CN103681170A - Plasma display screen with high discharging efficiency - Google Patents
Plasma display screen with high discharging efficiency Download PDFInfo
- Publication number
- CN103681170A CN103681170A CN201210320909.6A CN201210320909A CN103681170A CN 103681170 A CN103681170 A CN 103681170A CN 201210320909 A CN201210320909 A CN 201210320909A CN 103681170 A CN103681170 A CN 103681170A
- Authority
- CN
- China
- Prior art keywords
- electrode
- dielectric layer
- groove
- header board
- plasma display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Gas-Filled Discharge Tubes (AREA)
Abstract
The invention discloses a plasma display screen with high discharging efficiency, and belongs to the technical field of panel display. A dielectric protecting layer is prepared by adopting a dielectric material with low work functions; the material comprises alkali metals, alkali earth metals and fluorides of rare earth metals, and further comprises hafnium oxide and zirconium dioxide. A groove in the horizontal direction is formed in a front plate transparent dielectric layer outside the gap between front plate electrodes; the minimum value of the thickness of the groove is 1/2 of the thickness of the front plate transparent dielectric layer, and the maximum value is the same as the thickness of the front plate transparent dielectric layer; the distances from the two side edges of the groove to the front plate electrodes are in the range of 20 microns to 40 microns. A high dielectric platform, opposite to the groove in the front plate transparent dielectric layer, is arranged on a back plate dielectric layer outside an addressing electrode in sub-pixels on a back plate; the height of the high dielectric platform is not greater than 3/4 of the height of a barrier and not smaller than 1/2 of the height of the barrier. Compared with the prior art, the plasma display screen with high discharging efficiency has high light emitting efficiency, increases no complexity of structure and production equipment, and is suitable for mass production in batches.
Description
Technical field
The invention belongs to technical field of flat panel display, particularly there is the plasma display panel (PDP) of high discharging efficiency.
Background technology
In the competition with LCD TV, plasma television is at a disadvantage.Because power consumption is large and colour temperature is low, the price advantage in addition progressively losing, occurs that this situation is exactly very natural.From Development Trends, the possibility that plasma television is withdrawn from the market is completely very large.
The outlet of plasma television is to solve the shortcoming of self performance aspect, brings into play greatly dynamic property and 3D effect good, and the advantages such as eyefidelity height reduce production costs simultaneously as far as possible.This wherein the most important be to reduce power consumption, the power consumption of especially full HD TV, and the prerequisite that reduces plasma television power consumption is to reduce the power consumption of plasma display panel (PDP) (PDP).
The luminous efficiency of plasma display panel (PDP) is allocated as follows: gas discharge efficiency about 10%, ultraviolet ray receiving efficiency about 60%, vacuum ultraviolet is to the energy efficiency approximately 30% of the photon conversion of visible ray, be radiated the visible ray ratio 50% of glass front plate, glass front plate transmitance 90%, overall efficiency is approximately 0.8%, and luminous efficiency is 2.5 lumens/watt.Because ultraviolet receiving efficiency, photon switching energy efficiency and glass front plate transmitance etc. do not have the leeway of improving, people mainly pay close attention to the raising of discharging efficiency.
According to the PDP way for development line chart of external many leading companys, before 20 years, its efficiency just should reach the level of 7 lumens/watt, and to this day, commercially available prod does not also reach 1/3 of desired value.Early stage people place the hope of raising the efficiency to improve arc chamber and electrode structure on, but this raising is limited, brings up at the most the level of 2 lumens/watt.In current raising discharge gas, xenon ratio has seemed into the unique method of raising the efficiency, although this method is effective, the secondary electron yield of xenon ion is too low, causes driving voltage to improve, and has formed key constraints.Increase for fear of driving voltage because of xenon ratio too improves; someone adopts magnesium oxide calcium or magnesium oxide strontium protective layer to improving secondary emissionratio; but the raising that this measure causes whole efficiency only 15%; can't resolve root problem, and wherein also there is the mistake of many understanding aspect in this.
