CN103681262B - A kind of preparation method of height charge balance superjunction devices - Google Patents
A kind of preparation method of height charge balance superjunction devices Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
Abstract
The present invention relates to a kind of preparation method of height charge balance superjunction devices, belong to the preparation method of semiconductor devices, prepare superjunction devices, one end of superjunction devices is connected with test equipment, the quantity of electric charge in test equipment detection superjunction devices in the quantity of electric charge and n posts area in p posts area, the difference in change of the quantity of electric charge in the quantity of electric charge in p posts area and n posts area in superjunction devices, a certain amount of alms giver or acceptor impurity are introduced by superjunction devices by semiconductor transmutation doping method, makes the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area in superjunction devices equal.After a certain amount of alms giver or acceptor impurity are introduced superjunction devices by semiconductor transmutation doping method, due to generating defect in a semiconductor material, therefore the life-span of carrier can be greatly reduced the present invention, accelerate the operating rate of device.Namely life control has been carried out while doping is irradiated.
Description
Technical field
The invention belongs to the preparation method of semiconductor devices, more particularly to a kind of making of height charge balance superjunction devices
Method.
Background technology
Superjunction：（Super Junction）The theoretical marrow of superjunction is charge balance concept, and charge complementary is former in other words
Reason.It is to replace traditional low-doped pressure-resistance structure with the pn-junction structure being alternately arranged.Device is in off state because it is alternately arranged
The pn regions of row mutually exhaust caused by charge balance so that electric-field intensity is held essentially constant when superjunction is passed through so that
Improve the pressure-resistant of device.When device forward conduction, because the doping concentration of super-junction structure is tied much larger than traditional drift region
The doping depth of structure, so that the forward conduction voltage drop of device is greatly reduced.Charge balance refer to charge balance refer to P post region and
The quantity of electric charge in n posts area is equal（Qp=Qn）The quantity of electric charge Qn=NdWn in quantity of electric charge Qp=NaWp, n post area in P post region.Electric charge
Balance also can be described as：NaWp=NdWn.Wherein Na and Nd are the doping concentrations in P post region and n posts area, and Wp and Wn is P post region and n
The width in post area.For charge balance, charge unbalance also can be described as：NaWp≠NdWn.For convenience of description, I
Be divided into two kinds of situations：1. NaWp is worked as>Acceptor is more than alms giver during NdWn；2. NaWp is worked as<Alms giver is more than acceptor during NdWn.
Superjunction IGBT（SJ-IGBT）：The initial of insulated gate bipolar transistor referred to as, a kind of voltage-controlled type power device,
It is commonly used as high-voltage switch gear.Exactly be incorporated into superjunction theory in IGBT by superjunction IGBT, and tradition is replaced with super-junction structure
N-drift areas, so can in the case where device stress levels are not reduced, reduce device dynamic quiescent dissipation.
Hyperconjugation VDMOS（Coolmos）：Super-junction structure is applied in traditional VDMOS, that is, constitutes hyperconjugation VDMOS.This
The distinctive feature of the conception of species is that the doping concentration for not losing n- drift regions in the case of device voltage block capability can be improved
An order of magnitude, will produce horizontal built in field, while also existing from drain-source pressure drop in the pn regions for exhausting each other
Longitudinal electric field, electronics and hole the two direction electric fields combine order about under flow to electrode along respective path.
Semiconductor transmutation doping（nuclear transmutation doping of semiconductor）：With certain
The irradiation material such as the neutron of energy, charged particle or gamma-rays, is generated and not existed originally in the base by the nuclear reaction for selecting
New element, reach the doping purpose of semi-conducting material.At present, only neutron transmutation doping (NDT) is applied.This
The principle of method is that K. clarkes-Horovitz is proposed in nineteen fifty-one.1974 successfully molten to area with nuclear reactor thermal neutron
Silicon carries out nuclear transmutation doping, the first production Neutron transmutation doping silicon of commodity.Current neutron doping silicon single crystal has turned into industry
Product, yield increases year by year.
It is that its structure is difficult to be realized in technique that on the one hand the difficult point that superjunction devices is realized is.On the other hand it is but in reality
Real charge balance is difficult to realize in the manufacturing process on border.But influence of the charge unbalance to super-junction structure is very big.Under
Figure is influence of the charge unbalance for the breakdown voltage of device.As shown in Figure 1, it can be seen that, it is right even if degree of unbalancedness is 5%
It is very serious in the performance degradation of device.
