CN103700723A - 一种硼背场太阳能电池的制备方法 - Google Patents

一种硼背场太阳能电池的制备方法 Download PDF

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CN103700723A
CN103700723A CN201310713821.5A CN201310713821A CN103700723A CN 103700723 A CN103700723 A CN 103700723A CN 201310713821 A CN201310713821 A CN 201310713821A CN 103700723 A CN103700723 A CN 103700723A
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单伟
韩玮智
牛新伟
王仕鹏
黄海燕
陆川
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Chint New Energy Technology Co Ltd
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Abstract

本发明公开了一种硼背场太阳能电池的制备方法，该包括如下步骤：在硅片正面形成绒面；在所述硅片背面进行B离子注入；对所述硅片进行扩散退火；去除磷硅玻璃；在所述硅片正面形成减反膜；在所述硅片背面形成背电极和铝背场；在所述硅片正面形成正电极。采用本发明的方法，可以通过一次高温过程在硅片的背面形成高效硼掺杂p+层，简化了工艺复杂度，提高了太阳能电池的光电转换效率。

Description

一种硼背场太阳能电池的制备方法
技术领域
本发明涉及太阳能电池技术领域，具体地说涉及一种硼背场太阳能电池的制备方法。
背景技术
为了进一步提高硅太阳能电池的光电转换效率，通常会在硅片的背面即背光面制备P+层。P+层可以减少少数载流子在硅片背面复合的概率，也可以作为背面的金属电极。
最常规、最简单地制备p+层的方法即为利用溅射等技术在硅片背面沉积一层铝膜，然后再在800℃～1000℃的温度条件下进行热处理，使铝膜和硅合金化并内扩散，形成一层高铝浓度掺杂的P+层。
由于硅片对于铝的固溶度较低，因此受限制于硅片对铝的固溶度，采用上述方法制备的P+层的掺杂浓度不会很高。而硼离子在硅片中的固溶度要比铝高出很多。因此，如果选择用硼离子对硅片进行背面掺杂，可以达到比铝更好的效果。
虽然在硅片背面进行硼掺杂可以提高掺杂浓度，提高电池效率，但是采用硼掺杂形成P+层也会带来一些弊端，例如：硼扩散工艺需要在1000℃以上的温度下进行，高温工艺不易于控制；硅片在高温过程中会引入新的缺陷，进而导致太阳能电池光电转换效率降低；使用常规硼扩散工艺进行背面硼掺杂，硅片需要分别进行磷（在太阳能电池正面形成P-N结）扩散和硼扩散，而两次扩散过程会导致制造工艺复杂，生产成本高，扩散炉的产量低；而多次的高温过程，会明显降低太阳能电池的光电转换效率。
综上所述，为了增加硅片背面的掺杂浓度，减少少数载流子在硅片背面复合的概率，需要使用硼掺杂来代替现有技术中单纯用铝形成P+层的方法；此外，还需要减少工艺复杂度，使硼掺杂工艺简单、更容易控制，进而提高电池产量，提升太阳能电池的光电转换效率。
发明内容
为了能够采用硼离子注入的方式在硅片背面形成高掺杂浓度的p+层，又能够简化高温操作，避免因高温次数过多而导致的太阳能电池光电转换效率的降低，本发明提供了一种硼背场太阳能电池的制备方法。
根据本发明的一个方面，提供一种硼背场太阳能电池的制备方法，其特征在于，包括如下步骤：
步骤S101，在硅片正面形成绒面；
步骤S102，在所述硅片背面进行B离子注入；
步骤S103，对所述硅片进行扩散退火；
步骤S104，去除磷硅玻璃；
步骤S105，在所述硅片正面形成减反膜；
步骤S106，在所述硅片背面形成背电极和铝背场；
步骤S107，在所述硅片正面形成正电极。
根据本发明的一个具体实施方式，所述步骤S102中，B离子注入的剂量为1010个/cm2～1018个/cm2。
根据本发明的另一个具体实施方式，所述步骤S102中，B离子注入的注入能量大于10KeV。
根据本发明的又一个具体实施方式，所述步骤S102中，采用BF3作为注入源在所述硅片背面进行B离子注入。
根据本发明的又一个具体实施方式，所述步骤S103进一步为：向扩散炉中通入氮气和氧气，持续20min～40min之后，继续向所述扩散炉中通入磷源，持续10min～30min。
根据本发明的又一个具体实施方式，所述扩散炉的温度保持在750℃～950℃。
根据本发明的又一个具体实施方式，所述氮气的通量为5slm～30slm。
根据本发明的又一个具体实施方式，所述氧气的通量为1.8slm～3.0slm。
根据本发明的又一个具体实施方式，所述磷源的通量为1.8slm～2.3slm。
根据本发明的又一个具体实施方式，所述步骤S104为将所述硅片置于清洗槽中，采用槽式清洗去除所述磷硅玻璃。
本发明提供的制备方法中，先通过离子注入法对硅片的背面进行硼离子注入。由于离子注入会对硅片的表面造成一定的损伤，损伤层里面还有大量的非晶态，因此需要对硅片进行高温退火。本发明中，先使硅片在高温条件下，表面形成致密略厚的氧化层；再通入磷源进行磷扩散。由于氧化层的保护，使得磷扩散只能发生在硅片的正面，而无法扩散进入硅片的背面。进而通过一次高温，既去除了硅片背面的损伤层，又在硅片正面形成了磷扩散层。本发明减少了高温操作次数，有效提高了太阳能电池的光电转换效率；此外，由于减少了扩散炉的使用，降低了生产成本，增加了产量。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本发明的其它特征、目的和优点将会变得更明显：