Therefore in the PDP of ordinary construction, Ions Bombardment is very serious, deposits the film of the material that this resistance to Ions Bombardment ability of one deck magnesium oxide is the strongest on dielectric layer, and protective dielectric layer is by Ions Bombardment, and claims that this layer film is medium protective layer.Because magnesium oxide has strong absorption to the vacuum ultraviolet of discharge generation, if therefore have more magnesium oxide to be sputtered, will be deposited on phosphor surface, cause ultraviolet utilance significantly to decline, luminous efficiency can reduce very soon; This is the low and short main cause of life-span of early stage PDP efficiency.In the present invention, the magnesium oxide medium protective layer extensively adopting is changed into and has the metal fluoride of high secondary electron yield.Because the resistance to Ions Bombardment ability of metal fluoride is well below alkaline earth oxides such as magnesium oxide or calcium oxide magnesium, must reduce Ions Bombardment.In the present invention, adopt xenon or Krypton solution Ions Bombardment problem at high proportion.Analysis shows, when xenon or Krypton ratio surpass 50%, Ions Bombardment will significantly reduce.Adopt pure xenon, pure Krypton or xenon krypton mist, Ions Bombardment is reduced to zero substantially.Because the beryllium fluoride in alkali earth metal fluoride, magnesium fluoride and calcirm-fluoride do not absorb vacuum ultraviolet substantially, even if exist certain Ions Bombardment to cause a certain amount of metal fluoride deposition, also can not cause the reduction of efficiency.
In the present invention; the function that is arranged on that layer said medium protective layer in conventional PDP on dielectric layer has been no longer that protective dielectric layer is not subject to Ions Bombardment, but purely improves secondary electron yield, therefore; no longer be called medium protective layer below, but be called secondary electron emission layer.Adopt after above-mentioned measure, luminous efficiency improves several times, and the secondary electron emission layer with high secondary electron yield causes driving voltage substantially not improve, and even reduces.
Summary of the invention
Technical scheme of the present invention is as follows:
The plasma display panel (PDP) with high discharging efficiency, by front and rear panels through sealing-in, discharge air, be filled with inert gas and form.Fig. 1 is end view, clear in order to represent, rear plate has rotated 90 degree with respect to header board, and Fig. 2 is its front view.Header board comprises front glass sheet (10), is arranged on header board front plate electrodes on glass, covers header board transparent dielectric layer (15) and secondary electron emission layer (16) in front plate electrodes.Front plate electrodes comprises transparent scanning show electrode (11) and the bus electrode (12) thereof that is called as X electrode and transparent show electrode (13) and the bus electrode (14) thereof that is called as Y electrode.Rear plate comprises rear glass sheet (110), be arranged on the addressing electrode that is called as A electrode (111) on rear glass sheet, be arranged on glass sheet surface on A electrode and after covering rear plate dielectric layer (112), be positioned at the barrier (113) on rear plate dielectric layer.On rear plate, by barrier, cut apart and formed primary color sub-pixels, apply primary colours phosphor powder layer (114,115,116) in primary color sub-pixels flute surfaces, each pixel is combined by primary color sub-pixels, and Pixel arrangement forms display line.Technical characterictic of the present invention is, the material that described secondary electron emission layer adopts comprises the fluoride of alkali metal, alkaline-earth metal and rare earth metal, also comprises hafnium oxide and zirconium dioxide; The material adopting with described secondary electron emission layer adapts, press atom number than calculating, in this plasma display panel (PDP), be filled with content that xenon and Krypton be combined and surpass 50% inert gas as working gas, all the other compositions are other inert gas beyond xenon and Krypton; Adapt with described working gas, the groove (17) of an along continuous straight runs is set on the header board transparent dielectric layer of the gap location between X electrode and Y electrode, and the cross section of groove is trapezoidal (as shown in Fig. 3 c, the f) that rectangle (as shown in Fig. 3 a, d), trapezoidal (as shown in Fig. 3 b, e) or side are camber line; The minimum value of gash depth is 1/2nd of header board transparent medium layer thickness, and maximum is identical with header board transparent medium layer thickness, and the distance range between two sides of groove and X electrode and Y electrode is 20 microns to 40 microns.In sub-pixel on rear plate, on rear plate dielectric layer outside A electrode, and on the position corresponding with groove on header board transparent dielectric layer, a high platform of medium (117) is set, it is highly not more than 2/3 of barrier height, its shape comprises round platform, cylinder, elliptical table, cylindroid, terrace with edge and prism, this high platform is identical with barrier material, and adopts same process to prepare simultaneously, simultaneously the fluorescent material of the corresponding sub-pixel of its surface coverage.Because the high platform of this medium has higher relative dielectric constant (being greater than 6), can strengthen the electric field of its external space, reduce A electrode addressing voltage.