At present, the semiconductor devices of super-junction structure due to its superior property development quickly, but superjunction devices technique realize
It is relatively difficult, it is mainly used in the power device of low pressure at present.Traditional superjunction manufacturing process is that ion implanting or cutting are filled out
Fill.Wherein ion implantation technology mainly includes energetic ion injection and multiple extension repeatedly injects two schemes；Cutting is filled
Technique mainly includes deep reaction ion etching and the multiple cutting of multiple extension refills two schemes.A variety of schemes one above
Aspect technique is extremely complex, so as to improve manufacturing cost.Another aspect is that the control of dopant dose is highly difficult, to produce electricity
The superjunction devices of lotus balance is extremely difficult, from the performance advantage without having given play to superjunction devices completely.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of preparation method of height charge balance superjunction devices, solve
The problem of the charge unbalance of superjunction devices of the prior art.
In order to solve the above technical problems, the invention provides a kind of preparation method of height charge balance superjunction devices, leading to
Semiconductor transmutation doping method is crossed, the irradiation dose of transmutation doping is controlled, alms giver or acceptor impurity is introduced into the superjunction devices,
Make the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area in the superjunction devices equal.
Further, the method for the irradiation dose for controlling transmutation doping is：
The one end for the superjunction devices for preparing is connected with test equipment, spy of the test equipment according to the superjunction devices
Property the change quantity of electric charge that judges in the quantity of electric charge and n posts area in p posts area in the superjunction devices,
Further, the method for the introducing superjunction devices is：
The semiconductor where the superjunction devices is irradiated by neutron irradiation transmutation doping or photic transmuting.
Further, the method for the introducing superjunction devices is：
The p posts area of the superjunction devices is introduced, the n posts area of the superjunction devices is introduced or to the superjunction devices
In the part or all of region in p posts area and n posts area introduce.
Further, the method for being irradiated to the semiconductor where the superjunction devices include by way of mask or
The mode of person's direct write.
Further, the equal method of the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area made in superjunction devices
For：
When semiconductor transmutation doping is carried out to the superjunction devices, the electricity in p posts area in superjunction devices described in real-time adjustment
The quantity of electric charge in lotus amount and n posts area.
Further, the equal method of the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area made in superjunction devices is also
Including：
First the superjunction devices is packaged, then the pipe overall semiconductor transmutation doping after encapsulation adulterates, then
Adjust the quantity of electric charge in the quantity of electric charge and n posts area in p posts area in the superjunction devices.
Further, the equal method of the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area made in superjunction devices is also
Including：
According to the quantity of electric charge in the quantity of electric charge in p posts area and n posts area in the superjunction devices, by semiconductor transmutation doping side
A certain amount of alms giver or acceptor impurity doping are introduced the superjunction devices by method, after after superjunction devices cooling, are detected again
The quantity of electric charge in the superjunction devices in the quantity of electric charge in p posts area and n posts area, according to the quantity of electric charge in p posts area in the superjunction devices
With the quantity of electric charge in n posts area, a certain amount of donor doping or acceptor impurity are adulterated again by semiconductor transmutation doping method
The superjunction devices is introduced, until making the quantity of electric charge in the quantity of electric charge of the P post region in the superjunction devices and N posts area equal.
Further, the superjunction devices is any in superjunction diode, hyperconjugation VDMOS or superjunction IGBT.
The preparation method of a kind of height charge balance superjunction devices that the present invention is provided, by semiconductor transmutation doping method
After a certain amount of donor doping is introduced into superjunction devices, due to generating defect in a semiconductor material, therefore the life-span of carrier
Can be greatly reduced, accelerate the operating rate of device.Namely life control has been carried out while doping is irradiated.
Brief description of the drawings
A kind of super junction device structure schematic diagram that Fig. 1 is provided for prior art；
Fig. 2 is a kind of local method schematic diagram for introducing superjunction devices provided in an embodiment of the present invention；
Fig. 3 is another local method schematic diagram for introducing superjunction devices provided in an embodiment of the present invention；
Fig. 4 is the local method schematic diagram for introducing superjunction devices of another kind that the embodiment of the present invention 4 is provided；
Fig. 5 is the horizontal local method schematic diagram for introducing superjunction devices of another kind that the embodiment of the present invention 5 is provided.
