduce the shape measuring exactness, all applicable. Such as equilateral triangle or isosceles triangle, the polygon type of isosceles are all its examples.

Fig. 1 also illustrates, the breach that this differential electrode 11-16 is formed, is deep into the inside of battery lead plate, reaches more than 1/2. That is, when this battery lead plate 11-16 is fan-shaped, this breach extends internally and reaches more than the 1/2 of radius. Meanwhile, this common electrode 17 extension portion, also coordinates and stretches into this breach, reach differential electrode plate radius more than half. The electric capacity so formed, capacitance is higher, and the change for angle of inclination is comparatively responsive, it is possible to improve precision or the resolving power of detecting.

In the example of figure 2, because providing multilayer differential electrode, the capacitance variations of each pair of said electrode can be represented in a matrix fashion when measuring, namely with simply detecting mode, the change at angle of inclination can be recorded. In other words, do not need the resolving power improving capacitance detecting, trickle angle change can be detected.

Having the angle of inclination detector of above feature, it is possible to use standard CMOS process manufacture, therefore can be manufactured in same substrate with reading circuit, and complete simultaneously, this is enough to simplify produces and reduces costs. In addition, it is possible to solve detector and the difficult problem reading the integrated difficulty of circuit in prior art.

Fig. 4 a and Fig. 4 b is the first sensing direction principle schematic of the liquid capacitanc inclination microensor of the present invention. In figure 3, Vin represents input voltage, and 35 represent reading circuit. The sensor 100 of the present invention is equivalent to 24 groups of electric capacity, and the liquid 33 that electric capacity covers can change the relative position with differential electrode because of the change of sensor institute angle setting degree, the area being covered on each battery lead plate is changed, and then produces capacitance variations. By reading circuit 35, this capacitance variations signal conversion voltage is exported. When Fig. 4 a illustrates that this sensor 100 is in initial state, Covering Liguid 33 covers the 2nd, and the area on differential electrode 13,14 is identical, therefore the capacitance that both produce is identical. But for the 1st to differential electrode the 11,12 and the 3rd to differential electrode 15,16, then for covering completely and the combination completely not covered.

When as shown in Figure 4 b, when detector 100 is to first party to inclination, liquid maintains original position because of gravity, now namely the area of each pair of capped liquid 33 covering of differential electrode changes, and thus produces the change of capacitance. Sense capacitance structure design according to the present invention, after measuring the capacitance of each pair of differential electrode, calculate gained difference will with angle of inclination height of formation linear relationship. Therefore can calculate this detector to first party to angle of inclination.

Principle schematic is surveyed in the second direction sense that Fig. 5 a and Fig. 5 b is the liquid capacitanc inclination microensor of the present invention. In the original state of Fig. 5 a, the area that the capped liquid 33 of each differential electric capacity of layer covers is identical. But after this sensor tilts to second direction, as shown in Figure 5 b, the area that each layer is covered by liquid 33 changes, and thus causes the change of capacitance. By from the capacitance measured by each differential electrode with matrix representation, the vector formed can represent this sensor to first party to the angle of inclination with second direction.

Below, the method for making of the liquid multilayer-capacitaninclination inclination microensor of the present invention is described with example. Fig. 6 is the schema of the liquid capacitanc inclination microensor manufacture method illustrating the present invention. Fig. 7 is the manufacturing processed intention of the liquid capacitanc inclination microensor illustrating the present invention. As shown in Figure 6, when manufacturing the liquid capacitanc inclination microensor of the present invention, manufacture substrate 10 first in step 601. The material of this substrate 10 is not limited to them, but typically can use the baseplate material of general application in standard CMOS process, i.e. silica substrate, to make the present invention can utilize CMOS technology manufacture. But use the material that other is firm, or other be adapted in CMOS technology use material, it is possible to obtain identical effect. Secondly, in step 602, this substrate 10 forms material layer. This material layer can comprise: is formed in the dielectric layer above this substrate 10; It is formed in multiple metal level above this dielectric layer, alternate with each other and dielectric layer; And conducting hole in the inner, position. These material layers form stack architecture, but when manufacturing this stack architecture, form the pitch angle sensor 100 of the present invention wherein and read the pattern of circuit 35. The method being applicable to manufacturing this material layer, comprises any commercial technique being used for being formed circuit structure and/or microstructure, and what be wherein relatively suitable for is standard CMOS process.

This reading circuit 35 can be the circuit structure utilizing commercial circuit designs instrument to complete, such as, by the multilayer circuit layer obtained by CMOS technology. It is used for detecting capacitance and exports the circuit of measuring result, it is possible to use the circuit of any known technology designs. To those skilled in the art, design has the circuit of above-mentioned functions, and utilizes suitable technique to be formed on this substrate 10, is apparent, relevant technical details at this without the need to repeating.

