CN103700732B - Optical spin injection structure and injection method - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Abstract
The invention provides an optical spin injection structure and an injection method. The optical spin injection structure comprises a substrate layer and a buffer layer, a resonance tunneling structural layer and a cap layer which grow on the substrate layer in sequence; the resonance tunneling structural layer is sequentially provided with a quantum well layer, an interval layer, a quantum point layer or the quantum point layer, the interval layer and the quantum well layer along the growth direction; the lattice constant of the quantum point layer is larger than that of the buffer layer, the interval layer and the cap layer. By adopting the resonance tunneling structure through the coupling-tunneling effect of the semiconductor quantum point layer and the quantum well layer, the problems of low initial spin polarization rate and high spin loss caused by energy relaxation in a barrier layer material in the prior art are solved.
Description
Technical field
The present invention relates to quasiconductor applied technical field, specifically a kind of optical spin injecting structure based on tunneling effect
And method for implanting.
Background technology
With the development of modern information technologies, device size is less and less, and quantum effect becomes more and more significant, mole fixed
Rule receives greatly challenge.Spintronics is explored in the devices using the spin attribute of electronics while entering the place of row information
Reason and storage.The interaction of traditional electronics device electric charge can be in electron volts magnitude, and the interaction spinned can be milli
Electron volts magnitude, therefore self-spining device has lower power consumption than traditional devices.With III-V compound semiconductor material preparation
Self-spining device can be connected with conventional semiconductor processing, without the need for laying production line again, therefore be the focus of research.
At present spin injection method is divided into two classes substantially in semiconductor-quantum-point:
Electricity injection method：The carrier of spin polarization is injected by magnetic pole material electricity.
Optics injection method：It is produced from barrier layer, soakage layer or quantum dot by left-handed either dextropolarization laser
The carrier or exciton of rotation polarization.
Because barrier layer volume is much larger than in soakage layer and quantum dot volume, therefore existing optics injection method, generally swash
Carrier or exciton that barrier layer produces sufficient spin polarization are sent out, the carrier or exciton of these spin polarizations is in experience phonon
It is transferred in quantum dot after the energy relaxation of auxiliary.But the heavy hole in barrier layer and light hole degeneracy of energy level, carrier
Polarizability is limited by optical selection rule, only up to reach 50%, and polarized carriers are turning from barrier layer to quantum dot
Also obvious spin relaxation, therefore the observable spin polarizability one from quantum dot photoluminescence spectrum can be produced during shifting
As be less than 35%.
Existing patent documentation CN101562213A discloses a kind of optical spin injection method, and its structure is as shown in Figure 1.Bag
Substrate is included, and cushion, active layer, resonant tunneling structure, light absorbing zone, the electronic blocking grown successively on substrate layer
Layer, heavily doped layer.The thickness of the light absorbing zone in the technical scheme is sufficiently thick, so could build up number by optical absorption
The electronics of the spin polarization of amount, what the quasi- Fermi surface of the different electronics of spin orientation can divide relatively opens, it is ensured that common with SQW
Only a kind of electronics of spin orientation can be gone out with resonance tunnel-through when shaking, and raising is tunneling to the spin polarization of the electronics of active area
Degree.Because in semiconductor-quantum-point and its soakage layer or SQW, heavy hole and light hole degeneracy of energy level are released, carrier
Polarizability can reach 100%, and because the spin loss that phonon auxiliary energy relaxation causes also reduces, therefore can be
Efficient spin injection is produced in SQW and quantum dot.But Stranski-Krastanov (S-K) growth pattern is formed
Semiconductor-quantum-point and its soakage layer volume all very littles, the polarized carriers or exciton quantity produced by resonant excitation are serious
Deficiency, thus can cause spin polarized optical signal faint, and in barrier layer light excite generation carrier or exciton it is initial
Polarizability is less than 50%, it is therefore desirable to which a kind of method produces expeditiously injection spin in semiconductor-quantum-point.
The content of the invention
The technical problem to be solved is optical spin injecting structure of the prior art and method for implanting, potential barrier
The low polarized carriers produced with semiconductor-quantum-point, soakage layer of layer spin polarizability or exciton lazy weight, so as to provide one
Plant optical spin injecting structure and method for implanting.
To solve above-mentioned technical problem, the present invention provides below scheme：
The present invention provides a kind of optical spin injecting structure, including substrate layer and grow successively on the substrate layer it is slow
Rush layer, resonant tunneling structure layer and cap layers；The resonant tunneling structure layer is followed successively by along the direction of growth：Quantum well layer, interval
Layer, quantum dot layer；Or quantum dot layer, wall, quantum well layer；The lattice paprmeter of wherein described quantum dot layer is slow more than described
Rush the lattice paprmeter of layer, the wall and the cap layers.