Specific embodiment
A kind of preparation method of height charge balance superjunction devices provided in an embodiment of the present invention, traditionally prepares super
Junction device（Referring to Fig. 1）, by semiconductor transmutation doping method, the irradiation dose of transmutation doping is controlled, alms giver or acceptor is miscellaneous
Matter introduces superjunction devices, makes the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area in superjunction devices equal.
Wherein, the method for the irradiation dose of control transmutation doping can be：
The one end for the superjunction devices for preparing is connected with test equipment, test equipment is sentenced according to the characteristic variations of superjunction devices
The quantity of electric charge in disconnected superjunction devices in the quantity of electric charge and n posts area in p posts area,
Can be point three parts for traditional superjunction devices referring to Fig. 1.Respectively Facad structure, center section, carry on the back
Face structure.Center section is the super-junction structure that is distributed alternately with the second conduction type of the first conduction type mainly as the resistance to of device
Laminate layer, can introduce the second conduction type of a floor height concentration as electric field trapping layer between resistance to nip and collecting zone,.Front
Structure is similar to traditional IGBT to back side knot ditch.Facad structure is the base 715 for first having the first conduction type, and inside is contained
The launch site 713 of the second conduction type.There is an insulator 712 on base and launch site marginal portion, inside includes
Grid 711.The base part transoid of grid 711 can be caused after grid 711 adds current potential, so as to the carrier of launch site can be made
It is injected into drift region.It is another to have emitter metal 714 while being connected with launch site 713 and P- bases 715.Device backside structure be by
The collecting zone 719 of the first conduction type is constituted, wherein, cushion 718 is followed successively by collecting zone 719, on cushion 718 respectively
It is spaced apart by n posts area 716 and p posts area 717.
Theoretical according to charge balance, the quantity of electric charge in p posts area and n posts area is equal can be expressed as Qp=Qn, and Qp is expressed as p
The quantity of electric charge in post area 717, wherein, Qp=NaWp, Qn represents the quantity of electric charge in n posts area 716, wherein, Qn=NdWn.Charge balance
Also can be described as：NaWp=NdWn.The doping in p posts area 717 and n posts area 716 when wherein Na and Nd represent that the quantity of electric charge is balanced respectively
Concentration, Wp and Wn are the width in P post region 717 and n posts area 716, P post region when Na ' and Nd ' represents that the quantity of electric charge is uneven respectively
The doping concentration in 717 and n posts area 716.
Charge unbalance：For charge balance, charge unbalance also can be described as：NaWp≠NdWn.In order to just
In explanation, we are divided into two kinds of situations：1. Na ' Wp are worked as>Represent that acceptor is more than alms giver during Nd ' Wn；2. Na ' Wp are worked as<Applied during Nd ' Wn
It is main to be more than acceptor.
Embodiment 1：
Traditional manufacturing process manufacture underbalance super-junction structure of level is first passed through, one end of superjunction devices and test are set
Standby to be connected, the test equipment detects the quantity of electric charge in the quantity of electric charge and n posts area in p posts area in the superjunction devices,
Wherein, Na ' Wp>Nd ' Wn, illustrate the quantity of electric charge of the quantity of electric charge more than n posts area 716 in p posts area 717, it would be desirable to adulterate
Silicon chip, chip or packaged device be put into nuclear reactor, carry out overall neutron irradiation transmutation doping doping.Introduce dense
It is N to spendNTDDonor impurity.So, in p posts area because impurity compensation, valid density reduce, in n posts area, impurity concentration increases,
As long as the dosage of precise control neutron, it is possible to reach balance (Na '-NNTD)Wp=(Nd’+NNTD)Wn.In nuclear reactor irradiation
Direction of the son without fixation, has all been shaped as uniform transmutation doping and has been added to original dopant profiles in whole device inside
In.Also can use have fixed-direction neutron source carry out overall irradiation, can irradiate simultaneously, it is also possible to scanning and irradiation, can from appoint
Where to being irradiated.