As for the manufacture of this detector 100 part, it is that at least two be formed in the middle of this material layer are separated by metal level in this example, such as third layer metal level and the 5th metal level. Its manufacture method comprises: after forming special metal layer, with methods such as etchings, forms differential electrode and common electrode pattern, forms dielectric layer with top, be so concatenated to form the step of stack architecture around this electrode pattern. Wherein, the outline shape of the differential electrode of same pair is belonged to approximate or in correspondence with each other, and area essence is identical. Within shared electrode 17 inner circumferentials being formed in differential electrode. Also forming recess 11a, 12a at this differential electrode 11-16 in the face of the edge of shared electrode 17, the correspondence position in shared electrode 17 then forms protuberance 17a, stretches in this recess 11a, 12a. Formed in this stack architecture and there is battery lead plate pattern that is above-mentioned and further feature, also belong to prior art. In addition, the plane that same level or essence are identical forms multipair differential electrode, it is possible to utilize existing technology to realize. Those skilled in the art are after reading this case patent specification and accompanying drawing, it is possible to the complete easily. Relevant technical details, also repeats no more at this.

In this material layer, it is possible to comprise with supporting structure 29 that multiple metal level, multiple dielectric layer and multiple conducting hole are formed jointly. This supporting structure 29 normally runs through multiple dielectric layer and metal level with conducting hole, to improve its intensity. Like this, the structure of the enclosed space that will be formed it is enough to support. Manufacture the technology of this kind of supporting structure, it is possible to use above-mentioned CMOS technology, complete in same process step with this reading circuit 35 and battery lead plate 21-28. Relevant technical details, also needn't elaborate any further.

In other examples of the invention, this battery lead plate 21-28 not only includes single metal level, but comprises multiple layer metal layer and the dielectric layer between metal interlevel. As being necessary, it is possible to comprise conducting hole. As for being applicable to this metal level and the material in dielectric layer and conducting hole, it is not limited to them, and it is well known to those skilled in the art. Typically, the material of this metal level can be aluminium, and the material of this dielectric can be silicon-dioxide, and the material in this conducting hole can be copper.

In step 603, secondly, remove the dielectric layer beyond this battery lead plate 21-28 and 17 or dielectric layer and metal level, until battery lead plate 21-28,17 discharges. Gained result is as shown in Figure 7a. In step 604, lubricant film (not shown) is applied on this battery lead plate 21-28,17 surface. The material of this lubricant film can be any material that can eliminate or reduce this electrode plate surface wicking action. In the preferred embodiment of the present invention, adopt Teflon. Certainly, other can provide material that is identical or similar functions, all applicable. Its applying method is also without the restriction in any technology, but comparatively feasible to revolve die coating method, and effect is also good. This lubricant film thickness is also unrestricted, but should not be too thick, in order to avoid impact detecting effect.

, in step 605, then second substrate 30 is prepared. The material of this second substrate 30 is not limited to them, but with hard, easily be processed as suitable. In the preferred embodiment of the present invention, this second substrate 30 is glass substrate. Such as, but other material, plastics, resin, glass fibre, metal, pottery or its matrix material, all applicable. In step 606, thereafter, this second substrate forms partition material layer 31. The material of this partition material layer 31 is also without any restrictions. But consider that technique is convenient, in the preferred embodiment of the present invention, utilize photoresist to manufacture. The photoresist being suitable for comprises SU-8 etc. This partition material layer 31 can be formed on this second substrate 30 by any mode, and its thickness is also without any restrictions, but with can be formed enough volumes to hold Covering Liguid be advisable. Typically, about can between 100 to 2,000um, more fortunately between 200 to 1,000um. The material layer of gained, namely as shown in 7b figure. In step 607, in this partition material layer 31, form groove 36, to be used as to hold the room, chamber of Covering Liguid. Form the method for groove, mainly remove a part for this material layer, such as, formed with engraving method. Otherwise, but, the technology such as such as burn off, are also possible. As being necessary, can separately form line of cut (not shown). Material layer after formation comprises this second substrate 30, the partition wall 31 around groove 36 and groove 36, as shown in Figure 7 c.

Then, in step 608, in this groove 36, Covering Liguid 33 is added. This Covering Liguid 33 can be conductive liquid or dielectric fluid. If electro-conductive material, then can be electrolytic solution, magnetic liquid, liquid metal, the material such as liquid containing nano-metal particle. If dielectric fluid, then higher with proportion and that stickiness is lower material is more applicable, such as silicone oil, i.e. its suitable example. Covering Liguid 33 amount added is not limited to them, but be full of this room, chamber 36 volume half about be advisable. Rapid 609, the open end face of this partition wall 31 applies viscose. In step 610, this first substrate 10 is covered on this second substrate 30, this multilayer differential electrode 21-28 and this common electrode 17 are entered in this groove 36. Now, this supporting structure 29 withstands this viscose. In step 611, fix this first substrate 10 and this second substrate 30. Its mode can be any solidify this viscose, and the method making both closely fixing. Finally, in units of detector 100, cutting the material layer formed, namely obtain the inclination micro sensor of the present invention, its structure is as shown in Figure 3.