Described alkali metal, alkaline-earth metal and rare earth metal comprise lithium, sodium, potassium, beryllium, magnesium, calcium, strontium, barium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium.
The composition that comprises metal described in one or more in the fluoride of described alkali metal, alkaline-earth metal and rare earth metal.
The composition that comprises metal described in one or more in the fluoride of described alkali metal, alkaline-earth metal and rare earth metal also comprises the metal ingredient beyond one or more alkali metal, alkaline-earth metal and rare earth metal simultaneously.
Between described X electrode and Y electrode, adopt uniform gap and symmetrical structure, described symmetrical structure refers to the both sides up and down that X electrode and Y electrode are symmetricly set on the groove of along continuous straight runs; As shown in Figure 4, from above, A electrode is minimum the passing through from the gap between X electrode and Y electrode vertically, and the high platform of described medium is minimum place, the gap between X electrode and Y electrode also; The electrode at minimum place, gap comprises rectangular configuration (421,422), trapezium structure (423,424), outer triangular structure (425,426), interior triangular structure (427,428), outer arcuate structure (429,4210) and arc structure (4211,4212).
Between described X electrode and Y electrode, adopt non-homogeneous gap and unsymmetric structure, described unsymmetric structure refers to X electrode and Y electrode and not take the groove of along continuous straight runs and be symmetrical arranged up and down as symmetry axis; As shown in Figure 5, from above, A electrode is minimum the passing through from the gap between X electrode and Y electrode vertically, and the high platform of described medium is minimum place, the gap between X electrode and Y electrode also; The electrode at minimum place, gap comprises rectangular configuration (522), trapezium structure (524), outer triangular structure (526), interior triangular structure (528), outer arcuate structure (5210) and arc structure (5212).
Because during addressing igniting, Y electrode is as negative electrode, X electrode is as anode, and these structures are arranged on cathode surface can form stronger surface field, is conducive to reduce firing voltage.
The present invention is applicable to the rectangular pixels structure that primary colours pixel is arranged in parallel, and is also applicable to the structure that primary colours pixel is triangularly arranged.As shown in Figure 6, the structure that in described plasma display panel (PDP), primary colours pixel is triangularly arranged, the bus electrode (64) of the bus electrode of X electrode (62) and Y electrode presents broken line structure along tortuous barrier (613).X electrode (61) and Y electrode (63) adopt uniform gap and symmetrical structure, and X electrode (61) is arranged on the both sides up and down of its bus electrode (62), and Y electrode (63) is arranged on the both sides up and down of its bus electrode (64).It is symmetry axis that X electrode and Y electrode be take the groove (17) of described along continuous straight runs, is symmetrical arranged up and down, and the high platform of described medium (117) is arranged on the center of sub-pixel, corresponding with the groove of along continuous straight runs on header board.
Shown in Fig. 7, in described plasma display panel (PDP), primary colours pixel is triangularly arranged, and the bus electrode (64) of the bus electrode of X electrode (62) and Y electrode presents broken line structure along tortuous barrier (613).X electrode (71) and Y electrode (73) adopt non-homogeneous gap and symmetrical structure, and X electrode (71) is arranged on the both sides up and down of its bus electrode (62), and Y electrode (73) is arranged on the both sides up and down of its bus electrode (64).It is symmetry axis that X electrode and Y electrode be take the groove (17) of described along continuous straight runs, is symmetrical arranged up and down, and the high platform of described medium (117) is arranged on the center of sub-pixel, corresponding with the groove of along continuous straight runs on header board.
Described barrier can adopt dielectric material preparation, also can adopt metal material preparation.If employing dielectric material,, after prepared by rear plate dielectric layer, sequential system is for barrier.If employing metal material, is that the barrier that etches groove is fixed on rear plate dielectric layer, then carries out processing step below.
In the present invention, adopt xenon or Krypton at high proportion, even pure xenon or pure Krypton are working gas, and in order to reduce firing voltage, before catching fire, electric field strength should be not less than 60 volts/meter handkerchiefs with the ratio of pressure.Reach this value, the equivalent distances between X electrode and Y electrode should not be greater than 50 microns, and the fluted dielectric layer of tool can reach this requirement completely.Groove between X electrode and Y electrode on dielectric layer is to improve discharging efficiency, the basic place that reduces driving voltage.
