CN103708470B - SiF 4preparation method - Google Patents
SiF 4preparation method Download PDFInfo
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- CN103708470B CN103708470B CN201310711119.5A CN201310711119A CN103708470B CN 103708470 B CN103708470 B CN 103708470B CN 201310711119 A CN201310711119 A CN 201310711119A CN 103708470 B CN103708470 B CN 103708470B
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201510357751.3A CN104891502A (en) | 2013-12-20 | 2013-12-20 | Preparation method of SiF4 |
CN201310711119.5A CN103708470B (en) | 2013-12-20 | 2013-12-20 | SiF 4preparation method |
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CN201310711119.5A CN103708470B (en) | 2013-12-20 | 2013-12-20 | SiF 4preparation method |
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CN201510357751.3A Division CN104891502A (en) | 2013-12-20 | 2013-12-20 | Preparation method of SiF4 |
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CN103708470A CN103708470A (en) | 2014-04-09 |
CN103708470B true CN103708470B (en) | 2016-02-03 |
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CN201510357751.3A Pending CN104891502A (en) | 2013-12-20 | 2013-12-20 | Preparation method of SiF4 |
CN201310711119.5A Active CN103708470B (en) | 2013-12-20 | 2013-12-20 | SiF 4preparation method |
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CN201510357751.3A Pending CN104891502A (en) | 2013-12-20 | 2013-12-20 | Preparation method of SiF4 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104071820B (en) * | 2014-07-21 | 2017-06-13 | 扬州百德光电有限公司 | A kind of method that calcirm-fluoride is produced by the LCD glass etching liquid that gives up |
CN105110359B (en) * | 2015-09-09 | 2017-03-29 | 洛阳国兴矿业科技有限公司 | A kind of method that utilization low-grade bauxite prepares aluminium fluoride |
CN105271239B (en) * | 2015-10-28 | 2017-10-03 | 内江师范学院 | A kind of method that using plasma method prepares nano-metal silicon |
CN105347348A (en) * | 2015-11-26 | 2016-02-24 | 中国船舶重工集团公司第七一八研究所 | Water removal method for silicon tetrafluoride |
CN109205646B (en) * | 2017-07-07 | 2021-08-10 | 中国科学院过程工程研究所 | Method for enriching alumina in fly ash and method for preparing solid white carbon black |
CN110681667B (en) * | 2018-07-05 | 2022-02-18 | 中国科学院过程工程研究所 | Method for removing silicon dioxide in minerals and/or solid wastes |
CN109205669A (en) * | 2018-11-19 | 2019-01-15 | 新特能源股份有限公司 | The combined preparation process of zirconium chloride and ocratation |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1110959A (en) * | 1994-01-31 | 1995-11-01 | 南非原子能有限公司 | Treatment of a chemical |
CN1856442A (en) * | 2003-09-25 | 2006-11-01 | 昭和电工株式会社 | Method for producing tetrafluorosilane |
CN101061060A (en) * | 2004-11-18 | 2007-10-24 | 瓦克化学股份公司 | Process for preparing element halides |
-
2013
- 2013-12-20 CN CN201510357751.3A patent/CN104891502A/en active Pending
- 2013-12-20 CN CN201310711119.5A patent/CN103708470B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1110959A (en) * | 1994-01-31 | 1995-11-01 | 南非原子能有限公司 | Treatment of a chemical |
CN1856442A (en) * | 2003-09-25 | 2006-11-01 | 昭和电工株式会社 | Method for producing tetrafluorosilane |
CN101061060A (en) * | 2004-11-18 | 2007-10-24 | 瓦克化学股份公司 | Process for preparing element halides |
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CN104891502A (en) | 2015-09-09 |
CN103708470A (en) | 2014-04-09 |
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C53 | Correction of patent for invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Danyang Inventor after: Liu Rui Inventor after: Gong Yayun Inventor after: Lin Lehong Inventor after: Zhang Lin Inventor before: Li Danyang Inventor before: Yang Xianjin Inventor before: Liu Rui Inventor before: Gong Yayun Inventor before: Lin Lehong Inventor before: Zhang Lin |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LI DANYANG YANG XIANJIN LIU RUI GONG YAYUN LIN LEHONG ZHANG LIN TO: LI DANYANG LIU RUI GONG YAYUN LIN LEHONG ZHANG LIN |
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ASS | Succession or assignment of patent right |
Owner name: GUIZHOU TIANHE RUIGAO NEW MATERIAL TECHNOLOGY CO., Free format text: FORMER OWNER: GUIZHOU WANFANG REALUMINATION SCIENCE + TECHNOLOGY DEVELOPMENT CO., LTD. Effective date: 20150729 |
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Effective date of registration: 20150729 Address after: 550500 Guizhou province Fuquan Machangping Office Industrial Park Building Applicant after: GUIZHOU TIANHE GUORUN ADVANCED MATERIALS TECHNOLOGY CO., LTD. Address before: 550022 B569 building, Jinyang hi tech Industrial Park, Guiyang hi tech Development Zone, Guizhou, China Applicant before: GUIZHOU WANFANG ALUMINUM SCIENCE AND TECHNOLOGY DEVELOPMENT CO., LTD. |
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