Embodiment 2：
Referring to Fig. 2, traditional manufacturing process manufacture underbalance super-junction structure of level is first passed through, by one end of superjunction devices
It is connected with test equipment, the test equipment detects the quantity of electric charge in the quantity of electric charge and n posts area in p posts area in the superjunction devices, wherein,
Na’Wp>Nd ' Wn, illustrate the quantity of electric charge of the quantity of electric charge more than n posts area 716 in p posts area 717, it is possible to use neutron beam 720 is to mask
Local transmutation doping is carried out, radiation areas are 722, it is N only to introduce concentration in n posts area 716NTDTransmutation doping.Irradiation absorbs
The border of the mask 721 that material makes is corresponding with the border of the first conductivity type regions 717.Led for second in the region for so irradiating
Electric type area 716 is all.The dosage irradiated by precise control so as to reach charge balance, that is, Na ' Wp=(Nd '+
NNTD)Wn。
Embodiment 3：
Referring to Fig. 3, traditional manufacturing process manufacture underbalance super-junction structure of level is first passed through, by one end of superjunction devices
It is connected with test equipment, the test equipment detects the electric charge in the quantity of electric charge and n posts area 716 in p posts area 717 in the superjunction devices
Amount, wherein, Na ' Wp>Nd ' Wn, illustrate that the quantity of electric charge in p posts area 717, more than the quantity of electric charge in n posts area 716, can use neutron irradiation
Transmutation doping carries out local transmutation doping, in certain part in N posts area 716 by way of mask（Width is Wn ', can be with
In any position in n posts area）Introducing concentration is NNTDTransmutation doping.Wherein, the mask 721 that radiation absorbing materials make covers
Cover area includes the whole of the first conductivity type regions 717 and the marginal portion of the second conductivity type regions 716.So irradiate
Region be the part of the second conductivity type regions 716, its radiation areas is neutron beam for 722,720, by precise control spoke
According to dosage so as to reach charge balance, that is to say, that Na ' Wp=ND ' Wn+NNTDWn’。
Embodiment 4：
Referring to Fig. 4, traditional manufacturing process manufacture underbalance super-junction structure of level is first passed through, by one end of superjunction devices
It is connected with test equipment, the test equipment detects the quantity of electric charge in the quantity of electric charge and n posts area in p posts area in the superjunction devices, wherein,
Na’Wp>Nd ' Wn, illustrate that the quantity of electric charge in p posts area, more than the quantity of electric charge in n posts area, can be carried out with neutron irradiation transmutation doping
Local transmutation doping, such as by way of mask or direct write mode only in n posts area 716 and a certain portion in p posts area 717
Point（Doping overall width in n posts area 716 is Wn ', and the doping overall width in p posts area is Wn ", can by unilateral deviation or
It is the above-described doping layout of the accomplished in many ways such as the extension of both sides）Introducing concentration is NNTDTransmutation doping.Wherein, spoke
The overlay area of the mask 721 made according to absorbing material includes a part for the first conductivity type regions 717 and the second conduction
The part at the edge of type area 716.The region of so irradiation is a part and the second conduction type for the first conductive region
The part of region 716,720 is neutron beam, and 722 is radiation areas.The dosage irradiated by precise control is put down so as to reach electric charge
Weighing apparatus, that is, Na ' Wp-NNTDWn”=ND’Wn+NNTDWn’。
Embodiment 5：
Referring to Fig. 5, traditional manufacturing process manufacture underbalance super-junction structure of level is first passed through, by one end of superjunction devices
It is connected with test equipment, the test equipment detects the quantity of electric charge in the quantity of electric charge and n posts area in p posts area in the superjunction devices, wherein,
NA’Wp>ND ' Wn, that is to say, that the quantity of electric charge in p posts area can use neutron irradiation transmutation doping more than the quantity of electric charge in n posts area
Carry out horizontal local transmutation doping, such as by way of mask or direct write mode only super-junction structure layer whole
Or it is N that certain part introduces concentrationNTDTransmutation doping.Impurity can be all introduced in p posts area 717 and n posts area 716, it is also possible to
Impurity only is introduced in all or part of of n posts area 716, can also be part or all of with n posts area 716 in the part in p posts area 717
Introduce impurity.Wherein, the overlay area of the mask 721 that radiation absorbing materials make includes front portion and the back part of device
Point, 720 is neutron beam, and 722 is radiation areas.The region of so irradiation is middle superjunction part.Irradiated by precise control
Dosage so as to reach charge balance.