The groove arranging on dielectric layer can make the lower voltage between X electrode and Y electrode, but can not reduce the addressing voltage of A electrode, and high addressing voltage is flagrant equally, and solution to this problem is that a high platform of medium is set in sub-pixel.The dielectric constant of the high platform of medium is greater than 5, and electric field is wherein very weak, and its effect distance between A electrode and X electrode, Y electrode that has been equivalent to further, causes the reduction of addressing voltage naturally.In sum, the high platform in the groove in dielectric layer and sub-pixel need to arrange simultaneously, indispensable.
The fluoride of the alkali metal adopting in the present invention, alkaline-earth metal and rare earth metal is secondary electron emission layer, and does not adopt the magnesian reason that resistance to Ions Bombardment ability is strong as follows.Adopting the inert gas of xenon at high proportion or Krypton is working gas, when xenon ratio surpasses 50%, as long as the ratio of electric field strength and air pressure be not more than 100 volts/(rice handkerchief), xenon ion or the krypton ion drift kinetic energy in electric field equals the energy of warm-up movement substantially, the bombardment on target surface can be ignored, and can not consider the resistance to Ions Bombardment ability of secondary electron emission layer.Because the secondary electron yield of xenon ion and krypton ion is well below other inert gas ion, must adopt the material with high secondary electron yield is secondary electron emission layer, and the fluoride of alkali metal, alkaline-earth metal and rare earth metal all possesses this characteristic.Alkali metal, alkaline-earth metal and rare earth metal all belong to active metal, different from the oxide of active metal, and the fluoride of active metal is generally stable in air, and this is also to adopt one of its reason for secondary electron emission layer.In the fluoride of all active metals, the fluoride of alkaline-earth metal has the highest secondary emissionratio.The crystal structure of the fluoride of alkaline-earth metal is cubic crystal, is specially CaF structure, in 111 crystal orientation, is layer structure.Fluorine atom obtains an electronics from alkaline-earth metal, forms stable full shell structure, there is no interfacial state energy level completely, therefore possesses minimum work function and the highest secondary electron yield.Therefore hafnium oxide and zirconium dioxide have identical crystal structure with calcirm-fluoride, also Presence of an interface state energy level not.
The present invention compared with prior art, has the following advantages and high-lighting effect: it is high that the present invention not only has luminous efficiency, and does not increase structure and preparation technology's complexity, is applicable to large-scale production.
Accompanying drawing explanation
Fig. 1 is the end view of plasma display panel (PDP) provided by the invention, and wherein the relative position between header board and rear plate has rotated an angle of 90 degrees.
In figure: glass sheet before 10-, 11-X electrode, the bus electrode of 12-X electrode, 13-Y electrode, the bus electrode of 14-Y electrode, 15-header board transparent dielectric layer, 16-secondary electron emission layer, the groove of along continuous straight runs on 17-header board transparent dielectric layer, glass sheet after 110-, 111-A electrode, plate dielectric layer after 112-, 113-barrier, 114,115,116-primary colours phosphor powder layer, the high platform of medium after 117-on plate.
Fig. 2 is the front view of plasma display panel (PDP).
Fig. 3 is the thin portion structure of groove on header board transparent dielectric layer, and the groove (a) and (d) is rectangular configuration, and the groove (b) and (e) is trapezium structure, and the groove (c) and (f) is the trapezium structure that side is arc.
Fig. 4 adopts the electrode structural chart of non-homogeneous interstitial structure between X electrode and Y electrode, symmetrical structure, and the position of rear plate A electrode, barrier and the high platform of medium is also illustrated in wherein.
In figure: 113-barrier, 111-A electrode, the high platform of 117-medium, the rectangular configuration of the little gap location X of 421-electrode, the rectangular configuration of the little gap location Y of 422-electrode, the X electrode trapezium structure of the little gap location of 423-, the trapezium structure of the little gap location Y of 424-electrode, the outer triangular structure of the little gap location X of 425-electrode, the outer triangular structure of the little gap location Y of 426-electrode, the interior three-legged structure of the little gap location X of 427-electrode, the interior triangular structure of the little gap location Y of 428-electrode, the outer arcuate structure of the little gap location X of 429-electrode, the outer arcuate structure of the little gap location Y of 4210-electrode, the arc structure of the little gap location X of 4211-electrode, the arc structure of the little gap location Y of 4212-electrode.
Fig. 5 adopts the electrode structural chart of non-homogeneous interstitial structure between X electrode and Y electrode, unsymmetric structure, and the position of rear plate A electrode, barrier and the high platform of medium is also illustrated in wherein.