Further, the quantum dot layer is In0.5Ga0.5As quantum dots are with the growth pattern of Stranski-Krastanov
Growth is formed, and thickness is less than or equal to 20nm.
Further, the thickness of the quantum dot layer is 1.5-2.0nm.
Further, the thickness of the quantum dot layer is 1.8nm.
Further, the quantum well layer is In0.1Ga0.9As Material growths are formed, and thickness is less than or equal to 100nm.
Further, the thickness of the quantum well layer is 20nm.
Further, the energy gap of the cushion, the wall and the cap layers is all higher than described
In0.5Ga0.5The energy gap of As quantum dots and the In0.1Ga0.9The energy gap of As materials.
Further, the thickness of the wall is 2-15nm.
Further, the thickness of the wall is 2nm.
The present invention also provides a kind of optical spin injection method based on above-mentioned optical spin injecting structure, including as follows
Step：
S1：Quantum well layer in the optical spin injecting structure is excited using circularly polarized laser, spin polarization is produced
Carrier or exciton；
S2：The carrier or exciton of the spin polarization passes through resonance tunnel-through and energy relaxation exciting into quantum dot layer
State energy level and ground state level, and there is radiation recombination formation circularly polarized light.
Further, in step S1, the laser is continuous laser or pulse laser, the laser for left-handed or
The circularly polarized light of dextrorotation, and the wavelength of the laser is 830-880nm.
Further, in step S1, laser energy of the laser when exciting is greater than or equal in quantum well layer
Electronics and hole ground state energy difference, while less than the forbidden band width of the cushion, the wall and the cap layers
Degree.
The above-mentioned technical proposal of the present invention has compared to existing technology advantages below：
（1）Optical spin injecting structure of the present invention, resonant tunneling structure therein includes quantum well layer, wall
And quantum dot layer.Using circularly polarized laser produce in semiconductor quantum well abundant amount and spin high degree of polarization carrier or
Exciton, it is ultrafast, efficiently in semiconductor-quantum-point by the coupling-tunneling effect of semiconductor-quantum-point layer and quantum well layer
The carrier or exciton of injection spin polarization, solves in prior art that initial spin polarizability in abarrier layer material is low and energy
Serious problem is lost in the spin that relaxation causes.
（2）Optical spin injecting structure of the present invention, the quantum dot layer is In0.5Ga0.5As quantum dots with
The growth pattern of Stranski-Krastanov grows to be formed, and thickness is less than or equal to 20nm, and the quantum well layer is
In0.1Ga0.9As Material growths are formed, and thickness is less than or equal to 100nm.Also, the cushion, the wall and the cap
The energy gap of layer is all higher than the In0.5Ga0.5The energy gap of As quantum dots and the In0.1Ga0.9The forbidden band of As materials
Width.In can be made using above-mentioned setting0.1Ga0.9The ground state level of carrier or exciton in the SQW that As materials are formed is high
In In0.5Ga0.5As materials formed quantum dot in carrier or exciton ground state level, and the carrier in SQW or
Exciton can form electronics coupled so as to realize resonance tunnel-through with the excited level of quantum dot.
（3）Optical spin injecting structure of the present invention, the wall is GaAs materials, and its thickness is 2-20nm,
Arranged by above-mentioned thickness and ensure that there is certain interval between quantum well layer and quantum dot layer.Additionally, it is preferred that the interval
The thickness of layer is 2-15nm, in below 15nm, ensure that the stiffness of coupling and current-carrying between quantum well layer and quantum dot layer
The tunnelling probability of son or exciton, realizes the fast and efficiently spin injection of below 20ps.
（4）Optical spin injection method of the present invention, using circularly polarized laser the optical spin injection knot is excited
Quantum well layer in structure, produces the carrier or exciton of spin polarization, these carriers or exciton by resonance tunnel-through and
Energy relaxation enters In0.5Ga0.5Simultaneously there is radiation recombination formation circularly polarized light in the excited state and ground state level of As quantum dots.Due to
Excitation laser photon energy is greater than or equal to the electronics in quantum well layer and the difference of the ground state energy in hole, while being less than described
The energy gap value of cushion, the wall and the cap layers.So as in In0.1Ga0.9High degree of polarization is produced in As SQWs
Carrier or exciton, realized from In using tunneling effect0.1Ga0.9As SQWs are to In0.5Ga0.5The high efficiency of As quantum dots
Spin injection.