The specific example of the above five is embodying for inventive concept.Their common thoughts are：For Na ' Wp>
The super-junction structure of Nd ' Wn, that is to say, that be directed to super-junction structure of the quantity of electric charge in p posts area more than the quantity of electric charge in n posts area, can
To introduce the donor doping that doping total amount is Qn=Na ' Wp-Nd ' Wn.These doping can be uniformly introduced whole semiconductor
In, it is also possible to only introduce super-junction structure part.Can all be introduced in p posts area and n posts area, it is also possible to only in the complete of n posts area
Portion or part introduce, and can also be introduced with all or part in n posts area in the part in p posts area.Generally draw in p posts area
Enter the compensating effect that can be adulterated if donor doping, so as to the performance to device has lowered.
Similarly：For Na ' Wp<The super-junction structure of Nd ' Wn, it is Qp=Nd ' Wn-Na ' Wp's that we can introduce doping total amount
Acceptor doping.The impurity of p-type can be formed by high-energy photon transmuting.These doping can be uniformly introduced whole half
In conductor, it is also possible to only introduce super-junction structure part.Can all be introduced in p posts area and n posts area, it is also possible to only in p posts area
All or part of introducing, can also be introduced with all or part in p posts area in the part in n posts area.Generally in n posts area
The compensating effect that can be adulterated if middle introducing donor doping, so as to the performance to device has lowered.
Semiconductor for other materials can also be by this thought to the superjunction devices for making height charge balance.First
The super-junction structure of charge unbalance is obtained, it is then complete by various modes in the semiconductors by neutron transmutation or photic transmuting
Portion or part introduce the impurity of given dose, so as to form the superjunction devices of height charge balance.
The control of dose of radiation can be by feedback control, and side irradiation frontier inspection surveys the change of device parameters, by parameter
Changing Pattern comprehensive descision goes out required irradiation dose.Can go out in wafer and test equipment is linked into by probe extraction lead
The parameter of detection part sample chip, the quantity of electric charge in real-time detection superjunction devices in the quantity of electric charge in p posts area and N posts area, meanwhile,
The difference in change of the quantity of electric charge in the quantity of electric charge in p posts area and n posts area in superjunction devices, will by semiconductor transmutation doping method
A certain amount of donor doping introduces the superjunction devices.
Alternatively, it is also possible to first be packaged the superjunction devices, the pipe after encapsulation is integrally adulterated, according to pipe
The difference in change of the quantity of electric charge in the quantity of electric charge and n posts area in p posts area, is mixed a certain amount of alms giver by semiconductor transmutation doping method
Miscellaneous introducing superjunction devices, by the irradiation dose that the parameter thing for detecting a few sample pipe is really optimal.
For some nuclear reactions, possible half-life period is long, can be according to the quantity of electric charge and n posts in p posts area in superjunction devices
The difference in change of the quantity of electric charge in area, superjunction devices is introduced by semiconductor transmutation doping method by a certain amount of donor doping, is treated
After superjunction devices cooling, the quantity of electric charge in the quantity of electric charge and n posts area in p posts area in superjunction devices is detected again, then further according to super
The difference in change of the quantity of electric charge in junction device in the quantity of electric charge of P post region and n posts area, will be a certain amount of by semiconductor transmutation doping method
Donor doping introduce superjunction devices, make the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area in superjunction devices equal.So
In the case of need irradiate cooling after carry out device parameters measurement again, preferably by multi irradiation, gradually approach poised state.
During regulation of adulterating, if due to controlling the improper dopant for causing actual dopant dose to be more than needs
Amount, so as to make the electric charge of superjunction deviate to another direction again.At this moment can be irradiated by another kind, transmutation doping is formed conversely
The doping of type, compensates to unnecessary doping, so that it reaches charge balance state again.
By after the method for the present invention, due to generating defect in a semiconductor material, therefore the life-span of carrier can be significantly
Decline, accelerate the operating rate of device.Namely life control has been carried out while doping is irradiated.