In figure: 113-barrier, 111-A electrode, the high platform of 117-medium, the rectangular configuration of the little gap location X of 522-electrode, the trapezium structure of the little gap location Y of 524-electrode, the outer triangular structure of the little gap location Y of 526-electrode, the interior three-legged structure of the little gap location Y of 528-electrode, the outer arcuate structure of the little gap location Y of 5210-electrode, the arc structure of the little gap location Y of 5212-electrode.
Fig. 6 is that primary colours pixel is triangularly arranged, and between X electrode and Y electrode, is the structure chart of uniform gap.
In figure: 61-X electrode, the bus electrode of 62-X electrode, 63-Y electrode, the bus electrode of 64-Y electrode, 111-A electrode, the barrier of 613-meander-like, the high platform of 117-medium.
Fig. 7 is that primary colours pixel is triangularly arranged, and between X electrode and Y electrode, is the structure chart in non-homogeneous gap.
In figure: 71-X electrode, the bus electrode of 62-X electrode, 73-Y electrode, the bus electrode of 64-Y electrode, 111-A electrode, the barrier of 613-meander-like, the high platform of 117-medium.
Embodiment
The plasma display panel (PDP) below the present invention being proposed describes in detail in conjunction with the embodiments:
Embodiment 1:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer, the high platform of medium by photosensitive glass legal system for barrier and sub-pixel center, by mask plate, control sensitization and etching number of times, making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.On glass at the header board with transparent conductive film, with photoetching and lithographic method preparation transparent X electrode and Y electrode as shown in Figure 2, between two electrodes, adopt uniform gap, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.Adopt method for printing screen to prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, the first impression is evenly printing, and during the second impression, in electrode minimum clearance, place leaves groove, the viscosity of controlling printing slurry, obtains as the structure of Fig. 3 (a).After oversintering, then on header board transparent dielectric layer, prepare calcirm-fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 2:
On rear glass sheet with method for printing screen and sintering method prepare A electrode, with the high platform of medium of plate dielectric layer, barrier and sub-pixel center after the preparation of silk screen printing and sintering method, by screen template, control that to make the height of the high platform of medium be 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 4 (a) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (d) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare lithium fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 3:
On rear glass sheet with method for printing screen and sintering method prepare A electrode, with the high platform of medium of plate dielectric layer, barrier and sub-pixel center after the preparation of silk screen printing and sintering method, by screen template, control that to make the height of the high platform of medium be 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 4 (b) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (e) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare hafnium oxide secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 4:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer, the high platform of medium by photosensitive glass legal system for barrier and sub-pixel center, by mask plate, control sensitization and etching number of times, making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 4 (c) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, the first impression is evenly printing, during the second impression, at electrode minimum clearance place, leaves the groove of structure as shown in Figure 3 (b).After oversintering, then on header board transparent dielectric layer, prepare zirconium dioxide secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with each xenon neon mists of 30% of xenon Krypton content of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 5:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer.The high platform of medium by photosensitive glass legal system for barrier and sub-pixel eccentric position, controls sensitization and etching number of times by mask plate, and making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 4 (d) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, the first impression is evenly printing, during the second impression, at electrode minimum clearance place, leaves the groove of structure as shown in Figure 3 (c).After oversintering, then on header board transparent dielectric layer, prepare sodium fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the pure Krypton of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 6:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer.The high platform of medium by photosensitive glass legal system for barrier and sub-pixel center, controls sensitization and etching number of times by mask plate, and making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 4 (e) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (f) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare cerium fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 7:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer.The high platform of medium by photosensitive glass legal system for barrier and sub-pixel eccentric position, controls sensitization and etching number of times by mask plate, and making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 4 (f) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (f) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare strontium fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 70% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 8:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer.The high platform of medium by photosensitive glass legal system for barrier and sub-pixel center, controls sensitization and etching