Not only structure is simple, easy to manufacture for liquid multilayer-capacitaninclination inclination microensor disclosed in this invention, and can be combined with standard CMOS process, namely integrated with reading circuit in the fabrication process, is enough to save cost and manufacturing time. The sensor of the present invention can detect the angle of inclination of three-dimensional space, and because using observed value matrix to do basis, it is possible to reduce the demand of system manufacturing accuracy. Micro sensor grain-size made by the present invention can reduce. Typically, with the area of 2.3*3.1mm, namely can be made into and there is highly sensitive and contain or do not contain the detector reading circuit. The present invention provides the pitch angle detector of reconnaissance range up to �� 90 ��.

Claims

1. a liquid capacitanc inclination microensor, it is characterised in that, have: at least two to differential electrode, and often pair of differential electrode is positioned on same level; At least one common electrode, a part and each pair of differential electrode of this common electrode are in the same plane; This differential electrode and this common electrode are arranged in an enclosed space; And enclose the Covering Liguid of this enclosed space, wherein, this multipair differential electrode is formed in Different Plane, mutually with a spacing separately.

2. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, the electrode profile of this multipair differential electrode forms a circular part respectively.

3. liquid capacitanc inclination microensor as claimed in claim 2, it is characterised in that, the electrode profile of this multipair differential electrode forms sector respectively.

4. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, also comprise reading circuit, in order to read the capacitance that each electrode of differential electrode is produced by this.

5. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, the surface of the plurality of differential electrode and/or this common electrode also comprise lubricant film at least partially.

6. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, this common electrode is formed in the inner side of described differential electrode.

7. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, described differential electrode comprises the multiple breach being formed in battery lead plate edge respectively, and this common electrode comprises the multiple protuberances stretching into this breach.

8. liquid capacitanc inclination microensor as claimed in claim 7, it is characterised in that, the profile of described differential electrode plate is fan-shaped, and described multiple breach extends to more than the half length of fan-shaped radius of each differential electrode plate.

9. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, described Covering Liguid is the one in conductive liquid and dielectric fluid.

10. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, described differential electrode and described common electrode are formed on a silicon substrate.

11. liquid capacitanc inclination microensor as claimed in claim 4, it is characterised in that, described differential electrode and described common electrode are formed on a silicon substrate, and described reading circuit is formed on the silicon substrate of this differential electrode and this common electrode.

12. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, described differential electrode and described common electrode are formed on the dielectric layer on a silicon substrate.

13. liquid capacitanc inclination microensor as claimed in claim 1, it is characterised in that, the profile of described multipair differential electrode can be identical or different each other with area.

14. 1 kinds manufacture the method for liquid multilayer-capacitaninclination inclination microensor, it is characterised in that, comprise the steps:

Prepare first substrate;

Prepare second substrate;

This second substrate forms material layer;

This material layer forms groove;

This groove adds Covering Liguid;

In conjunction with this first substrate and this second substrate,

Wherein, different to described differential electrode be positioned at the different layers of this stack architecture, and separated from one another.

15. such as the method for claim 14, it is characterised in that, the profile of described differential electrode is fan-shaped.

16. such as the method for claim 14, it is characterised in that, different to the profile of described differential electrode identical with area.

17. such as the method for claim 14, it is characterised in that, this first substrate is silicon substrate, and this second substrate is glass substrate or plastic base.

18. such as the method for claim 14, it is characterised in that, this common electrode is formed in the periphery of corresponding differential electrode.

19. such as the method for claim 14, it is characterised in that, this differential electrode comprises the multiple breach being formed in battery lead plate edge respectively, and this common electrode comprises the multiple protuberances stretching into this breach.

20. such as the method for claim 19, it is characterised in that, the profile of this differential electrode plate is fan-shaped, and the plurality of breach extends to more than the half length of sector of differential electrode plate.

21. such as the method for claim 14, it is characterised in that, this Covering Liguid is the one in conductive liquid and dielectric fluid.

22. such as the method for claim 14, it is characterised in that, described differential electrode and common electrode are formed on the material layer on described first substrate, and the method also comprises: after the described first substrate of preparation, form material layer on this first substrate.

23. such as the method for claim 22, it is characterised in that, this material layer comprises at least one dielectric layer.

24. such as the method for claim 22, it is characterised in that, this material layer comprises at least one metal level and a dielectric layer.

25. such as the method for claim 14, it is characterised in that, also comprise: when forming this differential electrode with common electrode pattern, form reading circuit simultaneously.

26. such as the method for claim 22, it is characterised in that, also comprise: when forming this differential electrode with common electrode pattern and this material layer, form reading circuit simultaneously.

27. such as the method for claim 14, it is characterised in that, also comprise: after this differential electrode and common electrode discharge, its surface at least partially on apply lubricant film.

28. such as the method for claim 14, it is characterised in that, the material layer formed on this second substrate is photoresist, and the step of this formation groove comprises: the part removing this material layer.

29. such as the method for claim 14, it is characterised in that, the step discharging this differential electrode and common electrode comprises etching, to remove the stack architecture beyond this differential electrode and common electrode pattern.