图1为根据本发明提供的一种硼背场太阳能电池的制备方法的一个具体实施方式的流程示意图。
图2为为根据本发明提供的一种硼背场太阳能电池的制备方法的扩散退火步骤的示意图。
附图中相同或相似的附图标记代表相同或相似的部件。
具体实施方式
下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。此外，本发明可以在不同例子中重复参考数字和/或字母。这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施例和/或设置之间的关系。应当注意，在附图中所图示的部件不一定按比例绘制。本发明省略了对公知组件和处理技术及工艺的描述以避免不必要地限制本发明。
参考图1，图1为根据本发明提供的一种硼背场太阳能电池的制备方法的一个具体实施方式的流程示意图。
步骤S101，在硅片正面形成绒面。制绒的结果使入射光在表面多次反射，增加了光的吸收，提高了太阳能电池的短路电流和转换效率。绒面的制备可采用化学腐蚀法，如使用各类酸、碱等化学药品来实现；或通过干法制绒，如反应离子刻蚀（RIE）、激光刻蚀等。常用的碱性溶液例如：氢氧化钠，氢氧化钾、氢氧化锂和乙二胺等。通常单晶硅使用廉价的浓度约为1%的氢氧化钠稀溶液来制备绒面，腐蚀温度为70-85℃。为了获得均匀的绒面，可选的，还可在溶液中酌量添加醇类如乙醇和异丙醇等作为络合剂。
步骤S102，在所述硅片背面进行B离子注入。优选的，采用BF3作为硼（B）源。可选的，B离子的注入剂量为1010个/cm2～1018个/cm2，例如：1010个/cm2，1015个/cm2或1018个/cm2。可选的，注入能量大于10KeV，例如：10KeV，15KeV或25KeV。硼离子注入硅片深度由注入能量决定，可通过调整注入能量的大小获得所需的注入深度。经过高能量离子注入后，会在硅片的背面形成所需的硼掺杂，但是在离子注入的过程中，会对硅片的表面造成一定的损伤，损伤层里面含有大量的非晶态，硅片表面非晶化非常严重。
为了除去损伤层，需要继续执行步骤S103，对硅片进行退火，同时，在高温下，进行磷扩散，形成P-N结。
将硅片放入扩散炉，扩散炉的温度保持在750℃～950℃，例如可以为：750℃，850℃或950℃。向扩散炉中通入氮气和氧气，持续20min～40min，例如：20min，30min或40min。优选的，通入扩散炉的N2的通量范围为5slm～30slm，例如：5slm、18slm或30slm。优选的，通入扩散炉的O2的通量范围为1.8slm～3.0slm，例如：1.1slm、1.2slm或1.4slm。
如图2所示，在通入氧气和氮气，并持续了20min～40min之后，保持温度不变的条件下，继续向所述扩散炉中通入磷源，也就是说，同时向扩散炉中通入氮气、氧气和磷源。
通入磷源后，需要持续10min～30min，例如：10min，15min或30min。磷（P）扩散可采用以POCl3为磷源在硅片正面进行P的热扩散。还可以先在硅片的正面喷涂磷酸或其他含磷的掺杂源，然后通过快速热退火（Rapid ThermalAnealing）处理，同时完成硅片的正面P扩散。
由于步骤S102的硼扩散过程导致硅片背表面非晶化严重，因此，在高温条件下，先向扩散炉中通入氧气和氮气，而不通入磷源，对硅片进行高温氧化退火，使硅片表面形成一层非常致密、且略厚的氧化层；再通入磷源进行磷扩散。由于硅片背面受到氧化层的保护，磷不能扩散进入硅的背表面，仅仅在硅片的正表面完成磷扩散，这样就在一次高温操作下形成了正面磷掺杂、背面硼掺杂的硅片结构。
之后执行步骤S104，去除磷硅玻璃（Phospho Silicate Glass，PSG）。优选的，将所述硅片置于清洗槽中，采用槽式清洗法去除磷硅玻璃。根据一个具体实施方式，把硅片放在腐蚀性溶液（如氢氟酸、氢氧化钠等各类酸/碱或有机溶液）中浸泡，去除扩散制结后在硅片表面形成的一层PSG和周边的P扩散层。
步骤S105，在所述硅片正面形成减反膜。沉积减反膜可以采用本领域技术人员熟知的各种常规方法。优选的，将硅片置于氢气气氛的管式PECVD炉中，退火；然后将炉管抽真空至0Pa～50Pa，去除残余气体；恒定压强，充入硅烷和氨气，沉积氮化硅（SiNx）减反膜。
步骤S106，在所述硅片背面形成背电极和铝背场。铝背场具有钝化和反型的功能，可进一步降低载流子复合，提高少子寿命，提高电池效率。通过丝网印刷的方法在硅片的背面印刷一层铝浆，然后烧结即可形成铝背场。
步骤S107，在所述硅片正面形成正电极。可选的，上述背电极和/或正电极可采用印刷或者电镀的方式制备。
采用本发明的硼背场高效电池的制备方法，简化了太阳能电池制备的工艺，降低了生产成本，提高了产量；且极大地提高了太阳能电池的光电转换效率。
虽然关于示例实施例及其优点已经详细说明，应当理解在不脱离本发明的精神和所附权利要求限定的保护范围的情况下，可以对这些实施例进行各种变化、替换和修改。对于其他例子，本领域的普通技术人员应当容易理解在保持本发明保护范围内的同时，工艺步骤的次序可以变化。
此外，本发明的应用范围不局限于说明书中描述的特定实施例的工艺、机构、制造、物质组成、手段、方法及步骤。从本发明的公开内容，作为本领域的普通技术人员将容易地理解，对于目前已存在或者以后即将开发出的工艺、机构、制造、物质组成、手段、方法或步骤，其中它们执行与本发明描述的对应实施例大体相同的功能或者获得大体相同的结果，依照本发明可以对它们进行应用。因此，本发明所附权利要求旨在将这些工艺、机构、制造、物质组成、手段、方法或步骤包含在其保护范围内。