number of times by mask plate, and making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 5 (a) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (f) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare calcirm-fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 55% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 9:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer, the high platform of medium by photosensitive glass legal system for barrier and sub-pixel center, by mask plate, control sensitization and etching number of times, making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 5 (b) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, the first impression is evenly printing, during the second impression, at electrode minimum clearance place, leaves the groove of structure as shown in Figure 3 (b).After oversintering, then on header board transparent dielectric layer, prepare zirconium dioxide secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 10:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer.The high platform of medium by photosensitive glass legal system for barrier and sub-pixel center, controls sensitization and etching number of times by mask plate, and making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 5 (c) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, the first impression is evenly printing, during the second impression, at electrode minimum clearance place, leaves the groove of structure as shown in Figure 3 (c).After oversintering, then on header board transparent dielectric layer, prepare sodium fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the pure Krypton of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 11:
On rear glass sheet with method for printing screen and sintering method prepare A electrode, with the high platform of medium of plate dielectric layer, barrier and sub-pixel eccentric position after the preparation of silk screen printing and sintering method, by screen template, control that to make the height of the high platform of medium be 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 5 (d) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (d) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare lithium fluoride secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 12:
On rear glass sheet with method for printing screen and sintering method prepare A electrode, with the high platform of medium of plate dielectric layer, barrier and sub-pixel center after the preparation of silk screen printing and sintering method, by screen template, control that to make the height of the high platform of medium be 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 5 (e) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (e) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare hafnium oxide secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 13:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer, the high platform of medium by photosensitive glass legal system for barrier and sub-pixel eccentric position, by mask plate, control sensitization and etching number of times, making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.X electrode in header board preparation on glass as shown in Fig. 5 (f) and Y electrode structure, then with method for printing screen, prepare the bus electrode of X electrode and Y electrode.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, the first impression is evenly printing, during the second impression, at electrode minimum clearance place, leaves the groove of structure as shown in Figure 3 (b).After oversintering, then on header board transparent dielectric layer, prepare zirconium dioxide secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 14:
On rear glass sheet with method for printing screen and sintering method prepare A electrode, with plate dielectric layer after the preparation of silk screen printing and the sintering method barrier of structure and the high platform of medium of sub-pixel center as shown in Figure 6, by screen template, control that to make the height of the high platform of medium be 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.At header board preparation on glass X electrode and Y electrode structure as shown in Figure 6, then prepare the X electrode of broken line structure and the bus electrode of Y electrode with method for printing screen.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, leaves the groove of structure as shown in Fig. 3 (e) at electrode minimum clearance place, the degree of depth equals thickness of dielectric layers.After oversintering, then on header board transparent dielectric layer, prepare hafnium oxide secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Embodiment 15:
On rear glass sheet, with method for printing screen and sintering method, prepare A electrode, with silk screen printing and sintering method, prepare rear plate dielectric layer, with photosensitive glass the legal system standby barrier of structure and the high platform of medium of sub-pixel center as shown in Figure 7, by mask plate, control sensitization and etching number of times, making the high platform height of medium is 2/3 of barrier height.With method for printing screen, print three primary colors fluorescent powder, minute three printings.At header board preparation on glass X electrode and Y electrode structure as shown in Figure 7, then prepare the X electrode of broken line structure and the bus electrode of Y electrode with method for printing screen.With method for printing screen, prepare header board transparent dielectric layer, printing at twice, each print thickness is 15 microns, the first impression is evenly printing, during the second impression, at electrode minimum clearance place, leaves the groove of structure as shown in Figure 3 (b).After oversintering, then on header board transparent dielectric layer, prepare zirconium dioxide secondary electron emission layer, thickness is 600 nanometers.With the rear plate processing and header board, through sealing-in, exhaust with after being filled with the xenon neon mist of xenon content 50% of pressure 67000 handkerchiefs, be prepared into complete device.