The present invention is not limited to a certain specific device or specific material.Virtually all of superjunction devices and all
Material can produce accurate charge balance structure with the method for the present invention.Superjunction devices is superjunction diode, superjunction
Any in VDMOS or superjunction IGBT.Initial charge unbalance structure can be controlled artificially in advance, such as led to
Cross control and produce Na ' Wp>Nd ' Wn (or Na ' Wp<Nd ' Wn) structure.Can also be planned to form charge balance originally
Structure, but due to the precision or unstability of technique, Na ' Wp ≠ Nd ' Wn are ultimately resulted in, as Na ' Wp>Nd ' Wn (or Na '
Wp<Nd ' Wn) all it doesn't matter, or which is more to have no knowledge about alms giver's total amount and acceptor's total amount.The electric charge for either how obtaining
Unbalanced construction, the present invention can balance its recovery charge by various transmutation dopings.The transmutation doping in later stage is probably
Realized in any stage for forming unbalanced construction, silicon chip can be adulterated, it is also possible to which packaged chip is mixed
It is miscellaneous, it is also possible in other stages.Because the penetrability of the irradiation particle of transmutation doping is very strong, therefore from after producing device to envelope
Any stage of dress carries out irradiation doping.
It should be noted last that, above specific embodiment is merely illustrative of the technical solution of the present invention and unrestricted,
Although being described in detail to the present invention with reference to example, it will be understood by those within the art that, can be to the present invention
Technical scheme modify or equivalent, without deviating from the spirit and scope of technical solution of the present invention, it all should cover
In the middle of scope of the presently claimed invention.
Claims (2)
1. a kind of preparation method of height charge balance superjunction devices, it is characterised in that by semiconductor transmutation doping method, control
The irradiation dose of transmutation doping processed, the superjunction devices is introduced by alms giver or acceptor impurity, makes the p posts area in the superjunction devices
The quantity of electric charge and n posts area in the quantity of electric charge it is equal；The method of the irradiation dose for controlling transmutation doping is：
The one end for the superjunction devices for preparing is connected with test equipment, the test equipment becomes according to the characteristic of the superjunction devices
Change judges the quantity of electric charge in the quantity of electric charge and n posts area in p posts area in the superjunction devices；It is described introduce superjunction devices method be：
The semiconductor where the superjunction devices is irradiated by neutron irradiation transmutation doping or photic transmuting；It is described to draw
The method for entering superjunction devices is：
The p posts area of the superjunction devices is introduced into, the n posts area of the superjunction devices is introduced into or in the superjunction devices
The part or all of region in p posts area and n posts area introduces；The method irradiated to the semiconductor where the superjunction devices includes logical
Cross the mode of mask or the mode of direct write；Quantity of electric charge phase in the quantity of electric charge and n posts area in the p posts area made in superjunction devices
Deng method be：
When semiconductor transmutation doping is carried out to the superjunction devices, the quantity of electric charge in p posts area in superjunction devices described in real-time adjustment
With the quantity of electric charge in n posts area；State the equal method of the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area made in superjunction devices also
Including：
First the superjunction devices is packaged, then the pipe overall semiconductor transmutation doping after encapsulation is adulterated, then adjust
The quantity of electric charge in the superjunction devices in the quantity of electric charge of P post region and n posts area；The quantity of electric charge in the p posts area made in superjunction devices
The method equal with the quantity of electric charge in n posts area also includes：
According to the quantity of electric charge in the quantity of electric charge in p posts area and n posts area in the superjunction devices, will by semiconductor transmutation doping method
A certain amount of alms giver or acceptor impurity doping introduce the superjunction devices, after after superjunction devices cooling, detect again described
The quantity of electric charge in superjunction devices in the quantity of electric charge in p posts area and n posts area, according to the quantity of electric charge and n posts in p posts area in the superjunction devices
The quantity of electric charge in area, institute is introduced again by semiconductor transmutation doping method by a certain amount of donor doping or acceptor impurity doping
Superjunction devices is stated, until making the quantity of electric charge in the quantity of electric charge and n posts area in the p posts area in the superjunction devices equal.
2. method according to claim 1, it is characterised in that the superjunction devices be superjunction diode, hyperconjugation VDMOS or
Any in superjunction IGBT.
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| CN1056018A (en) * | 1991-03-19 | 1991-11-06 | 电子科技大学 | Semiconductor power device |
| US6346464B1 (en) * | 1999-06-28 | 2002-02-12 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device |
| US6703292B1 (en) * | 1999-07-14 | 2004-03-09 | Koninklijke Philips Electronics N.V. | Method of making a semiconductor wafer having a depletable multiple-region semiconductor material |
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