Description of the drawings
In order that present disclosure is more likely to be clearly understood, below in conjunction with the accompanying drawings, the present invention is made further in detail
Thin explanation, wherein,
Fig. 1 is a kind of schematic diagram of optical spin injecting structure in this prior art；
Fig. 2 is one of schematic diagram of optical spin injecting structure described in an embodiment of the present invention；
Fig. 3 is two of the schematic diagram of optical spin injecting structure described in an embodiment of the present invention；
Fig. 4 is the flow chart of optical spin injection method described in an embodiment of the present invention；
Fig. 5 is one of principle explanatory diagram of optical spin injection method described in an embodiment of the present invention；
Fig. 6 is the two of the principle explanatory diagram of optical spin injection method described in an embodiment of the present invention；
Fig. 7 is In in the optical spin injecting structure and method for implanting for adopt one embodiment of the invention0.1Ga0.9As quantum
Well layer and In0.5Ga0.5The relation of luminescence generated by light circular polarization and space layer in As quantum dot layers.
Reference is expressed as in figure：1- substrate layers, 2- cushions, 3- quantum well layers, 4- walls, 5- quantum dot layers,
51- soakage layers, 52- quantum dots, 6- cap layers, the carrier or exciton of 7- spin polarizations, 701- quantum well layers luminescence generated by light circle is inclined
The relation of the relation of degree of shaking and space layer, 702- quantum dot layer luminescence generated by light circular polarizations and space layer, 8- circles are inclined
Shake laser, 9- quantum dot light photoluminescences, 10- tunneling injections direction.
Specific embodiment
Embodiment 1
The present embodiment provides a kind of optical spin injecting structure, as shown in Figure 2 and Figure 3, including substrate layer 1 and in the lining
Cushion 2, resonant tunneling structure layer and the cap layers 6 grown successively on bottom 1.The resonant tunneling structure layer is along the direction of growth
It is followed successively by：Quantum well layer 3, wall 4, quantum dot layer 5；Or quantum dot layer 5, wall 4, quantum well layer 3；Wherein described amount
Lattice paprmeter of the lattice paprmeter of son point layer 5 more than the cushion 2, the wall 4 and the cap layers 6.
In optical spin injecting structure shown in Fig. 2 and Fig. 3, the reversed order of quantum well layer 3 and quantum dot layer 5, current-carrying
The direction of son or exciton is all from quantum well layer 3 to quantum dot layer 5.
Each layer can successively be grown using molecular beam epitaxy or chemical gaseous phase depositing process in the present embodiment.Wherein resonate
Tunneling structure includes quantum well layer 6, wall 4 and quantum dot layer 5.As shown in Fig. 2 quantum dot layer therein 5 includes soakage layer
51 and quantum dot 52.Because the growth course of quantum dot layer 5 must first experience the process of growth soakage layer 51, then in soakage layer
Growth quantum point 52 on 51, therefore soakage layer 51 must be in the lower section of quantum dot 52（Herein described lower section is referred to along growth
The lower section in direction）.Using this resonant tunneling structure by semiconductor-quantum-point layer and the coupling-tunneling effect of quantum well layer,
Solve in prior art that initial spin polarizability in abarrier layer material is low with energy relaxation causes spin loss is serious to ask
Inscribe, and the quantum dot in semiconductor-quantum-point layer and its spin-polarized charge carrier or exciton quantity of soakage layer generation are had
Effect is improved, and the carrier or exciton of spin polarization can be fast and efficiently injected in quantum dot.
In the present embodiment, the quantum dot layer 5 is In0.5Ga0.5As quantum dots are with the growth of Stranski-Krastanov
Pattern growth is formed, and thickness is less than or equal to 20nm.Further, the thickness of the quantum dot layer 5 is 1.5-2.0nm, described
The thickness of quantum dot layer 5 is 1.8nm, and the quantum well layer 3 is In0.1Ga0.9As Material growths are formed, and thickness is less than or equal to
The thickness of 100nm, the preferably quantum well layer 3 is 20nm, the forbidden band of the cushion 2, the wall 4 and the cap layers 6
Width is all higher than the In0.5Ga0.5The energy gap of As quantum dots and the In0.1Ga0.9The energy gap of As materials.Using
Above-mentioned setting can make In0.1Ga0.9Carrier or the ground state level of exciton in the SQW that As materials are formed be higher than
In0.5Ga0.5The ground state level of carrier or exciton in the quantum dot that As materials are formed, and the carrier in SQW or sharp
Son can form electronics coupled so as to realize resonance tunnel-through with the excited level of quantum dot.