Claims (8)
1. the plasma display panel (PDP) with high discharging efficiency, by front and rear panels through sealing-in, discharge air, be filled with inert gas and form; Header board comprises front glass sheet (10), is arranged on header board front plate electrodes on glass, covers header board transparent dielectric layer (15) and secondary electron emission layer (16) in front plate electrodes; Front plate electrodes comprises transparent scanning show electrode (11) and the bus electrode (12) thereof that is called as X electrode and transparent show electrode (13) and the bus electrode (14) thereof that is called as Y electrode; Rear plate comprises rear glass sheet (110), be arranged on the addressing electrode that is called as A electrode (111) on rear glass sheet, be arranged on glass sheet surface on A electrode and after covering rear plate dielectric layer (112), be positioned at the barrier (113) on rear plate dielectric layer; On rear plate, by barrier, cut apart and formed primary color sub-pixels, apply primary colours phosphor powder layer (114,115,116) in primary color sub-pixels flute surfaces, each pixel is combined by primary color sub-pixels, and Pixel arrangement forms display line; It is characterized in that, the material that described secondary electron emission layer adopts comprises the fluoride of alkali metal, alkaline-earth metal and rare earth metal, also comprises hafnium oxide and zirconium dioxide; The material adopting with described secondary electron emission layer adapts, press atom number than calculating, in this plasma display panel (PDP), be filled with content that xenon and Krypton be combined and surpass 50% inert gas as working gas, all the other compositions are other inert gas beyond xenon and Krypton; Adapt with described working gas, the groove (17) of an along continuous straight runs is set on the header board transparent dielectric layer of the gap location between X electrode and Y electrode, what the cross section of groove was rectangle, trapezoidal or side is camber line is trapezoidal, the minimum value of gash depth is 1/2nd of header board transparent medium layer thickness, maximum is identical with header board transparent medium layer thickness, and the distance range between two sides of groove and X electrode and Y electrode is 20 microns to 40 microns; In sub-pixel on rear plate, on rear plate dielectric layer outside A electrode, and on the position corresponding with groove on header board transparent dielectric layer, a high platform of medium (117) is set, it is highly not more than 3/4 of barrier height, be not less than 1/2 of barrier height, its shape comprises round platform, cylinder, elliptical table, cylindroid, terrace with edge and prism, and this high platform is identical with barrier material, and adopt same process to prepare, the fluorescent material of the corresponding sub-pixel of its surface coverage simultaneously.
2. the plasma display panel (PDP) with high discharging efficiency according to claim 1, is characterized in that, described alkali metal, alkaline-earth metal and rare earth metal comprise lithium, sodium, potassium, beryllium, magnesium, calcium, strontium, barium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium.
3. according to the plasma display panel (PDP) with high discharging efficiency described in claim 1 and 2, it is characterized in that, in the fluoride of described alkali metal, alkaline-earth metal and rare earth metal, comprise the composition of metal described in one or more.
4. according to the plasma display panel (PDP) with high discharging efficiency described in claim 1 and 2, it is characterized in that, the composition that comprises metal described in one or more in the fluoride of described alkali metal, alkaline-earth metal and rare earth metal also comprises the metal ingredient beyond one or more alkali metal, alkaline-earth metal and rare earth metal simultaneously.
5. the plasma display panel (PDP) with high discharging efficiency according to claim 1, it is characterized in that, between described X electrode and Y electrode, adopt uniform gap and symmetrical structure, described symmetrical structure refers to the both sides up and down that X electrode and Y electrode are symmetricly set on the groove of along continuous straight runs; From above, A electrode is minimum the passing through from the gap between X electrode and Y electrode vertically, and the high platform of described medium is minimum place, the gap between X electrode and Y electrode also; The electrode at minimum place, gap comprises rectangular configuration (421,422), trapezium structure (423,424), outer triangular structure (425,426), interior triangular structure (427,428), outer arcuate structure (429,4210) and arc structure (4211,4212).
6. the plasma display panel (PDP) with high discharging efficiency according to claim 1 is shielded, it is characterized in that, between described X electrode and Y electrode, adopt non-homogeneous gap and unsymmetric structure, described unsymmetric structure refers to X electrode and Y electrode and not take the groove of along continuous straight runs and be symmetrical arranged up and down as symmetry axis; From above, A electrode is minimum the passing through from the gap between X electrode and Y electrode vertically, and the high platform of described medium is minimum place, the gap between X electrode and Y electrode also; The electrode at minimum place, gap comprises rectangular configuration (522), trapezium structure (524), outer triangular structure (526), interior triangular structure (528), outer arcuate structure (5210) and arc structure (5212).
7. the plasma display panel (PDP) with high discharging efficiency according to claim 1 is shielded, it is characterized in that, in described plasma display panel (PDP), primary colours pixel is triangularly arranged, the bus electrode (64) of the bus electrode of X electrode (62) and Y electrode presents broken line structure along tortuous barrier (613), X electrode (61) and Y electrode (63) adopt uniform gap and symmetrical structure, X electrode (61) is arranged on the both sides up and down of its bus electrode (62), and Y electrode (63) is arranged on the both sides up and down of its bus electrode (64); It is symmetry axis that X electrode and Y electrode be take the groove (17) of described along continuous straight runs, is symmetrical arranged up and down, and the high platform of described medium (117) is arranged on the center of sub-pixel, corresponding with the groove of along continuous straight runs on header board.