Claims (10)

1.一种硼背场太阳能电池的制备方法，其特征在于，包括如下步骤：
a）在硅片正面形成绒面；
b）在所述硅片背面进行B离子注入；
c）对所述硅片进行扩散退火；
d）去除磷硅玻璃；
e）在所述硅片正面形成减反膜；
f）在所述硅片背面形成背电极和铝背场；
g）在所述硅片正面形成正电极。
2.根据权利要求1所述的制备方法，其特征在于，所述步骤b）中，B离子注入的剂量为1010个/cm2～1018个/cm2。
3.根据权利要求1所述的制备方法，其特征在于，所述步骤b）中，B离子注入的注入能量大于10KeV。
4.根据权利要求1所述的制备方法，其特征在于，所述步骤b）中，采用BF3作为注入源在所述硅片背面进行B离子注入。
5.根据权利要求1所述的制备方法，其特征在于，所述步骤c）进一步为：向扩散炉中通入氮气和氧气，持续20min～40min之后，继续向所述扩散炉中通入磷源，持续10min～30min。
6.根据权利要求5所述的制备方法，其特征在于，所述扩散炉的温度保持在750℃～950℃。
7.根据权利要求5所述的制备方法，其特征在于，所述氮气的通量为5slm～30slm。
8.根据权利要求5所述的制备方法，其特征在于，所述氧气的通量为1.8slm～3.0slm。
9.根据权利要求5所述的制备方法，其特征在于，所述磷源的通量为1.8slm～2.3slm。
10.根据权利要求1所述的制备方法，其特征在于，所述步骤d）为将所述硅片置于清洗槽中，采用槽式清洗去除所述磷硅玻璃。
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