The wall 4 is formed for GaAs Material growths, and thickness is 2-20nm, further, the thickness of the wall 4
For 2-15nm, the preferably thickness of the wall 4 is 2nm.The thickness of the wall 4 in below 15nm, the amount of ensure that
The tunnelling probability of stiffness of coupling and carrier or exciton between sub- well layer and quantum dot layer, realizes quick, the height of below 20ps
The spin injection of effect.
The thickness of cushion 2 described in the present embodiment is 400nm；The thickness of the cap layers 6 is 50nm.Due to optical spin
What the substrate layer 1 of injecting structure, cushion 2 and cap layers 6 itself will not produce to injection of spinning affects, therefore its thickness is only needed
Meet requirement when depositing operation and practical application, excessive requirement is not done in the present embodiment.
Embodiment 2
The present embodiment provides a kind of optical spin injection method of the optical spin injecting structure based on described in embodiment 1,
As shown in figure 4, comprising the steps：
S1：Quantum well layer 3 in the optical spin injecting structure is excited using circularly polarized laser, spin polarization is produced
Carrier or exciton；
S2：The carrier or exciton of the spin polarization enters swashing for quantum dot layer 5 by resonance tunnel-through and energy relaxation
State energy level and ground state level are sent out, and radiation recombination occurs and form circularly polarized light.
In wherein described step S1, the laser is continuous laser or pulse laser, and the laser is left-handed or dextrorotation
Circularly polarized light, and the wavelength of the laser be 830-880nm.
In wherein described step S1, laser energy of the laser when exciting is greater than or equal to the electricity in quantum well layer 3
The difference of the ground state energy in son and hole, while less than the forbidden band width of the cushion 2, the wall 4 and the cap layers 6
Degree.
As shown in Figure 5 and Figure 6, the excitation quantum well layer 3 of circularly polarized laser 8, produces the carrier or exciton 7 of spin polarization,
The carrier or exciton 7 of spin polarization is transferred in quantum dot 52, radiation occurs with the excited state and ground state level of quantum dot real
Existing quantum dot light photoluminescence 9, is depicted with arrows the tunneling injection direction of optical spin injecting structure described in the present embodiment in figure
10。
In the present embodiment, the laser can be using CCD or scanning（Sreak）Detector detection is from quantum well layer 3 and amount
The spin polarized spectrum launched in son point 52.From In0.1Ga0.9As quantum well layers and In0.5Ga0.5Detect in As quantum dot layers
Photoluminescence spectrum or Time-Resolved Photoluminescence Spectra, the current-carrying of spin polarization in quantum well layer after laser excitation is obtained respectively
The spin states and spin of son or exciton are injected into the state of carrier in quantum dot layer or exciton, so analyze carrier or
Exciton is from In0.1Ga0.9As quantum well layers are to In0.5Ga0.5The transient state transfer process of As quantum dot layers.As shown in fig. 7, giving
In0.1Ga0.9As quantum well layers and In0.5Ga0.5The relation of luminescence generated by light circular polarization and space layer in As quantum dot layers.Figure
Middle abscissa represents the thickness of wall, and vertical coordinate represents luminescence generated by light circular polarization.As can be seen from the figure the thickness of wall
When spending identical, the luminescence generated by light circular polarization of quantum dot layer and the luminescence generated by light circular polarization of quantum well layer closely, especially
When wall is 2nm, gap is minimum, and the carrier or exciton for illustrating the spin polarization in quantum well layer almost absolutely turns
In having moved to quantum dot layer.It should be noted that the measurement result corresponding to Fig. 7 is obtained for following structure：
In0.1Ga0.9As quantum well layers and In0.5Ga0.5As quantum dot layers are grown using molecular beam epitaxial method, the two thickness point
It is not 20nm and 1.8nm, growth temperature is respectively 520 DEG C and 480 DEG C.
Such scheme in the present embodiment, can excite generation height in quantum well layer（Theoretical value is up to 100%）Spin
The carrier ground state energy difference of carrier ground state in the carrier or exciton, and quantum well layer of polarization and quantum dot layer compared with
It is little, resonance can be formed with excited level in quantum dot layer, it is to avoid the spin loss that energy relaxation causes.And pole of spinning
The carrier or exciton of change is realized fast and efficiently in the semiconductor quantum well and quantum-dot structure of coupling by tunneling effect
Spin injection, reaches close 100% spin injection within 20ps.