8. the plasma display panel (PDP) with high discharging efficiency according to claim 1 is shielded, it is characterized in that, in described plasma display panel (PDP), primary colours pixel is triangularly arranged, the bus electrode (64) of the bus electrode of X electrode (62) and Y electrode presents broken line structure along tortuous barrier (613), X electrode (71) and Y electrode (73) adopt non-homogeneous gap and symmetrical structure, X electrode (71) is arranged on the both sides up and down of its bus electrode (62), and Y electrode (73) is arranged on the both sides up and down of its bus electrode (64); It is symmetry axis that X electrode and Y electrode be take the groove (17) of described along continuous straight runs, is symmetrical arranged up and down, and the high platform of described medium (117) is arranged on the center of sub-pixel, corresponding with the groove of along continuous straight runs on header board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210320909.6A CN103681170A (en) | 2012-09-01 | 2012-09-01 | Plasma display screen with high discharging efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210320909.6A CN103681170A (en) | 2012-09-01 | 2012-09-01 | Plasma display screen with high discharging efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103681170A true CN103681170A (en) | 2014-03-26 |
Family
ID=50318397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210320909.6A Pending CN103681170A (en) | 2012-09-01 | 2012-09-01 | Plasma display screen with high discharging efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103681170A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304158A (en) * | 2000-01-12 | 2001-07-18 | 索尼公司 | Alternating current driving type plasma display device |
| JP2006066386A (en) * | 2004-08-28 | 2006-03-09 | Samsung Sdi Co Ltd | Plasma display panel |
| KR20060036450A (en) * | 2003-07-10 | 2006-04-28 | 다우 코닝 코포레이션 | Silicone release coating compositions |
| CN101103430A (en) * | 2005-01-13 | 2008-01-09 | 松下电器产业株式会社 | Plasma display panel and its manufacture method |
-
2012
- 2012-09-01 CN CN201210320909.6A patent/CN103681170A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304158A (en) * | 2000-01-12 | 2001-07-18 | 索尼公司 | Alternating current driving type plasma display device |
| KR20060036450A (en) * | 2003-07-10 | 2006-04-28 | 다우 코닝 코포레이션 | Silicone release coating compositions |
| JP2006066386A (en) * | 2004-08-28 | 2006-03-09 | Samsung Sdi Co Ltd | Plasma display panel |
| CN101103430A (en) * | 2005-01-13 | 2008-01-09 | 松下电器产业株式会社 | Plasma display panel and its manufacture method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100709188B1 (en) | Flat display panel and preparing method of the same | |
| KR20010083185A (en) | Material for converting ultraviolet ray and display device using the same | |
| KR20050019289A (en) | Plasma display panel and manufacturing method thereof | |
| US7878875B2 (en) | Plasma display panel with display electrodes containing glass frit and a method of manufacturing the same | |
| US7932675B2 (en) | Plasma display panel | |
| CN103681170A (en) | Plasma display screen with high discharging efficiency | |
| KR100524777B1 (en) | Manufacturing method for plasma display panel | |
| JP2006139999A (en) | Protecting film for plasma display panel and its forming method as well as plasma display panel | |
| KR100816199B1 (en) | Plasma Display Panel and Method of making the same | |
| JP2010015698A (en) | Plasma display panel | |
| KR20050079005A (en) | Plasma display panel and methode for making thereof | |
| JPH11329254A (en) | Plasma display panel | |
| US7595591B2 (en) | Plasma display panel | |
| JPH07147136A (en) | Protective film for gas discharge panel, its forming method, and gas discharge panel and display device using the protective film for gas discharge panel | |
| US7768205B2 (en) | Plasma display panel and method of manufacturing the same | |
| JP2000173477A (en) | Ac plasma display panel and ac plasma display device | |
| US20120319577A1 (en) | Plasma display panel | |
| JP2013101846A (en) | Plasma display panel manufacturing method | |
| WO2012114691A1 (en) | Plasma-display panel | |
| JP2002358894A (en) | Plasma display panel | |
| JP2011192501A (en) | Plasma display panel | |
| JP2011192429A (en) | Plasma display panel | |
| KR20070108717A (en) | Plasma display panel | |
| JP2012084235A (en) | Plasma display panel and manufacturing method thereof | |
| JP2013093222A (en) | Plasma display panel and deposition material of protection layer thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140326 |