Obviously, above-described embodiment is only intended to clearly illustrate example, and not to the restriction of embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need to be exhaustive to all of embodiment.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. a kind of optical spin injection method of optical spin injecting structure, the optical spin injecting structure includes substrate layer
(1) cushion (2), resonant tunneling structure layer and the cap layers (6) for and on the substrate layer (1) growing successively；The resonance
Tunneling structure layer is followed successively by along the direction of growth：Quantum well layer (3), wall (4), quantum dot layer (5)；Or quantum dot layer (5),
Wall (4), quantum well layer (3)；The lattice paprmeter of wherein described quantum dot layer (5) is more than the cushion (2), the interval
The lattice paprmeter of layer (4) and the cap layers (6)；The quantum dot layer (5) is In0.5Ga0.5As quantum dots are with Stranski-
The growth pattern of Krastanov grows to be formed, and thickness is less than or equal to 20nm；Characterized in that, comprising the steps：
S1：The quantum well layer (3) in the optical spin injecting structure is excited using circularly polarized laser, the load of spin polarization is produced
Stream or exciton；
S2：The carrier or exciton of the spin polarization enters exciting for quantum dot layer (5) by resonance tunnel-through and energy relaxation
State energy level and ground state level, and there is radiation recombination formation circularly polarized light.
2. the optical spin injection method of optical spin injecting structure according to claim 1, it is characterised in that the step
In rapid S1, the laser is continuous laser or pulse laser, and the laser is left-handed or dextrorotation circularly polarized light, and described is swashed
The wavelength of light is 830-880nm.
3. the optical spin injection method of optical spin injecting structure according to claim 2, it is characterised in that the step
In rapid S1, laser energy of the laser when exciting is greater than or equal to the electronics in quantum well layer (3) and the Ground State Energy in hole
The difference of amount, while less than the energy gap of the cushion (2), the wall (4) and the cap layers (6).
4. the optical spin injection method of the optical spin injecting structure according to any one of claim 1-3, its feature exists
In in the optical spin injecting structure, the thickness of the quantum dot layer (5) is 1.5-2.0nm.
5. the optical spin injection method of optical spin injecting structure according to claim 4, it is characterised in that the light
In learning spin injecting structure, the thickness of the quantum dot layer (5) is 1.8nm.
6. the optical spin injection method of optical spin injecting structure according to claim 4, it is characterised in that the light
In learning spin injecting structure, the quantum well layer (3) is formed for In0.1Ga0.9As Material growths, and thickness is less than or equal to
100nm。
7. the optical spin injection method of optical spin injecting structure according to claim 4, it is characterised in that the light
In learning spin injecting structure, the thickness of the quantum well layer (3) is 20nm.
8. the optical spin injection method of optical spin injecting structure according to claim 4, it is characterised in that the light
In learning spin injecting structure, described in the energy gap of the cushion (2), the wall (4) and the cap layers (6) is all higher than
The energy gap of the energy gap of In0.5Ga0.5As quantum dots and the In0.1Ga0.9As materials.
9. the optical spin injection method of optical spin injecting structure according to claim 8, it is characterised in that the light
In learning spin injecting structure, the thickness of the wall (4) is 2-15nm.
10. the optical spin injection method of optical spin injecting structure according to claim 9, it is characterised in that described
In optical spin injecting structure, the thickness of the wall (4) is 2nm.
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| CN101195743A (en) * | 2006-12-07 | 2008-06-11 | 中国科学院半导体研究所 | Structure and production method of MnInAs/GaAs containing quantum dot sample having optomagnetic property |
| CN101562213B (en) * | 2008-04-16 | 2010-08-11 | 中国科学院半导体研究所 | Optical spin injection method |
| CN102136535A (en) * | 2010-12-23 | 2011-07-27 | 中国科学院半导体研究所 | High-polarizability spinning injection and detection structure |
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| US5874749A (en) * | 1993-06-29 | 1999-02-23 | The United States Of America As Represented By The Secretary Of The Navy | Polarized optical emission due to decay or recombination of spin-polarized injected carriers |
| CN101195743A (en) * | 2006-12-07 | 2008-06-11 | 中国科学院半导体研究所 | Structure and production method of MnInAs/GaAs containing quantum dot sample having optomagnetic property |
| CN101562213B (en) * | 2008-04-16 | 2010-08-11 | 中国科学院半导体研究所 | Optical spin injection method |
| CN102136535A (en) * | 2010-12-23 | 2011-07-27 | 中国科学院半导体研究所 | High-polarizability spinning injection and detection structure |
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